ORGANIZED BY - IMID program book.pdf · 2011-01-17 · ORGANIZED BY The Korean Information Display...

ORGANIZED BY

The Korean Information Display Society (KIDS)Korea Display Industry Association (KDIA)DisplaySearch (DS)The Society for Information Display (SID)

www.imid.or.kr

Special DVD:More than 4,000 papersfrom 2001 to 2010 of IMIDconferences are included!

Final Program

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Welcome Message........................................................................... 04Program Overview ........................................................................... 06General Information ......................................................................... 08

Monday, October 11Tutorial & Workshop ........................................................................... 09

Tuesday, October 12Opening Ceremony ............................................................................ 10Keynote AddressesⅠ,Ⅱ,Ⅲ .............................................................. 10

1. Oxide TFTⅠ ................................................................................... 122. Flexible Display Tech...................................................................... 143. LCTⅠ ............................................................................................. 16

......................................... 185. Display System............................................................................... 206. Thin Film Solar CellⅠ..................................................................... 227. Crystallization ................................................................................. 248. Flexible Display Process ................................................................ 269. LCTⅡ ............................................................................................. 2810. Display-related Phosphors ........................................................... 3011. TFT CircuitsⅠ ............................................................................... 3212. Thin Film Solar CellⅡ................................................................... 3413. Organic TFT ................................................................................. 3614. Flexible Display ApplicationⅠ....................................................... 3815. LCTⅢ ........................................................................................... 4016. Special Properties and Applications of Phosphors....................... 4217. TFT CircuitsⅡ............................................................................... 4418. OLED Materials ............................................................................ 46

Wednesday, October 13Business Forum ............................................................................... 48

19. Integrated AMD............................................................................. 5020. Flexible Display ApplicationⅡ....................................................... 5221. LCTⅣ ........................................................................................... 5422. Design and Synthesis of LED Phosphors..................................... 5623. Human Factor............................................................................... 5824. Phosphorescent OLED................................................................. 6025. Oxide TFTⅡ ................................................................................. 6226. E-Paper Application...................................................................... 6427. LCTⅤ ........................................................................................... 6628. Recent Progress in LED Phosphors............................................. 6829. 3D Image Processing ................................................................... 70

Contents

3October 11-15, 2010

30. White OLED.................................................................................. 7231. Oxide TFTⅢ ................................................................................. 7432. OTFT ............................................................................................ 7633. LCTⅥ ........................................................................................... 7834. Moving Picture Quality.................................................................. 8035. Autostereoscopic DisplayⅠ .......................................................... 8236. OLED DeviceⅠ ............................................................................ 8437. Advanced TFT & Analysis............................................................. 8638. Discharge Physics........................................................................ 8839. Green Display Materials for Future ApplicationsⅠ ....................... 9040. Display Interface........................................................................... 9241. Autostereoscopic DisplayⅡ .......................................................... 9442. OLED DeviceⅡ ............................................................................ 96

Poster Session 1 ............................................................................. 98

Thursday, October 1443. Color/Human Factor/Display MeasurementⅠ ............................ 15644. PDP TV Technology.................................................................... 15845. Green Display Materials for Future ApplicationsⅡ ..................... 16046. LED/BLU/LightingⅠ.................................................................... 16247. Measurement.............................................................................. 16448. Outcoupling ................................................................................ 16649. Color/Human Factor/Display Measurement Ⅱ ........................... 16850. PDP Material & Process ............................................................. 17051. Green Display Materials for Future Applications Ⅲ .................... 17252. LED/BLU/Lighting Ⅱ................................................................... 17453. Volumetric Display and Integral Imaging .................................... 17654. AMOLED..................................................................................... 17855. Color/Human Factor/Display Measurement Ⅲ ........................... 18056. Display Manufacturing & Equipment Ⅰ ...................................... 18257. Mobile Display and Touch Panel Ⅰ ............................................ 18458. LED/BLU/Lighting Ⅲ................................................................... 18659. Hologram.................................................................................... 18860. OLED Process............................................................................ 19061. Color/Human Factor/Display Measurement Ⅳ ........................... 19262. Display Manufacturing & Equipment Ⅰ ...................................... 19463. Mobile Display and Touch Panel Ⅱ ............................................ 19564. LED/BLU/Lighting Ⅳ................................................................... 19665. PDP Cell Structure ..................................................................... 19866. Late-news Session ..................................................................... 200

Poster Session 2 ........................................................................... 202

...................................................................................... 248................................................................................ 256

............................................................................. 266....................................................................................... 271

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Welcome Message

It brings me great pleasure to welcome keynote and invited speakers, participants, and guests. Also, I would like to especially express my deepest gratitude to all the paper presenters to the 10th International Meeting on Information Display, which will be jointly held with International Display Manufacturing Conference and Asia Display 2010 (IMID/IDMC/ASIA DISPLAY 2010).

IMID has grown substantially since its inception 10 years ago and has been serving as a premiere gathering place for the world’s most talented representatives from information display industries, universities, and research laboratories. Each year, over 2,000 delegates participate in this event, during which over 400 distinguished papers are presented. The growth of IMID can be attributed to Korea’s strength in the display industry. The presence of so many prominent industry forces allows the conference to not only share research papers but also feature tangible examples from the industry’s leading edge.

During this year’s IMID Conference, three noted experts will share their knowledge in a keynote address that will establish the meeting’s themes. In an industry that is making rapid progress, there are many compelling topics that require incisive discussion and commentary. Starting things off, the Commissioner of Korea Communications Commission, Taegun Hyung will give a speech on “Green Growth and the Internet Economy”. He will be followed by the President & General Manager of Visual Display Business of Samsung Electronics, Boo-Keun Yoon, who will speak about “The 3rd Wave of TV”. Finally, the professor of Tokyo University of Agriculture and Technology, Yasuhiro Takaki, will give a presentation on “Next-Generation and Ultimate 3D Display”.

For the technical program, 464 papers were selected from a large number of contributed works including 107 invited papers. Their findings will be presented at 66 oral sessions and two poster sessions.

5October 11-15, 2010

Beside the technical program, IMID/IDMC/ASIA DISPLAY 2010 will feature a wide variety of workshops and tutorials that will provide attendees with the chance to share information on an extensive array of topics. This year, there will be two tutorial and workshop topics – Flexible Displays / Electronic Paper and 3D Display.

The Business Forum, co-organized by DisplaySearch, will enable participants to analyze display market issues and explore potential value creation opportunities.

During this year’s IMID, Exhibition co-organized by Korea Display Industry Association will be held as well. Samsung, LG, Merck, and Chisso will be joining an impressive entourage of 100 distinguished companies as they gather to exhibit their cutting-edge display products, materials, and equipments.

Finally, on behalf of the organizing committee, I would like to express my heartfelt gratitude to all of you as well as the various committee members who have generously contributed their time and efforts into the IMID/IDMC/ASIA DISPLAY 2010. Please enjoy our upgraded information display technologies during the IMID/IDMC/ASIA DISPLAY 2010 as well as the dynamic culture of Korea.

Oh-Kyong Kwon General Chair

President of KIDSHanyang Univ.

Ki-Woong WhangGeneral Co-Chair Seoul Nat'l Univ.

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Program Overview

Tutorial & WorkshopMonday, October 11, 13:00~18:00, Room 307

Tutorial13:00~14:00 Organic Thin-Film Transistors for Flexible Active-

Matrix DisplaysH. Klauk (Max Planck Inst. for Solid State Research, Germany)

14:00~15:00 Progresses in 3-D Display TechnologyJ.-Y. Son (Daegu Univ., Korea)

Workshop15:30~16:20 Electronic Paper QR-LPDTM

Y. Masuda (Bridgestone Corp., Japan)

16:20~17:10 Three-dimensional Display Systems based on the Hu-man Visual Field CharacteristicsS. Yano (NHK, Japan)

17:10~18:00 3D Display Quality Evaluation and 3D Display Mea-surement StandardK.-C. Huang (ITRI, Taiwan)

Opening CeremonyTuesday, October 12, 08:40~09:00, Grand Ballroom A

Keynote AddressesTuesday, October 12, 09:00~10:30, Grand Ballroom A

KeynoteⅠGreen Growth and the Internet Economy (09:00)

Mr. Taegun HyungCommissionerKorea Communications Commission, Korea

KeynoteⅡThe 3rd Wave of TV (09:30)

Mr. Boo-Keun YoonPresident & General Manager of Visual Display BusinessSamsung Electronic Co., Ltd., Korea

KeynoteⅢNext-generation and Ultimate 3D Display (10:00)

Prof. Yasuhiro TakakiAssociate ProfessorTokyo Univ. of Agriculture and Tech., Japan

7October 11-15, 2010

Business ForumWednesday, October 13, 09:00~18:00, Room 212, 213IMID Business Forum 2010 will take place on October 13, 2010 in the KINTEX, Korea, co-organized by DisplaySearch Korea and KIDS (The Korea Information Display Society). Attendees will gain accurate market analysis including future plans from leading flat panel companies’ insight in the worldwide FDP market with the latest DisplaySearch industry forecasts and numerous networking opportunities.

ExhibitionTuesday ~ Friday, October 12~15, KINTEX 5 HallThe IMID 2010 opens along with the Korea Electronic Show (KES). The Show features exhibitions and seminars on semiconductors, consumer electronics, and telecommunications. This new format will provide IMID 2010 participants with greater opportunities to experience and discuss state-of-the-art information display technologies. Please take this opportunity to enjoy informative discussion with exhibitors.

BanquetWednesday, October 13 / 19:00~21:00* Location: Grand Hilton Seoul* Fee: USD 60 (You can buy Banquet Ticket at the registration desk.)- The free shuttle bus will be operated from KINTEX to Grand Hilton Seoul.

Awards- Awards of Minister of Education, Science and Technology- Merck Awards- KIDS Awards (Sponsored by LG Display)*- KIDS Awards (Sponsored by Samsung Electronics)*The awardees have been selected from papers submitted to IMID 2010 based upon their originality and technical significance to information display industry. The awards will be presented at the Banquet on Wednesday, October 13, 2010, at the Grand Hilton Seoul Hotel.* These awards were given at the "Day of Display" on October 4, 2010.

Presentation Time for Speakers - Keynote Addresses: 30 min. - Tutorial & Workshop: 50~60 min. (Including 5 min. Q&A) - Invited: 25 min. (Including 5 min. Q&A) - Oral: 20 min. (Including 5 min. Q&A)

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General Information

10th Anniversary SPECIAL DVD PROCEEDINGSYou can find more than 4,000 papers from the SPECIAL DVD PROCEEDINGS, which were presented from the year of 2001 to 2010 at the IMID Conference.

Preview RoomFor speakers a slide preview room will be available at the Business Meeting Room (3F), next to Room 307.

Registration Desk HoursThe IMID 2010 registration desk will be located at the Lobby(3F). You can register on-site during the hours listed below.

Monday, October 11 ............................... 10:00 - 18:00 Tuesday, October 12 .............................. 08:00 - 18:00 Wednesday, October 13 ........................ 08:00 - 18:00 Thursday, October 14 ............................ 08:00 - 18:00

Cloak RoomA cloakroom including a luggage storage area is located next to Room 304.

Internet LoungeThe Internet Lounge, sponsored by Samsung Electronics is located near the registration area. You can bring your own lab-top computer for internet connection or use the computers in the Internet Lounge with high-speed Internet access.

Conference Language

9October 11-15, 2010

Tutorial & Workshop

[T-1] 13:00[Flexible Displays/Electronic Paper] Chair: C.-K. Song (Dong-A Univ., Korea)

Organic Thin-Film Transistors for Flexible Active-Matrix Displays

H. Klauk (Max Planck Inst., Germany)

[T-2] 14:00[3D Displays] Chair: M.-C. Park (KIST, Korea)

Progress in 3D Display Technology

J.-Y. Son (Daegu Univ., Korea)

[W-1] 15:30[Flexible Displays/Electronic Paper] Chair: C.-K. Song (Dong-A Univ., Korea)

Electronic Paper QR-LPD™

Y. Masuda (Bridgestone Corp., Japan)

[W-2] 16:20[3D Displays] Chair: M.-C. Park (KIST, Korea)

Three-dimensional Display Systems Based on the Human Visual Field Characteristics

S. Yano (NHK Science and Tech. Research Lab., Japan)

[W-3] 17:10[3D Displays] Chair: M.-C. Park (KIST, Korea)

3D Display Quality Evaluation and 3D Display Measurement Standard

K.-C. Huang (ITRI, Taiwan)

Room 307

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Opening Ceremony

- Chair: S.-D. Lee (Executive Committee Chair, Seoul Nat'l Univ., Korea)

- Welcoming Address: O.-K. Kwon (General Chair, Hanyang Univ., Korea)- Congratulatory Remark 1: M. Anandan (President of SID, USA)- Congratulatory Remark 2: M.-K. Jeong (Director General for Electronics and

IT Industries, MKE, Korea)

Keynote Addresses

- Chair: T.-H. Yoon (Program Committee Chair, Pusan Nat'l Univ., Korea)

[KeynoteⅠ] 09:00

Green Growth and the Internet Economy

Taegun Hyung (Korea Communications Commission, Korea)

He previously worked at the core strategic divisions of the former Ministry of Information and Communication in the Information Communications Policy Bureau, as well as in the Informatization Planning Bureau. His ceaseless efforts and endeavors to develop the Korean IT industry have been highly recognized, notably through the Service Merit Medal and Red Stripes Service Merit Medal conferred upon him by the Government

Commissioner Hyung has become interested in the promotion

expansion of IPTV, the representative convergence service in mobile communications. After graduation from Sungkyunkwan University in Economics, he received his Masters degree in Business Administration at the State University of New York. From 1994 to 1996, Commissioner Hyung served as a research fellow at the INTELSAT where he acquired a reputation for having a global perspective as an expert in overall wired and wireless information communications.

Grand Ballroom A

Grand Ballroom A

11October 11-15, 2010

Keynote Addresses

[KeynoteⅡ] 09:30

The 3rd Wave of TV

Boo-Keun Yoon (Samsung Electronics Co., Ltd., Korea)

He oversees all activities surrounding a broad portfolio of devices, including TVs, monitors, blu-ray players and other connected consumer digital products. Under his leadership, the division has maintained its No.1 status in terms of global market share for TVs, monitors, and blu-ray players. In addition, he has successfully led several efforts to commercialize market-leading innovations such as Samsung's LED TV in 2009 and, most recently, the company’s total 3D entertainment solution – a full product suite consisting of TVs, blu-ray home theater systems and glasses that makes it possible for consumers to enjoy 3D content in the comfort of their homes.

[KeynoteⅢ] 10:00

Next-generation and Ultimate 3D Display

Yasuhiro Takaki (Tokyo Univ. of Agriculture and Tech., Japan)

He received his B.S. degree, M.S. degree, and Dr. degree from Waseda Univ. in 1986, 1988, and 1992, respectively. His research interests are 3D displays and holography. He is a leader of the 3D image technology working group of the Ultra-Realistic Communications Forum (URCF) of Japan, and a chairman of the 3D image technology research group of the Institute of Image Information and Television Engineers (ITE) of Japan.

Grand Ballroom A

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1. Oxide TFT Ⅰ

- Chair: M. Wong (Hong Kong Univ. of Science & Tech., China)- Co-chair: S.-H. Park (ETRI, Korea)

[1-1] 10:50

[Invited] Effects of Interfacial Processes of Gate Dielectric on Electrical Properties and Reliability of Bottom-Gate ZnO TFTs

M. Furuta, T. Hiramatsu, T. Matsuda, T. Hirao (Kochi Univ. of Tech., Japan), and M. Kimura (Ryukoku Univ., Japan)

Effects of interfacial processes of gate dielectric on electrical properties and reliability of bottom-gate ZnO TFTs were investigated. A decrease of the variation in deep traps leads to improve uniformity of subthreshold characteristics. A charge trapping in a gate dielectric would be an origin of BT instability of the ZnO TFTs.

[1-2] 11:15

Titanium Oxide Protection Layer on Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors

T.-H. Shih, F.-W. Chang, S.-S. Wang, C.-W. Chou, L.-C. Lee, H.-H Lu, H.-C. Ting, C.-Y.Chen, and Y.-H. Lin (AU Optronics Corp., Taiwan)

A method to improve the amorphous indium-gallium-zinc-oxide thin-film transistors environment stability is demonstrated in this study. A titanium oxide passivation layer is employed as ultraviolet light shielding layer to suppress the threshold voltage shift from -38.0 to -7.0V. The titanium oxide layer is formed by sulfur hexafluoride plasma cut followed by an oxygen plasma treatment on titanium layer. We also prepare the titanium oxide layer via sputter system due to the uniform oxygen atomic depth

prior method. The ultraviolet induced threshold voltage shift can further improve.

Room 305

13October 11-15, 2010

1. Oxide TFT Ⅰ

[1-3] 11:35

[Invited] Scaling Behavior of Self-Aligned Zinc Oxide Thin-Film Transistor

Z. Ye and M. Wong (The Hong Kong Univ. of Science & Tech., Hong Kong)

Polycrystalline zinc oxide thin-film transistors have been built using a simple process technology that combines in one step the etching of the gatestack and the doping of the source/drain regions. The resulting transistors exhibit an effective mobility of ~173 cm2/Vs, a linearly extrapolated threshold voltage of ~1V, a pseudo sub-threshold slope of ~185mV/decade and an on/off current ratio of ~4×107. These characteristics are found to behave nicely with reducing channel length, exhibiting short-

Room 305

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2. Flexible Display Tech.

- Chair: C. K. Song (Dong-A Univ., Korea)- Co-chair: T. Sekitani (Univ. of Tokyo, Japan)

[2-1] 10:50

[Invited] Recent Developments in PEDOT/PSS for Transpar-ent Flexible Electrodes

F. Louwet, D. Bollen, and B. Muys (Agfa-Gevaert NV, Belgium)

This presentation will show the progress and status of PEDOT/PSS, a conducting polymer, marketed as OrgaconTM. Key properties are low surface resistance, high optical transmission,

[2-2] 11:15

[Invited] Progress on Direct Roll-to-Roll Manufacturing of Display Backplanes onto Plastic Substrates Using Self-Aligned Imprint Lithography (SAIL)

H.-J. Kim, M. Almanza-Workman, S. Braymen, R. Garcia, J. Hauschildt, K. Junge, O. Kwon, D. Larson, D. Stieler, F. Jeffrey (Phicot Inc., USA) R. Cobene, R. Elder, E. Holland, W. Jackson, M. Jam, A. Jeans, H. Luo, J. Maltabes, P. Mei, C. Perlov, M. Smith, and C. Taussig (Hewlett Packard Co., USA)

Self-aligned imprint lithography (SAIL) enables roll-to-roll

moving plastic substrates without incorporating carriers. In this presentation, the authors report progress made in the areas of cost, scaling, and materials, in an effort to bring SAIL-based R2R production to life.

Room 306

15October 11-15, 2010

2. Flexible Display Tech.

[2-3] 11:40

Flexible OTFT Backplane Fabricated by Transfer Technol-ogy

T. Yamamoto, T. Takei, Y. Nakajima, Y. Fujisaki, H. Fujikake, S. Tokito (NHK Science & Tech. Research Lab., Japan), T. Furukawa, M. Hosoi, and A. Kinoshita (Kyodo Printing Co., Ltd., Japan)

A new transfer technology to realize flexible organic thin film transistors (OTFTs) on a plastic substrate has been developed. A wide-QQVGA OTFT array was fabricated using this technology, and the characteristics of the transferred OTFT were almost unchanged after the transfer process.

Room 306

16

3. LCT Ⅰ

- Chair: H. Coles (Univ. of Cambridge, UK)- Co-chair: S. H. Lee (Chonbuk Nat’l Univ., Korea)

[3-1] 10:50

[Invited] Maskless Micro-Multidomain Photoalignment

H. Yokoyama, C. Culbreath, and N. Glazar (Kent State Univ., Japan)

Microscopic orientational surface patterns have been demonstrated to exhibit a variety of novel functionalities such as the surface alignment multi-stability. To explore further possibilities of the patterning concept by means of the photoalignment technology, we developed a fully automated maskless polarized-UV- light pattern exposure system.

[3-2] 11:15

[Invited] Liquid Crystal Polar State and Fast Switching

L. Komitov (Univ. of Gothenburg, Sweden)

Some of the liquid crystal materials exhibit states with spontaneous and/or field-induced polarization. The coupling

liquid crystal enables fast switching of the liquid crystals and thus generation of fast electro-optic response. Very attractive for

polarized state in short pitch cholesterics. An electric field applied perpendicular to the cholesteric helix axis results in fast switching of the liquid crystal molecules around the field direction giving thus rise to an electro-optic response with switching times in the microsecond region.

Room 307

17October 11-15, 2010

3. LCT Ⅰ

[3-3] 11:40

Wide-View Vertical Alignment Liquid Crystal Cell Consisting of a Biaxial Film and a Negative C-Plate

J.-W. Moon, D.-E. Lim, B.-J. Mun, and G.-D. Lee (Dong-A Univ., Korea)

liquid crystal (LC) cell to improve the viewing angle in the oblique direction. VA LC cell has the excellent viewing angle characteristic in the normal direction due to the no-phase retardation of the light passing through the LC cell. However, the change of the phase retardation occurs in the oblique directions, which deteriorate the viewing angle characteristic in the dark state. We designed the optical structure and performed optical configuration on a Poincaré sphere. From calculations, we

angle property compared with conventional VA LC cell.

Room 307

18

- Chair: D. Y. Jeon (KAIST, Korea)- Co-chair: Y. Wang (Lanzhou Univ., China)

[4-1] 10:50

[Invited] Combi-Chem Approach to Natride Phopshors for Use in LEDs

K.-S. Sohn, W. B. Park, S. P. Singh, and J. W. Park (Sunchon Nat’l Univ., Korea)

CASIN, Sr2Si5N8, - and -SIALON phosphors has been spotlighted in last several years in an attempt to use them in white LEDs. It is worthwhile to discover new phosphors in the outside of these phosphors’ composition range. In this regard, high-throughput screening would be effective.

[4-2] 11:15

[Invited] Technologies for Precision Phosphor Coatings on LEDs

S. E. Chung, J. Jang, S. Han, Y. J. Choi, and S. Kwon (Seoul Nat’l Univ., Korea)

We demonstrate conformal phosphor coating and patterning methods on light emitting diodes (LEDs) using image processing based maskless lithography (IP-ML) system. IP-ML allows a real-time detection and dynamic mask generation for phosphor coating of randomly dispersed LEDs. We demonstrated conformal yellow phosphor coating on blue LEDs for uniform white light illumination considering top contacts opening.

Room 301

19October 11-15, 2010

[4-3] 11:40

[Awarded Paper - Merck Award]Computational Study on Cation Effects on Emission Wavelength of Ca1-x MxAlSiN3:Eu2+(M=Li,Na,Mg, Sr,Ba,Y,La)

H. Onuma, I. Yamashita, R. Nagumo, R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, and A. Miyamoto (Tohoku Univ., Japan)

This study aimed to establish an emission wavelength (EW) control scheme for Eu2+-doped phosphors using quantum chemistry insights. We calculated electronic structure of M-doped CaAlSiN3:Eu2+ phosphors (M=Li,Na,Mg,Sr,Ba,Y,La). Our calculation results are summarized as follows: (1) Li/Na/Mg would make EW short, (2) effect of Sr/Ba on EW would be small, (3) Y/La would make EW longer. These difference depends on cation (n-1)d orbitals. Li/Na/Mg and Y/La make smaller and larger interactions with Eu than that of Ca/Sr/Ba, respectively. We could modify EW of Eu2+-doped phosphors by varying interaction between Eu 5d and cation (n-1)d orbitals.

Room 301

20

5. Display System

- Chair: R. Hattori (Kyushu Univ., Japan)- Co-chair: S.-W. Lee (Kyung Hee Univ., Korea)

[5-1] 10:50

[Invited] Hyperrealistic Head-Up-Display for Automotive Application

H. Okumura, T. Sasaki, A. Hotta, A. Moriya, N. Okada, and O. Nagahara (Toshiba Corp., Japan)

We proposed a novel hyperrealistic head-up display(HUD) concept(WARP) and developed a prototype WARP system. It uses monocular vision that eliminates the depth cues caused by Parallax information. Our developed WARP system achieved a free depth control of the HUD image position.

[5-2] 11:15

[Invited] Implementation of Image Enhancement Algo-rithm with Less Computational Complexity for Real-Time Processing

B.-H. Hwang, J.-H. Yun, and M.-R. Choi (Hanyang Univ., Korea)

In this paper, we propose an image enhancement algorithm with less computational complexity than the existing ones. The

the contrast enhancement block and the color enhancement block. The proposed algorithm has been implemented in FPGA (XCV300E). The simulation and experimental results show that the proposed algorithm provides better performance and lower computational complexity than the conventional algorithms.

Room 303

21October 11-15, 2010

5. Display System

[5-3] 11:40

A Projection System with Light Emitting Diodes that uses a Color Overlap Method

Y. Chi, and K. Bok (LG Electronics Inc., Korea)

This paper is a description of additional color mixing on projection systems with Light Emitting Diodes (LEDs) in consideration of the primary color overlap method for increasing brightness. The color overlap method achieves secondary colors (Yellow, Cyan, and Magenta) from primary colors (Red, Green and Blue) synthesis in on LEDs driven system. The primary color overlap method improves brightness of the projected image by 30 percent compared to a non-color overlap method in a projection system with LEDs. The system uses a LEDs and has color order using sequential colors composed of red, yellow, green, cyan and blue.

[5-4] 12:00

Performance Comparison of Fast Bilateral Motion Esti-mation Algorithms for Frame Rate Up-Conversion

D.-G. Yoo, S.-J. Kang, S. K. Lee, and Y. H. Kim (POSTECH, Korea)

In this paper, we firstly propose a fast search model for bilateral motion estimation, which is one of the widely used motion estimation algorithms in frame rate up-conversion for liquid crystal display devices. Additionally, we compare the performance of seven well-known fast search algorithms using the proposed fast search model. The experimental results show that the kite-cross-diamond search is the fastest algorithm and the diamond search is the most accurate algorithm among the seven fast search algorithms.

Room 303

22

6. Thin Film Solar Cell Ⅰ

- Chair: J. H. Yun (KIER, Korea)- Co-chair: H. Pak (LG Innotek Co., Ltd., Korea)

[6-1] 10:50

[Invited] Tandem and Hybrid Dye-Sensitized Solar Cells and Materials for Them

S. Hayase (Kyushu Inst. of Tech., Japan)

Tandem and hybrid dye-sensitized solar cells are reported. These cells consist of two electrodes in one cell. These electrodes were stained by two dyes covering different wavelengths. It was demonstrated that these cells have potential to cover wide range of wavelengths.

[6-2] 11:15

Improvement of Polymer Bulkheterojunction Photovolta-ic Cells by Introducing a Thin Polymeric Interfacial Layer

M.-R. Choi, K.-G. Lim, and T.-W. Lee (POSTECH, Korea)

We achieved improved open-circuit voltage, short-circuit current, and fill factor in polymer bulkheterojunction photovoltaic cells by introducing thin polymeric layer, PHS (poly(4-vinylphenol), as an electron extraction layer. A thin polymeric interfacial layer between a photoactive layer and an Al cathode causes built-in potential to increase and carrier injection/extraction to be facilitated. As a result, the power conversion efficiency of the device is significantly enhanced by using the simple solution process.

Room 304

23October 11-15, 2010

6. Thin Film Solar Cell Ⅰ

[6-3] 11:35

J. W. Choi, M. J. Lim , K. Chandramouli, J. H. Kwon (Kyung Hee Univ., Korea), D. H. Huh , and M. Chae (Cheil Industries Inc., Korea)

We report a new buffer layer for polymer solar cells using the blends of poly(3-hexylthiophene) (P3HT), and [6,6]-phenyl-C61-butyric acid methylester (PCBM). This new buffer layer provides improved dark current flow, stable photocurrent, and high fill factor characteristics compared with PEDOT:PSS layer. As a result, efficiency is increased by 12% compared with control PEDOT:PSS devices.

Room 304

24

7. Crystallization

- Chair: H. J. Kim (Yonsei Univ., Korea)- Co-chair: J.-K. Kang (DGIST, Korea)

[7-1] 13:30

[Invited] Single-Grain Si TFTs with High Performance Surpassing SOI-TFTs

R. Ishihara, T. Chen, and K. Beenakker (Delft Univ. of Tech., Netherlands)

We have fabricated high performance single-grain Si TFT which surpass SOI performance due to both (100) and (110) surface and in-plane orientation-controlled Si grains through the MILC

is well suitable for monolithic integration of memories, analog and RF circuits on a glass substrate.

[7-2] 13:55

Joule-Heating Induced Crystallization for AMOLED TFT-Backplanes

W.-E. Hong, D. J. Park J.-S. Ro (Hongik Univ., Korea), I. Jang, C.-S. Jun (EnSilTech Corp., Korea), C. S. Kim, W. P. Lee, and H. D. Kim (Samsung Mobile Display Co., Ltd., Korea)

A Mo-layer used as a gate electrode was employed as a conductive layer for Joule-heating induced crystallization of

JIC poly-Si TFTs were fabricated using an optimized processing suggested in this work compatible to mass production of AMOLED panels.

Room 305

25October 11-15, 2010

7. Crystallization

[7-3] 14:15

Polycrystalline Silicon by Aluminum Induced Crystallization

H. Jin, S. Park, B. Kim and B. Bae (Hoseo Univ., Korea)

In this work, Aluminum Induced Crystallization (AIC) of a-Si has

substrates at 250℃ by PECVD. Then Al layers were deposited on a-Si layers by sputtering to fabricate glass/ a-Si / Al samples. The annealing temperature was set at 450,475,500℃,respectively; and maintained a temperature during 12 hours in the annealing stage. The degree of crystallization of the

XRD analysis was used to identify the degree of crystallization.

[7-4] 14:35

Effect of Overlap Area on Performance of CLC LTPS TFT

W. G. Lee and J. Jang (Kyung Hee Univ., Korea)

We have studied the effect of overlap area on performance of CW laser crystallized (CLC) LTPS TFT. It is found that the sequential lateral crystallized region increases with increasing overlap area. The TFT using 60% overlap scan exhibited the field-effect mobility of poly-Si TFT to 197.5cm2/Vs and gate voltage swing of 0.27 V/decade.

Room 305

26

8. Flexible Display Process

- Chair: Y.-Y. Noh (Hanbat Nat’l Univ., Korea)- Co-chair: H. Klauk (Max Planck Inst. for Solid State Resarch, Germany)

[8-1] 13:30

[Invited] Organic Nonvolatile Memory Sheet for Large-Area, Flexible, Intelligent Sensor Arrays

T. Sekitani, T. Someya (The Univ. of Tokyo, Japan), U. Zschieschang, and H. Klauk (Max Planck Inst. for Solid State Research, Germany)

In this paper, we describe the implementation of nonvolatile memory arrays using organic floating-gate transistors on flexible plastic substrates. The most critical component, the gate dielectric, is a self-assembled monolayer with a thickness of 2.1 nm. The small thickness of the dielectric allows the

those required by silicon devices and produces a nonvolatile threshold voltage shift of approximately 2.5 V. The endurance of our organic memory devices is within an order of magnitude of that of current state-of-the-art silicon-based flash memory.

transistors with a pressure-sensitive rubber sheet, we have realized an intelligent sensor matrix that detects the spatial distribution of the applied mechanical pressure and stores the analog sensor input as a two-dimensional image over long periods of time.

[8-2] 13:55

[Awarded Paper - KIDS Award (Silver Prize, Sponsored by LG Display)]GReCoSS Process for Fabrication of Flexible Oxide TFT

J. Jin, J.-H. Ko, S.-J. Seo, Y. H. Hwang, B.-S. Bae (KAIST, Korea), S.-H. Ko Park, S. M. Yoon, M. K. Ryu, S. H. Yang, O.-S. Kwon, and E.-S. Park (ETRI, Korea)

Oxide TFT arrays were fabricated on a low thermal expansion transparent plastic substrate by, so-called GReCoSS process (Glass-fabric Reinforced Coating Films on Surface-treated

can be released from a glass carrier plate after the TFT fabrication by a simple de-bonding without using any adhesives, laser release or transfer technique.

Room 306

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8. Flexible Display Process

[8-3] 14:15

Flexible Color Active Matrix Electrophoretic Display De-veloped by using Direct Color Filter Coating Technology

O.-N. Kwon, Y. I. Park, Y. M. Oh, C.-D. Kim, and Y.-K. Hwang (LG Display Co., Ltd., Korea)

We demonstrate a flexible color electrophoretic display by means of a direct color filter which is formed onto the electrophoretic film laminated on thin film transistor panel without color filter substrate. A direct color filter coating technology is adapted for our prototype to be fabricated as a B5-sized panel. It shows bendable, paper -like look as well as excellent quality display.

[8-4] 14:35

Sub-Pixel RGB-Colored Cholesteric Display on Single Plastic Substrate

B.-Y. Lee, S.-K. Park, H.-S. Cho, J.-H. Lee (NDIS Corp., Korea), and S.-B. Kwon (Hoseo Univ., Korea)

We achieved RGB sub-pixeled color onto single plastic substrate using cholesteric liquid crystal. Mixture of a photo-sensitive chiral dopant and a nematic host was encapsulated and coated onto a surface. By irradiating UV with different energy into each sub-pixel zone, separate RGB sub-pixel could

UV curing process desirable for roll to roll production.

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9. LCTⅡ

- Chair: H. S. Kwok (The Hong Kong Univ. of Science and Tech., Hong Kong)- Co-chair: D. Kang (Soongsil Univ., Korea)

[9-1] 13:30

[Invited] Ultrafast Switching Liquid Crystals for Electro-Optic Transmissive and Reflective Displays and Microscopic Lasers

H. J. Coles, S. M. Morris, F. Castles, P. J. W Hands, and T. D. Wilkinson (Univ. of Cambridge, UK)

We have used novel liquid crystals with extremely large

modes, namely 1) the uniform lying helix, that leads to in-plain

analogue or grey scale capability, 2) the uniform standing helix, using planar surface alignment and in-plane fields, with sub ms response times and optical contrasts in excess of 5000:1 with a perfect black “off state”, 3) the wide temperature range

high slope efficiency, wide wavelength range tunable narrow linewidth microscopic liquid crystal lasers.

[9-2] 13:55

[Invited] Hole Induced Vertical Alignment LC Mode for High Transmittance Mobile Displays

Y.-K. Jang, S. J. Lee, J. Y. Lee, Y. Li, J. H. Hwang, S. W. Kim, C. W. Shim, J. Y. Seo, N. J. Kim, Y. J. Ahn, N. H. Kim, S. H. Ahn, S. R. Lee, D. H. Park, and C. W. Kim (Samsung Mobile Display, Co., Ltd., Korea)

We have developed a novel VA LCD using polymer stabilized liquid crystal technology. The new mode uses a via hole of an organic layer on TFT substrate to achieve multi domain alignment, and is free from the ITO pattern or protrusion on color filter. This technology, named as Hole Induced Vertical Alignment mode (Hi-VA), can realize the transmittance of 135% and the half of response time compared to the conventional VA mode.

Room 307

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9. LCTⅡ

[9-3] 14:20

Viewing-Angle-Dependent Liquid Crystal Displays

A. Y.-G. Fuh, J.-C. Chen, S.-Y. Huang, and K.-T. Cheng (Nat’l Cheng Kung Univ., Taiwan)

This work demonstrates the feasibility of binary liquid crystal (LC) alignments, in which two forms of LC alignment are in a specific area using a surface-treated alignment layer and a photoalignment film of the adsorption of azo dyes onto the polymer surface in azo dye-doped LCs. Binary LC alignments that involve two of common LC alignments, which are homogeneous, homeotropic, hybrid and twisted nematic alignments, are initially demonstrated. Then, a binary LC alignment that comprises hybrid and homeotropic alignments is adopted to fabricate a viewing-angle-dependent LC display, which displays two images by changing viewing angles.

Room 307

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10. Display-related Phosphors

- Chair: K. Ohmi (Tottori Univ., Japan)- Co-chair: H.-K. Jung (KRICT, Korea)

[10-1] 13:30

[Invited] Recent Development of Display Phosphors and Their Applications

K. Ohmi (Tottori Univ., Japan)

Recent progress of our research on display phosphors and their applications has been reviewed. An engineering of absorption band of VUV region has been attempted in oxyfluoapatite or lanthanide oxyfluoride host materials. A novel emissive LCD consisting of patterned RGB phosphor layers and near-UV LEDs have been also proposed.

[10-2] 13:55

[Invited] Synthesis of Green- and Red-Emitting Nanophos-phors for Application to Transparent Plasma Display Panels

W.-S. Song, H.-N. Choi, Y.-S. Kim, and H. Yang (Hongik Univ., Korea)

Green-emitting LaPO4:Ce,Tb nanophosphors were produced via a modif ied ci tr ic acid-assisted sol-gel route. The optimized nanophosphors were subsequently dispersed in 2-methoxyethanol and highly transparent green-emitting nanophosphor layer was formed via a spin-coating of the dispersion. The spin-coating was repeated to increase the thickness of nanophosphor layer. Despite multiple coatings, all nanophosphor layers maintained an excellent visible transparency. Ultimately, using the nanophosphor layer deposited on glass substrate, transparent plasma display panels (PDPs) were fabricated and their luminance characteristic was described. Red-emitting nanophosphors of Y2O3:Eu or YVO4:Euwere also synthesized and utilized for fabrication of transparent plasma devices.

Room 301

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10. Display-related Phosphors

[10-3] 14:20

[Invited] Recent Research and Development of Vacuum-Ultraviolet Phosphors

Y. Wang, W. Liang, and H. Zhang (Lanzhou Univ., China)

unity are expected as promising vacuum-ultraviolet phosphors for application in high performance plasma display panels and mercury-free fluorescent tubes. In this work, recent research on quantum cutting phosphors as novel type of VUV optical

is presented.

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11. TFT Circuits Ⅰ

- Chair: B. S. Bae (Hoseo Univ., Korea)- Co-chair: B.-D. Choi (Hanyang Univ., Korea)

[11-1] 13:30

[Awarded Paper - Merck Young Scientist Award]Disturb-Free Ferroelectric Nonvolatile Memory Cell for Oxide TFT-Based Low-Power Display Panels

B. Kim, C. Byun, S. Yang, S.-W. Jung, M. Ryu, S.-H. Ko Park, C.-S. Hwang, K.-I. Cho, O.-S. Kwon, E.-S. Park, K.-H. Kim, S.-M. Yoon, (ETRI, Korea), and K. Park (Konkuk Univ., Korea)

A nonvolatile ferroelectric random access memory cell was proposed for the power reduction of display panel, which was designed to be composed of two In-Ga-Zn-O (IGZO) thin-film-transistors (TFTs) and a ferroelectric memory TFT (feTFT) (2T/1FT). Amorphous IGZO and poly (vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were employed as semiconducting channels for both TFTs and a gate insulator for feFET, respectively. All the fabrication processes were performed below 200oC on the glass substrate [1-2]. The fabricated 2T/1FT memory cell successfully demonstrated the write/readout and disturb-free operations.

[11-2] 13:50

A DC-DC Converter for Depletion-Mode Oxide TFTs

M. Oh, B. Kim, R. Tao, J. Pi, H. Leem, J. Kim, H. Oh, and K. Park (Konkuk Univ., Korea)

A novel DC-DC converter composed of n-channel oxide TFTs which operate in depletion-mode is reported. 5 V and 10 V DC power supply sources and clock signals are used to generate a DC voltage higher than 20 V. The two voltage levels in the proposed DC-DC converter make VGS.OFF of the TFTs -5 V so that the depletion-mode TFTs can be turned off completely.

the new DC-DC converter is 77 % for the TFTs with VT =-2 ~ -3 V.

Room 303

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11. TFT Circuits Ⅰ

[11-3] 14:10

A High Swing Range Cross Coupled DC-DC Converter using P-type LTPS TFTs for Mobile TFT-LCDs

C.-W. Song, K.-N. Kim, S.-J. Ahn, J.-S. Kang, O.-K. Kwon (Hanyang Univ., Korea), J. S. Lee, D. H. Lee, and C. W. Kim (Samsung Mobile Display Co., Ltd., Korea)

A cross coupled DC-DC converter using p-type low temperature

proposed for mobile TFT liquid crystal displays (LCDs). When input voltage is 5.5 V, the measured results show that the output

[11-4] 14:30

High Stable External Compensated Method for AMOLED

K.-W. Chou, F.-C. Chang, C.-C. Hung, and C.-L. Lin (Nat’l Cheng Kung Univ., Taiwan)

This work proposes a novel external compensated driving method for AMOLED displays, while the pixel circuit is only 2T1C. The proposed method can stably compensate for the threshold voltage shift of the diving TFT and OLED degradation in pixels. Measurement results shown the current degradation of the proposed driving scheme for the 2T1C pixel circuit is less than 5% for 36hr at 1000C.

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12. Thin Film Solar Cell Ⅱ

- Chair: J. Yi (Sungkyunkwan Univ., Korea)- Co-chair: F. Koo (Minghsin Univ. of Science and Tech., Taiwan)

[12-1] 13:30

[Invited] Influence of Deposition Conditions on the Properties of All Sputtered CdS/CdTe Thin Film Solar Cells

J. Lee, H. Ryu, S. Kim, and S. Lee (Kunsan Nat’l Univ., Korea)

Effects of preparation conditions such as substrate temperature and dry CdCl2 treatments on the structural and optical

solar cells were fabricated by all sputtering process and the cell characteristics were studied. The photovoltaic properties of the CdS/CdTe solar cell were considerably improved with the increase in the substrate and annealing temperature, which was caused by the increase of (111) texture and grain size in CdTe

[12-2] 13:55

Large-Area and Light-Weight Film Solar Modules

A. Takano, N. Ohse, K. Tokoi, K. Takenaka, S. Sawayanagi, T. Tsuji, T. Wada, and H. Matsuyama (Fuji Electric Holdings Co., Ltd., Japan)

and modules were established. Roll-to-roll production lines

heat resisting plastic substrates. Various kinds of solar modules using the flexible film solar cells have been developed and

are also described.

Room 304

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12. Thin Film Solar Cell Ⅱ

[12-3] 14:15

[Invited] Technical Development, Industrial Infrastructure and Supply Chain of CIS/CIGS Photovoltaic Cells

H. S. Koo and M. Chen (Minghsin Univ. of Science and Tech., Taiwan)

Chalcopyrite-based solar cells have been raised considerable echo and research activities, because of its advantages are

The function of absorber layer of chalcopyrite- based material

of suitable materials, processes & characteristics is critical item

This paper demonstrates technical development, supply chain and infrastructure of CIGS solar cells, especially for the case of Taiwan photovoltaic CIS/CIGS industry.

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13. Organic TFT

- Chair: Y. Fujisaki (NHK, Japan)- Co-chair: M. P. Hong (Korea Univ., Korea)

[13-1] 15:10

[Invited] Fabrication of High-Performance Organic Thin-Film Transistor and Their Application to Flexible Displays

Y. Fujisaki, T. Takei, Y. Nakajima, H. Sato, M. Suzuki, H. Fukagawa, G. Motomura, T. Shimizu, M. Nakata, T. Yamamoto, H. Fujikake, and S. Tokito (NHK Science and Tech. Research Lab., Japan)

We have demonstrated a 5-inch flexible displays driven by organic TFT. In order to achieve high-quality and high-resolution moving images, OTFTs with high performances such as a high mobility, high ON/OFF ratio, low sub-threshold slope (SS), are

were successfully integrated on the OTFT arrays.

[13-2] 15:35

Low-Voltage Organic Transistors with Improved Stability

U. Zschieschang, H. Klauk (Max Planck Inst. for Solid State Research, Germany), T. Yamamoto, K. Takimiya (Hiroshima Univ., Japan), H. Kuwabara, M. Ikeda (Nippon Kayaku Co., Japan), T. Sekitani, and T. Someya (Univ. of Tokyo, Japan)

on a new conjugated organic semiconductor, dinaphtho-[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT). Compared with the more widely utilized small-molecule organic semiconductor,

effect mobility (greater than 1 cm2/Vs), but better stability against air-induced oxidation and hence better long-term air stability. The bias stress-induced threshold voltage shift is similar to that of hydrogenated amorphous silicon TFTs.

Room 305

37October 11-15, 2010

13. Organic TFT

[13-3] 15:55

New Approaches for Solvent Attack Free Poly 4-Vinyl Phenols (PVPs) as Organic Gate Dielectric in All Solution-Processed Organic Thin-Film Transistor

D. Kim, D. Kim, H. Kim, M. Hong (Korea Univ., Korea), B. Kim, and W. Kim (DongJin Semichem Co., Ltd., Korea)

The solvent attack between an organic semiconductor (OSC), especially the solution–processable OSC, and an organic gate insulator (OGI) is studied. The new poly 4-vinly phenol l(PVP) was the material of organic gate dielectric with solvent attack

Our new PVP formulation deposited by spin-coating enables

and highly stable performance, even after severe polar solvent treatment.

