OUTLOOK ON WAFER SURFACE SCIENCE & ENGINEERING … · 2019-07-05 · | 2 WAFER SURFACE SCIENCE &...

Prototyping Pilot Line Workshop | Véronique CARRON, Head of SURF Department | 28/06/2019

OUTLOOK ON WAFER SURFACE SCIENCE & ENGINEERING CAPABILITIES

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WAFER SURFACE SCIENCE & ENGINEERING DEPARTMENT : ID CARD

120 people dedicated to wafer surface treatment Technicians Engineers

Experts on 7 areas of competences : bonding, wet processes, TTH,

implantation, CMP, grinding & epitaxy 10 PhD students

>150 tools from <200m to 300mm Industrial grade 200/300mm toolset

<200mm capabilities

24/7 operations

3 types of activities Basic operations / mature processes Speed, efficiency Engineering / process tuning & integration for on going LETI programs

Long term R&D in collaboration with academics, tool suppliers

IP & Communication > 20 patents / year

Contribution to 100 publications in 2018

1st Leti Prototyping Pilot Line workshop | V. Carron | 28 June 2019

Our goal is to support and

anticipate new applications and

products through the development

of new unit processes, materials

and equipment technologies

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OUR 7 AREAS OF EXPERTISE

WET• Contamination control & cleaning

• Surface preparation

• Wet etching

TTH• Annealing and oxidation atmospheric or low

pressure furnace and RTP• UV Nanosecond Laser Annealing

• High temperature deposition

Poly-Si, a-Si, Si3N4, Low stress SiN, Si Dots

CMP• Front End Applications

SiO2, Si, SiN etc.. Polishing

• Back-End Applications

Cu, W, GST, magnetic materials etc…

Grinding• Dry Polishing (200 / 300mm)

• Edge trimming and dicing (200 / 300mm)

• Grinding : Si, Ge, GaAs, InP, GaN, sapphire, polymer, metal, glass…

Epitaxy (Group IV)• SiGeC RP-CVD : intrinsic or in-situ doped Si/SiGeC

heterostructures for nanoelectronics & optoelectronics

Implantation• All species implant for doping, Smart CutTM and

material modification applications : • Plasma Immersion & ion implantation

• Temperature controlled Implant

Bonding• Si/SiO2, Metal/Metal etc.. Direct Bonding• Thermocompression / Eutetic and Anodic bonding

• Polymer bonding / Temporary bonding

• WTW or DTW bonding

More Than Moore

Substrate

Power

RF

Lighting3DPhotonic

ImagerSensors

More Moore

FDSOI & Quantum

Display

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UNIT PROCESS EXPERTISE: GROUP IV EPITAXY

• Investigated materials in 200 & 300mm

• Column IV epitaxy of undoped/in situ doped: Si,

Ge, Si-Ge, SiGe:C, Ge-Sn, strained or relaxed…

• Blanket or localized & selective epitaxy

• In situ surface preparation (Siconi)

• Low temperature epitaxy (≤500°C) with

• Large panel of applications

• Selected tool Set

Si(001) substrate145 nm BOX

Si(001) substrate

SiGe

Si

SiGe

Si

100 nm100 nm

19 periods Si/Si0.8Ge0.2

superlattice on bulk and SOI

Si(001) substrate145 nm BOX

Si(001) substrate

SiGe

Si

SiGe

Si

100 nm100 nm

19 periods Si/Si0.8Ge0.2

superlattice on bulk and SOI

19 periods Si/SiGe

super-lattice on Si

SiGe RSD for CMOS Nanowire


Epsilon 3200A 300mmCENT5200 200mm CENT300 300mm

Ge

Si sub.

