Part 8. Diffraction Intensity
Transcript of Part 8. Diffraction Intensity
Part 8. Diffraction: Intensity(From Chapter 4 of Textbook 2 and Chapter 9 of Textbook 1)
Scattering by an electron: An electron which has been set into oscillation by an X-ray beam is continuously accelerating and decelerating during its motion and therefore emits an EM wave being said to scatter x-rays. The emitted X-ray has the same frequency (wavelength) as the excited X-ray beam i.e. coherent. (the phase change on scattering from an electron is /2) * The intensity of the scattered beam is angular dependent. J.J. Thomson: the intensity I of the beam scattered by a single electron of charge e (C) and mass m (kg), at a distance r (meters) from the electron, is given by
r
P
2
202
22
42
00 sinsin
4 r
KI
rm
eII
0: 410-7 mkgC-2
x
y
zIncident beam wavevector alongx-axis, the electric field lies on theyz plane. Electron at O. Diffractedbeam at P on xz plane, i.e. diffractionplane is xz. Every E can be resolvedinto components Ey and Ez.
O
P
Randompolarized
2r
On average, Ey = Ez, since E is perfectly random.
222zy EEE
00022
2
1
2
1IIIEEE zyzy 2
The y component accelerates the electron in thedirection Oy the intensity of the scattered beam atP is
20 r
KII yPy = yOP = /2
The z component accelerates the electron in thedirection Oz the intensity of the scattered beam atP is
2cos220 r
KII zPz = zOP = /2 -2
The total scattered intensity at P is
2
2cos12cos
2
202
2020
r
KI
r
KI
r
KIIII zyPzPyP
Polarization factorr I ; IIf a monochromator is used with the Bragg angle M the polarization factor for powdered crystalline samplebecomes
M
M
2cos1
2cos2cos12
22
It depends on geometry and sample
condition
Another kind of scattering: Compton scattering;when X-ray encounter loosely bound or free electrons;incoherent scattering, wavelengthchanged, no fixed phase relation;belongs to scattering loss(attenuation). X-ray before impacth1 (1), after Compton scatteringh2 (2). 2
12 sin0486.0)(
h1 e
e
h2
2
Atomic scattering (or form) factor: Consider the physics of coherent scattering by atoms. The atomic scattering factor is the ratio of the scattering from an atom to that from a single bound electron.
electron single aby scattered amplitude
atomby scattered amplitudefactor scattering atomic
Assume that each electron has a spherical charge density(r) around the atomic nucleus and that the X-raywavelength is not too close to the absorption edge.The amplitude scattered to the plane P from a smallvolume of the charge density of oneelectron, dV, is given by (r)dV.s0, s: unit vectors presenting the incident and scattered wave;The path different between thewave scattered at O and at dV isR-(x1 + x2).
O
s0
R
r
x1dV
s
x2
2
srsr Rxx 201 ;
The differential atomic scattering factor is defines by
dVerE
df i
e
)]()[/2( 0)(1 ssr Ee: the magnitude of the wave from
a bound electron
Spherical integration, the integrationelement is dV = 2r2sin d dr
dV
S0
S
S-S0 r
S0
S S-S0
2
Evaluate (S - S0)r = | S - S0||r|cos (S - S0)/2 = sin.
cossin2)( 0 r rSS
dVerE
dff i
e
)]()[/2( 0)(1
)( ssr
r
r
ri
e
drdrerE
dff0 0
2/cossin4 sin2)(1
)(
Let /sin4k
200
22 4|cos2sin2 rrdr
cosd
r
r
kri
e
dedrrrE
f0 0
cos2 cos2)(1
)(
kr
kr
ikr
ee
ikr
e ikrikrikr sin2cos
0cos
cos
r
re
drkr
krrr
Ef
0
2 sin)(4
1)(
For = 0, only k = 0 sinkr/kr = 1.
For n electrons in an atom
electronsn 0
2 sin)(4
1)(
r
re
drkr
krrr
Ef
ZdrrrE
fr
re
electronsn
0
2 )(41
)0( Number of electronsin the atom
equal to 1 boundelectrons
Tabulated
If one consider the absorption of the X-ray, the atomicform factor is expressed as a complex number. Thecalculation above is the real part of the factor. Theimaginary part (absorption) is also tabulated for differentmaterials and X-ray source.
