Nanofabrication Techniques - Magnetismmagnetism.eu/esm/2005-constanta/slides/mailly-slides.pdf ·...
Transcript of Nanofabrication Techniques - Magnetismmagnetism.eu/esm/2005-constanta/slides/mailly-slides.pdf ·...
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Nanofabrication Techniques
Dominique MaillyLaboratoire de Photonique et de Nanostructures
Marcoussis
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Summary
• Introduction• Optical Lithography• X-ray lithography• E-beam Lithography• Ion beam Lithography• Near field Lithography• Soft and Imprint Lithography• Transfert techniques
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Typical Flowchart for fabrication
substrat Resistspinning
exposure
lift-off
Metal deposition Electrolyticgrowth
etching
development
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lithographyCrucial step which will fix the size of the pattern
Lentille
projection1:5 à 1:20
Focused beam writing
g
contact1:1
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Moore Law
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Resist and contrast
Contrairely to photography one does not want any gray scaleThe highest contrast is the best.
negative resist positive resist
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Ideal transfert
Real transfert
Light intensityon resist
gap b b b
mask
resistwafere
Optical lithography by contact or proximity
• resolution limited by diffraction:
•gap minimum=resist thickness•Substrats flatness•Resist damage•Mask damage•mask1:1e.g. g=10µm, l=400nm t=10µm
Typically in a lab one can achieve 0.5µmand reach 0.2µm with conformal masks
λ >200nm for mask transparency
Simple and economical this is the popular lithographic tool for labs and R&D for intermediate resolution
gt λ=
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Projection Lithography• Resolution limited by diffraction:
N.A. numerical aperturek technological parameter process parameter
1:5 to 1:20
.. ANkR λ=
DOF∝N.A.-2
UV light
NA=n sini i
lens aperture
theoretical k=0.61 (Rayleigh criteria)
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0.49
0.46
O.6
0.65
0.8
kresolutionN.A.λYear
0.090µm0.6193nm2003
0.18µm0.63248nm1999
0.3µm0.5248nm1995
0.5µm0.48365nm1990
1.25µm0.28436nm1980
k<kRayleigh top imaging techniqueand phase shift mask
Evolution of projection lithography
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Top imaging technique and phase shift mask
k : 0.61 0.4
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193nm lithography
10M€!
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Refractive mask
Reflection mask
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EUV Lithography
EUV are absorbed by allmaterial and gases:need to be in vacuum
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At the moment the situation is not clear between157nm/immersion lens and EUV
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X-ray lithographyChoice of wave length:
diffraction t=(λg)1/2
mean free path of photo-electron:l∝λ−αmask transparencyabsorber efficiency
0.8nm < λ < 1.6nm
Not sensitive to dust particleslarge process lattitude
diverging source enlargment and shadow
Parallel source synchrotron light
X photon
Photo-electronextension
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X-ray maskno X –ray optics mask 1:1
absorber:Au, W, Ta0.4µmmembrane: Si3N4, SiC2µmStand Si
Need to control stress of membrane for flatnessNo stress in absorber Good mechanical stability
The major difficulty of X-ray lithography
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Example of X-ray lithography
30 nm lines onPMMA 20 nm dots on PMMA
X-ray lithography versus EUV lithography ??????
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3D X-ray lithography
Photonic crystal
Multiple exposures with 3 different angles
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Electron beam lithography
• Since a long time one knows how to focus electrons beam spot < 10nm
• Very small wavelength: no diffraction limitation
• Direct writing: maskless• sequential writing: small throughput• resolution : depends on resist, one
can reproduce the spot size i.e. 1nm
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electron-resist interaction
mm
mmm
m m
mm
mm
mmm m
m
Typical energy for breaking a bond: 10eV
Typical energy of the beam : several 10keV(Problem of aberration at low energy)
non soluble soluble
organic resist (PMMA)
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Monte Carlo Simulation to study energy lost
Forward scattering
Substrat backscattering
Spreading of the beam , lost of resolution
Energy far from the impact of the beam, proximity effects
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E(r)
r
22
expexp)( ⎟⎠⎞
⎜⎝⎛−+⎟
⎠⎞
⎜⎝⎛−=
barbrarE ββ
43-12013-6090.045020.0820
βr (µm)βa(µm)Tension kV
Substrat Si
βr
βa
βa forward scattering:Essentially depends on the resist and thevoltageβr backscattering:Depends on the voltage and the substrat
Double Gaussian model
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How to beat proximity effect
• Vary the dose depending on the pattern• Use high energy: dilute proximity effect
on a large area• Use very small energy (STM) (but
forward scattering)• Use resist sensitive to high energy:
inorganic resists• Write on membranes
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Proximity effects
Dose depends on the patternIntra proximity
Dose depends on the surrounding of the pattern
D=E(1+b)
Real dose as exposed dose proximity effect
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Software for proximity effect correction
Commercial software exist (very expensive)Correction may needs negative doses at some points!