[13-4] 16:15

[Invited] A Large-Area Printed Organic Transistor Active Matrix for Skin-Like Interfaces

T. Sekitani and T. Someya (The Univ. of Tokyo, Japan)

We have manufactured large-area organic transistor active matrix using printing technologies. With integrating printed stretchable wirings as carbon-nanotube based elastic conductors and the printed transistor active matrices, rubber-like stretchable active matrix and integrated circuits have been manufactured for applications to next generation’s ambient-electronics/human interfaces. The stretchable devices can spread over arbitrary curved surfaces including free-formed curvatures and movable parts, thereby significantly expand where electronic devices can be used around human daily-life.

Room 305

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14. Flexible Display Application Ⅰ

- Chair: B. Koo (SAIT, Korea)- Co-chair: R. Hattori (Kyushu Univ., Japan)

[14-1] 15:10

[Invited] Mono-color Monolayer Rotating Ball Electronic Paper Display

H.-S. Lee, H.-Y. Cha, J. M. Park, Y. W. Lee, C. H. Lee, S. J. Kim, S. Lee, J.-B. Kwak, and Y. Oh (Samsung Electro-Mechanics Co., Ltd., Korea)

RGB mono-colors were incorporated into monolayer rotating ball (MRB) display where optically anisotropic balls were disposed in a monolayer. A contrast ratio greater than 6 and a brightness of 20% in white state were obtained.

[14-2] 15:35

Importance of Simulation Studies in Analysis of Thin Film Transistors Based on New Class of Electronic Materials

D. Gupta, P. K. Nayak, J. Jang, C. Lee, and Y. Hong (Seoul Nat’l Univ., Korea)

This paper highlights the importance of two dimensional numerical simulation in thin film transistors based on new class of electronic materials, like organic semiconductors (here, pentacene) and metal oxides (here, Li-doped ZnO). The details of the simulation study that were applied to this class of materials in explaining the (a) device characteristics dependence on semiconductor thickness, (b) subthreshold characteristics and (c) environmental stability will be presented.

Room 306

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14. Flexible Display Application Ⅰ

[14-3] 15:55

-tive Display

H.-C. Park, J.-H. Oh, and Y.-S. Kim (Hongik Univ., Korea)

In this study, we investigated the processing issues involved in manufacturing interferometric type MEMS reflective displays. The issues include number of masks used, cracks in mechanical membrane, and uniformity of the device. The results demonstrated that the masks can be reduced significantly by using back-exposure process and the other issues can be

[14-4] 16:15

Fabrication of 4.3-inch HVGA Wrist Wearable AMOLED using a-Si TFT on STS Substrate

S.-J. Park, Y.-C. Kim, J.-M. Kim, S.-C. Byun, J. H. Park, J. S. Yoo, S.-Y. Yoon, C.-D. Kim, Y.-K. and Hwang, I.-J. Chung (LG Display Co., Ltd., Korea)

We have developed a wrist wearable AMOLED on stainless steel (STS) substrate. We used 0.6mm thick and one side polished STS as a substrate during TFT process. All processes were carried out belong 250°C and conventional a-Si:H TFT processes were used. An organic planarization layer was employed to obtain a high aperture ratio and the gate driver was integrated on substrate to obtain smaller bending radius. The resolution of the fabricated display is 4.3” HVGA (480xRGBx320,134 ppi). In order to improve the reliability of low temperature a-Si TFT, alternate negative data insertion (A-NDI) driving scheme was employed.

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15. LCTⅢ

- Chair: L. Komitov (Univ. of Gothenburg, Sweden)- Co-chair: C.-J. Yu (Hanyang Univ., Korea)

[15-1] 15:10

[Invited] Bistable LCD as Electronic Paper

C. Y. Lee, M. C. Tseng, and H. S. Kwok (The Hong Kong Univ. of Science and Tech., Hong Kong)

Several new nematic bistable liquid displays based on the nano-structured alignment surface have been demonstrated. They are bistable twisted nematic, bistable bend-splay and bistable bend twisted displays. The nano-structured alignment surfaces enable the generation of arbitrary pretilt angle and arbitrary anchoring energy. They are manufacturable in traditional STN LCD lines and do not require active active matrix.

[15-2] 15:35

[Invited] Techniques and Challenges for Reflective Display Applications - LCDs vs. E-Paper

K. Blankenbach (Pforzheim Univ., Germany)

Electrophoretic displays, which provide low power consumption and bright light readability, are enabling new products such as e-readers. However, there are a number of applications where liquid crystal (LC) displays remain competitive and, in this paper, reflective display technologies for various applications are examined. It is shown that bistable nematic and cholesteric LCDs exhibit superior performance for billboard and price tag display applications in particular

Room 307

41October 11-15, 2010

15. LCTⅢ

[15-3] 16:00

Switching of a Bistable TN Cell between -90° and 90° Twist States

D. H. Song, J. Ha Lee, J. C. Kim, T.-H. Yoon (Pusan Nat’l Univ., Korea), S. J. Lee, S.-I. Kim, S. Lim, and S. T. Shin (Samsung Electronics Co., Ltd., Korea)

We propose a bistable TN mode that has two stable states of +90° twist and –90° twist states. The proposed bistable mode

have the same elastic free energy. Switching between the -90° and +90° twist states can be performed by applying vertical and/

Room 307

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16. Special Properties and Applications of Phosphors

- Chair: R. -S. Liu (Nat’l Taiwan Univ., Taiwan)- Co-chair:K.-S. Sohn (Sunchon Nat'l Univ., Korea)

[16-1] 15:10

Effects of High Pressure Water Vapor Annealing on Photoluminescent and Structural Properties of Nano-Structured ZnO/ZnMgO Multiple Layers Prepared by Radio Frequency Magnetron Sputtering

C. Li, D. Wang, T. Kawaharamura, T. Matsuda, H. Furuta, T. Hiramatsu, M. Furuta, and T. Hirao (Kochi Univ., Japan)

ZnO/ZnMgO heterostructured films were fabricated on quartz glass substrate by radio frequency magnetron sputtering. The photoluminescent and structural properties of the films after annealing in a water vapor combing with a H2 reducing ambient at a low temperature were investigated. A widened

vapor post-treatment, companied with nano-rods formation. The

enhanced with the water vapor treatment.

[16-2] 15:30

Development of Quantum Efficiency Simulator for Phosphors and Its Application to Eu2+-doped SrS

H. Onuma, I. Yamashita, R. Nagumo, R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, and A. Miyamoto (Tohoku Univ., Japan)

Phosphor, a light emitting inorganic material, is an important for light emitting devices. Phosphors have been developed by trial-and-error methods. To assist the development of the Eu2+-doped phosphors, we developed a calculation method of

2+-doped SrS. The calculated efficiency dramatically depended on the presence of structural defects. To investigate the detail of this point, we also calculated excited energy distributions in phosphor crystals: structural defect created impurity level and it trapped excited electrons and holes.

Room 301

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16. Special Properties and Applications of Phosphors

[16-3] 15:50

Visible to Near Infrared Energy Transfer in BaGdB9O16

Doped with Eu3+ and Nd3+

H. Zhang and Y. Wang (Lanzhou Univ., China)

BaGdB9O16 : Eu3+, Nd3+ were prepared by the solid-state synthesis method and its photoluminescence in visible and near infrared region has been investigated. The effective energy transfer from visible to near infrared was demonstrated from Eu3+ to Nd3+ based on the luminescence spectra and decay lifetimes of BaGd0.99-xNdxB9O16 : 0.01Eu3+. According to

the proper mechanism was proposed to rationalize the quantum cutting process.

Room 301

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17. TFT Circuits Ⅱ

- Chair: K.-C. Park (Konkuk Univ., Korea)- Co-chair: W.-J. Nam (LG Display Co., Ltd., Korea)

[17-1] 15:10

[Awarded Paper - KIDS Award (Gold Prize, Sponsored by Samsung Electronics)]A Single Clock Driven Shift Register using P-type Low Temperature Polycrystalline Silicon Thin Film Transistors

K.-N. Kim, J.-S. Kang, S.-J. Ahn, O.-K. Kwon (Hanyang Univ., Korea), J. S. Lee, D. H. Lee, and C. W. Kim (Samsung Mobile Display Co., Ltd., Korea)

We proposed a novel shift register using p-type low temperature

employs only 1 clock signal and two reference voltages, VDD

and VSS. We eliminated clock skew problem without adding additional reference voltages because we used a single clock signal. The shift register was designed for the 3.31-inch WVGA

be applicable to the panel.

[17-2] 15:30

Highly Optimized Electrical Characteristics of a-Si TFT Gate Driver for Display Panel Manufacturing

I.-H. Lo, Y. Li, K.-F. Lee (Nat’l Chiao-Tung Univ., Taiwan), T. Chiang, K.-Y. Huang, and T.-H. Hsieh (Chimei-InnoLux Corp., Taiwan)

In this paper, we successfully optimize two gate driver circuits with amorphous silicon (a-Si:H) TFT to meet required electrical pecifications by unified optimization framework[1]. Then the sensitivity analysis is conducted to verify the performance variation with respect to the characteristics of optimized circuits. Finally, the optimized circuits are fabricated to implement the comparisons of measurement and simulation data.

Room 303

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17. TFT Circuits Ⅱ

[17-3] 15:50

The Integrated On-panel TFT Gate Driver with Low Driving Voltage

N. X. Huang, M. S. Shiau, H.-C. Wu, and D. G. Liu (Feng Chia Univ., Taiwan)

In this paper, a novel on-panel display gate driver is designed not only reducing the fluctuation noise of the output signal, but also diminishing the voltage stress effect of the dual pull-down transistors. This circuit consists of dual pull-down, anti-fluctuating, flash pull-down transistor and low driving voltage design. The degradation of threshold voltage of pull-down transistors is retarded because the control voltage of pull-down transistors is decreased in our design. The gate driver was

model.

[17-4] 16:10

A Scan Driver Compatible with Oxide TFTs Operating in Depletion-Mode

J. Pi, M. Oh, B. Kim, R. Tao, H. Leem, J. Kim, H. Oh, and K. Park (Konkuk Univ., Korea)

A new scan driver using oxide thin-film transistors (TFTs) is proposed. The proposed scan driver is compatible with depletion-mode operation that is the nature of most oxide TFTs. Two negative voltage levels are used for the clock signals to

According to the simulation results, the scan driver shows proper operation covering the VTrange of -5 V ~ +9 V.

Room 303

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18. OLED Materials

- Chair: W.-Y. So (UDC, USA)- Co-chair: B. D. Chin (Dankook Univ., Korea)

[18-1] 15:10

[Invited] Novel Transport Materials for High Performance Fluorescent and Phosphorescent OLEDs

E. Böhm, C. Pflumm, J. Kaiser, J. Kröber, F. Voges, H. Heil, A. Büsing, A. Parham, R. Fortte, T. Mujica-Fernaud, R. Anemian, and S. Leu (Merck KGaA, Germany)

In order to improve the performance in fluorescent blue and phosphorescent green OLED devices, Merck has developed novel phosphorescent green host and electron transporting materials. The newly eloped electron transporting material improves the external quantum efficiency of fluorescent blue devices up to 8.7% with excellent life time. In combination with newly developed host materials, the efficiency of green phosphorescent devices can be improved by a factor of 1.7 and the life time by a factor of 7.

[18-2] 15:35

[Invited] Non-Doped Solution-Processed Molecular Emitters for OLEDs

X.-H. Zhu (South China Univ. of Tech., China)

Solution-processable molecular semiconductors have been attracting growing interest as active materials in organic optoelectronic devices such as organic light-emitting diodes

organic solar cells (OSCs). They combine the advantages of solution-processability previously attributed to polymers and well-defined structures and high purity associated with small molecules.In this presentation we will describe our recent progress in the development of non-doped solution-processed molecular emitters for OLEDs, along with the work from other groups. The molecular designs and device integration will be mainly discussed.

Room 304

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18. OLED Materials

[18-3] 16:00

[Invited] New Blue Emitter and White OLED Device in Solution Process and Vacuum Process

Y. Park, B.-J. Kim, and J. Park (The Catholic Univ. of Korea, Korea)

The molecular design and synthesis as well as the device performance of three categorized novel organic molecules for

core structure containing an indenopyrazine moiety. One of the synthesized materials exhibits excellent color coordinates of (0.156, 0.088) and an external quantum efficiency of 7.18%,

emitters without doping. Furthermore, white OLED device was fabricated by using new blue materials in spin-coating.

[18-4]

Withdrawn

Room 304

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DisplaySearch Business Forum in IMID 2010 Overview

■Time: 09:00AM ~ 06:20PM

■Venue: KINTEX, Seoul, Korea (Conference Room #212, 213)

■Organizers: DisplaySearch / KIDS

■Sponsors:Platinum

Gold

■SummaryDisplaySearch Korea and KIDS will be hosting the DisplaySearch Business Forum in IMID 2010 on October 13, 2010 at KINTEX, Seoul, Korea. This year’s event will feature the presentation from DisplaySearch analysts, as well as the representative from the entire display supply chain, including equipment and materials suppliers, panel suppliers, display electronics manufacturers, OEMs, brands, distributors and retailers. Speakers will present on overall display market analysis and provide product strategy insights. The event will include overview and industry forecast for LCD Panels, and applications along with emerging technology trends such as LED, 3D, AMOLED, Smart TV and e-paper.

Room 212, 213

49October 11-15, 2010

DisplaySearch Business Forum in IMID 2010 Program

Start Topic Company / SpeakerKEYNOTE

09:00 AM FPD Industry Evolution and Revo-lution

DisplaySearchDavid Hsieh, Vice President

09:30 AM Market Drivers in LCD Industry LG DisplayYeongHa Jeong, Vice President

10:00 AM Advanced Mobile Display Solution Samsung Mobile DisplayChiWoo Kim, Vice President

10:40 AM Industry Trend of Flat Panel Dis-play Glass

Samsung Corning Precision MaterialsSinWoo Nam, Vice President

11:10 AMOverview on whole Flat Panel Display Industry value chain The way to be in the winners' circle

Deutsche BankYasuo Nakane, Director

11:40 AM US Holiday Outlook for 2010 NPDStephen Baker, Vice President

TV Market

1:00 PM Global TV market analysis, A Rule of Game

DisplaySearchKen Park, Senior Manager

1:25 PM Smart TV Outlook LG ElectronicsHyung-Jin Kim, General Manager

1:50 PMThe challenge and opportunity in TV Supply Chain - "The Rise of TV Outsourcing"

DisplaySearchDeborah Yang, Director

2:15 PM LCD TV Panel Market Trend DisplaySearchYoshio Tamura, Senior Vice President

Emerging Applications & Technologies

2:50 PM

Transforming The Display- "How Graphics, Video and Dis-play Acceleration is Revolutionis-ing Consumer Experiences?"

Imagination TechnologyJuYup Lee, Sales Director

3:15 PM AMOLED Technology Trends and Market Updates

DisplaySearchYS Chung, Director

3:40 PM

Emergence of e-readers and tablets- " Industry outlook and implica-tions to industry participants"

Iriver

4:05 PM

Touch screen, e-Paper and Flex-ible displays- "Emerging Technologies for High Growth"

DisplaySearchJennifer Colegrove, Director

4:30 PM 3D: A New Dimension for Growth DisplaySearchPaul Semenza, Senior Vice President

LED Industry

5:05 PM Development Trend of LED for TV Application

Samsung LEDJaeWook Kwon, Principle Engineer

5:30 PM Recent LED Patent Trends and Disputes in Korea YoungBae Lee, Patent Examiner

5:55 PM LED Industry Trend and LED Backlight Unit Technology Trends

DisplaySearchKevin Kwak, Director

Room 212, 213

50

19. Integrated AMD

- Chair: M. Kimura (Ryukoku Univ., Japan)- Co-chair: B. S. Bae (Hoseo Univ., Korea)

[19-1] 09:00

A New Pixel Circuit for Oxide TFT Based AMOLED Displays

C. K. Kang, S. M. Choi, Y. S. Park, B. Y. Chung, Y. G. Mo, B. H. Kim, and S. S. Kim (Samsung Mobile Display Co., Ltd., Korea)

A new pixel circuit for active-matrix organic lightemitting diode (AMOLED) displays based on amorphous oxide semiconductor thin film transistors (TFTs) is proposed. The circuit consists of four switching TFTs, one driving TFT, and two capacitors. Simulation results indicate that the proposed circuit shows better performance than conventional VTH compensation pixel circuits, especially when the VTH is egative. The circuit operation

[19-2] 09:20

AMOLED Pixel Circuit for High-Speed Operation

D.-W. Park, Y.-S. Park, C.-K. Kang, B. Chung, K.-H. Chung, B.-H. Kim, and S. S. Kim (Samsung Mobile Display Co., Ltd., Korea)

AMOLED pixel circuits for high-speed operation have been studied. To investigate the problems of high-speed operation, an experiment was conducted with a 14-inch qFHD AMOLED panel. By nalyzing conventional pixel circuits, an AMOLED pixel circuit is proposed for high frame rates such as 480 Hz, and its

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19. Integrated AMD

[19-3] 09:40

Low Power Consumption

M.-K. Baek, K.-E. Lee, S.-J. Lee, H.-H. Kim, J.-S. Yu, H.-S. Shin, I.-H. Song, J.-S. Choi, S.-W. Lee, M.-S. Yang, and Y.-K. Hwang (LG Display Co., Ltd., Korea)

We have developed a 3.7 inch VGA (480 x RGB x 640) panel with memory-in-pixel circuit using low temperature poly-Si technology for ultra low power consumption in stand-by mode. This memory circuit provided TFT LCD device with a simple panel layout for transflective display. We have achieved low power consumption of 1.35mW when LCD panel displays still image.

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20. Flexible Display Application Ⅱ

- Chair: S. Park (Chonbuk Nat'l Univ., Korea)- Co-chair: Y. Li (Univ. of Waterloo, Canada)

[20-1] 09:00

[Invited] The Technical Challenge of Flexible Display on New Business Application

C.-D. Kim, S.-Y. Yoon, J.-S. Yoo, and Y.-K. Hwang (LG Display Co., Ltd., Korea)

With an increasing need for a flexible display as a new form factor display which has large screen and low weight with small package, recent approach on flexible displays made electrophoretic display and OLED attractive in replacing existing

[20-2] 09:25

[Invited] Thin and Light Weight Flexible Electronic Paper Display using QR-LPD™ Technology

R. Hattori (Kyushu Univ., Japan), R. Sakurai, N. Nihei, and Y. Masuda (Bridgestone Corp., Japan)

We have developed thin and light weight flexible electronic paper display using QR-LPD technology. Novel types of thin and

technology can realize the “real paper like” flexible electronic paper in combination with a plastic substrate QR-LPD fabricated by roll-to-roll process.

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20. Flexible Display Application Ⅱ

[20-3] 09:50

Electrical and Optical Properties of IZO-Ag-IZO Multilayer Electrode by Ag Deposition Rate and Thickness for Organic Light Emitting Diode

M. Kim, J. Lee, K. Lee, J. Kim, C. Yoo, S. Yoon, C. Kim, Y. Hwang (LG display Co., Ltd., Korea), and H.-K. Kim (Kyung Hee Univ., Korea)

We investigated the influence of the Ag deposition rate and thickness on the indium zinc oxide (IZO)-Ag-IZO multilayer

that the Ag deposition rate is a remarkably tunable factor to affect the electrical and optical characteristics of the IZO-Ag-IZO multilayer electrode. And then it will be shown that the comparison of OLED performances of the characteristics of the IZO-Ag-IZO multilayer anode and IZO single layer anode by fabricating inverted green color OLED.

[20-4] 10:10

[Invited] Unconventional Materials and Processes for Printed Optoelectronics

A. Facchetti (Northwestern Univ., USA)

In this presentation, synthetic and fabrication approaches to new organic, inorganic, and hybrid materials for unconventional optoelectronic applications are presented. The covered issues are: 1. Synthesis of new high-mobility n-type organic semiconductors. 2. Development of solution processes for thin-

of new donor polymer for organic photovoltaic applications. These materials are used to fabricate high-performance printed thin film transistors with carrier mobilities > 2 cm2/Vs, CMOS circuits with unprecedented gains, and displays. Organic photovoltaic cells with certified efficiencies > 7.4% were also realized.

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21. LCTⅣ

- Chair: M. Kimura (Nagaoka Univ. of Tech., Japan)- Co-chair: E.-J. Choi (Kumoh Nat’l Inst. of Tech., Korea)

[21-1] 09:00

[Invited] Development of Liquid Crystal Mixtures for AM-LCD

T. Aono (Chisso Petrochemical Corp., Japan) and Y. Gotoh (Chisso Corp., Japan)

Improvements in display properties, productivity, and cost performance achieved for liquid crystal displays (LCDs) in recent years are remarkable. One of the factors enabling these feats is the enhancement of liquid crystal material properties. This paper introduces the direction of Chisso’s LC material development to keep pace with the LCD technologies that are still advancing.

[21-2] 09:25

[Invited] Patterned Retarder Films using Reactive Mesogen Technology

R. Harding, H.-J. Yoon (Merck Advanced Technologies Ltd., Korea), O. Parri, I. Gardiner, G. Smith, J. Sargent, and K. Skjonnemand (Merck Chemicals Ltd., UK)

Merck has developed a range of reactive liquid crystal (so called, Reactive Mesogen) mixtures that are ideally suited for the fabrication of patterned retarder films. Such films are currently employed to create 3D displays. Different methods of patterning Reactive Mesogen Mixtures are discussed and the merits of each considered. Finally, next generation materials, with improved wavelength dispersion, are introduced with a

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55October 11-15, 2010

21. LCTⅣ

[21-3] 09:50

Fast Response TN-LCDs using Ultra Short Pitch LC Materials (USP TN-LCDs)

K. Takatoh, M. Akimoto, K. Shinohara, Y. Nakamura, and S. Kobayashi (Tokyo Univ. of Science, Japan)

The authors succeeded in reducing 70% of TN-LCD decay time by using the ultra short pitch LC materials which forms STN mode at conventional conditions. It was found that TN molecular arrangement can be formed by applying electric voltage to STN mode under certain condition and the obtained TN mode can be maintained for the period depending on the pretilt angle magnitude. The TN mode can be stabilized by the photo polymerization process, which can also shorten the decay time. The response time reduction was also effective at -20 degree.

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22. Design and Synthesis of LED Phosphors

- Chair: H. Yang (Hongik Univ., Korea)- Co-chair: T.-M. Chen (Nat’l Chiao Tung Univ., Taiwan)

[22-1] 09:00

[Invited] Design of Phosphors for White Light LED by Using Energy Transfer Principle

T.-M. Chen, C.-H. Huang, and W.-J. Yang (Nat’l Chiao Tung Univ., Taiwan)

The Eu 2+ to Mn 2+energy t rans fer p rocess has been studied in a series of single-composition pre-designed Ca9La(PO4)7:Eu2+,Mn2+ (CLP:Eu2+,Mn2+) phosphors. Through an effective resonance-type dipole-quadrupole energy transfer, the CLP:Eu2+,Mn2+ phosphors exhibit a systematically varied hues from green, yellow and eventually to red, with the emission intensity tunable by adjusting the content of Mn2+, respectively. A warm white light emitting diode (WLED) with superior color-rendering index and low correlated color temperature was fabricated by combining a 365 nm UV-InGaN chip and a phosphor blend of yellow-emitting (Ca0.98Eu0.005Mn0.015)9La(PO4)7

and blue-emitting BaMgAl10O17:Eu2+.

[22-2] 09:25

[Invited] Nanostructure Materials for FED and White LED Application

Z. Sun,T. Feng, Z. Zhang, H. Li, L. Pan, Y. Chen, X. Chen, H. Ding, X. Wang, and T. Lu (East China Normal Univ., China)

The new generation of flat panel displays and lightings, such as field emission display (FED) and light emitting diode (LED) have been attracting considerable attentions both from scientists and engineers. With development of the advanced nanostructure materials including carbon nanotubes (CNTs), graphene, diamond, phosphor, metal and composites, the devices performance is improved greatly by using the materials.

conductivity of CNTs, graphene, Ag nanowire, high thermal conductivity of diamond and Ag nanowire, high efficiency nitride phosphors, nano metal oxide composites, and related applications in FED and white LED devices are reviewed.

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22. Design and Synthesis of LED Phosphors

[22-3] 09:50

[Invited] Synthesis of High Performance Phosphors by Advanced Solution Methods

M. Kakihana (Tohoku Univ., Japan) and V. Petrykin (J. Heyrovsky Inst. of Physical Chemistry, Czech Republic)

We developed a panel of innovative solution-based approaches

variation of the parallel solution based synthesis combined with

for search of both new materials and unexpected composites

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23. Human Factor

- Chair: M.-C. Park (KIST, Korea)- Co-chair: J.-H. Park (Chungbuk Nat’l Univ., Korea)

[23-1] 09:00

[Invited] Visual Fatigue from Stereoscopic Video

K. Sohn (Yonsei Univ., Korea)

In this paper, we investigate various factors that are related to visual fatigue caused by stereoscopic images. In addition, we provide two visual fatigue prediction metrics for stereoscopic images and 2D-puls-depth video. The first metric detects impairments caused by inappropriate shooting parameters and camera misalignment from corresponding points of stereoscopic image. The next metric analyzes depth and motion characteristics for 2D-plus-depth video. The results can be applied to visual comfort enhancement.

[23-2] 09:25

[Invited] Analysis on the Motion Blur of Stereoscopic 3D Images with Lateral Movements and its Effect on Accommodation-Convergence Mismatch

H.-J. Choi (Sejong Univ., Korea)

In this paper, the motion blur of 3D image with lateral movement is analyzed. The real and the virtual 3D images have different conditions of motion blur. The motion blur is also expected to affect the amount of accommodation-convergence mismatch by reducing the contrast and spatial resolution of the 3D images.

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23. Human Factor

[23-3] 09:50

Ergonomic Evaluation of Visual Artifacts in Stereoscopic Display Devices

S. Kim, J. Yoshitake, T. Kawai, O. Yamada (Waseda Univ., Japan), and A. Iguchi (Astrodesign Inc., Japan)

two methods: the time-multiplexing and the spatial-multiplexing methods. While viewing the former during smooth pursuit and saccadic eye movements, an observer perceives artifacts: flicker, pseudo-parallax, a phantom array. While viewing the later, an observer perceives artifacts: pseudo-parallax, binocular rivalry, low-resolution. These artifacts would affect the observer’s safe and comfort of viewing. In this study, visual artifacts when viewing 3D displays were examined with physiological changes, including depth sensation and the subjective symptoms of visual fatigue.

[23-4] 10:10

Stereo Zooming Effects by the Switchable Stereo Camera Alignments

K.-H. Lee (Konkuk Univ., Korea) and S.-K. Kim (KIST, Korea)

In stereoscopy, we propose a method to control the stereo depth sense by the switchable stereo camera alignments. A diverging type of the alignment makes the effect as zoomed in the depth sense, a converging type makes zoomed out respectively. Despite of limitation of fusible stereo area due to the alignment selected, the validation of the method at the object area interest

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24. Phosphorescent OLED

- Chair: F. So (Univ. of Florida, USA)- Co-chair: B. D. Chin (Dannkook Univ., Korea)

[24-1] 09:00

[Invited] Progress in Solution Processible Phosphorescent Organic Light Emitting Diodes (PHOLEDs)

K. O. Cheon, S. Xia, J. Brooks, S. Mohan, M. Rothman, P. Hett, R. Kwong, M. Inbasekaran, and J. J. Brown (Universal Display Corp., USA)

Solution processible phosphorescent organic light emitting devices (P2OLEDs) are attracting a lot of attention for application to displays and lighting. We report significant progress in closing the gap between high performance evaporated PHOLED and P2OLED. Also, we demonstrate that inkjet printed green P2OLED performance can match performance level of spin coated green P2OLED.

[24-2] 09:25

Blue Phosphorescent OLEDs

J. H. Yu, W. S. Jeon, J. S. Park, R. Pode, and J. H. Kwon (Kyung Hee Univ., Korea)

We present simple p-i-n structures with single-emitting and mixed emitting layers for highly efficient phosphorescent blue organic devices. Using high triplet energy hole and electron transporting materials, the p-i-n structure has been realized by doping of MoO3 as a p-dopant and Cs2CO3 as a n-dopant. A very low onset voltage value of 3.0 V and driving voltage of 4.0 V are achieved in this p-i-n device configuration. Maximum external

lm/W are reported.

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24. Phosphorescent OLED

[24-3] 09:45

High Efficiency Deep Blue Phosphorescent Organic Light Emitting Diodes using a Bipolar Host Material

K. S. Yook, S. O. Jeon, and J. Y. Lee (Dankook Univ., Korea)

diodes(PHOLEDs) were developed using a bipolar host material with a phenylcarbazole and a diphenylphosphine oxide. The devices performances of the blue PHOLEDs with the bipolar host material were investigated by changing the HTL and ETL structure. Optimized blue device showed a high quantum

now.

[24-4] 10:05

Prediction Way of Guest Doping Concentration in Phos-phorescent OLEDs

W. S. Jeon, J. S. Park, J. H. Yu, M. C. Suh, and J. H. Kwon (Kyung Hee Univ., Korea)

We report methodology for prediction of an ideal doping concentration by the simple molecular size calculation in phosphorescent OLEDs. Two different host materials, CBP and Bepp2, are investigated as model compounds. The ideal doping concentration of CBP and Bepp2 hosts with Ir(ppy)3 guest system is predicted to be ~1.0% and ~1.5%, respectively. Those conditions are observed at emitting layer thickness of 10nm for CBP and 20nm for Bepp2 due to trapping nature of the hole carriers at guest molecules. Maximum EQE value of 20.7% was obtained at the calculated ideal doping concentration condition (1.5%) from Bepp2 host with Ir(ppy)3 guest system.

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25. Oxide TFT Ⅱ

- Chair: K. Nomura (Tokyo Inst. of Tech., Japan)- Co-chair: J.-S. Park (Dankook Univ., Korea)

[25-1] 10:40

Annealing Effects on the Transparent Zinc Tin Oxide Thin Film Transistor and Circuit Applications

M. S. Oh, Y. H. Kim, S. J. Oh, and Y. K. Kyung (KETI, Korea)

We report about the annealing effects on the characteristics of Zinc Tin Oxide (ZTO) thin film transistors (TFTs) and the circuit applications. To improve the properties of devices, we annealed the devices using various sequences. Here, we could improve the characteristics of ZTO TFTs and inverters using these simple and adequate annealing processes. When we annealed the device after source/drain electrode deposition, the subthreshold swing was improved and threshold voltage shifted to the positive direction compared with the device annealed before electrode deposition. So we could control the properties of devices by simple annealing process and enhance the static characteristics of inverter devices.

[25-2] 11:00

[Awarded Paper - Award of Minister of Education, Sci-ence and Technology (Excellence Award)]Negative Bias Enhanced Photo Instability of Top gate IGZO TFT

S.-H. Ko Park, M. Ryu, K. Kim, S. Yang, C.-S. Hwang, C. Byun, S. M. Yoon, and H. Oh (ETRI, Korea)

We have investigated the effect of active layer thickness in top gate IGZO TFT on the negative bias enhanced photo instability. While the negative bias stability of top gate IGZO TFT was not affected by the active layer thickness in the dark, negative Vth

shift is increased with the increase of the active layer thickness under visible white light illumination during negative bias stress. We attributed this much increased negative Vth shift to the increase of shallow donor as well as the increased positive charge trapping in the gate insulator.

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25. Oxide TFT Ⅱ

[25-3] 11:20

Effective Channel Length and Mobility of a-IGZO TFT

K. Im, M.-G. Kim, H. Yang, H. Park, C. G. Choi Y. G. Mo, and H. D. Kim (Samsung Mobile Display Co., Ltd., Korea)

We extracted the effective channel length in In-Ga-Zn oxide (a-IGZO) inverted staggered etch-stop (ES) TFTs. Strong electron accumulation existed under source/drain extensions over the ES-layer (ESL)/a-IGZO stack. As a result, the effective channel length was shorter than the inter-contact distance and was determined by the distance between source and drain metal patterns over ESL/active.

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26. E-Paper Application

- Chair: D. Jin (Samgsung Mobile Display Co., Ltd., Korea)- Co-chair: J.-S. Yeo (Hewlett-Packard Co., USA)

[26-1] 10:40

[Invited] Flexible Electronic Paper Driven by Transparent Amorphous Oxide Semiconductors

M. Ito, C. Miyazaki, N. Ikeda, K. Murata, Y. Harada, and M. Ishizaki (Toppan Printing Co., Ltd., Japan)

We review the application of transparent amorphous oxide semiconductor (TAOS) thin film transistor (TFT) to electronic paper. Flexible VGA 150ppi-resolution electronic paper was successfully driven by TAOS TFT array fabricated at 150 ºC. Moreover, we demonstrate 2 inch electronic paper by solution processed TAOS TFT. Solution-processed TAOS was annealed at 270 ºC for 5 minutes which is rather lower process temperature than the reported values. We see a big potential for

[26-2] 11:05

Photo-Colorization of Single Substrate Flexible ChLC Display

C.-C. Liang, S.-C. Chen, H.-Y. Chen , H.-K. Lin, W.-Y. Lee, and J.-Y. Su (ITRI, Taiwan)

This paper proposes a new photo-colorization method. By adding photo-sensitive material to cholesteric liquid- crystal layer, single substrate flexible ChLCD becomes sensitive to UV light. Therefore, UV exposure can cause the discontinuous change in the helical pitch of the ChLC pixels, locally change the reflective wavelength, and correspondingly colorize the ChLC Display. In this paper, area-color and multi-color ChLC displays are both introduced and implemented.

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26. E-Paper Application

[26-3] 11:25

Printed Black Internal Conducting Electrodes for Flexible Bistable Cholesteric Displays

H. M. Atkuri, D.-W. Lee, J. L. West (Kent State Univ., USA), B.-O. Choi, and C.-H. Kim (KIMM, Korea)

We report flexible, bistable cholesteric displays utilizing PET substrates with printed internal black electrodes. The black electrodes consist of carbon ink dispersed in butyl carbitol using a patented roll-to-roll gravure-offset printing (Fig 1). A transparent conducting polymer printed on PET served as the counter electrode. The electro-optic material is a chiral nematic mixture dispersed in a low concentration polymer binder. The

(vibrant green) states upon application of an electric pulse. The internal black electrode enhances the contrast of the display

[26-4] 11:45

Organic Thin Film Transistors with Low Cost Source/Drain Electrodes for Electrophoretic Display

J. E. Lee, M. J. Kim, C. B. Park, J. Kim, K.-S. Park, C. D. Kim, Y. Hwang (LG Display Co., Ltd., Korea)

electrode for electrophoretic display was fabricated. Anthracene derivative was used for spin-coated organic semiconductor (OSC). The OTFT with Cu source/drain electrode exhibited the

2/V sec with on-off current ratio of ~104. The device performance is suitable for electrophoretic display.

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27. LCTⅤ

- Chair: H. Kikuchi (Kyushu Univ., Japan)- Co-chair: S.-W. Kang (Chonbuk Nat’l Univ., Korea)

[27-1] 10:40

[Invited] The Progress of Rubbing and Non-Rubbing Techniques

M. Kimura, Y. Kuramoto, Y. Inoue, and H. Sato (Nagaoka Univ. of Tech., Japan)

The expulsion of the rubbing method from the industrial manufacturing process has not been completed yet. On the contrary, the rubbing method has evolved quite well by exploring the function of rubbing and improving the rubbing cloth. The recent topics with regard to the rubbing method are reviewed. Especially brand-new rubbing cloths made by silket cotton or polyester-nylon are introduced. As a rival candidate against the rubbing method, a novel molecular alignment technique based on the printing method is also demonstrated.

[27-2] 11:05

Novel Surface-Stabilized Vertical Alignment Mode for High Transmittance and Fast Response

J. H. Lee, K. Oh, S. G. Kim, T. Kim, S. W. Nam, K. H Park, K.-H. Kim, and W. Lee (Samsung Electronics Co., Ltd., Korea)

Novel vert ical a l ignment mode is presented for high transmittance and fast response in the LCD panel. The key concept of the new mode is that the pre-tilt for fast response and multi-domain is generated in the surface of alignment layer composed of vertical alignment part and photo-reactive moiety. The UV treatment of the new alignment layer under applied voltage provides fast control of liquid crystal texture, high transmittance, and enhanced reliability in liquid crystal display.

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27. LCTⅤ

[27-3] 11:25

[Awarded Paper - Award of Minister of Education, Sci-ence and Technology (Excellence Award)]Vertical Alignment of Liquid Crystals by Ordering Effect of Self-Assembled Monolayers on the Ion-beam-Irradiated Anisotropic Surface

J.-S. Park, K.-Y. Seok, H.-R. Kim (Kyungpook Nat’l Univ., Korea), S.-W. Hwang, J.-C. Kim, T.-H. Yoon (Pusan Nat’l Univ., Korea), and J.-H. Kim (Hanyang Univ., Korea)

We investigated a vertical alignment method of liquid crystals (LCs) by using self-assembled monolayers (SAM) prepared on an anisotropic surface, which was produced by oblique ion beam irradiations or by a mechanical rubbing. The LC alignment effects, depending on the alkyl chain length of the SAMs as well as the surface anisotropic conditions, were checked. By using the methods, multi-domain VA alignment effects were also observed.

[27-4] 11:45

[Invited] Fast Switching Surface-Polymer-Assisted Vertically Aligned Nematic Displays

J.-Y. Hwang, V. Borshch, and L.-C. Chien (Kent State Univ., USA)

We demonstrate fast switching surface-polymer-assisted vertically aligned (SPA-VA) liquid crystal displays (LCDs).The formation of polymer nano spikes at the both substrate surfaces as the alignment layers is achieved by liquid crystal(LC) directed polymerization of a small amount of a reactive monomer in vertically aligned liquid crystal. At appropriateconcentration, the phase-separated polymer and facilitate formed nano-sized spikes. These polymer nano-spikes act as internal surface alignment layers and enable the fast switching

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28. Recent Progress in LED Phosphors

- Chair: H. Yang (Hongik Univ., Korea)- Co-chair: M. Kakihana (Tohoku Univ., Japan)

[28-1] 10:40

[Invited] Investigation of Phosphors for Light-Emitting Diodes (LEDs) by Combinatorial Chemistry Method

R-S. Liu, L. Chen (Nat’l Taiwan Univ., Taiwan), and T.-S. Chan (Nat’l Synchrotron Radiation Research Center, Taiwan)

A combinatorial chemistry method has been applied to search

for (Y2-xEuxBiy)O3 system, the optima composition (x = 0.16-0.18, 1-x-y)

PO4:Tb3+x,Eu2+

y system, two optima compositions were obtained to be KSr0.93PO4:Tb3+

0.07(green) and KSr0.995PO4:Eu2+0.005 (blue).

[28-2] 11:05

Parallel Solution-Based Synthesis Approach for Search of Eu2+-activated MAlSixOy with M=Li, Na and K

J. Kim, S. Tezuka, H. Kato, and M. Kakihana (Tohoku Univ., Japan)

In the search for new phosphors among Eu2+-activated compounds wi th var ious composi t ions descr ibed as MAlSixOy:Eu2+(M=Li, Na, K), a parallel solution-based synthesis approach was applied to select candidates as potential phosphors for white LED systems. Among them, sodium aluminosilicates with x=0.5 and 1 exhibited emission bands in the wavelength range of 400-700 nm with peak centers at 473 nm for x=0.5 and at 553 nm for x=1 with the corresponding excitation maxima at 290 and 320 nm, respectively.

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28. Recent Progress in LED Phosphors

[28-3] 11:25

Synthesis of Highly Luminescent InP/ZnS Quantum Dots and Fabrication of White Light-Emitting Diodes

D. S. Jang, B. H. Kwon, H. K. Kim, and D. Y. Jeon (KAIST, Korea)

Monodisperse InP nanocrysta ls were prepared wi th solvothermal method followed by size-selective precipitation. The luminescent properties were improved after coating the InP core with ZnS shell in a facile heating- up method. An alternation in the sequence of size-selective precipitation step and ZnS coating step rendered InP/ZnS core/shell quantum dots with higher fluorescence quantum yield (22~63%). The quantum dots embedded in a polymer matrix were incorporated on blue light-emitting diodes as the light converter to fabricate white light-emitting diodes (W-LEDs).

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29. 3D Image Processing

- Chair: H. Ikeoka (Tokyo Univ. of Science, Japan)- Co-chair: H. Kim (Korea Univ., Korea)

[29-1] 10:40

[Invited] Passive Image Sensing and Processing for Real-Time Depth Estimation

H. Ikeoka and T. Hamamoto (Tokyo Univ. of Science, Japan)

The passive depth estimation techniques that are easy to use with a single camera, for use in such as automobiles and for robotics tasks are needed. However, the relation between real-time processing and wide detectable range is contradictory. Whereat, various methods are proposed to solve the problem; e.g. using high speed mechanism. Also, we have proposed a method by estimating sharpness curves that are obtained from a tilted optics imaging. The feature of our proposed method is not using any mechanical structures, and is suitable for image processing, because amount of light is not reduced by using a few multiple images only.

[29-2] 11:05

[Invited] Fast View Synthesis for 3D Display

J. Choi, J.-I. Park (Hanyang Univ., Korea), and H.-C. Shin (ETRI, Korea)

As 3D contents are getting popular, dealing with excessively huge size of 3D contents is emerging as a critical problem in data transmission and execution. Synthesizing virtual view-point images is a key technique for alleviating this problem of 3D contents. In this paper, we propose a fast image-based view synthesis for 3D display with GPGPU. The performance of the proposed algorithm is verified by comparing its computational time with one on CPU.

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29. 3D Image Processing

[29-3] 11:30

Reduction of Quantization Error in Depth Extraction Based on Integral Imaging using Genetic Algorithm

I. Chung, J.-H. Jung, J. Hong, K. Hong and B. Lee (Seoul Nat’l Univ., Korea)

A novel depth extraction scheme in 3D integral imaging based on a genetic algorithm (GA) with sub-pixel resolution is presented to reduce the quantization error. By using GA, more detailed disparity information is obtained with sub-pixel unit shift.

[29-4] 11:50

Simple Compensation Technqiue of Eye Position Tracking for Glasses-Free 3D Multiview Display System

C. Lee and Y.-M. Kwon (KIST, Korea)

In our research, we intended to compensate eye position tracking data(x-axis, y-axis) error for providing accurate eye position data to 3D display system. As these position data, 3D system can provide appropriate 3D contents and more effective user interaction. In this paper, we discuss about what problem occur when eye tracking system track eye position, how to solve these problems and next our plan.

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30. White OLED

- Chair: X. Zhu (South China Univ. of Tech., China)- Co-chair: J. H. Kwon (Kyung Hee Univ., Korea)

[30-1] 10:40

[Invited] White Phosphorescent OLED Lighting: A Green Technology

M. S. Weaver, P. A. Levermore, V. Adamovich, K. Rajan, C. Lin, G. Kottas, S. Xia, R. Ma, R. C. Kwong, M. Hack, and J. J. Brown (Universal Display Corp., USA)

A 15 cm x 15 cm white PHOLED lighting panel with 50 lm/W

cd/m2 is presented. The panel uses a simple device stack with

maintain an attractive thin form factor. We also present a white

and LT70 10,000 hrs. A highly stable light blue phosphorescent

and demonstrate exceptional color stability with aging.

[30-2] 11:05

[Invited]Microcavity Blue Phosphorescent OLEDs with Down-Conversion Phosphors

J. Lee and F. So (Univ., of Florida, USA)

There are several approaches to generate white light from organic light emitting diodes (OLEDs). One approach is to use blue emitting OLEDs in conjunction with down-conversion phosphors. This approach requires highly efficient saturated blue emitters to provide efficient excitation for the phosphors. For blue phosphorescent emitters such as FIrpic, the emission spectrum contains too much green light and it does not excite

for the down-conversion phosphors, we incorporated the

of 41 lm/W. With down-conversion phosphors incorporated in

of 99 lm/W for the resulting white emitting device with a color rendering index (CRI) of 83 was achieved.

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30. White OLED

[30-3] 11:30

Light Emitting Diodes

H. Lee, J. Kwak, C. Lee, I. Park, S. Noh, and D. Y. Yoon (Seoul Nat’l Univ., Korea)

We fabricated highly efficient inverted bottom-emission white organic light emitting diodes (OLEDs) using the zinc oxide (ZnO) nanoparticles (NPs) as an electron injection layer (EIL).

of 7.8 % and 14.1 cd/A, about two times higher than the device without the ZnO NPs layer. The CIE color coordinates of the device with the ZnO NPs are (0.3927, 0.4416).

[30-4] 11:50

Organic Light-Emitting Diodes with Electron Transport Material Mixed into Emitting Layer

F.-S. Juang, S.-H. Wang, T.-C. Liao, Y.-S. Tsai, B.-S. Hsieh, Y.-Y. Ho (Nat'l Formosa Univ., Taiwan), Y. Chi (Nat'l Tsing Hua Univ., Taiwan), H.-P. Shieh (Nat'l Chiao Tung Univ., Taiwan), J.-S. Hsu (Chung-Shan Inst. of Science & Tech., Taiwan)

This paper presents the white phosphorescence organic light-emitting diode (PHOLED) composed of three color emitters. In order to obtain the high-efficiency white PHOLED, a green phosphor dopant was used to increase the brightness and reduced driving voltage. The hole transport-type host (TCTA) and electron transport layer (TmPyPB) were co-doped as a mixed host structure to form a broader recombination zone, and confine carriers and ecxitons within emitting layer. From the experimental results, the optimization structure of white

W at 1000 cd/m2) and a low driving voltage of 4.5V.

