Panorama of the Coated Conductor Developments in Europe · 2004. 3. 25. · Panorama of the Coated...
Transcript of Panorama of the Coated Conductor Developments in Europe · 2004. 3. 25. · Panorama of the Coated...
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Panorama of theCoated Conductor
Developments in Europe
Herbert C. FreyhardtUniversität Göttingen & ZFW gGmbH Göttingen
WAMS 2004_CERN_22-24 March 2004
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Field of ApplicationCCCC
Pro
du
cts
& M
arke
t
Products and Market
MotorGenerator
SMES
Cable
Transformer
Current Limiter
MRI
Medical engineering &Life Science
Drive Engineering &Automation
Power- Management
Generation Transportation Distribution of Energy
c&c technologies
Performance of FCL5,5x50 modules based on CC
0-2
0
2
5 time [ms]1 5
4
6
-4
-6
curre
nt[k
A]
4.13 kA3.2 kA
- 3.1 kA
2.8 kA
0.4 ms
non-limited current with50kA amplitude
Max. peak power in 3 modules: > 450 kWMax. voltage for 3 modules: 150 V
2 01 0
NMR+
HTS-CC Products & Market
HTS-CC
Electrical & Power Engineering, Magnet Technology
WAMS 2004_CERN_22-24 March 2004
Magnets+
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Japan targets 2007
• ≈70 $/kAm• 500 m, 5 m/h• Ic=300 A/cm-w
•High performance•High processeing rate•Low production costs
Coated conductors: challengesCoated conductors: challenges
Yu. Shiohara / ISTEC
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RobustProcessingTechnology
High Jceng4 … 7 x 104 A/cm2
@ 77KHigh-Jc Conductors
Assembled Conductors
Availabilityin long lengths
(x 100m)
MechanicalProperties &Compatibility
QualityControl &Standards
Current CarryingCapability
100 … 600 A
Cost=50€/kAm
AC Losses10…25 €/kAm
Below Cu:15…25 €/kAm
CC for Applications in Electrical & Power Engineering
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HTS must be available as
wires, tapes or assembled conductors
HTS conductors
1st generation
Bi-HTS
HTS conductors
2nd generation
YBaCuO Coated Conductors
WAMS 2004_CERN_22-24 March 2004
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What is required for? Jc high @ 77K, moderate magn. fields
@ 4.2K and below, high fields
IrreversibilityField YBCO
BSCCO
D.Larbalestier K.Guth
Grain Boundaries? Weak Links
Highly textured films• sufficient film thickness for high Ic• thermal & mechanical stability …
WAMS 2004_CERN_22-24 March 2004
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Coated Conductors: A Multilayer Architecture
SUBSTRATES •poly: SS, Hastelloy, ... •Thermo-Mech. Treatment: Ni, Ni alloys,...
BUFFER ARCHITECTURES•Diffusion barrier; Thermal Expansion •Adhesion; Interface Reactions•Texture transfer; Epitaxy•Lattice matching; Surface Reconstruction
HIGH TEMP. SUPERCONDUCTOR•Jc(T,B), Jc(e), ac losses
CAP LAYER•Proctective;•Conductive
HTS Coated Conductor
WAMS 2004_CERN_22-24 March 2004
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perovskiterocksaltfcc structurespinelfluoriteC-type REpyrochlore
Material Structure Tm/oC a0 (300K) Lm
MisfitYBCO (%)
Misfit to Ni (%)
Misfit to NiO
(%)Ni fcc 1455 3.52 3.52 -9.38 0.00 -18.47
YSZ cubic / fluorite 2680 5.13 3.63 -6.06 3.03 -14.88
Gd2Zr 2O7 cubic / pyrochlore 10.52 3.72 -3.49 5.38 -12.10Y2O3 cubic / Mn 2O3 >2400 10.6 3.75 -2.67 6.13 -11.20
LaAlO3 rhombohedral / perovskite 2100 5.36 3.79 -1.58 7.12 -10.03
La 2Zr 2O7 cubic / pyrochlore 2300 10.8 3.81 -1.05 7.61 -9.45Gd2O3 cubic / Mn 2O3 >2400 10.81 3.82 -0.79 7.85 -9.16
