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MOSFETs

2012

Product Catalog

Discrete Semiconductors

ROHM offers a wide selection of MOSFETs, including ultra-low ON-resistance products

utilizing micro-process technology, high efficiency/breakdown units for switching applications,

and high power components optimized for commercial/industrial systems.

MOSFETs

01 MOSFETs

02MOSFETs

Internal Circuitry Dimensions21 22

Contents

Lineup

General

9This lineup of high voltage (VDSS=45V, 60V) MOSFETs is ideal for

LED backlighting in LCD TVs and 24V-input motor drive circuits.

Power MOSFETs for LED Backlighting, Motor Drives, and DC/DC Converters

5Energy-saving series featuring low-voltage drive optimized

for portable devices.

ECOMOSTM Series for Portable Equipment

3

ROHM's new VML0806 series of bottom electrode MOSFETs features

the industry's smallest* package size - ideal for portable applications .

(*ROHM June 2012 survey)

Compact Bottom Electrode Type For Portable Devices

17PrestoMOSTM SeriesHigh Speed trr High Voltage MOSFETsThe industry's first MOSFETs that integrate a high-speed trr diode.

19Low Noise, High-Speed Switching, High Voltage Resistance MOSFETsProvides superior noise reduction during switching operation

compared with conventional high voltage resistance MOSFETs.

15This high voltage lineup (400-600V) reduces switching loss by 30%

compared with conventional products.

High Speed Switching High Voltage MOSFETs

13Compact High Efficiency MOSFETsIdeal for DC/DC and LiB circuits.

New processes utilized for high efficiency operation.

Underdevelopment

Underdevelopment

03 MOSFETs


Compact Bottom Electrode Type For Portable DevicesVML0806

Dimensions

Dimensions

Features

· The industry's smallest package size (ROHM June 2012 survey)

· Space-saving

Applications

· Mobile phones

· DSCs / DVCs

· Portable devices

HUML2020

Features

· Compact 2.0×2.0mm power package

· Contributes to greater miniaturization and space savings

Applications

· Mobile phones

· DSCs / DVCs

· Portable devices

Package

surface area (mm2)

VMT3 (0.8×1.2 t=0.5mm)

VML0806 (0.8×0.6 t=0.36mm)

Thickness (mm)

1.44 0.48

0.50 0.36

67% Down

29% Down

Package

Part No.

ID / PD

RDS(on)VGS=4.5Vtyp.

TSST8(3.0×1.9 t=0.8mm)

HUML2020(2.0×2.0 t=0.6mm)

TT8J13

-2.5A / 1.25W -1.5A / 2W -2A / 1W

UT6J2

44m

TUMT6 (2.0×2.1 t=0.77mm)

US6J12

75m40m

30% Down

47% Down

0.6 0.6

0.8

0.8

0.5

0.15

0.35

0.5

0.2

0.2

Underdevelopment

Underdevelopment

HUML2020L8<Dual>

HUML2020L3 HUML2020L8<Single>

2.0

2.0

(1) (2)

(5)

(3)

(4)(6)

0.27

5

0.55

0.9

0.3

0.27

5

0.65

0.30.65

1.30.65

0.25 0.651 pin mark

2.0

2.0

1 pin mark

0.3

1.3

(1) (2)

(5)

(3)

(4)(6)

0.27

50.

8

0.65 0.65

1.0

0.27

5

0.175

1.1

0.45

0.6

0.175

0.25

2.0

2.0

1 pin mark

1.30.3

1.50.25

(1) (2)

(3)

1.0

0.25

0.4

04MOSFETs


Compact Bottom Electrode Type For Portable Devices Lineup

0.15

0.1

8

10

12

6

5

3

3

VML0806

HUML2020

0.1

2

4.5

6

35

40

120

130

6

10

3.8

4.8

27

30

76

95

3.0

3.4

18

20

55

70

2.5

2.5

18.9

12.6

9.3

14

15

40

50

2.5

2.5

13.5

9.0

7.1

14

15

40

50

Package Polarity Part No. VDSS(V) ID(A)RDS(on) Typ.()

1.2V 1.5V 1.8V 2.5V 10V4.5VPD(W)

20

20

30

30

30

12

20

12

20

RV1C002UN

RV1C001ZP

RF4E080BN

RF4E100BN

RF4E120BN

RF4A060AP

RF4C050AP

UT6J2

UT6J3

Nch

Nch

Pch

Pch

Pch+Pch

: Under development

05 MOSFETs


ECOMOSTM Series for Portable Equipment

Stable low voltage driveRDS(on) ComparisonProcess Roadmap

Application Circuit Examples

0.9V Drive Loss Comparison

Features

· Low 0.9V drive (1.2V, 1.5V, and 1.8V drive models available)

· Compatible with single-battery operation

· Ultra-fine processes utilized for low ON resistance

· Wide voltage lineup: 12V to 50V

· Multiple package types offered: VMT3 (0.8x1.2mm) to CPT (5.5x6.5mm)

Applications

· Mobile phones

· Compact digital cameras and DSLRs

· E-books, portable audio

New low voltage processes ensure stable

operation at VGS=0.9V. In addition,

ON-resistance is reduced significantly

compared with conventional 2.5V products,

resulting in 20-90% lower power consumption

and greater energy savings.