Scattering by a unit cell: Next, we have to consider the diffracted beam from a group of atoms that can make up the crystal. Atoms representing unit cell crystal Diffracted beam from the cell diffracted beam from the crystal Find out the phase difference from a group of atoms representing a unit cell.
(h00)
A
B
C
N M
S R
1 13 3
2 2
a
The path difference between11 and 22 is NCM.
sin2 001122 hdNCM
haACdh / :indicesMillern From 00 The path difference between11 and 33 is SBR.
a
hx
ha
x
AC
ABSBR /1133
the phase difference between 11 and 33 is
a
hx
a
hx 22
1133
If the position of atom B is specified by the fractionalcoordinate (normalized to the magnitude of the basevector), u = x/a.
hua
hx 22
1133
Extending the argument to other two direction, the atomB has actual coordinates x y z or fractional coordinatesx/a y/b z/c (= u v w), respectively. The phase differencebetween the wave scattered by atom B and that scatteredBy atoms A at the origin for the hkl reflection:
)(2 lwkvhu If u v w is integer, no phase difference.
Waves differing in amplitude and phase may also beadded by representing them as vectors.
A1
A2
A3
13
2)2sin( 111 tAE
)2sin( 222 tAE
The analytical expression for a vectorrepresenting a wave A
iiAe 2AI
realAny scattered wave can be expressed inthe complex exponential form:
)(2 lwkvhuii feAe
The resultant wave scattered by all the atoms of the unitcell is called the structure factor (F). F is obtained bysimply adding together all the waves scattered by theindividual atoms. Assume the unit cell contains atoms 1,2, 3, …, N, with fractional coordinates u1v1w1, u2v2w2, …,uNvNwN.
)(2)(22
)(21
222111 NNN lwkvhuiN
lwkvhuilwkvhui efefefF
N
lwkvhuiNhkl
NNNefF1
)(2
F is, in general, a complex number. |F|: amplitude of theresultant wave in terms of the amplitude of the wavescattered by a single electron.
electron single aby scattered amplitude
cellunit a of atoms allby scattered amplitude F
Structure factor calculations:How to choose the groups of atoms to represent a unit cellof a structure? First, determine the number of atoms in theunit cell. Second, choose the representative atoms for acell properly (ranks of equipoints).
Example 1: Simple cubic There are 1 atoms per unit cell, 000 and 100, 010, 001, 110, 101, 011, 111 are all equipoints of rank 1. Choose any one will have the same result.
ffeF lkhihkl )000(2
22fFhkl for all hkl
Example 2: Body centered cubic There are 2 atoms per unit cell, 000 and 100, 010, 001, 110, 101, 011, 111 are all equipoints of rank 1. Another equipoints of rank 1 is ½ ½ ½. Two points to choose are 000 and ½ ½ ½.
)1( )()2
1
2
1
2
1(2)000(2 lkhilkhilkhi
hkl effefeF
fFhkl 2 when h+k+l is even22
4 fFhkl
0hklF when h+k+l is odd 02 hklF
Example 3: Face centered cubic There are 4 atoms per unit cell, 000 and 100, 010, 001, 110, 101, 011, 111 are all equipoints of rank 1. Another equipoints of rank 3 is ½ ½ 0, ½ 0 ½, 0 ½ ½, ½ ½ 1, ½ 1 ½, 1 ½ ½. Four atoms chosen are 000, ½ ½ 0, ½ 0 ½, 0 ½ ½.
]1[ )()()(
)2
1
2
10(2)
2
10
2
1(2)0
2
1
2
1(2)000(2
lhilkikhi
lkhilkhilkhilkhihkl
eeef
fefefefeF
fFhkl 4 when h, k, l is unmixed (all evens or all odds)22
16 fFhkl
0hklF when h, k, l is mixed 02 hklF
Example 4: Diamond Cubic There are 8 atoms per unit cell, 000 and 100, 010, 001, 110, 101, 011, 111 are all equipoints of rank 1.
Another equipoints of rank 3 is ½ ½ 0, ½ 0 ½, 0 ½ ½, ½ ½ 1, ½ 1 ½, 1 ½ ½. The other equipoints of rank 4 is ¼ ¼ ¼, ¾ ¾ ¼, ¾ ¼ ¾, ¼ ¾ ¾. Eight atoms chosen are 000, ½ ½ 0, ½ 0 ½, 0 ½ ½ (the same as FCC), ¼ ¼ ¼, ¾ ¾ ¼, ¾ ¼ ¾, ¼ ¾ ¾.
