Performance of Rad-Hard Quad Receivers at …...Characteristics of the input low current Performance...

Q. Kim/NEPP/05/16/01 1

Performance of Rad-Hard QuadReceivers at Extreme Temperatures

Quiesup Kim, Shri G. Agarwal, and Tetsuo F. Miyahira

Jet Propulsion LaboratoryCalifornia Institute of Technology

4800 Oak Grove Dr., Pasadena, CA 91109-8099

Q. Kim/NEPP/05/16/01 2

Purpose

• Characterize the electrical performance andreliabilities as potential space electronic parts underextreme low and high temperature (-125 ~ +150oC)environments extending nominal device specifications(-55 ~ +125oC).

• Identify needed enabling technologies to improveoperation, reliability, and lifetime of future spacemissions such as Mars.

Performance of Rad-Hard Quad Receivers at Extreme Temperatures

Q. Kim/NEPP/05/16/01 3

Presentation outline

• Purpose• Rad-Hard Quad Receivers• Test Method• Results• Conclusions• Recommendations


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Rad-Hard Quad Receiver

• A quad differential line receiver designed for digital data transmission (logicinput buffer) over balanced lines and meets the requirements of RS-422

• Radiation Hardened CMOS processing for low power consumption, highspeed, and reliable operation in the most severe radiation environments.

• Total Dose:100KRAD (Si)• Single Event Upset (SEU)• Single Event Latch-up (SEL)• Thresholds: >100 MeV/mg/cm2

• Supply current at low and high state• Dynamic supply current• Input current at high and low state• Output high and low voltages• Tri-state low and high current• Propagation delays and transition times.


Q. Kim/NEPP/05/16/01 5

Rad-Hard Quad Receivers

• Radiation hardened RS-422line receiver

• Has CMOS enable pin inputlevels and accepts TTL-levelenable signals

• The two circuits are identicalexcept for the configurationof the logic input buffers

• The HS-26C32RH has thesame input characteristics(impedance, hysteresis,failsafe) as commercial types.

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Functional Diagram

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Die Characteristics• Die Dimensions: 2140µµµµm x 3290 µµµµm x 533µµµµm ±±±± 25.4µµµµm• Backside Finish: Silicon• Passivation:

– Type: SiO2»Thickness: 800nm ±±±± 100nm

• Metallization:– M1: Mo/TiW

»Thickness: 580nm– M2: Al/Si/Cu

»Thickness: 1000nm ±±±± 100nm• Substrate Potential: Internally connected to VDD• Worst Case Current Density: < 2.0E5 A/cm2

• Transistor Count: 315• Process: Radiation Hardened CMOS, AVLSI

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Die Layout

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Schematic of the HS-26C(T)32RH inputstructure


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Parasitic Diodes for Each Output

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Adequate input differential voltage for open linefault conditions

• Produces too small an input differential voltage in the open-line fault condition

• The internal input bias network is shunted by the terminationresistor

• The internal input bias network is supplemented externally tocompensate for the termination resistor

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Input Fail/Safe Differential vs Z in (Open)

Q. Kim/NEPP/05/16/01 13

Test Setups


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Characteristics of the quiescent powersupply currents


Supply Current Low State (ICCL) Versus Temperature & Power Supply Voltage

0.000

5.000

10.000

15.000

20.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

ICC

L - (

MA

)

25C-100C-125C

Q. Kim/NEPP/05/16/01 15

Characteristics of the input current


Supply Current High State (ICCH) Versus Temperature & Power Supply Voltage

0.000

5.000

10.000

15.000

20.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

ICC

H -

(MA

)

25C-100C-125C

Q. Kim/NEPP/05/16/01 16

Characteristics of the dynamic supply current


Dynamic Supply Current (ICCDY) Versus Temperature & Power Supply Voltage

0.000

5.000

10.000

15.000

20.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

ICC

DY

- (M

A)

