ABB Semiconductors Newsletter

1|11news

ABB inaugurates expanded Bipolar facilityIn order to meet the global power mar-kets’ increasing demands, ABB made a commitment to increase the overall pro-duction capacity of high power semicon-ductors. The most important feature of the new bipolar production line is the 150 mm wafer production line. Since 2008, ABB has been producing HVDC products using 150 mm wafers from a pilot line in the

current production area. Starting in 2012, the line will be a modern, fully equipped line producing all types of bipolar pro- ducts using 150 mm wafers. Anoth-er important new feature is the increased furnace capacity and the new configura-tion of the furnaces which allows various high temperature processes to be done in each single furnace.

Highlights

Page 2

- Marketing letter- Technology Trends BiMOS: BIGT- Magazine Articles

Pages 3 and 4

- BiMOS and Bipolar new qualified products and products in devel-opment with their main features and applications - Portrait: PowerParts AG

Page 5

- BiMOS and Bipolar obsolete products and replacements - Phased out products and last deliveries

Page 6

- IGCT devices, status and short term outlook. A short description of the target markets for the cur-rent generation of IGCTs as well as an insight into further impro- vements within the next year.- Publications calendar

Section 2

Marketing Letter

With this first newsletter issue, we would like to improve communication and reach out to our customers and dis-tributors. We will inform you about new developments on a quarterly basis and are grateful for your feedback and sug-gestions regarding content: We want to know what you want to know!With our increased production capacity, the main challenge will be to choose the most promising products for devel-opment in order to expand ABB’s pro-duct portfolio even further. November is the month for budgeting and planning the year to come. As we look forward, 2012 will be a year filled with new product developments and new technologies. We are counting on your continued support to achieve our common goal of successfully meeting the world’s ever-growing needs for high power semiconductors.

Technology Trends BiMOS

Now in product developmentBIGT: Diode and IGBT designed into one single chip, proven for 3.3 kV and 6.5 kV hard switching applications, offering more power on the same foot-print.In addition to increased power density, the BIGT features improved perfor-

mance in rectifier mode thanks to the larger diode area.BIGT technology will pave the way for future generations of IGBT-based products providing higher power densi-ties without the limitations imposed by diode performance (see figure above).

Magazine articles– Power Electronic Europe, December 2011: “StakPak™ IGBT Press-packs for the Industrial Market”– Bodo’s Power Systems, November 2011: “VIP Interview with Manfred Kraxenberger, Bipolar Production Line Manager of ABB Switzerland Ltd, Semi-

conductors”– Power Systems Design, North Ame-rica, December 2011: “IGCT device with extraordinary high SOA”– ABB Review Magazine issue 3/11: “Power on Tap” shows an application with ABB’s IGCT.

ABB news 1|11

Section 3

New Qualified ProductsBiMOS and Bipolar

Main Features: 1.7kV IGBT : – Higher Tvj(op) up to 150°C possible– More current up to 3600A Suitable applications : Induction Heating, Traction, Wind Power 3.3kV IGBT :– Increasing usage in high speed locomotives and EMUs– Higher Tvj(op) up to 150°C possible

– In Hipak2 and Hipak1 sizes together with Dual Diode Module Suitable for all topologies in traction application5SHY 40L4511:– Designed for low switching losses5STP 20N8500:– Increased junction temperature in comparison with predecessor 5STP 12N8500

Environmental SpecificationsBased on international environmental standards (primarily IEC 60721 series), guidelines are given under which the devices should be stored, transported and operated. Environmental specifica-

tions for HiPak modules and Bipolar devices in industry and traction are now available on our website (www.abb.com/semiconductors).

Application in focusInduction Heating

Operation Principle : A conductive and/or ferro-magnetic object is placed in an AC magnetic field causing it to produce thermal losses by induced currents and/or hysteresis lossesTopologies : – Series resonant voltage source inverter – Parallel resonant current source inverter

BiMOS and Bipolar Induction Heating products– Gold or proton doped Fast Thyristors for CSIs– E-doped Fast Thyristors for VSIs– Gold or proton doped Fast Recovery Diodes for VSIs– IGBTs for HF VSIs (module or press-pack)– IGCTs in MF CSIs

ABB news 1|11

Section 4

BiMOS products in the pipeline

Main Features of the upcoming products : 2.5kV IGBT : – Higher Tvj(op) up to 150°C possible– More current up to 1500A Suitable applications : Diesel Locomo-tives, Wind Power

3.3kV IGBT : – Higher Tvj(op) up to 150°C possible– In Hipak2 and Hipak1 sizes together with Dual Diode Module Suitable applications: Electric Loco-motives, Highspeed Trains, EMUs and Medium Voltage Drives

Bipolar products in the pipeline– 5SHY 50L5500 will add another voltage class to the HPT-IGCT family.Prototypes available.– New 4500V Fast Recovery Diodes

in housings H and L. Designed as NPC and Freewheel diodes for IGCT applications.Prototypes available in February 2012.

