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Transcript of MOS-AK, San Francisco, Dec. 13, 2008 1 The HiSIM Family of Compact-Models for Integrated Devices H....
![Page 1: MOS-AK, San Francisco, Dec. 13, 2008 1 The HiSIM Family of Compact-Models for Integrated Devices H. J. Mattausch, N. Sadachika, M. Miyake, H. Kikuchihara,](https://reader035.fdocuments.us/reader035/viewer/2022062421/56649dd95503460f94acf542/html5/thumbnails/1.jpg)
1MOS-AK, San Francisco, Dec. 13, 2008
The HiSIM Family of Compact-Models for Integrated Devices
H. J. Mattausch, N. Sadachika, M. Miyake, H. Kikuchihara, U. Feldmann,
and M. Miura-Mattausch
Hiroshima University
HiSIM Research Center
Research Institute for Nanodevice and Bio Systems
Graduate School for Advanced Sciences of Matter
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2MOS-AK, San Francisco, Dec. 13, 2008
Outline of Presentation
1. Introduction2.Modeling Based on a Consistent Potential Dist
ribution3.Bulk MOSFET Model HiSIM24.Silicon-On-Insulator (SOI) MOSFET5.Double-Gate MOSFET6.MOS Varactor7.High-Voltage Devices
High-Voltage MOSFET Insulated Gate Bipolar Transistor (IGBT)
8.Thin-Film Transistor (TFT)9.Conclusion
![Page 3: MOS-AK, San Francisco, Dec. 13, 2008 1 The HiSIM Family of Compact-Models for Integrated Devices H. J. Mattausch, N. Sadachika, M. Miyake, H. Kikuchihara,](https://reader035.fdocuments.us/reader035/viewer/2022062421/56649dd95503460f94acf542/html5/thumbnails/3.jpg)
3MOS-AK, San Francisco, Dec. 13, 2008
Basic Compact Model Approaches for the MOSFET
Threshold-Voltage-Based Models (e. g. BSIM3, BSIM4)● currents expressed as functions of applied voltages● different equations for:
- sub-threshold region- linear region- saturation region
● implicit equation for surface potential● currents determined from drift and diffusion term of current density equation● developed calculation methods for the surface potential:
- iterative solution with the exact surface-potential equation ⇒HiSIM- approximate explicit solution by 1st & 2nd order perturbation theory, after prior conditioning of the surface-potential equation PSP⇒
New Generation of Surface-Potential-Based Models
New Generation of Inversion-Charge-Based Models● additional approximation to solve for inversion charge ⇒ EKV, BSIM5, ACM
21
2 gs
WI C V V V V
Lds ox th ds ds
p 0SS OX G S S S
p0
subs
2= ( ( )) = [exp ( ) ( ) 1 + exp ( ) 1 ]
nqNQ C V' y y y y
p
12
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4MOS-AK, San Francisco, Dec. 13, 2008
(solved by SPICE)
s
Basic Equations for Potential-Based Device Model
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5MOS-AK, San Francisco, Dec. 13, 2008
Consistency Property of Surface-Potential Model
The surface potential consistently determines charges, capacitances and currents under all operating
conditions.
= E: velocity : mobility
=Q()
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6MOS-AK, San Francisco, Dec. 13, 2008
Outline of Presentation
1. Introduction2.Modeling Based on a Consistent Potential Dist
ribution3.Bulk MOSFET Model HiSIM24.Silicon-On-Insulator (SOI) MOSFET5.Double-Gate MOSFET6.MOS Varactor7.High-Voltage Devices
High-Voltage MOSFET Insulated Gate Bipolar Transistor (IGBT)
8.Thin-Film Transistor (TFT)9.Conclusion
![Page 7: MOS-AK, San Francisco, Dec. 13, 2008 1 The HiSIM Family of Compact-Models for Integrated Devices H. J. Mattausch, N. Sadachika, M. Miyake, H. Kikuchihara,](https://reader035.fdocuments.us/reader035/viewer/2022062421/56649dd95503460f94acf542/html5/thumbnails/7.jpg)
7MOS-AK, San Francisco, Dec. 13, 2008
Development History of Bulk-MOSFET Model HiSIM
1990 JJAP Sub-1m MOSFETs short-channel effect model 1991 SISPAD “ 1st surface-potential-based model parameter extraction strategy1994 ICCAD “ simulation time & stability verification1995 Siemens Flash-EEPROM concurrent device/circuit development1998 STARC 100-nm MOSFET collaboration start
Release Activity2001 Oct. release to vendors HiSIM1.0.0 source code and manu
al2002 Jan. release to public “ “ Oct. “ HiSIM1.1.1 “
2003 Oct. Test release to STARC clients HiSIM2.0.0 source code and manual
2005 May release to CMC members HiSIM2.0.0 “ July “ + Verilog-A code Oct. “ HiSIM2.2.0 “2006 Jan. release to EDA vendors HiSIM2.3.0 2007 March “ HiSIM2.4.0 2008 Sept. release to CMC members HiSIM2.4.3 eval. for standardizati
on
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8MOS-AK, San Francisco, Dec. 13, 2008
Modeled Phenomena in HiSIM2.4.3 [Phenomena] [Subjects]
Short Channel:
Reverse-short Channel: impurity pile-up pocket implant Poly-Depletion: Quantum-Mechanical:
Channel-Length Modulation:
Narrow-Channel: Temperature Dependency: thermal voltage bandgap ni phonon scattering maximum velocity
Mobility Models: universal high Field Shallow-Trench Isolation: threshold voltage mobility leakage current Capacitances: intrinsic overlap lateral-field induced fringing
Binning OptionDFM Option
[Phenomena] [Subjects]
Non-Quasi-Static: transient time-domain AC frequency-domain
Noise: 1/f thermal induced gate cross-correlation
Leakage Currents: substrate current gate current GIDL current
Source/Drain Resistances:
Junction Diode: currents capacitances
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9MOS-AK, San Francisco, Dec. 13, 2008
HiSIM’s Surface Potentials at Source and Drain
The absolute values of the HiSIM surface potentialcompare well with 2D simulation.