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31. Oxide TFT Ⅲ

- Chair: M. Furuta (Kochi Univ. of Tech., Japan)- Co-chair: J. K. Jeong (Inha Univ., Korea)

[31-1] 13:30

[Invited] How We Can Improve Characteristics and Stability of a-In-Ga-Zn-O Based TFTs

K. Nomura, T. Kamiya, and H. Hosono (Tokyo Inst. of Tech., Japan)

Amorphous In-Ga-Zn-O (a-IGZO) TFTs are highly expected as a driving/switching TFT for large-area and/or flexible FPDs. In this paper, we present the improvement of TFT characteristics and stability by post thermal annealing under strong oxidation environments. We also discuss TFT instability under constant current stress from channel quality and thickness dependences.

[31-2] 13:55

Role of Film Properties in Sub-Threshold Characteristics of Zinc Oxide Thin-Film Transistors (ZnO TFTs)

Y. Kamada, S. Fujita (Kyoto Univ., Japan), T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao (Kochi Univ. of Tech., Japan)

The effect of oxygen partial pressure p(O2) during ZnO deposition on film properties and electrical properties of ZnO TFT were investigated. Crystallinity of the ZnO films became better as the p(O2) decreased; however, defects in deep energy were increased. The ZnO TFTs whose channel was deposited at low p(O2) showed hump characteristics in a subthreshold region.

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31. Oxide TFT Ⅲ

[31-3] 14:15

Highly Stable IGZO TFT Performances with Inorganic Etch Stopper Layer for Diverse Electronic Displays

C. W. Kim, J.-S. Heo, J. Kim, K.-S. Park, C.-D. Kim, Y. K. Hwang, I.-J. Chung (LG Display Co., Ltd., Korea), S. T. Meyers, and A. Grenville (Inpria Corp., USA)

In this work, we introduce a highly stable solution processed oxide TFT for high performance display.IGZO and Hf-based oxide were used as semiconductor layer and dielectric layer, respectively and deposited by a spin coating under 350℃ process. We applied SiO2 etch stopper layer (ESL). This oxide TFT with SiO2 ESL shows good mobility of 2.06 cm2/VsIon/off =1.0x109 and highly enhanced stability against the gate bias stress.

[31-4] 14:35

Photon-Enhanced Bias Instability of InGaZnO TFT with Dual Gate Structure

M. Ryu, S.-H. Ko Park, C.-S. Hwang, S. M. Yoon, C. Byun, B. Kim, O.-S. Kwon, E.-S. Park, S. Yang, H. Oh, K. Kim, and K. I. Cho (ETRI, Korea)

We have fabricated dual gate IGZO TFT to investigate the photo-enhanced bias instability of IGZO TFT. Contrary to the single gate device in a bottom gate and top gate structure, the dual mode device showed less Vth shift under the visible white light illumination with negative bias stress. We attributed this less negative Vth shift to the reduced hole or positive charged species trapping at the interface due to the reduced effective

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32. OTFT

- Chair: J. B. Koo (ETRI, Korea)- Co-chair: H.-J. Kim (Phicot Inc., USA)

[32-1] 13:30

[Invited] High Mobility, Low Temperature Processed P-type Polymer Semiconductors for Printed Organic Thin Film Transistors

Y. Li (Univ. of Waterloo, Canada)

cost effective fabrication using solution deposition techniques under mild conditions for applications where light weight, large area, and flexibility are required. This presentation reviews our recent results in the design and development of p-type polymer semiconductors as channel materials for OTFTs. High performance p-type polymers with charge carrier mobility of ~1 cm2V-1s-1 have been achieved in our group, which are suitable for high throughput, roll-to-roll, mass production of printed organic electronics.

[32-2] 13:55

[Invited] Low-Voltage Organic Transistors and Circuits for Flexible Displays

H. Klauk (Max Planck Inst. for Solid State Research, Germany)

Organic thin-film transistors (TFTs) are often fabricated with relatively thick gate dielectrics, and thus usually require fairly large operating voltages (>10 V). To allow organic TFTs to operate with voltages compatible with high-efficiency organic light-emitting diodes (~3 V), we have developed an ultra-thin, high-capacitance gate dielectric based on an organic self-assembled monolayer, which allows organic p-channel and n-channel TFTs to operate with voltages of ~3 V. Low-voltage, low-power complementary circuits based on these TFTs have signal propagation delays of less then 100 μsec per stage.

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32. OTFT

[32-3] 14:20

[Awarded Paper - Award of Minister of Education, Sci-ence and Technology (Excellence Award)]

J.-S. Yeo, J. Mabeck, G. Combs, V. Korthuis, R. Hoffman, B. Benson, T. Koch (Hewlett-Packard Co., USA), Z.-L. Zhou, and D. Henze (Hewlett-Packard Lab., USA)

A novel architecture and proprietary electronic inks have been developed to provide disruptive digital media solutions based on an electrokinetic technology platform. The flexible reflective electronic media (eMedia) has been fabricated by imprinting three-dimensional microscale structures with a roll-to-roll manufacturing platform. HP’s technologies enable the required attributes for eMedia such as low power, transparency, print-quality color, continuous levels of grey, and scalability at low cost. We have also demonstrated pixelation by integrating with prototype oxide thin film transistor (TFT) backplane. The innovations described in this paper are currently being developed further for eSkins, eSignage, and ePaper applications.

[32-4] 14:40

Ink-Jet Printed Organic Single-Crystal Transistors

Y.-H. Kim, M. S. Oh (KETI, Korea), M.-K. Han (Seoul Nat’l Univ., Korea), and S. K. Park (Chonbuk Nat’l Univ., Korea)

6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene-based high performance organic single crystal transistors were fabricated by using ink-jet printing. Direct printed organic single crystals were obtained using controlled volume density of dropped ink onto limited wetting area and mixed solvent system. The ink-jet

mobility of as high as 0.5 cm2/V·s with and subthreshold slope of as steep as 0.5 V/dec.

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33. LCTⅥ

- Chair: R. Harding (Merck Advanced Technologies Ltd., Germany)- Co-chair: S.-W. Choi (Kyung Hee Univ., Korea)

[33-1] 13:30

[Invited] Liquid Crystalline Blue Phases for Electro-Optical Devices

H. Kikuchi, S. Shibayama, H. Choi, H. Higuchi (Kyushu Univ., Japan), Y. Haseba, and S.-I. Yamamoto (Chisso Petrochemical Co., Ltd., Japan)

induced color shift of the dendritic molecule-stabilized liquid crystalline blue phases. The electro-optical Kerr effect of the optically isotropic liquid crystal composites, which require no surface treatment for device fabrication are also presented. Anomalously large Kerr constant, more than 10-8 mV-2 and fast response, less than sub-milli-second are observed at a room temperature.

[33-2] 13:55

[Invited] Novel LC Materials for 3D Applications

M. Wittek, H. Hirschmann, B. Rieger, K. Tarumi, V. Reiffenrath, D. Pauluth (Merck KGaA, Germany), and S.-E. Lee (Merck Advanced Technologies, Korea)

This presentation describes new LC materials for 3D applications. The first part focuses on novel LC materials to improve switching time in conventional LC displays. Improved switching time is needed in 120Hz+ driven displays to minimize perceived crosstalk in stereoscopic mode when viewed with shutter-type glasses. In the second part new materials for dedicated 3D applications such as 2D/3D switchable LC lenses for autostereoscopic displays are presented.

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33. LCTⅥ

[33-3] 14:20

LCDs using Internal Nano Wire Grid Polarizer

H. Cui, T. C. Chung, T.-S. Jen (Infovision Optoelectronics Crop., China), W. Hu, X. Lin, Y.-Q. Lu (Nanjing Univ., China), and Z. Ye (Shanghai Jiao Tong Univ., China)

Optically isotropic liquid crystal (LC) mixture such as blue phase LC and optically isotropic nano-structured LC composites exhibit the advantages of fast response time, high contrast ratio and wide-viewing angle due to the induced birefringence along the horizontal electrical field. Utilizing this mixture, a novel single cell gap IPS type polymer-stabilized blue phase transflective liquid crystal displays (IPS-PSBP-TRLCDs) by embedding the nano wire grid polarizer (NWGP) as a polarization-dependent reflective polarizer in the R region is proposed. As a result, this device can be used as a normally black mode without any quarter-wave plate (QWP) or a patterned in-cell phase retarder. Moreover, the transmittance is identical to the reflectance so that it can be suitable for single gamma driving. Detailed electro-optic performance, such as voltage-dependent light efficiency and viewing angle of the propose device configuration, is investigated.

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34. Moving Picture Quality

- Chair: D. G. Liu (Feng Chia Univ., Taiwan)- Co-chair: J. You (Hongik Univ., Korea)

[34-1] 13:30

[Invited] A Flicker-Reduced Memory Reduction for Volume-Zone LCD Overdrive

H. Sasaki (Toshiba Corp., Japan), T. Ishikawa, Y. Ishikawa, K. Ichikawa, and N. Saitou (Toshiba Microlecetronics Corp., Japan)

A memory reduction algorithm CCC-LCP (Color-Count-Controlled Local Color Palette) reduces flicker for LCD overdrive. Its compression ratio is 1:5.4 for 10-bits images, with

Our 2AFC (Two-Alternative Forced Choice) subjective tests verify practical applicability (1.2H distance threshold) for 42-inch 37-ppi WXGA-TV.

[34-2] 13:55

[Invited] Technologies Related to Field Sequential Color LCDs

K. Sekiya (Tohoku Univ., Japan)

Technologies and conceptual tools used in field sequen-tial color LCDs are overviewed. Scanning LED back-light, color gamut conversion, color-breakup reduction methods such as RGBKKK or Stencil-FSC, and over-drive to compensate color-shift are presented.

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34. Moving Picture Quality

[34-3] 14:20

Dynamic Global Dimming Method Based on the Comple-mentary Cumulative Distribution Function for LCD

P. Lavole, S.-J. Kang, S.-K. Lee, and Y. H. Kim (POSTECH, Korea)

This paper proposes a dynamic global backlight dimming method based on the calculation of the area under the complementary cumulative distribution function (CCDF) of the image histogram. This area is calculated until it reaches a threshold value, giving the maximum level data (MLD) from which pixels are clipped. The experimental results show that the proposed method can reduce significantly the power

by the PSNR metric.

[34-4] 14:40

[Invited] LED Backlight Driving Circuits and Dimming Method

O.-K. Kwon, Y.-H. Jung, Y.-H. Lee, H.-S. Cho, and K.-S. Nam (Hanyang Univ., Korea)

Backlight unit (BLU) systems of l iquid crystal displays (LCDs) require light-emitting diodes (LEDs) due to its various advantages. Many researches for driving circuits of LED BLUs and backlight dimming methods have been done to reduce power consumption of LCD BLUs and improve image quality in LCD panels. In this paper, various aspects of LED backlight driving circuits for medium and large sized LCDs and dimming method are proposed.

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35. Autostereoscopic Display Ⅰ

- Chair: S. Shestak (Samsung Electronics Co., Ltd., Korea)- Co-chair: M.-C. Park (KIST, Korea)

[35-1] 13:30

[Invited] Development of Performance Characteristics for 3D Displays

S.-I. Uehara, T. Koike, C. Kato, M. Uchidoi, T. Horikoshi, G. Hamagishi, Y. Hisatake, and H. Ujike (Japanese Ergonomics Nat’l Committee, Japan)

In order to indicate the performance of 3D displays properly, the development of characteristics needs to be accelerated. Since the primary purpose of 3D display is to provide depth perception to users, the characterization should be based on the visual ergonomics for stereopsis, especially depth visibility, comfort and Image Safety from VFSI. This paper shows the basic concept for characterization of 3D displays, and we particularly focus on the characteristic related with crosstalk and its visual

[35-2] 13:55

[Invited] Geometric Projective Model of Autostereoscopic 3D Display

V. V. Saveljev (Hanyang Univ., Korea)

An extendable geometric model of an autostereoscopic 3D display is considered. This general purpose model is based on the projective transformations. One more extension is proposed. Practical applications include the visual quality, measurement of geometric characteristics, and more.

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35. Autostereoscopic Display Ⅰ

[35-3] 14:20

Analysis on the Relationship between the Motion Picture Performance of the 3D Display and Picture Quality of 3D Image with Depth-Axis Movement

H.-J. Choi (Sejong Univ., Korea)

In this paper, the depth-axis movement of the 3D image is analyzed based on the principle of the binocular disparity and convergence. The virtual 3D image is expected to have better performance than the real 3D image.

[35-4] 14:40

An Autostereoscopic 2D/3D Display using Microretarder

C.-L. Wu, W.-T. Yen, L.-C. Lin, K. Lee, C.-F. Lu, C.-L. Wu, C.-J. Chen, and K.-C. Huang (ITRI, Taiwan)

An 22” microretarder-based naked-eye 3D display, which is capable of showing simultaneously clear 2D texts and multi-view images with depth in the same display frame, have been demonstrated. We have designed an integrated 2D/3D switching device, which is composed of a microretarder, a switching panel and other auxiliary optical films, so that the displays is convertible electrically between 2D and 3D mode.

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36. OLED DeviceⅠ

- Chair: E. Böhm (Merck KGaA, Germany)- Co-chair: T.-W. Lee (POSTECH, Korea)

[36-1] 13:30

[Invited] Optimization of Charge Carrier Balance in Blue OLEDs

U. Denker, C. Rothe, and J. Birnstock (Novaled AG, Germany)

Good lifetime and efficiency in blue OLEDs depends crucially on a well balanced charge carrier supply of electrons and holes to the emitting layer. Here we demonstrate optimizations for

different if electron supply is varied. While one blue emitter increases in lifetime and efficiency if the electron supply is reduced, the performance of the other system actually drops if fewer electrons are supplied to the emitter layer.

[36-2] 13:55

Measurement of Moisture Permeation Front into an Active Edge Sealant for Organic Photonics Applications: A Novel Approach for a New Material

A. Bonucci, P. Vacca, S. Zilio, L. Toia, and S. Tominetti (SAES Getters S.p.A., Italy)

One of the most important issues in organic photonics applications, like OLEDs, is the degradation due to moisture permeation. In a glass to glass configuration the main permeation source is the edge sealant. Although there are certified methods for the characterization of the permeation parameters, it is hard to measure WVTR and lag time directly

results of a new analytical method. This measurement technique has allowed the development of a new class of sealants that can ensure longer lag time and then reduce moisture influx during lifetime.

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36. OLED DeviceⅠ

[36-3] 14:15

Fabrication of Highly Efficiency Red Phosphorescent Organic Light-Emitting Diode with Different Doping Concentrations

Y.-H. Lan, C.-H. Hsiao, J.-H. Lee (Nat’l Taiwan Univ., Taiwan), and M.-K. Wei (Nat’l Dong Hwa Univ., Taiwan)

By doping Ir(2-phq)3 with different concentrations, the highest

cd/A and 19.1 lm/W, respectively. Also, more dopants could help carriers transport for reducing driving voltage.

[36-4] 14:35

Improvement and Control of Light Extraction in Transparent Organic Light Emitting Diode through Capping Layer Engineering

J.-W. Lee, J.-I. Lee, J. Lee, D.-H. Cho, J.-H. Han, J.-W. Shin, S. H. Kim, and H. Y. Chu (ETRI, Korea)

We studied the performance of transparent organic light emitting diodes (TOLED) with different capping layers on the transparent

employed to increase the light output of the normally directed emission toward to the top-direction. The second layer with high

used as a reflector to enhance the light output to the bottom-direction. By these capping layers, we successfully demonstrate improvement and control of light extraction in TOLED.

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37. Advanced TFT & Analysis

- Chair: S. Park (Chonbuk Nat'l Univ., Korea)- Co-chair: H.-N. Lee (Soonchunhyang Univ., Korea)

[37-1] 15:10

[Invited] Device Characterization Starting from Quasi-Static Capacitance-Voltage Characteristics for Thin-Film Transistors – Low-and High-Temperature Poly-Si,

M. Kimura (Ryukoku Univ., Japan)

Device characterization starting from quasi-static C-V characteristics has been applied to LTPS, HTPS, a-IGZO, ZnO and polymer TFTs with appropriate assumptions. Trap densities

density, process dependence, uniformity, degradation, etc. are discussed. It can be a common evaluation technique for all kinds of TFTs.

[37-2] 15:35

High Yield Solution-Based Deposition of Carbon Nanotube Thin Film Transistors for Flexible Display Applications

A. Schindler, S. Knorr, N. Frühauf (Univ. of Stuttgart, Germany), J. P. Novak, and Z. Yaniv (Applied Nanotech Inc., USA)

While the extraordinary performance in terms of charge carrier mobility of carbon nanotube transistors was demonstrated by many research groups, the fabrication of high uniformity arrays stays challenging. Controlled deposition of the carbon

spin coating process, we were able to produce transistors with uniform on/off ratios and charge charier mobilities.

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37. Advanced TFT & Analysis

[37-3] 15:55

High Contrast Active Matrix Organic Light Emitting Display with Top Gate Amorphous Silicon Thin Film Transistors

L. Hung-Chien, K.-Y. Ho, H.-S. Dai, Y.-S. Huang, J.-Y. Yan, P.-F. Lee, S.-Y. Peng, C.-H. Cheng, C.-W. Lin, and H.-C. Cheng (ITRI, Taiwan)

The photo-leakage current of top gate amorphous silicon thin film transistor (TFT) is studied. Result demonstrates that TFT with n-doped nanocrystalline silicon (n+ nc-Si) layer has at least one order of magnitude smaller than that with n-doped amorphous silicon (n+ a-Si) layer. Effect of n+ nc-Si layer with ultra-low resistance and nanocrystalline on TFT behavior is discussed. High contrast AMOLED display is achieved by using the a-Si:H TFTs with n+ nc-Si and conventional top gate structure.

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38. Discharge Physics

- Chair: Y. -S. Kim (Hongik Univ., Korea)- Co-chair: S.-H. Moon (LG Electronics Inc., Korea)

[38-1] 15:10

[Invited] Address Discharge Characteristics of High Lu--

ing Layer

K.-W. Whang, H.-W. Cheong, J.-C. Jung, T.-H. Lee, and O. Kwon (Seoul Nat’l Univ., Korea)

We have reduced the long aging time of AC PDP with SrO-MgO protecting layer by introducing a special provision to the front dielectric layer. As a result, the panel showed the luminous

aging time.(<3hrs.) In order to use SrO as an alternative for MgO, an in-depth study on high speed addressing of PDP with SrO is necessary. It was confirmed that the address delay as well as the display voltage margin in the SrO panel could be

reset waveform.

[38-2] 15:35

[Invited] Thomson Scattering Diagnostics of Micro-plasmas for Plasma Display Panel

K. Uchino, Y. Sonoda, and K. Tomita (Kyushu Univ., Japan)

Laser Thomson scattering (LTS) has been applied to diagnostics of PDP micro-plasmas and revealed electron density ne to be of the order of 1019-1020 m-3 and electron temperature Te to be around 1-2 eV. Furthermore, ne and Te

temporal changes have been successfully measured and their features have been discussed in connection with the striation phenomenon. In order to assist the development of PDP with high efficiency, LTS is tried to apply to study the structure of PDP discharges with narrow electrodes. Also, the streamer

examined.

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38. Discharge Physics

[38-3] 16:00

Two-Dimensional Simulation of Plasma Decay Time with Different Xenon Content

D. Zhu, H.Tolner, L. Yang, Y. Tu, X. Zhang, and B. Wang (Southeast Univ., China)

The discharge characteristic of Shadow Mask PDPs (SM-PDPs) with different xenon content is investigated in this paper using two-dimensional simulation.With the increase of xenon content, the number of electrons increases slightly, while the number of neon and xenon ions reduces dramatically. The decay time of both xenon metastables and xenon resonances also decrease with the increase of xenon content, and the number which is calculated with simulation results are been compared with theoretical values.

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39. Green Display Materials for Future Applications I

- Chair: H. Kim (Kyung Hee Univ., Korea)

[39-1] 15:10

[Invited] Contributions of Merck as Material Manufacturer to Green Displays and Electronics

W. Becker (Merck KGaA, Germany)

Displays and electronics are subjected to quite some regulations already. Those like RoHS (1) or REACH (2) restrict or ban certain hazardous substances. The European EuP (3) Directive concerns energy consumption. Moreover, voluntary industry initiatives like the ‘Halogen-free policy’ restrict critical substances additionally. Merck is committed to sustainability and has launched a corporate green chemistry initiative for environmental protection and resource conservation. As leading source for key display and electronics materials the Liquid Crystals Division pursues its Green3 concept providing innovative, legally compliant and safe specialty chemicals and eco-friendly processes for superior ‘green’ displays and electronics. Merck has also invented eco-efficient and WEEE (4) -conform recovery processes for waste LCDs.

[39-2] 15:35

[Invited] Technology of Diffractive Waveplates for Polarizer-Free Displays

S. R. Nersisyan, N. V. Tabiryan (US Army Natick Soldier RD&E Center, USA), B. R. Kimball, and D. M. Steeves (Beam Engineering for Advanced Measurements Co., USA)

Achievements in the technology of producing high quality diffractive waveplates with practically 100% efficiency over a large area advance the prospects and the concepts of polarizer-free LCDs.

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39. Green Display Materials for Future Applications I

[39-3] 16:00

Electrically Color Tunable Photonic Crystal Display for Electronic Skin

I. Lee, J. Kal, D. Go, J. Joo (NANOBRICK Co., Ltd., Korea), D. Kim, and Y. Kang (Hanyang Univ., Korea)

The visible regions of electrically color-tunable photonic crystal display (CPD) materials based on colloidal nanoparticles can show full-spectrum tunability without color filters. Quasi-amorphous col loidal structures of CPD exhibit angle-independent photonic colors in response to the electric stimuli. This noble CPD pixel can be a powerful candidate for electronic skin as well as electronic paper.

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40. Display Interface

- Chair: C. Yoo (Hanyang Univ., Korea)- Co-chair: K.-Y. Lee (Konkuk Univ., Korea)

[40-1] 15:10

[Invited] Intra-Panel Interfaces for Chip-On-Glass TFT-LCD Applications

M. Lee, J.-Y. Lee, D. Baek, J.-P. Lim, H.-S. Pae, W. Yu, Y.-M. Choi, Y.-H. Lee, S. I. Lee, and Y.-K. Choi (Samsung Electronics Co., Ltd., Korea)

This paper presents required properties of intra-panel interfaces for Chip-On-Glass (COG) TFT-LCD applications from distinct characteristics of COG channel compared to those of Chip-On-Film (COF) channel. Enhanced Reduced Voltage Differential Signaling (eRVDS) is introduced as a potential interface.

[40-2] 15:35

Resolution LCD Panel

Y. Cho, B. Kim, and J. Ahn (MC Tech. Co., Ltd., Korea)

Direct LVDS interface column driver IC for high definition (HD) resolution notebook panel is presented. As the driver IC includes timing controller function, it removes intra panel interface circuitry. Ultra slim, low power and low cost LCD panel is feasible with this new driver IC.

[40-3] 15:55

The Half-VDD Supply Rail Helps Reducing Power Con-sumption and Cost for LCD Systems

N. Guibourg (Texas Instruments GmbH, Germany)

the suitable DC/DC solutions for it. Many LCD manufacturers are adopting the source driver IC with Half-VDD supply rail because of its benefits in power and cost saving, which requires new DC/DC solution. The suitable topologies are studied, showing that the synchronous converter offers best compromise.

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94

41. Autostereoscopic Display Ⅱ

- Chair: V. V. Saveljev (Hanyang Univ., Korea)- Co-chair: H. Kim (Korea Univ., Korea)

[41-1] 15:10

[Invited] Optimal Design of Lens Array for Wide-Viewing Angle Multi-View Lenticular 3D Displays

H. Kim (Korea Univ., Korea), and J. Hahn (Duke Univ., USA)

In this paper, we investigate the optimal design problem of lenticular lens array show for wide viewing angle lenticular 3D display. It is shown that the use of triplet lens array enables the wide-viewing angle observation with low-cross talk. We propose the optimal design procedure of triplet lens array for lenticular 3D displays using genetic algorithm with specially devised optimization cost function.

[41-2] 15:35

[Awarded Paper- Merck Award]Super Multi-View Windshield Display for Driving Assistance

Y. Urano, Y. Takaki (Tokyo Univ. of Agriculture and Tech., Japan), S. Kashiwada, H. Ando, and K. Nakamura (Denso Corp., Japan)

A three-dimensional windshield display (3D-WSD) can display driving information at the same depth as objects in the outside scene. We propose a super multi-view 3D-WSD because the super multi-view display technique provides smooth motion parallax. Motion parallax is the only physiological cue for perceiving the depth of a 3D image displayed at a far distance, which cannot be perceived by vergence and binocular parallax. A prototype system with 36 views was constructed, and the discontinuity of motion parallax and the accuracy of depth perception were evaluated.

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Room 303

41. Autostereoscopic Display Ⅱ

[41-3] 15:55

A Novel Full-Parallax Three Dimensional Display

S. Li, H. Li, Z. Zheng, Y. Peng, and X. Liu (Zhejiang Univ., China)

A full-parallax three dimensional display was proposed in this paper. It can display 3D images with 45 views, including 9 horizontal views by 5 vertical views. The angle pitches between two horizontal views and two vertical views are both 4.77 degree. The resolution and the size of the 3D images displayed are 226*226pixels and 30*30 cm2. The display system contains a LCD display, a lens array, and a directional diffuser. The resolution and the size of the LCD display are 1920*1080pixels and 23 inches. The lens array consists of 45 Fresnel lens. The horizontal and vertical diffuse angles of the directional diffuser are both 4.77 degree.

96

42. OLED Device Ⅱ

- Chair: J. Birnstock (NOVALED AG, Germany)- Co-chair: J. Park (The Catholic Univ. of Korea, Korea)

[42-1] 15:10

[Invited] Self-Organized Versatile Anode for Flexible Organic Devices

S.-H. Woo, K.-G. Lim, T.-H. Han, M.-R. Choi, and T.-W. Lee (POSTECH, Korea)

We tuned the work function of the polymeric anode layer which is consists of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and a perfluorinated ionomer (PFI). The maximum work-function of the anode is 5.8

are reported until now. Moreover, transparency was higher than 90 % in all the visible range. We achieved maximum luminous efficiency 18.9 cd/A in small molecule organic light-

heterojunction organic photovoltaic cells based on our polymeric anode system.

[42-2] 15:35

Tuning OLED Performance by Numerical Simulations

R. Nitsche (Sim4tec GmbH, Germany), M. Furno, R. Meerheim, B. Lüssem, and K. Leo (Technische Univ. Dresden, Germany)

We demonstrate how to use electrical and optical modeling to design efficient 1st and 2nd order microcavity OLEDs. The results show that 2nd order OLEDs can be more efficient

molecule matches the optical properties of the microcavity. We

the-art p-i-n OLED.

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42. OLED Device Ⅱ

[42-3] 15:55

[Invited] Localized Surface Plasmon Mediated Luminescent Enhancement of Polymer LEDs using Nanocomposite Hole-Injection Layer

P.-J. Cheng, H.-M. Shih, J.-A. Cheng, C.-H. Tien, and C.-S. Hsu (Nat’l Chiao Tung Univ., Taiwan)

A hole-injection-layer in PLED with a plasmonic metallix nanostructure was demonstrated. The device with Au nanoparticles-incorporated PEDOT:PSS layer revealed a 3.3x

model by exact electrodynamical method. The nanocompostie layer remarkably enhanced the EL intensity of devices about 2.5x.

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Poster Session 1

Grand Ballroom Lobby

98

[P1-1]

A Novel Five-Photo-Mask LTPS CMOS Structure with Improved Storage Capacitor for AMLCD Application

K.-M. Oh, S.-W. Lee, S.-J. Lee, M.-K. Baek, K.-E. Lee, M.-S. Yang, and Y.-K. Hwang (LG Display Co., Ltd., Korea)

complementary metal oxide semiconductor (CMOS) structure

area formation process was developed, without additional photo mask steps, to solve the sputtering damage encountered inevitably in the contact between polycrystalline silicon (p-Si) and storage metal.

[P1-2]

Investigation on Relation between Image Sticking and Storage Capacitance of TFT-LCD

Z. T. Wang, J. Feng, Y. M. Kwon, H. J. Qiu, T. Y. Min, W. B. Gao, and S. K. Lee (BOE Optoelectronics Tech. Co., Ltd., China)

Relation between image sticking and storage capacitance of TFT-LCD is investigated in the paper. Big storage capacitance

temperature and stable variation trend of image sticking at high temperature because of relatively small feedthrough voltage.

Poster Session 1


99October 11-15, 2010

[P1-3]

Investigation on Turn-on Voltage Instability in Hafnium Zinc Oxide Transistors

W.-S. Kim, Y.-K. Moon, K.-T. Kim, S.-Y. Shin, and J.-W. Park (Hanyang Univ., Korea)

The origin of the negative bias temperature instability (NBTI)

(TFTs) was investigated. The HZO TFTs showed that the turn-on voltage (VON) shifted from -2 V to -7 V with negligible changes in

FE) after a time of total stress. This performance is dramatically improved compared to that of TFTs with ZnO channel layers.

[P1-4]

Effect of Channel Scaling on ALD Prepared Transparent

W.-S. Choi (Hoseo Univ., Korea)

Different thickness of active layer in ZnO bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric by using injector type atomic layer deposition (ALD). The properties of the ZnO TFT were influenced by the active thickness and width-to-length (W/L) ratio of device. The threshold voltage of zinc oxide TFTs moved to positively with the decrease of active layer thickness while the subthreshold slope decreased. The W/L ratio of ZnO TFT also affects the mobility and subthreshold slope.

Poster Session 1


100

[P1-5]

Fabrication of Fully Transparent Transistors through Solution-Processing of ZnO Quantum Dots

J.-S. Ahn, J.-J. Lee, H.-J. Byun, and H. Yang (Hongik Univ., Korea)

ZnO-based transistors were solution-processed by using ZnO quantum dots (QDs) that were well dispersed in 2-methoxyethanol. Spin-casted ZnO QD layer was annealed to remove QD capping organic molecules and increase the connectivity of adjacent QDs. 600oC-annealing of QD channel layer resulted in the highest electrical performances of bottom-gate QD-based transistor. Sn doping into QD channel layer was found to be effective to further improve the electrical characteristics of QD-based transistor. Furthermore, a fully transparent Sn-doped QD-based device was demonstrated by sputter-deposition of Ga-doped ZnO as source-drain transparent electrodes and it electrical properties were characterized.

[P1-6]

Role of High-k Material For Co-sputtered Metal Oxide Thin Film Transistors

D.-H. Son, S.-J. Sung, E.-A. Jung, J.-K. Kang, D.-H. Kim (DGIST, Korea), and J.-H. Kim (Keimyung Univ., Korea)

and TaInZnO thin film as active channel layers. The active channel layers were deposited by co-sputtering system. It was

by the composition of high-k material suppressing formation of oxygen vacancies. The performance of fabricated transistors improved clearly with high-k material amount.

Poster Session 1


101October 11-15, 2010

[P1-7]

The Addition Effects of Zr and Ta in Sol-Gel Derived InZrZnO and InTaZnO Thin Film Transistors

J.-H. Kim, D.-H. Son, S.-J. Sung, E. A. Jung, J.-K. Kang, D.-H. Kim (DGIST, Korea), and K. R. Ha (Keimyung Univ., Korea)

The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.

[P1-8]

Modeling of a-Si TFT for the Integrated Gate Driver and Pixel Simulation for the Large Size LCD

T. W. Moon, J. Y. Seo, W. S. Choi, S. C. Choi, S. B. Ryu, Y. H. Jang, K.-S. Park, C.-D. Kim, and Y.-K. Hwang (LG Display Co., Ltd., Korea)

We propose a new TFT model for spice simulation in large-sized LCD panel design. The accuracy of current-voltage characteristics of a-Si TFTs is enhanced by including Schottky behavior and photocurrent property. The model gives more reliable results for large-sized TV panel with the a-Si gate driver operating at high frequencies.

Poster Session 1


102

[P1-9]

Zinc-Tin-Oxide Thin-Film Transistors and Circuits by Ink-Jet Printing

Y.-H. Kim, M. S. Oh, K.-H. Kim (KETI, Korea), H. J. Kim (Yonsei Univ., Korea), M.-K. Han (Seoul Nat’l Univ., Korea), and S. K. Park (Chonbuk Nat’l Univ., Korea)

High performance amorphous zinc-tin-oxide (a-ZTO) thin film transistors (TFTs) and simple inverter circuits have been developed by using ink-jet printing and rapid thermal annealing (RTA) process. It was found that the substrate heating during ink-jet process had significant influence on ZTO channel morphology and the electrical properties. The TFT devices with a-ZTO layer printed at 50oC showed the best electrical

2/Vs, Ion/off=109). Also, a-ZTO TFT based inverter was fabricated with acceptable logic level conservation.

[P1-10]

Effects of Atmospheric Plasma Surface Treatment on Zinc Tin Oxide Channel Layer for Device Applications

S. J. Oh, Y. H. Kim, M. S. Oh (KETI, Korea), and J. W. Kang (Dankook Univ., Korea)

We report on the effect of atmospheric plasma treatment on the channel of Zinc Tin Oxide transistors. The electrical performance and uniformity of plasma-treated device were

off current ratio of the plasma-treated device were enhanced to 10.04 cm2/Vs, 0.96 V/dec and 1×109 respectively, compare with non-treated device (7.76 cm2/Vs, 1.21 V/dec and 1×109). And, after atmospheric plasma treatment, we could fabricate very uniform ZTO-TFTs with very small variation of the properties among many devices.

Poster Session 1


103October 11-15, 2010

[P1-11]

Study of the Multi-Level Gate Voltage Effect on TFT-LCD Display Quality

M. Zhang, H.-C. Kim, J.-L. Zhu, Y.-L. Huang, and J. Ryu (BOE Tech. Group Co., Ltd., China)

At a-si TFT-LCD, when gate signal is from on state to off state, because of the coupling capacitance Cgs of gate electrode and source electrode, the voltage of pixel electrode occurs

and improve the voltage of pixel electrode at holding stage. This

of the trend of the MLG voltage changed, and the effect of MLG on TFT-LCD display quality.

[P1-12]

[Awarded Paper - Outstanding Poster Paper]Comparative Study on Light-Induced Bias Stress Insta-bilities of IGZO Thin Film Transistors with SiNx and SiOx

Gate Dielectrics

K.-H. Ji, J.-I. Kim, J. K. Jeong (Inha Univ., Korea), Y.-G. Mo (Samsung Mobile Display Co., Ltd., Korea), S. H. Yang, and S. H. Ko Park (ETRI, Korea)

We investigated the effect of gate dielectric materials on the light-induced bias-temperature instability of IGZO TFT. The application of light on the negative bias temperature stress (NBTS) accelerated the negative displacement of the threshold voltage (Vth) of the SiOx-gated IGZO TFT. This phenomenon can be attributed to the trapping of the photon-induced carriers into the gate dielectric/channel interface or the gate dielectric bulk. Interestingly, the negative Vth shift under photon-enhanced NBTS condition was deteriorated for the SiNx-gated IGZO TFTs. This result can be explained by considering the hole carrier injection barrier (i.e. valance off-set) and the density of hole trap centers in bulk gate dielectric materials for both devices.

Poster Session 1


104

[P1-13]

Double Polymer Layer for a High Dielectric Gate Insulator in 6,13-bis(triisopropylsilylethynyl)-Pentacene Field-Effect Transistor

W.-H. Kim, J.-H. Bae, M.-H. Kim, C.-M. Keum, and S.-D. Lee (Seoul Nat’l Univ., Korea)

We report on the reduction of the operating voltage using a high dielectric polymeric insulator in the 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistor (FET). The paraelectric poly(vinyl phenol) was prepared as a screening layer on a high dielectric ferroelectric poly(vinylidene fluoride-trifluoroethylene) insulator to eliminate the hysteresis in the FET. It is found that the double layered insulator in our TIPS-pentacene FET reduces the operating voltage by a factor of about three.

[P1-14]

Effect of Ti Doping in Indium-Tin-Oxide Thin Film Tran-sistors

J.-I. Kim, K.-H. Ji, and J. K. Jeong (Inha Univ., Korea)

channel have been fabricated by using co-sputtering technique. It was found that role of titanium atoms is to suppress the net electron carriers at high annealing temperatures. Thus, the Vth

value of the oxide TFTs largely shifted from 3.0 V to 15.7V as

mobility was diminished with increasing Ti atoms. Therefore, it was postulated that the behavior of substituted Ti4+ ions in In2O3 lattice on Sn4+ ions site would result in the reduction of carrier concentration due to the large band-gap of TiO2 dielectric material.

Poster Session 1


105October 11-15, 2010

[P1-15]

Design of Optimized Solution Processed Oxide TFT Composition by Addition of Aluminum to Indium Tin Oxide

J.-H. Jeon, Y.-H. Hwang, S.-J. Seo, and B.-S. Bae (KAIST, Korea)

Aluminum was added to solution-processed conductive indium

film transistor. The systematic variation of TFT characteristics was observed clearly, displaying the transformation to the semiconductor with increasing the Al content. AITO TFTs annealed at 400°C and 500°C were optimized at the final composition of x=0.2 and x=0.4 of (Al2O3)x(In2O3)0.9-x(SnO2)0.1.Each channel layer operated in enhanced mode and exhibits mobility of 3.33 and 4.48 cm2 which is applicable to the

[P1-16]

The Effects of Alkyl SAM Chain Length on Pentacene Thin-Film Transistors

M.-J. Park, H. Cho, M. Kim, C.-M. Kang, and C. Lee (Seoul Nat’l Univ., Korea)

assembled monolayer (SAM) based on alkyl-trichlorosilanes with four different alkyl chain lengths. We investigate the

of pentacene TFTs. We found a monotonic increase in field-

better performances in the threshold voltage (Vth), subthreshold swing (S), and on-to-off current ratio (Ion/Ioff) were showed in the devices which dielectric was treated with longer alkyl chain length.

Poster Session 1


106

[P1-17]

Effectiveness on Improving Static and Dynamic Imaging Signal on Flat Panel Display

P.-C. Pan, C.-C. Chou, and H.-S. Koo (Minghsin Univ. of Science Tech., Taiwan)

This template provides a different point of view on improving the display quality which the improvement is not only from display devices, but also from image capturing devices. Combining with the characteristics and improvement of these two kinds of devices, display quality will be enhanced with a complete idea.

[P1-18]

Review of Image Capturing Device Transferring Signal to Flat Panel Display

P.-C. Pan, C.-H. Cheng, and H.-S. Koo (Minghsin Univ. of Science Tech., Taiwan)

This template introduces the basic idea of image capturing device with the present and future developing trend. Beside, this paper will discuss the restriction of image capturing devices, so that it can lead reader to realize the way when getting in to this research area.

[P1-19]

A Development of Hybrid a-Si TFT PA to Improve the TFT Performance for High Voltage Bias-Stress

J.-H. Kim, K. Kim, Y. Jang, J. Kim, T. Seo, J.-S. Yoon, and K. Uh (Samsung Mobile Display Co., Ltd., Korea)

One of the common characteristics of the electrophoretic materials is that higher operating voltage is required to properly operate the display comparing to the operating voltage of LCD. In this research, we would like to propose that the robust a-Si TFT process architecture improving bias-stress performance for high voltage bias-stress due to the electrophoretic properties with high operating voltage.

Poster Session 1


107October 11-15, 2010

[P1-20]

Effect of Atomic in-situ Hydrogen Annealing for Gate Dielectric Cat-CVD Silicon Nitride Films on Flexible Substrate at temperature Below 200℃

K.-S. Keum, K.-M. Lee, J.-D. Hwang, Y.-J. Lee, K.-S. No, and W.-S. Hong (Univ. of Seoul, Korea)

We fabricated silicon-based bottom gate thin film transistors ℃) by catalytic chemical

vapor deposition (Cat-CVD) system. Tri-layer, silicon nitride (SiNx), nano-crystalline silicon (nc-Si), and n+-silicon (n+-Si), of TFTs were deposited continuously without vacuum breaking. To improve an on/off ratio of TFTs, we attempted to in-situ annealing on SiNx gate dielectric layer at atomic hydrogen (H2)atmosphere. The in-situ H2 annealing was performed before deposition nc-Si channel layer. As a result, we achieve the on/off ratio more than 105.

[P1-21]

The Effect of Ti on InZnO Based Thin-Film Transistors

D. L. Kim, W. H. Jeong, and H. J. Kim (Yonsei Univ., Korea)

This paper dealt with the investigation on the effect of Ti addition in InZnO. The solution process of TiInZnO thin-film

electrical properties in TIZO TFT was compared to that of IZO TFT. The analyses on the electrical properties confirmed the carrier suppressing role of Ti. The improved current modulation property of on/off ratio of 106 and subthreshold slope of 1.08 V/dec in the transfer curve was achieved in TIZO TFT.

Poster Session 1


108

[P1-22]

[Awarded Paper - Outstanding Poster Paper]The Effects of Active Layer Thickness in Solution-Processed HfInZnO TFTs

W. H. Jeong, G. H. Kim, D. L. Kim, H. S. Shin, H. J. Kim (Yonsei Univ., Korea), M.-K. Ryu, K.-B. Park, J.-B. Seon, and S.-Y. Lee (SAIT, Korea)

In this paper, the effects of active layer thickness in Hf-InZnO (HIZO) thin film transistors (TFTs) have been investigated for device optimization using solution process. Total carrier density and bulk resistance (Rbulk) of HIZO TFTs were considered for solution-processed HIZO TFTs optimization.

[P1-23]

High Performance of Thin Film Transistor using Novel Dual Electrode Structure

K. Jo, E. Chong, Y. S. Chun, S. Y. Lee (KIST, Korea)

Dual electrode structure was applied to improve the properties of a-IGZO TFT, and this structure has been demonstrated and compared to the conventional bottom and top electrode structures. The threshold voltage (Vth FE) and subthreshold swing (S.S) values were improved compare to those of both bottom and top electrode structures. These improvements were achieved by enlarged contact area of electrodes and minimized the carrier disturbing from the interfacial defects. In the case of novel dual electrode structure, the majority current path is away from the interface, thus electrons can move through the active layer not disturbed from interfacial defects.

Poster Session 1


109October 11-15, 2010

[P1-24]

Novel Structure for VA-Mode TFT-LCD

X. Huang, D. C. Chung, Y.B. Qiao, L. F. Zhou, Y. W. Chiu, C. T. Liao, and T. S. Jen (InfoVision Optoelectronics (Kunshan) Co., Ltd., China)

In this paper, a new vertical alignment (VA) structure with the push-pull electrical design named as PPVA2 is proposed. The PPVA2 TFT-LCD has the advantages of fast response time because of doubly push-pull electrical force to LC molecules, the high transmittance caused by diminishing disclination lines, as well as wide viewing cone and low manufacturing cost.

[P1-25]

Fringe Field MVA LCDs in 26-in WXGA TFT-LCD TV

X. Y. Wang, Y. W. Chiu, D. C. Chung, T. S. Jen (InfoVision Optoelectronics (Kunshan) Co., Ltd., China), J. Chou, and H. L. Ong (Kyoritsu Optronics Co., Ltd., Taiwan)

domains vertical alignment (MVA) mode for large size TV applications. We successfully eliminated all protrusions and ITO slits on both TFT and CF substrates and obtained proper

technology was applied to a large size LC TV. In this paper, we designed and produced a 26-in AIFF MVA TFT-LCD, and made a comparison of optical performance between linear and circular polarizers, including transmittance, contrast ratio, color shift, response time and touch mura.

Poster Session 1


110

[P1-26]

Fast Switching Four-Domain Twisted Nematic Mode using Reactive Mesogen

M.-G. Choi, J.-H. Jeong, T.-M. Kim, Y.-K. Moon, and J.-H. Kim (Hanyang Univ., Korea)

We proposed a method to improve the response time of the four-domain twisted nematic (TN) structure through surface modification using photo-curable reactive mesogen. In our structure, we improved a response time characteristic of the four-domain TN structure dramatically, especially in falling time.

[P1-27]

[Awarded Paper - Outstanding Poster Paper]Single-Polarizer Liquid Crystal Display Mode using a Passive Polarization-Dependent Microlens Arrays

J. Jeong, Y. W. Kim, D. H. Jung, J.-H. Kim, C.-J. Yu (Hanyang Univ., Korea), and J. S. Gwag (Yeungnam Univ., Korea)

We proposed the single-polarizer liquid crystal display (LCD) mode for enhanced response time using a passive polarization-dependent microlens arrays (MLA). Due to the flat-surface in liquid crystal layer (LCL), the response time can be enhanced at whole applied voltages. We expected that this LCD mode has a

Poster Session 1


111October 11-15, 2010

[P1-28]

Synthesis and Properties of Bent-core Molecules with Different Substitution Positions of Central Naphthalene Unit

E.W. Lee, E.-J. Choi (Kumoh Nat’l Inst. of Tech., Korea), J.-H. Son, and W.-C. Zin (POSTECH, Korea)

New bent-core molecules with central naphthalene units and lateral fluorine substituents were synthesized and their mesomorphic properties were investigated. The molecular

NMR-spectroscopy. The purity of bent-core molecules was

were characterized by differential scanning calorimetry (DSC), polarizing optical microscopy (POM) and X-ray diffractormetry (XRD).

