n&k Analyzers...n&k Analyzers TFUG -- Sept. 21, 2005 Comprehensive Metrology Tools for...
Transcript of n&k Analyzers...n&k Analyzers TFUG -- Sept. 21, 2005 Comprehensive Metrology Tools for...
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n&k Analyzersn&k Analyzers
TFUG -- Sept. 21, 2005
Comprehensive Metrology Tools forCharacterization and Measurements of
Ultra-Thick Films, Determination of Optical Properties of Materials
n&k Technology, Inc.Santa Clara, CA
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OutlineOutline
TFUG -- Sept. 21, 2005
Introduction
n&k Technology, Inc.
Algorithm and Hardware Improvements
Examples of Ultra-thick Photoresists
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Section I: IntroductionSection I: Introduction
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Wafer bumping packaging technology to pack chips more closely together
Bump bonding technique uses ultra-thick resists to define size and location of bonds
Resist thickness typically range in 50 to 100 µm, or more, substantially more than resists used in IC manufacturing
n&k Technology provides a solution to address the needs of Advanced Packaging industries
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Section II: The CompanySection II: The Company
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The Company
Optical Systems
Products
Forouhi-Bloomer (FB) Dispersion
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The Company: The Company: n&k Technology, Inc.n&k Technology, Inc.
TFUG -- Sept. 21, 2005
n&k Technology designs, manufactures, and sells systems, termed n&k Analyzers, for characterization of thin films, and measurements of optical properties and critical dimensions.
Founded in 1992 by Dr. Rahim Forouhi and Dr. Iris Bloomer.
Privately held.
August 1999 - Al Shugart International invested in n&k Technology.
n&k Technology’s roots originated in the 1980s with the discovery of the equations for n and k by the founders.
n&k Technology offers a broad product portfolio for production and R&D applications in:− Semiconductor industry (Si and GaAs)− Photomasks industry− Data storage market (magnetic, optical, and magneto-optical)− Flat panel displays − Optical coatings and filters
Currently, more than eighty (250) companies, operating in twelve (12) countries, use n&k Analyzers, multiple units.
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Fully Automated n&k Analyzers for Wafer FabricationFully Automated n&k Analyzers for Wafer Fabrication~3300 Platform~
TFUG -- Sept. 21, 2005
n&k 3300 Bridge ToolFor 2" – 12" Wafers
n&k 3300For 12" (300mm)Wafers
•Semiconductor Wafer Processing Applications (Si, GaAs, InP, etc.) •Microspot Technology•Pattern recognition•Automated X-Y Mapping
•Automated Loading/Unloading•Automated Z-Direction Stage Movement•Supporting manual load port, SMIF, and FOUP
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n&k Analyzer 1700n&k Analyzer 1700
TFUG -- Sept. 21, 2005
Overviewn&k 1700 Technology
• n&k Patented, all Reflective OpticsDUV-Visible-NIR, 190 nm - 1000 nm, 1 nm step
• Simultaneous Determination of n, k and thickness• Agilent Technologies Spectrophotometer Electronics• Cognex Machine Vision• 8" x 8" or 12" x 12" Automated Stage• n&k Technology Thin Film Data Analysis Software• n&k Technology Patented, Microspot Feature Analysis
Software
Application:• Ultra-High Resolution Thin Film Metrology on
Patterned Wafers• Micro-Feature Film Parameter Mapping
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Optical System (Optical System (n&k Technologyn&k Technology))
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n&k Analyzersn&k Analyzers DifferentiatorDifferentiator
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Wavelength Range− The measured raw data should cover the entire deep UV
to near IR wavelength rangeSignal to Noise− The measured raw data should have a good signal to
noise ratio over the entire wavelength rangePhysical Model− A valid physical model should be used to analyze the
measured raw data
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Dispersion EquationsDispersion Equations
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Forouhi-Bloomer:
Cauchy:
Harmonic-Oscillator:
k kk k
( )λλ λ
= + +012
24
ε ωω ω ω
ω ω γ ω12 2
202 2
02 2 2 2 21( )
( )( )
= − = +−
− +∑n k p
ii
i i
i
n nn n
( )λλ λ
= + +012
24
εγ ωω
ω ω γ ω2
2
02 2 2 2 22= =− +∑nk i p
ii
i
i
( )( )
k EA E E
E B E Ci g
i ii
q
( )( )
=−
− +∑2
2
∑ +−+
+∞=q
i ii
oioi
CEBECEBnEn 2)()(
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ii--line Photoresistline Photoresist
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
200 300 400 500 600 700 800 900
Ref
lect
ance
Photoresist (i line) / Si-sub
Green line: Theoretical (from F-B)
Wavelength (nm)
Red line: Measured
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
200 300 400 500 600 700 800 900R
efle
ctan
ce
Green line: Theoretical (from Cauchy)
Photoresist (i line) / Si-sub
Wavelength (nm)
Red line: Measured
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
200 300 400 500 600 700 800 900
Ref
lect
ance
Green line: Theoretical (from Oscillator)
Red line: Measured
Photoresist (i line) / Si-sub
Wavelength (nm)
0.0
0.5
1.0
1.5
2.0
2.5
200 300 400 500 600 700 800 900Wavelength (nm)
Opt
ical
Con
stan
ts
n
k
Photoresist (i line)(F-B)
0.0
0.5
1.0
1.5
2.0
2.5
200 300 400 500 600 700 800 900Wavelength (nm)
Opt
ical
Con
stan
ts n
k
Photoresist (i line)(Cauchy)
0.0
0.5
1.0
1.5
2.0
2.5
200 300 400 500 600 700 800 900Wavelength (nm)
Opt
ical
Con
stan
ts n
k
Photoresist (i line)(Oscillator)
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SiONSiON
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0.0
0.1
0.2
0.3
0.4
200 300 400 500 600 700 800 900
Ref
lect
ance
t = 297 A
Red line: Measured
SiON / Si-sub
Wavelength (nm)
Green line: Calculated (from F-B)
0.0
0.1
0.2
0.3
0.4
200 300 400 500 600 700 800 900R
efle
ctan
ce
t = 331 A
Red line: Measured
SiON / Si-sub
Wavelength (nm)
Green line: Calculated (from Oscillator)
0.0
0.1
0.2
0.3
0.4
200 300 400 500 600 700 800 900
Ref
lect
ance
t = 306 A
Red line: Measured
SiON / Si-sub
Green line: Calculated (from Cauchy)
Wavelength (nm)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200 300 400 500 600 700 800 900
Wavelength (nm)
Opt
ical
Con
stan
ts n
k
SiON(F-B)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200 300 400 500 600 700 800 900
Wavelength (nm)
Opt
ical
Con
stan
ts
n
k
SiON(Oscillator)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200 300 400 500 600 700 800 900Wavelength (nm)
Opt
ical
Con
stan
ts n
k
SiON(Cauchy)
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SiO2SiO2
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0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
200 300 400 500 600 700 800 900
Ref
lect
ance
t = 1066 A
Green line: Calculated (from F-B)
Red line: Measured
SiO2 / Si-sub
Wavelength (nm)
0.0
0.5
1.0
1.5
200 300 400 500 600 700 800 900Wavelength (nm)
Opt
ical
Con
stan
ts
n
k
SiO2(F-B)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
200 300 400 500 600 700 800 900R
efle
ctan
ce t = 1073 A
Green line: Calculated (from Oscillator)
Red line: Measured
SiO2 / Si-sub
Wavelength (nm)
0.0
0.5
1.0
1.5
200 300 400 500 600 700 800 900Wavelength (nm)
Opt
ical
Con
stan
ts
n
k
SiO2(Oscillator)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
200 300 400 500 600 700 800 900
Ref
lect
ance t = 1066 A
Green line: Calculated (from Cauchy)
Red line: Measured
SiO2 / Si-sub
Wavelength (nm)
0.0
0.5
1.0
1.5
200 300 400 500 600 700 800 900Wavelength (nm)
Opt
ical
Con
stan
ts
n
k
SiO2(Cauchy)
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TFUG -- Sept. 21, 2005
Section III: Improvements For Section III: Improvements For UltraUltra--thick Film Applicationsthick Film Applications
Typical Problem of Ultra-thick Film Analysis
Algorithm Improvements
Hardware Improvements
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TFUG -- Sept. 21, 2005
Typical Problem of UltraTypical Problem of Ultra--thickthickFilm Analysis Film Analysis –– Multiple Local MinimaMultiple Local Minima
0
20
40
60
80
100
200 300 400 500 600 700 800 900
R &
T (%
)
Wavelength (nm)
R-exp R-cal
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
6000 8000 10000 12000 14000 16000 18000 20000
Thickness (A)
Erro
r Bet
wee
n Ex
perim
ent A
nd
Cal
cula
ted
Ref
lect
ance
(RM
S)
Wrong solution!