Also compatible with solar batteries

(1V=0.5V/Cell x 2 Cells).

1.2

1.0

0.8

0.6

0.4

0.2

02001 2003 2005 2007 2009 2011

RDS(on) × A (First generation designated as 1)

Third Generation

Second Generation

First Generation

<VMT3 Package Comparison>

100

2

2

4

6

8

10

3 4 5

Drive Voltage :VGS(V)

ON

Res

ista

nce

: RD

S (o

n) (

)

3W at 0.9V

1.7W at 2.5V

0.9VVoltage

Conventional Products1.5V Drive

LED Lamp DriveLoad Switch Muting Circuit DC / DC Converter Charge Control Switch

Load

VDD

Load

VDD

PDrive=1.0mW=IB×VBE PDrive=0.1mW=Q×V×f

Bipolar Transistor 0.9V Drive MOSFET

Drive Loss

Reduced 90%

Battery

06MOSFETs


ECOMOSTM Series Lineup<0.9V>

<1.2V>

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.2

VMT3

EMT3

EMT3F

EMT6

UMT3

UMT3F

UMT6

SST3

0.15

0.15

0.15

0.15

0.2

0.2

0.15

0.2

2.2

2.2

2.2

2.2

2.2

2.2

2.2

2.2

3

3

3

3

3

3

3

3

2

2

2

2

2

2

2

2

1.7

1.7

1.7

1.7

1.7

1.7

1.7

1.7

1.6

1.6

1.6

1.6

1.6

1.6

1.6

1.6

0.1

0.2

0.2

0.1

0.2

0.1

0.1

0.1

0.1

0.2

0.2

0.2

0.1

0.2

0.1

0.2

0.2

0.2

0.2

0.2

0.2

0.2

0.1

0.2

0.1

0.2

0.2

0.2

6.0

1.6

2.4

10.0

2.4

6

10

6

10

2.4

1.6

2.4

6

1.6

10

2.4

1.6

2.4

2.4

1.6

2.4

2.4

6.0

1.6

10

2.4

2.4

2.4

Pch

Pch

Nch

Pch

Nch+Nch

Pch+Pch

Nch+Nch

Nch+Nch

Pch+Pch

Nch

Nch

Pch

Pch

Nch

Nch

Nch

Nch

Pch

Nch

0.15

0.2

0.2

0.2

0.15

0.15

0.15

0.15

0.15

0.15

3.8

0.8

1.7

4.8

1

3.8

4.8

3.8

4.8

1.7

0.8

1

3.8

0.8

4.8

1

0.8

1.7

1

0.8

1

1.7

3.8

0.8

4.8

1

1.7

1.7

4.5

6.0

4.5

6

4.5

6

4.5

6.0

4.5

6.0

3.0

3.4

3

3.4

3

3.4

3

3.4

0.7

3.0

3.4

2.5

1.6

2.5

0.8

2.5

2.5

2.5

2.5

1.6

0.8

2.5

2.5

0.8

1.6

0.8

0.8

1.6

2.5

2.5

0.8

1.6

1.6

VMT3

VMT6

EMT3

EMT3F

EMT6

UMT3

UMT3F

UMT6

SST3


1.2V0.9V 1.5V 2.5V 4.5VPD(W)

50

50

50

50

50

50

50

50

Nch

Nch

Nch

Nch+Nch

Nch

Nch

Nch+Nch

Nch

RYM002N05

RYE002N05

RE1J002YN

EM6K34

RYU002N05

RU1J002YN

UM6K34N

RYC002N05


1.5V1.2V 2.5V 4V 4.5VPD(W)

RUM001L02

RUM002N02

RUM002N05

RZM001P02

RZM002P02

VT6K1

VT6J1

VT6M1

20

20

50

20

20

20

20

20

20

50

20

20

20

20

20

20

20

50

20

20

20

50

20

20

20

20

50

50

EM6M2

RUU002N05

RU1C001UN

RU1C002UN

RU1C001ZP

RU1C002ZP

UM6K33N

RUC002N05

RUE002N05

RUE002N02

RZE002P02

RE1C001UN

RE1C002UN

RE1C001ZP

RE1C002ZP

EM6K7

EM6K33

EM6J1

07 MOSFETs


<1.5V>

2

1.5

3

2.5

2

1.3

2.5

2.5

1

1.5

1.3

2.5

2

4

3

2

1.3

3.5

4.5

3.5

2.5

2

1.3

1.5

1.3

6

2.5

6

5

4.5

3.5

2.5

2.5

2.5

2.5

2.5

2.4

2.5

2.5

2.4

2.4

4

2

4

2.5

2

2.5

170

300

75

90

200

530

120

100

330

300

530

80

170

40

72

200

530

66

50

75

90

200

530

300

530

33

100

27

48

50

75

90

140

100

140

100

180

140

180

180

55

170

55

110

200

120

Nch

Pch

Pch+Pch

Nch+Nch

Nch+Nch

N+SBD (0.5A)