GeSn µ-disk

GeSn/Ge based

lasers

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• Furnace & RTP

• Anneal and oxidation @ atmospheric or low pressure

• High temperature deposition: Poly-Si, a-Si, Si3N4, Low stress

SiN, Si Dots

• Ge condensation module

• SiGe up to 70% Ge

• Nano second laser annealing module with

• UV 308nm – 80-180ns laser

• From process to simulation of laser/structures interactions

• Selected tool Set

UNIT PROCESS EXPERTISE: THERMAL TREATMENT

2 Levitech RTP LEVITOR

tools in 200 & 300mm

HELLER 200/300mm

Microbumps reflow for 3D ICLT-3100 platform

300mm UV-NLA

Ge condensation on

SiGe nanodots

Yann Almadoriet al J. Phys. Chem. C 2016

Impact of laser anneal on a-Si crystallization

S Kerdiles et al. IWJT 2016

P. Acosta-Alba et al. SSDM 2019

VT412 200/300mm

Oxidation & Annealing


| 61st Leti Prototyping Pilot Line workshop | V. Carron | 28 June 2019

FOCUS : « COLD » PROCESSES FOR 3D MONOLITHIC INTEGRATION : COOLCUBETM

Low Temperature Epitaxy for top device

Surface Annealing with UV-NLA

< 400°C

UV pulse

Absorption in Si

Limited

heat

diffusion

For more details

S. Kerdiles / JM Hartmann presentation in this WorkShop

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• Direct bonding, a historic collaboration with

• From basics mechanisms to applications

• From Si to metals through III-V

• Metallic bonding

• Direct vs eutectic vs thermo-compression bonding

• Polymer bonding

• Temporary bonding

• Flexible substrate bonding

• Chip to wafer bonding

• Pick & place, collective bonding, self alignment

• Selected tool set

UNIT PROCESS EXPERTISE : BONDINGBonding defects and water diffusion after Si/Si

direct bonding

4h 72h 260h

M. Tedjini et al. APL 2016Al Ge

Si

Bonding

interface

SiO2

SiO2

AlGe eutectic bonding

V. Lumineau et al, ECS trans. 2016

FC1 for die bonding with

precision

Gemini 200/300mm

WtW high precision bonding580CB 200mm

WtW covalent bondingEVG 560&850DB 200/300mm

Debonding tool

20nm thick Si transfer on polymer

P. Montmeat et al. MAM 2017

Collective III-V dies bonding


| 81st Leti Prototyping Pilot Line workshop | V. Carron | 28 June 2019

FOCUS : 3D STACKING ET HYBRID BONDING FOR 3D IC

Bondinginterface

Coupling betweenCMP – Bonding -

Métrology

Wafer to WaferBonder EVG GEMINI

Chip to WaferPick & Place SET FC1

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UNIT PROCESS EXPERTISE : BONDING

Wafer Bonding

With Intermediate layer

Insulating layer

Polymerbonding

Glass frit bonding

Direct bonding

Mixed surface

Direct bonding

Conductive layer

Polymerbonding

Euteticbonding

Thermo-compres

sion

Direct bonding

No intermediatelayer

Anodicbonding

Direct bonding

Almost all wafer bonding technologies are being addressed at Leti


For more details see other presentations of this worshop

F. Fournel for LETI expertise on bonding technologies T. Wernicke for EVG vision on recent trends in Wafer Bonding Technology Y. Lamy (LETI) & V. Renault (SOITEC) for Substrate Innovation Center

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UNIT PROCESS EXPERTISE: IMPLANTATION & FRACTURE

• Beamline implantation:

• Three beamlines systems 200 & 300mm

• From 0,2 ke.V to 250 ke.V

• Standard & exotic species available

• Si & III-N doping expertise (experiments & modeling)

• Plasma doping for 2D & 3D structures

• 200-300mm Pulsion®

• Large Smart CutTM expertise with

• Transfer thin crystalline layers onto a foreign substrate

• From basic physics studies with to technology

And possibility

to implant

others species

on demand…

Φ 300mmSi fracture post H2

implantation

Nanoplatets

µcracks Full

wafer

D. Massy et al. PRL 2018


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• Planarization technology as an enabler for all Leti applis

• Heterogeneous integration (3D, LED, hybrid bonding…)

• Advanced CMOS (Gate last, SAC, STI, CoolcubeTM, BEOL, W…)

• Advanced materials (III-V, perovskites…)

• Substrate fabrication

• From coupon samples to 300 mm wafers

• Consumable benchmark and development with suppliers

• Last CMP 300mm tool generation

• Advanced CMP options (End-point / RTPC / Clean / Uniformity control…)

• Multiscale wafer and consumable characterization (Interferometry, AFM,

confocal microscope..)