CaTiO3 orthorhombic / perovskite 5.38x5.44 3.82 -0.79 7.85 -9.16
CeO2 cubic / fluorite 2600 5.41 3.83 -0.52 8.09 -8.88Eu2O3 cubic / Mn 2O3 >2300 10.87 3.84 -0.26 8.33 -8.59
LaNiO3 rhombohedral / perovskite 5.45 3.84 -0.26 8.33 -8.59YBCO orthorhombic 3.83x3.88 3.85 0.00 8.57 -8.31
Ca0.6 Sr 0.4 TiO3 orthorhombic / perovskite 5.46x5.46 3.86 0.26 8.81 -8.03
NdGaO3 orthorhombic / perovskite 1670 5.43x5.5 3.86 0.26 8.81 -8.03
Sm2O3 cubic / Mn 2O3 >2300 10.93 3.86 0.26 8.81 -8.03La 2NiO4 tetragonal 3.86 3.86 0.26 8.81 -8.03
Sr 2RuO4 tetragonal 3.87 3.87 0.52 9.04 -7.75LSMO rhombohedral / perovskite 5.49 3.88 0.77 9.28 -7.47
NdBCO orthorhombic 3.87x3.92 3.89 1.03 9.51 -7.20Pd fcc 1555 3.89 3.89 1.03 9.51 -7.20
Gd2CuO4 tetragonal 3.89 3.89 1.03 9.51 -7.20SrTiO3 cubic / perovskite 2080 3.91 3.91 1.53 9.97 -6.65
LaMnO3 orthorhombic / perovskite 5.54x5.74 3.91 1.53 9.97 -6.65
Nd2O3 cubic / Mn 2O3 >2300 11.08 3.92 1.79 10.20 -6.38
SrRuO 3 orthorhombic / perovskite 5.57x5.54 3.93 2.04 10.43 -6.11
Nd2CuO4 tetragonal 3.94 3.94 2.28 10.66 -5.84
BaTiO3 tetragonal / perovskite 3.99 3.99 3.51 11.78 -4.51Ag fcc 961 4.09 4.09 5.87 13.94 -1.96
SrZrO 3 orthorhombic / perovskite 2800 5.79x5.82 4.10 6.10 14.15 -1.71
BaSnO3 cubic / perovskite 4.12 4.12 6.55 14.56 -1.21NiO cubic / rocksalt 1984 4.17 4.17 7.67 15.59 0.00
BaZrO 3 cubic / perovskite 2690 4.19 4.19 8.11 15.99 0.48MgO cubic / rocksalt 3100 4.21 4.21 8.55 16.39 0.95TiN cubic / rocksalt 4.24 4.24 9.20 16.98 1.65
J.E.EvettsJ.E.Evetts
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Polycrystalline SubstrateTape or Sheet
Biaxially aligned buffer layer:
Ion-Beam-Assisted Deposition: IBADInclined-Substrate Deposition: ISD
YSZ, CeO , CGO, MgO,... 2Protective Coating (Ag, Au, ...)optional “cap layer”:
CeO , Y O2 2 3
Biaxially aligned YBCO film(PLD, Thermal Coevaporation, ...)
Rolling-Assisted-Biaxially-Textured SubstratesNi, NiCr, NiV, ...
Buffer-layer Architecture... CeO, REO, . . .
YSZ, 2 2 3
RE OCeO
2 3
2
YBCO
Forced Texturing
IBAD, ISD
Thermo-mechanical
Texturing of Substrates
(TMT), RABiTS
Coated Conductors: two different routes
WAMS 2004_CERN_22-24 March 2004
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CCA2003 Orta S. Giulio SEP 12-13, 2003
Essential Development Lines
•Ni-Cr SS /IBAD-YSZ/CeO2/PLD-YBCO ZFW, UGoe•Hastelloy/ISD-MgO/homo-MgO/TCE-YBCO or –R.E.BCO Theva•TMT-Ni,Ni-W/TCE-CeO2/TCE-YBCO EDISON,IMEM-CNR,Europa Metalli•development of TMT substrates
-Ni and Ni alloys together with CSD buffers mainly IFW Dresden-Cu based substrates La Farga Lacambra, Univ. Barcelona
•development of -MOCVD for buffer architectures and YBCO deposition on TMT and IBADsubstrates mainly INPG-CSD buffer systems and TFA-YBCO on TMT and IBAD substrates
mainly ICMAB•SOE (Surface Oxidation Epitaxy) of TMT tapes together with MOD and PLD buffers in combination with high-rate hybride LPE UCam
CC Developments in Europe
Nexans,
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Essential CC Developments
Substrates
Buffer
Layer
Architect.
YBCO
R.E.BCO
Polycrystalline SubstratesNi,Cr-based SS, Hastelloy, Inconel
poly Ni
Biaxially Textured S‘s : TMT, RABiTSNi, Ni-W, Ni-Mo, Ni-Cr, Ni-Cr-Al, Ni-V, …
composite tapes Cu-based tapes
Forced Texturing of Buffer LayerIBAD-YSZ; IBAD-ZGO; IBAD-MgO
+ CL or CLs
ISD-MgO/homo-MgO
CeO2, Y2O3,… MOCVD
perovskite-type,… CSD
PLD-YBCO, HoBCO
TCE-YBCO, DyBCO
on SS-IBAD-YSZ
MOCVD-YBCO TFA-YBCO
vac. deposition
non-vac. depos.
YBCO-PLD, YBCO-TCE
YBCO-MOCVD, spray pyrol.
