NIKO-SEM N- & P-Channel Enhancement Mode Field...
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Rev 1.3 1 Jul-10-2009 N- & P-Channel Enhancement Mode Field Effect Transistor P2204ND5G TO-252-5 Halogens Free & Lead Free NIKO-SEM D2 S2 G2 S1 D1 G1 ABSOLUTE MAXIMUM RATINGS (T C = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage V DS 40 -40 V Gate-Source Voltage V GS ±20 ±20 V T C = 25 °C 24 -19 Continuous Drain Current T C = 70 °C I D 19 -15 Pulsed Drain Current 1 I DM 60 -60 A T C = 25 °C 20.8 Power Dissipation T C = 70 °C P D 13.3 W Junction & Storage Temperature Range T j , T stg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R JC 6 °C / W Junction-to-Ambient R JA 42 °C / W 1 Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX STATIC V GS = 0V, I D = 250A Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = -250A N-Ch P-Ch 40 -40 V DS = V GS , I D = 250A Gate Threshold Voltage V GS(th) V DS = V GS , I D = -250A N-Ch P-Ch 1.6 -1.6 2.0 -2.0 3.0 -3.0 V Gate-Body Leakage I GSS V DS = 0V, V GS = ±20V N-Ch ±100 nA G : GATE D : DRAIN S : SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D N-Channel 40 22mΩ 24A P-Channel -40 33mΩ -19A G2 S2 G1 S1 D1/D2
Transcript of NIKO-SEM N- & P-Channel Enhancement Mode Field...
Rev 1.3
1 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
D2
S2
G2
S1
D1
G1
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
TC = 25 °C 24 -19 Continuous Drain Current
TC = 70 °C ID
19 -15
Pulsed Drain Current1 IDM 60 -60 A
TC = 25 °C 20.8 Power Dissipation
TC = 70 °C PD
13.3 W
Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RJC 6 °C / W
Junction-to-Ambient RJA 42 °C / W 1Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS UNIT PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX STATIC
VGS = 0V, ID = 250A Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250A
N-Ch
P-Ch
40
-40
VDS = VGS, ID = 250A Gate Threshold Voltage VGS(th)
VDS = VGS, ID = -250A
N-Ch
P-Ch
1.6
-1.6
2.0
-2.0
3.0
-3.0
V
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch ±100 nA
G : GATE D : DRAIN S : SOURCE
PRODUCT SUMMARY V(BR)DSS RDS(ON) ID
N-Channel 40 22mΩ 24A
P-Channel -40 33mΩ -19A
G2
S2G
1S
1
D1/
D2
Rev 1.3
2 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
VDS = 0V, VGS = ±20V P-Ch ±100
VDS = 32V, VGS = 0V
VDS = -32V, VGS = 0V
N-Ch
P-Ch
1
-1
VDS = 30V, VGS = 0V, TJ = 55 °C Zero Gate Voltage Drain Current IDSS
VDS = -30V, VGS = 0V, TJ = 55 °C
N-Ch
P-Ch
10
-10
A
VDS = 5V, VGS = 10V On-State Drain Current1 ID(ON)
VDS =-5V, VGS = -10V
N-Ch
P-Ch
60
-60 A
VGS = 7.0V, ID = 7A
VGS = -7.0V, ID = -5A
N-Ch
P-Ch
25
32
33
40
VGS = 10V, ID = 10A
Drain-Source On-State Resistance1 RDS(ON)
VGS = -10V, ID = -7A
N-Ch
P-Ch
19
28
22
33
mΩ
VDS = 10V, ID = 10A Forward Transconductance1 gfs
VDS = -10V, ID = -7A
N-Ch
P-Ch
25
18 S
DYNAMIC
Input Capacitance Ciss N-Ch
P-Ch
1145
1000
1450
1260
Output Capacitance Coss N-Ch
P-Ch
253
450
355
625
Reverse Transfer Capacitance Crss
N-Channel
VGS = 0V, VDS = 10V, f = 1MHz