[P1-29]

[Awarded Paper - Outstanding Poster Paper]Optical Design for Reflective Dual Operation Liquid Crystal Display

T. Kim, J. H. Lee, T.-H. Yoon, and J. C. Kim (Pusan Nat’l Univ., Korea)

We propose a reflective dual operation liquid crystal display (LCD) that can be operated in memory mode as well as dynamic

LCD has contrast ratio of over 300:1 in both memory and dynamic modes due to a completely dark state over the entire visible-wavelength range.

Poster Session 1


112

[P1-30]

Super-Thin and Lightweight LCD without Glass Substrates

H.-J. Jin, K.-H. Kim, K.-H. Park, J. C. Kim, T.-H. Yoon (Pusan Nat’l Univ., Korea), and P. K. Son (Kyung Hee Univ., Korea)

We propose a super-thin and lightweight LCD without glass substrates, where polarizers play the role of substrates as well. Indium-tin-oxide and a-SiOx are deposited sequentially on each polarizer. LCs are aligned on the a-SiOx layer through the ion beam exposure. We realized a super-thin LC cell whose electro-optic characteristics are similar to that of a conventional LC cell with glass substrates.

[P1-31]

[Awarded Paper - Outstanding Poster Paper]

K.-H. Kim, H.-J. Jin, J. C. Kim, T.-H. Yoon (Pusan Nat'l Univ., Korea), B.-H. Cheong, H.-Y. Choi, and S. T. Shin (Samsung Electronics Co., Ltd., Korea)

and transmissive modes by placing a cholesteric LC (CLC)

planar state of CLC is transparent because of its long-pitch for the dark state. The bright state is obtained by light scattering of focal conic texture. In the transmissive mode, gray tones are achieved by the vertical-aligned LC layer when the CLC layer

successfully without pixel division or half-mirror.

Poster Session 1


113October 11-15, 2010

[P1-32]

Study on Improvement of Dark State in Homogeneously Aligned Liquid Crystal Devices

D. W. Kwon, K. S. Ha, Y. J. Lim, M.-H. Lee, and S. H. Lee (Chonbuk Nat’l Univ., Korea)

To increase contrast ratio (CR) of homogenously aligned LC devices by improvement of dark state and also improve image sticking resistance, reactive mesogen (RM) is mixed with LC and cured at different temperatures. Dark state is improved in the LC cell cured at low temperature by strengthened surface anchoring energy after curing RM.

[P1-33]

A Novel Mesogen Monomer with High Durability for PSVA-LCDs

R. Kawakami, S. Niiyama (Asahi Class Co., Ltd., Japan), Y. Soda, and Y. Nakagawa (Optrex Corp., Japan)

We proposed a novel UV curable reactive mesogen monomer for VA-LCD with Polymer-Stabilized Vertical Alignment (PSVA) which shows a high display performance. The experimental results reveal that the PSVA by the novel-monomer realizes less image sticking and better response time.

[P1-34]

High Transmittance Field-Controlled Vertical Aligned Nematic Mode

M. S. Park, J. H. Kwon, and J. S. Gwag (Yeungnam Univ., Korea)

In order to improve the conventional PVA mode, as a new VA mode, we present field-controlled vertical alignment (FVA) nematic mode with two patterned common electrodes which induce horizontal electric field that prevents LC disclination generated between slits of the PVA. In a result, the proposed FVA mode can improve response speed and transmittance, compared with the PVA mode.

Poster Session 1


114

[P1-35]

Fabrication of Passive Matrix Driven 3.5-inch QVGA Bistable Chiral Splay Nematic Display

Z. Hong, Y. Jin, K.-S. Kim, J.-G. Ying, C. G. Jhun, S.-B. kwon (Hoseo Univ., Korea), J. H. Lee, and J. C. Kim (Pusan Nat’l Univ., Korea)

The bistable chiral splay nematic display is one of most promising memory mode in that it can be operated as dynamic and memory mode in a single mode. In this paper, we developed fabrication process of QVGA bistable chiral splay nematic (BCSN) panel and passive matrix driving scheme. We also demonstrated the 3.5-inch QVGA passive matrix BCSN display with excellent memory characteristics.

[P1-36]

Fringe-Field Switching Transflective Liquid Crystal Display using Low Twist Nematic mode in Reflective Region

J. H. Her, S. J. Shin, Y. J. Lim, S. H. Lee (Chonbuk Nat’l Univ., Korea), K. H. Park, J. H. Lee, and B. K. Kim (LG Display Co., Ltd., Korea)

compensation film or in-cell retarder are proposed. In both

twist angle of liquid crystal is 64°. These devices have single gamma curve because voltage dependent transmittance curve

Poster Session 1


115October 11-15, 2010

[P1-37]

Change of Electric Response due to Polymer-Stabilization of Planarly Aligned Cholesteric Liquid Crystals

H. H. Lee, J.-h. Kim (Chungnam Nat’l Univ., Korea), and H. Kikuchi (Kyushu Univ., Japan)

Director orientation from dielectric response of the planarly aligned cholesteric liquid crystal showed sub-millisecond

simultaneously. Especially the pitch elongation is expected to disturb the fast dielectric response. So we tried to block the pitch elongation with polymer stabilizing the cholesteric structure. The polymer stabilized cholesteric structure indicates that the structure is stable up to several times higher electric

[P1-38]

The Fabrication of Flexible Bistable Chiral Splay Nematic Liquid Crystal Display Panel

J.-S. Seok, J.-H. Moon, U.-S. Jung, C. G. Jhun, S.-B. Kwon (Hoseo Univ., Korea), J. H. Lee, and J. C. Kim (Pusan Nat’l Univ., Korea)

The bistable chiral splay nematic display is one of most promising memory mode. For the effective memory transition,

nematic liquid crystal display (BCSN LCD) with the for terminal electrode structure. We demonstrate the fabrication process of the electrodes and the organic insulation layer on the flexible substrate at room temperature.

Poster Session 1


116

[P1-39]

Study on New Pixel Structure of Fringe Field Switching Mode for High Performance

K. S. Ha, C. W. Woo, and S. H. Lee (Chonbuk Nat’l Univ., Korea)

To improve transmittance, color characteristics, and bruising mura of FFS mode with positive dielectric liquid crystal, we proposed new electrode structure, 2 domain electrode structure. In proposed electrode structure, color shift characteristic according to the viewing angle is reduced than conventional 1 domain FFS mode, and transmittance is improved than conventional 2 domain.

[P1-40]

Aluminum Electrode and Alumina Layer for Plasma Display Panel

Q. Liu, Y. Wang, H. Wang, and G. Ding (Shanghai Jiao Tong Univ., China)

Patterned aluminum as data electrode and alumina dielectric layer formed on aluminum electrode was prepared separately by using magnetron sputtering and anodic oxidation method for plasma display panel. With this structure, the manufacturing cost of PDP could be cut down and the luminous efficacy is expected to be improved for PDP. The aluminum electrode and alumina dielectric layer which were prepared all have desired performances.

Poster Session 1


117October 11-15, 2010

[P1-41]

Effects of Gas Chemistry (Pressure, He, and Xe Contents) in Ternary Gas Mixture on Temporal and Permanent Image Sticking in 42-in. and 50-in. AC-PDPs

C.-S. Park, J. H. Kim, and H.-S. Tae (Kyungpook Nat’l Univ., Korea)

on a bright screen were examined under various pressures, He, and Xe contents in the 42-in. and 50-in. AC-PDPs with a ternary gas mixture (Xe-He-Ne). With a decrease in the working gas pressure and Xe contents, and an increase in the He contents, the temporal image stickings were observed to be reduced. Whereas, with an increase in the working gas pressure, and a decrease in the He and Xe contents, the permanent image stickings were observed to be reduced.

[P1-42]

Relationship between Exo-Electron Current and Statistical Delay in AC PDP

Y. Kuang, S.-H. Yoon, and Y.-S. Kim (Hongik Univ., Korea)

Exo-electron emission from MgO has been noted as a key priming source for addressing discharge in ACPDP. In this paper, effects of sustaining pulses and temperature on exo-electron current and statistical delay of addressing discharge were measured respectively. The measured exo-electron current observed to follow the inverse relationship with statistical delay time of addressing discharge.

Poster Session 1


118

[P1-43]

Wall Voltage Loss by Exoemission

N. Awaji, H. Tolner, S. Miyamoto, and H. Kajiyama (Hiroshima Univ., Japan)

The loss of wall voltage during the addressing waiting time tw has been investigated, and is found to correspond to an effective exoemission current that is inversely related to the time, i.e. Iexo~1/tw. This relation is approximately valid over 3 decades from 10 usec to 16.7 msec. Due to the 1/t behavior of the effective exo-current, most of the initial wall voltage loss occurs during the first few hundred microseconds. The wall voltage loss for Sc3+ doped MgO is about two times larger than that of undoped MgO.

[P1-44]

Measurement of Single Crystal MgO Energy Band Structure

J. H. Choi, C. G. Son, Y. J. Hong, K. A. Lee, H. S. Uhm, and E. H. Choi (Kwangwoon Univ., Korea)

We have studied the electron energy band structure of MgO single crystal based on the Auger neutralization theory using

secondary electron emission characteristics of MgO single crystals which have different crystal orientation. We measured the energy band structure fe

from secondary electron emission characteristics with He ion source (24.58eV) in the three kinds of MgO single crystal with respective (100), (110), (111) orientations.

Poster Session 1


119October 11-15, 2010

[P1-45]

Electro-Optical Characteristics of Degraded Functional Layer on MgO Protective Layer in AC-PDP

K. A. Lee, C. G. Son, J. H. Choi, Y. J. Hong, and E. H. Choi (Kwangwoon Univ., Korea)

We have investigated electro-optical characteristics of the MgO layer during the continuous discharge in AC-PDP, on which the functional layer has been deposited by the spray coating. For observation of degraded MgO layer characteristics, we measured the discharge voltage, address delay time, surface morphology, cathodoluminescence (CL) spectrum and other discharge characteristics after 500 hours discharge.

[P1-46]

Effect of Protective Layers on the Cell Efficiency of Plasma Display Panels

A. Khorami (IRIB Univ., Iran), and S. Ghanbari (Univ. of Essex, UK)

As a result of increasing Xe partial pressure, the luminous

low. The discharge voltage is mainly determined by evaluating

on the properties of different protective layers such as MgO, CaO-MgO and SrO on the breakdown voltage and the Xe

is considerably reduced for SrO with respect to MgO-CaO and MgO protective layers.

Poster Session 1


120

[P1-47]

Effect of Different Gas Compositions on Luminance

A. Khorami (IRIB Univ., Iran) and S. Ghanbari (Univ. of Essex, UK)

Producing visible photons within color Plasma Display Panels (PDPs) depends on the production of ultraviolet (UV) radiation from Xe excited atoms. However, due to increasing Xe partial

paper discusses the effect of different gas compositions on discharge characteristics and color purity. Simulation results show that the improvement of cell efficiency through the Ne(25%)-He(70%)-Xe(4%)-(Ar or Kr) gas mixtures is higher with respect to conventional gas mixtures.

[P1-48]

A Study of Breakdown Characteristics Depending on Wall Charge Status on Emissive Layer

S. Lee and J. Kang (Dankook Univ., Korea)

In this paper we investigated the breakdown characteristics depending on wall charge amount and polarity on emissive layer. 8 different waveforms were tested. Based on measurements of breakdown voltage and IR sum, the accumulation of negative wall charges on pulse-applied electrode and negative applied voltage were important to decrease the breakdown voltage and increase the charge density.

Poster Session 1


121October 11-15, 2010

[P1-49]

Fast Rise-time Asymmetric Bipolar Sustain Waveform for

S. Sharma, D. Kachhwaha, H. K. Dwivedi (Samtel Color Ltd., India), A. K. Srivastava, Ramprakash and K.S. Suraj (Jaipur Centre, India)

Presently, all the research related to plasma display panel (PDP) technology is focused on various approaches for solving

voltage rise time of sustain pulses from 2x108V/sec to 4x108 V/

electron temperature which increases the xenon atom excitation in the gas mixture and increases VUV production. The increase in ion heating losses arising due to high electron temperature is compensated by asymmetric bipolar waveform.

[P1-50]

[Awarded Paper - Outstanding Poster Paper]Spatiotemporal Behavior of Excited Xe Atom Density in the 1s5 Metastable State According to the Hoof Type Electrodes Structure in Alternating Current Plasma Display Panel

Y. H. Kim, Y. J. Hong, Y. G. Han, G. S. Cho, and E. H. Choi (Kwangwoon Univ., Korea)

In order to improve the luminescence characteristics of high

we have developed a new electrode structure that involve the use of the hoof type and we have studied the spatiotemporal behavior of the density of excited Xenon atom in the 1s5

metastable state by laser absorption spectroscopy. By using this structure, the maximum density of excited Xenon atom per one cell was improved to 2.4 times of that when the conventional electrode structure is used.

Poster Session 1


122

[P1-51]

[Awarded Paper - Outstanding Poster Paper]Influence of Permanent Image Sticking Characteristics with Various Address Waveforms during Sustain Period in AC Plasma Display Panel

S.-Y. Kim, C.-S. Park, J. H. Kim, and H.-S. Tae (Kyungpook Nat’l Univ., Korea)

In this paper, to reduce the permanent image sticking phenomenon of ac-PDP, the various address waveforms during a sustain period were examined. To compare the permanent image sticking for the various address waveforms, the normalized luminance, discharge current, and Vt closed curve were measured. It was observed that the permanent image sticking was mitigated for the application of 60V bias pulse and

[P1-52]

Exo-electron Emission of Fe-Doped MgO Thin Film

S.-Y. Cho, D.-H. Kim, C.-H. Park, H. J. Lee, and H.-J. Lee (Pusan Nat’l Univ., Korea)

Recent experiments have demonstrated that it is possible to measure Exo-electron emission from MgO protective layer samples. Two specific experiments measured the doping rato dependence of the Exo-electron emission rate and Exo-electron emission properties with variation of MgO sample stimulation temperature. The Exo-electron emission is the nonequilibrium,non-stationary emission of low energyelectrons from the surface of solid during relaxation,after excitation /irradiation of the sample. In dielectricsenergy is stored in the form of electrons/holes trappedin the energy gap.Shallow trap aelectron of the MgO sample is sensitive to ambient temperature.In this paper, first we willconsider shallow electron traps from which electronscan be emitted by thermal effects.After that, we will describedoping materials that might enhancethe Exo-electron emission properties of MgO.

Poster Session 1


123October 11-15, 2010

[P1-53]

Effect of Sustain Pulse width on the Luminance and

D. Kim and J. Seo (Univ. of Incheon, Korea)

In this paper, in order to reduce the power dissipation by ions that pass through the cathode sheath with high energy in AC PDPs, we vary the width of sustain pulse and observe the

When the width of sustain pulse is very narrow(less than 0.5us),

[P1-54]

Fabrication of Highly Transparent Plasma Display Panel

H.-N. Choi and Y.-S. Kim (Hongik Univ., Korea)

To increase of optical transmittance for the transparent PDP panel, a new cell structure was attempted. In the structure, silver electrodes on front and rear plates were designed to locate at same position to minimize the reduction in optical transmittance. With the structure, panel transmittance approximately 50% was achieved.

Poster Session 1


124

[P1-55]

Optimum Osmium Doped Region for Color-Stability and High Efficiency Phosphorescent White Organic Light-Emitting Diode

F.-S. Juang, S.-H. Wang, Y.-S. Tsai, T.-C. Liao, C.-Y. Chen, M.-H. Gao (Nat’l Formosa Univ., Taiwan), Y. Chi (Nat’l Tsing Hua Univ., Taiwan), and H.-P. Shieh(Nat’l Chiao Tung Univ., Taiwan)

To obtain the high color-stability and high-efficiency white phosphorescent organic light-emitting diode (PHOLED), the insertion of hole-buffer layer and the location of orange-red dopant doped in the blue emissive were adjusted. Moreover, the effects of triplet exciton confinement, hole trapping, and carrier balance on white PHOLEDs will be also presented. By optimizing the device parameters and attaching an outcoupling enhancement film onto substrate, the white device with a

and CIE coordinate of (0.40, 0.39) can be achieved.

[P1-56]

Emitting Diodes using a Microlens Array

J. Y. Kim and K. C. Choi (KAIST, Korea)

We demonstrate a new approach to fabricate a microlens array attached to an organic light-emitting diode to improve the outcoupling efficiency. A Polydimethylsiloxane (PDMS) microlens array was fabricated by imprint lithography. Two kinds of photoresists were used to make a mold to imprint the microlens array. Using this simple and low-cost fabrication process, greater than 17% luminance enhancement was acquired on a large viewing angle range.

Poster Session 1


125October 11-15, 2010

[P1-57]

An Aromatic Imine Group Enhances the EL Efficiency

Emitter for OLEDs

Y. Park, J. Park (The Catholic Univ. of Korea, Korea), J.-H. Lee (Chungju Nat’l Univ., Korea), D. H. Jung (Insilicotech Co., Ltd. Korea), and C.-C. Wu (Nat’l Taiwan Univ., Taiwan)

This study describes not only the synthesis and characterization of a novel indenofluorene derivative, TP-EIF, for use as an emitting material in blue organic light emitting diodes (OLEDs), but also the comparison with TP-EPY in which a carbon atom was replaced by an imine N, and the effects of the structural changes on the OLED properties were examined. The FWHMs of the EL spectral bands were 54 nm for TP-EPY and 73 nm for TP-EIF, which demonstrated enhanced emission spectral purity. The external quantum efficiency of TP-EPY was 5.1%, which was more than twice the value for TP-EIF (2.19%).

[P1-58]

Diode using a Phosphine Oxide Based Host Material

S. E. Jang, K. S. Yook, and J. Y. Lee (Dankook Univ., Korea)

High efficiency blue phosphorescent organic light-emitting diodes (PHOLEDs) with simple device structure were fabricated using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC):2,7-Bis(diphenylphosphoryl)-9,9’-spirobi[fluorine] (SPPO13):iridium(III)bis(4,6-(di-fluorophenyl)-pyridinato-N,C’) picolinate(FIrpic) mixed host emitting layer. A high quantum

achieved in the simple blue device.

Poster Session 1


126

[P1-59]

Bipolar Host Materials based on Carbazole/Pyridine

H. J. Kang, K. H. Lee, S. S. Yoon (Sungkyunkwan Univ., Korea), H. M. Kim, J. H. Seo, and Y. K. Kim (Hongik Univ., Korea)

Novel host materials based on carbazole/pyridine derivatives were designed and synthesized for green phosphorescent OLEDs. Among those, 9-(3-(isoquinolin-1-yl)phenyl)-9H-

green phosphorescent OLED as host material. A device using Czpiq host material with the green phosphorescence dopant (tphpy)2Ir(acac) showed the external quantum and luminous

2, respectively.

[P1-60]

High Efficiency White Organic Light Emission Device with Blue and Orange Phosphorescent Materials

Y.-S. Seo and D.-G. Moon (Soonchunhyang Univ., Korea)

We have developed highly efficient white phosphorescent organic light-emitting device(PHWOLED) with three organic layer structure consisted of hole transport, emission and electron transport layers. We have achieved a maximum current

guest materials. The CIE coordinates and color temperature of WOLEDs were (0.41,0.42)and 3718K, respectively.

Poster Session 1


127October 11-15, 2010

[P1-61]

Dependence of Cs-Doped Electron Transport Materials on Light-Emitting Characteristics of Blue Phosphorescent Organic Light-Emitting Diodes

J. Lee, J.-I. Lee, J.-W. Lee, D.-H. Cho, J.-W. Shin, J.-H. Han, and H. Y. Chu (ETRI, Korea)

We investigated that the light-emitting performances of blue phosphorescent organic light-emitting diodes with three different electron transport materials, which are partially doped with Cesium(Cs) metal. We found that the device characteristics are very dependent on the nature of the introduced electron transport layer(ETL) such as HOMO/LUMO, triplet energy(T1),

improved up to 45.6 lm/W. Moreover, we also compared the device characteristics of blue PHOLEDs with or without LiF between Cs-doped ETL and Al Cathode.

[P1-62]

The Current Feedback Algorithm Based on Display Data for the Adequate Luminance

S.-C. Byun, J.-M. Kim, J.-S. Yoo, N.-W. Cho, S.-Y. Yoon, C.-D. Kim, Y.-K. Hwang, and I.-J. Chung (LG Display Co., Ltd., Korea)

The new AMOLED driving method was proposed to compensate luminance variation depend on environment conditions like temperature, irradiation light. The AMOLED current was controlled adaptively by gamma controller based on current feedback algorithm to get the adequate display luminance.

Poster Session 1


128

[P1-63]

Enhancement of Nanocrystal Quantum Dots based LED by Post Thermal Annealing

B.-H. Kang, J.-H. Kim, J.-S. Seo, S.-W. Lee, S.-H. Yeom, K.-J. Kim, Y. Heng, and S.-W. Kang (Kyungpook Nat’l Univ., Korea)

We report effects of the fabrication variables NQDs on characteristics of NQDs-based light emitting diodes. Annealing conditions of NQDs layer were chosen as fabrication process variables. Optimized annealing temperature is shown to improve maximum brightness by 20%. Therefore, additional annealing could enhance device characteristic. When the increased annealing temperature reached to 200 , current density and EL efficiency decreased because it exceeded the melting temperature of poly-TPD, 172~173 .

[P1-64]

Effect of Micro Patterns on the Light Extraction of Organic Light-Emitting Diode

H. J. Lee, H. K. Bae, L. S. Park (Kyungpook Nat’l Univ., Korea), S.-M. Ryu, B.-S. Kim (Samsung Electronic Co., Ltd., Korea), J. H. Kwon, S. K. Hwang (Yeungnam Univ., Korea), and D.-Y. Yang (KAIST, Korea)

This paper proposes the micro patterns on the organic light-emitting diodes (OLEDs) substrate for the improvement of light

and observed under the two different structure which is the patterned structure and non-micro patterned structure in the OLED devices. The light extraction is calculated by the ‘light

micro patterned structure is improved by about 190% than the non-micro patterned structure.

Poster Session 1


129October 11-15, 2010

[P1-65]

Improved Electroluminescent Efficiency of OLEDs by Pentacene as HIL/HTL and Plasma Treatment on ITO Anode

H. J. Choi, Y. W. Park, J. H. Choi, T. H. Park, E. H. Song, and B. K. Ju (Korea Univ., Korea)

To imp rove pe r f o rmance o f o rgan i c l i gh t - em i t t i ng diodes(OLEDs), devices with pentacene as the hole injection layer and hole transporting layer were fabricated. Plasma

to more advanced hole injecting and transporting for achieving

[P1-66]

Brightness Enhancement of Organic Light Emitting Diode using Optically Isotropic Surface Microstructures

W. Choi and S.-D. Lee (Seoul Nat’l Univ., Korea)

A new method of enhancing brightness of organic light emitting diodes (OLEDs) using optically isotropic surface microstructures is presented. The surface microstructures are found to effectively improve the optical extraction of emission light and to increase the current flow in OLED devices. Moreover, such brightness enhancement through the optically isotropic microstructures is independent of both the viewing direction and the wavelength of emission light. Our concept of using optically isotropic surface microstructures would be used for improving the performances of various multilayered optoelectronic devices.

Poster Session 1


130

[P1-67]

Highly Efficient Phosphorescent Dendrimer Based Organic Light Emitting Diode and its Peculiar Near-IR Electromer Emission

H.-J. Kim (Kongju Nat’l Univ., Korea), H.-D. Park, and J.-J. Kim (Seoul Nat’l Univ., Korea)

processed single emission layer OLED device is reported. The dendrimer carries carbazole functional groups which act as a

as an electron accepter at the other end of Ir(ppy)3 core. We have found this dendrimer device has very extraordinary near-

25 Cd/A.

[P1-70]

4-Views Flat Tabletop Display for Group Activity using View Control Film

T. Honda and K. Sakamoto (Konan Univ., Japan)

The authors have developed the display system which can be viewed from any direction. In this paper, we propose an omni-directional tabletop display system for cooperative activity on a round table.

Poster Session 1


131October 11-15, 2010

[P1-71]

Fast-Rewritable Plastic LCD with Photo-Alignment Technique

H.-C. Jau, T.-H. Lin, Andy Y.-G. Fuh (Nat’l Cheng Kung Univ., Taiwan), K.-T. Cheng, Y.-S. Lo, J.-Y. Chen, C.-W. Hsu, and C.-W. Cheng (Nat’l Sun Yat Sen Univ., Taiwan)

This work presents a photo-rewritable transmissive flexible liquid crystal display (PTF-LCD) based on the laser-induced

and rewritten by changing the direction of the writing laser beam with the temperature controlled. By using the IZO/PC substrates, the writing and erasing process can be achieved within 1 min with a high contrast.

[P1-72]

Fabrication of Flexible LCD using Freestanding Film Substrates

J.-Y. Cai, S. Lee, K.-H. Choi (KITECH, Korea), W.-J. Lee, and G.-H. Kim (ETRI, Korea)

We fabricated a reflective type of f lexible LCDs using freestanding plastic film substrates. Some fabrication issues

discussed in this work. Finally, we achieved well-controlled gap uniformity of 2” plastic LCD, and it shows good electro-optic characteristics.

Poster Session 1


132

[P1-73]

A Curved LCD with 0.15mm-thick Glass Substrates

J. H. Jo, H. B. Shin, J. S. Park, K. H. Lee, and J. K. Shin (LG Display Co., Ltd., Korea)

We have developed curved liquid crystal display with thin glass substrates. And we pretreated substrates in cell assembly for strengthening because thin glasses lower than 0.5mm thickness are too britt le for portable LCD products. A novel cell was prepared by chemical treatment on the glass surface after polishing 0.5mm thick glass to 0.15mm. The radius of curvature and deflection of curved slim LCD are 330 mm and 20 mm, respectively.

[P1-74]

Transparent FRP-based TN-LCD

G. H. Kim, W.-J. Lee (ETRI, Korea), and H.Chun (KITECH, Korea)

Transparent glass fiber reinforced plastic (FRP) substrate for flexible display was developed. In order to explore the

PM reflective LCDs were fabricated and their characteristics were investigated.

[P1-75]

Single Substrate Cholesteric Liquid Crystal Display Based on Photo Induced Phase Separation Method

S.-H. Jhuang, T.-H. Lin (Nat’l Sun Yat-Sen Univ., Taiwan), J.-P. Lu, C.-C. Hsu, and K.-T. Lin (ITRI, Taiwan)

This study demonstrated a single substrate bi-stable cholesteric liquid crystal display fabricated by the photo-polymerisation induced phase separation (PIPS) method. In this paper, we discussed the influence of surface treatment and process conditions on PIPS, and improve the reflectivity of single substrate Ch-LC display.

Poster Session 1


133October 11-15, 2010

[P1-76]

4inch qVGA Color EPD with Color Filter by using Charged Particles

G.-S. Ryu, J.-W. Hwang, and C.-K. Song (Dong-A Univ., Korea)

We fabricated color electronic paper displays (EPD) by using charged particles. It has a 320 x 240 array of pixels and 4 inch diagonal viewing area. The color EPD display is applying color filter technology. The color filter is designed stripe type. We analyze optical color properties of display panel. The Wx and

of color display is approximately 9.1%, so it is not enough for effective reproduction of color images yet. But the response time of fabricated EPD is very fast about 0.25msec.

[P1-77]

Preparation and Evaluation of White/Red Inorganic Inks for Electrophoretic Display

J.-I. Kong, M.-H. Kim, J.-H. Jung, H.-J. Kim, D.-M. Park, H. Jeong, J. S. Noh (NOROO Holdings Co., Ltd., Korea), and C. A. Kim (ETRI, Korea)

The electrophoretic white / red ink for EPD (electrophoretic display) was prepared and evaluated by combining charged red particle (iron oxide) with charged white particle (titanium oxide). White particle was coated with poly(MMA-co-EGDMA-co-AAmide) and red particle was coated with poly(Styrene-co-DVB-co-MAAcid). The coated particles were characterized by SEM and TGA. And the electric response time and color change were tested on the conductive ITO glass cell under ± 50 V/mm

Poster Session 1


134

[P1-78]

Bluish Green Ba2Si3O8:Eu2+ Phosphor and Orange ZnCdSe/ZnSe Quantum Dot for White Light-Emitting Diode Fabrication

W.-S. Song, H.-J. Kim, J.-H. Kwon, D.-E. Nam, and H. Yang (Hongik Univ., Korea)

Bluish green-emitting Eu2+-doped barium silicate (Ba2Si3O8:Eu2+)phosphor was synthesized via a sol id-state reaction. Ba2Si3O8:Eu2+ phosphor could be excited under near-UV wavelengths and exhibited a broad Eu2+ emission band. Phosphor-converted light-emitting diodes (pc-LEDs) were fabricated by combining Ba2Si3O8:Eu2+ phosphor with a near-UV (400 nm) LED. To fabricate white LEDs with a high color rendering index (CRI), a highly efficient orange-emitting ZnCdSe/ZnSe core/shell quantum dot (QD) was incorporated into the above Ba2Si3O8:Eu2+ phosphor-based pc-LED and their electroluminescent (EL) properties are described.

[P1-79]

[Awarded Paper - Outstanding Poster Paper]Luminescent Properties of a New Cyan-Blue Phosphor SrSi2S5:Eu2+ prepared by an Advanced Chemical Method

M. Nakamura, S. Tezuka, Y. Takatsuka, H. Kato, M. Kakihana (Tohoku Univ., Japan), and V. Petrykin (J. Heyrovsky of Inst. of Physical Chemistry, Czech Republic)

A series of samples in Sr-Si-S systems have been prepared by an advanced chemical method to search for new possible compositions utilizable for phosphor applications with the special focus on a Si-rich region, which led us to discover a new compound, not known previously, with a composition close to SrSi2S5. The new compound activated with Eu2+, SrSi2S5:Eu2+,exhibited a cyan-blue emission that has a main luminescent peak at 495 nm with the corresponding excitation maximum at 350 nm.

Poster Session 1


135October 11-15, 2010

[P1-80]

Luminance Improvement of Field Build-in Inorganic Electroluminescent Device

C.-C. Chang, Y.-H. Chien, M.-Y. Chuang, K.-F. Chen, J.-C. Ho, Y.-Y. Chang, and C.-C. Lee (ITRI, Taiwan)

for increasing the brightness of the inorganic electroluminescent (IEL) device. A novel IEL device can be achieved by coating with IEL structure with a film with an internal electric field effect, called Field-enhanced film, which can be produced by high temperature corona discharge process. Through the

actually increase the IEL brightness from 312nits to 556 nits at the same operating condition.

[P1-81]

[Awarded Paper - Outstanding Poster Paper]Low-Temperature Synthesis of Zn2SiO4:Mn Phosphor with High Purity and Strong Emission by a Homogeneous Precipitation Method in Combination with Novel Water-Soluble Silicon Compounds

K. Yoshizawa, Y. Suzuki, H. Kato, and M. Kakihana (Tohoku Univ., Japan)

This paper reports on the synthesis of Zn2SiO4:Mn2+, a green phosphor, by a homogeneous precipitation method as a part of our synthetic research on silicate-based phosphors by an aqueous solution process employing the water-soluble silicon compounds (WSS), which we have developed recently. The homogeneous precipitation method involving WSS as a Si source yielded a single-phase Zn2SiO4:Mn2+ after a heat-treatment at 800℃.

Poster Session 1


136

[P1-82]

A Novel Red Phosphor Gd(Mg,Zn)B5O10:Mn with Short Decay Time

S.-W. Tae, S. Choi, and H.-K. Jung (KRICT, Korea)

Gd(Mg,Zn)B5O10:Mn red phosphor was synthesized, and its photoluminescence properties were investigated. The Gd(Mg1-

x-yZnx)B5O10:yMn phosphor under vacuum ultraviolet excitation showed a strong red emission at 630 nm corresponding to the transition of Mn2+ ions in octahedral sites. The decay time of this red phosphor was less than 1 ms, which is favorable to 3D PDP application.

[P1-83]

Fast-Decaying with Spherical Shaped YBO3:Eu3+ Red Phosphors for 3D Displays

B.-Y. Park, S. Choi, H.-K. Jung (KRICT, Korea), and C. S. Hong (Korea Univ., Korea)

Submicron size with spherical shaped red-emitting YBO3:Eu3+

phosphor was fabricated by using a solvothermal method. The resultant powder phosphors were analyzed in terms of shape and decay property comparing with the commercial red phosphor. Solvothermally grown YBO3:Eu3+ phosphor with fast-decaying property can be considered as very promising luminescent materials for new emissive 3D displays such as 3D PDPs.

Poster Session 1


137October 11-15, 2010

[P1-84]

Photoluminescence of ZnS:Cu,Cl Nanocrystals and its Ap-plication to Alternating Current Driven Electrolumines-cence Device

J. Y. Han, D. Kim, H. Kim, and D. Y. Jeon (KAIST, Korea)

ZnS:Cu,Cl nanocrystals (NCs) which shows greenish blue PL emission was synthesized by using solution chemical reaction method. The PL emission wavelength of synthesized ZnS:Cu,Cl NCs depends on the solution dispersed with it. In case of water as dispersion solution, the emission wavelength from NCs was shifted to longer wavelength compared to those of bare solution

NCs EL device was fabricated by using screen printing method. Its EL emission intensity showing blue emitting color (~470nm) was increased with increasing applied voltage and its frequency.

[P1-85]

Chemical Synthesis of Eu2+-doped Barium Silicate Phosphors by Advanced Aqueous Solution Method using Novel Water-Soluble Silicon Compound

C. Yasushita, H. Kato, and M. Kakihana (Tohoku Univ., Japan)

The single phase BaSi2O5 doped with Eu2+ was successfully synthesized by an aqueous solution method using a novel water-soluble silicon compound in combination with NH4Cl

BaSi2O5:Eu2+ was ~2 times higher than that of a sample prepared by a solid-state reaction method.

Poster Session 1


138

[P1-86]

Synthesis of Ba1-xEuxSi2O2N2 and its Luminescent Properties

K. S. Choi, H. S. You, J. P. Lee, and C. H. Kim (KRICT, Korea)

The nitride and nitridosilicate phosphors which are well known as phosphor materials for white LEDs were reported that have high luminescent properties and thermal stability. In this paper, Ba1-xEuxSi2O2N2 was prepared by simple process under the reduction atmosphere. Ba1-xEuxSi2O2N2 phosphors show two main luminescent peaks at 495 nm and 590 nm. Consequently, these two phosphors and a green phosphor are possible to apply to white LEDs with high CRI values.

[P1-87]

Photoluminescent Properties of New Eu2+-Activated Sodium Calcium Silicate Phosphors Prepared by Advanced Aqueous Solution Method

T. Yamaguchi, H. Kato, and M. Kakihana (Tohoku Univ., Japan)

In the search for new phosphors among various compounds in sodium calcium silicates, two new materials, Na2Ca3Si2O8

and Na2Ca6Si4O15, were discovered as hosts for Eu2+-activated phosphors. They exhibited green emissions at 522 and 533 nm, respectively, with the corresponding excitation maxima at 327 nm.

Poster Session 1


139October 11-15, 2010

[P1-88]

Photoluminescence Characteristics and Chemical Com-

at Low Temperature

J.-D. Hwang, K.-M. Lee, K.-S. Keum, S. Jang, Y.-J. Lee, M. Han, and W.-S. Hong (Univ. of Seoul, Korea)

Hydrogenated silicon nitride (a-SiNX:H) thin films deposited at low substrate temperature (200℃) show the different bonding configurations and photoluminescence characteristics which

the gas ratio R of nitrogen to silane during the deposition. The composition of SiNX

infrared spectroscopy (FTIR) and photoluminescence (PL) spectroscopy. We observed FTIR peak position were changed and PL energy variation with gas ratio R.

[P1-89]

Superior High Quality 55” S-IPS LCD in Outdoor Environ-ment

E.-D. Kim, S.-H. Park, J.-K. Kang, J.-S. Park, S.-H. Yoon, K.-H. Lee, and J. K. Shin (LG Display Co., Ltd., Korea)

Recently, Public Display(PD) as a Digital Signage Should be needed the high brightness to achieve a good outdoor readability. But LCD used in PD usually has a low color gamut to increase brightness. We have developed 55inch S-IPS LCD with a wide viewing high color gamut as well as high brightness

The new LCD shows a brightness of 2000 cd/m2 and color gamut of 72% in wide viewing angle.

Poster Session 1


140

[P1-90]

The Optimization of Level Shifters for LCD with a-Si Gate Driver

B. S. Kim and N. Smith (Texas Instruments, Germany)

ASG, a-Si gate driver, is the cost saving technology for LCD with which the system needs standalone level shifters. In order to maximize the cost saving, the level shifters need to be optimized for LCD. The optimum design of level shifter provides the lowest solution cost, the high reliability and best picture quality.

[P1-91]

Improvement of Motion Blur through Impulsive LED Backlight and New Data Processing

S.-H. Lee, J. Y. Pyun, B. S. Min, S. Y. Kim, B. G. Lee, D. H. Lee, K. D. Kim, M. C. Jun, and I. J. Chung (LG Display Co., Ltd., Korea)

In this study, we have developed high performance LCDs (Liquid Crystal Displays) through impulsive LED (light emitting diode) backlight and new data processing. It has fast MPRT (motion picture response time) and good uniformity characteristics of MPRT with the 47 inch size. The motion picture quality of this sample is superior to that of MEMC (motion estimation and motion compensation) 240Hz, and the cost of this sample is lower than that of MEMC 240Hz. This technology can be applied to mass production and it will be realized within this year.

[P1-92]

Design of Integrated a-Si Gate Driver for TFT-LCD Panel

C.-D. Tu, M.-C. Chuang, and C.-L. Lin (Nat’l Cheng Kung Univ., Taiwan)

A new stable amorphous silicon (a-Si) TFT gate driver circuit is

The proposed driving scheme has 50% duty ratio which can extend the lifetime of the pull-down TFTs. The measured results show that the proposed circuit has high stability and is suitable for TFT-LCD application.

Poster Session 1


141October 11-15, 2010

[P1-93]

iDP(internal Display Port) Interface for TFT-LCD Applications

S. Kim, C. Lee, S. Kim, D. Park, and H. Lee (LG Display Co., Ltd., Korea)

iDP is a new open standard for system interface between SoC(System-On-a-Chip) board and TFT-LCD display module. Its protocol is based on DisplayPort 1.1a by VESA (Video Electronics Standard Association), but the iDP uses higher data rate and is optimized to LCD display interconnection instead of box-to-box system communication. Its feasibility and performance have been tested and evaluated to compare with conventional LVDS interface. It shows promising benefits and better performances to replace LVDS interface technologies with respect to future display demands of higher resolution format and higher frame rate.

[P1-94]

Monocular 3D Display Unit using Polypyrrole Light-Weight Actuator for Image Shift Device

Y. Kodama and K. Sakamoto (Konan Univ., Japan)

The human vision system has visual functions for viewing 3D images with a correct depth. These functions are called accommodation, vergence and binocular stereopsis. Most 3D display system utilizes binocular stereopsis. The authors have developed a monocular 3D vision system with accommodation mechanism, which is useful function for perceiving depth.

[P1-95]

Invisible Code Display for Eye Contact Communication of Mobile Robots

T. Furukawa and K. Sakamoto (Konan Univ., Japan)

An invisible code is one of the useful technologies for a computer interaction. In this paper, we propose a method to display invisible codes using LCD panels and to detect a polarized symbol image with a conventional CCD camera.

Poster Session 1


142

[P1-96]

3D Position Measurement for Automatic Mobile Robot Control and Indication

K. Ohmori and K. Sakamoto (Konan Univ., Japan)

Our developed mobile robot can move itself to indicated goal point by an operator. A trial robot system provides us two indication methods. One is how to indicate as the operator put a

through closed-circuit television like the operator indicates the goal point on a video monitor. The mobile robot decides a route to the goal according to a behavior decision algorithm. The automatic mobile robot moves itself so as to shorten a distance from current residence to goal in consideration of a direction to the goal.

[P1-97]

M. Cho and J. You (Hongik Univ., Korae)

images by histogram patterns. The image selection is based on high brightness pixel ratio and pixel distribution that can be easily estimated. Image qualities such as dynamic contrast ratio are evaluated by eye tests.

Poster Session 1


143October 11-15, 2010

[P1-98]

Systematic Methods for Recovering Optimum Pixel Clock for Internal DisplayPort

C. Lee, S. Kim, S. Kim, D. Park, and H. Lee (LG Display Co., Ltd., Korea)

iDP is a next generation interface between system-on-chip (SoC) and timing controller (TCON), which provides high speed serial data rate. iDP embeds clock in data stream to lower radiated electro-magnetic interference (EMI) level. Since iDP protocol only transmits clock information over the main link,

a transmitted pixel clock at the receiver side. For such purpose, methods applying use of data rate throttling (DRT) and adjusting

developed.

[P1-100]

A Simple Data Embedding Scheme for Spatial-Domain Images with Low Distortion

H.-K. Ku (Fortune Inst. of Tech., Taiwan), and H.-S. Koo (Ming-Hsin Univ., Taiwan)

We propose a simple data hiding algorithm, the one’s complement substitution process, for spatial-domain still images. Different from the LSBs substitution and optimal pixel adjustment process (OPAP), our method limits the distortion of each pixel within 2 bits while 3 bits (k=3) or 4 bits (k=4) of information are to embed/replace the original 3 or 4 LSBs, at the cost of one extra bit (k=3) or two bits (k=4) for recovering if the one’s complement process has been performed. Experimental results show the proposed method improves in average 10.2% (for k=3) and 27.19% (for k=4), in PSNR respectively, as compared with the OPAP, for the benchmark images.

Poster Session 1


144

[P1-101]

A Noble LCD Design for Broadcasting Display

J.-Y. Ahn, S. H. Yu, S.-G. Lee, H.-I. Han, M. S. Jo, S.-J. Lee, J. Lim, B. Y. Lee, Y. K. Hwang, and I.-J. Chung (LG Display Co., Ltd., Korea)

32” FHD LCD for broadcasting display system was researched. In order to satisfy high standard specification of broadcasting display, design was carried out at the consideration of optimum performance of panel, BL, mechanical parts, circuit so that characteristics of wide color gamut, improved color depth, wide viewing angle, improved white uniformity and motion blur reduction without frame rate control could be achieved. As a result, broadcasting LCD that can be commercialized was developed.

[P1-102]

A Small CMOS Temperature Sensor with a Inaccuracy of -0.6℃~1.1℃ From 25℃~115℃

T.-S. Park and S.-G. Park (Hanyang Univ., Korea)

The paper presents a very small size temperature sensor designed using a 0.35um CMOS process. Core transistors of the sensor operate in the intermediate-inversion region

Measurement result of the temperature sensor represents -0.6℃~+1.1℃ of errors in 25℃~115℃ temperature range after of two-point calibration. This temperature sensor can be placed in the active pixel area or driving circuit area which needed temperature compensation.

Poster Session 1


145October 11-15, 2010

[P1-103]

Power Optimization of Thermally Actuated Organic Display by Pulse Width Modulation Technique

J.-M. Choi, Y.-K. Choi (KAIST, Korea), O. Yarimaga, B. Yoon, and J.-M. Kim (Hanyang Univ., Korea)

A power optimization method, pulse width modulation (PWM) technique, is proposed for a thermochromic organic display

thermally activating material. Heat generation of micro heaters

by dc voltage supply. The pulse wave of about 30% duty ratio is the most appropriate for power minimization. In addition to the power reduction, pulse wave activation can circumvent the overheating problem.

[P1-104]

[Awarded Paper - Outstanding Poster Paper]Patterned Alignment of Liquid Crystalline Polymer using Nonpolar-Solvent-Induced Anisotropic Tensile Effect

K.-W. Park, C.-S. Park, K.-I. Joo, G. Kwak, S.-W. Kang, and H.-R. Kim (Kyungpook Nat’l Univ., Korea)

We propose a novel patterning method for liquid crystalline polymers (LCPs) by using an anisotropic stress effects on a patterned elastomeric polymer film. By controlling the anisotropic stress with the geometric patterns of the elastomeric film and the swelling effects by non-polar solvent absorption, the ordering can be effectively patterned in LCPs even with high molecular weight.

Poster Session 1


146

[P1-105]

Effect of O-vacancy on the Device Instability of Amorphous Zinc-Tin-Oxide Thin-Film-Transistors

B. Ryu and K. J. Chang (KAIST, Korea)

We investigate the defect properties of amorphous zinc-tin-oxides through density functional calculations. In a-ZTO TFTs, O-vacancy is an electrically inactive defect under positive bias stress, whereas it is easily ionized under light illumination due to its shallow charge transition level.

[P1-106]

Transmittance enhancement in ITO/Ag/ITO Transparent Electrode using Surface Plasmon

S. H. Oh, S.-M. Lee, and K. C. Choi (KAIST, Korea)

In this paper enhanced transmittance was demonstrated in an ITO/Ag/ITO structure using a surface plasmon. The surface plasmon could be efficiently generated by forming corrugated surface via annealing process. The annealing process, conducted at 200 °C, gives a maximum of 17 % transmittance enhancement in Ag film and greater than 5 % transmittance enhancement in the ITO/Ag/ITO structure with wavelengths of 540 nm and 590 nm, respectively.

