P0603BDG
5
1 APR-03-2006 N-Channel Logic Level Enhancement Mode Field Effect Transistor P0603BDG TO-252 (DPAK) Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V T C = 25 °C 75 Continuous Drain Current T C = 100 °C I D 50 Pulsed Drain Current 1 I DM 170 Avalanche Current I AS 40 A Avalanche Energy L = 0.1mH E AS 140 Repetitive Avalanche Energy 2 L = 0.05mH E AR 5.6 mJ T C = 25 °C 60 Power Dissipation T C = 100 °C P D 32.75 W Operating Junction & Storage Temperature Range T j , T stg -55 to 150 Lead Temperature ( 1 / 16 ” from case for 10 sec.) T L 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θJC 2.3 Junction-to-Ambient R θJA 62.5 Case-to-Heatsink R θCS 0.6 °C / W 1 Pulse width limited by maximum junction temperature. 2 Duty cycle ≤ 1％ ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250µA 30 Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250µA 1 1.5 3 V Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V ±100 nA V DS = 24V, V GS = 0V 1 Zero Gate Voltage Drain Current I DSS V DS = 20V, V GS = 0V, T J = 125 °C 25 µA 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 30 6.5mΩ 75A G D S
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Transcript of P0603BDG
1 APR-03-2006
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P0603BDGTO-252 (DPAK)
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TC = 25 °C 75 Continuous Drain Current
TC = 100 °C ID
50
Pulsed Drain Current1 IDM 170
Avalanche Current IAS 40
A
Avalanche Energy L = 0.1mH EAS 140
Repetitive Avalanche Energy2 L = 0.05mH EAR 5.6 mJ
TC = 25 °C 60 Power Dissipation
TC = 100 °C PD
32.75 W
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150
Lead Temperature (1/16” from case for 10 sec.) TL 275 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RθJC 2.3
Junction-to-Ambient RθJA 62.5
Case-to-Heatsink RθCS 0.6
°C / W
1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1％ ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 30
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.5 3 V
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = 24V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS
VDS = 20V, VGS = 0V, TJ = 125 °C 25 µA
1. GATE 2. DRAIN 3. SOURCE
PRODUCT SUMMARY V(BR)DSS RDS(ON) ID
30 6.5mΩ 75A G
D
S
2 APR-03-2006
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P0603BDGTO-252 (DPAK)
Lead-Free
NIKO-SEM
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 70 A
VGS = 10V, ID = 30A 5.3 6.5 Drain-Source On-State Resistance1 RDS(ON)
VGS = 5V, ID = 24A 7.6 9.5 mΩ
Forward Transconductance1 gfs VDS = 15V, ID = 30A 19 S
DYNAMIC
Input Capacitance Ciss 2679
Output Capacitance Coss 1040
Reverse Transfer Capacitance Crss
VGS = 0V, VDS = 15V, f = 1MHz
280
pF
Total Gate Charge2 Qg 28
Gate-Source Charge2 Qgs 10
Gate-Drain Charge2 Qgd
VDS = 15V, VGS = 10V,
ID = 25A 15
nC
Turn-On Delay Time2 td(on) 11
Rise Time2 tr VDS = 15V, 9
Turn-Off Delay Time2 td(off) ID ≅ 30A, VGS = 10V, RGS = 2.7Ω 32
Fall Time2 tf 6
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current IS 75
Pulsed Current3 ISM 170A
Forward Voltage1 VSD IF = IS, VGS = 0V 1.3 V
Reverse Recovery Time trr 20 nS
Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / µS 200 A
Reverse Recovery Charge Qrr 8 nC1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P0603BDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.
3 APR-03-2006
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P0603BDGTO-252 (DPAK)
Lead-Free
NIKO-SEM
TYPICAL CHARACTERISTICS
T = 125°C
-55°C
25°C
BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE
V = 0V
I ,R
EV
ER
SE
DR
AIN
CU
RR
EN
T( A
)
60
10
0.1
1
0.01
0.001
0.00011.21.0 1.40.60.40.20 0.8
SDV ,BODY DIODE FORWARD VOLTAGE( V )
A
GS
S
4 APR-03-2006
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P0603BDGTO-252 (DPAK)
Lead-Free
NIKO-SEM
C a p a c ita n c e C h a ra c te r is t ic s
V G S= 0 V
V D S -D ra in - to -S o u rc e V o la g e (V )
C-C
apac
itanc
e (p
F)0 5 1 0 1 5 2 0 2 5 3 0
1 0 2
1 0 3
1 0 4
C rs s
C o s s
C is s
f = 1 M H z
0 1 0 2 0 3 00
2
4
6
8
1 0
1 2
Q g ,G a te C h a rg e (n C )
VG
S ,G
ate-
Sour
ce V
olta
ge (V
)
I D = 2 5 A
V D S = 5 V1 0 V
1 5 V
G a te C h a rg e C h a ra c te r is t ic s
5 APR-03-2006
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P0603BDGTO-252 (DPAK)
Lead-Free
NIKO-SEM
TO-252 (DPAK) MECHANICAL DATA
mm mm Dimension
Min. Typ. Max. Dimension
Min. Typ. Max.
A 9.35 10.4 H 0.89 2.03
B 2.2 2.4 I 6.4 6.6
C 0.45 0.6 J 5.2 5.5
D 0.89 1.5 K 0.6 1
E 0.45 0.69 L 0.5 0.9
F 0.03 0.23 M 4.4 4.6
G 5.2 6.2 N
G
A
H
JIB
C
M
L
K
DE
F1
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