P+SBD (0.5A)

Pch

Nch

Pch

Nch

Nch

Pch

Nch

Pch+Pch

Pch

Nch

NchPch

Pch

P+SBD (1A)

N+SBD (0.7A)

Pch

Nch

Pch

Nch

1.25

1

1.25

0.7

0.8

0.8

1

95

170

40

55

105

280

65

85

280

170

280

49

95

27

39

105

280

38

28

40

55

105

280

170

280

24

65

17

26

28

41

55

68

65

68

65

105

95

68

105

105

33

95

30

60

105

74

65

240

70

75

130

30

44

75

190

48

50

190

130

190

39

75

22

28

75

190

31

22

30

44

75

190

130

190

20

52

14

19

22

31

44

49

52

49

52

80

65

49

80

80

25

75

22

44

75

58

WEMT6

TUMT3

TUMT6

TSMT3

TSMT5

TSST8

Package Polarity Part No. VDSS(V) ID(A)RDS(on) Typ.(m)

1.5V 2.5V 4.5V4VPD(W)

RW1C020UN

RW1C015UN

RW1A030AP

RW1A025AP

RW1A020ZP

RW1A013ZP

RW1C025ZP

RW1C026ZP

ES6K1

ES6U2

ES6U1

RUF025N02

RUF020N02

RAF040P01

RZF030P01

RZF020P01

RZF013P01

RUL035N02

RAL045P01

RAL035P01

RAL025P01

US6J12

US6J11

US6M11

RT1C060UN

TT8K1

RT1A060AP

RT1A050ZP

RT1A045AP

TT8J11

TT8J13

TT8J21

TT8M1

TT8M3

TT8M2

TT8U1

TT8U2

RUR040N02

RUR020N02

RZR040P01

RZR025P01

RZR020P01

QS5U36

20

20

12

12

12

12

20

20

20

20

12

20

20

12

12

12

12

20

12

12

12

12

12

20

12

20

20

12

12

12

12

12

20

20

20

20

20

30

20

20

20

20

20

12

12

12

20

08MOSFETs


<1.5V>

7.5

6.5

7

6

5.5

4.5

3.5

4

7

2.5

2

10

20

20

29

19

39

29

49

75

66

24

110

13

20

Nch

Pch

Pch+Pch

Nch

Pch

Pch

PNP

1.5

15

2

14

19

11

22

19

27

41

36

13

60

11

11

9

11

16

8

16

15

21

31

26

10

44

8

8.5

TSMT8

SOP8

CPT3


1.5V 2.5V 4.5V4VPD(W)

RQ1C075UN

RQ1C065UN

RQ1A070ZP

RQ1A060ZP

QS8J13

QS8J12

QS8J11

QS8J2

RQ1A070AP

QS8F2

RUS100N02

RZD200P01

20

20

12

12

12

12

12

12

12

12

30

20

12

<1.8V>

0.3

1.5

1.5

1.5

EMT6

TUMT3

TUMT6

TSMT5

Nch+Nch

Nch

Nch+Nch

Nch+SBD (0.5A)

0.15

0.8

1

1.25

0.7

0.8

170

170

170

130

130

130


2.5V

1

220

220

220

1.8V 4V 4.5VPD(W)

EM6K6

RUF015N02

US6K4

QS5U34

20

20

20

20

5

5

4.5

2

40

44

50

200

27

26

28

105

22

19

22

75

RUQ050N02

RZQ050P01

RAQ045P01

QS6J11

20

12

12

12Pch+Pch

Nch

Pch1.25TSMT6

09 MOSFETs


Features

· Broad voltage lineup (VDSS=40V-250V)

· Compact, high power package types

· Ultra-fine processes utilized for high efficiency operation

· Ideal for step-up converters and load switch circuits for LED backlighting

· Industry-leading ON-resistance

· Complex configuration reduces the number of external parts

· Contributes to thinner, smaller, more efficient sets

Advantages

Broad Lineup

Applications

Power MOSFETs

8 models offered in different voltages (VDSS=40V to 250V). Thin,

compact, high power package types available in both Nch and

Pch and single/dual configurations for broad compatibility.

