N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE ...July 2013 DocID024040 Rev 2 1/19...

This is information on a product in full production.

July 2013 DocID024040 Rev 2 1/19

STH310N10F7-2, STH310N10F7-6

N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™

Power MOSFET in H2PAK-2 and H

2PAK-6 packages

Datasheet - production data

Figure 1. Internal schematic diagram

Features

• Ultra low on-resistance

• 100% avalanche tested

Applications• Switching applications

DescriptionThese devices utilize the 7

th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure. The resulting Power

MOSFET exhibits the lowest RDS(on)

in all

packages.

1

TAB

32

H PAK-22

H PAK-62

1

TAB

7

Order codes VDS RDS(on) max. ID

STH310N10F7-2

100 V 2.3 mΩ 180 A

STH310N10F7-6

Table 1. Device summary

Order codes Marking Package Packaging

STH310N10F7-2

310N10F7

H2PAK-2

Tape and reel

STH310N10F7-6 H2PAK-6

www.st.com

http://www.st.com

Contents STH310N10F7-2, STH310N10F7-6

2/19 DocID024040 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

DocID024040 Rev 2 3/19

STH310N10F7-2, STH310N10F7-6 Electrical ratings

19

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 100 V

VGS Gate-source voltage ± 20 V

ID

(1)

1. Current limited by package.

Drain current (continuous) at TC

= 25°C 180 A

ID

(1)Drain current (continuous) at T

C=100°C 120 A

IDM

(2)

2. Pulse width limited by safe operating area.

Drain current (pulsed) 720 A

PTOT Total dissipation at T

C = 25°C 315 W

Derating factor 2.1 W/°C

EAS

(3)

3. Starting TJ=25°C, I

D=60 A, V

DD=50 V

Single pulse avalanche energy

(TJ = 25 °C, L=0.55 mH, I

as=65 A )

1 J

Tj

Tstg

Operating junction temperature

storage temperature

- 55 to 175 °C

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.48 °C/W

Rthj-pcb

(1)

1. When mounted on 1 inch² FR-4 board, 2oz Cu

Thermal resistance junction-pcb max 35 °C/W

Electrical characteristics STH310N10F7-2, STH310N10F7-6

4/19 DocID024040 Rev 2

2 Electrical characteristics

(TCASE

= 25 °C unless otherwise specified).

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS

= 0)

ID

= 250 μA 100 V

IDSS

Zero gate voltage drain

current (VGS

= 0)

VDS

= 100 V 1 μA

VDS

= 100 V, TC

= 125°C 100 μA

IGSS

Gate body leakage current

(VDS

= 0)

VGS

= 20 V 100 nA

VGS(th) Gate threshold voltage V

DS= V

GS, I

D = 250 μA 2.5 3.5 4.5 V

RDS(on)

Static drain-source on-

resistance

VGS

= 10 V, ID

= 60 A 1.9 2.3 mΩ

Table 5. Dynamic


Ciss Input capacitance

VDS

= 25 V, f = 1 MHz,

VGS

= 0

- 12800 - pF

Coss Output capacitance - 3500 - pF

Crss

Reverse transfer

capacitance

- 170 - pF

Qg Total gate charge

VDD

= 50 V, ID

= 180 A,

VGS

= 10 V

(see Figure 14)

- 180 - nC

Qgs Gate-source charge - 78 - nC

Qgd Gate-drain charge - 34 - nC

Table 6. Switching times


td(on) Turn-on delay time

VDD

= 50 V, ID

= 90 A

RG

= 4.7 Ω VGS

= 10 V

(see Figure 13,

Figure 18)

- 62 - ns

tr Rise time - 108 - ns

td(off) Turn-off delay time - 148 - ns

tf Fall time - 40 - ns

DocID024040 Rev 2 5/19

STH310N10F7-2, STH310N10F7-6 Electrical characteristics

19

Table 7. Source drain diode


ISD Source-drain current - 180 A

ISDM

(1)

1. Pulse width limited by safe operating area.

Source-drain current

(pulsed)

- 720 A

VSD

(2)

2. Pulse duration = 300μs, duty cycle 1.5%

Forward on voltage ISD

=60 A, VGS

=0 - 1.5 V

trr Reverse recovery time I

SD=180 A,

di/dt = 100 A/μs,

VDD

=80 V, Tj=150°C

(see Figure 15)

- 85 ns

Qrr Reverse recovery charge - 200 nC

IRRM Reverse recovery current - 4.7 A

Electrical characteristics STH310N10F7-2, STH310N10F7-6

6/19 DocID024040 Rev 2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

ID

100

10

1

0.10.1 1 VDS(V)10

(A)

Operation in

this

area is

Limite

d by max R

DS(on)

100µs

1ms

10ms

Tj=175°CTc=25°C

Sinlgepulse

AM15430v1

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/τ

tp

τ

Single pulse

δ=0.5

280tok

5V

6V

7V

VGS=10VID

150

100

50

00 4 VDS(V)8

(A)

2 6

200

250

8V300

AM14734v1ID

150

100

50

00 4 VGS(V)8

(A)

2 6

200

250

VDS = 2V

300

350

1 3 5 7

AM14735v1

VGS

6

4

2

00 Qg(nC)

(V)

