Mosfet Notes 2

7/30/2019 Mosfet Notes 2

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THE P-CHANNEL MOSFET

A p-channel enhancement-type MOSFET (PMOS transistor), fabricated on

an n-type substrate with p+ regions for the drain and source. The device operates in

the same manner as the n- channel enhancement MOSFET except that vGS

and vDS

are negative and the threshold voltage Vt is negative. Also, the current iD enters the

source terminal and leaves through the drain terminal.

PMOS technology originally dominated MOS manufacturing. However,

because NMOS devices can be made smaller and thus operate faster, and because

NMOS historically required lower supply voltages than PMOS, NMOS technology

has virtually replaced PMOS.

COMPLEMENTARY MOS OR CMOS

Figure 1.7 Cross-Section of a CMOS IC.

As the name implies, complementary MOS technology employs MOS

transistors of both polarities. Indeed, at the present time CMOS is the most widely

used of all the IC technologies.

Figure 1.7 shows a cross-section of a CMOS chip illustrating how the

PMOS and NMOS transistors are fabricated. Observe that while the NMOS

transistor is implemented directly in the p-type substrate. The PMOS transistor is

fabricated in a specially created n region, known as an n well. The two devices are

isolated from each other by a thick region of oxide that functions as an insulator.

OPERATING THE MOS TRANSISTOR IN THE SUBTHRESHOLD

REGION


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The n-channel MOSFET operation implies that for vGS< Vt, no current flows

and the device is cut off. This is not entirely true, for it has been found that for

values of vGS smaller than but close to Vt, a small drain current flows. In this

subthreshold region of operation the drain current is exponentially related to vGS.

Although in most applications the MOS transistor is operated with vGS > Vt, there

are special, but a growing number of, applications that make use of subthreshold

operation.

CURRENT-VOLTAGE CHARECTERISTICS

Circuit Symbol

Figure 1.8 (a) Circuit symbol for the n-channel enhancement-type MOSFET. (b) Simplified

circuit symbol to be used when the source is connected to the body.

The iD-vDS Characteristics


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Figure 1.9(a) An n-channel enhancement-type MOSFET with vGS and vDS applied and with thenormal directions of current flow indicated. (b) The iDvDS characteristics.

Figure 1.9 (a) shows an n-channel enhancement-type MOSFET with

voltages vGS and vDS applied and with the normal directions of current flow

indicated. This conceptual circuit can be used to measure the iD-vDS characteristics,which are a family of curves, each measured at a constant vGS.

The characteristic curves in Fig. 4.11(b) indicate that there are three distinct

regions of operation, the cutoff region, the triode region, and the saturation region.

The device is cut off when vGS < Vt.

To operate the MOSFET in the triode region , a channel must be induced,

vGSVt, and then keep vDS small enough so that the channel remains continuous.

This condition can be stated explicitly in terms of vDS by writing vDS


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gate-to-drain voltage falling below Vt. This condition can be stated explicitly in

terms of vDS by writing vDSvGS - Vt.

In the saturation region, the iD-vDS characteristics can be described by the

relationship of

Thus in saturation the MOSFET provides a drain current whose value is

independent of the drain voltage vDS and is determined by the gate voltage vGS.

Since the drain current is independent of the drain voltage, the saturated MOSFET

behaves as an ideal current source whose value is controlled by vGS.

Figure 1.10 Large-signal equivalent-circuit model of an n-channel MOSFET operating in the

saturation region.

Figure 1.10 shows a circuit representation of MOSFET operation in the

saturation region. Note that this is a large-signal equivalent-circuit model.

FINITE OUTPUT RESISTANCE IN SATURATION

That in saturation, iD is independent of vDS. Thus a change in the

drain-to-source voltage vDS causes a zero change in iD, which implies that the

incremental resistance looking into the drain o f a saturated MOSFET is infinite.

That once the channel is pinched off at the drain end, further increases in vDS have

no effect on the channel's shape. But, in practice, as vDS is increased, the channel

pinch-off point is slightly moved. Specifically, away from the drain, toward thesource.


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Figure 1.11 Increasing vDSbeyond vDSsat causes the channel pinch-off point to move slightly away

from the drain, thus reducing the effective channel length.

This is illustrated in Fig. 1.11, from which we note that the voltage across

the channel remains constant at vGS -Vt= vDSsat, and the additional voltage appliedto the drain appears as a voltage drop across the narrow depletion region between

the end of the channel and the drain region. This voltage accelerates the electrons

that reach the drain end of the channel and sweeps them across the depletion region

into the drain. Note that the channel length is reduced, from L to L-L. This

phenomenon is known as channel-length modulation. Since iD is inversely

proportional to the channel length, iD increases with vDS. We replace L with L-L.

Assume that L/L


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Figure 1.12 Effect ofvDSon iD in the saturation regionby the factor (1 + vDS).

In the saturation region the output resistance ro is

Where


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Figure 1.13 Large-signal equivalent circuit model of the n-channel MOSFET in saturation,

incorporating the output resistance ro.

Characteristics of the p-Channel MOSFET

The circuit symbol for the p-channel enhancement-type MOSFET is shown

in Fig.1.14 (a), in which an arrowhead pointing in the normal direction of current

flow is included on the source terminal.

The voltage and current polarities for normal operation are indicated in Fig. 1.14

(b). For t h e p-channel device the threshold voltage Vt is negative. To induce a

channel we apply a gate voltage that is more negative than Vt, i.e. vGS Vt. When a

drain voltage vDS is more negative than the source voltage, the current iD flows out

of the drain terminal, as indicated in the figure.

To operate in the triode region vDS must satisfy vDS vGS - Vt. The current iDis given by

Figure 1.14 (a) Circuit symbol for the p-channel enhancement-type MOSFET. (b) The MOSFET

with voltages applied and the directions of current flow indicated.

To operate in the saturation region vDS must satisfy vDS vGS - Vt. The

current iD is given by


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The Role of the Substrate-The Body Effect

In many applications the source terminal is connected to the substrate (body)

terminal B, which results in the pn junction between the substrate and the induced

channel having a constant zero bias. In such a case the substrate does not play any

role in circuit operation.

In integrated circuits, the substrate is usually common to many MOS

transistors. In order to maintain the cutoff condition for all the substrate-to-

channel junctions, the substrate is usually connected to the most negative power

supply in an NMOS circuit and the most positive in a PMOS circuit. The resulting

reverse-bias voltage between source and body will have an effect on device

operation.Let us consider an NMOS transistor and its substrate be made negative

relative to the source. The reverse bias voltage will widen the depletion region.

This in turn reduces the channel depth. To return the channel to its former state,

vGS has to be increased. The effect of VSB on the channel can be most conveniently

represented as a change in the threshold voltage Vt. Specifically, it has been shown

that increasing the reverse substrate bias voltage VSB results in an increase in Vt,

according to the relationship

Where Vto is threshold for VSB = 0; fis a physical parameter with (2 f) typically

0.6 V; i s a fabrication-process parameter given by

Where q is the electron charge (1.6 x 1 0-19

C), NA is the doping concentration of

the p-type substrate, and s is the permittivity of silicon (11.7 o = 11.7 x 8.854 x

10

-1 4

= 1.04 x 1 0

-12

F/cm).The above equation indicates that an incremental change in VSB gives rise to

an incremental change in Vt which in turn results in an incremental change in iD

even though vGS might have been kept constant. It follows that the body voltage

controls iD; thus the body acts as another gate for the MOSFET, a phenomenon

known as the body effect.

Mosfet Notes 2

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