NREL Considerations for a Standardized Test for PID of Cristalline Silicon PV Modules

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    NRELisanationallaboratoryoftheU.S.DepartmentofEnergy,OfficeofEnergyEfficiencyandRenewableEnergy,operatedby theAllianceforSustainableEnergy,LLC.

    Considerationsfora StandardizedTestfor

    PotentialInducedDegradationofCrystalline

    Silicon PVModules

    2012PVMRW

    Peter

    Hacke

    February29,2012

    NREL/PR-5200-54581

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    2

    Majorcontributionsfrom:

    SteveGlick

    Ryan

    SmithMikeKempe

    Steve

    JohnstonJoelPankow

    SarahKurtz

    KentTerwilliger

    Dirk

    JordanSteveRummel

    Alan

    AnderbergBillSekulic

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    3

    Motivation

    Overthepastdecade,therehavebeenobservationsofmodule

    degradationandpowerlossbecauseofthestressthatsystem

    voltagebiasexerts.

    Moresensitive

    modules

    Highersystemvoltage

    Thisresultsinpartfromqualificationtestsandstandardsnot

    adequatelyevaluatingforthedurabilityofmodulestothelongterm

    effectsof

    high

    voltage

    bias

    that

    they

    experience

    in

    fielded

    arrays.

    Thistalkdealswithfactorsforconsideration,progress,and

    informationstillneededforastandardizedtestfordegradationdue

    tosystemvoltagestress.

    Ohno!

    our

    modules

    are

    down

    40%,

    wethinkitispotentialinduceddegradationanonymousmodulemanufacturer,2010

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    4

    Timelineforsystemvoltagedurability

    Needfor

    abetter

    standard

    for

    system

    voltage

    durability

    brought

    up

    severaltimesinthelastdecades,butdidnotgettraction.Lackoffield

    data,proposedtestsoverlyharsh.

    IbroughtthisupagainintheFall2010WorkingGroup2(WG2)meeting

    (Kln)andgotasmallworkingtogether,butmostpeoplewereinthe

    processofgettingexperienceaboutsystemvoltageeffects.

    Spring2011WG2meeting(Shanghai),indicationsofincreasedurgency

    forastandard,assembledmorepeopleforthistaskteam.

    Fall2011WG2meeting(Montreal),presentedaninitialdraftfor

    comments.

    Presentday

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    5

    Goalsforastandard twosteps

    1. Standalone

    test

    (new

    standard):

    Systemvoltagedurabilitytestforcrystallinesiliconmodules

    design

    qualification

    and

    type

    approval,

    submittedasaNewWorkItemProposaltoIEC,Dec.

    2011.

    2. Incorporatetest

    into

    IEC

    61215

    Seektoincorporateabovestandalonetestwithany

    necessarysupplementswithinIEC61215

    addtestafterclause10.13,DampHeatTest1000hunderconsideration.

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    6

    Designstandardforaclimate:Kppen climateclassification

    GROUPC:Temperate/mesothermal climates

    Maritime/oceanic climates: (Cfb, Cwb, Cfc)

    Humid subtropical climates (Cfa, Cwa)

    Consider for standard: Humid subtropical,

    and Humid Oceanic.

    Need to design for the market. More

    stressful environments exist, and thatshould be noted in the eventual standard.

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    ExperimentalOverview

    1) HV Test bed in Florida USA 2 module types fielded in February 2011

    2) Chamber testing of the same 2 module designstested in Florida

    85% RH; 85C, 60C, 50C

    Pmax

    vs t

    3) Comparison of failure rates for determination of

    acceleration factors and failure mechanisms for

    input into standardized test

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    Definitions

    S.Pingeletal.,PotentialInducedDegradationofSolarCellsandPanels,35thIEEEPVSC,Honolulu,2010,pp.28172822.

    ElectroluminescenceofmcSimodulestringsindicatingshuntinginthenegativeportionofacentermounted or

    floating

    string

    Electrochemical

    corrosioncSi

    Mon&Ross

    JPL,1985 Polarization

    cSi

    Swanson

    SunPower,2005

    ?Otherpowerloss

    thin

    films

    unpublished

    Delamination,corrosion

    aSi

    Wohlgemuth

    BPSolar,

    2000

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    Definitions

    S.Pingeletal.,PotentialInducedDegradationofSolarCellsandPanels,35thIEEEPVSC,Honolulu,2010,pp.28172822.

    ElectroluminescenceofmcSimodulestringsindicatingshuntinginthenegativeportionofacentermounted or

    floating

    string

    Electrochemical

    corrosioncSi

    Mon&Ross

    JPL,1985 Polarization

    cSi

    Swanson

    SunPower,2005

    ?Otherpowerloss

    thin

    films

    unpublished

    Delamination,corrosion

    aSi

    Wohlgemuth

    BPSolar,

    2000

    Needsanunambiguousname

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    Definitions thisstandardwillcover

    S.Pingel

    et

    al.,

    PotentialInducedDegradationofSolarCellsandPanels,35thIEEEPVSC,Honolulu,2010,pp.28172822.

