11 November 2010 Natascha Hörmann Computing at HEPHY Evaluation 2010.
Noise and Capacitor M.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna) 24 September 2015.
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Transcript of Noise and Capacitor M.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna) 24 September 2015.
![Page 1: Noise and Capacitor M.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna) 24 September 2015.](https://reader035.fdocuments.us/reader035/viewer/2022062517/56649ecf5503460f94bdd209/html5/thumbnails/1.jpg)
Noise and CapacitorM.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna)
24 September 2015
![Page 2: Noise and Capacitor M.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna) 24 September 2015.](https://reader035.fdocuments.us/reader035/viewer/2022062517/56649ecf5503460f94bdd209/html5/thumbnails/2.jpg)
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 2
Richard @ Trieste:“increase C asmuch as possible”
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Capacitor
Presently: 10nF / 500V (0805 size) New: 100nF / 200V (0805 size)
TDK CGJ4J3X7T2D104K125AA Reel (2000 pcs.) ordered last Friday, delivered on
Tuesday
Voltage rating reduction is not an issue, because with new cap we can still bias up to 400V DSSDs do not withstand much more than 200V
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 3
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Test Setup with FADC System Sine
generator injects CM noise via transformer
Tested with DESY modules (single DSSD) and L5.903 (class B ladder)
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 4
![Page 5: Noise and Capacitor M.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna) 24 September 2015.](https://reader035.fdocuments.us/reader035/viewer/2022062517/56649ecf5503460f94bdd209/html5/thumbnails/5.jpg)
Results of L3 (Noise Injected in n-Side)
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 5
Chip average Strip RMS (without CMC) vs. noise frequency With 10nF With 100nF
![Page 6: Noise and Capacitor M.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna) 24 September 2015.](https://reader035.fdocuments.us/reader035/viewer/2022062517/56649ecf5503460f94bdd209/html5/thumbnails/6.jpg)
Results of L5 (Noise Injected in n-Side)
Chip average Strip RMS (without CMC) vs. noise frequency With 10nF With 100nF 24 September
2015M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 6
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Results of L6 (Noise Injected in L5 n)
Significant effect also on L6 module (even though injection is still done on L5 n-side) Both modules are attached to same DC/DC converters
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 7
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Results of L5.903 FW (Noise Injected in n)
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 8
Chip average Strip RMS (without CMC) vs. noise frequency With 10nF With 100nF
![Page 9: Noise and Capacitor M.Friedl, R.Thalmeier, H.Yin (HEPHY Vienna) 24 September 2015.](https://reader035.fdocuments.us/reader035/viewer/2022062517/56649ecf5503460f94bdd209/html5/thumbnails/9.jpg)
Other Results
APV hangs up above certain noise injection level Fully reproducible
Threshold is increased by a factor of ~10 when changing 10nF 100nF
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 9
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Source Test with FW Module of L5.903 (1/2) p-side:
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 10
10nF
100nF
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Source Test with FW Module of L5.903 (2/2) n-side:
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 11
10nF
100nF
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Summary Noise immunity can be significantly improved by
increasing 10nF 100nF Shown in all noise injection measurements No impact on source measurement without noise
injection
Recommendation: Use 100nF caps for Origami flex assembly (received by
Toru today) Replace 10nF with 100nF on hybrid boards (delivered to
Pisa, on the way to Melbourne)
Cap locations on Origamis and hybrid boards are specified on the following pages 24 September
2015M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 12
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Capacitor Location (1/4)
Origami_-z and _ce
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 13
Origami_+z
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Capacitor Location (2/4)
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 14
L3 hybrid, P side L3 hybrid, N side
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Capacitor Location (3/4)
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 15
L6_+z (FW) hybrid, P side
L6_+z (FW) hybrid, N side
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Capacitor Location (4/4)
24 September 2015
M.Friedl, R.Thalmeier, H.Yin: Noise and Capacitor 16
L6_-z (BW) hybrid, P side
L6_-z (BW) hybrid, N side