Organic emissive materials and devices for photonic communication
-
Upload
hiroyuki-suzuki -
Category
Documents
-
view
215 -
download
2
Transcript of Organic emissive materials and devices for photonic communication
POLYMERS FOR ADVANCED TECHNOLOGIES
Polym. Adv. Technol. 2004; 15: 75–80
Published online in Wiley InterScience (www.interscience.wiley.com). DOI: 10.1002/pat.443
Organic emissive materials and devices for photonic
communication
Hiroyuki Suzuki1*, Atsushi Yokoo2 and Masaya Notomi2
1NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198, Japan2NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198, Japan
Received 4 July 2003; Accepted 15 July 2003
This article describes our recent progress on the development of organic emissive materials and
devices for photonic communication applications. Luminescence properties in the infrared (IR)
region were examined for two types of organic emissive material, an organic rare earth complex
and an organic ionic dye, and their potential for use as emissive materials in photonic communica-
tion applications was discussed. The luminescence mechanism elucidated in this study suggested a
guideline for the future development of organic IR emissive materials. Novel organic emissive
devices were fabricated by combining organic emissive materials with various types of photonic
crystal structure utilizing nanotechnology. These devices utilize the advantages and unique proper-
ties of organic materials, and so signal the way towards the breakthroughs needed to realize emis-
sive devices for the photonic communication networks of the future. Copyright # 2004 John Wiley
& Sons, Ltd.
KEYWORDS: conjugated polymers; dyes/pigments; LEDs; luminescence; nanotechnology
INTRODUCTION
Organic electronics and nanotechnology are recognized as
the key areas from which future technological innovations
will arise to challenge the essential limitations of conven-
tional technologies. For instance, success in the development
of organic light-emitting diodes (LEDs) in the visible region
for display applications has demonstrated the potential of
organic materials for practical use. However, this means
that the development of organic emissive materials has so
far been focused on the visible region. Currently efforts are
being made to extend the emission wavelength of organic
materials to the infrared (IR) region in order to apply them
to photonic communication and information processing.1–7
This is because photonic communication networks are con-
structed using silica optical fibers that have two main win-
dows in the loss spectrum in the 1.3 and 1.55 mm
wavelength regions. Only a limited number of studies have
focused on organic IR emissive materials suitable for this
application. Most organic IR emissive materials reported to
date are organic complexes with trivalent rare earth ions
such as Er3þ, 2–4 Nd3þ 5,6 and Pr3þ.7 The electroluminescent
(EL) originates from their radiative 4f–4f transitions since
the EL wavelengths from these complexes are typical for
the rare earth ions they contain. However, since the f–f transi-
tion is in principle a parity-forbidden process, there remains
an essential challenge to improve EL quantum efficiency.
Therefore, it is necessary to try to find a novel class of organic
IR emissive materials, for instance, containing no rare earth
ions, in order to exploit the possibility of realizing organic
IR light-emitting devices. Ionic dyes are a class of materials
that can meet requirements as regards emission wavelength,
efficiency and lasing possibility because they are well known
as efficient laser dyes in the ultraviolet to IR region. The obser-
vation of near-IR EL at around 800 nm from an ionic laser dye,
LDS821 was recently reported.8
Since the successful development of organic LEDs,
scientific interest in the area of organic electronics has been
shifting towards organic solid-state lasers (SSLs).9,10 This is
because these two types of emissive device can share the
organic materials that have already been developed and
organic SSLs have a wider field of application. Efforts at
realizing organic SSLs are concentrating on the adoption of
various device structures. In this respect, photonic crystal
(PhC) structures, which are fabricated by using nanotechnol-
ogy, are particularly important since they can be introduced
directly into organic materials11 or hybridized with organic
materials.12,13 This relies on the advantages and unique
properties of organic materials in terms of processability and
softness.