It is very difficult to produce arrays of line with a very fine pitch
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200kV e-beam lithography on PMMA
Line <10nmGranular gold lift-off
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•Multilayer techniques
resolution resistlayer
stoplayer
absorber resist(low Z)
Substrat (high Z)
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Resolution of organic Resists
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Inorganic resistsensitive to high energy
Diffusion pump oil Polymerisation under the beamSize few nm (hard to remove!)
Other inorganic resist: Al2O3, NaCl, AlF3, …problems: very thin resist :no lift-off
very high doses ≈ C/cm2 i.e . 104s/µm!
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AlF3 at 200kV
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The e-beam writer(example of the LEICA 5000)
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<100> W Crystal
ZrO Reservoir
Polycrystalline tungstenheating filament
Schottky Emitter Tip
Brightness >>LaB6 cathode Spot size<5nm at 500pA
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Scanning Techniques for E-Beam Lithography
1. Raster ScanThe beam deflection system scans a fixed sized area whilst the beam is switched on and off to expose the local areas where shapes are required.
2. VectorscanThe blanked beam is deflected to the lower-left hand corner of a shape. The beam is unblanked and the required shape area then scanned. The beam is again blanked and deflected to the next required shape.
Stage Movement Limits
3. Stage Scan/ Static Beam
The stage is moved in the path required to create the lithographic shapes while the beam remains undeflected
Beam Scan Area Beam Scan Area
Shaped beam for mask making machine
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Vector Scan of Rectangle Shape
Un-blank beamand start scan here
Stop scan andblank beam
Beam Step Size
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Exposure Scan Strategy
Main field double-leverscan coils deflect beamto start position of each shape.
Final lens
Main field
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Exposure Scan StrategyThe Trapezium Deflector scans the required lithography shape at the position within the Main Field set by the Mainfielddeflector coils.
Trapezium shape maximum size(depends on EHT)
Final lens
Main field
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Trapezium Field• The main reason for the Trapezium deflection system is speed.
• It is not possible to deflect the main beam with 25Mhz stepping frequency. • Large current changes in inductive deflection coils require long settling times
• To achieve very fast deflection• Use a coil with low self-inductance• Limit the range of deflection currents
• Disadvantages:• The deflection range is limited (12.8µm max but depends on EHT).• Large shapes require fracturing into Trap deflection range sizes.• Advantages:• High speed deflection possible• Exposure lost time for settling greatly reduced
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Writing Strategy
Substrate on the Holder, on the Stage
0,0
Shape positioning Resolution =32768
Field Size+ X
Fields/Blocks positioned by stage movement
+ Y
Trapezia - Positioned by main deflection - Written by Trapezia Scan
Field BoundaryBlock Boundary
Beam Step Size interval defines Trapezia size
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Basic Deflection System
Pattern
Generator
Clock
Main X
Main Y
Trap XTrap Y
BeamBlanking
TrapeziumGenerator
Computer
Def
lect
ion
Coi
ls
BeamBlanker
Determine the dose
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Effects of deflection on the Beam
Final Aperture
Substrate Surface
Focal Plain
the pattern has to be divided into field
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The Laser emits a second beam for each axis which is polarized at 900 to the first.
This beam travels through a different path as shown. It is reflected back to the Receiver by the Remote Interferometer optics and does not “see” the Stage.
This beam measures any changes of path length between the Laser and the Remote Interferometer units.
The measurements of the two beams are combined and the resultant signal output provides an accurate measurement of the position of the stage relative to the remote interferometer units.
Hence changes of room temperature affecting the path length in the Laser Optics Box do not affect the accuracy of the measurement of the Stage position.
Accuracy about 2nm
LaserBeam Bender
50% Beam Splitter
Y AxisReceiver
X AxisReceiver
Beam Bender
StageY Axis Remote Interferometer
X Axis Remote Interferometer
Stage Y Axis
Stag
e X A
xis
X Axis Mirror
Y Ax
is Mi
rror
Laser Optics Box
Main ChamberAirlock
Laser Interferometer Optics
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Elements of Beam Error Feedback (Pull-in)
R
M
RequiredStage Position
MechanicalStagePosition
R- M BEF
DAC
CalibrationScale
andRotation
Amplifier
E-Beam
DeflectionCoils
(R - M)
Stage
LaserInterferometer
Stage Position Values
MechanicalStage position
Required Destination
Stage M
irrors
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e-beam lithography:
•Highest resolution
•Low process - not for industrial purpose (for all processes)
•Intermediate cost :• 150k€ for SEM based equipment• 3M€ for e-beam writer
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Ion beam lithography
• Revival of ions beam – spot size < 10nm• Ions are rapidely absorbed – no proximity
effect• Small doses• Tridimensionnal structures• Direct writing (without resist) through
etching or implantation.