18mm

Heat sinkCapacitor Capacitor Surface Mount

9mm

HeightHeight

<Power Management Circuit> <Battery Pack Protection Circuit>

<Full Bridge>

M

Motor Drive CircuitLED Backlight Circuit

DC/DC Converter Circuit

VIN

ControlIC

LEDController

DC / DCIC

AC adaptor(DC IN)

Multi DC / DC Converter

Li-ion battery(DC IN)

South bridge

North bridge

CPU coreNchPWM

Pch

IC NchPch

DC IN Li-ion battery

Pch Pch

for LED Backlighting, Motor Drives, and DC/DC Converters

10MOSFETs



4V2.5V 4.5V 10VQg (nC)(VGS=5V)

PD(W)

60

60

60

60

60

60

60

60

60

60

60

60

60

60

3

3

3

3

3

3

3

3

–

–

–

–

–

–

2.3

2.3

2.3

2.3

2.3

2.3

2.3

2.3

255

75

150

255

98

190

2.1

2.1

2.1

2.1

2.1

2.1

2.1

2.1

240

70

140

240

93

180

0.25

0.25

0.25

0.25

0.25

0.25

0.25

0.25

1.5

3

2

1.5

3

2

RSM002N06

RSE002N06

RE1L002SN

EM6K31

RSU002N06

RU1L002SN

UM6K31N

RK7002B

RSF015N06

RSR030N06

RSR020N06

RSQ015N06

QS8M31


4V2.5V 4.5V 10VQg (nC)(VGS=5V)

PD(W)

VMT3

EMT3

EMT3F

TSMT3

TSMT6

TSMT8

EMT6

UMT6

SST3

UMT3

TUMT3

UMT3F

Nch+Nch

Nch

Nch

Nch+Pch

Nch0.15

Nch0.15

0.15

Nch+Nch0.15

Nch0.2

Nch0.2

Nch0.2

Nch0.2

Nch0.8

1

1.25

1.5

1.7

1.7

1.7

1.7

1.7

1.7

1.7

1.7

210

60

120

210

80

150

–

–

–

–

–

–

–

–

2

5

2.7

2

4

7.2

<60V>

20

4.5

8.0

16

1.6

1

3

2.5

2

2.5

2

2

1

4

4

0.7

7

7

4.5

4.5

3.5

SOP8

CPT3

TSMT3

TSMT6

TSMT8

TUMT5

TUMT3

Nch

Nch

Nch

Nch

Nch

Nch+Nch

Nch+Nch

Nch+Nch

P+SBD (0.1A)

Nch

Pch

Pch

Pch

Pch

Nch

Pch

15

20

20

0.8

1

1

2

1.25

1.5

28

185

105

50

150

490

53

100

135

105

200

150

–

53

53

1000

25

28

46

46

66

25

160

95

45

140

450

48

95

130

95

180

140

310

47

48

900

23

25

41

41

60

20

110

95

35

–

325

–

–

–

70

130

–

300

38

38

600

18

19

33

33

45

12

6

9

16

2.3

2.4

6.2

3.2

2.9

3.6

5

2.3

1.5

6.3

5.4

1.7

12

34

6.8

6.8

13

<45V>

–

–

–

–

200

–

68

125

180

200

415

45

45

45

45

45

45

45

45

45

45

45

45

45

45

45

45

45

45

45

45

45

<40V>

45LPT Nch50 9.5 43


4.5V

4V 10VPD(W)

RSJ450N04 40

Qg (nC)(VGS=10V)

RSD200N05

RSD046P05

RSD080P05

RSD160P05

RTF016N05

RSF010P05

RTR030N05

RTR025N05

RTR020N05

RSR025N05

RSR020P05

RTQ020N05

QS6K21

RVQ040N05

QS8K21

US5U35

RSH070N05

RSH070P05

SH8K22

SH8M24

VGS=4.5V

Power MOSFETs (for LED Backlighting, Motor Drives, and DC/DC Converters) Lineup

11 MOSFETs


SOP8

CPT3

LPT

Nch+Nch

Nch

20

2Nch

Nch

Pch

15

50

24

46

78

57

37

18

60

11

4.2

3

11

7

–

9.5

–

16

27

52

–

202

<60V>

Nch90

165

6.6

8.2

<80V>

TSMT3TSMT6

TSMT8

SOP8

CPT3

LPTNch

Nch

Pch

20

15

Nch+Nch

1

1.25

1.5 Nch

Pch

Nch

Pch

Nch

Pch

Pch

2

50

34

17

4.7

4.6

17

8.5

12.5

–

18

24

20

18

50

90

143

260

30

60

<100V>

CPT Nch2030

52

<190V>


4V 4.5V 10VQg (nC)(VGS=5V)PD(W)

60

60

60

60

60

60

60

60

60

60

31

55

100

78

48

23

77

–

5

3.5

28

52

–

70

–

21

73

–

–

–

6.5

4.5

5

8

15

22

14

40

80

100

RSH065N06

SH8K32

RSD050N06RSD080N06

RSD150N06RSD221N06

RSD140P06

RSJ400N06

RSJ800N06

RSJ10HN06


4V 4.5V 10VQg (nC)(VGS=5V)PD(W)

80

80

120

230

110

220

3.4

2.6SH8M41

1

2

2

2

2

1

1

1

Package Polarity Part No. VDSS(V) ID(A) RDS(on) Typ.(m)4V 4.5V 10V

Qg (nC)(VGS=5V)PD(W)