In this article, recent progress on the development of
organic emissive materials and devices for photonic com-
munication applications are described. Two types of organic
material as possible emissive materials in the IR region are
investigated, an organic rare earth complex and an organic
ionic dye. In addition, novel light-emitting devices are
fabricated by combining two emerging technologies, organic
electronics and nanotechnology. This approach was realized
by incorporating PhC structures into organic emissive
materials, either by hybridization or nano-imprinting.
Copyright # 2004 John Wiley & Sons, Ltd.
*Correspondence to: H. Suzuki, NTT Photonics Laboratories,NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi,Kanagawa, 243-0198, Japan.E-mail: [email protected]
EXPERIMENTAL
Organic IR emissive material developmentAs organic IR emissive materials, an EL organic Er3þ com-
plex, erbium(III) tris(8-hydroxyquinoline) (ErQ) and an ionic
dye, IR1051 were chosen.14 The structure of ErQ is shown in
Fig. 1(a), whereas that of IR1051 has not yet been published,
and only its molecular formula is known (C41H33BCl2F4N2).
The photoluminescence (PL) properties of vacuum-depos-
ited thin-films of ErQ were measured by using either an
Arþ laser (six wavelengths between 457.9 and 488.0 nm) or
a blue laser diode (wavelength: 405 nm) as an excitation
source. Spin-coated thin-films of poly(N-vinylcarbazole)
(PVK) (Aldrich, secondary standard) doped with IR1051 (1
wt%) was used together with 2-(4-biphenylyl)-5-(4-t-butyl-
phenyl)-1,3,4-oxadiazole (PBD) (30 wt%, Dojindo Labora-
tories, scintillator grade) for both the PL and EL
measurements. The PL spectra of IR1051 were measured
with a 980 or 1064 nm laser diode as an excitation source.
To fabricate the EL devices, an indium-tin-oxide (ITO) coated
on a glass substrate (20�/&) and a vacuum-evaporated Al
electrode as the hole and electron injecting electrode, respec-
tively were used. The luminescence characteristics in the IR
region were measured by using an InGaAs charge-coupled-
device (CCD) and an IR photomultiplier. All the measured
emission spectra were corrected for the spectral response of
the detection system used.
Organic emissive device developmentAll the emissive devices described here contain an organic
emissive material and a PhC structure. The lattice constant
of the PhC structures was in the 210–440 nm range, which
meant that the emission wavelength of the organic emissive
materials must be in the red region. A fabrication process sui-
table for the combined PhC structure is also an important fac-
tor when selecting organic emissive materials. The organic
emissive materials used in the present study were 4-dicyan-
methylene-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran
(DCM, exciton laser dye) and 3-hexylpolythiophene (P3HT,
molecular weight: 87 000). The structures of the two materials
are shown in Fig. 1(b) and 1(c). These were chosen from the
stock of conventional materials since the knowledge already
accumulated on their basic luminescence characteristics facil-
itates an understanding of the emission properties of the
devices that are under study. The PhC structures that were
adopted here are two-dimensional (2D) hexagonal SiO2
PhCs, alumina nanohole arrays and those fabricated by the
nano-imprinting technique. The procedures for the fabrica-
tion of these PhC structures have been reported
elsewhere.15–17 A DCM doped thin-film of tris(8-hydroxy-
quinoline) aluminum (AlQ) was prepared by the co-evapora-
tion technique on either 2D hexagonal SiO2 PhCs or Si
substrates. The PhC structure was then fabricated directly
in the DCM/AlQ film deposited on Si substrates by the
nano-imprinting technique. By contrast, P3HT was posi-
tion-selectively injected from a solution into an alumina
nanohole array to fabricate point defects acting as active cen-
ters. Photoexcitation was carried out with an N2 laser
(337 nm) for DCM/AlQ and a YAG/SHG laser (532 nm) for
P3HT. The emissions were detected with a CCD.