[P1-107]

[Awarded Paper - Outstanding Poster Paper]Rotational Viscosities of a Mixture Comprising Four Different Kinds of Liquid Crystals

J.-S. Kim, M. Jamil, F. Ahmad, J. W. Lee, S. W. Park, Y. J. Jeon (Konkuk Univ., Korea), J. E. Jung, and J. E. Jang (SAIT, Korea)

We have obtained rotational viscosity values of E7 comprising 5CB, 8OCB, 7CB and 5CT at various temperatures using molecular dynamics computer simulation. Director mean squared d isplacement is acquired f rom the squared displacement of the mean director as presented before study, J. S. Kim, IMID’09 Technical Digest, p.607 (2009).

Poster Session 1


147October 11-15, 2010

[P1-108]

Organic-Inorganic Hybrid OTFT Gate Insulator using Dip-Coating Method

J. Lee, J. Hwang, Y. Kim, E. Lee, and H. Kim (Kyung Hee Univ., Korea)

Ultrathin film thickness and high dielectric constant of gate insulate material for organic thin film transistor(OTFT) are required to have better performance. In this study, gate insulators with low leakage current and high dielectric constants were obtained by organic-inorganic hybrid materials with various metal alkoxides(Ti, Zr, Ta) and acrylate polymers. The concentration of solution and dipping speed can control the

coating method, dip-coating method gave much thinner dielectric thickness resulting in low operating voltage of fabricated OTFT with pentacene as semiconductor. Furthermore, organic-inorganic hybrid materials show better frequency performances.

[P1-109]

Crystallized poly-Si Using a Back-side Self-Heating Layer of a-Si

Juan Li, C. Yin, S. Ding, M.-Ying, Z. Meng, C. Wu, S. Xiong (Nankai Univ., China), and H. S. Kwok (Hong Kong Univ. of Science and Tech., Hong Kong)

Crystallization of a-Si by doubled frequency YAG laser using a self-heating layer technology was proposed in this paper. The

were enhanced up to almost two times by using the self-heating layer technology. This technology has a dual heating effect: heat-retaining and self-heating with an easier process and wider process window, compared to the conventional capping-layer technology.

Poster Session 1


148

[P1-110]

Effect of N Doping on Solution-Processed Indium Zinc Tin Oxide Thin Film transistors

B.-J. Kim, H.-J. Kim, S.-M. Jung, T.-S. Yoon, Y.-S. Kim, and H. H. Lee (Myongji Univ., Korea)

Thin film transistors TFTs with nitrogen doped indium zinc tin oxide channel layer were fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride (SiNx) was used as a gete dielectric material for the TFT. Source and drain electrodes were deposited on the SiNx layer and IZTO:N layer was formed by spin-coating method.

[P1-111]

A Study On Optimization Of UV-Sensitive Sealant For the Narrow Bezel LCD

D. Park, H. Lee, J. Park, K. Lee, and J. Shin (LG Display Co., Ltd., Korea)

We have developed the new technology about scribing on sealant line, which can be attained narrow width by using UV-sensitive material to seal between TFT and CF glass. Sealant line width can be adjusted by UV-blocking layer design. 0.5mm distance from blocking layer enhanced the possibility of scribing on sealant automatically. The reducing sealant line width will play a bigger role in making narrow bezel LCD products. The existing sealant line has 1.8mm width, but we can achieve below 1.0mm.

Poster Session 1


149October 11-15, 2010

[P1-112]

Temperature Induced Instability of Passivation-Free Amorphous Indium Zinc Oxide (a-IZO) Thin Film Transistor

E. Chong, Y. S. Chun, K. C. Jo, S. H. Kim, D. W. Jung, and S. Y. Lee (KIST, Korea)

We compared the instability of the temperature and bias temperature stress on the electrical device of amorphous In-Zn oxide (a-IZO) thin film transistor (TFT). Thermal stress conditions were chosen from 293K to 398K, whereas the thermal activation energy can be calculated as a function gate voltage. And then, bias temperatue stress conditions were on-current state (a drain current of 3uA at VDS = 10 V) of TFT. The thermal activation energy of the a-IZO channel layer was

[P1-113]

Study of the Relationship between SiH Rotational Temperatrue and Film Crystallinity Deposited by SiH4-H2

Plasma

S. Y. Moon, W.-Y. Kim, S. Ahn, and H. Lee (LG Electronics Advanced Research Inst., Korea)

Relationship between rotational temperature obtained from SiH

in various plasma operation conditions. As increasing input power and H2/SiH4 gas ratio, both the rotational temperature and crystallinity were increased. On the other hand, the correlation between the rotational temperature and crystallinity was not observed with respect to gas pressure variation. Based on the result, the measurement of rotational temperature would be

Poster Session 1


150

[P1-114]

Temperature Dependence of Liquid Crystal Molecular on Dye-Sensitized Solar Cells

W.-S. Kang, S.-Y. Hur, G.-D. Lee (Dong-A Univ., Korea), and S.-H. Jin (Pusan Nat’l Univ., Korea)

power-conversion efficiency (PEC) in a quasi solid-state dye-sensitized solar cell (DSSC). The scalar order parameter of nematic LC is 0.5 – 0.7 at room temperature. This implies that most of the LC molecules are aligned in the similar direction to one another. We fabricated a quasi solid-state DSSC which contained nematic LC or not and measured the PEC, Jsc, and Voc changing a temperature. From the experimental results, we

DSSC in a quasi-solid state DSSC.

[P1-115]

Bulk-Heterojunction Photovoltaic Cells using Room-Temperature Tetrathiafulvalene Liquid Crystal

S.-Y. Park, S.-M. Kim, M.-H. Lee, S.-H. Lee, E. Lee (Chonbuk Nat’l Univ., Korea), and L. Wang (Univ. of Science and Tech. Beijing, China)

The bulk-heterojunction solar cell was fabricated from a discotic liquid crystal based on tetrathiafulvalene (TTF) structure as an electron donor and PCBM as an electron acceptor. Photovoltaic characteristics of the resulting device were investigated with respect to the transition temperature of liquid crystal as well as morphology.

Poster Session 1


151October 11-15, 2010

[P1-116]

Effect of Oxygen and Diborane Gas Ratio on P-type Amorphous Silicon Suboxides Layer

J. Park, S. Park, S. Lee, Y. Kim, C. Shin, S. Baek, D. Gong, and J. Yi (Sungkyunkwan Univ., Korea)

We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N2O by

solar cell, the p-type layer should have a high Eopt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted Eopt of the p-type layer by varying the N2O and B2H6 gas ratio. The p-type a-SiOx opt

values of about 1.99 eV.

[P1-117]

for Single Crystalline Silicon Solar Cells

D. Gong, D. Yang, J. Lee, J. Yi (Sungkyunkwan Univ., Korea), and B. Ha (Innovation Silicon Co., Ltd., Korea)

advantages over single-layer antireflection (SLAR) coatings due to their coverage of a broad range of the solar spectrum. In this paper, properties of SiNx DLAR coatings are studied. Using the same material is more cost effective than using different materials. The total thickness of SiNx/SiNx films is kept at 80 nm. Single crystalline solar cells are fabricated with different thicknesses of the top and bottom layers. The solar cell with 60 nm / 20 nm SiNx DLAR coatings has 17.45% efficiency while

Poster Session 1


152

[P1-118]

Positive Bias Effects of ZnO:Ga Films on PEN Substrate

K. J. Ahn, G. Y. Yeom (Sungkyunkwan Univ., Korea), J.-Y. Kim, S.-B. Park, D. Lim (Chungju Nat’l Univ., Korea)

In this paper, we report an investigation into the feasibility of gallium-doped zinc-oxide (ZnO:Ga) films as transparent conducting oxide layers for solar cell applications. ZnO:Ga

sputtering from a zinc-oxide (ZnO) target mixed with 4 wt.% Ga2O3. The effects of positive substrate bias on the structural, electrical properties were studied. The electrical resistivity of the

electrical resistivity as low as 9.02×10substrate bias of +10 V.

[P1-119]

[Awarded Paper - Outstanding Poster Paper]Effect of DMF Modulated PEDOT:PSS Buffer Layer on P3HT:PCBM:ZnO Bulk Heterojunction Organic Solar Cells

S. H. Oh, K. M. Kim, J. Jung, A. Moujoud, and H. J. Kim (Yonsei Univ., Korea)

In th is research , the e f fec t o f modu la ted po ly (3 ,4 -ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) buffer with N,N-dimethylformamide (DMF) in organic solar cell was investigated on the conductivity. The resistivity of pristine PEDOT:PSS is 7.87 x 10-1

x 10-2

PEDOT:PSS film can improve short circuit current density of solar cells due to their low resistivity This method for increasing performance of organic solar cell can contribute to get high efficiency in the conventional fabrication process of organic solar cells.

Poster Session 1


153October 11-15, 2010

[P1-120]

Effect of the Substrate Temperature on the Indium Diffusion of a-Si Substrate for HIT Cells

H. Park, K. Jang, S. Jung, S. Ahn, J. Cho, and J. Yi (Sungkyunkwan Univ., Korea)

We investigated the indium diffusion into the substrate in RF magnetron sputtered ITO thin films as a function of the

ITO film makes crystalline and denser. XPS result shows the increase in the excess oxygen atom corresponding to the

[P1-121]

Work Function Variation of ITO According to Oxygen Partial Pressure and its Application to HIT Solar Cell

J. Cho, S. Ahn, H. Park, D. Gong, and J. Yi (Sungkyunkwan Univ., Korea)

The work function at the ITO/p-a-Si:H interface is one of the most important factors limiting the performances of HIT solar cells. In order to study this effect, the property of ITO single layer which is deposited in only Ar atmosphere and the one deposited in Ar and tiny oxygen content in it were investigated. And the property of HIT solar cell where this ITO single layer is applied is also analyzed.

Poster Session 1


154

[P1-122]

Synthesis of Novel Asymmetric Oligomers Based on Oligothiophene-Naphthalene Molecules and Solution-Processable p-Channel Organic Thin Film Transistors

S. H. Jang, M.-G. Shin, J. H. Park, Y.-H. Kim, S.-G. Lee, S.-K. Kwon (Gyeongsang Nat’l Univ., Korea), D. S. Chung, and C. E. Park (POSTECH, Korea)

A series of novel thiophene-naphthalene based asymmetric oligomers for organic thin film transistors (OTFTs) were synthesized by Suzuki cross-coupling reaction between 2-bromo-6-decylnaphthalene and 2-decylthiophene, 2-decyl bithiophene, or 1-decylbenzene, respectively. Remarkably, AON-1 and AON-3 showed good solubility in common solvents.

1.4 × 10-2 cm2/Vs for AO, 1.5 × 10-2 cm2/Vs for AON-1, and 3.7 × 102 cm-2/Vs for AON-3.

[P1-123]

Analysis of Discharge Mode with Dual Sustain Discharge

H. D. Park, J.-K. Lim, B.-T. Choi, J. H. Kim, and H.-S. Tae (Kyungpook Nat’l Univ., Korea)

studied that can produce the discharge twice at one sustain pulse. The IR emission, discharge current, and ICCD image are examined in the dual sustain discharge mode. It is observed

dual sustain discharge mode in 6-in. test panel.

Poster Session 1


155October 11-15, 2010

[P1-124]

Synthesis and Characterization of Narrow-Band-Gap Copolymers Containing Alkoxyanthracene as Electron Donor for Organic Photovoltaic Applications

S.-O. Kim, P. S. Kim, H. J. Koh, S.-K. Kwon, Y.-Hi Kim (Gyeongsang Nat’l Univ., Korea), D. S. Chung, H. Cha, C. E. Park (POSTECH, Korea)

A new electron donor polymer (PTFTEA) was synthesized by the Suzuki coupling reaction. PTFREA has both high molecular weight (Mn 7.8 x 103 g/mol PDI 1.47) and narrow band gap. We found optical wavelength absorption using UV spectrum at 618

narrow band gap (1.39 eV). Moreover, we obtain HOMO energy of PTFTEA at -5.36 eV by cyclic voltammetry (CV) studies, calculated LUMO using band gap. As a results, PTFTEA has narrow band gap, so that to be suitable for performance (1.1%).

156

43. Color/Human Factor/Display MeasurementⅠ

- Chair: C.-W. Kim (Inha Univ., Korea)- Co-chair: Y. K. Park (Samsung Electronics Co., Ltd., Korea)

[43-1] 09:00

Depth Scaling Method using Visual Fatigue Profile for Visual Comfort

Y. Kim, D. Nam, G. Sung, J. Park, D. Park, and C. Kim (Samsung Electronics Co., Ltd., Korea)

This paper proposes an adaptive depth scaling method on the basis of an analysis of the visual fatigue information of 3D content. In order to minimize visual fatigue without sacrificing the realistic perception of depth, we define a static comfort zone(SCZ) and a temporary comfort zone(TCZ). Further, by

user evaluation test reveals that the visual fatigue experienced by the users is reduced by 70% after depth scaling.

[43-2] 09:20

Perceptual Brightness Comparison of 3D Shutter Glasses and Dependence on Surrounding Illuminance

B. Choi, D. Choi , S. Kim, S. Lee, H. Chung, and S. S. Kim (Samsung Mobile Display Co., Ltd., Korea)

Compared to 2D TV, luminance transmitted through 3D TV shutter glasses can be reduced by a factor of 2 or more due to higher driving frequency and transmittance loss of the shutter glasses. However, light loss through the shutter glasses also changes the surrounding view including perception of illuminance. In display devices, both white level brightness and black level brightness are important, so that for assessment of simultaneous contrast, both white and black levels must be evaluated. This study compares perceptual brightness dependence on surrounding illuminance between 2D displays and 3D displays with shutter glasses. Considering simultaneous contrast, 50-60 cd/m2 of 3D luminance through glasses was found to correspond to 100 cd/m2 of 2D luminance. New 3D evaluation methods will be standardized based upon this study.

Room 305

157October 11-15, 2010

43. Color/Human Factor/Display MeasurementⅠ

[43-3] 09:40

Brightness Function for Extended Surround Luminance Range

Y. S. Baek, H.-S. Kim, and S.-O. Park (Daejin Univ., Korea)

This study aims to obtain brightness function under various surround conditions. The surround conditions were changed from dark to over bright. Psychophysical experiments were carried out to investigate the relation between perceived brightness and luminance using magnitude estimation method. From this experiment, nonlinear brightness functions were obtained in log-log scale. As a result, we found out that the perceived image contrast is highest at surround ratio of 1 and it means that perceived image contrast increases as surround luminance increases but it decreases from average surround

our previous work.

[43-4] 10:00

Image-Quality Evaluation of Mobile Displays

K.-H. Shin, J. J. Yoo, J. W. Jang, H. Hong, and H.-H. Shin (LG Display Co., Ltd., Korea)

A series of visual assessments was conducted using four different mobile LCDs and OLEDs so that the image quality of the mobile displays was evaluated and compared based on visual perception rather than physical properties. In this study, it was confirmed that the trend of the image quality could not be simply explained by electro-optical properties. Thus an attempt to consider the image-quality attributes was made. Furthermore, it was also found that naturalness is the most major factor affecting the overall image quality among image-quality attributes such as naturalness, colorfulness, contrast, sharpness, etc.

Room 305

158

44. PDP TV Technology

- Chair: H. Kajiyama (Hiroshima Univ., Japan)- Co-chair: E. H. Choi (Kwangwoon Univ., Korea)

[44-1] 09:00

[Invited]Productivity Technologies

Y.-G. Kang, S.-K. Kwon, G.-S. Kim, J.-H. Kim, J.-H. Lee, H.-S. Shim, J.-S. Kwon, S.-Y. Park, C.-H. Choi, K.-Y. Kwon, T.-Y. Kim, D.-H. Yoon, H.-G. Jin, S.-B. Jung, Y.-T. Ryu, J.-K. Choi, and K.-H. Park (LG Electronics Inc., Korea)

We present high reliability technology with a new protective layer of high secondary electron emission coefficient and stable exo-electron emission. We also introduce a statistical predictive modeling of PDP performance to maximize synergy between R&D and manufacturing. The methodology provides a ‘robust design’ for better quality and ‘faster launching’ of mass production.

[44-2] 09:25

[Invited]Manufactured by using “All-In-Vacuum” Process

T. Yano, K. Uchida (ULVAC, Inc., Japan), K. Suesada, S. Miyamoto, T. Shinoda, and H. Kajiyama (Hiroshima Univ., Japan)

using the “all-in-vacuum” process without exposing a protecting layer to ambient air. By using all-in-vacuum process, it is possible to keep primary discharge voltage and to shorten aging time. The discharge voltage of SrCaO-, CaO- and MgCaO-PDP are much lower than that of MgO-PDP. In conclusion, our all-in-vacuum process has big advantage for the perfect manufacture

Room 302

159October 11-15, 2010

Room 302

44. PDP TV Technology

[44-3] 09:50

[Invited] Current Issue of 3D Technology and Solution Subject for 3D PDP

S. Moon, D. Kim, J. Lee, J. Ra, M. Jeon, and K. Choi (LG Electronics Inc., Korea)

Plasma display panel (PDP) can easily realize both 2D picture and 3D effect by changing the phosphor material and algorithm. We developed the 3D PDP TV with less than two point five

year. This paper introduces our technology of 3D PDP TV and discusses the subject to advance 3D PDP TV.

160

45. Green Display Materials for Future ApplicationsⅡ

- Chair: H.-K. Kim (Kyung Hee Univ., Korea)

[45-1] 09:00

[Invited] Transparent Electronic Materials fabricated by Ionized Physical Vapor Deposition Method

W.-S. Cheong, M.-H. Lee, J.-Y. Bak, S. M. Chung (ETRI, Korea), S.-J. You, J.-H. Kim (KRISS, Korea), and Y.-S. Kim (Daeki Hi-Tech Co., Ltd., Korea)

Transparent electronic materials have been fabricated by ionized physical vapor deposition method. Properties of TCOs and oxide semiconductors were greatly affected by the electron density of plasma, which could provide a clue for obtaining high

[45-2] 09:25

[Invited] Designing Novel Oxide Semiconductors for Next Generation Active Matrix Backplanes

J.-S. Park (Dankook Univ., Korea), J. Lee (Samsung Electronics Co., Ltd., Korea), and C. J. Kim (SAIT, Korea)

Various oxide semiconductors were deposited to investigate their electronic properties and instability ability in applying as thin film transistors. The high electronegative element (such as Zr and Hf) in oxide semiconductors may affect to suppress crystal-growth, carrier generation and device instability. The radius of element as a dopant is also a critical role to control the device instability since it might be a lattice distortion. It may guide that oxide semiconductors could be designed with two rules to control their device performance and instability.

Room 211B

161October 11-15, 2010

45. Green Display Materials for Future ApplicationsⅡ

[45-3] 09:50

[Invited] Materials and Components for Flexible AMOLED Displays

D. Jin, S. An, H. Kim, Y. Kim, H. Koo, T. Kim, Y. Kim, H. Min, H. Chung, and S. S. Kim (Samsung Mobile Display Co., Ltd., Korea)

Materials and components for flexible AMOLED displays are reviewed in this paper. Plastic substrates need high thermal

production compatibility. Flexible modules such as chip on flexible substrate, slim polarizer, and touch screen panel are

Room 211B

162

46. LED/BLU/Lighting Ⅰ

- Chair: M. Nakamoto (Shizuoka Univ., Japan)- Co-chair: Y.-R. Cho (Pusan Nat’l Univ., Korea)

[46-1] 09:00

[Invited] Long-Life Carbon Nanotube Cathode with Various Surface Treatments for Backlight Unit and Lighting

M. Takai, T. Takikawa, H. Oki, K. Murakami, S. Abo, and F. Wakaya (Osaka Univ., Japan)

Carbon nanotube (CNT) cathodes with high emission current and long lifetime have been realized using laser surface treatments and pulsed aging for backlight unit and lighting applications. CNTs with diameters of 10 or 100 nm have been screen printed on an ITO/glass substrate and treated by a

times of CNT cathodes treated by tape peeling have been only several hours at a dc operation, whereas those treated by laser irradiation exceeded 100 hours, corresponding to 100,000 hours at a duty ratio of 1/1000.

[46-2] 09:25

Stabilization of Field Emission of Carbon Nanotube Emitters by using FET Switching

W. M. Bae, J. H. Ryu, N. Y. Bae, H. M. Oh, E. H. Lee, A. N. Ha, J. Jang, and K. C. Park (Kyung Hee Univ., Korea)

voltage are considered as hurdles for application. The CNT emitters with field-effect transistor (FET) are very useful to

emission stability of CNTs which is connected to drain of FET were discussed.

Room 301

163October 11-15, 2010

46. LED/BLU/LightingⅠ

[46-3] 09:45

Fabrication of CNT Field Emitters using a Filtration-Taping-Transfer Method

D. H. Shin, Y. Song, Y. Sun, J. Y. Lee, J. H. Shin, and C. J. Lee (Korea Univ., Korea)

A fabrication of carbon nanotube (CNT) field emitters using a

It shows excellent field emission performance compared with screen-printing and spraying methods. The CNT Emitters fabricated by the FTT method showed the high density of emission sites, good electrical contact, and strong mechanical adhesion. Furthermore, the CNT emitter made by the FTT

[46-4] 10:05

Design of Edge-Emitting White Color Mixing Lens for Light Emitting Diode Backlight Unit

S.Lee, S.Hwang, M.Lim, H,Han (POSTECH, Korea), D. Lee, B. Kim, and S. Kang (LG Display Co., Ltd., Korea)

A design of edge-emitting white color mixing lens (CML) for light emitting diode (LED) backlight unit (BLU) is proposed in this study. The proposed structure is much smaller and has higher

Room 301

164

47. Measurement

- Chair: M.-C. Park (KIST, Korea)- Co-chair: S.-W. Min (Kyung Hee Univ., Korea)

[47-1] 09:00

[Invited] Measurement Methods of Autostereoscopic 3D Display

T. Koike (Hitachi, Ltd., Japan)

In the paper, we describe the essence of autostereo-scopic displays and its measurements. We think the essence of 3D

than traditional 2D displays. The second one is directionality of reproduced l ight ray. We also describe signif icant differences between autostereoscopic displays in the point of measurements and practical measurements.

[47-2] 09:25

[Invited] Grey Level Analysis of Different Types of 3D Displays

P. Boher, T. Leroux, and V. C. Patton (ELDIM, France)

Grey level analysis method is proposed for three different 3D displays: one auto-stereoscopic 3D display is measured with high angular resolution viewing angle instrument; one polarization based 3d display is also measured with viewing

3D display is measured with a luminance-meter coupled with shutters glasses. In each case 3D contrasts for the different grey level transitions are computed. For auto-stereoscopic and polarization based 3D displays there are quite constant versus grey levels. On the contrary, strong variations are observed for time sequential display which shows that grey level perception is really the main drawback for such displays.

Room 303

165October 11-15, 2010

47. Measurement

[47-3] 09:50

[Invited] Measurement of Gray-to-Gray Crosstalk in Stereoscopic Displays

S. Shestak (Samsung Electronics Co., Ltd., Korea)

A method for measurement of stereoscopic crosstallk between left and right image pixels in a time sequential LCD stereoscopic

model of LCD switching, is applied for measurement of gray-to-gray crosstalk. Experimental results show strong dependence of crosstalk on input gray levels.

[47-4] 10:15

Optical Characterization of Time-Sequential Stereoscopic 3D Displays

P. Boher, T. Leroux, and V. C. Patton (ELDIM, France)

Optical characterization of time sequential stereoscopic 3D display is made investigating its temporal behavior for all grey level transitions. OptiscopeSA, dedicated to luminance and temporal behavior measurements of LCD displays is used. The transmittance and response time of the shutter glasses is measured. The grey to grey level response times and luminance targets are measured in 3D mode. Finally, the temporal behavior of the complete system is modeled and grey to grey luminance across shutter glasses are deduced and compared to integrated measurement using spectrophotometer. Visual impact is checked using grey level test patterns and imaging colorimeter.

Room 303

166

48. Outcoupling

- Chair: Y. Lin (AU Optronics Corp., Taiwan)- Co-chair: S. Yoo (KAIST, Korea)

[48-1] 09:00

[Invited] A Novel Anode Structure Based on a Conductive Low-Index Layer for Outcoupling Enhancement in OLEDs

S. Yoo, T.-W. Koh, J.-M. Choi (KAIST, Korea), and S. Lee (Samsung Mobile Display Co., Ltd., Korea)

A new opportunity for outcoupling enhancement in OLEDs is demonstrated based on conductive low-index layers (CLILs) of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS). When the micropatterned ITO electrodes coated with the CLIL are used in OLEDs, 25%-75% improvement in external quantum efficiency is demonstrated with respect to conventional devices. The proposed structure is shown to work effectively with little spectral or angular dependence.

[48-2] 09:25

[Invited]Emitting Diodes by Spontaneously Formed Buckles

W. H. Koo, F. Araoka, K. Ishikawa, H. Takezoe (Tokyo Inst. of Tech., Japan), S. M. Jeong, S. Nishimura, and T. Toyooka (Nippon Oil Corp., Japan)

Most of light emitted from organic light emitting diodes (OLEDs) is trapped into ITO/organic layers as waveguide modes. Although many studies have used wavelength-scale periodic gratings to solve this problem, these are efficient only at a

condition. Here, we demonstrate that a quasi-periodic buckling structure with broad distribution and directional randomness can

changes and particular directionality.

Room 304

167October 11-15, 2010

48. Outcoupling

[48-3] 09:50

Light Out-Coupling Efficiency of Micro-Cavity Organic Light Emitting Devices for Down Conversion White Lighting

J. Lee (LG Display Co., Ltd., Korea), N. Chopra (Plextronics, Inc., USA), D. Bera, S. Maslov, S. Eom, P. Holloway, J. Xue, and F. So (Univ. of Florida, USA)

Light out-coupling efficiency of strong cavity FIrpic doped blue OLED have studied. Microcavity structures spectrally and spatially redistribute optical cavity modes in OLEDs. By optimization of cavity strength and length, it is possible to minimize of the ITO/organic mode and maximize of the extracted mode, which leads the enhancement of out-coupling efficiency. Three advantages of blue microcavity PHOLED for down-conversion are discussed here. One is that blue shifted spectrum of microcavity device compromises high quantum yield of phosphor. The second is that the number of blue photons enhanced by blue microcavity increases efficiency of down-conversion WOLEDs. The third is that phosphor films extract out the trapped substrate guided mode in microcavity device.

[48-4] 10:10

Surface Plasmon Enhanced Nanostructure Design using FDTD Simulation for Improving Luminous Efficacy of Polymer Light-Emitting Devices

Y. Yeo, K. H. Cho, and K. C. Choi (KAIST, Korea)

We demonstrated a systematic stuYYyydy on localized surface plasmon resonance of hexagonal Ag nano dot structure using Finite Descrete Time Domain(FDTD) tool. From the simulation result, First, Designed PLED structure’s absorption spectrum is proved theoretically. Second, It was found out that changing Ag dot lattice cosnstant smaller causes blue shifted absorption peak which becomes closer to MEH-PPV emission wavelength.. It could increase in spontaneous rate owing to surface plasmon excitation emission coupling.

Room 304

168

49. Color/Human Factor/Display MeasurementⅡ

- Chair: S. Lee (Samsung Mobile Display Co., Ltd., Korea)- Co-chair: D. G. Lee (LG Display Co., Ltd., Korea)

[49-1] 10:40

[Invited] Review and Future Directions of the MeasurementStandard from the International Committee for Display Metrology

E. F. Kelley (KELTEK LLC, USA)

The new measurement s tandard document f rom the International Committee for Display Metrology (ICDM) sponsored by the Society for Information Display (SID) is a considerable expansion of the FPDM2 document from VESA (Video Electronics Standards Association). Major new chapters are 3D-stereo, motion, gray and color scales, and projection metrics. Concerns for reasonable contrast metrics and more than three primaries are discussed. We review the philosophy, the structure, content, and possible future directions of the ICDM effort.

[49-2] 11:05

Measurement of the Frame-Sequential Displays

F.-H. Chen, K.-C. Huang, L.-C. Lin, C.-L. Wu, and K. Lee (ITRI, Taiwan)

3D performance of frame-sequential stereoscopic displays is associated with 3D-ready displays and shutter glasses (SG). However, the display is coupled to SG, so the resources of affecting 3D performance are not clear. This paper proposes ideal shutter glasses (ISG) as a platform to evaluate 3D performance purely from the display, independent of physical properties of SG. This method resolves illuminance of the display in time domain, and 3D performance purely from the display is obtained. Therefore, this decoupling method helps us to evaluate 3D-ready displays independent from SG, and to provide guidance for improving 3D performance.

Room 305

169October 11-15, 2010

49. Color/Human Factor/Display MeasurementⅡ

[49-3] 11:25

Spectral Approach to Measure Moirés in 3D Displays

V. V. Saveljev (Hanyang Univ., Korea)

Theoretical and experimental investigations of moirés in three-dimensional displays are performed in the spectral domain. This increases the accuracy which is essential for the transition region. Trajectories and switching branches are considered. The experimental and theoretical data are in good agreement.

[49-4] 11:45

Method for Measuring Moving Image Perceptual Resolution

J.-H. Chong, S.-H. Kim, H.-R. Park, J.-W. Bae, S.-B. Lee, H.-K. Chung, and S.-S. Kim (Samsung Mobile Display Co., Ltd., Korea)

edge time (BET) method to measure motion blur and moving image quality as perceived by the human visual system. MPPR, moving picture perceptual resolution, is proposed as a measurement method that more closely correlates to human perception of moving image quality. MPPR considers the contrast sensitivity function of human vision, resulting in an index that provides a more objective evaluation. The measurement system and algorithm are described.

Room 305

170

50. PDP Material & Process

- Chair: Y.-G. Kang (LG Electronics Inc., Korea)- Co-chair: C.-H. Moon (Hoseo Univ., Korea)

[50-1] 10:40

[Invited] Air-Stable CaMgO Protective Layer for AC-PDP

Y. Motoyama, D. Kato, and M. Seki (NHK Science and Technical Research Lab., Japan)

The thickness of the CaCO3

of the CaMgO protective layer during a high-temperature process in air, can be reduced according to the deposition conditions and by increasing the MgO concentration in the CaMgO target. The discharge voltage of the panel with Ca0.3Mg0.7O stabilizes at low values (Vf = 172 V, Vs min = 121 V) within 15–20 hours of aging; this duration is remarkably short for a high-protective layer in the air process. These voltages are considerably lower than those of MgO (Vf = 243 V, Vs min = 152 V).

[50-2] 11:05

[Invited] Excited Xe Atom Density in the 1s5 Metastable State and Energy Band Structure of MgO with Functional

Panel

E. H. Choi, Y. H. Kim, Y. J. Hong, Y. G. Han, J. H. Choi, K. A. Lee, G. S. Cho, D.-Y. Kim, and H. S. Uhm (Kwangwoon Univ., Korea)

We have investigated the spatiotemporal behavior of the excited Xenon atom density in the 1s5 metastable state and energy band structure of MgO with functional layer in high efficiency alternating current plasma display panels (AC-PDPs) with new electrode structure. We also measured the energy band structure fe

emission characteristics with He ion source (24.58eV) for the MgO protective layer with functional layer. By adopting these improvements in structure and functional layer on MgO, the maximum density of excited xenon atom was improved to 2.4

that of conventional structure.

Room 302

171October 11-15, 2010

50. PDP Material & Process

[50-3] 11:30

Effects of Processing Conditions on Firing Voltages of (Mg,Ca)O Electron Emission Layer at High Xe Content Discharge Gas of AC PDP

S.-H. Yoon, H.-N. Choi, and Y.-S. Kim (Hongik Univ., Korea)

In order to reduce the reaction of (Mg,Ca)O thin film with moisture and carbon dioxide gas in air atmosphere, its reaction kinetics were analyzed. Based on the study, we devised a new

were investigated. The test panels under such processing

[50-4] 11:50

Improvement of Discharge Delay Time Characteristics of CaO Protective Layers

D. Kato, Y. Motoyama, M. Seki, and K. Ishii (NHK Science & Tech. Research Lab., Japan)

We propose a new process to apply the single crystal MgO particles to improve the discharge-delay-time (DDT) characteristics of CaO protective layers; CaO is a high- material. In the proposed process, the MgO particles are located under the CaO protective layer, and therefore, the DDT characteristics can be improved without any increase in the discharge voltage.

Room 302

172

51. Green Display Materials for Future ApplicationsⅢ

- Chair: J.-S. Park (Dankook Univ., Korea)

[51-1] 10:40

[Invited] Printed Electronics - Inkjet Printing of Electronic Materials and Their Device Applications

J. Kim, H. Kim, Y. J. Yoon, and J. Kim (KICET, Korea)

We have successfully demonstrated the inkjet printing method to create Al2O3,BaTiO3, ATO, ITO, and TiO2 films. These materials were applied to various electronic devices by inkjet printing.

[51-2] 11:05

Oxide TFT Stability Dependence on External Gases

M.-G. Kim, I. S. Park, Y. S. Lee, K. Im, C.-M. Park, K. J. Jun, C. G. Choi, Y. G. Mo, and H. D. Kim (Samsung Mobile Display Co., Ltd., Korea)

Stability of a-IGZO (amorphous indium gallium zinc oxide) TFTs made with several passivation layers has been observed to be indirectly affected even by external gases. The trend of Vth shift under negative bias thermal stress conditions was monitored as N2, O2, and moisture content were varied. It was found that the trend of Vth shift by oxygen and moisture was the same as that of the active layer directly exposed to oxygen and hydrogen. This indirect doping effect is similar to that of direct doping due

layers formed on top of the active layer.

Room 211B

173October 11-15, 2010

51. Green Display Materials for Future ApplicationsⅢ

[51-3] 11:25

H-Plasma Enhanced Aluminum Induced Crystallization of Poly-Si

C. Luo, J. Li, Z. Meng, C. Wu, S. Xiong (Nankai Univ., China), and H.-S. Kwok (Hong Kong Univ. of Science and Tech., China)

The process of crystallization and passivation of poly-Si from a-Si was completed at the same time by aluminum induced crystallized in hydrogen plasma as called HAIC. It can shorten the crystallization time by 3/5 than that by normal in vacuum (AIC) in our condition. The residual quantity of Al in poly-Si by HAIC can be decreased to near half order of magnitude than that one crystallized by normal AIC. The Hall mobility was increase by near double. The enhancement mechanism was analyzed in the paper.

Room 211B

174

52. LED/BLU/Lighting Ⅱ

- Chair: M. Takai (Osaka Univ., Japan)- Co-chair: C. J. Lee (Korea Univ., Korea)

[52-1] 10:40

[Invited] Light Sources using Field Emitter Technologies

H. Mimura, Y. Neo, T. Aoki (Shizuoka Univ., Japan), and T. Matsumoto (Stanley Electric Corp., Japan)

and compact light sources. We have developed a compact pulse x-ray tube and demonstrated high-speed x-ray radiography images. We have also developed an electron-beam pumped

emission due to Xe excimers in a vacuum UV region. We have also successfully demonstrated Smith-Purcell radiation using a

[52-2] 11:05

Photoluminescence Properties and Energy Transfer of Dy3+ and Tm3+ Co-activated CaZrO3 Phosphor for White LEDs

Y. Li and Y. Wang (Lanzhou Univ., China)

Under 355 nm excitation, CaZrO3: Dy3+ series showed characteristics emission of Dy3+, which exhibited yellowish white color. By introducing Tm3+ to the matrix, the emitted hue of the Dy3+-doped sample could be easily tailored to white, and simultaneously energy transfer (ET) from Tm3+ to Dy3+ was observed. The co-activated phosphors presented good match to ultraviolet (UV) light-emitting diodes (LED), which revealed that they could be a novel promising phosphors utilized in white LED application.

Room 301

175October 11-15, 2010

52. LED/BLU/Lighting Ⅱ

[52-3] 11:25

[Invited] High Luminance and High Luminous Efficacy White Color Flat Field Emission Lamps with Newly Developed Low Acceleration Voltage Phosphors

M. Nakamoto, J. Moon, and H. Hiraki (Shizuoka Univ., Japan)

High luminance and high luminous efficacy white color flat field emission lamps (FELs) have been studied by the newly developed low acceleration voltage high luminance green phosphors, SrGa2S4:Eu, and blue phosphors, SrGa2S4:Ce, to realize high quality backlight unit and general lighting, and to avoid mercury. The SrGa2S4:Eu and SrGa2S4:Ce phosphors have demonstrated the luminance of 162,000 and 20,000 cd/m2 at 5 kV acceleration voltage, which are more than 1.25 and 1.67 times higher than those of P22 green and blue phosphors, respectively. The FELs using SrGa2S4:Eu and SrGa2S4:Ce

to practical use.

Room 301

176

53. Volumetric Display and Integral Imaging

- Chair: O. Matoba (Kobe Univ., Japan)- Co-chair: J.-H. Park (Chungbuk Nat’l Univ., Korea)

[53-1] 10:40

[Invited] Recent Research about Projection-Type Three-Dimensional Display

S.-W. Min (Kyung Hee Univ., Korea)

This paper introduces the projection-type 3D display and reports the recent researches related with the projection-type

two categories; the system using projector and the system to project 3D image. The typical systems of each case are also introduced. The 3D screen which is requisition of the system to project 3D image is also introduced.

[53-2] 11:05

Color Omnidirectional-View Three-Dimensional Display Based on Rotating Selective Diffuser

X. Xia, C. Yan, H. Li, Z. Zheng, and X. Liu (Zhejiang Univ., China)

Three-dimensional (3D) display with omnidirectional view combines the characteristic of autostereoscopic and volumetric displays, and occlusion-capable highly multi-view display is implemented. This paper presents the principle of this 3D display and analyzes the performance of it. With this display system, the real 3D scenes can be reconstructed for observers viewing from different directions. Observers could watch vivid

Room 303

177October 11-15, 2010

53. Volumetric Display and Integral Imaging

[53-3] 11:25

The Use of Index Medium for Viewing Angle Enhancement in Integral Imaging

J.-Y. Jang, H.-S. Lee, S.-D. Cha, and S.-H. Shin (Kangwon Nat’l Univ., Korea)

In conventional integral imaging, the viewing angle is limited by the size of elemental image and focal length of the corresponding elemental lens. In this regard, the proposed method employs a refractive index medium. The viewing angle enhancement depends on the refracting property of the ray light from high index medium to lower index. In this paper, viewing angle enhanced integral imaging system is analyzed. The experiment is carried out using planoconvex lens array with and without refractive index medium, and the results are compared.

[53-4] 11:45

Enhanced 3D Objects Recognition using DPM in CEII System

M. Zhang, Y. Piao, and E.-S. Kim (Kwangwoon Univ., Korea)

In this paper, we propose a direct pixel mapping method for improving recognition of partially occluded 3D objects in computational curving effect integral imaging. In the proposed method, the interference is reduced at short distance from the lenslet array to the output plane, so that the computational time is dramatically shortened. To show the usefulness of the proposed method, we presented some experiments and demonstrated the improvement of the recognition performance. Results are represented.

Room 303

178

54. AMOLED

- Co-chair: S. Yoo (KAIST, Korea)

[54-1] 10:40

[Invited] 15-Inch RGBW OLED TV using White OLED and 15-Inch RGB using Fine Metal Mask Technology

C.-W. Han, H.-K. Kim, J.-M. Lee, J.-K. Shin, S.-H. Pieh, C.-O. Kim, Y.-M. Choi, M.-Y. Han, H.-S. Pang, J.-J. Kim, T.-S. Yoo, H.-S. Choi, H.-W. Kim, S.-J. Hwang, M.-S. Kim, D.-S. Yang, D.-H. Kim, S.-J. Bae, and B.-C. Ahn (LG Display Co., Ltd., Korea)

We fabricated 15-inch HD panel employing the two-stacked WOLED and color filter, which color gamut is up to 101.2% (CIE1976) and power consumption is 5.22W at 320 cd/m2,9000K.

(0.340, 0.334). 15-inch RGBW panel was investigated to verify the electrical and optical performance compared to 15-inch RGB TV which was launched at Dec. 2009. And the characteristics of 15-inch RGBW panel are competitive to that of 15-inch RGB. Therefore, we suggest that color filter with white OLED is a possible patterning technology for large-sized OLED TV which

[54-2] 11:05

[Invited] Next Generation TFT Technology for AMOLED

H.-H. Hsieh, H.-H. Lu, C.-Y. Chang, T.-T. Tsai, J.-Y. Huang, H.-C. Ting, S.-F. Hsu, Y.-C. Wu, C.-S. Chuang, C.-Y. Chen, L.-H. Chang, and Y. Lin (AU Optronics Corp., Taiwan)

AMOLED has stringent demand on the performance of the backplane. In this paper, we will show the decent characteristics of oxide-TFTs which meet the AMOLED requirements. Further, several prototypes of displays will be demonstrated using oxide-

the next generation TFT technology for AMOLED.

Room 304

179October 11-15, 2010

54. AMOLED

[54-3] 11:30

[Invited] Power Efficient All-Phosphorescent AMOLED with Novel Four Sub-Pixel Architecture

W.-Y. So, P. A. Levermore, V. I. Adamovich, K. Rajan, M. S. Weaver, R. Ma, M. Hack, J. J. Brown (Universal Display Corp., USA), M. H. Kang, H. J. Kim, J. H. Hur (Silicon Display Tech., Korea), J. W. Choi, J. I. Kim, and J. Jang (Kyung Hee Univ., Korea)

A novel all-phosphorescent AMOLED pixel architecture with a red, green, light blue and deep blue sub-pixel design is presented. Power consumption is reduced by 33% with the inclusion of a highly efficient light blue compared to an equivalent conventional RGB display using a fluorescent blue sub-pixel. Here we demonstrate this new design in a 2.5-inch AMOLED panel.

[54-4] 11:55

Development of Medical Monitor Based on Efficient Tandem White OLED Device

C. Chu, S. Lee, Y-S Lee, B. Park, S. Kim, H.-S. Kim, W. Lee, S. Choi, H. Chung, B. Berkeley, and S. S. Kim (Samsung Mobile Display Co., Ltd., Korea)

A medical monitor based on a tandem white active matrix OLED has been developed. White OLED devices with 33.3

monochrome monitor to achieve high resolution. The stacked OLED device was optically optimized to minimize changes of color and luminance from off-axis viewing positions. Sequential

off ratio, and compensation circuits for IR drop and Vth variation have been applied for enhanced luminance uniformity throughout the panel active area. The monitor achieves very high contrast ratio, wide angle of view, and high luminance uniformity.

Room 304

180

55. Color/Human Factor/Display MeasurementⅢ

- Chair: J. J. Yoo (LG Display Co., Ltd., Korea)- Co-chair: D.-S. Park (Samsung Electronics Co., Ltd., Korea)

[55-1] 13:30

[Invited] Colorimetric Problems of LEDs used as LCD Display Back-Lights

J. Schandar (Univ. of Pannonia, Hungary), S.-Y. Choi, D.-S. Park, H.-Y. Lee, and C.-Y. Kim (SAIT, Korea)

Colours of LEDs and broad-band light sources matched ab = 10 differences

were found. Using updated colour matching function (CMF)s these discrepancies can be minimized. The CMFs tentatively proposed by CIE TC 1-36 have been applied and the observed colour differences for white lights halved. This is of prime importance if proper colour representation is required on modern LED backlight computer displays.

[55-2] 13:55

Measuring Color Characteristics of Plasma Display Panel

S. Lee and Y. Kwak (Ulsan Nat’l Inst. of Science and Tech., Korea)

The method for analyzing color characteristics of plasma display panel (PDP) is proposed considering the automatic power control (APC) level changes. First, all the patches required to the analysis were represented in one screen. In this way, it can be guaranteed that the same APC level is applied for all the colors. The APC level is controlled by changing the background colors. Second, the effect of spatial non-uniformity is considered. The weighting factors are calculated for each position by comparing the measured data of white patches. Then, the calculated weighting factors are applied to the measured data to compensate spatial non-uniformity.

Room 305

181October 11-15, 2010

55. Color/Human Factor/Display MeasurementⅢ

[55-3] 14:15

Modifying a Local Concavity of Gamut Boundary in Segment Maxima

H.-G. Ha, W.-J. Kyung, and Y.-H. Ha (Kyungpook Nat’l Univ., Korea)

In this paper, we proposed a method for modifying the gamut boundary in segment maxima method. According to the number of segments in the segment maxima, a local concavity is generated in gamut boundary. It induces artifacts or deterioration of the image quality. To remove the artifacts, a local concavity is detected by geometric distinction using three

extending a detected concave point to the line connecting two adjacent boundary points. Experimental results show that the contours in a uniform color region and color artifacts from the conventional segment maxima algorithm are removed.

[55-4] 14:35

Automated, High-Speed Methods for Display Defect

H. Kostal, D. Kreysar, G. Pedeville, R. Rykowski, and S. Skelly (Radiant Imaging Inc., USA)

A broad array of tests is avai lable for display quali ty assessment. In a production setting these tests are generally performed by human observers and have limited repeatability and quantitative detail. By capturing display images using a precision imaging colorimeter and processing them using advanced display detection techniques it is possible to produce a comprehensive analysis of display quality in a minute or two at most. This analysis is highly repeatable, replicates human

the system, initial analysis results and areas of application. Two notable advances are automated display area detection and Moire removal.

