MRSEC Highlights 2010

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  • 8/9/2019 MRSEC Highlights 2010


    Altering the physical performance of graphe

    Progressive electrochemicgraphene allows the contrlayers and leads to the moproperties of the graphenetransistors (FETs) fabricatgraphene showed improveFurthermore the controlled

    opens a route towards patstructures.

    Palanisamy Ramesh, Mikhail E. Itkis, Feihu Wang, Elena Bekyarova,University of California at Riverside

    Sponsored by NSF-MRSEC through contract DM

    Schematic (top) and a photograph (bottom)of FET devices fabricated with pristine and

    and electrooxidized graphene.

    Georgia Institute of Technology NSF MRSE

  • 8/9/2019 MRSEC Highlights 2010


    Designing a Graphene-Based B

    Ultra-sensitive biosensor applications includetesting blood sugar levels using sweat or saliva(as opposed to blood) or detecting minuteamounts of cancer-related chemical reporters inthe blood stream. Few, if any biosensors cancurrently achieve these goals within practicalconstraints.

    The key is to be able to detect and report thepresence of just a few molecules in a solution.The special electronic properties of graphenemake it an ideal candidate material for a novelbiosensor. We have designed an experimentalplatform combining electronic measurementswith microfluidics to systematically interrogategraphenes electronic sensitivity to biomolecular

    adsorption on graphenes surface versuschanging concentration.

    V. Kodali, M. Bedoya, T. Lamar, J. Scrimgeour, J. E. C

    School of Physics, Georgia Institute of Technolog

    Sponsored by NSF-MRSEC through contract DM

    Georgia Institute of Technology NSF MRSE


  • 8/9/2019 MRSEC Highlights 2010


    Graphene Growth Scales U



    Prof. Walt de Heer, Dr. Claire Berger and Prof. Edward

    School of Physics, Georgia Tech

    Sponsored by NSF-MRSEC through contract DM







    Georgia Institute of Technology NSF MRSE

    Use this space foranother picture,graphic or figure

  • 8/9/2019 MRSEC Highlights 2010


    Graphene Inks For Transparent E

    The development

    solutions is a keywhich will lead prfor flexible electrolow temperature provides an easy solvent based ink

    compatible with smethods.

    Samuel Graham

    Woodruff School of Mechanical Engineering

    Sponsored by NSF-MRSEC through contract DM

    The reduction of graphene oxide (top) tographene (bottom) while in solution wasmade possible using a combination ofheating and exposure to UV light. Itprovides a scalable way to produce inks.

    Georgia Institute of Technology NSF MRSE

  • 8/9/2019 MRSEC Highlights 2010


    F. Zaman*, M. Moseley, and J. D. MeindlSchool of Electrical and Computer Engineering, Georgia Ins

    M. Rubio-Roy*, Y. Hu, C. Berger, and W. A. de

    School of Physics, Georgia Institute of Techno* These authors contributed equally to this work.

    AlN, deposited by molecularbeam epitaxy and patternedby electron beam lithography,forms an effective cappinglayer for epitaxial graphenegrowth on C-face SiC.

    Graphitization in background

    Ar pressure of 100 Pa at1420oC eliminates any Sisublimation from regionscovered with AlN.

    Thickness:0.6 nm

    Measured sheet resistance:1.00.1 k/

    Electron density:1.080.06 x 1013 cm-2

    Hall mobility:58080 cm2/Vs

    Selective Epitaxial Graphene Growth on SiC

    Key SugrapSiC Grgrapsuchdete

    Optical microscope image ofraphene hall-bar with squareelimiting scanned area. b) 2Dand intensity of scanned area.haracteristic Raman signal forraphene only appears in non-apped areas.

    Sponsored by NSF-MRSEC through contract DMR-0820382

    Characterization ofSelective Epitaxial Graphene


  • 8/9/2019 MRSEC Highlights 2010


    Dong Sun, Zong-Kwei Wu, Charles Divin and TheodoreCenter for Ultrafast Optical Science, University of Mich

    Xuebin Li, Claire Berger, W. A. de Heer, and P. N. F

    School of Physics, Georgia Institute ofTechnology

    NSF Support: ECCS-0804908 and Georgia Tech MRSEC (DMR-082

    In high speed devices, electrons are accelerated to high energy bunderstand device performance, its important to know how thoscattering with each other and with the environment (the graphe

    Ultrafast Relaxation of Hot Dirac FEpitaxial Graphene

    70 fs

    E-E collision cooling

    short pulse can heat up the

    ectrons; these electronsimic those hot electrons ingh speed electronics devices.

    Cold Electron

    Hot Electron

    Those excited electrons

    transfer heat to each otherby collision, and reachequilibrium within 30 fs.

    Electrons release

    heat by collisionwith the lattice,until they lose alltheir heat.

    Very Hot ElectronT


    Interlayer Thermal Coupling of Hot Dirac Fermions in Epitaxial Graphene, APS Marc

  • 8/9/2019 MRSEC Highlights 2010


    Graphene Times ( provides the reader the latest news and research

    activities in an interactive and interconnected format. It is created, owned and operated by MikeSprinkle, a MRSEC student at Georgia Tech. Graphene Times currently pulls the newest

    graphene articles from, Nano Letters, ACS Nano, Journal of Physical Chemistry-B,Science, Science Express, Physical Review Letters, Physical Review B, Reviews of ModernPhysics, APS journals, Applied Physics Letters, Nature, Nature Materials, Nature Physics, SolidState Communications, and Carbon, in addition to news via Google. Notable features of the

    website currently include selective category lists (e.g., all papers, only arXiv preprints, onlyaccepted papers, news, blog entries, etc.), tags (with associated tag lists), search, readerratings/comments, related articles, and direct links to add items to bibliography/bookmarking

    sites such as Bibsonomy, CiteULike, Connotea, etc. Commentary will appear directly fromreaders on comment discussion pages and in a more structured ormat through blog entries. nthe average, the Graphene Times serves to about 4,500 to 5,000 unique visitors every month.