RESULTS AND DISCUSSION
Development of organic IR emissive materialsAlthough ErQ is reported to be EL, only preliminary studies
have been undertaken with respect to its PL characteristics.2
As a first step in the development of organic IR emissive
materials utilizing organic rare earth complexes, the PL prop-
erties of vacuum deposited ErQ thin-films were examined.18
Figure 2 shows the PL spectrum of ErQ thin-film in the IR
region (1000–1700 nm) when it was excited at 457.9, 488.0
and 514.5 nm. In this wavelength region, two PL bands peak-
ing at around 1.2 and 1.55 mm were observed. The origin of
these two PL bands is assigned to the 4S3/2! 4I11/2 and4I13/2! 4I15/2 transitions for the 1.2 and 1.55 mm bands,
respectively.19 The PL spectrum is markedly dependent on
the excitation wavelength, as shown in Fig. 2. The absorption
spectrum of the ErQ thin-film reveals that the dominant
photoexcited species change from Er3þ to organic ligands
(8-hydroxyquinoline) in accordance with the excitation
wavelength shift to the blue region. This means that the
photoexcited species are generated much more effectively
by the shorter wavelength excitation since the absorption of
Er3þ is forbidden whereas that of the organic ligand is an
allowed transition. In fact, the PL intensity at 1.55 mm was
enhanced by more than three orders of magnitude by chan-
ging the excitation wavelength from 514.5 to 405 nm. The
observed marked enhancement in the PL intensity at
1.55 mm indicates that the excitation energy transfer from
the lowest energy triplet excited state of the organic ligand
to the Er3þ via the electron exchange interaction plays an
essential role in the PL process.20 This ligand-sensitized PL
mechanism is unique to organic rare earth complexes and
can be utilized for enhancing the luminescence intensity ori-
ginating from the 4f–4f forbidden transitions of rare earth
ions. When excited at 514.5 nm the ErQ film exhibits very
weak PL at 1.55 mm. The main reason for this reduction is
the depopulation of the PL emitting 4I13/2 state caused by
excited state absorption (ESA). This was experimentally con-
firmed by the observation of up-converted PL in the ultravio-
let region.
Figure 1. The structures of the organic emissive materials
used in this study: (a) ErQ, (b) DCM and (c) P3HT.
Copyright # 2004 John Wiley & Sons, Ltd. Polym. Adv. Technol. 2004; 15: 75–80
76 H. Suzuki, A. Yokoo and M. Notomi
Another potential organic emissive material in the IR
region is the ionic dye, IR1051.21 The fact that ionic dyes
contain no rare earth ions can be advantageous in terms of
improving the luminescence efficiency. The absorption and
EL spectra of IR1051 in PVK are shown in Fig. 3. The dye
exhibits an EL with two distinct peaks in the 0.9–1.2 mm
range. Although the wavelength range of the EL from IR1051
is unsuitable for use with silica optical fibers for long-range
optical communication, it is compatible with silicon-based
photocircuits, a new type of low-loss polymer optical fibers
(POF)22 and/or polymer waveguides23 making it possible to
realize active and/or passive optical devices for optical
information processing, communication, and interconnec-
tion. In addition, it was suggested that lasers emitting at
1.2 mm are promising for high-speed singlemode fiber local
area networks (LANs) of several Gbit/s.24,5 Figure 4 shows
the hypothetical band structure of the LED. This band
structure is based on the ionization potential and the bandgap
energy determined by spectroscopic and ionization potential
measurements. Figure 4 indicates that the doped IR1051
acted as an effective carrier trapping and radiative recombi-
nation center for the EL. The LED also exhibits broad visible
EL peaking at 544 nm, which shares about 60% of the total EL
intensity. It was concluded that the observed visible EL has its
origin not in the doped emissive dye but in PVK. The increase
in IR EL efficiency is an essential subject for future research
involving the optimization of the LED structure and the
combination of emissive and host materials.
This section is finalized by summarizing the advantages
and limits of the organic IR emissive materials reported to
date. Luminescence (PL and EL) in the 1.5 mm region has been
observed only in organic rare-earth complexes. There
Figure 2. The PL spectrum of a vacuum-deposited ErQ thin-film in the IR region (1000–
1700nm). The excitation wavelengths were 457.9, 488.0 and 514.5 nm from an Arþ laser.