Room 305

182

56. Display Manufacturing & Equipment I

- Chair: H. Chae (Sungkyunkwan Univ., Korea)- Co-chair: J. Lee (Samsung Electronics Co., Ltd., Korea)

[56-1] 13:30

[Invited] Solid State Lasers and Optics for Pulsed and Cw Green Wavelength Thin Film a-Si Crystallization

H.-J. Kahlert, B. Burghardt, H. Schmidt, and M. Timm (INNOVAVENT GMBH, Germany)

Laser based liquid phase and solid phase (SPC) crystallization

LCD and OLED TFT back plate preparation. Green pulsed and cw solid state lasers provide full melt and partial melt process options for top electrode architectures and cw allows solid phase processing of bottom gate designs applied in TV applications. The paper describes LASER OPTICS to generate homogenous laser line geometries using the thin disk laser technology (515nm, 532nm) in scanning applications and the roadmap to high throughput production.

[56-2] 13:55

[Invited] Matching Technology for R2R Printed Electronics

C. Lee, H. Kang, and K. Shin (Konkuk Univ., Korea)

Roll-to-roll printing is an attractive technology for mass-producing printed electronics. Application of R2R printing process, however, requires information related to system parameters. We show that the quality of a printed pattern in term of geometric and functional aspects could be affected by tension in spite of optimal settings like an optimized ink and printing method. In addition, an ink transfer mechanism is analyzed to reveal the relationship between dynamic surface roughness and tension of a moving web. It is found that two important factors for achieving desired thickness and roughness are optimal tension and control accuracy of the operating tension.

Room 302

183October 11-15, 2010

56. Display Manufacturing & Equipment I

[56-3] 14:20

Split Sputter Mode – A Novel Sputtering Method for Flat Panel Display Manufacturing

F. Pieralisi, M. Hanika, E. Scheer, and M. Bender (Applied Materials GmbH & Co KG, Germany)

Advanced deposition methods based on the magnet wobbling technique have been investigated for achieving highly uniform and homogeneous metallization layers. The novel Split Sputter Mode method, wherein the deposition process is divided into two distinct steps, enables the AKT rotary cathode technology to provide excellent layer properties while keeping a high production throughput.

Room 302

184

57. Mobile Display and Touch Panel Ⅰ

- Chair: C.-S. Kim (LG Display Co., Ltd., Korea)- Co-chair: W.-G. Jang (KOPTI, Korea)

[57-1] 13:30

[Invited] OLED Microdisplays with Advanced Features Enabling New Applications

U. Vogel, D. Kreye, B. Richter, K. Fehse, T. Pres-berger, R. Herold, and M. Scholles (Fraunhofer IPMS, Germany)

Driving concepts and pixel electronics for microdisplays based on OLEDs have been developed. Two different types of mobile applications were in focus: The first types are applications with moderate luminance (<500 Cd/m²), e.g. video-glasses

with high luminance (up to 10,000 Cd/m² and more), e.g. see-through HMDs and microprojectors. Effects on the electronic driving design, necessary for use in bi-directional microdisplays (microdisplay and camera on a single chip) are also discussed together with system and application aspects.

[57-2] 13:55

[Invited] Compact Green Light Sources for Micro Projector: Current Status and Prospect

N. E. Yu, J. W. Choi, and D.-K. Ko (GIST, Korea)

Red, green and blue laser sources are attracting considerable interest to enable ultra-small, embedded laser scanning projection devices. Green lasers turned-out to be on the critical issue for the technical and commercial success of laser displays. Because all current approaching methods are based on frequency doubling, the green source is the major contributor of cost, size and power consumption. We discuss recent progress on the development of green laser in key parameters such as frequency doubling methods, size, output power, beam quality, and modulation bandwidth.

Room 211B

185October 11-15, 2010

57. Mobile Display and Touch Panel Ⅰ

[57-3] 14:20

[Invited] Multi Finger and Stylus Recognizing Touch Screen

H.-W. Jang, J.-S. Ku, S.-.S Ahn, C.-H. Lee, J.-Y. Kim, T.-H. Jung, and K.-Y. Han (Samsung Mobile Display Co., Ltd., Korea)

We have developed capacitive touch screen system recognizing

MTS). Touch screen pattern and active stylus are designed to achieve high sensitivity and position relativity. Sensing

signal is optimized. Pattern recognition algorithm is adapted to calculate precise stylus position. Using these technologies, we

stylus together.

[57-4] 14:45

Multi-Touch Recognition using Divergence Beam on Large-Sized LCD

S. Choi, Y. Lee, W. Lee, M. Song, D. Lee, J. Shin, I. Chung (LG Display Co., Ltd., Korea), and V. Pushchin (LG Tech. Center Moscow, Russia)

This paper proposes a multi-touch recognition technology which can be applied to large-sized LCD. To achieve this goal, a set of IR LEDs and sensors is used to construct an IR matrix, and a new algorithm based on Hough transform is applied. This approach reduces multi-touch noise compared to other IR touch recognition technologies, and shows robust performance on multi-touch recognition.

Room 211B

186

58. LED/BLU/LightingⅢ

- Chair: S. M. Cho (Sungkyunkwan Univ., Korea)- Co-chair: J.-I. Lee (ETRI, Korea)

[58-1] 13:30

[Invited]Requirement for Edge-Lit LED Backlights

J. K. Park, J. W. Kwon, and M. S. Choi (Samsung LED Co., Ltd., Korea)

Thermal assessment by numerical simulation on edge-lit LED backlights for large screen LCD TV has been con-ducted in order to figure out which configuration is favorable for the thermal management and how much the luminous efficiency of LED is to be improved. We think that 2-side LED bar configuration is the best optimized solution between thermal management, cost effectiveness, and luminous efficiency of LED.

[58-2] 13:55

[Awarded Paper - KIDS Award (Gold Prize, Sponsored by LG Display)]Local Dimming in Edge-Type Light Emitting Diode Backlight Units

S. Lee, S. Hwang, M. Lim, H. Han (POSTECH, Korea), D. Lee, B. Kim, and S. Kang (LG Display Co., Ltd., Korea)

A new local dimming technique for edge-type light emitting diode (LED) backlight units (BLUs) is introduced by designing an appropriate light guide panel (LGP) structure in this study. This new local dimming technique can be used to increase contrast and to reduce power consumption of edge-type LED displays.

Room 301

187October 11-15, 2010

58. LED/BLU/LightingⅢ

[58-3] 14:15

[Invited] LEDs for Lighting ; Opportunities and Challenges

T. Oh (LG Innotek Co., Ltd., Korea)

[58-4] 14:40

Global Backlight Dimming Method using Two-Sided Gray-Level Conversion for LCD

S. I. Cho, S.-J. Kang, and Y. H. Kim (POSTECH, Korea)

In this paper, we propose a new global backlight dimming method using two-sided gray level conversion (TGLC) based on the peak signal to noise ratio (PSNR). The proposed TGLC method adjusts the number of clipped pixels on both sides of high and low gray levels by analyzing the image characteristics. In experimental results, the proposed method maximally reduces power consumption while minimizing the image distortion.

Room 301

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59. Hologram

- Chair: T. Koike (Hitachi, Ltd., Japan)- Co-chair: J.-H. Park (Chungbuk Nat’l Univ., Korea)

[59-1] 13:30

[Invited] Digital Holography and Wavefront 3D Display by Liquid-Crystal Spatial Light Modulator

O. Matoba (Kobe Univ., Japan) and Y. Awatsuji (Kyoto Inst. of Tech., Japan)

Instantaneous 3D measurement technique based on digital holography and an optical 3D display system based on wavefront reconstruction are presented. In the instantaneous 3D measurement, we have been fabricating a measurement system of spatial parallel phase-shifting digital holography using phase-mode spatial light modulator. In the wavefront 3D display system, wide viewing zone is achieved by using single spatial light modulator with time sharing reconstruction. Experimental results are provided to show the effectiveness of the proposed systems.

[59-2] 13:55

Fast Hologram Generation of Three-Dimensional Objects using Line-Redundancy and Novel-Look-up Table Method

W.-Y. Choe, S.-C. Kim, and E.-S. Kim (Kwangwoon Univ., Korea)

In this paper, a new approach for fast computation of CGH patterns for the 3-D image by combined use of the DPCM and the N-LUT is proposed. Some experiments with test 3-D images are carried out and the results are compared to those of the conventional methods in terms of the number of the object points and computation time.

Room 303

189October 11-15, 2010

59. Hologram

[59-3] 14:15

Wide Viewing-Angle 3D Wavefront Reconstruction with

M. Tanaka, K. Nitta, and O. Matoba (Kobe Univ., Japan)

A three-dimensional (3D) display with a wide viewing angle with elimination of the surface reflection of spatial light modulator is proposed. In a reconstruction system, single display device such as a spatial light modulator is used to display the wavefront data. Tilted illumination and displayed wavefront data are synchronized to achieve 3D reconstruction with wide angle. Experimental results are presented and the effectiveness of the proposed method is shown.

[59-4] 14:35

Colorful Reconstruction of 3D Objects from Single-Plane Fourier Hologram Based on Integral Imaging

N. Chen, M.-L. Piao, J.-H. Park, and N. Kim (Chungbuk Nat’l Univ., Korea)

A technique of recording and reconstructing a color hologram based on the integral imaging is presented. The design is based on the manipulation characteristics of the Fourier hologram generation from orthographic images. The RGB components of a three-dimensional (3D) object’s orthographic images are shifted with some distance from the hologram plane. The shifted distances are calculated in order to obtain a fine color image when the hologram is illuminated by three laser beams of RGB colors. The color image is reconstructed at a desired distance.

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190

60. OLED Process

- Chair: Y. Park (Kyung Hee Univ., Korea)- Co-chair: K.-O. Cheon (UDC, USA)

[60-1] 13:30

[Invited] OLED Technology Scalable for Television: Solu-tion Process Delivers Printed Lifetime

Displays, Inc., USA)

DuPont is work ing to demonstrate a so lut ion-based manufacturing process in which OLEDs can be cost-effectively printed while delivering the necessary performance and lifetime, and recently announced that it has achieved record performance in printed organic light emitting diode (OLED) displays,

test devices were made which can be operated at elevated luminance for an accelerated lifetime test. Printed devices using the DuPont process have reliably achieved lifetimes to 50% of initial luminance of 29,000 hours (red), 110,000 hours (green) and 34,000 hours (blue) at typical television brightness levels.

[60-2] 13:55

[Invited] Application of Metal Peel-off Method for the Fabrication of Flexible Organic Light Emitting Diodes

S. Y. Kim (Chung-Ang Univ., Korea), and J.-L. Lee (POSTECH, Korea)

A f lexible organic l ight emitt ing diodes (OLEDs) was demonstrated using the peel-off technique. OLEDs fabricated on glass/oxide/metal were separated between a metal and oxide interface, showing the bending properties. No distinct deterioration in electrical properties of OLED was found after the peel-off process. The data from 90 degree peel test, x-ray photoemission spectra, x-ray diffraction, atomic force microscopy, and contact angle suggested that a metal at the interface with a metal oxide is easily oxidized, reducing the adhesive forces and enabling the peel-off process.

Room 304

191October 11-15, 2010

60. OLED Process

[60-3] 14:20

Highly Efficient Simple-Structure Small-Molecule Organic Light-Emitting Diodes by using a Self-Organized Polymeric Hole Injection Layer

T.-H. Han, S.-H. Woo, M.-R. Choi, and T.-W. Lee (POSTECH, Korea)

We present a highly efficient simple OLEDs which have simpli f ied structure comprising single small-molecule EML(emitting layer) with solution processed high performance

show a very high luminous efficiency (~20cd/A) despite their

Room 304

192

61. Color/Human Factor/Display MeasurementⅣ

- Chair: Y. Kwak (Ulsan Nat’l Inst. of Science and Tech., Korea)- Co-chair: Y. J. Kim (Samsung Electronics Co., Ltd., Korea)

[61-1] 15:10

[Invited] High Dynamic Range Imaging

J. Duan (Southwestern Univ. of Finance and Economics, China)

In this paper, we introduce topics in all stages of the high dynamic range imaging pipeline that includes, alignment methods, the generation of radiance map, the encoding of radiance map and tone mapping technologies.

[61-2] 15:35

[Awarded Paper - KIDS Award (Silver Prize, Sponsored by Samsung Electronics)]Estimation of Low Dynamic Range Images from a Single Image for High Dynamic Range Imaging Based on Exposure Look-up Table

T.-H. Lee, and Y.-H. Ha (Kyoungpook Nat’l Univ., Korea)

HDR(high dynamic range) imaging supports wider dynamic range than normal images captured from general still camera. However, this technique usually needs several shots to obtain LDR(low dynamic range) images as merging purpose, causing artifacts such as ghosting. This paper suggests a method to estimated necessary LDR images from a single image using exposure LUT(look-up table) constructed by simple measurement. We first construct exposure LUT for each RGB channel. Then, from an image captured by auto mode in camera, LDR images which have each target average luminance are be estimated using constructed LUT. All procedures are performed with RGGB Bayer image. Also, saturated area is compensated by considering channel dependency. In experimental comparison, high PSNR values are obtained between estimated and captured images.

Room 305

193October 11-15, 2010

61. Color/Human Factor/Display MeasurementⅣ

[61-3] 15:55

Optical Density

A. Kim, H.-S. Kim, and S.-O. Park (Daejin Univ., Korea)

This study aims to comprehensively measure the acceptability threshold to variation in reflection optical density for three solid color scales (cyan, magenta, yellow). The acceptability threshold sharply increases as reflection optical density

words, the human visual system responds more sensitively to

thickness of colorants used and traversing the entire optical path so does not account for any hue effects. In addition, two color difference equations E*ab and E*00 were evaluated, only E*00 was constant to 3.

Room 305

194

62. Display Manufacturing & EquipmentⅡ

- Chair: Y. S. Choi (LG Display Co., Ltd., Korea)- Co-chair: S.-J. Han (Doosan Mecatec Co., Ltd., Korea)

[62-1] 15:10

[Invited] Development of High Performance and Air-Stable Organic Transistor Backplane Technology by Printing Methods

Y. U. Lee, D. Bird, T. Pease, M. Cooke, K. McCall, and S. Ogier (PETEC, UK)

Organic transistor backplane was fabricated by printing method. Various kind of printing methods were used (e.g. inkjet printing, aerosol jet printing) to see the effect of deposition method and different inkjet formulations were tested to get best performance. Air stable organic semiconductor is used in this study.

[62-2] 15:35

S. Kim, S. Son, D. Lim, and D. Jeong (LG Electronics Inc., Korea)

Mura/Alluk of LCD display is critical to quality and it was not easy to inspect irregular types of the defect automatically.

quantify the mura. In this paper, a novel method is proposed to quantify the mura as an index. By employing the index, quality control of manufacturing process could be realized. As a result, the proposed index was good to sense abnormal condition of a TFT manufacturing process.

Room 302

195October 11-15, 2010

63. Mobile Display and Touch Panel Ⅱ

- Chair: C.-S. Kim (LG Display Co., Ltd., Korea)- Co-chair: W.-G. Jang (KOPTI, Korea)

[63-1] 15:10

[Invited] Single-Crystal Silicon Nanomembrane Transfer Techniques and Their Application Toward Flexible Microwave Systems

J.-H. Seo, H.-C. Yuan, L. Sun, and Z. Ma (Univ. of Wisconsin-Madison, USA)

High-speed transistors using silicon nanomembrane transfer techniques, inductors and capacitors are demonstrated all on plastic substrates. The speed of thin-film transistors (TFTs) made on the plastic substrates have reached RF level with cut-off/maximum oscillation frequency (fT/fmax) values of 2.0/7.8 GHz and both the inductors and the capacitors show resonance frequency (fres) up to 8 GHz. Robust mechanical characteristics were also exhibited by these high-frequency passives components.

[63-2] 15:35

[Invited] ITO Pattern Profile Quality Control System for Full-Size Panel

T. Tsai (Cheng-Mei Instrument Tech. Co., Ltd., Taiwan), M. Chen, and H.-S. Koo (Ming-Hsin Univ., Taiwan)

The ITO Pattern use Multi layers purpose and Cover in full panel, it is design by Multi_Touch requirement, my customers design the pattern as smaller and light colored as possible, and it is could be Steak a ITOs or Double side ITOs, we service and design the system to help my customers to control the ITO

Room 211B

196

64. LED/BLU/LightingⅣ

- Chair: H. Mimura (Shizuoka Univ., Japan)- Co-chair: K. C. Park (Kyung Hee Univ., Korea)

[64-1] 15:10

[Invited] Low-Cost Fabrication of Large-Area Polymer OLED Lightings

D.-H. Lee, H.-C. Shin, H.Chae, and S. M. Cho (Sungkyunkwan Univ., Korea)

Large-area polymer organic light-emitting diodes (OLEDs) have been prepared by a series of vacuum-free fabrication processes in order to achieve low-cost fabrication of the devices. A hole injection layer and an active polymer emissive layer have been screen-printed successively on the ITO-coated substrates. In order to complete the vacuum-free fabrication of large-area polymer OLEDs, a metal cathode layer has been transferred onto the surface of the active polymer emissive layer using a

necessity of electron injecting LiF layer, the doping of an organic salt has been carried out for full vacuum-free fabrication of polymer OLED

[64-2] 15:35

[Awarded Paper - Merck Award]Large Area, Planar Backlight Unit by Field Emission Technology

Y. Ye, T. Guo, J. Lin, Z. Lin, Y. Zhang, and L. Hu (Fuzhou Univ., China)

This paper presented a large area, planar backlight unit (BLU) by field emission technology, which was different from edge lighting lamp BLU. The large area field emission cathodes of tetrapod-like ZnO were prepared by screen printing on

ZnO BLU device was sealed under 10-7 Torr. The morphologies of tetrapod-like ZnO and cathode were investigated by scanning electron microscope (SEM). The field emission performances showed that ZnO BLU had no change after aging treatment. Moreover, good performance of luminance brightness as 4680 cd/m2 was obtained.

Room 301

197October 11-15, 2010

64. LED/BLU/LightingⅣ

[64-3] 15:55

[Invited] Hybrid White Organic Light Emitting Diode for Display Applications

J.-I. Lee, J. Lee, D.-H. Cho, J.-H. Han, J.-W. Shin, and H. Y. Chu (ETRI, Korea)

High ly e f f i c ien t wh i te organ ic l igh t emi t t ing d iodes (WOLEDs) containing blue fluorescence and green and red phosphorescence emission peaks have been developed. By engineering the interlayer between the fluorescence and phosphorescence emission layers, recombination zone could

between fluorescence and phosphorescence emission layers could be minimized. The optimized single stack device showed

of CIE coordinates at 1000 cd/m2.

Room 301

198

65. PDP Cell Structure

- Chair: H.-J. Lee (Pusan Nat'l Univ., Korea)- Co-chair: H. J. Lee (Pusan Nat’l Univ., Korea)

[65-1] 15:10

[Invited] High-Speed Addressing with Priming Cell Struc-tures in AC-PDPs

T. Murakoso, H. Tachibana, F. Kusama, K. Sumida, and R. Murai (Panasonic Plasma Display Co., Ltd., Japan)

We propose a new cell structure with priming cell and a driving method for high-speed addressing in AC- PDPs. We examine three patterns of the priming cells formed in the back plate to set up both the dis-play cells and the priming cells. Then, the statistical delay time can be shorten to less than 20 ns by one type of priming cells.

[65-2] 15:35

A Study on the Electro-Optical Characteristics of a Di-agonal Discharge Structure in the AC-PDP with Facing Electrodes

D.-H. Kim, J. Heo, J.-W. Ok, Y.-G. Kim, D.-H. Kim, H.-J. Lee, H. J. Lee, and C.-H. Park (Pusan Nat’l Univ., Korea)

In this study, the new facing discharge structure has been investigated in order to improve electro-optical characteristics. The diagonal discharge of the proposed structure contributes to

The proposed structure shows low discharge voltage, low power

conventional coplanar structure.

Room 303

199October 11-15, 2010

65. PDP Cell Structure

[65-3] 15:55

Comparative Study on the Properties of FHD and QFHD Plasma Display

Y.-S. Choi, J.-B. Lee, S.-Y. Cho, S.-B. Shim, C.-H. Park, D.-H. Kim, H. J. Lee, and H.-J. Lee, (Pusan Nat’l Univ., Korea)

We have investigated the luminous efficacy of various cell resolution and structure from 50” FHD to 50”QFHD. QFHD has the delta cell array and FHD has two different cell array types which are the delta and matrix cell array type. The results showed that, in the case of the QFHD , the sustain voltage is higher than that of FHD(matrix or delta cell array), due to the reduced wall voltage in lower electrode width and higher loss rate of charged particle in QFHD. The luminance and luminous efficacy decreased as the resolution increased from FHD to QFHD, because of higher plasma loss and lower electron heating efficiency. However, absolute efficacy of delta array QFHD reaches about 1.6 lm/W. This shows that PDP can provide QFHD TV set with reasonable power rating, which is very important for future 3D display applications.

Room 303

200

66. Late-news Session

- Chair: C. H. Lee (Seoul Nat'l Univ., Korea)

[66-1] 15:10

Material Concepts for Solution-Processable OLED Materials at Merck

A. Hayer, R. Anémian, T. Eberle, S. Heun, A. Ludemann, N. Schulte, and H. Buchholz (Merck KGaA, Germany)

In this presentation, it is shown how solution-processable small molecules based on core structures of vacuumevaporable materials can be used to accelerate performance progress. Systematic modification of small molecule materials towards better processability from solution at identical electro-optical properties is shown. This leads to a significant increase in device performance.

[66-2] 15:30

A New Cationic Iridium Complex for Organic Light-Emitting Electrochemical Cells

L. Duan, L. He, and Y. Qiu (Tsinghua Univ., China)

complex Ir(dfppz)2(tp-pyim)]PF6, using 1-(2,4-difluorophenyl)-1H-pyrazole (dfppz) as the cyclometalated l igand and 2-(1-(4-tritylphenyl)-1H-imidazol-2-yl)pyridine (tp-pyim) as the ancillary ligand. Because of the sterically bulky group 4-tritylphenyl which is attached to the ancillary ligand, the intermolecular interaction and excited-state-quenching of [Ir(dfppz)2(tp-pyim)]PF6 in solid states is significantly suppressed. Blue-green light-emitting electrochemical cells

-1 and white

based on Ir(dfppz)2(tp-pyim)]PF6.

Room 304

201October 11-15, 2010

Poster Session 2


202

[P2-1]

Viewing Angle Control Panel Using Guest-Host Liquid Crystal

C. P. Chen (Infovision Optoelectronics Co., Ltd., China), T.-H. Yoon and J. C. Kim (Pusan Nat’l Univ., Korea)

We present an optical device based on a guest-host (GH) liquid crystal for viewing angle control (VAC). This device should work as an additional panel mounted on a major TFT-LCD panel. In virtue of the GH material, two different mechanisms can be exploited to maximize the control of viewing angle.

[P2-2]

Investigation for Preferred Pretilt Direction of Liquid Crystals on Rubbing Treated Polyimide Surfaces

P. K. Son, S.-W. Choi, and S. S. Kim (Kyung Hee Univ., Korea)

Rubbing treatment could induce anisotropy and asymmetry in surface roughness of polyimide surfaces, which played an important role in determining the preferred pretilt direction of the liquid crystal molecules. According to our results, the preferred pretilt direction of the liquid crystal directors aligns along the direction with low surface roughness.

Poster Session 2


203October 11-15, 2010

[P2-3]

Polarization-Independent Liquid Crystal Lens via Axially Symmetric Photoalignment Method

S.-W. Ko, Y.-Y. Chen, S.-H. Huang, A. Y.-G. Fuh (Nat’l Cheng Kung Univ., Taiwan), and T.-H. Lin (Nat’l Sun Yat-Sen Univ., Taiwan)

In general, liquid crystal (LC) lens was designed with nematic LC cells of uniform thicknesses but with patterned electrodes to achieve various distributions of the refractive index by electrical

for controlling the pretile angle of LCs on alignment film was published. Using these methods, the LCs can be distributed as expected direction on substrate without patterned electrodes. In this research, we present the polarization-independent LC lens that can focus un-polarized light under different applying voltage. Besides, this producing method provides another convenient way to achieve the objective without patterned electrodes.

[P2-4]

Electro-Optical Performance in Blue Phase I of a Bent-Core Molecule Blended with a Chiral Dopant

M. Lee, S.-T. Hur, K. Song, and S.-W. Choi (Kyung Hee Univ., Korea)

We investigated electro-optical performance of liquid crystalline blue phase I (BP I) observed for a nematogenic achiral bent-core molecule doped with a small percentage of a chiral additive with a high twisting power.

Poster Session 2


204

[P2-6]

[Awarded Paper - Outstanding Poster Paper]Fabrication Method of Microlens Arrays using Liquid Crystalline Polymer

Y. W. Kim, S. H. Lee, J. Jeong, J.-H. Kim, and C.-J. Yu (Hanyang Univ., Korea)

We proposed a novel fabrication method of the microlens array (MLA) using liquid crystalline polymer (LCP). By using the electrohydrodynamics (EHD) technique, we can easily obtain the MLA having a polarization-dependence property. Therefore, we believe that it is applicable to the data pickup system of double-layer DVD and other applications such as optical interconnections, 3D display and so on.

[P2-7]

[Awarded Paper - Outstanding Poster Paper]Transflective Liquid Crystal Display using Cholesteric Liquid Crystal Film

U. Cha, K.-S. Bae, J.-H. Kim, and C.-J. Yu (Hanyang Univ., Korea)

We proposed a switchable liquid crystal display (LCD) between transmissive mode and reflective mode. The device has the high brightness due to use all of pixels area in both modes. The switchable display consisted of the stacked nematic LC layer and cholesteric LC layer. By the multi-functional cholesteric

modes could be obtained.

Poster Session 2


205October 11-15, 2010

[P2-8]

The Surface Ordering Method by using a Spontaneously Formed on a Patterned Polymer for Multi-domain Liquid Crystal Alignment

Y. Han, C.-S. Park, K.-I. Joo, S.-W. Kang, and H.-R. Kim (Kyungpook Nat’l Univ., Korea)

We demonstrate a surface patterning method for the pretilt angle control in multi-domain liquid crystal (LC) displays. In our method, the microscopic groove structure is spontaneously formed by the patterned macro-groove structure in polymer due to the anisotropic stress during preparation, where the macro-groove and the micro-groove surface pattern determine the surface pretilt and the azimuthal LC anchoring, respectively.

[P2-9]

Vertical Alignment Properties of a Mixture of Photocurable Monomer and Liquid Crystal via UV Irradiation

J. M. Lee, J. S. Park, J. H. Lee, D. Kang (Soongsil Univ., Korea), H. Kang, and J.-C. Lee (Seoul Nat'l Univ., Korea)

In this study, we investigate a method for vertical alignment of liquid crystal by irradiating UV light upon a mixture of nematic liquid crystal and photocurable monomer. The vertical alignment of the cell is achieved through the phase separated polymer thin film. We report that the electro-optic characteristics such as driving voltage and response time of this system are greatly improved compared to conventional vertical alignments method using polyimide.

Poster Session 2


206

[P2-10]

Synthesis and Properties of U-Shaped Bent-core Mesogens

S.-H. Bok and E.-J. Choi (Kumoh Nat’l Inst. of Tech., Korea)

New U-shaped bent-core mesogens with two different bent structures of central core (1,2-phenylene or 2,3-naphthylene) and with a dodecyloxy terminal group (R = OC12H25) were synthesized. The obtained compounds were characterized by FT-IR and NMR spectroscopy, DSC, and polarizing optical microscopy.

[P2-11]

Shift of Nematic Phase Temperature range in Bent-Core Molecules Doped with Reactive Mesogen

B. W. Park, D. H. Song, J. C. Kim, T.-H. Yoon (Pusan Nat’l Univ., Korea), E. W. Lee and E. -J. Choi (Kumoh Nat’l Inst. of Tech., Korea)

We investigated the shift of the phase transition temperatures in a bent-core molecule doped with reactive mesogen. We found that the phase transition temperature of the bent-core moleculre doped with reactive mesogen is lower than that of the pure bent-core molecule. The temperature range for the nematic phase of the bent-core molecule doped with reactive mesogen is also wider than that of the pure bent-core molecule.

[P2-12]

Desorption of Ions from the Field-Induced Absorption in Nematic Liquid Crystal Device

T.-S. Jang, Y. Oh, and J.-H. Kim (Chungnam Nat’l Univ., Korea)

The ion concentration and its motion are sometimes fatal factors in understanding the response of the nematic liquid crystal to the external electric field. Here we used a new electro-optic technique for analyzing the desorption process of ions in liquid crystal. The DC voltage was applied for a given time. After the DC voltage off, the transient transmission was measured with a

ion induced voltage, the number and mobility of the ions were obtained.

Poster Session 2


207October 11-15, 2010

[P2-13]

Impulsive Operation of Carbon Nano Tube Field Emission Back Light by Enhanced Turn-off Current Driving Method.

J.-W. Jeong, , J.-T. Kang, J.-W. Kim, Y.-H. Song (ETRI, Korea), and Y.-R. Cho (Pusan Nat’l Univ., Korea)

A field emission lamp (FEL) back light unit (BLU) for liquid crystal display (LCD) was developed by using printed carbon nano tube field emitters with an enhanced turn-off current driving method. This method dramatically shortens the turn-off

applicable to a normal impulsive or a color-sequential BLU.

[P2-14]

[Awarded Paper - Outstanding Poster Paper]Thermal Treatment for LED’s Luminous Intensity Im-provement

M. O. Kim, S. J. Lee, J. Y. Song, S. S. Jung, J. M. Moon, J. W. Lee, Y. K. Hwang, and I. J. Jung (LG Display Co., Ltd., Korea)

The luminous intensity variation of Light Emitting Diode (LED) is closely related with heat. The luminous intensity can be affected by the thickness of LED Printed Circuit Board (PCB) and the change of contact treatment between LED PCB and LED Backlight Unit (BLU), especially for an edge type LED BLU. Consequently, the luminous efficiency of LED BLU was enhanced by the concept of thermal design.

Poster Session 2


208

[P2-15]

Study on Photo- and Thermal Degradation Processes of Optical Components in LCD Backlights

S. S. Jeong and J.-H. Ko (Hallym Univ., Korea)

The photo- and thermal degradat ion processes of a side mold made of polycarbonate(PC) and a reflective polarizer(DBEF-D400) adopted in a direct-lit backlight were studied as functions of the wavelength of ultraviolate(UV) light and temperature. It was found that the degradation of these components was accelerated by increase in both temperature and UV illuminance. An empirical equation was suggested to explain the time dependence of the change in color coordinates

[P2-16]

Study on the LED Lighting for the Formation of Square-Shaped Illuminance

B.-W. Lee, J. H. Lee, J.-H. Ko (Hallym Univ., Korea), J. Wang H. Kim (GLS Inc., Korea)

The optical structure of a high-power LED module was optimized to realize a square-shaped illuminance pattern on an illumination plane. A parabolic reflector, a fly’s eye lens array, and a condenser lens were combined, and their optical parameters were optimized by using a ray-tracing technique, resulting in a square-shaped illuminance pattern with a satisfactory uniformity.

Poster Session 2


209October 11-15, 2010

[P2-17]

A Development of Local Dimming Algorithm Optimized for the NBPC Environment

S. J. Nam, Y. C. Jung, D. K. Kim, J.G. Kim, J. K. Kang, K. H. Lee, and J. K. SAhin (LG Display Co., Ltd., Korea)

Local dimming method of backlight is one of powerful techniques can be to increase contrast ratio and reduce power consumption of LCD. In generally, local dimming was actually used to save power consumption in digital LCD TV. However, this was not proper using in notebook PC (NBPC) LCD. And so, we have studied the new local dimming technique by using control of horizontal one dimension in NBPC. In this paper, we will show anew guideline that includes test patterns and main issues which can be occurred in NBPC. And we will prove that it can be achieved optimal design of the local dimming algorithm of NBPC LCD, and backlight power reducing up to 45%.

[P2-18]

COB Type LED Module on Al2O3 and AlN Substrate with Different Die Bonding Method and Thermo-Optical Properties

J. S. Kim and L. S. Park (Kyungpook Nat’l Univ., Korea)

We made chip on board (COB) type LED module on aluminum oxide (Al2O3) and aluminum nitride (AlN) as submount by using epoxy and eutectic die bonding methods. When LED modules were fabricated on aluminum oxide (Al2O3) and aluminum nitride

than the former as observed with the thermal imaging camera. The eutectic die bonding showed improved performance on both Al2O3 and AlN submounts.

Poster Session 2


210

[P2-19]

Computer-Simulation Technique for an Accurate Design of Lens-Type LED Package for LCD BLU

M.-J. Jin, S.-J. Hwang, H.-J. Park, J.-W. Lee, Y.-K. Hwang, and I.-J. Chung (LG Display Co., Ltd., Korea)

When designing a lens-type LED (Light Emitting Diode) Package, optical properties of package materials are measured and applied to a simulation tool. By using the measured data, a

90% when the designed LED package is fabricated.

[P2-20]

Optical Design for Ultra-Slim LED BLU

J. Rhim, S. Gwon, G. Han, J. Kim, J. Moon, J. Lee, Y. Hwang, and I. Chung (LG. Display Co., Ltd., Korea)

In this paper, a direct type LED BLU which is considered to be superior when realizing local dimming technology for high

the structure of a direct type LED BLU with a slim design is described as well as experimental results obtained from a 47” large fabricated sample.

[P2-21]

LED Design for Slim Direct Backlight Unit

B. H. Seo, I. J. Chung, Y. K. Hwang, J. W. Lee, J. G. Kim, G. W. Han, S. J. Gwon, J. S. Rhim, and M. S. Park (LG Display Co., Ltd., Korea)

In this paper, a direct-type Backlight Unit (BLU) with external light diffusion lens placed on the top of normal Light Emitting Diode Package (LED PKG) is designed to realize a slim BLU with local dimming function. By applying lens, it is capable of minimizing the number of LEDs used for slim direct-type BLU.

Poster Session 2


211October 11-15, 2010

[P2-22]

Demonstration of an Artificial Sunlight by LED and its Applications

J. Koo J. Chang (Nat’l Korea Maritime Univ., Korea), Y.-R. Cho (Pusan Nat’l Univ., Korea), and K. Okamoto (Kagawa Univ., Japan)

We demonstrated an artificial sunlight using LED lamps with various wavelengths from UV to IR. Hence, the spectrum of it is much more close to the natural sunlight than commercial solar simulator. Using the LED-solar simulator, I-V characteristics of commercial solar cells were measured.

[P2-23]

Anodizing Surface Treatment of Al6063 for Heat Sink Application in LED Module

K. Park Y.-R. Cho (Pusan Nat’l Univ., Korea), Y.-H. Song (ETRI, Korea), and J. Chang (Nat’l Korea Maritime Univ., Korea)

An anodizing surface treatment was demonstrated to Aluminum (Al6063) plate for heat sink application of light emitting diode (LED). The pitting corrosion caused by an anodizing increased specific surface area of the heat sink and improved heat-transfer properties of heat sink in LED module.

Poster Session 2


212

[P2-24]

Optical Characteristics of Flexible BLU with Plasma Discharge

G. U. Goo S. E. Lee (Korea Polytechnic Univ., Korea), and S. I. Ahn (KAIST, Korea)

A flexible BLU was created by embedding plasma discharge clusters in a polydimethylsiloane. The light distribution of the BLU was measured at various combination of the optical sheets and compared to the simulated results using ray-tracing method. Brightness uniformity and reduction of the BLU were observed differently in accordance with the number of optical sheets and bending angles. The results from real and imaginary flexible

bending state and at between bending angles

[P2-25]

Design and Fabrication of LED Lamp Units for Long Life Time and High Color Rendering Index

J. W. Kim, S. Lee, J. S. Kim, U.-H. Lee, Y.-G. Ju, L. S. Park (Kyungpook Nat’l Univ., Korea), and D. W. Lee (Phoenix PDE Co., Ltd., Korea)

We designed a high brightness LED module for application to clinical head lamp with optical system consisted of two lenses. The LED module with AlN substrate showed good heat dissipation and optical properties. The assembled LED head lamp unit also exhibited high color rendering characteristics.

Poster Session 2


213October 11-15, 2010

[P2-26]

Optical Enhancement of InGaN/GaN Quantum Wells Grown on Epitaxial Lateral Overgrown Semipolar (11-22) GaN

S.-N. Lee (Korea Polytechnic Univ., Korea), and J. Kim (KICET, Korea)

We investigated on the optical and the crystal qualities of InGaN/GaN quantum wells (QWs) grown on epitaxial lateral overgrown (ELO) semipolar (11-22) GaN. Fully-coalescenced ELO-GaN had a good surface morphology and very low defect density of ~ 5.5 × 105cm-2, which was smaller than that of defective region with seed GaN and coalescence boundaries. The cathode luminescence intensity of InGaN/GaN QWs at low defect region was about 7 times higher than at high defective region. It indicated that the optical property of semipolar InGaN

Poster Session 2


214

[P2-27]

withdrawn

[P2-28]

Electron Emission Properties of CNT Emitters with Various Growth Temperatures

A. N. Ha, J. H. Ryu, H. M. Oh, N. Y. Bae, E. H. Lee, W. M. Bae, J. Jang, and K. C. Park (Kyung Hee Univ., Korea)

We studied on dependence of the temperature in growth of carbon nanotube emitter. CNT emitters were grown on Si wafer with varying growth temperature condition. The electron emission current was enhanced and the length of emitter was increased with increasing the growth temperature. This result demonstrates that the growth rate and crystallinity of CNT can be controlled with the growth temperature.

[P2-29]

Fiber

Y. Song, D. H. Shin, Y. Sun, J. Y. Lee, J. H. Shin, and C. J. Lee (Korea Univ., Korea)

The point emitter was fabricated by a multi-walled carbon nanotube (MWCNT) fiber using a tip treatment by ethylene glycol. It showed the high emission current and good emission

tight binding of MWCNTs at the sharp tip.

Poster Session 2


215October 11-15, 2010

[P2-30]

Field Emission of Ru Nanoparticle Decorated Double-Walled Carbon Nanotubes

D. H. Shin, Y. Song, Y. Sun, J. Y. Lee, J. H. Shin, and C. J. Lee (Korea Univ., Korea)

We decorated double-walled carbon nanotubes (DWCNTs) with ruthenium (Ru) nanoparticles with a simple chemical method. The Ru nanoparticles are uniformly coated onto the surface of the DWCNTs. The Ru nanoparticle coated DWCNTs showed high emission current density and good emission stability. The enhanced emission properties are attributed to increased density of emission sites and multi-stage effect.

[P2-31]

Organometallic Black Layer with Ag Nanoparticles for High Contrast Organic Light Emitting Display

Y.-P. Hsiao, T.-L. Chiu (Yuan Ze Univ., Taiwan), Y.-H. Lan, J.-H. Lee, and M.-K. Leung (Nat’l Taiwan Univ., Taiwan)

A low reflection and black cathode applied for high contrast organic light emitting devices (OLEDs) was demonstrated by fabricating the highly absorptive organometallic black layer (BL) inserted into the Fabry-Perot cavity. The BL was codeposited by organic matrix and Ag dopants simultaneously. The metallic nanoparticles, Ag dopants, contributed the surface plasmonic effects to enhance the absorption of organic matrix and benefited for electrical performance black cathode. Hence, a

of the high contrast OLED is as good as the reference device with Al cathode.

Poster Session 2


216

[P2-32]

Enhanced Performance of Solution-processed Organic Light-Emitting Diodes by Hole-Transporting Interlayer

C. H. Park, J. Lee, S. C. Yoon, and C. Lee (KRICT, Korea)

We fabricated multilayer organic light-emitting diodes (OLEDs) by solution-processing using an interlayer of tripheylamine-based polymer (KC-T). Because the highest occupied molecular orbital (HOMO) energy level of KC-T is higher than emitting layer constituents, the incorporation of KC-T interlayer resulted in reduction of turn-on voltage and increase of maximum

[P2-33]

Simple Fabrication of PEDOT:PSS Patterning for ITO-Free Organic Device

E.-H. Kim, M.-G. Park, S.-W. Cho, S.-Y. In, T.-H. Song, Y.-S. Kim, J.-J. Bae, and S.-W. Kang, (Kyungpook Nat’l Univ., Korea)

In this paper, fabrication of PEDOT:PSS patterning was attained by direct deposition method using 1-D moving plate. In order to shape the uniform surface of patterned PEDOT:PSS on substrate, moving plate was utilized. As a result, surface uniformity was confirmed by measuring the thickness and conductivities related to the different quantities of PEDOT:PSS. In addition, various shapes of pattern of PEDOT:PSS layer on substrate could be achieved by this technique with simplicity, low cost and convenience.

Poster Session 2


217October 11-15, 2010

[P2-34]

Enhanced Barrier Performance of Flexible OLEDs Using Multilayer Transparent Electrodes

S. Park, C. Yun, H. Cho, and S. Yoo (KAIST, Korea)

We report multilayer transparent electrodes (MTEs) coated on a polyethylene naphthalate (PEN) substrate that lead to better barrier characteristics than those of ITO under repeated bending. Lifetime of flexible organic light-emitting diodes (OLEDs) based on MTEs is shown to outperform ITO-based counterparts.

[P2-35]

High Efficiency and Low Voltage Characteristics of Electrophosphorescent Devices with Mixed and Layered Emission Layer

K. S. Whang, B. D. Chin (Dankook Univ., korea), Y. Choi, and H. J. Kim (Yonsei Univ., Korea)

The l ight emit t ing eff ic iency and the stabi l i ty of the electrophosphorescent devices with heterostructured light emission layer, either multilayer or mixing of hole- and electron-transporting materials, was characterized in terms of the charge injection behavior and balancing of devices. Selection of best combination and engineered profile of heterostructured hosts provides up to 50lm/W device with conventional transport layers.

Poster Session 2


218

[P2-36]

Light Emitting Diodes by Micro-Lens Array

S. H. Lee, H. J. Jung, Y. J. Park, J. Y. Won, S. H. Park, B. H. Kang, S. W. Lee, and S. W. Kang (Kyungpook Nat’l Univ., Korea)

This paper reports how a microlenses array can affect OLEDs for enhancing out-coupling efficiency. The OLED is manufactured with micro-lens emits more light than the OLED without the micro-lens. To form micro-lens array, the front side of the glass will be hydrophobic treatment, and a micro-lens is formed on the hydrophobic surface. Through this simple

OLED. Also, the process of polymer OLED is inexpensive, simple and flexible. Furthermore, it can implement large area display device.

[P2-37]

[Awarded Paper - Outstanding Poster Paper]Solution Processible Electrophosphorescent Devices with Heterostructures at Hole Transport Layer

J. K. Park, D. K. Yoon, B. D. Chin (Dankook Univ., Korea), and N. S. Kang (Korea Univ., Korea)

The light emitting behavior of the electrophosphorescent devices with soluble emitting layer was characterized. We have introduced the layered interface composed of a thin perfluorinated ionomer, aiming for the beneficial effect on the charge injection and transport with corresponding improvement of efficiency. Composition and thickness of the perfluorinated ionomer as interfacial layer are controlled to provide a suitable work function, optimizing the best performance of devices with molecularly doped, soluble triplet emitters.

Poster Session 2


219October 11-15, 2010

[P2-38]

Enhanced Performance on Polymer Light-Emitting Diodes (PLEDs) by using Water Soluble Conjugated Polymer

C.-G. Kim, M.-S. Koo, and D.-K. Park (Kyungsung Univ., Korea)

We have fabricated polymeric light-emitting diode(PLED) wi th mul t i - layered po lymer layer by in t roduc ing the water soluble conjugated polymer poly(9,9-bis(6’-N,N,N-trimethylammoniumhexyl) fluorene-alt-phenylene) dibromide (FPQ), by using it as an electron transport layer. The device water soluble polymer (FPQ) layer showed a luminance of 3730 cd/m2 at an applied voltage of 9.5 V than without water soluble polymer showed the luminance 897 cd/m2 at the same applied voltage. Also the external quantum efficiency of the devices where the maximum value reaches up to 0.5% for the with water soluble polymer (FPQ) layer than without water soluble polymer structure showed the 0.34% at 10V.

[P2-39]

The Layer Transfer of the Emitting Layer for Multilayered Organic Light-Emitting Diodes

T. H. Park, Y. W. Park, J. H. Choi, H. J. Choi, J.-W. Jeong, E. H. Song, B.-K. Ju (Korea Univ., Korea), and K. C. Choi (KAIST, Korea)

Efficient multilayered organic light-emitting diodes (OLEDs) have been fabricated using layer transfer technique. In soluble processes, basically, multilayer OLEDs are limited because of the intermixing of the organic materials by organic solvents. Since this layer transfer technique allows forming layers without

in a low cost process based on soluble and available of large sized substrates. In this study, the performance of multilayer OLEDs by layer transfer has achieved enhancement of 63 % of

Poster Session 2


220

[P2-40]

Effects of Side Group Substitution Position on Lumines-cence Properties; Synthesis of Bis(dipyrrinato)zinc Com-plex Derivatives

S. Lee, Y. Park, and J. Park (The Catholic Univ. of Korea, Korea)

Naphthalene group with 1- or 2- link position was substituted into 5- position of dipyrrinato zinc complex and Zn(1-NaPN)2

and Zn(2-NaPN)2, which are the derivatives of bis(dipyrrinato)zinc complex, were synthesized. Zn(1-NaPN)2 showed about 10 times stronger photoluminescence (PL) property and sharper PL spectrum compared to Zn(2-NaPN)2

state were almost identical to the result of non-doped organic

A) of Zn(1-NaPN)2 was 0.33 cd/A, which was about 4 times higher than Zn(2-NaPN)2, 0.08 cd/A. Quantum efficiency was also about 2 times higher.