    ElectroluminescenceofmcSimodulestringsindicatingshuntinginthenegativeportionofacentermounted or

    floating

    string

    Electrochemical

    corrosioncSi

    Mon&Ross

    JPL,1985 Polarization

    cSi

    Swanson

    SunPower,2005

    ?Otherpowerloss

    thin

    films

    unpublished

    Delamination,corrosion

    aSi

    Wohlgemuth

    BPSolar,

    2000

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    Definitions thisstandardwillcover

    S.Pingel

    et

    al.,

    Potential

    Induced

    Degradation

    of

    Solar

    Cells

    and

    Panels,

    35th

    IEEE

    PVSC,

    Honolulu,

    2010,

    pp.

    28172822.

    ElectroluminescenceofmcSimodulestringsindicatingshuntinginthenegativeportionofacentermounted orfloatingstring

    Polarization

    cSi

    Swanson

    SunPower,2005

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    Systemvoltagedurability

    Designedto

    cover

    cSi

    MorethanjustPIDofconventionalcells/modules

    Polarization

    (like

    SunPower)

    NonreversibleelementsofPID

    Rearjunctionbifacialcells. ECNbifacial/YingliPanda

    HIT

    cells

    Framed/unframedmodulesofvarioustypes

    Longtermviewforharmonizationwiththinfilmsystemvoltagedurability

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    Factorsfortest leakagecurrent

    Glass(Nacontent)

    Circuitresistancefactors cuttingrelevantseriesRcutsdegradation

    Glassface

    (H2O,conductivedirt)

    Framematerials,

    tapes,

    and

    design

    Interfaces

    Encapsulant

    Groundingscheme

    (groundedvs.ungrounded)

    Voltagepotential

    of

    active

    layer,

    and

    leakage

    from

    that

    voltagetogroundgoverndegradationinsusceptiblemodules

    T.J.McMahone,Prog.Photovolt:Res.Appl.2004;12:235248

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    Testfactors

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

    -40%

    -35%

    -30%

    -25%

    -20%

    -15%

    -10%

    -5%

    0%

    5%

    1 2 3 4 5 6 7 8 9

    Voltage position (1=negative, 9=most positive)

    %changeinpower

    Power Loss vs. Position in String:Polarization, SunPower Modules

    R . M. Swanson, The surface polarization effect in high-efficiency

    solar cells, PVSEC-15, Shanghai

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    Testfactors

    Completingthecircuittogroundinamanner

    representativeof

    mfg.

    module

    mounting

    scheme

    Leakagecurrentmaybemeasuredasinindicatorof

    modulepackageresistance

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

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    Testfactors

    Alfoil,carbonfilm,etc,forsurfaceconductivity

    +Quick/cheap

    +Goodscreeningtest

    Wontdifferentiatehumidityeffects

    (waterleachesNalimeglass)

    unclearhowitconnectstotexturedglass

    bypassesframe

    or

    laminate

    mounts

    ability

    to

    reducedegradation,limitingfixestoPID

    www.bangkoksolar.com

    From:C.R.Osterwald,SolarEnergyMaterials&SolarCells79(2003)2133

    *Modulesthatlackaframeandusemountingpointsbondedtothebacksheetglass

    shownodamage[totheextenttested].

    *Damage

    rates

    can

    be

    slowed

    if

    leakage

    currents

    that

    are

    caused

    by

    voltage

    potentialsbetweentheframeandtheinternalcircuitryarereduced.

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature Pho

    to:ErikEikelboom

    2011:10:1

    7

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    Testfactors

    Module leakage vs. humidity

    P.Hackeet.al.,25th EPVSEC,610September2010,Valencia,Spain

    Surfaceconductivityofsodalimeglassvs.humidity

    Becauseweneedtomeasurethe

    performanceofnotonlythemodule

    laminate,buttheframeormounts,the

    standardaswrittenuseshumidityforthe

    circuitto

    ground.

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

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    Testfactors

    Degradation vs. time of mc-Si modules, -600 V, 85% RH

    P. Hacke et al., Testing and Analysis for Lifetime Prediction of Crystalline Silicon PV ModulesUndergoing Degradation by System Voltage Stress, 38th IEEE PVSC, Austin, 2012

    50C

    60C

    85C

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

    RH=85%

    Temperature dependence, repeatable Arrhenius behavior over temperature range, unless alternate conduction paths exist

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    Testlevels

    D.Buemi,ThinFilmPVPowerstheNumber1GlobalSolar

    Integrator,davebuemi.com,

    accessed

    Feb

    22,

    2012

    Systemvoltage,noweffectively

    governedby

    IEC

    61730

    2s

    partialdischargetest,notPID,

    generally

    Testat

    rated

    system

    voltage

    Maximumnameplatevalue(behindthe

    fence/utilitiesdontruntoULcode)

    Bothpolarities(ifnotpolarityisspecified)

    Slight

    acceleration

    since

    actual

    operating

    V

    lower

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

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    Forcontinuousmetallicframesencasingthe

    perimeterofthemodule,thegroundterminalofthe

    highvoltagepowersupplyshallbeconnectedtoa

    modulegroundingpointofthemodule.