Figure 3. The absorption and the EL spectra of IR1051 in PVK.
Organic emissive materials 77
Copyright # 2004 John Wiley & Sons, Ltd. Polym. Adv. Technol. 2004; 15: 75–80
remains, however, a vital challenge for improving their
luminescence efficiency despite the fact that the ligand-
sensitization scheme can provide a way to enhance it.
However, the development of organic emissive materials
containing no rare-earth elements can offer an alternative
way to meet the requirement for the luminescence efficiency.
However, they exhibit the luminescence of the wavelength
shorter than 1.3 mm.
Development of organic emissive devicesThe approach to realizing novel light-emitting devices is to
introduce PhC structures into organic emissive materials,
either by hybridization or nano-imprinting. The first example
is an organic PhC laser composed of a DCM/AlQ thin-film
vacuum-deposited on a silicon-based 2D PhC (lattice con-
stant: 210–440 nm),15 as shown in Fig. 5. In this laser, excited
states of DCM are generated by the photoexcited energy
transfer from the host AlQ when the DCM/AlQ film was
excited with an N2 laser. Distinct red lasing oscillations (las-
ing wavelength: 600–680 nm) from the doped DCM (see
Fig. 6) were detected, whose origin was assigned to the four
lowest photonic bandgaps (M1, K1, M2 and �1). A theoretical
consideration of the possible feedback mechanism at these
photonic bandgaps, together with the direct observation of
the in-plane lasing beam propagation, revealed that these las-
ing oscillations reflected the 2D nature of the organic PhC
Figure 4. The hypothetical band structure of the ITO/
IR1051:PBD:PVK/Al device.
Figure 5. The structure of an organic PhC laser composed
of a DCM/AlQ thin-film vacuum-deposited on a silicon-based
2D PhC.
Figure 6. The lasing spectra for hexagonal hole patterns
with lattice constants of (a) 380 nm and (b) 420 nm.
Figure 7. The fabrication procedure of an organic PhC laser
by imprinting periodic nanostructures directly into a DCM/AlQ
thin-film. The lattice constant is 400 nm.
78 H. Suzuki, A. Yokoo and M. Notomi
Copyright # 2004 John Wiley & Sons, Ltd. Polym. Adv. Technol. 2004; 15: 75–80
laser. In particular, the lasing mode originating from the K1
point was due to a purely 2D feedback mechanism, unlike
that observed in conventional semiconductor distributed
feedback (DFB) lasers. The second example is another type
of organic PhC laser fabricated by imprinting periodic nanos-
tructures (lattice constant: 400 nm) directly into a DCM/AlQ
thin-film with the same composition.17 Figure 7 summarizes
the fabrication procedure. Red lasing oscillations from the
doped DCM at around 600 nm were observed. An interesting
feature of this organic PhC laser is that the threshold input
optical energy for the lasing exhibits a marked dependence
on the depth of the periodic structures and thus the magni-
tude of the pressure during imprinting. The nano-imprinting
technique relies on the uniqueness of organic materials in
softness, and so can be a way of best utilizing the advantages
of these materials. Our final example involved position-selec-
tively injecting a solution-processable p-conjugated emissive
polymer, P3HT, into an alumina nanohole array (lattice
Figure 8. The structure of an alumina nanohole array position-selectively injected
with P3HT to form point defects: (a) top view and (b) side view. The lattice constant is
300 nm.
Figure 9. The PL spectrum of P3HT position-selectively injected into an alumina nanohole
array, together with that of a spin-coated P3HT film.