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

100

470

400

260

260

400

135

240

145

105

85

36

155

38

21

13.5

7

100

50

460

380

250

250

380

130

230

100

80

150

36

95

48

440

350

240

240

350

120

210

135

95

75

33

135

33

19

12

6.5

85

48

1

1.5

2

2

1.5

3

2.5

5

10

17.5

20

13

30

40

55

65

15

25

RSR010N10

RSQ015P10

QS8K51

QS8M51

SP8M51

RSD050N10

RSD100N10

RSD175N10

RSD201N10RSD131P10

RSJ300N10

RSJ400N10

RSJ550N10

RSJ650N10

RSJ151P10

RSJ250P101VGS=10V 2 VGS=4.5V

1VGS=10V 2 VGS=4.5V

1

1

1

1

1

1

1

1



190

190

248

136

245

135

240

130

7.5

10 RCD075N19RCD100N19

SOP8Pch

Nch2

12MOSFETs


CPT3

TO-220FM

Nch

40

20

Nch

8.3

15

26

8.5

15

26

40

60

80

125

<200V>



200

200

200

200

200

200

200

200

200

200

200

670

540

250

140

550

250

135

100

60

42

28

3

5

7.5

10

8

12

16

20

30

45

70

RND030N20RCD051N20RCD075N20RCD100N20RCX081N20RCX120N20RCX160N20RCX200N20RCX300N20RCX450N20RCX700N20

LPT Nch40

40

60

80

125

8.5

15

26

200

200

200

200

200

200

200

100

60

42

28

550

250

135

20

30

45

70

8

12

16

RCJ200N20RCJ300N20RCJ450N20RCJ700N20RCJ081N20RCJ120N20RCJ160N20

SOP8

CPT3

TO-220FM

LPT

TSMT3

Nch

Nch

Nch

Nch

Pch

Nch

2

20

40

35

30

40

1 3.5

5.2

8

8.5

15

25

8.5

15

26.5

35

60

80

120

8.5

15

60

80

120

<250V>


4V 4.5V 10VQg (nC)

(VGS=10V)PD(W)

250

250

-250

250

250

250

250

250

250

250

250

250

250

250

250

250

250

250

7.4

7.2

6.8Ω

1.25Ω

2.2Ω

930

410

225

970

460

245

180

105

77

48

970

460

105

77

48

0.5

3

-2.5

4

6

8

5

8

10

12

22

33

51

5

8

22

33

51

RDR005N25

SH8M70

RCD041N25

RCD060N25

RCD080N25

RCX051N25

RCX080N25

RCX100N25

RCX120N25

RCX220N25

RCX330N25

RCX511N25

RCJ050N25

RCJ080N25

RCJ220N25

RCJ330N25

RCJ510N25 : VGS = 4.5V

13 MOSFETs


Compact High Efficiency MOSFETs· Low Qg and RDS(on)

· Compact high heat dissipation package (3.3x3.3mm)

· Low loss

Features

DC/DC converters, LiBs

Applications

High efficiency design + Compact package = Low power consumption + Small mountintg area

Original low Qg and low RDS(on) processes make the RQ3E series MOSFETs ideal for DC/DC converter and motor circuits. Additional features

include lower ON resistance (85% lower than conventional products) and a compact package size.

Dimensions

(Unit : mm)

3.3

3.2

3.0

0.650.32 2.6

0.3

2.0

0.3

3.3

0.15

0.15

Package

Part No.

ApplicationCircuit Example

(DC/DC Converter)

Mounting Efficiency

SOP8 (6.0×5.0 t=1.7mm) HSMT8 (3.3×3.3 t=0.8mm)

RXH125N03 RQ3E180BN

ID / PD 12.5A / 2.0W 18A / 2.0W

RDS(on)

VGS=4.5 typ.9.5m 3.7m

9.5m×(6.0mm×5.0mm)

285m · mm2

5.0mm×6.0mm×3pcs=90mm2 3.3mm×3.3mm×2pcs=22mm2

3.7m×(3.3mm×3.3mm)

41m · mm2

60% Down

64% DownMounting

Area

Hi-Side

Low-Side

Vin=12V

PWMControlIC

CPU

SOP8×3 Hi-Side

Low-Side

Vin=12V

PWMControlIC

CPU

HSMT8×2

85% lower

ON resistance

in a smaller footprint

14MOSFETs


Compact High Efficiency MOSFET Lineup

PD (W) VDSS(V)

HSMT8 Nch 30

VGSS(V)

20

15

13

12

10

8

7

18

10

3.8

4.4

6.6

7.7

11.0

20.0

2.8

8.8

5.3

6.7

8.6

11.0

16.0

29.0

3.7

12.0

7.0

6.0

4.7

4.2

3.0

1.4

16.0

1.6

Part No.