YBCO BaF2-method
YBCO-TFA
LPE; HR hybride LPE
on Ni, Ni-alloys/Ni & Ni, Ni-alloys/SOE-NiO
no SOE-NiO CeO2:TCE,EB; Y2O3/YSZ/CeO2, …
MOCVD: CeO2, YSZ,Y2O3,Gd2O3,LNO
CSD: CeO2; BZO, STO, SZO, LAO, LZO, NCO,...
spray: CeO2
on SOE-NiO: PLD-BZO,-SZO,-CSTO
on SOE-NiO: MOD-BZO,-SZO
WAMS 2004_CERN_22-24 March 2004
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Imaging lensin vacuum chamberQuartz window
±α
Scanning mirror
Target scan
180° target turns
QE-heater
SS tape
TargetBeam-scan
x
Cr-Ni-SS / IBAD -YSZ / PLD -YBCO
IBAD
Ion Beam Assisted Deposition
substrate holder
YSZ target
source 1
sputter
550
source
2IB
ADspace for
transport systems
HR-PLD
1 7 3 7
WAMS 2004_CERN_22-24 March 2004
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IBAD YSZ
YBCO-PLD
High-Jc SS/IBAD-YSZ/PLD-YBCOZFW gGmbH
WAMS 2004_CERN_22-24 March 2004
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TEM & HR-TEM Investgations of the texture development
SS/IBAD-YSZ
1 7 3 7 WAMS 2004_CERN_22-24 March 2004
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Coated Conductors: Long YBCO coated SS tapes
• SS tape (0.1 mm) // IBAD-YSZ (1.5 µm) // CeO2 ( Jc,min = 1.95 MA/cm2 & Ic/w = 214 A/cm (77K, SF)
Nov. 2002
0.05 m contact area
8.0m (between potential contacts) 0.05 m contact area
10.1 m
3.5 ±0.1
- YBCO with Au-shunt
- YBCO without Au-shunt
4-0.
05
1
10
100
1000
10 100current [A]
volt
age
[µV
]
Ic = 75 A
Tape NSS159, L = 10.1 m, wactive= 3.5 mm
A. UsoskinA. IssaevH. C. Freyhardt
WAMS 2004_CERN_22-24 March 2004
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N31906.2
3.72.890.177
125338
1.21338
136
Latest Results 08 2003: 357 A/cm-w (6.1m, 3.5mm, 3.2µm YBCO)
Parameter Unit Sample no.N1148 N1148 N2154 N2159N2161aN2161b
Length, L m 1.9 1.9 9.0 10.3 1.0 0.2
Effect. width, w* mm 9.2 9.2 3.4 3.5 9.5 3.5YBCO thickness µm 1.25 1.25 1.1 1.0 2.4 2.6
Tc K 89.5 89.5 89.5 91.2 90.0 90.0
Temp. of Ic Test K 77 67 77 77 77 77Ic A 142 290 67 78 301 137
Ic/w* A/cm 154 315 197 223 317 391Jc MA/cm2 1.23 2.52 1.79 2.23 1.32 1.51
Je kA/cm2 15.4 31.5 19.7 22.3 31.7 39.1Iquench A 153 - 67 79 310 153
391
10.3
301
2.23Engg.current d.
WAMS 2004_CERN_22-24 March 2004
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CCCC
77 K, SF
0 1 2 30
100
200
300
400
1
2
3
4
Ic/w
film thickness (µm)
criti
cal c
urre
nt d
ensi
ty (
MA
/cm
2 )
Jc
criti
cal c
urre
nt p
er c
m-w
idth
(A
/cm
)
Thickness Dependence of Jc & Ic
WAMS 2004_CERN_22-24 March 2004
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10°
5°
15°
1 2 30
FW
HM
of p
hi-s
cans
for
YB
CO
/CeO
2
YBCO/CeO2 thickness [µm]
FWHM=3.9°
YSZ with FWHM=11°
YSZ with FWHM=17°
CeO2
YBCO
YBCO
A. Issaev, 2003
0
1000
2000
3000
4000
5000
6000
7000
0
1000
2000
3000
4000
5000
6000
7000
Phi - Scale
-40 0 100 200 300
4)
3)
2)
1)
d:\Alexander\nss160.RAW - File: nss160.RAW - Type: Phi-scan - Start: -45.00 ° - End: 315.00 ° - Step: 1.00 ° - Step time: 1. s - Temp.: 25 °C (Room) - Time Started: 1 s - 2-Th
FWHM: 3.93 ° - Obs. Max: 268.45 ° - Gravity C.: 268.42 ° FWHM: 3.87 ° - Obs. Max: 177.39 ° - Gravity C.: 177.50 ° FWHM: 4.07 ° - Obs. Max: 86.50 ° - Gravity C.: 86.72 ° FWHM: 3.72 ° - Obs. Max: -2.77 ° - Gravity C.: -2.93 °
1 7 3 7Coated Conductors: YBCO Texture
WAMS 2004_CERN_22-24 March 2004
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PLD/IBAD(Fujikura/ISTEC)
IBAD-GZO ∆φ ~ 10º
PLD-CeO2 (GZO) ∆φ ~ 5º
PLD-YBCO ∆φ~ 3-4 º
∆φ
(deg
.)