Organic emissive materials 79
Copyright # 2004 John Wiley & Sons, Ltd. Polym. Adv. Technol. 2004; 15: 75–80
constant: 300 nm) to fabricate point defects acting as active
centers,16 as shown in Fig. 8. This technique also relies on
an advantage of organic materials; namely that they are solu-
ble in conventional solvents making it possible to use various
wet processes for the fabrication. Figure 9 shows the PL spec-
trum of P3HT position-selectively injected into an alumina
nanohole array, together with that of a spin-coated P3HT
film. A sharp emission (FWHM: 3 nm) was observed from
the P3HT/alumina nanohole array hybrid sample. This
sharp emission was confirmed to correspond to the defect
levels in a 2D PhC composed of the alumina nanohole array
on the basis of theoretical calculations. Although the organic
emissive materials that have so far been combined with PhC
structures exhibit the luminescence in the visible region, the
results described earlier are useful to extend the research in
the IR region. The suitable combination between an organic
IR emissive material and a PhC structure can be selected on
the basis of its processability and luminescence wavelength,
as carried out for organic visible emissive materials.
CONCLUSION
Recent efforts to develop novel types of organic emissive
materials and devices for photonic communication applica-
tions are described. The research on organic IR emissive
materials development is in its preliminary stage, and efforts
by a number of scientists will be needed to obtain materials
suitable for practical use. Note that the use of both the unique
properties of organic materials and nanostructures is a pro-
mising way to accelerate this research. The target of the cur-
rent efforts is straightforward, namely the realization of
organic IR lasers by combining organic IR emissive materials
with PhC structures. Further development both of organic
emissive materials and PhC structures will lead to the realiza-
tion of new types of laser and the clarification of the funda-
mental characteristics of PhCs.
AcknowledgmentsWe thank T. Tamamura, M. Nakao, H. Masuda, S. Hoshino
and Y. Nishida, K. Yuzawa, Y. Hattori, N. Matsumoto, Y.
Shimizu and M. Kumeda for their cooperation and helpful
discussions.
REFERENCES
1. Suzuki H. Organic infrared LED for communication appli-cations. In Organic Semiconductor Electronics, Taniguchi A,Suzuki H, Fujita J, Kobayashi S, Hotta S, Hirose Y (eds).Bunshin Shuppan: Tokyo, 2002; section 2.1, chapter 2, 37–52(in Japanese).
2. Gillin WP, Curry RJ. 1.54mm electroluminescence fromerbium(III) tris(8-hydroxyquinoline) (ErQ)-based organiclight-emitting diodes. Appl. Phys. Lett. 1999; 75: 1380–1382.
3. Sun RG, Wang YZ, Zheng QB, Zhang HJ, Epstein AJ.1.54mm infrared photoluminescence and electrolumines-cence from an erbium organic compound. J. Appl. Phys.2000; 87: 7589–7591.
4. Harrison BS, Foley TJ, Bouguettaya M, Boncella JM,Reynolds JR, Schanze KS, Shim J, Holloway PH,Padmanaban G, Ramakrishnan S. Near-infrared electrolu-
minescence from conjugated polymer/lanthanide por-phyrin blends. Appl. Phys. Lett. 2001; 79: 3770–3772.
5. Kawamura Y, Wada Y, Hasegawa Y, Iwamuro M, KitamuraT, Yanagida S. Observation of neodymium electrolumines-cence. Appl. Phys. Lett. 1999; 74: 3245–3247.
6. Khreis OM, Curry RJ, Somerton M, Gillin WP. Infraredorganic light emitting diodes using neodymium tris-(8-hydroxyquinoline). J. Appl. Phys. 2000; 88: 777–780.
7. Hong Z, Liang C, Li R, Zang F, Fan D, Li W, Hung LS, LeeST. Infrared and visible emission from organic electrolu-minescent devices based on praseodymium complex. Appl.Phys. Lett. 2001; 79: 1942–1944.
8. Suzuki H. Self-enhancement in the electroluminescence of anear-infrared ionic dye. Appl. Phys. Lett. 2000; 76: 1543–1545.