P-Channel
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
P-Ch
94
108
142
163
pF
Total Gate Charge2 Qg N-Ch
P-Ch
23
20
Gate-Source Charge2 Qgs
N-Channel VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 10A
P-Channel N-Ch
P-Ch
3.6
3.2
nC
Rev 1.3
3 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
Gate-Drain Charge2 Qgd VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -7A N-Ch
P-Ch
3.0
2.7
Turn-On Delay Time2 td(on) N-Ch
P-Ch
3.2
9.7
6.4
19.4
Rise Time2 tr N-Ch
P-Ch
10.8
14.0
21.7
28.1
Turn-Off Delay Time2 td(off) N-Ch
P-Ch
17.1
28.7
30.8
51.6
Fall Time2 tf
N-Channel
VDS = 20V
ID 1A, VGS = 10V, RGEN = 6Ω
P-Channel
VDS = -20V
ID -1A, VGS = -10V, RGEN = 6Ω
N-Ch
P-Ch
5.3
17.8
10.7
32.2
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
IF = 10A, VGS = 0V Forward Voltage1 VSD
IF = -7A, VGS = 0V
N-Ch
P-Ch
1.2
-1.2 V
IF = 10A, dlF/dt = 100A / S Reverse Recovery Time trr
IF = -7A, dlF/dt = 100A / S
N-Ch
P-Ch
60
80 nS
Reverse Recovery Charge Qrr
N-Ch
P-Ch
43
75 nC
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH “P2204ND5G”, DATE CODE or LOT #
Rev 1.3
4 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
N-CHANNEL
Body Diode Forward Voltage Variation with Source Current and Temperature
25°C
T = 125°C
V - Body Diode Forward Voltage(V)
Is -
Rev
erse
Dra
in C
urre
nt(A
)
0.0010
0.01
0.1
0.4SD
0.2 0.6
V = 0V
1
10
100
A
GS
1.00.8 1.2
-55°C
1.4
Rev 1.3
5 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
1ms
100us
DC10ms
0.1
1
10
100
0.1 1 10 100
NOTE :1.VGS= 10V2.TC=25˚C3.RθJC = 6˚C/W4.Single Pulse
Operation in This Areais Limited by RDS(ON)
↓
0
20
40
60
80
100
120
140
160
180
200
0.0001 0.001 0.01 0.1 1 10
SINGLE PULSERθJC = 6˚C/WTC=25˚C
Rev 1.3
6 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
P-CHANNEL
Body Diode Forward Voltage Variation with Source Current and Temperature
25°C
-V - Body Diode Forward Voltage(V)
-Is -
Rev
erse
Dra
in C
urre
nt(A
)
0.0010
0.01
0.1
0.4SD
0.2 0.6
V = 0V
1
10
100
GS
AT = 125°C
1.00.8 1.2
-55°C
1.4
Rev 1.3
7 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
single Pluse
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
1.00E-02
1.00E-01
1.00E+00
1.00E+01
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Note
1.Duty cycle, D= t1 / t2 2.RthJC = 6 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJA(t) = r(t)*RthJC
0
20
40
60
80
100
120
140
160
180
200
0.0001 0.001 0.01 0.1 1 10
SINGLE PULSERθJC =6˚C/WTC=25˚C
1ms
100us
DC10ms
0.1
1
10
100
0.1 1 10 100
NOTE :1.VGS= 10V2.TC=25˚C3.RθJC =6˚C/W4.Single Pulse
Operation in This Areais Limited by RDS(ON)
↓
Rev 1.3
8 Jul-10-2009
N- & P-Channel Enhancement Mode Field Effect Transistor
P2204ND5G TO-252-5
Halogens Free & Lead Free
NIKO-SEM
TO-252-5 (DPAK) MECHANICAL DATA
mm mm Dimension
Min. Typ. Max. Dimension
Min. Typ. Max.
A 9.0 9.5 10.0 H 1.3 1.5 1.7
B 2.1 2.3 2.5 I 6.3 6.5 6.7
C 0.4 0.5 0.6 J 4.8 5.0 5.2
D 1.1 1.2 1.3 K 0.8 1.3 1.8
E 0.4 0.5 0.6 L 0.3 0.5 0.7
F 0.00 0.3 M 1.1 1.3 1.5
G 5.3 5.5 5.7 N
G
A
H
JIB
C
M
L
K
DE
F
