OUTLOOK ON WAFER SURFACE SCIENCE & ENGINEERING … · 2019-07-05 · | 2 WAFER SURFACE SCIENCE &...
Transcript of OUTLOOK ON WAFER SURFACE SCIENCE & ENGINEERING … · 2019-07-05 · | 2 WAFER SURFACE SCIENCE &...
Prototyping Pilot Line Workshop | Véronique CARRON, Head of SURF Department | 28/06/2019
OUTLOOK ON WAFER SURFACE SCIENCE & ENGINEERING CAPABILITIES
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WAFER SURFACE SCIENCE & ENGINEERING DEPARTMENT : ID CARD
120 people dedicated to wafer surface treatment Technicians Engineers
Experts on 7 areas of competences : bonding, wet processes, TTH,
implantation, CMP, grinding & epitaxy 10 PhD students
>150 tools from <200m to 300mm Industrial grade 200/300mm toolset
<200mm capabilities
24/7 operations
3 types of activities Basic operations / mature processes Speed, efficiency Engineering / process tuning & integration for on going LETI programs
Long term R&D in collaboration with academics, tool suppliers
IP & Communication > 20 patents / year
Contribution to 100 publications in 2018
1st Leti Prototyping Pilot Line workshop | V. Carron | 28 June 2019
Our goal is to support and
anticipate new applications and
products through the development
of new unit processes, materials
and equipment technologies
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OUR 7 AREAS OF EXPERTISE
WET• Contamination control & cleaning
• Surface preparation
• Wet etching
TTH• Annealing and oxidation atmospheric or low
pressure furnace and RTP• UV Nanosecond Laser Annealing
• High temperature deposition
Poly-Si, a-Si, Si3N4, Low stress SiN, Si Dots
CMP• Front End Applications
SiO2, Si, SiN etc.. Polishing
• Back-End Applications
Cu, W, GST, magnetic materials etc…
Grinding• Dry Polishing (200 / 300mm)
• Edge trimming and dicing (200 / 300mm)
• Grinding : Si, Ge, GaAs, InP, GaN, sapphire, polymer, metal, glass…
Epitaxy (Group IV)• SiGeC RP-CVD : intrinsic or in-situ doped Si/SiGeC
heterostructures for nanoelectronics & optoelectronics
Implantation• All species implant for doping, Smart CutTM and
material modification applications : • Plasma Immersion & ion implantation
• Temperature controlled Implant
Bonding• Si/SiO2, Metal/Metal etc.. Direct Bonding• Thermocompression / Eutetic and Anodic bonding
• Polymer bonding / Temporary bonding
• WTW or DTW bonding
More Than Moore
Substrate
Power
RF
Lighting3DPhotonic
ImagerSensors
More Moore
FDSOI & Quantum
Display
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UNIT PROCESS EXPERTISE: GROUP IV EPITAXY
• Investigated materials in 200 & 300mm
• Column IV epitaxy of undoped/in situ doped: Si,
Ge, Si-Ge, SiGe:C, Ge-Sn, strained or relaxed…
• Blanket or localized & selective epitaxy
• In situ surface preparation (Siconi)
• Low temperature epitaxy (≤500°C) with
• Large panel of applications
• Selected tool Set
Si(001) substrate145 nm BOX
Si(001) substrate
SiGe
Si
SiGe
Si
100 nm100 nm
19 periods Si/Si0.8Ge0.2
superlattice on bulk and SOI
Si(001) substrate145 nm BOX
Si(001) substrate
SiGe
Si
SiGe
Si
100 nm100 nm
19 periods Si/Si0.8Ge0.2
superlattice on bulk and SOI
19 periods Si/SiGe
super-lattice on Si
SiGe RSD for CMOS Nanowire
1st Leti Prototyping Pilot Line workshop | V. Carron | 28 June 2019
Epsilon 3200A 300mmCENT5200 200mm CENT300 300mm
Ge
Si sub.
GeSn µ-disk
GeSn/Ge based
lasers
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• Furnace & RTP
• Anneal and oxidation @ atmospheric or low pressure
• High temperature deposition: Poly-Si, a-Si, Si3N4, Low stress
SiN, Si Dots
• Ge condensation module
• SiGe up to 70% Ge
• Nano second laser annealing module with
• UV 308nm – 80-180ns laser
• From process to simulation of laser/structures interactions
• Selected tool Set
UNIT PROCESS EXPERTISE: THERMAL TREATMENT
2 Levitech RTP LEVITOR
tools in 200 & 300mm
HELLER 200/300mm
Microbumps reflow for 3D ICLT-3100 platform
300mm UV-NLA
Ge condensation on
SiGe nanodots
Yann Almadoriet al J. Phys. Chem. C 2016
Impact of laser anneal on a-Si crystallization
S Kerdiles et al. IWJT 2016
P. Acosta-Alba et al. SSDM 2019
VT412 200/300mm
Oxidation & Annealing
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FOCUS : « COLD » PROCESSES FOR 3D MONOLITHIC INTEGRATION : COOLCUBETM
Low Temperature Epitaxy for top device
Surface Annealing with UV-NLA
< 400°C
UV pulse
Absorption in Si
Limited
heat
diffusion
For more details
S. Kerdiles / JM Hartmann presentation in this WorkShop
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• Direct bonding, a historic collaboration with
• From basics mechanisms to applications
• From Si to metals through III-V
• Metallic bonding
• Direct vs eutectic vs thermo-compression bonding
• Polymer bonding
• Temporary bonding
• Flexible substrate bonding
• Chip to wafer bonding
• Pick & place, collective bonding, self alignment
• Selected tool set
UNIT PROCESS EXPERTISE : BONDINGBonding defects and water diffusion after Si/Si
direct bonding
4h 72h 260h
M. Tedjini et al. APL 2016Al Ge
Si
Bonding
interface
SiO2
SiO2
AlGe eutectic bonding
V. Lumineau et al, ECS trans. 2016
FC1 for die bonding with
precision
Gemini 200/300mm
WtW high precision bonding580CB 200mm