9. Tessler N. Lasers based on semiconducting organic materi-als. Adv. Mater. 1999; 11: 363–370.
10. Kranzelbinder G, Leising G. Organic solid-state lasers. Rep.Prog. Phys. 2000; 63: 729–762.
11. Meier M, Dodabalapur A, Rogers JA, Slusher RE, Mekis A,Timko A, Murray CA, Ruel R, Nalamasu O. Emissioncharacteristics of two-dimensional organic photonic crystallasers fabricated by replica molding. J. Appl. Phys. 1999; 86:3502–3507.
12. Berggren M, Dodabalapur A, Slusher RE, Bao Z, Timko A,Nalamasu O. Organic lasers based on lithographicallydefined photonic-bandgap resonators. Electron. Lett. 1998;34: 90–91.
13. Meier M, Mekis A, Dodabalapur A, Timko A, Slusher RE,Joannopoulos JD, Nalamasu O. Laser action from two-dimensional distributed feedback in photonic crystals.Appl. Phys. Lett. 1999; 74: 7–9.
14. Casalboni M, De Matteis Prosposito FP, Pizzoferrato R.Optical investigation of infrared dyes in hybrid thin films.Appl. Phys. Lett. 1999; 75: 2172–2174.
15. Notomi M, Suzuki H, Tamamura T. Directional lasingoscillation of two-dimensional organic photonic crystallasers at several photonic band gaps. Appl. Phys. Lett.2001; 78: 1325–1327, and references cited therein.
16. Yokoo A, Notomi M, Suzuki H, Nakao M, Tamamura T,Masuda H. Emission from functional-polymer-injectedpoint defects in two-dimensional photonic crystals. IEEEJ. Quantum Electron. 2002; 38: 938–942, and references citedtherein.
17. Yokoo A, Suzuki H, Notomi M, Nakao M. Extended Abstractsof the 49th Spring Meeting. The Japan Society of AppliedPhysics and Related Societies, 2002; 28p-ZF-9, 1034 (inJapanese).
18. Suzuki H, Hoshino S, Nishida Y, Shimizu T, Kumeda M.Polym. Prep. Jpn. 2002; 51: 720 (in Japanese).
19. Digonnet MJF (ed.). Rare Earth Doped Fiber Lasers and Ampli-fiers. Marcel Dekker: New York, 1993.
20. Slooff LH, van Blaaderen A, Polman A, Hebbink GA, KlinkSI, Van Veggel FCJM, Reinhoudt DN, Hofstraat JW. Rare-earth doped polymers for planar optical amplifiers. J. Appl.Phys. 2002; 91: 3955–3980, and references cited therein.
21. Suzuki H. Infrared electroluminescence from an organicionic dye containing no rare-earth ions. Appl. Phys. Lett.2002; 80: 3256–3258.
22. Ishigure T, Koike Y, Fleming JW. Optimum index profile ofthe perfluorinated polymer-based GI polymer optical fiberand its dispersion properties. J. Lightwave Technol. 2000; 18:178–184.
23. Hikita M, Tomaru S, Enbutsu K, Ooba N, Yoshimura R,Usui M, Yoshida T, Imamura S. Polymeric optical wave-guide films for short-distance optical interconnects. IEEE J.Selected Topics Quantum Electron. 1999; 5: 1237–1242, andreferences cited therein.
24. Koyama F, Schlenker D, Miyamoto T, Chen Z, Matsutani A,Sakaguchi T, Iga K. 1.2 mm highly strained GaInAs/GaAsquantum well lasers for singlemode fibre datalink. Electron.Lett. 1999; 35: 1079–1080.
25. Koyama F, Schlenker D, Miyamoto T, Chen Z, Matsutani A,Sakaguchi T, Iga K. Data transmission over single-modefiber by using 1.2-mm uncooled GaInAs-GaAs laser for Gb/slocal area network. IEEE Photon. Technol. Lett. 2000; 12: 125–127.
80 H. Suzuki, A. Yokoo and M. Notomi
Copyright # 2004 John Wiley & Sons, Ltd. Polym. Adv. Technol. 2004; 15: 75–80