25C-100C-125C

Q. Kim/NEPP/05/16/01 17

Characteristics of the input high current


Input High Current (IIH) Versus Temperature & Power Supply Voltage

0.0000.1000.2000.3000.4000.5000.600

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

IIH -

(MA

)

25C-100C-125C

Q. Kim/NEPP/05/16/01 18

Characteristics of the input low current


Input Low Current (IIL) Versus Temperature & Power Supply Voltage

-0.400

-0.300

-0.200

-0.100

0.0005.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

IIL(m

A) 25C-100C-125C

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Characteristics of the output low voltage


Output Low Voltage (VOL) Versus Temperature & Power Supply Voltage

-40.000

-30.000

-20.000

-10.000

0.0005.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

VOL

- (M

V) 25C-100C-125C

Q. Kim/NEPP/05/16/01 20

Characteristics of the output high voltage


Output High Voltage (VOH) Versus Temperature & Power Supply

0.0001.0002.0003.000

4.0005.0006.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

VOH

- (V

) 25C-100C-125C

Q. Kim/NEPP/05/16/01 21

Characteristics of the tri-state leakagecurrent for output low


Tristate Current with Output Low (IOZL) Versus Temperature & Power Supply Voltage

-5.000

-4.000

-3.000

-2.000

-1.000

0.0005.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

IOZL

- (N

A)

25C-100C-125C

Q. Kim/NEPP/05/16/01 22

Characteristics of the tri-state leakagecurrent for output high


Tristate Current with Output High (IOZH) Versus Temperature & Power Supply Voltage

-1.000

0.000

1.000

2.000

3.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

IOZH

- (N

A)

25C-100C-125C

Q. Kim/NEPP/05/16/01 23

Characteristics of the propagation delay timesfrom high to low state


Propagation Delay High to Low (TPHL) Versus Temperature & Power Supply Voltage

0.00020.00040.00060.00080.000

100.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

TPH

L - (

NS) 25C

-100C-125C

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Characteristics of the propagation delaytimes from low to high state


Propagation Delay Low To High (TPLH) Versus Temperature and Power Supply Voltage

0.00020.00040.00060.00080.000

100.000120.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8V

VCC

TPLH

- (N

S) 25C-100C-125C

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Characteristics of the transition times fromhigh to low state


Transition Time High to Low (TTHL) Versus Temperature & Power Supply Voltage

-0.5000.0000.5001.0001.5002.0002.5003.000

5.5V 5.0V 4.5V 3.6V 3.3V 3.0V 2.8VVCC

TTH

L - (

NS) 25C

-100C-125C

Q. Kim/NEPP/05/16/01 26

Conclusions

• The test results of the basic parameters of aradiation hardened quad receivers at extreme coldenvironment indicates that the device can be appliedfor the potential application in Mars explorationmissions even at -125 oC if the operatingparameters such as power supply voltages chosenproperly.


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Recommendations

• We do not recommend using this part below 3Vsupply voltage in applications requiring operationdown -125°C.

• The output rise and fall times, tTLH and tTHL, were wellwithin the SMD max limits of 12ns at 5V±10% and15ns at 3.3V ± 10%.

• The parts though exhibited anomalous behavior at theconditions of 2.8V supply voltage and lowtemperatures.


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Acknowledgements

The authors are grateful to their numerous colleagues including Jose Uribeof JPL for providing technical support for this study. In particular, theauthors would also like to thank their colleagues at JPL for providingsuggestions for the improvement of this device qualification for potentialspace missions. The authors appreciate the support of NASA HQ.

The study described in this report was carried out by the Center for SpaceMicroelectronics Technology, Jet Propulsion Laboratory, CaliforniaInstitute of Technology, under a contract with the National Aeronauticsand Space Administration. Reference herein to any specific commercialproduct, process, or service by trade name, trademark, manufacturer, orotherwise, does not constitute or imply endorsement by the United StatesGovernment or the Jet Propulsion Laboratory, California Institute ofTechnology.


Performance of Rad-Hard Quad Receivers at …...Characteristics of the input low current Performance...

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