Thickness (µ m)
0
2
4
6
8
10
12
0 0.5 1 1.5
Gd2Zr 2O7
Y2O3
CeO 2
PLD secondary template
IBAD-GZO
SelfSelf--epitaxyepitaxy ofof buffer buffer layerslayers
∆Φ(d
egre
e)
Deposition time ( min.)
IBAD-Gd2Zr2O7240min?10°
Single Crystal Level
Practical Conductor Level( > 1MA/cm2)
PLD-CeO2
PLD-CeO2
1
10
100
0 50 100 150 200 250 300
75min?10°80min?5.6°
IBAD-GZO+PLD-CeO2
WAMS 2004_CERN_22-24 March 2004
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1 7 3 7 Coated ConductorsYBCO coated SS tapes
10m
m
500 mm
6 m / 4 mm 10.3 m / 3.5 mm
2 m / 10 mm
Diam = 50 mm, L = 50 cm
3 YBCO FCL
modules
WAMS 2004_CERN_22-24 March 2004
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1 7 3 7
0
10
20
30
40
50
60
70
80
90
100
3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
Tape sector (each is 22 cm long)
Cri
tica
l Cur
rent
at 7
7 K
[A
]
Ic [A] measuredIc [A] guessIc [A] extrapolationIQue [A]
Tape testing:Best IC measurement result (NSS 170)
IC/width = 234 A/cm
width = 3.5 mm
IC/width = 234 A/cm
width = 3.5 mm
IC = 82 A over 7.7 m
WAMS 2004_CERN_22-24 March 2004
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1,0E-09
1,0E-08
1,0E-07
1,0E-06
1,0E-05
1,0E-04
1,0E-03
1,0E-02
10 100 1000Current [A]
Co
nta
ct V
olt
age
[V]
Ic- criterion 1µV/cm
Ic=82A Ic=106A
Measured at Siemens: n=31
Measured at ZFW: n=35
Measured at Siemens: n=37
Coated Conductors: Long YBCO coated SS tapes
Measurements performed at both Siemens and ZFW
Attractive n values: 31 … 35 @ 77K, sf
WAMS 2004_CERN_22-24 March 2004
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1 7 3 7
Tape Testing:IC Degradation by Mechanical Stress (NSS 158)
0,00
0,20
0,40
0,60
0,80
1,00
1,20
0 100 200 300 400 500 600 700
Axial Stress [MPa]
Deg
rad
atio
n o
f cr
itic
al C
urr
ent
Ic/Ic
0
Tape NSS 158, Ic = 103 A
WAMS 2004_CERN_22-24 March 2004
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Essential CC Developments
Substrates
Buffer
Layer
Architect.
YBCO
R.E.BCO
Polycrystalline SubstratesNi,Cr-based SS, Hastelloy, Inconel
poly Ni
Biaxially Textured S‘s : TMT, RABiTSNi, Ni-W, Ni-Mo, Ni-Cr, Ni-Cr-Al, Ni-V, …
composite tapes Cu-based tapes
Forced Texturing of Buffer LayerIBAD-YSZ; IBAD-ZGO; IBAD-MgO
+ CL or CLs
ISD-MgO/homo-MgO
CeO2, Y2O3,… MOCVD
perovskite-type,… CSD
PLD-YBCO, HoBCO
TCE-YBCO, DyBCO
on SS-IBAD-YSZ
MOCVD-YBCO TFA-YBCO
vac. deposition
non-vac. depos.
YBCO-PLD, YBCO-TCE
YBCO-MOCVD, spray pyrol.
YBCO BaF2-method
YBCO-TFA
LPE; HR hybride LPE
on Ni, Ni-alloys/Ni & Ni, Ni-alloys/SOE-NiO
no SOE-NiO CeO2:TCE,EB; Y2O3/YSZ/CeO2, …
MOCVD: CeO2, YSZ,Y2O3,Gd2O3,LNO
CSD: CeO2; BZO, STO, SZO, LAO, LZO, NCO,...