• JDP with

UNIT PROCESS EXPERTISE : CHEMICAL MECHANICAL POLISHING (CMP)

Within die topography optimization trough

process and design rules (Interferometry)

Ebara F-REX300 300mmUniformity control @ wafer scale : 2nm on 300mm

LK Prime 300mm

Reflexion 300mm 1st Leti Prototyping Pilot Line workshop | V. Carron | 28 June 2019

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• Process :

• New material grinding : Si, Ge, GaAs, InP, GaN, sapphire,

polymère, metal, glass…

• From samples up to 300 mm

• Consumables test (wheels, resists, …)

• Equipements :

• 1 Disco full auto 200/300 grinding with dry polishing

• 1 Disco Edge trimming & dicing full auto 200 mm / 300 mm

• 2 Disco 200/300 mm

• 2 Okamoto : from samples up to 200 mm

UNIT PROCESS : WAFER THINNING AND DICING

Grinding

on glass

Grinding

on cavities

Grinding on

temporary

substrate


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• Surface preparation, cleaning & Selective etching

• For all Si technologies

• On Ge, III-V and III-N materials

• For packaging & 3D integration

• From manual wet benches to advanced 300mm tools

• Contamination Management

• Backside & bevel cleaning

• Classical contaminant & noble metals

• Particles removal

• Selected tool set

UNIT PROCESS EXPERTISE : WET PROCESSES

Immersion batch

Akrion 200mmSSEC 3301

300mm

SnAg (Ni)

10µm

Cu/Ni/Au

5µm

Selective

etching for

µbump

SiGe selective etch for SiGeOI substrate

J. Widiez et al. ECS trans 2016

Low Ge% SiGe Si0,3Ge0,7

AsGa passivation

mechanisms in H2O2

M. Rebaud et al. UCPSS 2016


SEZ SP203

200mm

SU3100

300mm

Surface preparation for epi. Regrowth on SiGe

PE Reynal, SPCC 2018

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OUR COLLABORATION OFFER

Mature Processes& Technologies

Wafer service thruLETI 3S (SiliconSpecialitiesSolutions)

IP licensing

TechnologyTransfer

New products & applications

Collaboration thruLETI’s SiliconProduct Divisions (DCOS, DOPT, DTBS)

New Materials & Process

Development

Collaborative bilateral researchon specific project

Common laboratories

Affiliation program

New Equipement Engineering

Specific Joint DevelopmentProgram

A full range of business models to meet our partner’s needs

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CONCLUSION

1st Leti Prototyping Pilot Line workshop | Author | 28 June 2019

o A State of the Art 100-200-300mm tool set & technologies in Surface Science & Engineering Processes

o Strong expertise in

• Epitaxy

• Implantation

• Thermal treatment

• Bonding

• CMP

• Grinding / Dicing

• Wet Processes & contamination management

o At the heart of the SOITEC-CEA « Substrate Innovation Center »

o Access to

• Specific process realization & developments for your needs

• Collaborations on new tool capabilities

• Consumable tests for Wet, CMP, Polymer Bonding, Grinding…

OUTLOOK ON WAFER SURFACE SCIENCE & ENGINEERING … · 2019-07-05 · | 2 WAFER SURFACE SCIENCE &...

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Transcript of OUTLOOK ON WAFER SURFACE SCIENCE & ENGINEERING … · 2019-07-05 · | 2 WAFER SURFACE SCIENCE &...