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Ion trajectories
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10 nm
LPN Marcoussis
30kV Gallium ions
Holes in a Si3N4 membrane
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Ion beam lithography on AlF3 resist30kV Ga ion
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3D lithography on organo-metallic gold composite
Dimensions : 30 nm wide, 20 nm height : 1.5 µm long.(Ga ions , energy 30 keV, initial thickness 50nm)
Résist:Au55(PPh3)12Cl6
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Local FIB induced mixing Local FIB induced mixing -- Thin magnetic films patterningThin magnetic films patterning
Magneto-optical image of magnetic domains defined between irradiated lines(Ga+ ions, 30 keV, 5×1015 ions/cm2 ). ⇒⇒ Arrays of stable magnetic dots 1500 nm, 750 nm, 300 nm, 50 nm
FIB probe
Co (1,4 nm)Pt (4,5 nm)
Pattern
Transparent alumina substratePt (3,4 nm)
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Tridimensional etching
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Near field lithography
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Near field lithography through local electrochemistryexample of gold
a) Surface water condensationb) Monolayer of oxydize gold
c) Exchange process d) Dissolution of gold atoms
oxygen atoms
gold atoms
H2O
Gold surface
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examples
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Electrical pulseMechanical pressure threshold
Below threshold Observation/alignment
Near field scheme
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Local CVD deposition
Rh RhCl
ClPF3
PF3
PF3
PF3
depassivation
deposit
GPEC Marseille100nm
low pressureone pulse → one atome
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ETH ZürichCRTBT
Example of useful structures
Anodization of GaAs Anodization of Nb
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Use carbon nanotube to improve theresolution
Pb vibrations needs short tube 0.2µm LEPES Grenoble
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Slow process parallel set-up
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Thermal lithography
Milliped project IBM Zürich
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Dip pen lithography
Application to DNA Chip resolution =40nmNorthwestern Univ
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Nano-imprint
resist
1.temp +pressure 50Bars
3. Remove mold(tricky!)
4. Etch of residualresist
mold
substrate
Slow process, Need mask at 1/1 scale i.e. e-beam lithographyResolution demonstrated down to 10nm. Very chip!
2. cooling
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examples
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UV assisted imprint
Quartz mold
substrate
UV hardening of the resist
Much faster , still problem for alignment, commercial systems now
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P = 400 nm
PDMS
ink
thiols
Nano-stamp
•Use of molecular adhesion
•Example : thiol group on gold
Gold Si
etch
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Technique Resolution Use Remarks
Optical lithography
contact 0.25µm Labs and R&D Economical
proximity 2µm Labs and R&D Economical but weakresolution
projection 80nm Industrial Expensive but withconstant progress
EUV <50nm Industrial May be the next tehniquefor 2005
Electron lithography 1nmLabs andR&D
Fabrication of opticalmasks
Technique without maskbest resolution
Lithographie ionique 8nm Labs and R&DBetter for etchig than
lithography (diagnostic)
Near field lithography Atom10nm
Labs Economical, very slowspecific
Nanoimprint 10nm Labs and industry?Economical, fast
Alignment problemsmask 1 :1
Conclusion on lithography techniques
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Transfert techniques
• Wet etching• Ion Beam Etching• Reactive Ion Etching• Reactive Ion Beam Etching• Dense plasma
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Wet etchingisotrope wet etching•Simple•Fast•Do not respect the design rule
You may think to use under etching to reduce thee size. Difficult to control because of surface state: strong etching (not sensitive to surface state) too fastWeak etching slow but too sensitive to surface state
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Anisotropic wet etching
Use anisotropic etch rate with crystal faceStill some under-etchUse to produce nice features over-growth in V-grovesCan be mixted with stop layer
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Ion Beam EtchingIBE
gas
•Use the impact of impining ions.•Purely physical• Sputtering rate T ZU
ET∝
U binding energy of materialZ atomic number of mateerialE ion energy x coeff (angle)
accelerated ions
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•Quite slow •No selectivity•Re-deposition•Trenching•damage
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Reactive ion etching: RIE
rf
plasma
C
Autopolarisation few100VChemically active ions
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Anisotropy achievement
passivation gas
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Avantages of RIE
Fast proceessSelectivityAnisotropyNo redeposition
Use of passivation layer
problems of RIESensitive to pollutionEnergy and pressure are linked
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Reactive Ion Beam Ething:RIBE
Same as IBE but withchemically active ionsAllows to separate thephysical/chemicalactionImpressive aspect ratio
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Examples RIE
AlAs/GaAs miropillar
1,94µmby 6,25µm
7.5 µm
Depth limited to 1.2mmFor 0.4mm diameter holes
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Example RIBE
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Electron Cyclotron Resonance and Inductive Coupled Plasma
High density plasma (fast) with low energy (damage)Independant control of energy/density
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Top down and bottom up?
Both techniques tend to the same dimension
Future of nanotechnology will be certainly a mixing of thesetechniques Addressing of individual macromoleculesStructuration of substrat
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0 20000 40000 60000 8000014000
15000
16000
17000
18000
19000
T=30 mK
Magnetic field (Gauss)
Carbone nanotube and e-beam lithography
LPN-Marcoussis
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CVD growth of Carbone Nanotube on structured catalyst
LEPES Grenoble
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FIB structurated substart and gold cluster deposition(coll. DMP Lyon - LPN)
Cluster deposition on structurated substrat