)4
3
4
3
4
1(2)
4
3
4
1
4
3(2)
4
1
4
3
4
3(2)
4
1
4
1
4
1(2
)2
1
2
10(2)
2
10
2
1(2)0
2
1
2
1(2)000(2
lkhilkhilkhilkhi
lkhilkhilkhilkhihkl
fefefefe
fefefefeF
)4
1
4
1
4
1(2
)2
1
2
10(2)
2
10
2
1(2)0
2
1
2
1(2
1
1
lkhi
lkhilkhilkhi
hkl
e
eeefF
FCC structure factor
Two FCC shifted by ¼ ¼ ¼
)1(4 ifFhkl when h, k, l are all odd22
32 fFhkl fFhkl 8 when h, k, l are all even and h + k + l = 4n
2264 fFhkl
0)11(4 fFhkl when h, k, l are all even and
02 hklFh + k + l 4n
0hklF when h, k, l are mixed 02 hklF
Example 5: Close packed hexagonal cell There are two atoms in a unit cell The eight atoms in the corner are equipoints of rank 1. Choose 000 to represent it. The other point is 1/3 2/3 1/2. (000)
(001)
(100)
(010)
(110)
( 1/3 2/3 1/2)
equipoints
)2
1
3
2
3
1(2
)000(2lkhi
lkhihkl fefeF
Set [h + 2k]/3+ l/2 = g
)1( 2 ighkl efF
gfgfeefF igighkl 2222222
cos4)2cos22()1)(1(
)
23
2(cos4cos4 22222 lkh
fgfFhkl
h + 2k l
3m3m
3m13m1
evenoddevenodd
)
23
2(cos2 lkh 2
hklF
10
0.250.75
4f 2
0f 2
3f 2
Example 6: NaCl (two kinds of atoms), can be considered as 4 Na at 000 FCC structure + 4 Cl at ½ ½ ½ FCC structure
The structure factor:
)2
1
2
1
2
1(2
)2
1
2
10(2)
2
10
2
1(2)0
2
1
2
1(2
1
lkhi
ClNa
lkhilkhilkhi
hkl
eff
eeeF
FCC structure factor
)(0 )( lkhiclNahkl effF when h, k, l mixed 0
2 hklF
)(4 clNahkl ffF when h, k, l all even22
)(16 ClNahkl ffF
)(4 clNahkl ffF when h, k, l all odd22
)(16 ClNahkl ffF
You can also think of the structure as simple FCC and the atom is replaced by a pair of atoms (1 Na + 1 Cl) with the new structure factor
)2
1
2
1
2
1(2 lkhi
ClNa eff
Multiplicity Factor: The following factors discussed are related to the diffraction from polycrystalline sample. The multiplicity factor, p, for hkl planes may be defined as the number of permutations of position and sign of h, k, l. It represents the number of equivalent planes to yield the same diffraction cone. E.g. d100, d010, d001, d-100, d0-10, d00-1 form part of the same diffraction cone for cubic crystal p = 6. If the crystal is tetragonal, d100, d010, d-100, d0-10, form part of the same diffraction cone p = 4; d001, d00-1 p = 2 Lorentz factor: Certain trigonometrical factors, including: Angular distribution of the diffraction (finite spreading of the intensity peak, fraction of crystal contributing to a
2B
Inte
nsit
y
Diffraction Angle 2
Imax
Imax/2
2
IntegratedIntensity
B
diffraction peak, and the intensity spreading in a cone. Integrated intensity: (finite spreading) from constructive interference at Bragg angle to complete destructive interference transition region
B2
1
2 B1
B2
1 2 1 2
A Ba
1 2
path difference for 11-22 = AD – CB = acos2 - acos1
= a[cos(B-) - cos (B+)] = 2asin()sinB ~ 2a sinB.
C D
Na
1N
2Na sinB = completely cancellation (1- N/2, 2- (N/2+1) …)
BNa sin2
Maximum angular range of the peak
Imax 1/sinB, Half maximum B 1/cosB (will be shown later) integrated intensity of the reflection ImaxB (1/sinB)(1/cosB) 1/sin2B.