    If(1)thePVmoduleisprovidedorisspecifiedforuse

    withmeansformountingand(2)themoduleis

    designedandspecifiednottobeconnectedtoground,

    thensuchmethodofmountingthemoduleshallbe

    implementedto

    the

    extent

    possible.

    Testlevels

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

    http://www.solarframeworks.comSolarFrameWorksCo,BIPVCoolPly

    AccessedFeb22,2012

    Draftstandard:

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    Testlevels

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

    85%RHdampheatchamber,alevelthatchambers

    arecapableofholding,uniformly

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    Testlevels

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

    Whatlevelofstressinanacceleratedtestsreproduces

    wellthefailuremodesweseektotestfor?

    Howlong

    should

    it

    be

    stressed

    at

    that

    temperature?

    Whatistheaccelerationfactor?

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    Failuremodeinfieldedmodule

    Seriesresistancelosses,asseeninchambertests,arenot

    yetobserved

    in

    the

    field

    ModulemountedinFlorida,USAaftertenmonthswiththeactivelayerbiasedat

    1500

    V

    during

    the

    day

    degraded

    to

    0.35

    Pmax_0

    EL Thermography

    PL(inVoc)

    Dark=recombination

    PL(inJsc)

    Light=seriesresistance

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    Stepstressfordeterminationoffailuremode

    Optical

    E

    L

    Thermography

    SiNxoxidation:notseeninfield!

    PL(inVoc)

    Dark=recombination

    PL(inJsc)

    Light=seriesresistanceMixed

    mode

    Seriesresistance/recombination

    PIDrecombination

    50C,50%RH 70C,70%RH 85C,85%RHEachstep:

    1000V

    stress

    145

    h

    +1000Vrecovery145h

    (145hpreconditioningatT&RHlevel

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    Performanceoftwomoduletypes

    InFlorida,

    USA

    600Vapplied

    logarithmicallywith

    irradiance

    333days

    Inchamber

    85%RH

    600V

    Type2,85

    Type2,60

    Type2,50

    Type1

    Type2

    Moredetailsat2012IEEEPVSC

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    Performanceoftwomoduletypes

    InFlorida,

    USA

    600Vapplied

    logarithmicallywith

    irradiance

    333days

    Inchamber

    85%RH

    600V

    Type2,85

    Type2,60

    Type2,50

    Type1

    Type2 ModuleType1:Acceptable

    performanceinthefield

    surviveswithlessthan5%

    powerdropinchamber

    with85%

    RH,

    60C,

    rated

    systemvoltage,for96h

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    Performanceoftwomoduletypes

    InFlorida,

    USA

    600Vapplied

    logarithmicallywith

    irradiance

    333days

    Inchamber

    85%RH

    600V

    Type2,85

    Type2,60

    Type2,50

    Type1

    Type2 ModuleType1:Acceptable

    performanceinthefield

    surviveswithlessthan5%

    powerdropinchamber

    with85%

    RH,

    60C,

    rated

    systemvoltage,for96h

    ModuleType

    2:

    5%

    powerdropin4934h

    inFloridaand12h in

    chamberat60 C,

    (consideredafailing

    module)Moredetailsat2012IEEEPVSC

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    Testlevels

    Usecondition:

    Florida,

    USA,

    600

    V

    simulated

    array

    V

    Accelerationcondition:85%RH,Tasplotted

    Failure:0.95Pmax_0

    AF=427at60C,85%RH

    Testduration,96h

    Fieldequivalent:4.7y

    Thefollowingconditionsshallbeapplied:

    Chamberairtemperature60C 2C

    Chamber

    relative

    humidity

    85

    %

    5

    %

    RH Testduration96h

    Voltage:moduleratedsystemvoltageandpolarities

    (onemoduleperpolarity)

    Voltage Mounting/grounding

    Humidity,surface

    conductivity Temperature

    Draftstandard:

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    Nextsteps:Testingatmultiplelabs

    Determinereproducibility

    23samplespercondition

    Presumably85%

    RH

    60C,

    but

    consider

    alternates

    forpostIEC61215tests

    5labs

    NREL

    ASU

    letusknowifyouareinterested!

    Samplesfrom3manufacturers

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    Thankyou