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A More Robust Way to EstimateA More Robust Way to EstimateA FilmA Film’’s Starting Thicknesss Starting Thickness
Phase ϕ = 2π/λ *∆= 2π/λ * (2*n*t*cosθ')
∝ n*t / λ
Number of fringes isproportional to n and t
0
20
40
60
80
100
200 300 400 500 600 700 800 900
R &
T (%
)
Wavelength (nm)
R-exp
20
40
60
80
100
1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
R &
T (%
)
eV
R-exp
iline resist in λ space iline resist in 1/λ space
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Tests on Simulated SpectraTests on Simulated Spectra
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0
50
100
150
200
250
300
350
400
450
50 100 150 200 250 300 350 400 450
Simultated Resist Thickness (Microns)
Cal
cula
ted
Thic
knes
s (M
icro
ns) Method 1
Method 2
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TFUG -- Sept. 21, 2005
Higher Resolution SpectrophotometerHigher Resolution SpectrophotometerReflectance of 300Reflectance of 300µµm Glass Slidem Glass Slide
5.5%
6.0%
6.5%
7.0%
7.5%
8.0%
8.5%
820 840 860 880 900 920 940 960 980 1000 1020
Wavelength (nm)
Ref
lect
ance
(%) Full Spectral
Range
5.5%
6.0%
6.5%
7.0%
7.5%
8.0%
8.5%
840 841 842 843 844 845
Wavelength (nm)
Ref
lect
ance
(%) Same Data,
Zoomed Range20x Improvement!
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Section IV: UltraSection IV: Ultra--thick Film Applicationsthick Film Applications
TFUG -- Sept. 21, 2005
Correlation with Profilometry
70 and 100µm Photoresist Measurements
Repeatability and Reproducibility of Results
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Applications: Ultra Thick FilmsApplications: Ultra Thick Films
TFUG -- Sept. 21, 2005
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TFUG -- Sept. 21, 2005
Applications: Ultra Thick FilmsApplications: Ultra Thick FilmsCorrelation with Correlation with ProfilometryProfilometry
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Example of 100 Example of 100 µµm Photoresist Spectram Photoresist Spectra
TFUG -- Sept. 21, 2005
Reflectance from 900 – 1000nm, 100um Resist
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TFUG -- Sept. 21, 2005
Applications: Ultra Thick FilmsApplications: Ultra Thick FilmsRepeatability and Reproducibility StudiesRepeatability and Reproducibility Studies
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ConclusionsConclusions
TFUG -- Sept. 21, 2005
Demonstrated ultra-thick resists capability provides manufacturers with a fast, accurate, repeatable, and non-destructive characterization tool for process monitoring.
No blindspots in the entire thickness range – due to innovative analysis algorithm.
Measured 300 µm film (eg, glass slide). High resolution detector allows comfortable measurement up to 600 µm, and more. Ultimate thickness not known – limited only by the quality of film.
Non-destructive, fast measurements – less than 3 seconds per site.
Excellent repeatability and reproducibility compared to traditional methods.