2.0

ID(A)RDS(ON) Typ.(m)

VGS=10V VGS=4.5VQgd(nC)

23.0

16.0

14.0

10.5

7.2

4.6

37.0

5.0

Qg(nC)(VGS=5V)Package Polarity

RQ3E150BN

RQ3E130BN

RQ3E120BN

RQ3E100BN

RQ3E080BN

RQ3E070BN

RQ3E180BN

RQ3E100MN

15 MOSFETs


· Supports high frequency switching (reducing switching loss)

· Contributes to a smaller mounting area (lower ON resistance → smaller package)

· High performance operation (lower switching loss and ON resistance)

Features

Power supplies, lighting

Applications

High Speed Switching High Voltage MOSFETs

High-Speed Switching (Low Loss)

Advanced high voltage processes were utilized for lower ON

resistance and Qg - ideal for PFC circuits in switching power

supplies and main switching circuits. Contributes to greater

compactness and higher efficiency.

Application Circuit

Power Consumption Comparison

High efficiency elements reduce total costs

Switching Power Supply Circuit (Primary)

IC

IC

PFC SW

RDS(on) Comparison Qg Comparison

30

25

20

15

10

5450 500 550 600 650

RD

S (o

n) ×

Qg

( · n

C)

VDSS (V)

Conventional Products RDX Series

50% lower

Qg reduced40%

New Generation

Total Gate Charge : Qg(nC)

Tota

l Sou

rce

Vol

tage

: V

GS(V

)

Ta=25°CVDD=300VID=10APulsed

16

14

12

10

8

6

4

2

00 10 20 30 40 50

Low loss fluctuation based on input voltage Reduced switching loss (even with lower current rating) results in smaller total loss

Advantages in PFC Circuits

240220Input voltage (V)

PFC Po=125W Lpss on OFF

PFC

OFF

loss

(W)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0100 120

R5011ANX(500V/11A)

Competitive Planer(500V/15A)

R5009ANX(500V/9A)

On Power Consumption

SW Power Loss

Advantages in Main Switching Circuits1.6

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.3

1.3 0.8

0.4

1.2

R5009ANX(500V/9A)Conventional Products(500V/12A)

Pow

er C

onsu

mp

tion

(W)

at 200kHz

25%Down

ConventionalProducts

16MOSFETs


High Speed Switching High Voltage MOSFETs Lineup


10V 10VQg Typ.(nC)

PD(W)

0.5

8

5

7

4

6

5

7

9

11

13

16

19

21

12

15

18

20

5

7

9

11

13

16

19

21

6

8

10

12

15

18

20

2

5

8

10

15

20

25

46

46

9

0.73

1.3

0.78

1.4

0.9

1.3

0.8

0.55

0.38

0.29

0.21

0.18

0.17

0.32

0.23

0.21

0.19

1.3

0.8

0.55

0.38

0.29

0.21

0.18

0.16

0.9

0.6

0.43

0.32

0.23

0.21

0.17

3.3

1.6

0.79

0.43

0.23

0.17

0.12

0.065

0.069

TO-220FM

TO-3PF

TO-247

CPT3

SOP8

LPT

Nch+Nch

75

Nch

100

2

40

40

50

40

50

40

50

35

40

50

110

120

150

120

120

3.8

15

10.8

13

11

15

10.8

13

21

30

35

50

55

64

35

60

55

65

10.8

13

21

30

35

50

55

64

15

21

25

35

60

63

65

12.7

21

39

62

50

65

88

150

150

SP8K80

R4008AND

R5205CND

R5207AND

R6004CND

R6006AND

R5005CNJ

R5007ANJ

R5009ANJ

R5011ANJ

R5013ANJ

R5016ANJ

R5019ANJ

R5021ANJ

R6012ANJ

R6015ANJ

R6018ANJ

R6020ANJ

R5005CNX

R5007ANX

R5009ANX

R5011ANX

R5013ANX

R5016ANX

R5019ANX

R5021ANX

R6006ANX

R6008ANX

R6010ANX

R6012ANX

R6015ANX

R6018ANX

R6020ANX

R8002ANX

R8005ANX

R8008ANX

R8010ANX

R6015ANZ

R6020ANZ

R6025ANZ

R6046ANZ

R6046ANZ1

500

400

525

525

600

600

500

500

500

500

500

500

500

500

600

600

600

600

500

500

500

500

500

500

500

500

600

600

600

600

600

600

600

800

800

800

800

600

600

600

600

600

40

17 MOSFETs


· Contributes to higher inverter efficiency

· Smaller mounting area (Low ON resistance Smaller package size,

High-speed trr No FRD required in parallel)

Features

· Solar battery power conditioners

· LCD TVs (integrated power inverter)

· Motor drives

Applications

PrestoMOSTM Series : High trr / High Voltage MOSFETs

Presto: Italian for 'quick' or 'rapid'

Increases inverter efficiency in a smaller mounting area

Motor Diver Loss ComparisonPower Conditioner Loss Comparison

Application Circuits

ROHM's new PrestoMOST M series of high voltage MOSFETs feature

industry-leading ON resistance and high switching speeds. They are the first to

integrate a high-speed trr diode that eliminates the need for an FRD to

minimize commutation loss generated during reverse recovery. This not only

reduces power consumption, but the number of external parts required as well.

