Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin...
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Next-Generation Materials for Plasmonics & Organic Spintronics Principal Investigators: Ajay Nahata, Michael Bartl & Ashutosh Tiwari NSF DMR 11-21252; www.mrsec.utah.edu Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection Megan C. Prestgard and Ashutosh Tiwari Left: Device schematic illustrating the all-electrical system used for spin injection and detection. The red section is ZnO and the gray section is the metal contact. Right: Inverse spin Hall effect results at room temperature. Applied Physics Letters 104, 122402 (2014) Discovery: We have observed a large inverse spin-Hall effect (ISHE) in ZnO films grown using Pulsed Laser Deposition. This discovery provides an entirely new means of measuring spin currents in semiconductors. Approach: Developed a novel device concept for the injection and detection of spin-polarized carriers. Results and Significance: First electrically detected measurement of the ISHE response in ZnO. The results illustrate the potential of ZnO in future spintronic devices, creating a path for achieving next- generation all-electrical transparent spintronic devices.
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Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection Megan C. Prestgard and Ashutosh Tiwari. - PowerPoint PPT Presentation
Transcript of Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin...
Next-Generation Materials forPlasmonics & Organic Spintronics
Principal Investigators: Ajay Nahata, Michael Bartl & Ashutosh TiwariNSF DMR 11-21252; www.mrsec.utah.edu
Observation of the inverse spin Hall effect in ZnO thin films: An all-electrical approach to spin injection and detection
Megan C. Prestgard and Ashutosh Tiwari
Left: Device schematic illustrating the all-electrical system used for spin injection and detection. The red section is ZnO and the gray section is the metal contact. Right: Inverse spin Hall effect results at room temperature.
Applied Physics Letters 104, 122402 (2014)
Discovery: We have observed a large inverse spin-Hall effect (ISHE) in ZnO films grown using Pulsed Laser Deposition. This discovery provides an entirely new means of measuring spin currents in semiconductors.Approach: Developed a novel device concept for the injection and detection of spin-polarized carriers. Results and Significance: First electrically detected measurement of the ISHE response in ZnO. The results illustrate the potential of ZnO in future spintronic devices, creating a path for achieving next-generation all-electrical transparent spintronic devices.
![J.-P. Attan´e, and M. Jamet arXiv:1305.2602v1 …arXiv:1305.2602v1 [cond-mat.mtrl-sci] 12 May 2013 Spin Pumping and Inverse Spin Hall Effect in Germanium J.-C. Rojas-S´anchez,1](https://static.fdocuments.us/doc/165x107/5fbe8772e09ad20ee466e6a8/j-p-attane-and-m-jamet-arxiv13052602v1-arxiv13052602v1-cond-matmtrl-sci.jpg)