spray: CeO2
on SOE-NiO: PLD-BZO,-SZO,-CSTO
on SOE-NiO: MOD-BZO,-SZO
WAMS 2004_CERN_22-24 March 2004
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ISD – texturing & DyBCO - evaporation
50 µm Hastelloy
MgO
MgO
DyBCOAu
2500 nm MgO
200 nm MgO
600 nm DyBCO
200 nm Au
CC cross section
THEVA WAMS 2004_CERN_22-24 March 2004
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Reel to reel DyBCO - evaporation
Refillable sources
AAS rate control
Oxygen shuttle
Tape winder
DyBa
Cu
Chamber pressure
7-8·10-5 mbar
Deposition temperature
670°C
THEVA EUCAS 2003 September 14 – 18, 2003 Sorrento
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Latests results(all reel to reel ISD)
• Short samples (5 – 20 cm)
10 m DYBCO tape
• 30 m ISD – MgO buffer deposition (10 mm wide)
• 10 m DyBCO by evaporation
Problems to be solved:
Local defects due to handling problems
jc = 1.6 – 1.9 MA/cm2
Ic = 340 A/cm @ 2.4 µm
• 1m tape samples Ic = 60 – 80 A
THEVA WAMS 2004_CERN_22-24 March 2004
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Essential CC Developments
Substrates
Buffer
Layer
Architect.
YBCO
R.E.BCO
Polycrystalline SubstratesNi,Cr-based SS, Hastelloy, Inconel
poly Ni
Biaxially Textured S‘s : TMT, RABiTSNi, Ni-W, Ni-Mo, Ni-Cr, Ni-Cr-Al, Ni-V, …
composite tapes Cu-based tapes
Forced Texturing of Buffer LayerIBAD-YSZ; IBAD-ZGO; IBAD-MgO
+ CL or CLs
ISD-MgO/homo-MgO
CeO2, Y2O3,… MOCVD
perovskite-type,… CSD
PLD-YBCO, HoBCO
TCE-YBCO, DyBCO
on SS-IBAD-YSZ
MOCVD-YBCO TFA-YBCO
vac. deposition
non-vac. depos.
YBCO-PLD, YBCO-TCE
YBCO-MOCVD, spray pyrol.
YBCO BaF2-method
YBCO-TFA
LPE; HR hybride LPE
on Ni, Ni-alloys/Ni & Ni, Ni-alloys/SOE-NiO
no SOE-NiO CeO2:TCE,EB; Y2O3/YSZ/CeO2, …
MOCVD: CeO2, YSZ,Y2O3,Gd2O3,LNO
CSD: CeO2; BZO, STO, SZO, LAO, LZO, NCO,...
spray: CeO2
on SOE-NiO: PLD-BZO,-SZO,-CSTO
on SOE-NiO: MOD-BZO,-SZO
WAMS 2004_CERN_22-24 March 2004
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Moving Moving tapes: TCEtapes: TCEØ Deposition rate = 3 Å/sec
Ø Simple single-pass systemto investigate deposition undertape movement
CCA 2003, 12CCA 2003, 12--13 Sept., 13 Sept., OrtaOrta San GiulioSan Giulio, Italy, Italy
Sample length = 20 cmYBCO width = 0.7 cmYBCO thickness = 0.6 µm
Ic/w (77 K) = 110 A/cm-width(stationary) 220 A/cm-w
Jc (77K) = 1.8 MA/cm2
-
0,10
1,00
10,00
100,00
0,00 5,00 10,00 15,00
B (T)
Ic/Ic
0@77
K
4.2K
20K
40K
50K
,
JJcc vs vs B at B at low low temperaturetemperature
D. Uglietti, R. FlukigerDépartement de Physique de la Matière Condensée, Université de Genève
B // ab
CCA 2003, 12CCA 2003, 12--13 Sept., 13 Sept., OrtaOrta San GiulioSan Giulio, Italy, Italy
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Essential CC Developments
Substrates
Buffer
Layer
Architect.
YBCO
R.E.BCO
Polycrystalline SubstratesNi,Cr-based SS, Hastelloy, Inconel
poly Ni
Biaxially Textured S‘s : TMT, RABiTSNi, Ni-W, Ni-Mo, Ni-Cr, Ni-Cr-Al, Ni-V, …
composite tapes Cu-based tapes
Forced Texturing of Buffer LayerIBAD-YSZ; IBAD-ZGO; IBAD-MgO
+ CL or CLs
ISD-MgO/homo-MgO
CeO2, Y2O3,… MOCVD
perovskite-type,… CSD
PLD-YBCO, HoBCO
TCE-YBCO, DyBCO
on SS-IBAD-YSZ
MOCVD-YBCO TFA-YBCO
vac. deposition
non-vac. depos.
YBCO-PLD, YBCO-TCE
YBCO-MOCVD, spray pyrol.
