PH20100S N-channel TrenchMOS standard level FETPH20100S N-channel TrenchMOS standard level FET Rev....

PH20100SN-channel TrenchMOS standard level FETRev. 03 — 2 February 2009 Product data sheet

1. Product profile

1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low thermal resistanceLow conduction losses due to low on-state resistance

Simple gate drive required due to low gate charge current

1.3 Applications

DC-to-DC convertors Switched-mode power supplies

1.4 Quick reference data

Table 1. Quick referenceSymbol Parameter Conditions Min Typ Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 100 V

ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 2; see Figure 1

- - 34.3 A

Ptot total power dissipation

Tmb = 25 °C - - 62.5 W

Dynamic characteristicsQGD gate-drain charge VGS = 10 V; ID = 20 A;

VDS = 50 V; Tj = 25 °C;see Figure 11

- 8.9 - nC

Static characteristicsRDSon drain-source

on-state resistanceVGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 8;see Figure 9

- 19 23 mΩ

Nexperia PH20100SN-channel TrenchMOS standard level FET

2. Pinning information

3. Ordering information

4. Limiting values

Table 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol1 S source

SOT669 (LFPAK)

2 S source

3 S source

4 G gate

mb D mounting base; connected to drain

mb

1 2 3 4

S

D

G

mbb076

Table 3. Ordering informationType number Package

Name Description VersionPH20100S LFPAK plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max UnitVDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - 100 V

VGS gate-source voltage -20 20 V

ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 2 - 21.6 A

VGS = 10 V; Tmb = 25 °C; see Figure 2;see Figure 1

- 34.3 A

IDM peak drain current tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 1 - 137 A

Ptot total power dissipation Tmb = 25 °C - 62.5 W

Tstg storage temperature -55 150 °C

Tj junction temperature -55 150 °C

Source-drain diodeIS source current Tmb = 25 °C - 52 A

ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 137 A

Avalanche ruggednessEDS(AL)S non-repetitive

drain-source avalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 12 A; Vsup ≤ 100 V; unclamped; tp = 0.3 ms

- 250 mJ

© Nexperia B.V. 2017. All rights reserved

PH20100S_3

Product data sheet Rev. 03 — 2 February 2009 2 of 12


Fig 1. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Fig 2. Normalized continuous drain current as a function of mounting base temperature

003aaa406

10-1

1

10

102

103

1 10 102 103

VDS (V)

ID(A)

DC

100 ms

10 ms

Limit RDSon = VDS / ID

1 ms

tp = 10 μs 100 μs

Tmb (°C)0 20015050 100

03aa23

40

80

120

Ider(%)

0


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5. Thermal characteristics

Table 5. Thermal characteristicsSymbol Parameter Conditions Min Typ Max UnitRth(j-mb) thermal resistance from

junction to mounting base

see Figure 3 - - 2 K/W

Fig 3. Transient thermal impedance from junction to mounting base as a function of pulse duration

003aaa407

10-2

10-1

1

10

10-5 10-4 10-3 10-2 10-1 1tp (s)

Zth(j-mb)

(K/W)

single pulse

0.2

0.1

0.05

δ = 0.5

0.02

tpT

P

t

tpT

δ =


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6. Characteristics

Table 6. CharacteristicsSymbol Parameter Conditions Min Typ Max UnitStatic characteristicsV(BR)DSS drain-source

breakdown voltageID = 1 mA; VGS = 0 V; Tj = 25 °C 100 - - V

VGS(th) gate-source threshold voltage

ID = 1 mA; VDS = VGS; Tj = 25 °C;see Figure 7

2 3 4 V

ID = 1 mA; VDS = VGS; Tj = 150 °C;see Figure 7

1.2 - - V

IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.06 1 µA

VDS = 100 V; VGS = 0 V; Tj = 150 °C - - 500 µA

IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

RDSon drain-source on-state resistance

VGS = 10 V; ID = 10 A; Tj = 150 °C;see Figure 8; see Figure 9

- 43 53 mΩ

VGS = 10 V; ID = 10 A; Tj = 25 °C;see Figure 8; see Figure 9

- 19 23 mΩ

Dynamic characteristicsQG(tot) total gate charge ID = 20 A; VDS = 50 V; VGS = 10 V;