[P2-41]

Solution-Processed Organic Films of Multiple Small-Molecules and White Light-Emitting Diodes

D. Wang, Z. Wu, X. Zhang, B. Jiao, S. Liang, X. Hou (Xi’an Jiaotong Univ., China), and D. Wang (Univ. of Arkansas, USA)

We found that the spin-coated films of NPB, and blends of NPB and DPVBi, though having lower densities, were more uniform than their vacuum-deposited counterparts. Using the spin-coated films of NPB:DPVBi as mixed host, doped with blue dye (4,4’-bis[2-(4-(N,Ndiphenylamino) phenyl)vinyl]biphenyl) and yellow dye (5,6,11,12-tetraphenylnaphacene), new white organic light-emitting devices (WOLEDs) were

solutionprocessed devices are better than or equivalent to the vacuum-deposited one, which was expected as an alternative route to the fabrication of small-molecular WOLEDs, avoiding the complexities of the coevaporation of multiple dopants and host materials in the vacuum deposition.

Poster Session 2


221October 11-15, 2010

[P2-43]

A Study of Red Fluorescent Material Improved Color Purity

N. R. Park, G. Y. Ryu, J. H. Seo, J. S. Park, Y. K. Kim, and D. M. Shin (Hongik Univ., Korea)

A new red fluorescent material, ABCV-CP was synthesized. Color purity of PL emission of ABCV-CP was highly improved by replacement of phenyl group with stronger electron withdrawing 4-cynophenyl group at the side of electron acceptor in the molecule. In order to obtain red light emission, emissive layer of device was fabricated by doping of ABCV-CP into MADN.

[P2-45]

Fabrication of Organic Thin Film Transistors with Short Channel Length by Reverse Offset Printing

M. Kim, J. B. Koo, Y. S. Yang, S.-W. Jung, I.-K. You (ETRI, Korea), Y.-Y. Noh (Hanbat Univ., Korea), and H.-B. Kim (Cheongju Univ., Korea)

offset printing. These patterns were used for the source/drain electrode of organic thin film transistor (OTFT). The poly(3-hexylthiophene) (P3HT) and the poly(methyl methacrylate) (PMMA) were spin-coated on top of the Ag source/drain electrode as an organic semiconductor and a gate insulator, respectively. The transfer and output characteristics of the top

Poster Session 2


222

[P2-46]

Practical Printing Method of Solution Processed OTFT Backplane for Electrophoretic Display

M.-W. Lee, M.-Y. Lee, E.-K. Lee, and C.-K. Song (Dong-A Univ., Korea)

In this paper, The OTFT backplane with bottom contact structure on plastic substrate using all solution processes will be discussed. The backplane consisted of 192×150 pixels, containing 1 OTFT and 1 capacitance in each pixel. Each layer of OTFT was used combining process to overcome the problem of printing technique. The gate electrodes were fabricated by screen printing with wet etching. The source drain electrodes and OSC were made by ink jet printing. Finally, The EPD panel successfully displayed test patterns.

[P2-47]

Extraction of Bulk and Interface Trap Density according to Energy Distribution in Pentacene Thin Film Transistor

S.-H. Jeong and C.-K. Song (Dong-A Univ., Korea)

In this paper, we extracted energy density of bulk and interface trap states in pentacene semiconductor on PVP gate dielectric by using temperature dependent space charge limited current(TDSCLC) and temperature dependent transfer characteristics(TDTC) respectively.The bulk trap states exhibited a large state at the energy of 1.3 eV and the interface trap states also produced a large energy states at 1.2 eV. The origin of the states was investigated and will be presented..

Poster Session 2


223October 11-15, 2010

[P2-48]

Fabrication of Source and Drain Electrodes for OTFTs by using Brush Painting with PEDOT/PSS

J.-C. Choi, M.-W. Lee, E.-K. Lee, and C.-K. Song (Dong-A Univ., Korea)

This paper reports a simple way to fabricate source and drain electrodes by using brush painting method. After oxygen plasma treatment on the selective areas for S/D electrodes, which were predefined by photolithography, the high conductive PEDOT/PSS was applied by brush painting. The channel length of 20 um was easily patterned by this method. Pentacene OTFTs

2/V and the current on/off current ratio of 9.07×106.

[P2-49]

Fabrication of Ag Gate Metal Lines Of OTFT-Backplane with Roll-Type Micro-Contact Printing

J.-H. Kim, M-Y. Lee, Y.-J. Park, and C.-K. Song (Dong-A Univ., Korea)

In this paper, we fabricated the conductive metal line by roll type micro-contact printing(uCP) with PDMS stamp using nano Silver ink. The ink transfer characteristic during printing was improved by optimizing a coating condition, inking speed, printing speed, printing pressure and Ag content. Under the optimum condition, conductive metal line with a minimum line width of 30um, a

resistance of 2.08×10-5 2.

Poster Session 2


224

[P2-50]

Patterning of Gate Electrodes of OTFT-backplane with Reverse off-set Printing Combined by Screen Printing

J.-E. Park, M.-Y. Lee, and C.-K. Song (Dong-A Univ., Korea)

In order to fabricate the gate electrode for OTFT by screen printing combined with wet-etching, the etching resist ink was printed by using reverse off-set printing. To optimize the ink coating property by slit coating, the contact angle, surface tension of solvent and bar-coated area of etching resist ink were investigated. Etching resist(ER) ink with diluting by ethyl acetate with low contact angle and low surface tension. Based on this, ink was produced with selected solvent to lower surface tension and apply uniform large area coating without pinhole

created in large area coating. Through this, Ag ink printed OTFT electrode with large area of 6

[P2-51]

Morphology Control of TIPS Pentacene with Temperature

M.-J. Kim, G.-S. Ryu, J.-W. Hwang, and C. K. Song (Dong-A Univ., Korea)

In this paper, we controlled crystal morphology of TIPS pentacene by adjusting the moving velocity of edge contact line of droplet to be matched with the velocity of crystal formation at the edge. The way to control the contact line velocity was to apply heat to substrate during ink jetting TIPS pentacene. At T=60 oC the two velocities were matched to each other producing the uniform crystal layer. The performance was improved by exhibiting the mobility with 0.12 ㎠/V·s and Ion/Ioff ratio 1.15ⅹ106, sub-threshold slope 0.1 V/decade.

Poster Session 2


225October 11-15, 2010

[P2-53]

[Awarded Paper - Outstanding Poster Paper]Demonstration of Ring Oscillator based on Flexible Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors

J. W. Choi, M. H. Choi, M. Mativenga, and J. Jang (Kyung Hee Univ., Korea)

Ring oscillator implemented with high performance a-IGZO TFTs, with an etch stopper, are fabricated on a PET substrate by using polyimide and glass carrier substrate. After TFT process, the samples are attached to PET substrate. The TFTs

2/Vs and gate voltage swing of 0.14 V/dec. For a VDD of 15 V, an eleven-stage ring-oscillator

stage.

[P2-54]

Memory Reduction of Look-Up Table in Novel Look-

Zone Plate

D.-W. Kwon, S.-C. Kim, and E.-S. Kim (Kwangwoon Univ., Korea)

Recently, a novel look-up table method to dramatically reduce the number of pre-calculated interference patterns required for generation of digital holograms was proposed. In this

in geometry. Thus in this paper, we proposed the memory

some experimental result, the memory could be reduced by 50%.

Poster Session 2


226

[P2-55]

Reduction of Look-Up Table Size by using The Relation-ship between Pixel-Pitch Of Hologram and Reconstruc-tion Distance

J.-H. Kim, S.-C. Kim, and E.-S. Kim (Kwangwoon Univ., Korea)

Recently, a novel look-up table (N-LUT) method to dramatically reduce the number of pre-calculated interference patterns required for generation of digital holograms was proposed. In this method, the size of LUT is determined by the amount of shift of the PFP. Thus, if the resolution of object is increased or pixel pitch of hologram is decreased, the size of LUT is increased. Therefore, in this paper, we propose the memory reduction method using the relation of pixel pitch of hologram and reconstruction distance. Some experiments with a test 3-D object are carried out and the reduction ratio of LUT is analyzed.

[P2-56]

Defect Detection of Metal Bellows Welding by 3D Display and Image Processing

H.-D. Lee, M.-C. Park (KIST, Korea), K. J. Cheoi (Chungbuk Nat’l Univ., Korea), and J.-Y. Son (Daegu Univ., Korea)

Generally bellows and bellows applied products are used to

form of bellows is as pairs of washer-shaped discs of thin sheet metal stamped from strip stock. Welding has to be done with very accurate and detailed operation because this pipeline will control the flow of high temperature and high pressure fluids or gas. To secure the safety standards defect detection from welding is very important. In this paper a method of defect detection by 3D display and image processing is proposed. 3D display is used for the workers to observe the bellows instead of looking through microscope. Image processing is performed for automatic measurement. Experimental results show that automatic welding detection is done within one tenth of permitted error range.

Poster Session 2


227October 11-15, 2010

[P2-57]

Accelerating Numerical Reconstruction of Digitally Recorded Holograms using CUDA enabled GPU

Z. Ali, M.-L. Piao, J.-H. Park, and N. Kim (Chungbuk Nat’l Univ., Korea)

In this study we have exploited the parallel nature of the computations involved in the process of numerical reconstruction of digitally recorded holograms and utilized CUDA enabled graphics processing unit (GPU) to accelerate the reconstruction process.

faster than that of central processing unit (CPU).

[P2-58]

Stereoscopic 3D Display with View Control Film for Side by Side Cross Eyed Viewing

M. Kuwata and K. Sakamoto (Konan Univ., Japan)

We developed a glasses-free 3D stereoscopic display using

3D viewing. The observer can independently watch overlapped stereoscopic images for left and right eyes without special glasses such as polarized glasses.

[P2-59]

[Awarded Paper - Outstanding Poster Paper]Full-Parallax 360 Degrees Integral Imaging Display

M.-U. Erdenebat, G. Baasantseren, J.-H. Park, N. Kim, and K.-C. Kwon (Chungbuk Nat’l Univ., Korea)

Full-parallax, which horizontal viewing angle is increased to 360 degrees integral imaging is proposed. The elemental image set is projected by the high-speed DMD projector and integrated into three-dimensional image by the lens array. The integrated three-dimensional image is relayed to the mirror screen that rotates in synchronization with the DMD projector such that the integrated three-dimensional images are presented to desired direction accordingly. By this method, full-parallax three-dimensional image with 360 degree horizontal viewing angle can be achieved.

Poster Session 2


228

[P2-60]

Compression applying to the Regional Correlation of Elemental Images on MALT in Three-Dimensional Integral Imaging

C.-H. Yoo, H.-H. Kang, and E.-S. Kim (Kwangwoon Univ., Korea)

This paper addresses the compression of elemental image array (EIA) generated from the moving array lenslet technique (MALT) based on MPEG-4. To enhance the similarity in each EIA picked-up by MALT, several EIAs obtained from MALT are regenerated by the collection of an elemental image occupied at the same position in each EIA. The newly generated each EIA has high similarity among adjacent elemental images. From some experiments we obtained the improved compression ratio of 12% compared to the unhandled compression scheme.

[P2-61]

The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor for Thin-Film Transistor

W.-S. Choi (Hoseo Univ., Korea)

Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor. The average

oCto 150o

the use of XRD, AFM and XPS. Thermal annealing and seed

composition.

Poster Session 2


229October 11-15, 2010

[P2-62]

Anchoring Energy of Polyimide Containing Photo-sensitive Methoxy Cinnamate

S. Y. Kim, N. R. Park, and D. M. Shin (Hongik Univ., Korea)

We studied that effect of polarized UV light on rubbed polyimide film. Anchoring energy of liquid crystal with aligning surface was measured. Irradiation of depolarized UV light on rubbed Polyimide film suppressed effective anchoring energy and linearly polarized UV light on rubbed polyimide film controlled anchoring energy effectively. Polyimide film containing 2-methoxy cinnamate can control the photo-alignment layer easily due to its photo-sensitivity.

[P2-63]

Selective Wettability-Based Patterning of Color Filters by Micromolding in Capillaries

J.-H. Hong, S.-H. Lee, and S.-D. Lee (Seoul Nat’l Univ., Korea)

selective wettability patterning by micromolding in capillaries. The hydrophobic polymer patterns formed in the capillaries provide selective generation and protection of color filter patterns through a simple coating process. It was found that color filters fabricated using our method show well-defined patterns with color uniformity.

Poster Session 2


230

[P2-64]

Fabrication of Thin Film Transistor with Solution-processed Nitrogen doped Indium-Zinc Oxide

S. Ha, B.-J. Kim, Y.-H. Kim, T.-S. Yoon, Y.-S. Kim, and H. H. Lee (Myongji Univ., Korea)

Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer doped with nitrogen by the solution-processed deposition method were fabricated and their TFTs characterizations were discussed. Heavily doped Si was used as a common gate and PECVD silicon nitride (SiNX) was used as a gate dielectric material for the TFT. The nitrogen doping had an effect of reducing the leakage current of the fabricated TFT.

[P2-65]

Bias Stress Stability of Organic Thin Film Transistors with Cross-Linked Polystyrene Gate Insulator

J. C. Noh, J. Park, D. W. Kim, J. S. Choi (Hongik Univ., Korea), and J. W. Lee (LG Display Co., Ltd., Korea)

This paper reports on the electrical stability of organic thin-film transistors (OTFTs) with the cross-linked polystyrene (xPS) insulators. Under DC bias stress conditions, the OTFTs with a pristine PS insulator exhibited pronounced threshold voltage shifts in contrast to the cases of the devices with the xPS insulators. It is found that cross-linking processes, such as the amount of cross-linking agent and the cross-linking time, strongly influence on the consequent electrical stability of the OTFTs. We discuss details of the degradation mechanisms in terms of the threshold voltage shift direction which intimately depends on cross-linking processes of the PS insulators.

Poster Session 2


231October 11-15, 2010

[P2-66]

Consideration of Polymer-Dielectric Molecular Weight for Gate-Leakage Current in Organic Field-Effect Transistors

D. Kim, J. Park, J. Noh, S. Lee, and J. S. Choi (Hongik Univ., Korea)

(PS) gate dielectric layer on the performance of pentacene-

layers are fabricated by using different molecular weights of PS. The OFET having the high molecular weights of PS gate dielectric layer exhibits the most pronounced drain currents as well as mobility among the fabricated devices. In this work, the emphasis is based on the significant relation between the surface characteristics of gate dielectric layer and the performance of OFET.

[P2-67]

Synthesis of New Single Black Pigments Based on Azo and Anthraquinone Moieties for LCD Black Matrix

J. Jung, Y. Park, and J. Park (The Catholic Univ. of Korea, Korea)

Based on azo group and anthraquinone moiety, new black matrix pigment materials AAQ and DAAQ were synthesized for the first time through Suzuki C-N coupling. As a result of verifying UV-visible absorption spectra of the synthesized materials, DAAQ was found to absorb the entire visible region

of 8.1 × 103 L/cm·mol. Realization of black color using a single material is expected to be useful for black matrix application. Also in film state made through spin coating, both AAQ and DAAQ absorbed the entire visible region.

Poster Session 2


232

[P2-68]

Optically Clear Hard Coat Film with Low Curl and Anti-Smudge Properties for Polarizing Film

S.-C. Hwang, B.-S. Kim, D.-Y. Kim, and K.-K. Kang (Cheil Industries Inc., Korea)

The UV-curable hard coating solutions were prepared with

additives. The prepared hard coating material was coated on TAC film. The hard coated film shows extremely low curl property and highly stable anti-smudge property. These unique properties are maintained through the severe saponification process.

[P2-69]

Characteristic of Zn:SnO/Ag/Zn:SnO Multilayer Electrodes Grown by DC/RF Magnetron Sputtering for Inverted Organic Solar Cells

Y.-Y. Choi, K.-H. Choi, and H.-K. Kim (Kyung Hee Univ., Korea)

Zn-doped SnO (ZTO)/Ag/ZTO multilayer electrodes with low electrical resistance and high optical transmittance were prepared by DC/RF magnetron sputtering system. At optimized growth condition, surface plasmon effect had caused by inserted Ag layer. As a result, we could obtain the ZTO/Ag/ZTO multilayer electrodes having low resistivity of 4.07×10-5

indicates that ZTO/Ag/ZTO multilayer electrodes are promising low-cost and low-temperature processing electrode scheme for organic solar cells.

Poster Session 2


233October 11-15, 2010

[P2-70]

Thin Film Passivation for Organic Light Emitting Diodes with SiON/Ag/SiON Multilayer Grown on Flexible PES Substrate by Roll-To-Roll Sputtering System

C.-K. Cho, Y.-S. Park, J.-A. Jeong, and H.-K. Kim (Kyung Hee Univ., Korea)

We have investigated the characteristics of SiON/Ag/SiON multilayer passivation grown by specially designed roll-to-roll (RTR) sputtering system using the PES substrate for organic light emitting diodes. The SiON/Ag/SiON multilayer thin film passivation on a PES substrate had a high transmittance of 87.7 % and low water vapor transmission rate (WVTR) had low value at optimized conditions. Using field emission scanning electron microscope (FESEM) examinations. This indicates that

passivation scheme for organic light emitting diodes.

[P2-71]

Optical Sensitivity of P-I-N Diodes using Silicon Nano-Clusters Embedded in Silicon Rich Silicon Nitride Films

K.-M. Lee, J.-D. Hwang, Y.-J. Lee, K.-S. No, K.-S. Keum, and W.-S. Hong (Univ. of Seoul, Korea)

We have investigated the optical sensitivity on electrical properties of silicon-rich silicon nitride films for photo sensor

by catalytic chemical vapor deposition technique at substrate temperature below 200℃. Silicon nano-clusters inside there

microscope. P-i-n diodes were fabricated by using p-type silicon

films. Photo/dark currents of the p-i-n diodes were measured at reverse bias. Photo/dark current ratios were controlled by variation of mixture ratios in source gas of the intrinsic silicon-

Poster Session 2


234

[P2-72]

The Novel Compensation Film for IPS-LCDs

J. H. Lee, S. H. Choi, S. H. Hwang, I. Jeon, J. H. Kim, M. K. Park, H. S. Heo, W. K. Park, H. S. Kim, K. J. Kim, and M. C. Jun (LG Display Co., Ltd., Korea)

We have successfully developed a novel compensation film which possesses required optically compensating conditions for IPS-LCD. This novel film has optical properties of biaxial characteristics (nx>nz>ny). In the case of conventional

of film applied hence expensive and intricate manufacturing processes. In the novel compensation film that we have developed, however, should provide solutions to those problems and ultimately enhance the compatibility of IPS-LCDs

[P2-73]

Development of High Transmittance Polarized Film

J. S. kim, E. M. kim, M. Y. Lee, T. Noh, H.-R. Chung, C. S. Lee, and K. Chung (Cheil Industries Inc., Korea), H. Do and D. Suh (Samsung Electronics Co., Ltd., Korea)

These days, high transmittance polarized film is required for power saving in LCD Panel. So, we studied for keeping contrast ratio and increasing luminance compared with commercial products. White luminance was improved to 3.6%. Also, contrast ratio was decreased to 0.6%. It was confirmed that polarizing properties are equal to commercial products.

Poster Session 2


235October 11-15, 2010

[P2-74]

Investigation on Etching Process Effect with Low Resistivity Aluminum in Thin Film Transistor Fabrication Process

X. Liu, J. S. Xue, S. Y. YOO, Z. Y. Xie, and X. Chen (BOE Tech. Group Co., Ltd., China)

We investigated multi-etching effect with lower lower resistivity resistivity Al (aluminum) metal material in 4-mask process. Results indicated that forming source/drain electrode by wet etching process can increase active tail width, and reduced about 1 um active tail width by optimized multi-etching process. This can improve the aperture ration of TFT and design margin. With optimized process, gains good TFT electrical characteristics.

[P2-75]

[Awarded Paper - Outstanding Poster Paper]Optimum Single Slit Design Guide applied by High Performance Product

W.-S. Yoon, S.-K. Kim, B.-J. Cha, K.-Y. Kim, J.-W. Koh, J.-H. Rhee (Beijing BOE Display Tech. Co., Ltd., China), S.-J. Choi, and G. Hui (BOE Optoelctronics Tech. Co., Ltd., China)

Optimum single slit mask design applied by gray-tone photolithography had been established by simulation and experiments. We found out that the transmittance of single slit was influenced by TFT channel length, size and shape.

single slit mask. Consequently we obtained the optimum design

characteristics.

Poster Session 2


236

[P2-76]

Polymer Dispersed Liquid Crystal Films for Electro-optical Sensor in TFT Array Tester

S. Park, Y. B. Kim, J. D. Cho, S. S. Lee, K. S. Kim (Q-Sys Co., Ltd., Korea), and J. W. Hong (Chosun Univ., Korea)

Polymer-dispersed liquid crystal (PDLC) films were used for the electro-optical modulator for the sensor in TFT array tester.

roll coating and photopolymerization-induced phase separation processes. Electro-optical factors in PDLC film affecting the inspection quality were examined.

[P2-77]

Improvement of Breakdown Characteristics in RIE Dry Etching for TFT Fabrication

I. K. Kwon, S. C. Koo, J. J. Kwon, Y. G. Kim (Samsung Mobile Display Co., Ltd., Korea), and S. Y. Han (Samsung Electronics Co., Ltd., Korea)

The improvement of breakdown characteristics in RIE dry etcher was achieved by emboss-shaped and anodized electrode. The impedance of anodized electrode was increased due to the dense film and reduced porosity. In addition, the edge round electrode is essential in increasing the breakdown voltage. These methods have a potential for future dry etcher technology.

Poster Session 2


237October 11-15, 2010

[P2-78]

Comparison between Pure Molybdenum and Molybdenum Alloys for Copper Wet Patterning

B.-H. Seo, J. H. Seo (Korea Aerospace Univ., Korea), J.-H. Jeon, H. Choe (Aerospace Univ., Korea), and J. Winker (PLANSEE Metal GmbH, Austria)

The copper metallization becomes more significant issue in a high frequency driving TFT-LCD with large sized panel. Since copper has a low adhesion force against the glass substrate, copper is inevitably used with an aid of an adhesive metal layer such as Ti, Ta and Mo. When dissimilar metals like copper and molybdenum are exposed together in a wet etchant, a typical galvanic reaction occurs and this results in an undercutting of copper line or partial stains on the metal surface after drying. Especially, it is well-known that the suitable taper angle of Cu/Mo is difficult to obtain. Such failures often lead to a bad performance of thin film transistor and the display quality. Effect of acetic acid on wet galvanic corrosion behavior of DC magnetron sputtered the double layers of Mo and copper on the glass substrate has been examined. Addition of acetic acid

between copper and pure molybdenum.

[P2-79]

[Awarded Paper - Outstanding Poster Paper]Directly Fabricated Microlenses with Easily Tuned Size and Shape by Ink-jet Printing Technology

J. Y. Kim J. Brugger (EPFL, Switzerland), L.-M. Do (ETRI, Korea), K. Pfeiffer A. Voigt, and G. Gruetzer (Micro Resist Tech. GmbH, Germany)

Ink-jet printing technique allows locally and precisely dispensing materials for the manufacturing of micro-scale structures. We present the fabrication of plano-convex microlenses using a hybrid organic-inorganic photo-curable polymer diluted in a gamma-butyrolactone (GBL). Microlenses are printed on a glass substrate having different number of drops per lens and different

conditions on the size and shape of the printed microlenses, which can be affected by wetting properties. Further geometrical and optical characterizations are presented in detail.

Poster Session 2


238

[P2-80]

Organic Light-Emitting Diodes Fabrication by Electrospray Deposition Process

W. Hwang, N. Kim, and H. Chae (Sungkyunkwan Univ., Korea)

We have demonstrated organic light emitting diodes (OLED) fabrication with electrospray deposition (ESD) as a solution process alternative. OLED fabricated with ESD shows equal performance to that with spin coating in terms of surface smoothness and brightness. Using this process we could make

[P2-81]

Fabrication of Ag Gate Electrodes of Organic Thin Film Transistors with the Various Printing Technologies.

M.-Y. Lee, J.-H. Kim, J.-E. Park, and C.-K. Song (Dong-A Univ., Korea)

In this paper, we have fabricated Ag gate electrodes of organic thin film transistors by screen-printing combined with wet-etching process and by direct microcontact printing process. The etching resists for wet-etching were patterned by roll type microcontact printing and reverse offset printing. The screen-printed and wet-etched Ag electrodes with microcontact printed and reverse offset printed etching resist patterns exhibited both thicknesses of ~70 nm, resistivities of ~10-6

line widths of ~15 um and 50 um, respectively, producing good geometrical and electrical characteristics for gate electrode. And direct microcontact printed Ag electrode showed a line width of 30 um, a thickness of ~300 nm, a roughness less than 20 nm,

-5

Poster Session 2


239October 11-15, 2010

[P2-82]

The Relationship among CD Bias, Profile Angle, Film/Photoresist Interface Adhesion, Film Thickness and Etch Time for Isotropic Wet Etch of Single Film

Y.-J. Song, K. Gao, D.-O. Oh, S.-Y. Yoo, Y.-S. Song, J.-H. Rhee, and J.-W. Koh (BOE Optoelctronics Tech. Co., Ltd., China)

and reliability should be obtained by control the line width through the CD bias management and maintaining the proper step coverage of insulator layer on electrode through the control

In this paper, we will find out how CD bias and profile angle are changed by etch rate and adhesion between film and

[P2-83]

Design and Simulation of Color Filter Arrays for Mura-free TFT LCD Panel

C. H. Han and S. Y. Han (Samsung Electronics Co., Ltd., Korea)

The cause of black mura has been investigated using simulator that accounts for specific features of LC disclination. On the highly overlapped CF patterns, a reverse tilt domain was observed located outside of BM, resulting in the formation of mura over entire panel. Several methods for protecting mura were provided.

Poster Session 2


240

[P2-84]

Mechanism for Au Migration in the Driver IC Bumps on the LCD Module Process

Y. K. Lee, M.-K. Choi, and S. Y. Han (Samsung Electronics Co., Ltd., Korea)

We reported Au migration phenomena which cause the

The Au migration was accelerated by the organic particles between Au bumps in which voltage was applied, leading to the moving of Au. This implied that the particle control is the main factor in reducing the migration of metal element.

[P2-85]

Synthesis of Conductive Ink with Copper Nanoparticles Fabricated by Dry Process

H.-Y. Kim, M.-K. Kang, Y.-R. Lee, Y.-S. Kim, J.-W. Kim, and M.-K. Kwak (KETI, Korea)

Copper nanoparticles were fabricated by inert gas condensation (IGC). Fabricated particles were synthesized with octanethiol for preventing oxidation using vapor-self assembled monolayer (VSAM) method. Fabricated particle size was identified as 50 nm using field emission scanning electron microscopy (FE-SEM). Effect of coating with octanethiol was identified using transmission electron microscopy (TEM). Ink was synthesized with various organic solvents and copper nanoparticle fabricated in this study. The copper nano ink was successfully maintained in 4 weeks without oxidation.

Poster Session 2


241October 11-15, 2010

[P2-86]

[Awarded Paper - Outstanding Poster Paper]Horizontal Dipping Method for Simple Fabricating Large OLEDs for Mobile Displays

B. Park, H. G. Jeon, and K.-H. Choi (Kwangwoon Univ., Korea)

Horizontal dipping (H-dipping) was studied for fabricating OLEDs. Uniform films were fabricated by concave meniscus of used solutions. H-dipped OLEDs were fabricated with high

m2. Patterned OLEDs on 5.6’’ substrates were successfully fabricated, implying that H-dipping holds great potential for large-area Mobile OLEDs.

[P2-87]

Wave Plate Films for Mobile Display

B. Park, Y. H. Huh, and J. C. Shin (Kwangwoon Univ., Korea)

We present highly polarized light emissions from an OLED with a photonic reflecting polarizer and a quarter wave plate films. It was found that the polarization direction of emitted electroluminescent light corresponded to the passing axis of the

polarized electroluminescence over 10,000 cd/m2 was produced with high peak efficiency of 7 cd/A and high polarization ratio over 30.

Poster Session 2


242

[P2-88]

Image Quality Enhancement Algorithm by using Picture Naturalness Index and Minimizing Loss of Picture Colorfulness

H. Lee and K.-W. Whang (Seoul Nat’l Univ., Korea)

A display is a viewer-judging product and thus the perceptive

indicators. Most image quality model assumes major two

constraint to determine image quality. In this paper, we focused on image naturalness. Using the naturalness index, we corrected pixels to show more evenly natural. In this process an alternative parameter of colorfulness can be decreased. So, we added extra step to compensate the image colorfulness using color difference. Based on this electro physical value, simulated

by subjective experiment, with 15 viewers.

[P2-89]

Subjective Study on the Preference of Tone Reproduction Curves in LCD Tvs

M. -C. Byun, J. -U. Kwon, H. -I. Baek, M. -J. Lim, and H. -H. Shin (LG Display Co., Ltd., Korea)

The perceived preference was subjectively compared for the

curves from various LCD TV sets. As a result, in the case of image with human faces, the tone reproduction curves with low contrast, which made brighter human faces and more detailed expression in lower gray region, were found to be preferred while the tone reproduction curves with high contrast were found to be preferred in case of image without faces. Therefore, the existence of human faces in images has to be considered in the selections of tone reproduction curve.

Poster Session 2


243October 11-15, 2010

[P2-90]

Color Matching Technology with Color Filter and Light Source based on W-LED BLU

B. G. Ahn, Y. J. Kim, S. W. Ji, I. C. Park, M. C. Jun, and I. J. Jung (LG Display Co., Ltd., Korea)

In this paper, we have proposed color matching technology with color filter and light sources from 9-block experiments based

which is optimized with W-LED BLU. This technology promised to enhance luminance and ITU-R BT 709 coverage better than Liquid Crystal Display (LCD) which is applied conventional color

[P2-91]

A New Evaluation Method of Color Viewing Angle(CVA)

J. Y. Kim, J. R. Kim, S. W. Jung, H. N. Kim, and J. Y. Kim (LG Display Co., Ltd., Korea)

As display industries have been growing rapidly, diverse research facilities have been used for themeasurement of Color Viewing Angle(CVA). According to ISO-9241-307, color difference, delta u’v’, should be less than 0.02 which could be perceived by human. Recently, color difference can be reduced ergonomically with ease and accuracy.

[P2-92]

Effect of Ethylene Glycol of Photonic Gel Films

S. W. Lee, S. E. Shin, and D. M. Shin (Hongik Univ., Korea)

Block copolymers have been investigated for fabricating functional nanomaterials due to their properties of self-assembly. We prepared polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) lamellar films which is hydrophobic block-hydrophilic polyelectrolyte block polymer have 57 kg/mol-b-57 kg/mol. To study of effect of photonic gel films by ethylene glycol, UV-visible absorption spectra were measured as different concentrations of ethylene glycol.

Poster Session 2


244

[P2-93]

Development of Transparent Bistable Liquid Crystal Display

D. K. Kim, H. Y. Lim, M. K. Lee, H. S. Song, K. H. Park, J. H. Lee, and B. K. Kim (LG Display Co., Ltd. Korea)

The TBL(transparent bistable liquid crystal display) which has memory and transparency characteristics is developed. The TBL is a specially designed cholesteric liquid crystal display. The

Adding a TBL on a conventional TFT LCD, it can be used as a multi-functional display device.

[P2-94]

Agglomeration of Ag-Based Reflective P-Type Ohmic Contact in GaN LEDs

J. H. Son, Y. H. Song, B. J. Kim, and J.-L. Lee (POSTECH, Korea)

In this work, we demonstrate the modulation of residual strain in Ag film using Ni/Ag multi-layer structure to improve the Ag agglomeration resistance and the thermal stability of Ag film at high temperature. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensile strained after annealing. The tensile stress in Ag layer could reduce the thermal compressive stress at high

of thermal stability in Ni/Ag multi-layer Ohmic contact to p-type

multi-layer structure should be very useful for the development of thermally stable Ag-based contact.

Poster Session 2


245October 11-15, 2010

[P2-95]

Edge Local Dimming Technology for Dual Light Guided Plate Backlight Unit

J. Y. Song, S. S. Jung, J. M. Moon, J. W. Lee, Y. K. Hwang, and I. J. Jung (LG Display Co., Ltd., Korea)

In this paper, a method of realizing local dimming technology for the edge type BLU is proposed to further reduce power consumption of edge type BLUs while increasing a Dynamic Contrast Ratio (DCR). In particular, an edge type BLU with a double Light-Guided Plate (LGP) structure is demonstrated with improved power consumption and DCR.

[P2-97]

Novel Conjugated System of Polymeric Semiconducting Polythiophene Derivatives with Alkylthiophene Side Chain: High Solubility and Oxidation Stability

J. W. Park, D.-M. Kang, Y.-H. Kim, S.-K. Kwon (Gyeongsang Nat’l Univ., Korea), D. H. Lee, D. S. Chung, and C. E. Park (POSTECH, Korea)

We report the synthesis of polythiophene derivatives that contain thienyl side chains, using synthetic strategies that achieve high organic semiconductor field effect mobilities by

effect mobilities, up to 0.050 cm2/Vs and 0.003 cm2/Vs from poly(3,3’’’-didecylated-thiophenyl sexithiophene) (PDTST) and poly(3,3”’-didecylated-thiophenyl quaterthiophene) (PDTQT), respectively.

Poster Session 2


246

[P2-98]

Development of Yellow Color Resist for Multi-Primary-Color Displays

S.-Y. Choi, S. R. Nam, J.-H. Ryu, M.-H. Chang, G.-S. Han, and T.-W. Chang (Cheil Industries Inc., Korea)

The Multi-Primary Color (MPC) display is one of the most remarkable achievements as a wide color gamut display device in recent years. As the yellow color resist is not usually used in conventional RGB type displays, it is not making satisfactory development. This paper focuses on a development of yellow color resists for 4-Primary-Color display with the minimum amount of change.

[P2-99]

Development of Low Temperature High Quality ITO Thin Film for Flexible Microelectronic Device based on Plastic substrate by Magnetic Field Shielded Sputtering Process

Y. Jang, Y. Lee, J. Lee, and M. Hong (Korea Univ., Korea)

We developed the Magnetic Field Shielded Sputtering (MFSS) process as a room temperature deposition process for ITO electrode deposition on plastic substrates. To evaluate the effect of the MFSS system, we compared the MFSS processed film with the DC magnetron sputtering (DMS) processed ITO thin film under the same deposition conditions. The MFSS processed ITO thin film showed significantly lower resistivity (4.7×10-4 2/V·s) than

-3 2/V·s) at room temperature.

Poster Session 2


247October 11-15, 2010

[P2-100]

Solution- and Non-Vacuum-Based Vapor Deposition Methods for Oxides and Organic Materials

T. Ikenoue, N. Kameyama, and S. Fujita (Kyoto Univ., Japan)

We report a safe, simple, and cost-effective deposition technology extendable to large area substrates. As examples, deposition characteristics of transparent conductive ZnO and PEDOT:PSS films are demonstrated. The up-to-date

expected to be lowered by further optimization of deposition conditions. PEDOT:PSS thin films exhibited reasonably high conductivity (442 S/cm) as this material and high transmittance

and may be useful in the future display technology.

[P2-101]

The Improvement of Holographic Reconstruction Images using a Common Diffuser Film

G.-S. Lee, M.-S. Yang, Y.-K. Hwang, I.-J. Chung, and M.-S. Yoon (LG Display Co., Ltd., Korea)

In General, reconstructed holographic images are not easily distinguishable due to the problem of overlapping between strong zeroth-order diffraction beam and relatively weaker other higher order diffraction light. In this paper, we proposed a idea that the reconstructed holographic image is substantially improved to be clear and distinguishable, i.e., suppressing the zeroth-order diffraction component using only a sheet of diffuser

experiments.

248

Organizing Committee

◈ General Chair Oh-Kyong Kwon (Hanyang Univ., Korea)◈ General Co-chair Ki-Woong Whang (Seoul Nat’l Univ., Korea)

◈ Executive CommitteeExecutive Committee Chair Sin-Doo Lee (Seoul Nat’l Univ., Korea)Program Chair Tae-Hoon Yoon (Pusan Nat’l Univ., Korea)General Secretary Hyun Jae Kim (Yonsei Univ., Korea)

Byung Doo Chin (Dankook Univ., Korea)Program Secretary Cheol-Hee Moon (Hoseo Univ., Korea)

Byong-Deok Choi (Hanyang Univ., Korea)

◈ International Advisory CommitteeMunisamy Anandan (SID, USA)Morris Chang (TSMC, Taiwan)Won Kie Chang (Samsung Electronics Co., Ltd., Korea)Paul Drzaic (SID, USA)Min-Koo Han (Seoul Nat’l Univ., Korea)Michael Heckmeier (Merck KGaA, Germany)Ho Moon Kang (Samsung Mobile Display Co., Ltd., Korea)Hyung Moon Kim (SEMES, Korea)Young Soo Kwon (LG Display Co., Ltd., Korea)Gianfranco Lanci (Acer Inc., Korea)Jong Duk Lee (Seoul Nat’l Univ., Korea)Sang Wan Lee (Samsung, Korea)Myung Hwan Oh (Dankook Univ., Korea)Woo Hyun Paik (LG Electronics Inc., Korea)Peter T. C. Shih (PIDA, Taiwan)Eun Sun Shin (SFA, Korea)Heiju Uchiike (Former Professor of Kyung Hee Univ., Korea)

249October 11-15, 2010

Program Chair Tae-Hoon Yoon (Pusan Nat'l Univ., Korea)Program Secretary Cheol-Hee Moon (Hoseo Univ., Korea)

Byong-Deok Choi (Hanyang Univ., Korea)

[Active-Matrix Devices]Chair Takashi Noguchi (Univ. of the Ryukyus, Japan)Co-chair Mun Pyo Hong (Korea Univ., Korea)Secretary Hyun Jae Kim (Yonsei Univ., Korea)

Wan-Shick Hong (Univ. of Seoul, Korea)Member Byung Seong Bae (Hoseo Univ., Korea)

Yvan Bonnassieux (Ecole Polytechnique, France)Guglielmo Fortunato (IMM-CNR Rome, Italy)Yong-Min Ha (LG Display Co., Ltd., Korea)Mike Hack (Universal Display Corp., USA)Jae Kyeong Jeong (Inha Univ., Korea)Jerzy Kanicki (Univ. of Michigan, USA)Chi Woo Kim (Samsung Mobile Display CO., Ltd., Korea)Joohan Kim (Samsung Electronics Co., Ltd., Korea)Mutsumi Kimura (Ryukoku Univ., Japan)Sang Yeol Lee (KIST, Korea)Mitsutoshi Miyasaka (Seiko Epson Corp., Japan)Sang-Hee Park (ETRI, Korea)Rudd E.I. Schropp (Utrecht Univ., Netherlands)Yukiharu Uraoka (NIST, Japan)Yung-Hui Yeh (ITRI, Taiwan)

[LC Technologies]Chair Liang-Chy Chien (Kent State Univ., USA)Co-chair Daeseung Kang (Soongsil Univ., Korea)Secretary Chang-Jae Yu (Hanyang Univ., Korea)Member Seonhong Ahn (Samsung Mobile Display Co., Ltd., Korea)

Vladimir G. Chigrinov (The Hong Kong Univ. of Science and Tech., Hong Kong)Suk-Won Choi (Kyung Hee Univ., Korea)Hyun Chul Choi (LG Display Co., Ltd., Korea)E-Joon Choi (Kumoh Nat'l Inst. of Tech., Korea)Wolfgang Haase (Darmstadt Univ. of Tech., Germany)Won-gun Jang (KOPTI, Korea)Jae-Hoon Kim (Hanyang Univ., Korea)Jong Hyun Kim (Choongnam Nat'l Univ., Korea)

Program Committee

250

Hak-Rin Kim (Kyungpook Nat'l Univ. Korea)Munehiro Kimura (Nagaoka Univ. of Technology, Japan)Lachezar Komitov (Goteborg Univ., Sweden)Soon-Bum Kwon (Hoseo Univ., Korea)Gi-Dong Lee (Dong-A Univ., Korea)Myong-Hoon Lee (Chonbuk Nat'l Univ., Korea)Seung Hee Lee (Chonbuk Nat'l Univ., Korea)Masanori Ozaki (Osaka Univ., Japan)Kyunil Rah (LG Chem., Korea)Dong Myung Shin (Hongik Univ., Korea)Qiong-Hua Wang (Sichuan Univ., China)

[LED/BLU/Lighting]Chair Mikio Takai (Osaka Univ., Japan)Co-chair Young-Rae Cho (Pusan Nat'l Univ., Korea)Secretary Kyu Chang Park (Kyung Hee Univ., Korea)Member Insun Hwang (Samsung Electronics Co.,Ltd., Korea)

Cha Yeon Kim (ST&I, Korea)Nae Sung Lee (Sejong Univ. Korea)Jae Ho Lee (LG Display Co., Ltd., Korea)Hidenori Mimura (Shizuoka Univ., Japan)Masayuki Nakamoto (Shizuoka Univ. Japan)Yoon-Ho Song (ETRI, Korea)

[PDP]Chair Hiroshi Kajiyama (Hiroshima Univ., Japan)Co-chair Ho-Jun Lee (Pusan Nat'l Univ., Korea)Secretary Dong Cheol Jeong (Hoseo Univ., Korea)

Joong Kyun Kim (Seoul Nat'l Univ. of Tech. Korea)Hae June Lee (Puasn Nat'l Univ., Korea)Bhum Jae Shin (Sejong Univ., Korea)

Member Kyung Cheol Choi (KAIST, Korea)Yong-Seog Kim (Hongik Univ., Korea)Sung-O Kim (Clemson Univ., USA)Momoji Kubo (Tohoku Univ., Japan)Woong-Kee Min (LG Electronics Co., Ltd., Korea)Akira Miyamoto (Tohoku Univ., Japan)Cheol-Hee Moon (Hoseo Univ., Korea)Heung-Sik Tae (Kyungpook Nat'l Univ., Korea)

Program Committee

251October 11-15, 2010

[OLED]Chair Julie Brown (UDC, USA)Co-chair Chang Hee Lee (Seoul Nat'l Univ., Korea)Secretary Jang Hyuk Kwon (Kyung Hee Univ., Korea)Member Chihaya Adachi (Kyushu Univ., Japan)

Yong Cao (South China Univ. of Technology., China)Byung Doo Chin (Dankook Univ., Korea)Antoine Kahn (Princeton Univ., USA)Hye Dong Kim (Samsung Mobile Display CO., Ltd., Korea)Woo Young Kim (Hoseo Univ., Korea)Young Kwan Kim (Hongik Univ., Korea)Youngkyoo Kim (Kyungpook Nat'l Univ., Korea)Jun Yeob Lee (Dankook Univ., Korea)Jeong-Ik Lee (ETRI, Korea)Dae Gyu Moon (Soonchunhyang Univ., Korea)Jongwook Park (The Catholic Univ. of Korea, Korea)Yongsup Park (Kyung Hee Univ., Korea)Franky So (Univ. of Florida, USA)Mike Weaver (UDC, USA)Chung-Chih Wu (Nat'l Taiwan Univ., Taiwan)Joong Hwan Yang (LG Display Co., Ltd., Korea)

[Flexible Displays / Electronic Paper]Chair Michael Hack (UDC, USA)Co-chair Chung Kun Song (Dong-A Univ., Korea)Secretary Bonwon Koo (Samsung Advanced Inst. of Tech., Korea)

Jae Bon Koo (ETRI, Korea)Yong-Young Noh (Hanbat Nat'l Univ., Korea)Sungkyu Park (Chonbuk Nat'l Univ., Korea)

Member Antonio Facchetti (Northwestern Univ., USA)Jeong-In Han (KETI, Korea)Yongtaek Hong (Seoul Nat'l Univ., Korea)Bo Sung Kim (Samsung Electronic Co., LTd., Korea)Byung Uk Kim (Dongjin Semichem, Korea)Chang-Dong Kim (LG Display Co., Ltd., Korea)Insun Kim (i-components, Korea)Soon-Ki Kwon (Gyeongsang Nat'l Univ., Korea)Yeon Gon Mo (Samsung Mobile Display CO., Ltd., Korea)Beng Ong (ASTAR, Sinapore)Takao Someya (Univ. of Tokyo, Japan)

Program Committee

252

Jung Keun Yang (Sktelecom, Korea)Mihye Yi (KRICT, Korea)

[Phosphors for Display and Lighting]Chair Ru Shi Liu (Nat'l Taiwan Univ., Taiwan)Co-chair Duk Young Jeon (KAIST, Korea)Secretary Heesun Yang (Hongik Univ., Korea)Member Young Rak Do (Kookmin Univ., Korea)