YBCO BaF2-method
YBCO-TFA
LPE; HR hybride LPE
on Ni, Ni-alloys/Ni & Ni, Ni-alloys/SOE-NiO
no SOE-NiO CeO2:TCE,EB; Y2O3/YSZ/CeO2, …
MOCVD: CeO2, YSZ,Y2O3,Gd2O3,LNO
CSD: CeO2; BZO, STO, SZO, LAO, LZO, NCO,...
spray: CeO2
on SOE-NiO: PLD-BZO,-SZO,-CSTO
on SOE-NiO: MOD-BZO,-SZO
WAMS 2004_CERN_22-24 March 2004
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TMT / RABiTS METHOD poly Ni alloy/multi buffer/TFA-YBCO
-
0 10 20 30 40 50 60 700.00
0.05
0.10
0.15
0.20 Ni-4.5% W / Ni-15% Cr 40 nm CeO2 by PLD 250 nm Ni e-beam evaporation
freq
uenc
yMisorientation angle (°)
Deviation from cube orientation (°)GBs > 15°
Texture in the Ni-4.5%W/ Ni-15% Cr composite after
recrystallisation
IFW/DD
WAMS 2004_CERN_22-24 March 2004
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TMT tapes : IFW DresdenNi, Ni5W, Ni0.1Mo, Ni13Cr, Ni9V: up to 30m, in-plane FWHM = 8º
Ni4.5W/Ni15Cr composite tapes (yield strength 200 MPa)
RT Yield Strength EBSD maps after 2-step recrystallization
CC Development in Europe
WAMS 2004_CERN_22-24 March 2004
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100 102 104 106
Length (Grains)
NLNl
NlNW
-
Development of C.C. by TFA Processing(SRL-ISTEC)
Improvement of Ic by Thickening YBCO Layer on IBAD by TFA-MOD
Coating
Substrate
TFAPrecursor
O2H2O
CO2HF
Calcination( ~ 400? )
1Substrate
YBCO Film
Ar/O2H2O HF
Firing( 775? )
2Substrate
CeO2 / IBAD-Zr2Gd2O7/ Hastelloy
YBCO Film
210A
77K,0T
0
50
100
150
200
250
300
0 0.5 1 1.5 2Film thickness (µ m)
Ic(A
)
WAMS 2004_CERN_22-24 March 2004
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High Production Rate usingNew Starting Materials (SRL-ISTEC)
0
100
200
300
400
500
600
0 500 1000 1500Time (min)
??
(?
)20 h for TFA
5 MA/cm2on LAO~2h for “X”
5 MA/cm2 on LAOAll TFA Salts
Y(CF3COO)3Ba(CF3COO)2Cu(CF3COO)2
New MaterialsY(CF3COO)3Ba(CF3COO)2
Cu(F-free)X
Reduction of F WAMS 2004_CERN_22-24 March 2004
-
AMSC Results: March 2004WAMS 2004_CERN_22-24 March 2004
Sandwich Architecture
Neutral-axis CC
-
Buffer layers : SS/YSZ// YSZ
èèImprovement of the BL qualityImprovement of the BL quality
FWHM of Rocking Curves:YSZ (200) = 9.6° → 5.5°
FWHM = 13.2° by IBAD
0 100 200 300 400 50010.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
FW
HM
(°)
Thickness of YSZ (nm)
FWHM = 11° by MOCVD
-180 -120 -60 0 60 120 1800
200
400
600
800
1000
1200
1400
Inte
nsi
ty (a
u)
φ (°)
Thickness of YSZ = 150 nm
RMS= 2nm
INPGrenoble
MOCVD
WAMS 2004_CERN_22-24 March 2004
-
SS/YSZ //YSZ/CeO2/YBCO
80 81 82 83 84 85 86 87 88 89 90 91 92 93
0,1
0,2
0,3
0,4
0,5
0,6
0,7
Substrate: SS/YSZ
Layers: YSZ/CeO2/YBCO
YSZ dopé 10% Y
AC
sus
cept
ibili
ty (
a.u)
Temperature (K)
-150 -100 -50 0 50 100 1500
100
200
300
FWMH = 9.1°FWMH = 13.5°
FWMH = 9.5°
I (a.
u)
φ scan YSZ (111) / CeO2 (111) / YBCO (103)
SS/YSZ//YSZ/CeO2/YBCO
ROC YSZ (200) = 4.6°ROC CeO2 (200) = 4.6°ROC YBCO (005) = 2.8°
èèBest Best heterostructureheterostructure
Jc=106A/cm2
INPGrenoble WAMS 2004_CERN_22-24 March 2004
-
NiW/NiO//CeO2/YSZ/CeO2/YBCO
78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93
0,2
0,3
0,4
0,5
0,6
0,7
Substrate: NiD1W/NiO Layers : CeO2/YSZ/CeO2/YBCO
YSZ doped 10% YAC
sus
cept
ibili
ty (
a.u)
Temperature (K)
-150 -100 -50 0 50 100 1500
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
FWMH = 10.2°
FWMH = 11°FWMH = 10.7°
I (a.