Tj = 25 °C; see Figure 11- 39 - nC

QGS gate-source charge - 6.9 - nC

QGD gate-drain charge - 8.9 - nC

Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 12

- 2264 - pF

Coss output capacitance - 290 - pF

Crss reverse transfer capacitance

- 111 - pF

td(on) turn-on delay time VDS = 50 V; RL = 5 Ω; VGS = 10 V; RG(ext) = 4.7 Ω; ID = 10 A; Tj = 25 °C

- 23 - ns

tr rise time - 15 - ns

td(off) turn-off delay time - 47 - ns

tf fall time - 9.3 - ns

Source-drain diodeVSD source-drain voltage IS = 10 A; VGS = 0 V; Tj = 25 °C;

see Figure 10- 0.8 1.2 V

trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C

- 110 - ns


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Fig 4. Output characteristics: drain current as a function of drain-source voltage; typical values

Fig 5. Transfer characteristics: drain current as a function of gate-source voltage; typical values

Fig 6. Sub-threshold drain current as a function of gate-source voltage

Fig 7. Gate-source threshold voltage as a function of junction temperature

003aaa408

0

10

20

30

40

0 1 2 3 4VDS (V)

ID(A)

VGS = 5.5 V

4.5 V

5 V

4.8 V

5.2 V

6 V10 V

003aaa409

0

10

20

30

40

2 3 4 5 6VGS (V)

ID(A)

Tj = 150 °C 25 °C

03aa35

VGS (V)0 642

10−4

10−5

10−2

10−3

10−1

ID(A)

10−6

min typ max

Tj (°C)−60 1801200 60

03aa32

2

3

1

4

5

VGS(th)(V)

0

max

typ

min


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Fig 8. Drain-source on-state resistance as a function of drain current; typical values Fig 9. Normalized drain-source on-state resistance

factor as a function of junction temperature

Fig 10. Source current as a function of source-drain voltage; typical values

Fig 11. Gate-source voltage as a function of gate charge; typical values

003aaa410

10

20

30

40

50

60

0 10 20 30 40ID (A)

RDSon

(mΩ)5.2 V

7 V

VGS = 5 V 5.5 V

10 V

6 V

03aa31

0

1

2

3

-60 0 60 120 180Tj (°C)

a

003aaa412

0

10

20

30

40

0.2 0.4 0.6 0.8 1VSD (V)

IS(A)

Tj = 25 °C150 °C

003aaa413

0

2

4

6

8

10

0 10 20 30 40QG (nC)

VGS

(V)


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Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

003aaa411

102

103

104

10-1 1 10 102

VDS (V)

C (pF)

Ciss

Coss

Crss


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7. Package outline

Fig 13. Package outline SOT669 (LFPAK)

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT669 MO-235 04-10-1306-03-16

0 2.5 5 mm

scale

e

E1

b

c2

A2

A2 b cA eUNIT

DIMENSIONS (mm are the original dimensions)

mm 1.100.95

A3A1

0.150.00

1.201.01

0.500.35

b2

4.413.62

b3

2.22.0

b4

0.90.7

0.250.19

c2

0.300.24

4.103.80

6.25.8

H

1.30.8

L2

0.850.40

L

1.30.8

L1

8°0°

w yD(1)

5.04.8

E(1)

3.33.1

E1(1)D1

(1)

max

0.25 4.20 1.27 0.25 0.1

1 2 3 4

mountingbase

D1

c

Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669

E

b2

b3

b4

H D

L2

L1

A

Aw M

C

C

X

1/2 e

y C

θ

θ

(A )3

L

A

A1

detail X

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.


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8. Revision history

Table 7. Revision historyDocument ID Release date Data sheet status Change notice SupersedesPH20100S_3 20090202 Product data sheet - PH20100S_2

Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

PH20100S_2(9397 750 13698)

20040817 Product data sheet - PH20100S_1

PH20100S_1(9397 750 12815)

20040305 Preliminary data sheet - -


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9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.

9.2 DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

9.3 DisclaimersGeneral — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

9.4 TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

10. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: [email protected]

Document status [1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.


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11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .11.1 General description . . . . . . . . . . . . . . . . . . . . . .11.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .11.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .12 Pinning information. . . . . . . . . . . . . . . . . . . . . . .23 Ordering information. . . . . . . . . . . . . . . . . . . . . .24 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .25 Thermal characteristics . . . . . . . . . . . . . . . . . . .46 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .57 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .98 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .109 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 119.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 119.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1110 Contact information. . . . . . . . . . . . . . . . . . . . . . 11

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 02 February 2009

PH20100S N-channel TrenchMOS standard level FETPH20100S N-channel TrenchMOS standard level FET Rev....

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