MRSEC Highlights 2010
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Altering the physical performance of graphe
Progressive electrochemicgraphene allows the contrlayers and leads to the moproperties of the graphenetransistors (FETs) fabricatgraphene showed improveFurthermore the controlled
opens a route towards patstructures.
Palanisamy Ramesh, Mikhail E. Itkis, Feihu Wang, Elena Bekyarova,University of California at Riverside
Sponsored by NSF-MRSEC through contract DM
Schematic (top) and a photograph (bottom)of FET devices fabricated with pristine and
and electrooxidized graphene.
Georgia Institute of Technology NSF MRSE
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Designing a Graphene-Based B
Ultra-sensitive biosensor applications includetesting blood sugar levels using sweat or saliva(as opposed to blood) or detecting minuteamounts of cancer-related chemical reporters inthe blood stream. Few, if any biosensors cancurrently achieve these goals within practicalconstraints.
The key is to be able to detect and report thepresence of just a few molecules in a solution.The special electronic properties of graphenemake it an ideal candidate material for a novelbiosensor. We have designed an experimentalplatform combining electronic measurementswith microfluidics to systematically interrogategraphenes electronic sensitivity to biomolecular
adsorption on graphenes surface versuschanging concentration.
V. Kodali, M. Bedoya, T. Lamar, J. Scrimgeour, J. E. C
School of Physics, Georgia Institute of Technolog
Sponsored by NSF-MRSEC through contract DM
Georgia Institute of Technology NSF MRSE
PDwithconneechaconrea
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Graphene Growth Scales U
Twonewfurnaceshavarenowproducingunfilmsupto1.7cmindnewproductionmethforgraphenegrownotobescaledupforindelectronics
fabrication
Prof. Walt de Heer, Dr. Claire Berger and Prof. Edward
School of Physics, Georgia Tech
Sponsored by NSF-MRSEC through contract DM
NewRF
furnace
design
produces
1.7cm
diameteruniformgraphenefilms.
Georgia Institute of Technology NSF MRSE
Use this space foranother picture,graphic or figure
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Graphene Inks For Transparent E
The development
solutions is a keywhich will lead prfor flexible electrolow temperature provides an easy solvent based ink
compatible with smethods.
Samuel Graham
Woodruff School of Mechanical Engineering
Sponsored by NSF-MRSEC through contract DM
The reduction of graphene oxide (top) tographene (bottom) while in solution wasmade possible using a combination ofheating and exposure to UV light. Itprovides a scalable way to produce inks.
Georgia Institute of Technology NSF MRSE
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F. Zaman*, M. Moseley, and J. D. MeindlSchool of Electrical and Computer Engineering, Georgia Ins
M. Rubio-Roy*, Y. Hu, C. Berger, and W. A. de
School of Physics, Georgia Institute of Techno* These authors contributed equally to this work.
AlN, deposited by molecularbeam epitaxy and patternedby electron beam lithography,forms an effective cappinglayer for epitaxial graphenegrowth on C-face SiC.
Graphitization in background
Ar pressure of 100 Pa at1420oC eliminates any Sisublimation from regionscovered with AlN.
Thickness:0.6 nm
Measured sheet resistance:1.00.1 k/
Electron density:1.080.06 x 1013 cm-2
Hall mobility:58080 cm2/Vs
Selective Epitaxial Graphene Growth on SiC
Key SugrapSiC Grgrapsuchdete
Optical microscope image ofraphene hall-bar with squareelimiting scanned area. b) 2Dand intensity of scanned area.haracteristic Raman signal forraphene only appears in non-apped areas.
Sponsored by NSF-MRSEC through contract DMR-0820382
Characterization ofSelective Epitaxial Graphene
NoncimagSmavisib
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Dong Sun, Zong-Kwei Wu, Charles Divin and TheodoreCenter for Ultrafast Optical Science, University of Mich
Xuebin Li, Claire Berger, W. A. de Heer, and P. N. F
School of Physics, Georgia Institute ofTechnology
NSF Support: ECCS-0804908 and Georgia Tech MRSEC (DMR-082
In high speed devices, electrons are accelerated to high energy bunderstand device performance, its important to know how thoscattering with each other and with the environment (the graphe
Ultrafast Relaxation of Hot Dirac FEpitaxial Graphene
70 fs
E-E collision cooling
short pulse can heat up the
ectrons; these electronsimic those hot electrons ingh speed electronics devices.
Cold Electron
Hot Electron
Those excited electrons
transfer heat to each otherby collision, and reachequilibrium within 30 fs.
Electrons release
heat by collisionwith the lattice,until they lose alltheir heat.
Very Hot ElectronT
Pump
Interlayer Thermal Coupling of Hot Dirac Fermions in Epitaxial Graphene, APS Marc
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Graphene Times (graphenetimes.com) provides the reader the latest news and research
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