u)
φ scan CeO2 (111) / YSZ (111) / YBCO (103)
NiW/NiO/CeO2/YSZ/CeO
2/YBCO
FWHM of Rocking Curves:CeO2 (200) =9.1°YSZ (200) = 10.2°YBCO (006)= 8.5°
Jc = 5.10 5 A/cm2
èèBest Best heterostructureheterostructureProject
INPGrenoble WAMS 2004_CERN_22-24 March 2004
-
All sol-gel coated conductor
Technical substrates
YBCOBuffer layers
Protective layer
MOD
Buffer layers:Compatibility with metallic substrates (RABiT and IBAD)Grain size, thickness and roughness can be modified by processing
Fluorite : CeO2
Perovskite :BaZrO3, SrTiO3, LaAlO30 50 100 150 200 250 300 350In
tens
ity(A
rbitr
ary
Uni
ts)
(º)φ
∆φ=0.3º
Precursors: pentadionate, isopropoxide, acetate, sec-butoxide, ethylhexanoate
IBAD-YSZ : UGOT
RABiT Ni: IFW
Ni/NiO: UCAM
ICMAB WAMS 2004_CERN_22-24 March 2004
-
PerovskitePerovskite
FluoriteFluoriteCeOCeO22
PerovskitePerovskiteSrTiOSrTiO33
PerovskitePerovskiteSrTiOSrTiO3 3 : : NbNb
NiO-SOE/Ni RABiT YSZ-IBAD/SSMgO-IBAD/SS
With templates
Ni (Cu) RABiT
Non protected
Metallic substrates
PyrochlorePyrochloreLaLa22ZrZr22OO77
YBCOYBCO
PerovskitePerovskite(Ba,Ca)TiO(Ba,Ca)TiO33BaZrOBaZrO33
AllAll CSD tapes CSD tapes architecturesarchitectures
ICMAB
-
CSD of oxide buffer layersCSD of oxide buffer layers
2,4-X- Pentadionate
X=Ce, Zr
O
O
CH3
CH3
CH
z
X z+
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.70
20
40
60
80
100
Profilometry
Reflectometry
BaZrO3
CeO2
SrTiO3
CaZrO3
LaAlO3
CaTiO3
Thi
ckne
ss(n
m)
Concentration (M)
Thickness control through solutionconcentration and viscosity
Solvents :acetic acid, methanol,
methoxyethoxy
Soluble metallorganic chemicalprecursors Acetates
OCH3
O
2M
2+
M=Ba, Sr, Ca
Al, Ti, La isopropoxydes
Heterometallic alkoxydes : Sr-Ti, Ba-Zr
ICMAB
-
Non-reactive buffers matched with similar texture than the NiO template layer. Roughness must be improved
Collaboration with Univ. Cambridge and Dresden
SrTiO3/BaZrO3 on NiO/NiNiO grown by Surface Oxidation Epitaxy
BZOSTO
001001
NiONi
ε= 0.4%
-6.95%
rms ~ 45-100 nm
STO (850STO (850ººC)C)
ICMAB
-
YBCO : Trifluoroacetates routeCu(TFA)2 + Ba(TFA)2 + Y(TFA)3 → CuO + BaF2 + Y2O3 + (CF3CO)2O + CO2 + CO + H2O
2 BaF2 + 2 CuO + 1/2 Y2Cu2O5 +2 H2O YBa2Cu3O6.5 + 4 HF
Pyrolysis: T≈300ºC
Reaction: T≈700-800ºC
YBCO
Substrate
Growth
BaF2 Y2Cu2O5 CuO
H2O
H2O HF
HF
YBCO
Substrate
Growth
BaF2 Y2Cu2O5 CuO
H2O
H2O HF
HF Growth ? HF removalP(H20)PtotalTreactionGas flow
0.04 0.04 nmnm/s < G < 2 /s < G < 2 nmnm/s/sWAMS 2004_CERN_22-24 March 2004
-
High quality YBCO thin films
0 20 40 60 80 100105
106
107
108
250 nm
500 nm
J c
(A/c
m2 )
T (K)
T = 77 K
Jc= 3.3 MA/cm2
Jc= 1.0 MA/cm2
•Nucleation and growth rate can be controlled
•Multideposition can be performed
•Thickness dependence is still an issue
No porosity0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
45
134
224,
25
315
FWHM = 1,40 ºOS-35 YBCO + STO 816ºC Reflection 115
Inte
nsity
(A
.U.)