Portrait:ABB DistributorPower Parts AG

PowerParts AG was founded in 2002 after a management-buy-out of the „Electrical Components“ division of ABB Switzerland Ltd, Normelec. Currently, PowerParts has eight employees at their offices in Mägenwil, Switzerland and offers a wide-ranging portfolio of power semiconductors and components for low to high power requirements.Thanks to close cooperation with their suppliers, universal design platforms were created, which can be adapted for customer-tailored solutions in short time. Whether the customer needs a cooling rack, the assembly of a special plug on a GTO, or a complete design-tested rectifier, a switch, a power drive or a Softstarter, PowerParts can handle all electrical requirements. In order to better serve their customers, PowerParts now has their own assembly facility complete with testing equipment. Their main goal now and in the future is to provide the customers with the products they need combined with com-petent service and efficient logistics.www.powerparts.ch

ABB news 1|11

Section 5

BiMOS Obsolete productsMaterial/Replaced by5SMY 76H1200 5SMY 76H12805SMY 76J1200 5SMY 76J12805SMY 76K1201 5SMY 76K12805SMY 76M1200 5SMY 76M12805SMY 86H1200 5SMY 86H12805SMY 86J1200 5SMY 76J12805SMY 86K1201 5SMY 86K12805SMY 86M1200 5SMY 86M12805SMY 12M1701 5SMY 12M17215SMX 12L2511 5SMX 12L25165SLX 86E1200 na5SLX 76E1200 na5SLX 86F1200 na5SLX 76F1200 na5SLX 12H1200 na5SLX 76H1200 na 5SLX 86H1200 na5SLX 12L2507 5SLX 12L25175SLX 12L2505 5SLX 12L25155SLX 12M6500 5SLX 12M65205SLX 12M6501 5SLX 12M6521

BiMOS Phased-Out products

Material/Last Deliveries5SMX 76D1264 Dec. 20115SMX 76E1264 Dec. 20115SMX 76H1264 June 20125SMX 76K1264 June 20125SMX 76L1264 June 20125SMX 76M1274 June 20125SMX 86E1264 Dec. 20115SMX 86E1274 Dec. 20115SMX 86H1264 June 2012

5SMX 86H1274 June 20125SMX 86K1264 June 20125SMX 86K1274 June 20125SMX 86L1264 June 20125SMX 86L1274 June 20125SMX 86M1274 June 20125SMY 12N4500 Dec. 20115SMY 12N4510 Dec. 20115SMY 12M6500 Dec. 2011

Bipolar Obsolete productsMaterial/Replaced by5SHY 30L6010 5SHY 42L65005SHY 35L4511 5SHY 40L45115STP 12N8500 5STP 20N8500– Avalanche diodes stud type 5SDA

09P**#3, 08P**#4, 07P**#5, 06P**#6 and 05P**#7 where ** is the VRRM in hV and # is the version. No replacement parts are available.

ABB news 1|11

Section 6

IGCT devices –Status and short term outlook

Cross-section of HPT GCT wafer

ABB Semiconductors’ IGCT has been a very successful product. Since its intro-duction in 1997, the IGCT technology has been continuously improved and further developed. Below is a short description of the tar-get markets for the current generation of IGCTs as well as an insight into further improvements within the next year. The Short Form Catalogue 2012 will contain the following IGCT products:– 4.5 kV; Ideal for 3- and 5-level Voltage Source MVA Inverters, Standard & HPT products in a high power and in a fast version, available with Integrated anti-parallel diode (RC-IGCT) and as Asymmetric device– 5.5 kV; Ideal for 3- and 5-level Voltage Source MVA Inverters, HPT product, available with Integrated anti-parallel diode (RC-IGCT) and as Asym-metric device– 6.5 kV; Ideal for 2-level Traction Con-verters, Traction Supply Converters and DC breakers, HPT Asymmetric device

The successful development of the HPT IGCT is a breakthrough in bipo-lar switch technology. The HPT IGCT device allows very high currents to be switched off under harsh conditions in a controlled and predictable way with low switching losses. The picture above illustrates the HPT functionality, showing a cross section of an HPT GCT wafer.

Visible on the top of the wafer are several metallization levels (blue) serving as contacts for both the ca-thode and gate.During turn-off, electrons with negative polarity are injected into the GCT from the gate to negate the current carriers that have opposite polarity (i.e. posi-tive). The red layer, which is formed by multiple processing steps of the GCT including implantation and diffusion, guide the current carriers away from the cathode and towards the gate. This oc-curs because the “corrugation” changes the electrical field and diverts the posi-tive charges away from the cathode. HPT IGCTs can switch off much higher current than is possible with a standard IGCT device. With the 4.5 kV, L size HPT IGCT (5SHY 55L4500), it is safe to switch from 5000A to 2800 VDC over the operating range of temperatures from 0°C to 125°C. The maximum on-state current per HPT IGCT is 1500 -2000A. Thanks to these high current ratings, paralleling of IGCT devices is unnecessary to achieve converter power ratings of more than 20 MVA. Further development and optimization will allow for ~6000A turn-off capability at an operating temperature up to 140°C. The next generation of HPT, called HPT+, will be able to control the device leak-age current at high temperatures by im-proved passivation schemes, improved process control during diffusion and improved packaging to further lower the thermal resistance between the GCT wafer and the heat sink.

Publications Calendar

Short Form Catalogue 2012, to be released in January 2012

Updated Flyers for HiPak, IGCT and FRD, to be released at PCIM, May 2012

New Flyer for Industrial Presspack IGBT, to be released at PCIM, May 2012

For more information please contact: ABB Switzerland Ltd, SemiconductorsFabrikstrasse 35600 Lenzburg, SwitzerlandPhone: +41 58 586 1419Fax: +41 58 586 1310E-Mail: abbsem@ch.abb.comm.abb.com www.abb.com/semiconductors

Note:We reserve the right to make technical changes or modify the contents of this document withoutr prior notice. With regard to purchase orders, the agreed particulars shall prevail. ABB AG does not accept any responsibility whatsoever for potential errors or possible lack of information in this document.We reserve all rights in this document and in the subject matter and illustrations contained therein. Any reproduction, disclosure to third parties or utilization of its contents – in whole or in parts – is forbidden without prior written consent of ABB AG.Copyright© 2010 ABBAll rights reserved