The second geometrical factor arises from the fact that the integrated intensity depends on the number of crystals orientated at or near the Bragg angle. estimated the fraction of the crystal around the angle. See Fig. 4-16.
crystal plane
rrN B )90sin(2
2
cos
4
)90sin(22
BB
r
rr
N
N
Fraction of crystal:
In accessing relative intensity, one should compare the total diffracted energies in different cone. See, Fig. 4-17. For different cones, the radius of the diffracted energy intersecting the film (Hull/Debye- Scherrer film) is different. Assume the total diffracted energy is equally distributed in the cone (2Rsin2B) the relative intensity per unit length 1/sin2B. Lorentz factor
cossin4
1
2sin
cos
2sin
1cos
2sin
1factor Lorentz
2
2
BBB
B
Lorentz–polarization factor: (omitting constant)
cossin
2cos1factor on polarizati-Lorentz
2
2
Absorption factor: The factor accounts for the X-ray being absorbed during its in and out of the sample. Two geometries are considered. Geometry for Hull/Debye-Scherrer Camera: difficult to calculate, different path different absorption, see Fig. 4-19. In general, the absorption factor is written as A(). A() varies with , qualitatively, A() as . Geometry for Diffractometer:
l
dx
I0
2
A
B
CdID
x
Incident I0, is 1cm2 in cross section, and is incident on the powder plate at an angle . The beam incident on the plate is .
)(0
ABeI
: linear absorption coefficient
Let a: volume fraction of the specimen containing particles having
1cm
the correct orientation for diffraction of the incident beam; b: the fraction of the incident energy which is diffracted by one unit volume. volume = l dx 1cm = ldx. actual diffracted volume = abldx diffracted beam diffracted beam absorbed before escaping from the sample
dxeablI AB)(0
dxeeablI BCAB )()(0
sin;
sin;
sin
1 xBC
xABl
dxeabI
dIx
D
sin
1
sin
1
0
sin
If = = dxeabI
dI xD
sin/20
sin
2sin
2
20
0
sin
20
0
abIxde
abIdII
x
x
xx
x DD
a varies with , being accounted for in the Lorentz factor already. The case discussed is for infinite thickness (defined in the textbook, dID(x = 0)/dID(x = t) = 1000 and = = ). Temperature factor: Also known as Debye Waller factor. Atoms in lattice vibrate (Debye model). Temperature (1) lattice constants 2 ; (2) Intensity of diffracted lines ; (3) Intensity of the background scattering .
d
u
d
u
high B
low B
Lattice vibration is more important at high B (u/d). High B
decrease more! Introducing the temperature factor e-2M.
e-2M
sin /
1
Formally, the factor is included in f as Because F = |f 2| factor e-2M shows up What is M?
Meff 0
2222
2
22 sinsin2
22
BB Bu
d
uM
u
0u
02 u
: Mean square displacement in the direction normalto the diffraction plane, difficult to calculate, Debyehas given the following expression:
2u
2
2
2 sin
4)(
6
Bx
xmk
ThM
h: Plank’s constant; T: absolute temperature; m: mass ofvibrating atom; k: Boltzmann’s constant; : Debyetemperature of the substance; x = /T; (x): tabulatedfunction (appendix 15)
2
4
2
2 1015.16
A
T
mk
ThPut all numbers in and change m to atomic weight (A):
Temperature diffuse scattering: general coherent scattering in all directions by the displacement (u) contributing to the general background of the pattern; as Temperature effect on the diffraction intensity, see Fig. 4-22. The diffraction peak width B slightly as T
Summary of the intensities of diffraction peaks from polycrystalline samples: Hull/Debye-Scherrer Camera:
MeApFI 22
22
)(cossin
2cos1
Diffractometer:
MepFI 22
22
cossin
2cos1
A() independent of .
Effects that make the above intensity equation invalid: (1) Preferred orientation: like films, wire, not true random orientation of the crystal Lorentz factor depends on how the crystals orientated (2) Extinction: for crystals with small sizes (10-4-10-5
cm) kinematical theory: intensity is the sum of all diffraction planes
For large perfect crystal dynamical theory is required; takes into account the multiple reflections between diffracted planes (absorption also increases) Actually to match the intensity calculation with the measured intensity is difficult. But, at least the magnitude (very strong, strong, weak) is qualitatively matched.