Nanoscale Electrochemical Switches Dr. James G. Kushmerick OFFON.
-
Upload
ruby-pitts -
Category
Documents
-
view
214 -
download
0
Transcript of Nanoscale Electrochemical Switches Dr. James G. Kushmerick OFFON.
Nanoscale Electrochemical Switches
OFF ON
1. OFF state – molecular tunnel junction
2. Vthreshold reached. Ag+ filament bridges gap. Switches ON.
3. Remains in ON state until polarity switched.
4. At 0 V, device is returned to OFF state.
Device can be rapidly cycled between ON and OFF
Greater than 1 million switch cycles achieved
Fastest monolayer switch to date = 13 kHz
On-Off Ratio > 105
Device area ~ 25 nm2
~ 2 nm
CMOS Scaling
1970 1980 1990 2000 2010 2020
Min
imu
m F
eatu
re S
ize
(m
)
0.01
0.1
1.0
10
65 nm node
(2005)…drives Si technology towards fundamental limits
Courtesy INTEL
Courtesy of IntelRock’s Law: the cost of a semiconductor chip fabrication plant doubles every four years
Advantages• Ease of fabrication• Huge On-Off Ratio (>105)• High success rate for device fabrication (>90%)• Small Device Area (~25 nm2)
Challenges/Opportunities• Slow Switch Speed (~10 kHz) defines possible
applications (e.g. memory arrays and FPGA)• Not easily integrated into CMOS fab-line, but no fab-line
needed
Technology Applications
• Nanoscale Electrical Devices
– Memory Arrays
– Field-Programmable Gate Arrays
Commercial Applications
• Memory and logic for cell phone and other portable electronic devices
Future Work
• Optimization of switch characteristics– Increase switch speed– Increase # of cycles till failure
• Fabricate nanoscale memory devices
Collaboration Opportunities
• Future work would best be done in collaboration between NIST and an interested industrial partner.
• Intellectual Property:
“Self-Assembled Monolayer Based Silver Switches ”
Provisional Patent Application filed 9/10/2007
Serial # 11/852,811
Contact Information
• For further information contact:– James G. Kushmerick
100 Bureau Drive Stop 8372Gaithersburg, MD 20899-8372
Tel: (301) 975-5697email: [email protected]