Time (ns)

Cur

rent

(A

)

Measurement Conditions : di/dt=100A/s, IF=8A (Rated Current)

external componentsNo external FRDs required

external components No external FRDs required

MIGBT FRD High Speed trr

Body Di

IGBT and FRD integrated into a single

increases inverter efficiency

while reducing mounting area

<Power Conditioner> <Motor Driver>

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.00 2 4 6 8 10

IF[A]

VF

[V]

Standard FRD

00.0

0.5

1.0

1.5

2.0

2.5

2 4 6 8 10

MOS-Dominant Region

Ideal for home appliances - reduces yearly power consumption

Standard IGBT

ID[A]

VC

E [V

]

Lower conduction lossLower conduction lossLower conduction loss

Conventional Products

trr reduced80%

ReducedReducedregenerative lossregenerative lossReducedregenerative loss

18MOSFETs


PrestoMOSTM Series Lineup

MOSFET

8

12

9

11

16

8

12

15

20

25

46

25

46

LPT

TO-220FM

TO-3PF

TO-247

Nch

Nch

Nch

Nch50

50

120

150

120

20

35

18

30

45

20

35

42

65

85

150

85

150

0.73

0.39

0.65

0.4

0.22

0.73

0.39

0.27

0.2

0.14

0.075

0.14

0.075

67

75

78

85

100

67

75

90

105

120

145

120

143

Package Polarity Part No. VDSS(V) ID(A)RDS(on) Typ.() Qg Typ.(nC) trr(Typ.)

(ns)10V 10VPD(W)

R6008FNJ

R6012FNJ

R5009FNX

R5011FNX

R5016FNX

R6008FNX

R6012FNX

R6015FNX

R6020FNX

R6025FNZ

R6046FNZ

R6025FNZ1

R6046FNZ1

600

600

500

500

500

600

600

600

600

600

600

600

600

19 MOSFETs


· Reduced noise during switching

· Supports high-frequency operation

Features

Power supplies, lighting

Applications

Low Noise, High-Speed Switching, High Voltage Resistance MOSFETs

Low loss + Low noise

Adopting new processes has allowed ROHM to achieve low ON resistance, high-speed switching, and low noise characteristics.

This simplifies circuit design and makes them ideal for applications pursuing low noise operation.

Ron Comparison(TO-220) Noise Comparison

Conventional Product A

Conventional Product B

EN Series

Reference : dB notation

dB=20log10 (Gain)

6dB 2x, 10dB 3.2xThe EN Series reduces noise by more than half compared with Conventional Product B

EN Series vs. Conventional Product B

Conventional Product A vs. EN Series

The EN Series features a peak noise 6-10dB lower

The EN Series provides lower noise than Planar types

Switching Power Supply Circuit Evaluation

Evaluation Set

Switching Power Supply Circuit Diagram

Radiated Emission Comparison(H)(dBuV)

Radiated Emission Comparison(H)(dBuV)

70.0

60.0

50.0

40.0

30.0

20.0

10.0

70.0

60.0

50.0

40.0

30.0

20.0

10.0

10.00 100.00

MHz

10.00 100.00 1000.00

1000.00

MHz

Power Loss Comparison (PFC Circuit)

Planer ConventionalProduct

R60xxENSeries

100

80%DOWN

65%DOWN

100

3520

Switching Loss Steady-State Loss

Critical Mode25

20

15

10

5

0R6020ENXR6020ANX

Total : 25% DOWNSW:72%DOWN

SW:72%DOWN

SW:72%DOWNSteady-State Loss8%DOWNSteady-State Loss8%DOWNSteady-State Loss8%DOWN

Continuous Mode25

20

15

10

5

0R6020ENXR6020ANX

Total : 16% DOWN

SW:33%DOWN

Steady-State Loss6%DOWN

IC

IC

PFC SW

Underdevelopment

20MOSFETs


Low Noise, High-Speed Switching,High Voltage Resistance MOSFETs Lineup


10V 10VQg Typ.(nC)

PD(W)

4

7

9

4

7

9

11

15

20

24

4

7

9

11

15

20

24

30

24

30

35

47

76

0.9

0.6

0.5

0.9

0.6

0.5

0.36

0.27

0.18

0.15

0.9

0.6

0.5

0.34

0.26

0.18

0.15

0.12

0.15

0.12

0.09

0.07

0.04

TO-220FM

TO-247

CPT

LPT

Nch

50

20

50

150

14

20

23

14

20

23

32

41

60

70

14

20

23

32

40

60

70

85

70

85

110

145

250

R6004END

R6007END2

R6009END2

R6004ENJ

R6007ENJ

R6009ENJ

R6011ENJ

R6015ENJ

R6020ENJ

R6024ENJ

R6004ENX

R6007ENX

R6009ENX

R6011ENX

R6015ENX

R6020ENX

R6024ENX

R6030ENX

R6024ENZ1

R6030ENZ1

R6035ENZ1

R6047ENZ1

R6076ENZ1

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

600

: Under development

21 MOSFETs


Internal Circuits

Nch+SBD

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain(1) (2) (3)