WtW covalent bondingEVG 560&850DB 200/300mm
Debonding tool
20nm thick Si transfer on polymer
P. Montmeat et al. MAM 2017
Collective III-V dies bonding
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FOCUS : 3D STACKING ET HYBRID BONDING FOR 3D IC
Bondinginterface
Coupling betweenCMP – Bonding -
Métrology
Wafer to WaferBonder EVG GEMINI
Chip to WaferPick & Place SET FC1
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UNIT PROCESS EXPERTISE : BONDING
Wafer Bonding
With Intermediate layer
Insulating layer
Polymerbonding
Glass frit bonding
Direct bonding
Mixed surface
Direct bonding
Conductive layer
Polymerbonding
Euteticbonding
Thermo-compres
sion
Direct bonding
No intermediatelayer
Anodicbonding
Direct bonding
Almost all wafer bonding technologies are being addressed at Leti
1st Leti Prototyping Pilot Line workshop | V. Carron | 28 June 2019
For more details see other presentations of this worshop
F. Fournel for LETI expertise on bonding technologies T. Wernicke for EVG vision on recent trends in Wafer Bonding Technology Y. Lamy (LETI) & V. Renault (SOITEC) for Substrate Innovation Center
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UNIT PROCESS EXPERTISE: IMPLANTATION & FRACTURE
• Beamline implantation:
• Three beamlines systems 200 & 300mm
• From 0,2 ke.V to 250 ke.V
• Standard & exotic species available
• Si & III-N doping expertise (experiments & modeling)
• Plasma doping for 2D & 3D structures
• 200-300mm Pulsion®
• Large Smart CutTM expertise with
• Transfer thin crystalline layers onto a foreign substrate
• From basic physics studies with to technology
And possibility
to implant
others species
on demand…
Φ 300mmSi fracture post H2
implantation
Nanoplatets
µcracks Full
wafer
D. Massy et al. PRL 2018
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• Planarization technology as an enabler for all Leti applis
• Heterogeneous integration (3D, LED, hybrid bonding…)
• Advanced CMOS (Gate last, SAC, STI, CoolcubeTM, BEOL, W…)
• Advanced materials (III-V, perovskites…)
• Substrate fabrication
• From coupon samples to 300 mm wafers
• Consumable benchmark and development with suppliers
• Last CMP 300mm tool generation
• Advanced CMP options (End-point / RTPC / Clean / Uniformity control…)
• Multiscale wafer and consumable characterization (Interferometry, AFM,
confocal microscope..)
• JDP with
UNIT PROCESS EXPERTISE : CHEMICAL MECHANICAL POLISHING (CMP)
Within die topography optimization trough
process and design rules (Interferometry)
Ebara F-REX300 300mmUniformity control @ wafer scale : 2nm on 300mm
LK Prime 300mm
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• Process :
• New material grinding : Si, Ge, GaAs, InP, GaN, sapphire,
polymère, metal, glass…
• From samples up to 300 mm
• Consumables test (wheels, resists, …)
• Equipements :
• 1 Disco full auto 200/300 grinding with dry polishing
• 1 Disco Edge trimming & dicing full auto 200 mm / 300 mm
• 2 Disco 200/300 mm
• 2 Okamoto : from samples up to 200 mm
UNIT PROCESS : WAFER THINNING AND DICING
Grinding
on glass
Grinding
on cavities
Grinding on
temporary
substrate
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• Surface preparation, cleaning & Selective etching
• For all Si technologies
• On Ge, III-V and III-N materials
• For packaging & 3D integration
• From manual wet benches to advanced 300mm tools
• Contamination Management
• Backside & bevel cleaning
• Classical contaminant & noble metals
• Particles removal
• Selected tool set
UNIT PROCESS EXPERTISE : WET PROCESSES
Immersion batch
Akrion 200mmSSEC 3301
300mm
SnAg (Ni)
10µm
Cu/Ni/Au
5µm
Selective
etching for
µbump
SiGe selective etch for SiGeOI substrate
J. Widiez et al. ECS trans 2016
Low Ge% SiGe Si0,3Ge0,7
AsGa passivation
mechanisms in H2O2
M. Rebaud et al. UCPSS 2016
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SEZ SP203
200mm
SU3100
300mm
Surface preparation for epi. Regrowth on SiGe
PE Reynal, SPCC 2018
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OUR COLLABORATION OFFER
Mature Processes& Technologies
Wafer service thruLETI 3S (SiliconSpecialitiesSolutions)
IP licensing
TechnologyTransfer
New products & applications
Collaboration thruLETI’s SiliconProduct Divisions (DCOS, DOPT, DTBS)
New Materials & Process
Development
Collaborative bilateral researchon specific project
Common laboratories
Affiliation program
New Equipement Engineering
Specific Joint DevelopmentProgram
A full range of business models to meet our partner’s needs
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CONCLUSION
1st Leti Prototyping Pilot Line workshop | Author | 28 June 2019
o A State of the Art 100-200-300mm tool set & technologies in Surface Science & Engineering Processes
o Strong expertise in
• Epitaxy
• Implantation
• Thermal treatment
• Bonding
• CMP
• Grinding / Dicing
• Wet Processes & contamination management
o At the heart of the SOITEC-CEA « Substrate Innovation Center »
o Access to
• Specific process realization & developments for your needs
• Collaborations on new tool capabilities
• Consumable tests for Wet, CMP, Polymer Bonding, Grinding…