Nanometer Ceria Slurries for Front-End CMP Applications ... · 3/8/2015 · CSX slurry reduces...

Nanometer Ceria Slurries for Front-End CMP Applications, Extendable to 65nm Technology Node and Beyond

Nanometer Ceria Slurries for Front-End CMP Applications, Extendable to 65nm Technology Node and BeyondCass Shang, Robert Small and Raymond Jin*

DuPont Electronic Technologies, 2520 Barrington Ct., Hayward, CA 94545

*Adcon Lab, Inc., 6110 Running Springs Rd., San Jose, CA 95135, www.adconlab.com

(408)531-9187 (phone), (408)532-8886 (fax), [email protected] (e-mail)

An oral presentation at 8th Annual International CMP Conference, Sept. 29, 2003, San Jose, CA., USA

Copyright © 2003 E.I. du Pont de Nemours and Company and Adcon Lab, Inc.. All rights reserved.

www.dupont.com/ekctechnology www.adconlab.com

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Adcon NanoCeriaTM SeriesA family of nanometer colloidal ceria suspension products

Adcon NanoCeriaTM SeriesA family of nanometer colloidal ceria suspension products

To eliminate defects and micro-scratches and improve planarity in different CMP applications for 65nm technology and beyond

To eliminate defects and micro-scratches and improve planarity in different CMP applications for 65nm technology and beyond

§Nanometer ceria abrasives in their stable concentrated suspensions with different controlled shapes (including round shapes), customer-specified solid content, customer-desired pH and chemistry, customer-specified size or size distribution, ranging from 10nm to 120nm

§Commercially available with new manufacturing plant design capacity of 20,000 lbs solid equivalent a year and already supplied to three multi-billion $ global companies

§Technology and product R&D, engineering, manufacturing, QC/QA, marketing, sales, and customer support are managed by experienced and western trained semiconductor industry professionals and supported by well-established technology organizations and Chinese government, whomakes regulatory policies over the majority of rare earth raw materials on today’s world market



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Adcon NanoCeriaTM-30 TEM, Average 30nmAdcon NanoCeriaTM-30 TEM, Average 30nm

Designed to eliminate defects and micro-scratches and improve planarity in direct STI CMP application

Designed to eliminate defects and micro-scratches and improve planarity in direct STI CMP application



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Defect Reduction and Planarity Improvement by Controlling Ceria-Wafer Interaction Forces

Defect Reduction and Planarity Improvement by Controlling Ceria-Wafer Interaction Forces

§Forces based on DLVO theory and beyond:

• Electrical interaction and intra-action between nanometer ceria particles of controllable shape and size distribution and the dielectric films being removed

• Chemical or other specific interaction and intra-action between nanometer ceria particles and the dielectric films being removed, as induced or impacted by additives

• Any interaction and intra-action forces (including van der Waal’s, steric hindrance) under specific rheologicaland tribological conditions with specific pad, conditioning disk, and CMP platform/process

Adcon NanoCeriaTM

Products used for optimizing CMP performance at 65nm technologyAdcon NanoCeriaTM

Products used for optimizing CMP performance at 65nm technology

-90

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Additive X, %

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Delta Zeta-Potential (mV)Parameter Y



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Polysilicon CMP ApplicationsPolysilicon CMP Applications



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Poly CMP –Damascene Applications

Oxide film formation (1)

Pattern and etch to form plug or trench (2)

Deposit polysilicon (3)

Remove Polysilicon (4)

§ RIE?

§ RIE + Oxide CMP

§ CMP + RIE

§ Poly CMP

Which process provides a better control of recess and stop layer erosion ?

Copyright © Adcon Lab Inc., All rights reserved.