100

8

50

10VDD=50VID=180A

150

AM14736v1RDS(on)

2.15

2.10

2.05

20 80 ID(A)

(mΩ)

40 120

2.20

2.25 VGS=10V

160

AM15431v1

DocID024040 Rev 2 7/19

STH310N10F7-2, STH310N10F7-6 Electrical characteristics

19

Figure 8. Normalized BVDSS vs temperature Figure 9. Capacitance variations

Figure 10. Source-drain diode forward characteristics

Figure 11. Normalized gate threshold voltage vs temperature

Figure 12. Normalized on-resistance vs temperature

0-25 7525-75 125

BVDSS

TJ(°C)

(norm)

0.94

0.96

0.98

1.00

1.02

1.04ID = 1mA

AM14742v1 C

6000

4000

2000

00 40 VDS(V)

(pF)

20

8000

60

Ciss

CossCrss

10000

14000

80 100

12000

AM14738v1

TJ=-50°C

TJ=150°C

TJ=25°C

VSD

0 40 ISD(A)

(V)

16080 1200.45

0.55

0.65

0.75

0.85

0.95

1.05

AM14739v1 VGS(th)

0.90

0.80

0.70

0.60TJ(°C)

(norm)

1.0

0-25 7525-75 125

ID = 250µA

AM14741v1

RDS(on)

1.6

1.2

0.8

0.40 TJ(°C)

(norm)

-25 7525-75 125

2.0ID = 60A

AM14740v1

Test circuits STH310N10F7-2, STH310N10F7-6

8/19 DocID024040 Rev 2

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

DocID024040 Rev 2 9/19

STH310N10F7-2, STH310N10F7-6 Package mechanical data

19

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK®

is an ST trademark.

http://www.st.com

Package mechanical data STH310N10F7-2, STH310N10F7-6

10/19 DocID024040 Rev 2

Table 8. H²PAK-2 mechanical data

Dim.mm

Min. Typ. Max.

A 4.30

-

4.80

A1 0.03 0.20

C 1.17 1.37

e 4.98 5.18

E 0.50 0.90

F 0.78 0.85

H 10.00 10.40

H1 7.40 7.80

L 15.30 15.80

L1 1.27 1.40

L2 4.93 5.23

L3 6.85 7.25

L4 1.5 1.7

M 2.6 2.9

R 0.20 0.60

V 0° 8°

DocID024040 Rev 2 11/19


19

Figure 19. H²PAK-2 drawing

8159712_C8159712_C


12/19 DocID024040 Rev 2

Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)

8159712_C

DocID024040 Rev 2 13/19


19

Table 9. H²PAK-6 mechanical data

Dim.mm

Min. Typ. Max.

A 4.30

-

4.80

A1 0.03 0.20

C 1.17 1.37

e 2.34 2.74

e1 4.88 5.28

e2 7.42 7.82

E 0.45 0.60

F 0.50 0.70

H 10.00 10.40

H1 7.40 7.80

L 14.75 15.25

L1 1.27 1.40

L2 4.35 4.95

L3 6.85 7.25

L4 1.5 1.75

M 1.90 2.50

R 0.20 0.60

V 0° 8°


14/19 DocID024040 Rev 2

Figure 21. H²PAK-6 drawing

8159693_Rev_E

DocID024040 Rev 2 15/19


19

Figure 22. H²PAK-6 recommended footprint (dimensions are in mm)

footprint_Rev_E

Packaging mechanical data STH310N10F7-2, STH310N10F7-6

16/19 DocID024040 Rev 2

5 Packaging mechanical data

Table 10. Tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base qty 1000

P2 1.9 2.1 Bulk qty 1000

R 50

T 0.25 0.35

W 23.7 24.3

DocID024040 Rev 2 17/19

STH310N10F7-2, STH310N10F7-6 Packaging mechanical data

19

Figure 23. Tape

Figure 24. Reel

P1A0 D1

P0

F

W

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

Top covertape

AM08852v2

A

D

B

Full radius G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At sl ot location

T

Tape slot in core fortape start 25 mm min.width

AM08851v2

Revision history STH310N10F7-2, STH310N10F7-6

18/19 DocID024040 Rev 2

6 Revision history

Table 11. Document revision history

Date Revision Changes

10-Dec-2012 1

Initial release. Part number(s) previously included in datasheet

ID 022287

23-Jul-2013 2

– Modified: IDSS

and VGS(th)

values on Table 4.

– Added: EAS

value in Table 2– Document status promoted from preliminary data to

production data

– Minor text changes

DocID024040 Rev 2 19/19

STH310N10F7-2, STH310N10F7-6

19

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the

right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any

time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no

liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this

document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products

or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such

third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIEDWARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIEDWARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWSOF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USEIN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITHPRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS ORENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNEDFOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED INWRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THECORRESPONDING GOVERNMENTAL AGENCY.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void

any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any

liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2013 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE ...July 2013 DocID024040 Rev 2 1/19...

Documents

Transcript of N-channel 100 V, 1.9 m typ., 180 A STripFET VII DeepGATE ...July 2013 DocID024040 Rev 2 1/19...