Seong-Hyeon Hong (Seoul Nat'l Univ., Korea)Lin Jun (Changchun Inst. of Applied Chemistry , China)Ha-Kyun Jung (KRICT, Korea)Masato Kakihana (Tohoku Univ., Japan)Ji Sik Kim (Kyungpook Nat'l Univ., Korea)Chang Hae Kim (KRICT, Korea)Youhyuk Kim (Dankook Univ., Korea)Kee-Sun Sohn (Sunchon Nat’l Univ., Korea)Kenji Toda (Niigata Univ., Japan)Rong-Jun Xie (Nat'l Inst. for Materials Science, Japan)Chao-Nan Xu (AIST, Japan)Dae-Ho Yoon (Sungkyunkwan Univ., Korea)Chulsoo Yoon (Samsung LED Co., Ltd., Korea)

[Display Eelctronics, Systems and Applications]Chair Reiji Hattori (Kyushu Univ., Japan)Co-chair Jaehee You (Hongik Univ., Korea)Secretary Seung-Woo Lee (Kyung Hee Univ., Korea)Member Hideki Asada (NEC LCD Technologies, Ltd., Japan)

Byong-Deok Choi (Hanyang Univ., Korea)Yi-Pai Huang (Nat'l Chiao Tung Univ., Taiwan)Ju Young Jeong (Univ. of Suwon, Korea)Choon-Woo Kim (Inha Univ., Korea)Jongsun Kim (Hongik Univ., Korea)Horng-Show Koo (Ming-Hsin Univ. of Science and Tech., Taiwan)Youngsun Na (LG Electronics Co., Ltd., Korea)Yoo-Chang Sung (Samsung Electronics Co., Ltd., Korea)Changsik Yoo (Hanyang Univ., Korea)

Program Committee

253October 11-15, 2010

[3D Displays]Chair Sumio Yano (NICT, Japan)Co-chair Kuo-Chung Huang (ITRI, Taiwan)

Min-Chul Park (KIST, Korea)Secretary Jae-Hyeung Park (Chungbuk Nat'l Univ., Korea)Member Hyungki Hong (LG Display Co., Ltd., Korea)

Namho Hur (ETRI, Korea)Dae-Sik Kim (Samsung Electronics Co.,Ltd., Korea)Nam Kim (Chungbuk Nat'l Univ., Korea)Seung-Cheol Kim (Kwangwoon Univ.,Korea)Sung Kyu Kim (KIST, Korea)Bongho Lee (ETRI, Korea)Byoungho Lee (Seoul Nat'l Univ., Korea)Jongseo Lee (Samsung Electronics Co., Ltd., Korea)Osamu Matoba (Kobe Univ., Japan)Sung-Wook Min (Kyung Hee Univ., Korea)Uehara Shin-ichi (NEC, Japan)

[Display Materials and Components]Chair Yi-Jen Chan (ITRI, Taiwan)Co-chair Hongdoo Kim (Kyung Hee Univ., Korea)Secretary Han-Ki Kim (Kyung Hee Univ., Korea)Member Sanghun Jeon (SAIT, Korea)

Jae-Wook Kang (KIMS, Korea)Jihoon Kim (KICET, Korea)Youhyuk Kim (Dankook Univ., Korea)Kazuhiro Kudo (Chiba Univ., Japan)Sung-Nam Lee (Koea Polytechnic Univ., Korea)Sang-hyon Paek (Kyung Hee Univ., Korea)Jin-Seong Park (Dankook Univ., Korea)Jae-Sang Ro (Hongik Univ., Korea)

[Display Manufacturing / Equipments]Chair Chung-Chih Wu (Nat'l Taiwan Univ., Taiwan)Co-chair HeeHwan Choe (Korea Aerospace Univ., Korea)Secretary Jong Sun Lim (KRICT, Korea)Member Heeyeop Chae (Sungkyunkwan Univ., Korea)

Young Seok Choi (LG Display Co., Ltd., Korea)Seung-Jin Han (Doosan Mecatec Co., Ltd., Korea)Chang-Oh Jeong (Samsung Electronics Co., Ltd., Korea)

Program Committee

254

Sung-Kee Kang (Samsung Mobile Display Co., Ltd., Korea)Dongsoo Kim (KIMM , Korea)Jehun Lee (Samsung Electronics Co., Ltd., Korea)Seong Eui Lee (Korea Polytechnic Univ., Korea)Jin Koog Shin (Korea Printed Electronics Center, Korea)Hoe Sup Soh (Kookmin Univ., Korea)Heejung Yang (LG Display Co., Ltd., Korea)

[Mobile Display and Touch Panel]Chair Zhenqiang Ma (Univ. of Wisconsin- Madison, USA)Co-chair Byeong-Kwon Ju (Korea Univ., Korea)Secretary Ga-Won Lee (Chungnam Nat'l Univ., Korea)Member Yoon Soo Han (DGIST , Korea)

Won-gun Jang (KOPTI, Korea)Cheol-Se Kim (LG Display Co., Ltd., Korea)Sang Jik Kwon (Kyoungwon Univ., Korea)Jeong-Bong Lee (Univ. of Texas at Dallas, USA)S.-T. Lee (City Univ. of Hong Kong, Hong Kong)Kyunghwan Oh (Yonsei Univ., Korea)Byoungchoo Park (Kwangwoon Univ., Korea)Wounjhang Park (Univ. of Colorado, USA) In-Kyu You (ETRI, Korea)Jae-Woong Yu (Kyung Hee Univ., Korea)Nan Ei Yu (GIST, Korea)

[Color / Human Factor / Display Measurement]Chair Yeong Ho Ha (Kyungpook Nat'l Univ., Korea)Co-chair Seung Ok Park (Daejin Univ., Korea)Secretary Youn Jin Kim (Samsung Electronics Co., Ltd., Korea)

Youngshin Kwak (Ulsan Nat'l Inst. of Science and Tech., Korea)Seungbae Lee (Samsung Mobile Display Co., Ltd., Korea)

Member Chun-Wu Kim (Inha Univ., Korea)Hong Suk Kim (Daejin Univ., Korea)Myoung Young Lee (LG Electronics Co.,Ltd., Korea)Du-Sik Park (Samsung Electronics Co.,Ltd., Korea)Yung Kyung Park (Samsung Electronics Co., Ltd., Korea)Jae Chul Shin (KIPO, Korea)Pei-Li Sun (Nat'l Taiwan Univ. of Science and Technology, Taiwan)Hirohisa Yaguchi (Chiba Univ., Japan)

Program Committee

255October 11-15, 2010

Program Committee

[Photovoltaics]Chair Shuzi Hayase (Kyushu Inst. of Tech., Japan)Co-chair Junsin Yi (Sungkyunkwan Univ., Korea)Secretary Jae Hyeong Lee (Kunsan Nat'l Univ., Korea)

Donggun Lim (Chungju Nat’l Univ., Korea)Member Ruud E. I. Schropp (Utrecht Univ., Netherlands)

Donghwan Kim (Korea Univ., Korea)M. Konagai (TokyoTech, Japan)Jeong Chul Lee (KIER, Korea) Heon-Min Lee (LG Electronics Co.,Ltd., Korea)Hae-Seok Lee (Shinsung Holdings Co., Ltd., Korea)Hisun Pak (LG Innotek, Ltd, Korea)A. Takano (Fuji Electric Holdings Co., Ltd., Japan)Loucas Tsakalakos (General Electric, USA)Jin-Su Yoo (KIER, Korea) Jae Ho Yun (KIER, Korea)

256

Invited Papers

1-1 Effects of Interfacial Processes of Gate Dielectric on Electrical Properties and Reliability of Bottom-Gate ZnO TFTsM. Furuta, T. Hiramatsu, T. Matsuda, T. Hirao (Kochi Univ. of Tech., Japan), and M. Kimura (Ryukoku Univ., Japan)

1-3 Scaling Behavior of Self-Aligned Zinc Oxide Thin-Film TransistorZ. Ye and M. Wong (The Hong Kong Univ. of Science & Tech., Hong Kong)

2-1 Recent Developments in PEDOT/PSS for Transparent Flexible ElectrodesF. Louwet, D. Bollen, and B. Muys (Agfa-Gevaert NV, Belgium)

2-2 Progress on Direct Roll-to-Roll Manufacturing of Display Backplanes onto Plastic Substrates Using Self-Aligned Imprint Lithography (SAIL)H.-J. Kim, M. Almanza-Workman, S. Braymen, R. Garcia, J. Hauschildt,K. Junge, O. Kwon, D. Larson, D. Stieler, F. Jeffrey (Phicot Inc., USA) R. Cobene, R. Elder, E. Holland, W. Jackson, M. Jam, A. Jeans, H. Luo, J. Maltabes, P. Mei, C. Perlov, M. Smith, and C. Taussig (Hewlett Packard Co.,USA)

3-1 Maskless MIcro-Multidomain PhotoalignmentH. Yokoyama, C. Culbreath, and N. Glazar (Kent State Univ., Japan)

3-2 Liquid Crystal Polar State and Fast SwitchingL. Komitov (Univ. of Gothenburg, Sweden)

4-1 Combi-Chem Approach to Natride Phopshors for Use in LEDsK.-S. Sohn, W. B. Park, S. P. Singh, and J. W. Park (Sunchon Nat’l Univ., Korea)

4-2 Technologies for Precision Phosphor Coatings on LEDsS. E. Chung, J. Jang, S. Han, Y. J. Choi, and S. Kwon (Seoul Nat’l Univ., Korea)

5-1 Hyperrealistic Head-Up-Display for Automotive ApplicationH. Okumura, T. Sasaki, A. hotta, A. Moriya, N. Okada, and O. Nagahara (Toshiba Corp., Japan)

5-2 Implementation of Image Enhancement Algorithm with Less Computational Complexity for Real-Time ProcessingB.-H. Hwang, J.-H. Yun, and M.-R. Choi (Hanyang Univ., Korea)

6-1 Tandem and Hybrid Dye-Sensitized Solar Cells and Materials for ThemS. Hayase (Kyushu Inst. of Tech., Japan)

257October 11-15, 2010

Invited Papers

7-1 Single-Grain Si TFTs with High Performance Surpassing SOI-TFTsR. Ishihara, T. Chen, and K. Beenakker (Delft Univ. of Tech., Netherlands)

8-1 Organic Nonvolatile Memory Sheet for Large-area, Flexible, Intelligent Sensor ArraysT. Sekitani, T. Someya (The Univ. of Tokyo, Japan), U. Zschieschang, and H. Klauk (Max Planck Inst. for Solid State Research, Germany)

9-1 Ultrafast Switching Liquid Crystals for Electro-Optic

LasersH. J. Coles, S. M. Morris, F. Castles, P. J. W Hands, and T. D. Wilkinson (Univ. of Cambridge, UK)

9-2 Hole Induced Vertical Alignment LC Mode for High Transmittance Mobile DisplaysY.-K. Jang, S. J. Lee, Jae Y. Lee, Y. Li, J. H. Hwang, S. W. Kim, C. W. Shim, J. Y. Seo, N. J. Kim, Y. J. Ahn, N. H. Kim, S. H. Ahn, S. R. Lee, D. H. Park, and C. W. Kim (Samsung Mobile Display, Co., Ltd., Korea)

10-1 Recent Development of Display Phosphors and their ApplicationsK. Ohmi (Tottori Univ., Japan)

10-2 Synthesis of Green- and Red-Emitting Nanophosphors for Application to Transparent Plasma Display PanelsW.-S. Song, H.-N. Choi, Y.-S. Kim, and H. Yang (Hongik Univ., Korea)

10-3 Recent Research and Development of Vacuum-Ultraviolet PhosphorsY. Wang, W. Liang, and H. Zhang (Lanzhou Univ., China)

All Sputtered CdS/CdTe Thin Film Solar CellsJ. Lee, H. Ryu, S. Kim, and S. Lee (Kunsan Nat’l Univ., Korea)

12-3 Technical Development, Industrial Infrastructure and Supply Chain of CIS/CIGS Photovoltaic CellsH. S. Koo and M. Chen (Minghsin Univ. of Science and Tech., Taiwan)

13-1 Fabrication of High-Performance Organic Thin-Film Transistors and Their Application to Flexible DisplaysY. Fujisaki, T. Takei, Y. Nakajima, H. Sato, M. Suzuki, H. Fukagawa, G. Motomura, T. Shimizu, M. Nakata, T. Yamamoto, H. Fujikake, and S. Tokito (NHK Science and Tech. Research Lab., Japan)

258

13-4 A Large-Area Printed Organic Transistor Active Matrix for Skin-Like InterfacesT. Sekitani and T. Someya (The Univ. of Tokyo, Japan)

14-1 Monolayer Rotating Ball Electronic Paper DisplayH.-S. Lee (Samsung Electro-Mechanics Co., Ltd., Korea)

15-1 Bistable LCD as Electronic PaperC. Y. Lee, M. C. Tseng, and H. S. Kwok (The Hong Kong Univ. of Science and Tech., Hong Kong)

15-2 Techniques and Challenges for Reflective Display Applications - LCDs vs. E-PaperK. Blankenbach (Pforzheim Univ., Germany)

18-1 Novel Transport Materials for High Performance Fluorescent and Phosphorescent OLEDsE. Böhm, C. Pflumm, J. Kaiser, J. Kröber, F. Voges, H. Heil, A. Büsing, A. Parham, R. Fortte, T. Mujica-Fernaud, R. Anemian, and S. Leu (Merck KGaA, Germany)

18-2 Non-doped Solution-Processed Molecular Emitters for OLEDsX.-H. Zhu (South China Univ. of Tech., China)

18-3 New Blue Emitter and White OLED Device in Solution Process and Vacuum ProcessY. Park, B.-j. Kim, and J. Park (The Catholic Univ. of Korea, Korea)

20-1 The Technical Challenge of Flexible Display on New Business ApplicationC.-D. Kim, S.-Y. Yoon, J.-S. Yoo, and Y.-K. Hwang (LG Display Co., Ltd., Korea)

20-2 Thin and Light Weight Flexible Electronic Paper Display using QR-LPD™ TechnologyR. Hattori (Kyushu Univ., Japan), R. Sakurai, N. Nihei, and Y. Masuda (Bridgestone Corp., Japan)

20-4 Unconventional Materials and Processes for Printed OptoelectronicsA. Facchetti (Northwestern Univ., USA)

21-1 Development of Liquid Crystal Mixtures for AM-LCDT. Aono (Chisso Petrochemical Corp., Japan) and Y. Gotoh (Chisso Corp., Japan)

21-2 Patterned Retarder Films Using Reactive Mesogen TechnologyR. Harding, H.-J. Yoon (Merck Advanced Technologies Ltd., Korea), O. Parri, I. Gardiner, G. Smith, J. Sargent, and K. Skjonnemand (Merck Chemicals Ltd., UK)

Invited Papers

259October 11-15, 2010

22-1 Design of Phosphors for White Light LED by Using Energy Transfer PrincipleT.-M. Chen, C.-H. Huang, and W.-J. Yang (Nat’l Chiao Tung Univ., Taiwan)

22-2 Nanostructure Materials for FED and White LED ApplicationZ. Sun,T. Feng, Z. Zhang, H. Li, L. Pan, Y. Chen, X. Chen, H. Ding, X. Wang, and T. Lu (East China Normal Univ., China)

22-3 Synthesis of High Performance Phosphors by Advanced Solution MethodsM. Kakihana (Tohoku Univ., Japan) and V. Petrykin (J. Heyrovsky Inst. of Physical Chemistry, Czech Republic)

23-1 Visual Fatigue from Stereoscopic VideoK. Sohn (Yonsei Univ., Korea)

23-2 Analysis on the Motion Blur of Stereoscopic 3D Images with Lateral Movements and Its Effect on Accommodation-Convergence MismatchH.-J. Choi (Sejong Univ., Korea)

24-1 Progress in Solution Processible Phosphorescent Organic Light Emitting Diodes (PHOLEDs)K. O. Cheon, S. Xia, J. Brooks, S. Mohan, M. Rothman, P. Hett, R. Kwong, M. Inbasekaran, and J. J. Brown (Universal Display Corp., USA)

26-1 Flexible Electronic Paper Driven by Transparent Amorphous Oxide SemiconductorsM. Ito, C. Miyazaki, N. Ikeda, K. Murata, Y. Harada, and M. Ishizaki (Toppan Printing Co., Ltd., Japan)

27-1 The Progress of Rubbing and Non-Rubbing TechniquesM. Kimura, Y. Kuramoto, Y. Inoue, and H. Sato (Nagaoka Univ. of Tech., Japan)

27-4 Fast Switching Surface-Polymer-Assisted Vertically Aligned Nematic DisplaysJ.-Y. Hwang, V. Borshch, and L.-C. Chien (Kent State Univ., USA)

28-1 Investigation of Phosphors for Light-Emitting Diodes (LEDs) by Combinatorial Chemistry MethodR-S. Liu, L. Chen (Nat’l Taiwan Univ., Taiwan), and T.-S. Chan (Nat’l Synchrotron Radiation Research Center, Taiwan)

29-1 Passive Image Sensing and Processing for Real-time Depth EstimationH. Ikeoka and T. Hamamoto (Tokyo Univ., Japan)

29-2 Fast View Synthesis for 3D DisplayJ. Choi, J.-I. Park (Hanyang Univ., Korea), and H.-C. Shin (ETRI, Korea)

Invited Papers

260

30-1 White Phopshorescent OLED Lighting: A Green TechnologyM. S. Weaver, P. A. Levermore, V. Adamovich, K. Rajan, C. Lin, G. Kottas, S. Xia, R. Ma, R. C. Kwong, M. Hack, and J. J. Brown (Universal Display Corp.,USA)

30-2 High Efficient White Emitting Devices based on Microcavity Blue Phosphorescent OLEDs with Down-Conversion PhosphorsJ. Lee and F. So (Univ. of Florida, USA)

31-1 How We Can Improve Characteristics and Stability of a-In-Ga-Zn-O Based TFTsK. Nomura, T. Kamiya, and H. Hosono (Tokyo Inst. of Tech., Japan)

32-1 High Mobility, Low Temperature Processed P-type Polymer Semiconductors for Printed Organic Thin Film TransistorsY. Li (Univ. of Waterloo, Canada)

32-2 Low-Voltage Organic Transistors and Circuits for Flexible DisplaysH. Klauk (Max Planck Inst. for Solid State Research, Germany)

33-1 Liquid Crystalline Blue Phases for Electro-optical DevicesH. Kikuchi, S. Shibayama, H. Choi, H. Higuchi (Kyushu Univ., Japan), Y. Haseba, and S.-I. Yamamoto (Chisso Petrochemical Co., Ltd., Japan)

33-2 Novel LC Materials for 3D ApplicationsM. Wittek, H. Hirschmann, B. Rieger, K. Tarumi, V. Reiffenrath, D. Pauluth (Merck KGaA, Germany), and S.-E. Lee (Merck Advanced Technologies, Korea)

34-1 A Flicker-Reduced Memory Reduction for Volume-Zone LCD OverdriveH. Sasaki (Toshiba Corp., Japan), T. Ishikawa, Y. Ishikawa, K. Ichikawa, and N. Saitou (Toshiba Microlecetronics Corp., Japan)

34-2 Technologies Related to Field Sequential Color LCDsK. Sekiya (Tohoku Univ., Japan)

34-4 LED Backlight Driving Circuits and Dimming MethodO.-K. Kwon, Y.-H. Jung, Y.-H. Lee, H.-S. Cho, and K.-S. Nam (Hanyang Univ., Korea)

35-1 Development of Performance Characteristics for 3D DisplaysS.-I. Uehara, T. Koike, C. Kato, M. Uchidoi, T. Horikoshi, G. Hamagishi, Y. Hisatake, and H. Ujike (Japanese Ergonomics Nat’l Committee, Japan)

Invited Papers

261October 11-15, 2010

35-2 Geometric Projective Model of Autostereoscopic 3D DisplayV. V. Saveljev (Hanyang Univ., Korea)

36-1 Optimization of Charge Carrier Balance in Blue OLEDsU. Denker, C. Rothe, and J. Birnstock (Novaled AG, Germany)

37-1 Device Characterization Starting from Quasi-Static Ca-pacitance-Voltage Characteristics for Thin-Film Transis-tors – Low-and High-Temperature Poly-Si, Amorphous In-Ga-Zn-O, ZnO, Polymer -M. Kimura (Ryukoku Univ., Japan)

38-1 Address Discharge Characteristics of High Luminous

K.-W. Whang, H.-W. Cheong, J.-C. Jung, T.-H. Lee, and O. Kwon (Seoul Nat’l Univ., Korea)

38-2 Thomson Scattering Diagnostics of Micro-plasmas for Plasma Display PanelK. Uchino, Y. Sonoda, and K. Tomita (Kyushu Univ., Japan)

39-1 Contributions of Merck as Material Manufacturer to Green Displays and ElectronicsW. Becker (Merck KGaA, Germany)

39-2 Technology of Diffractive Waveplates for Polarizer-Free DisplaysS. R. Nersisyan, N. V. Tabiryan (US Army Natick Soldier RD&E Center, USA), B. R. Kimball, and D. M. Steeves (Beam Engineering for Advanced Measurements Co., USA)

40-1 Intra-Panel Interfaces for Chip-On-Glass TFT-LCD ApplicationsM. Lee, J.-Y. Lee, D. Baek, J.-P. Lim, H.-S. Pae, W. Yu, Y.-M. Choi, Y.-H. Lee, S. I. Lee, and Y.-K. Choi (Samsung Electronics Co., Ltd., Korea)

41-1 Optimal Design of Lens Array for Wide-Viewing Angle Multi-View Lenticular 3D DisplaysH. Kim (Korea Univ., Korea), and J. Hahn (Duke Univ., USA)

42-1 Self-Organized Versatile Anode for Flexible Organic DevicesS.-H. Woo, K.-G. Lim, T.-H. Han, M.-R. Choi, and T.-W. Lee (POSTECH, Korea)

42-3 Localized Surface Plasmon Mediated Luminescent Enhancement of Polymer LEDs using Nanocomposite Hole-Injection LayerP.-J. Cheng, H.-M. Shih, J.-A. Cheng, C.-H. Tien, and C.-S. Hsu (Nat’l Chiao Tung Univ., Taiwan)

Invited Papers

262

TechnologiesY.-G. Kang, S.-K. Kwon, G.-S. Kim, J.-H. Kim, J.-H. Lee, H.-S. Shim, J.-S. Kwon, S.-Y. Park, C.-H. Choi, K.-Y. Kwon, T.-Y. Kim, D.-H. Yoon, H.-G. Jin, S.-B. Jung, Y.-T. Ryu, J.-K. Choi, and K.-H. Park (LG Electronics Inc., Korea)

44-2 Discharge Characteristics of High PDPs Manufactured by using “All-In-Vacuum” ProcessT. Yano, K. Uchida (ULVAC, Inc., Japan), K. Suesada, S. Miyamoto, T. Shinoda, and H. Kajiyama (Hiroshima Univ., Japan)

44-3 Current Issue of 3D Technology and Solution Subject for 3D PDPS. Moon, D. Kim, J. Lee, J. Ra, M. Jeon, and K. Choi (LG Electronics Inc., Korea)

45-1 Transparent Electronic Materials Fabricated by Ionized Physical Vapor Deposition MethodW.-S. Cheong, M.-H. Lee, J.-Y. Bak, S. M. Chung (ETRI, Korea), S.-J. You, J.-H. Kim (KRISS, Korea), and Y.-S. Kim (Daeki Hi-Tech Co., Ltd., Korea)

45-2 Designing Novel Oxide Semiconductors for Next Generation Active Matrix BackplanesJ.-S. Park (Dankook Univ., Korea), J. Lee (Samsung Electronics Co., Ltd., Korea), and C. J. Kim (SAIT, Korea)

45-3 Materials and Components for Flexible AMOLED DisplaysD. Jin, S. An, H. Kim, Y. Kim, H. Koo, T. Kim, Y. Kim, H. Min, H. Chung, and S. S. Kim (Samsung Mobile Display Co., Ltd., Korea)

46-1 Long-Life Carbon Nanotube Cathode with Various Surface Treatments for Backlight Unit and LightingM. Takai, T. Takikawa, H. Oki, K. Murakami, S. Abo, and F. Wakaya (Osaka Univ., Japan)

47-1 Measurement Methods of Autostereoscopic 3D DisplayT. Koike (Hitachi, Ltd., Japan)

47-2 Grey Level Analysis of Different Types of 3D DisplaysP. Boher, T. Leroux, and V. C. Patton (ELDIM, France)

47-3 Measurement of Gray-to-Gray Crosstalk in Stereoscopic DisplaysS. Shestak (Samsung Electronics Co., Ltd., Korea)

48-1 A Novel Anode Structure based on a Conductive Low-Index Layer for Outcoupling Enhancement in OLEDsS. Yoo, T.-W. Koh, J.-M. Choi (KAIST, Korea), and S. Lee (Samsung Mobile Display Co., Ltd., Korea)

Invited Papers

263October 11-15, 2010

48-2 Enhanced Outcoupling Efficiency of Organic Light Emitting Diodes by Spontaneously Formed BucklesW. H. Koo, F. Araoka, K. Ishikawa, H. Takezoe (Tokyo Inst. of Tech., Japan), S. M. Jeong, S. Nishimura, and T. Toyooka (Nippon Oil Corp., Japan)

49-1 Review and Future Directions of the Measurement Standard from the International Committee for Display MetrologyE. F. Kelley (KELTEK LLC, USA)

50-1 Air-Stable CaMgO Protective Layer for AC-PDPY. Motoyama, D. Kato, and M. Seki (NHK Science and Technical Research Lab., Japan)

50-2 Excited Xe Atom Density in the 1s5 Metastable State and Energy Band Structure of MgO with Functional Layer in High Efficiency Alternating Current Plasma Display PanelE. H. Choi, Y. H. Kim, Y. J. Hong, Y. G. Han, J. H. Choi, K. A. Lee, G. S. Cho, D.-Y. Kim, and H. S. Uhm (Kwangwoon Univ., Korea)

51-1 Printed Electronics - Inkjet Printing of Electronic Materials and Their Device ApplicationsJ. Kim, H. Kim, Y. J. Yoon, and J. Kim (KICET, Korea)

52-1 Light Sources Using Field Emitter TechnologiesH. Mimura, Y. Neo, T. Aoki (Shizuoka Univ., Japan), and T. Matsumoto (Stanley Electric Corp., Japan)

52-3 High Luminance and High Luminous Efficacy White Color Flat Field Emission Lamps with Newly Developed Low Acceleration Voltage PhosphorsM. Nakamoto, J. Moon, and H. Hiraki (Shizuoka Univ., Japan)

53-1 Recent Research about Projection-Type Three-Dimensional DisplayS.-W. Min (Kyung Hee Univ., Korea)

54-1 15-inch RGBW OLED TV Using White OLED and 15-inch RGB Using Fine Metal Mask TechnologyC.-W. Han, H.-K. Kim, J.-M. Lee, J.-K. Shin, S.-H. Pieh, C.-O. Kim, Y.-M. Choi, M.-Y. Han, H.-S. Pang, J.-J. Kim, T.-S. Yoo, H.-S. Choi, H.-W. Kim, S.-J. Hwang, M.-S. Kim, D.-S. Yang, D.-H. Kim, S.-J. Bae, and B.-C. Ahn (LG Display Co., Ltd., Korea)

54-2 Next Generation TFT Technology for AMOLEDH.-H. Hsieh, H.-H. Lu, C.-Y. Chang, T.-T. Tsai, J.-Y. Huang, H.-C. Ting, S.-F. Hsu, Y.-C. Wu, C.-S. Chuang, C.-Y. Chen, L.-H. Chang, and Y. Lin (AU Optronics Corp., Taiwan)

Invited Papers

264

54-3 Power Efficient All-Phosphorescent AMOLED with Novel Four Sub-Pixel ArchitectureW.-Y. So, P. A. Levermore, V. I. Adamovich, K. Rajan, M. S. Weaver, R. Ma, M. Hack, J. J. Brown (Universal Display Corp., USA), M. H. Kang, H. J. Kim, J. H. Hur (Silicon Display Tech., Korea), J. W. Choi, J. I. Kim, and J. Jang (Kyung Hee Univ., Korea)

55-1 Colorimetric Problems of LEDs used as LCD Display Back-LightsJ. Schandar (Univ. of Pannonia, Hungary), S.-Y. Choi, D.-S. Park, H.-Y. Lee, and C.-Y. Kim (SAIT, Korea)

56-1 Solid State Lasers and Optics for Pulsed and Cw Green Wavelength thin Film a-Si CrystallizationH.-J. Kahlert, B. Burghardt, H. Schmidt, and M. Timm (INNOVAVENT GMBH, Germany)

56-2 Matching Technology for R2R Printed ElectronicsC. Lee, H. Kang, and K. Shin (Konkuk Univ., Korea)

57-1 OLED Microdisplays with Advanced Features Enabling New ApplicationsU. Vogel, D. Kreye, B. Richter, K. Fehse, T. Pres-berger, R. Herold, and M. Scholles (Fraunhofer IPMS, Germany)

57-2 Compact Green Light Sources for Micro Projector: Current Status and ProspectN. E. Yu, J. W. Choi, and D. -K. Ko (GIST, Korea)

57-3 Multi Finger and Stylus Recognizing Touch ScreenH.-W. Jang, J.-S. Ku, S.-.S Ahn, C.-H. Lee, J.-Y. Kim, T.-H. Jung, and K.-Y. Han (Samsung Mobile Display Co., Ltd., Korea)

58-1 Thermal Assessment and Luminous Efficiency Requirement for Edge-Lit LED BacklightsJ. K. Park, J. W. Kwon, and M. S. Choi (Samsung LED Co., Ltd., Korea)

58-3 LEDs for Lighting ; Opportunities and ChallengesT. Oh (LG Innotek Co., Ltd., Korea)

59-1 Digital Holography and Wavefront 3D Display by Liquid-Crystal Spatial Light ModulatorO. Matoba (Kobe Univ., Japan) and Y. Awatsuji (Kyoto Inst. of Tech., Japan)

60-1 OLED Technology Scalable for Television: Solution Process Delivers Printed Lifetime

(DuPont Displays, Inc., USA)

Invited Papers

265October 11-15, 2010

60-2 Application of Metal Peel-off Method for The Fabrication of Flexible Organic Light Emitting DiodesS. Y. Kim (Chung-Ang Univ., Korea), and J.-L. Lee (POSTECH, Korea)

61-1 High Dynamic Range ImagingJ. Duan (Southwestern Univ. of Finance and Economics, China)

62-1 Development of High Performance and Air-Stable Organic Transistor Backplane Technology by Printing MethodsY. U. Lee, D. Bird, T. Pease, M. Cooke, K. McCall, and S. Ogier (PETEC, UK)

63-1 Single-Crystal Silicon Nanomembrane Transfer Techniques and Their Application Toward Flexible Microwave SystemsJ.-H. Seo, H.-C. Yuan, L. Sun, and Z. Ma (Univ. of Wisconsin-Madison, USA)

PanelT. Tsai (Cheng-Mei Instrument Tech. Co., Ltd., Taiwan), M. Chen, and H.-S. Koo (Ming-Hsin Univ., Taiwan)

64-1 Low-Cost Fabrication of Large-Area Polymer OLED LightingsD.-H. Lee, H.-C. Shin, H.Chae, and S. M. Cho (Sungkyunkwan Univ., Korea)

64-3 Hybrid White Organic Light Emitting Diode for Display ApplicationsJ.-I. Lee, J. Lee, D.-H. Cho, J.-H. Han, J.-W. Shin, and H. Y. Chu(ETRI, Korea)

65-1 High-Speed addressing with Priming Cell Structures in AC-PDPsT. Murakoso, H. Tachibana, F. Kusama, K. Sumida, and R. Murai (Panasonic Plasma Display Co., Ltd., Japan)

Invited Papers

266

Awarded Papers

◈ Awards of Minister of Education, Science and Technology[Excellence Awards]25-2 Negative Bias Enhanced Photo Instability of Top gate

IGZO TFT ............................................................................62S.-H.Ko Park, M. Ryu, K. Kim, S. Yang, C.-S. Hwang, C. Byun, S. M. Yoon, and H. Oh(ETRI, Korea)

27-3 Vertical Alignment of Liquid Crystals by Ordering Effect of Self-Assembled Monolayers on the Ion-beam-Irradiated Anisotropic Surface .......................................................... 67J.-S. Park, K.-Y. Seok, H.-R. Kim (Kyungpook Nat’l Univ., Korea), S.-W. Hwang, J.-C. Kim, T.-H. Yoon (Pusan Nat’l Univ., Korea), and J.-H. Kim (Hanyang Univ., Korea)

32-3 Novel Flexible Reflective Color Media with Electronic Inks ..................................................................................... 77J.-S. Yeo, J. Mabeck, G. Combs, V. Korthuis, R. Hoffman, B. Benson, and T. Koch(Hewlett-Packard Co., USA), Z.-L. Zhou, D. Henze(Hewlett-Packard Lab., USA)

◈ Merck Awards4-3 Computational Study on Cation Effects on Emission Wavelength

of Ca1-xMxAlSiN3:Eu2+ (M=Li,Na,Mg,Sr,Ba,Y,La) .............. 19H. Onuma, I. Yamashita, R. Nagumo, R. Miura, A. Suzuki, H. Tsuboi, N. Hatakeyama, A. Endou, H. Takaba, M. Kubo, and A. Miyamoto (Tohoku Univ., Japan)

41-2 Super Multi-View Windshield Display for Driving Assistance.......................................................................... 94Y. Urano, Y. Takaki (Tokyo Univ. of Agriculture and Tech., Japan), S. Kashiwada, H. Ando, and K. Nakamura (Denso Corp., Japan)

64-2 Large Area, Planar Backlight Unit by Field Emission Technology ...................................................................... 196Y. Ye, T. Guo, J. Lin, Z. Lin, Y. Zhang, and L. Hu (Fuzhou Univ., China)

[Young Scientist Award] Fluorescent white OLEDs with a High Color Rendering

Index using a Silicon-cored Anthracene Derivative as a Blue Host ..................................................... JID Vol. 11 No.3Jeonghun Kwak, Hyunkoo Lee, Kookheon Char, Changhee Lee (Seoul National Univ.) and Yi-Yeol Lyuc (Unitech Co., Ltd.)

267October 11-15, 2010

Awarded Papers

11-1 Disturb-Free Ferroelectric Nonvolatile Memory Cell for Oxide TFT-Based Low-Power Display Panels ................ 32B. Kim, C. Byun, S. Yang, S.-W. Jung, M. Ryu, S.-H. Ko Park, C.-S. Hwang, K.-I. Cho, O.-S. Kwon, E.-S. Park, K.-H. Kim, S.-M. Yoon, (ETRI, Korea), and K. Park (Konkuk Univ., Korea)

◈ KIDS Awards (Sponsored by LG Display) [Gold Prize]58-2 Local Dimming in Edge-Type Light Emitting Diode

Backlight Units ................................................................ 186S. Lee, S. Hwang, M. Lim, H. Han (POSTECH, Korea), D. Lee, B. Kim, and S. Kang (LG Display Co., Ltd., Korea)

[Silver Prize]8-2 GReCoSS Process for Fabrication of Flexible Oxide TFT

............................................................................................. 26J. Jin, J.-H. Ko, S.-J. Seo, Y. H. Hwang, B.-S. Bae (KAIST, Korea), S.-H. Ko. Park, S. M. Yoon, M. K. Ryu, S. H. Yang, O.-S. Kwon, and E.-S. Park (ETRI, Korea)

◈ KIDS Awards (Sponsored by Samsung Electronics)[Gold Prize]17-1 A Single Clock Driven Shift Register Using P-type Low

Temperature Polycrystalline Silicon Thin Film Transistors ............................................................................................. 44K.-N. Kim, J.-S. Kang, S.-J. Ahn, O.-K. Kwon (Hanyang Univ., Korea), J. S. Lee, D. H. Lee, and C. W. Kim (Samsung Mobile Display Co., Ltd., Korea)

[Silver Prize]61-2 Estimation of Low Dynamic Range Images from a Single

Image for High Dynamic Range Imaging Based on Exposure Look-up Table ................................................ 192T.-H. Lee, and Y.-H. Ha (Kyoungpook Nat’l Univ., Korea)

268

Awarded Papers

◈ Outstanding Poster PapersP1-12 Comparative Study on Light-Induced Bias Stress

Instabilities of IGZO Thin Film Transistors with SiNx and SiOx Gate Dielectrics........................................... 103K.-H. Ji, J.-I. Kim, J. K. Jeong (Inha Univ., Korea), Y.-G. Mo (Samsung MobileDisplay Co., Ltd., Korea), S. H. Yang, and S. H. Ko Park (ETRI, Korea)

P1-22 The Effects of Active Layer Thickness in Solution- Processed HfInZnO TFTs............................................ 108W. H. Jeong, G. H. Kim, D. L. Kim, H. S. Shin, H. J. Kim (Yonsei Univ., Korea), M.-K. Ryu, K.-B. Park, J.-B. Seon, and S.-Y. Lee (SAIT, Korea)

P1-27 Single-Polarizer Liquid Crystal Display Mode using a Passive Polarization-Dependent Microlens Arrays...110J. Jeong, Y. W. Kim, D. H. Jung, J.-H. Kim, C.-J. Yu (Hanyang Univ., Korea), and J. S. Gwag (Yeungnam Univ., Korea)

P1-29 Optical Design for Reflective Dual Operation Liquid Crystal Display..............................................................111T. Kim, J. H. Lee, T.-H. Yoon, and J. C. Kim (Pusan Nat’l Univ., Korea)

05K.-H. Kim, H.-J. Jin, J. C. Kim, T.-H. Yoon (Pusan Nat'l Univ., Korea), B.-H. Cheong, H.-Y. Choi, and S. T. Shin (Samsung Electronics Co., Ltd., Korea) ..............................................112

P1-50 Spatiotemporal Behavior of Excited Xe Atom Density in the 1s5 Metastable State According to the Hoof Type Electrodes Structure in Alternating Current Plasma Display Panel......................................................................121Y. H. Kim, Y. J. Hong, Y. G. Han, G. S. Cho, and E. H. Choi (Kwangwoon Univ., Korea)

with Various Address Waveforms during Sustain Period in AC Plasma Display Panel ........................... 122S.-Y. Kim, C.-S. Park, J. H. Kim, and H.-S. Tae (Kyungpook Nat’l Univ., Korea)

P1-79 Luminescent Properties of a New Cyan-Blue Phosphor SrSi2S5:Eu2+ prepared by an Advanced Chemical Method.......................................................................... 134M. Nakamura, S. Tezuka, Y. Takatsuka, H. Kato, M. Kakihana (Tohoku Univ., Japan), and V. Petrykin (J. Heyrovsky of Inst. of Physical Chemistry, Czech Republic)

269October 11-15, 2010

Awarded Papers

P1-81 Low-Temperature Synthesis of Zn2SiO4:Mn Phosphor with High Purity and Strong Emission by a Homogeneous Precipitation Method in Combination with Novel Water-Soluble Silicon Compounds....................................... 135K. Yoshizawa, Y. Suzuki, H. Kato, and M. Kakihana (Tohoku Univ., Japan)

P1-104 Patterned Alignment of Liquid Crystalline Polymer using Nonpolar-Solvent-Induced Anisotropic Tensile Effect............................................................................. 145K.-W. Park, C.-S. Park, K.-I. Joo, G. Kwak, S.-W. Kang, and H.-R. Kim (Kyungpook Nat’l Univ., Korea)

P1-107 Rotational Viscosities of a Mixture Comprising Four Different Kinds of Liquid Crystals ............................. 146J.-S. Kim, M. Jamil, F. Ahmad, J. W. Lee, S. W. Park, Y. J. Jeon (Konkuk Univ.,Korea), J. E. Jung, and J. E. Jang (SAIT, Korea)

P1-119 Effect of DMF Modulated PEDOT:PSS Buffer Layer on P3HT:PCBM:ZnO Bulk Heterojunction Organic Solar Cells .............................................................................. 152S. H. Oh, K. M. Kim, J. Jung, A. Moujoud, and H. J. Kim (Yonsei Univ., Korea)

P2-6 Fabrication Method of Microlens Arrays using Liquid Crystalline Polymer ..................................................... 204Y. W. Kim, S. H. Lee, J. Jeong, J.-H. Kim, and C.-J. Yu (Hanyang Univ., Korea)

Liquid Crystal Film ...................................................... 204U. Cha, K.-S. Bae, J.-H. Kim, and C.-J. Yu (Hanyang Univ., Korea)

P2-14 Thermal Treatment for LED’s Luminous Intensity Improvement............................................................... 207M. O. Kim, S. J. Lee, J. Y. Song, S. S. Jung, J. M. Moon, J. W. Lee, Y. K. Hwang, and I. J. Jung (LG Display Co., Ltd., Korea)

P2-37 Solution Processible Electrophosphorescent evices with Heterostructures at Hole Transport Layer ........ 218J. K. Park, D. K. Yoon, B. D. Chin (Dankook Univ., Korea), and N. S. Kang (Korea Univ., Korea)

P2-53 Demonstration of Ring Oscillator based on Flexible Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Tran-sistors........................................................................... 225J. W. Choi, M. H. Choi, M. Mativenga, and J. Jang (Kyung Hee Univ., Korea)

270

Awarded Papers

P2-59 Full-Parallax 360 Degrees Integral Imaging Display.... 227M.-U. Erdenebat, G. Baasantseren, J.-H. Park, N. Kim, and K.-C. Kwon (Chungbuk Nat’l Univ., Korea)

P2-75 Optimum Single Slit Design Guide applied by High Performance Product .................................................. 235W.-S. Yoon, S.-K. Kim, B.-J. Cha, K.-Y. Kim, J.-W. Koh, J.-H. Rhee (Beijing BOE Display Tech. Co., Ltd., China), S.-J. Choi, and G. Hui (BOE Optoelctronics Tech. Co., Ltd., China)

P2-79 Directly Fabricated Microlenses with Easily Tuned Size and Shape by Ink-jet Printing Technology ................ 237J. Y. Kim J. Brugger (EPFL , Switzerland), L.-M. Do (ETRI, Korea), K. Pfeiffer A. Voigt, and G. Gruetzer (Micro Resist Tech. GmbH, Germany)

P2-86 Horizontal Dipping Method for Simple Fabricating Large OLEDs for Mobile Displays.............................. 241B. Park, H. G. Jeon, and K.-H. Choi (Kwangwoon Univ., Korea)

271October 11-15, 2010

Exhibitors

Booth No. Company

5001 Dongjin Semichem Co.,Ltd.5009 K. C. Tech.5017 TES Co., Ltd.5041 Senayuri Korea5043 DE&T Co., Ltd.5045 KMAC5047 ATS Engineering5049 OCI Materials5051 Rorze Systems5057 Toptec Co., Ltd.5058 Tek Korea Co.,Ltd/Toray Engineering Co., Ltd.5061 Jung Won Corporation5065 Charm Engineering Co.,Ltd.5066 ISEL Co., Ltd.5071 LMS5073 Semi Sysco Co., Ltd.5074 Zeon Coporation5081 Merck Advanced Technologies Ltd.5089 Samsung Electronics Co., Ltd.5204 Nikkei Business Publications, Inc.5205 Shenihen Flat Panel Display Industry Association5206 FineTech Japan / FilmTech Japan5207 Young Poong CMC Co., Ltd.5208 Sewooincorporation5210 Unilam Co., Ltd.5213 Tri-N. Co., Ltd.5215 Brush Bank5217 I&A Technology5218 GY Tech5219 Dongabrush5220 Econy Co., Ltd.5222 SEO5223 Opticom Co., Ltd.5225 Bega Technologies5226 Tokyo Electron Limited5227 Vitron Co., Ltd..5229 Sanayi System Co., Ltd.5230 NanoSystem Co., Ltd.5231 Sungdo Eng5232 STI5237 Cimadigitec5243 Air Products HYT Inc.

October 12 ~ 15 / KINTEX 5 Hall

272

IMID 2010 Exhibitors

Booth No. Company

5243 Air Products Korea Inc.5249 SFA Engineering Corp.5255 Samsung Corning Precision Materials5301 SP Technology Co., Ltd.5307 Napson Korea Co., Ltd.5309 Topcon Korea Corporation5316 Mirho Corp.5325 SAES Getters Korea5327 Opto Finetech Co., Ltd.5328 LeCroy Korea Ltd.5329 Focus Corporation5330 RadiantSolution5331 Samsung Institute of Calibration Technology Co., Ltd.5332 Sepoong Ind. Co., Ltd.5333 NDIS Corporation5335 TOYO Corporation5336 Delta ES Co., Ltd.5337 G&B TECH5338 Daeil Systems Co., Ltd.5339 Hogahm Technology5341 Sunic System, Ltd.5343 Telstar-Hommel Corporation5344 McScience Inc.5345 YTS Co., Ltd.5347 i-components5349 Novaled AG5351 SNU Precision Co., Ltd.5355 SHIN Corporation5357 IMS5359 AVACO Co., Ltd.5365 LIG ADP5401 Canon Semiconductor Engineering Korea Inc.5409 Chisso Korea Co., Ltd.5413 Nitto Denko5419 Osung Lst Co., Ltd.5423 JSR Micro Korea5427 Robostar5433 LG Display Co., Ltd.- New Power Plasma Co., Ltd.- Display Sectoral Council Human Resource Development- SEMES Co., Ltd.- Shinsung FA

October 12 ~ 15 / KINTEX 5 Hall

273October 11-15, 2010

275October 11-15, 2010

ORGANIZED BY - IMID program book.pdf · 2011-01-17 · ORGANIZED BY The Korean Information Display...

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