(5) (4)

Pch+SBD

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

(6)Drain(1) (2)

(5)

(3)

(6) (4)

Pch+SBD

(1)Anode

(2)Source

(3)Gate

(4)Drain

(5)Cathode(1) (2) (3)

(5) (4)

Pch+SBD

(1)Anode

(2)Source

(3)Gate

(4)Drain

(5)N/C

(6)Cathode(1) (2) (3)

(6) (5) (4)

Pch+SBD

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain(1) (2) (3)

(5) (4)

Nch+SBD

(1)

(1)Anode

(2)Source

(3)Gate

(4)Drain

(5)Cathode(2) (3)

(5) (4)

MOSFET + SBD

Nch+SBD

(1)Gate

(2)Source

(3)Cathode

(4)Anode

(5)Anode

(6)Drain(1) (2) (3)

(6) (5) (4)

(1)Anode

(2)Anode

(3)Source

(4)Gate

(5)Drain

(6)Drain

(7)Cathode

(8)Cathode

Pch+SBD

(1) (2) (3)

(8) (5)(6)(7)

(4)

Nch+Nch

(1)TR1: Source

(2)TR1: Gate

(3)TR2: Drain

(4)TR2: Source

(5)TR2: Gate

(6)TR1: Drain(1) (2) (3)

(6) (5) (4)

Nch+Pch

(1)TR1: Source

(2)TR1: Gate

(3)TR2: Drain

(4)TR2: Source

(5)TR2: Gate

(6)TR1: Drain(1) (2) (3)

(6) (5) (4)

Pch+Pch

(1)TR1: Source

(2)TR1: Gate

(3)TR2: Drain

(4)TR2: Source

(5)TR2: Gate

(6)TR1: Drain(1) (2) (3)

(6) (5) (4)

MOSFET Dual

Pch+Pch

(1)TR1: Gate

(2)TR1: Source

(3)TR2: Gate

(4)TR2: Source

(5)TR2: Drain

(6)TR2: Drain

(7)TR1: Drain

(8)TR1: Drain(1) (2) (3)

(8) (5)(6)(7)

(4)

Nch+Nch

(1)TR1: Source

(2)TR1: Gate

(3)TR2: Source

(4)TR2: Gate

(5)TR2: Drain

(6)TR2: Drain

(7)TR1: Drain

(8)TR1: Drain(1) (2) (3)

(8) (5)(6)(7)

(4)

22MOSFETs


Dimensions

Note : 1. Characters in ( ) under the package designation denotes the JEITA No. Character in < > under the package designation denotes the JEDEC No. 2. For additional details, please refer to the technical specifications.

(Unit : mm)

Surface Mount Type

Leaded (Through-Hole) Type

1.2 0.5

0.130.16

0.8±0.10.4 0.4

(6) (5) (4)

(1) (2) (3)

1.2

0.92

0.14

0.14

TO-263AB

PSOP8

TO-247

TO-252E

HSMT8

0.5

5.0

6.0

0.5

0.41.27

0.220.9

5.0

3.91

0.3

0.28

3.5

0.83

(SC-105AA) (SC-89) (SC-107BB)

(SC-85)

(SC-96) (SC-95) 0.8

0.2

0 to 0.05

10.0

15.55.5 3.0

3.3

0.9

5.455.45

4.5

26.5

16.5

16.5

0.44

10.0

14.5

14.8

3.6

4.52.8

2.60.752.542.54

0.8

1.2

3.2

1.3

15.0

12.0

8.0

2.0

14.0

3.3

3.2

3.0

0.650.32 2.6

0.3

2.0

0.3

3.3

0.15

0.15

HSOP8

6.0

0.41

1.27

4.9

5.7

0.25

1.0

0 to 0.1

1.29

0.62

5

4.01

3.47

50.

61

0.155.0

0.15

VML0806 HUML2020

(SC-107C)

2.0

2.0

1 pin mark

0.6

0.6

0.8

0.35

0.36

0.0

0 t

o 0

.05

15.94

3.6

4.07

2×2.1 0.71

(4.5

8)(5

.9)

3.15.45 5.45

3×1.27

20.1

921

.07

6.15

2.41

2.04

5.02

1.08

6.1

2.286 2.286

3×0.76

6.54

5.20.53

2.28

10.1

41.

64

LPTS(D2-PAK)CPT3(D-PAK)

MOSFETs - Richtop Optic Electronics (H.K.) Limited€¦ · 170 300 75 90 200 530 120 100 330 300...

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