MOSFET - Farnell element14 · 5 OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5I Final Data Sheet Rev....
Transcript of MOSFET - Farnell element14 · 5 OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5I Final Data Sheet Rev....
MOSFETMetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-MOSFET,25VBSC009NE2LS5I
DataSheetRev.2.0Final
PowerManagement&Multimarket
2
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
12
34
56
78
43
21
56
78
SuperSO8
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
1DescriptionFeatures•Optimizedforhighperformancebuckconverters•MonolithicintegratedSchottkylikediode•Verylowon-resistanceRDS(on)@VGS=4.5V•100%avalanchetested•N-channel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParametersParameter Value UnitVDS 25 V
RDS(on),max 0.95 mΩ
ID 100 A
QOSS 27 nC
QG(0V..4.5V) 17 nC
Type/OrderingCode Package Marking RelatedLinksBSC009NE2LS5I PG-TDSON-8 09NE2L5I -
1) J-STD20 and JESD22
3
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
2MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current ID
-----
-----
10010010010040
A
VGS=10V,TC=25°CVGS=10V,TC=100°CVGS=4.5V,TC=25°CVGS=4.5V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W1)
Pulsed drain current2) ID,pulse - - 400 A TC=25°C
Avalanche current, single pulse3) IAS - - 50 A TC=25°C
Avalanche energy, single pulse EAS - - 50 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -16 - 16 V -
Power dissipation Ptot--
--
742.5 W TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56
3Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.7 K/W -
Thermal resistance, junction - case,top RthJC - - 20 K/W -
Device on PCB,6 cm2 cooling area1) RthJA - - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See figure 3 for more detailed information3) See figure 13 for more detailed information
5
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
4Electricalcharacteristics
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0V,ID=1mA
Breakdown voltage temperaturecoefficient dV(BR)DSS/dTj - 15 - mV/K ID=10mA,referencedto25°C
Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS,ID=250µA
Zero gate voltage drain current IDSS --
-3
0.5- mA VDS=20V,VGS=0V,Tj=25°C
VDS=20V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
1.050.80
1.350.95 mΩ VGS=4.5V,ID=30A
VGS=10V,ID=30A
Gate resistance RG - 1.1 1.8 Ω -
Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=30A
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 2400 3200 pF VGS=0V,VDS=12V,f=1MHz
Output capacitance1) Coss - 1400 1900 pF VGS=0V,VDS=12V,f=1MHz
Reverse transfer capacitance Crss - 130 - pF VGS=0V,VDS=12V,f=1MHz
Turn-on delay time td(on) - 5 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω
Rise time tr - 5 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω
Turn-off delay time td(off) - 27 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω
Fall time tf - 4 - ns VDD=12V,VGS=10V,ID=30A,RG,ext=1.6Ω
1) Defined by design. Not subject to production test
6
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
Table6Gatechargecharacteristics1)Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 5.7 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 3.9 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate to drain charge Qgd - 4.3 - nC VDD=12V,ID=30A,VGS=0to4.5V
Switching charge Qsw - 6.1 - nC VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total Qg - 17 23 nC VDD=12V,ID=30A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=30A,VGS=0to4.5V
Gate charge total Qg - 36 49 nC VDD=12V,ID=30A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 15 - nC VDS=0.1V,VGS=0to4.5V
Output charge Qoss - 27 - nC VDD=12V,VGS=0V
Table7ReversediodeValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS - - 74 A TC=25°C
Diode pulse current IS,pulse - - 400 A TC=25°C
Diode forward voltage VSD - 0.48 0.62 V VGS=0V,IF=11A,Tj=25°C
Reverse recovery charge Qrr - 5 - nC VR=15V,IF=12A,diF/dt=400A/µs
1) See ″Gate charge waveforms″ for parameter definition
7
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 40 80 120 1600
10
20
30
40
50
60
70
80
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A
]
0 40 80 120 1600
20
40
60
80
100
120
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
10-1 100 101 10210-1
100
101
102
103
1 µs
10 µs100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-6 10-5 10-4 10-3 10-2 10-1 10010-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
8
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 1 2 30
100
200
300
400
500
600
700
800
4 V
4.5 V
5 V10 V
3.5 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on
) [m
Ω]
0 10 20 30 40 500.0
0.5
1.0
1.5
2.0
3.2 V
3.5 V
4 V
4.5 V5 V
7 V 8 V10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 1 2 3 4 50
80
160
240
320
400
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs [S]
0 100 200 300 4000
200
400
600
800
1000
gfs=f(ID);Tj=25°C
9
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [m
Ω]
-60 -20 20 60 100 140 1800.0
0.5
1.0
1.5
2.0
2.5
3.0
typ
RDS(on)=f(Tj);ID=30A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th) [V]
-60 -20 20 60 100 140 1800.0
0.5
1.0
1.5
2.0
2.5
10 mA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[p
F]
0 5 10 15 20 25101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.4 0.8 1.210-1
100
101
102
103
-55 °C25 °C125 °C150 °C
IF=f(VSD);parameter:Tj
10
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV [A]
100 101 102 103100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 400
2
4
6
8
10
12
20 V
12 V
5 V
VGS=f(Qgate);ID=30Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
VDS[V]
IDSS[A
]
0 5 10 15 2010-6
10-5
10-4
10-3
10-2
125 °C
100 °C
75 °C
25 °C
IDSS=f(VDS);VGS=0V;parameter:Tj
Gate charge waveforms
11
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
6PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
12
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
Dimension in mm
Figure2OutlineTDSON-8Tape
13
OptiMOSTM5Power-MOSFET,25V
BSC009NE2LS5I
Rev.2.0,2015-03-10Final Data Sheet
RevisionHistoryBSC009NE2LS5I
Revision:2015-03-10,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2015-03-10 Release of final version
WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]
PublishedbyInfineonTechnologiesAG81726München,Germany©2015InfineonTechnologiesAGAllRightsReserved.
LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.infineon.com).
WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.