φ (Degrees)
∆φ=0.6º
18,5 19,0 19,5 20,0 20,5
∆ω = 0.4º
Inte
nsi
ty (
Arb
itrar
y U
nits
)
ω(º)
ICMABWAMS 2004_CERN_22-24 March 2004
-
n If CeO2CSD surface has been treated¨Excellent YBCO superconducting
properties••Metallic Metallic ρρ(T(T))••TTcc = 90 K= 90 K
••JJcc (5K) (5K) = 1.5 x 10= 1.5 x 1077 A/cmA/cm22
••JJcc (77K) = 1.6 x 10(77K) = 1.6 x 1066 A/cmA/cm22
••cc--axis fraction ~ 0.9axis fraction ~ 0.9
0 100 200 3000
200
400
ρ (µ
Ω c
m)
T (K)
CeOCeO22YBCOYBCO
YSZ
0 20 40 60 80 100
105
106
107
J c(A
/cm
2 )
T(K)
Model system – All fluoriteYBCO/CeO2CSD/YSZ
YBCO on CeO2PLD/YSZ-SS tapes
Jc (5K) = 1.4x106 A/cm2
ICMAB
-
Long length CSD superconducting tapesLong length CSD superconducting tapes
Batch furnace system for 35m CC tape with control of Ptot
•European project “Novel Sol Gel Technology For Long Length Superconducting Coated Tapes”(SOLSULET)
-
0
50
100
150
200
250
300
0,1 1 10 100
CC tape length (m)
Cri
tica
lcu
rren
tper
cm
-wid
th(A
/cm
)
PLD (LANL)
MOCVD (IGC)
BaF2 (3M)
PLD (IGC)
PLD (Sumitomo)
MOD TFA (AMSC/ORNL)
PLD (Fujikura)
392 A/cm in 0.2m length (ZFW)
HR
-PL
D (
ZF
W G
ött
ing
en)
HR-PLD new route (ZFW )
350
400357 A/cm in 6m length (ZFW)
RABiTSIBADISD
RABiTSIBADISD
PLD (Fujikura)
?July 2003
2002
2001-2002
MgO/PLD (LANL)
MOCVD (IGC)
PLD (IGC)
38A Fujikura
ZFW: 481A/cm-w
1 7 3 7
AMSC
TFAISTEC
&AMSC
March 2004
AMSCFeb 04
(IGC)March 04
-
SuperconductingSuperconducting performanceperformance VacuumVacuum vsvs
chemicalchemical depositiondeposition
0.0 0.5 1.0 1.5 2.0 2.5 3.0
1x106
2x106
3x106
4x106
5x106
PLD-Göttingen IBAD-YSZ 7º-4º
PLD-LANL IBAD-MgO 4º
BaF2-ORNL RABiT-6º
TFA-AMSC RABiT 4.6º
TFA-ISTEC IBAD-5º
TFA-AMSC RABiT 6.4º
J c (
A/c
m2 )
t (µm)
Commercial performance
Ic ˜ 300-400 A/cm-w
WAMS 2004_CERN_22-24 March 2004
-
10 7
10 8
10 9
10 10
10 11
0 5 10 15 20 25 30
J c[A
/m2 ]
Magnetic Field, B [T]
50K77.3K30K
50K77.3K
30K
20K
20K(Measure)
core Jc
(@4.2K, Bronze-Processed)
non-Cu Jc
(@4.2K, Bronze-Processed)
4.2K
YBCO(IBAD-PLD)Bi2223(Ag-Sheath)Nb3Sn
Jc-B Properties in IBAD-PLD Tape(Fujikura Ltd. & Kyushu Univ.)
EHTS/ZFWNo failure @ 4.2K
20T: 485 A (4mm tape)
-
A.Usoskin\2003\SUITABLE\FCL&Limitation.ppt
FCL-modules based on YBCO coated SS tapes CCCC∅ 55 mm
500 mm
Performance of FCL5,5x50 modules based on CC
0
-2
0
2
5 time [ms]15
4
6
-4
-6
curr
ent
[kA
]
4.13 kA3.2 kA
- 3.1 kA
2.8 kA
0.4 ms
non-limited current with50kA amplitude
Max. peak power in 3 modules: > 450 kWMax. voltage for 3 modules: 150 V
2010
Nominal (non-limited) current 2 500 A (ampl.)
Nominal power losses ~ 0.5 W
Fault current, max. 50 000 A (ampl.)
Peak power at fault current: 150 000 W
SUPERPOLI
-
REQUIREMENTS & STRATEGIC GOALSReproducible Processing of YBCO-CC , S.E.BCO-
CC
? YBCO CC in lengths of 100 m Jceng 400-700A/mm2 @ 77K
•with cross-sectional architectures and properties (Ic (T,B,e,…), ac losses, mechanical & electro-mechanical prop. , ease of handling; … ) determinedby the particular application
•assembled conductors
? YBCO CC in km lengths (for use at 77K) until 2005/6 at costs of < 50 €/kAm
? Mass production in 2010/2012 at costs 10 ... 25 €/kAmWAMS 2004_CERN_22-24 March 2004
-
Jc : 1 MA/cm2
dYBCO : 1µm
Ic : 100A/cm-w
Ic : 300A/cm-w Ic : 600A/cm-w
Jc : 3 MA/cm2
dYBCO : 1µm
Jc : 1 MA/cm2
dYBCO : 3µm
Jc : 3 MA/cm2
dYBCO : 2µm
CC Tape
How to increase Ic ?