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Poly CMP –Planarity Applications

DuPont

CSX Slurries

Adcon NanoCeriaTM

Products

Adcon NanoCeriaTM slurry as a solution for challenging technical problems for CMP engineers in advanced IC fabs

Adcon NanoCeriaTM slurry as a solution for challenging technical problems for CMP engineers in advanced IC fabs




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Poly CMP for Crown CapacitorsPoly CMP for Crown Capacitors

A enabling technology for Advanced DRAMA enabling technology for Advanced DRAM




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Schematic Diagram of Self Aligned Metal Gate a Process Flow

R. Jin et al., 1998. Semicon Taiwan, SEMI IC Seminar Proceedings



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Dual Poly Damascene for Poly Gate and Self Aligned Poly Contact

R. Jin et al., 2000. CMP MIC Proceedings



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Improved Planarity by Nanometer Ceria SlurriesCSX series based on Adcon NanoCeriaTM series for both planarity (without

polishing stop layer) and damascene (with polishing stop layer) applications

Improved Planarity by Nanometer Ceria SlurriesCSX series based on Adcon NanoCeriaTM series for both planarity (without

polishing stop layer) and damascene (with polishing stop layer) applications

Results were achieved when polishing was stopped in polysilicon, i.e., without a polishing stop layer.

Remaining Step Height at 50% density area, Å (improvement over baseline)

Remaining Step Height at 100um features, Å (improvement over baseline)

Current baseline (silica based), In literature & volume production >600 >800

High removal rate, CSX-01 <200 (3x) <250 (3x)

High planarity & low rate, CSX-02 <150 (4x) <100 (8x)

High planarity & low rate, CSX-03 <50 (11x) <100 (8x)

High planarity & high rate, CSX-08 <80 (7x) <50 (16x)

CSX-Series Slurries provide >3x planarity improvementCSX-Series Slurries provide >3x planarity improvement



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Pitting Problems with a Current Leading Ceria Slurry in the IC Fab

Pitting Problems with a Current Leading Ceria Slurry in the IC Fab

Current ceria slurry formulation using micro-ceria causes poly pittingCurrent ceria slurry formulation using micro-ceria causes poly pitting



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CSX Slurries Based on Adcon NanoCeriaTM

Products to Solve Pitting Problems CSX Slurries Based on Adcon NanoCeriaTM

Products to Solve Pitting Problems

New formulation and Adcon NanoCeriaTM engineering prevent pittingNew formulation and Adcon NanoCeriaTM engineering prevent pitting

Wafer #4

Wafer #19

After removing ~4kA poly using MIT 864 mask



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Direct STI CMP ApplicationsDirect STI CMP Applications



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Why Direct STI CMP & Adcon NanoCeriaTM?Why Direct STI CMP & Adcon NanoCeriaTM?

•Ceria based CMP is the best direct STI solution

•Current micro-ceria causes µ-scratches and creates scares in IC fab

•Adcon NanoCeriaTM eliminates µ-scratches and extends IC technologies




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CSX slurry reduces direct STI CMP defects and µ-scratches @0.18 µm by >40%CSX slurry reduces direct STI CMP defects and µ-scratches @0.18 µm by >40%

Reduction of Direct STI CMP Defects and µ-Scratches by Adcon NanoCeriaTM Slurry Reduction of Direct STI CMP Defects and µ-Scratches by Adcon NanoCeriaTM Slurry

Without buff

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Current leading directSTI CMP ceria slurry

CSX slurry usingAdcon NanoCeria

µ

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30nm

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µ

800nm

30nm

TEM Copyright © Adcon Lab Inc., All rights reserved.



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SummarySummary

§CSX slurries using Adcon NanoCeriaTM

products improved polysilicon CMP planarity performance by >3x

§CSX slurries solve front-end CMP defect problems, including pitting, particles and micro-scratches in polysilicon and direct STI CMP applications

§Significantly improved defect performance and planarity (<100A remaining step height without polish stop layer) makes CSX slurry extendable to 65nm technology

Nanometer Ceria Slurries for Front-End CMP Applications ... · 3/8/2015 · CSX slurry reduces...

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