21
0
0 ]}[1))(({)( ))()(())()(())((2' yyVyy
p
n
bsSVyqN
SGoxfbsfS
p
pbsSsubSi eeVyeVC
ox
oxox tC
kT
q
0
2
0p
ip p
nn FBgsG VVV '
dsfefff VL )0()(
Basic Surface-Potential Equation
Iterative HiSIM Solutionin Comparison to 2D-Devices Simulation
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10MOS-AK, San Francisco, Dec. 13, 2008
SLsaturates
Surface-Potential Dependence on Applied Voltages
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11MOS-AK, San Francisco, Dec. 13, 2008
Bias Dependence & Derivatives of Surface Potential
HiSIM accurately reproduces even the bias dependence of the surface-potential derivatives.
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12MOS-AK, San Francisco, Dec. 13, 2008
Ids vs. VxIds / Vx vs. Vx
Ids2 / Vx
2 vs. Vx Ids3 / Vx
3 vs. Vx
Gummel-Symmetry Properties (HiSIM243)model parameters: default
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13MOS-AK, San Francisco, Dec. 13, 2008
(approximating a quadratic potential distribution)
M. Miura-Mattausch et al., IEEE TED, 48, p. 2449, 2001.
Short-Channel-Effect Model
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14MOS-AK, San Francisco, Dec. 13, 2008
Including tail for high pocket-doping concentrations.
H. Ueno et al., IEEE TED, 49, p. 1783, 2002.
Vth (
V)
Pocket-Implantation Model
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15MOS-AK, San Francisco, Dec. 13, 2008
Model Extraction for Advanced 45nm Technology
HiSIM can model advanced 45nm technology very accurately without the necessity of binning.
Measurement
HiSIM
Wg/Lg=2m/200nm Wg/Lg=2m/40nm
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16MOS-AK, San Francisco, Dec. 13, 2008
Current Derivatives for Advanced 45nm Technology
The current derivatives of a 45nm technology can likewise be well reproduced with HiSIM.
MeasurementHiSIM
Wg/Lg=2m/40nm
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17MOS-AK, San Francisco, Dec. 13, 2008
HiSIM’s Model Evaluation Time
Iteration for surface-potential determination requires only a small fraction of the total model evaluation time.
S0 iteration
SLiteration
intrinsic devicecharacteristics
total CPU
extrinsic devicecharacteristics
Data: HiSIM2.4.0Vgs
Arb
itrar
y U
nits
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18MOS-AK, San Francisco, Dec. 13, 2008
Outline of Presentation
1. Introduction2.Modeling Based on a Consistent Potential Dist
ribution3.Bulk MOSFET Model HiSIM24.Silicon-On-Insulator (SOI) MOSFET5.Double-Gate MOSFET6.MOS Varactor7.High-Voltage Devices
High-Voltage MOSFET Insulated Gate Bipolar Transistor (IGBT)
8.Thin-Film Transistor (TFT)9.Conclusion
![Page 19: MOS-AK, San Francisco, Dec. 13, 2008 1 The HiSIM Family of Compact-Models for Integrated Devices H. J. Mattausch, N. Sadachika, M. Miyake, H. Kikuchihara,](https://reader035.fdocuments.us/reader035/viewer/2022062421/56649dd95503460f94acf542/html5/thumbnails/19.jpg)
19MOS-AK, San Francisco, Dec. 13, 2008
2D-Device
FOX
BOX
Determination of Involved Potentials
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20MOS-AK, San Francisco, Dec. 13, 2008
This Device does not show a floating body effect!
I-V Curve Reproduction and Short-Channel Effect
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21MOS-AK, San Francisco, Dec. 13, 2008
1/f-Noise Modeling
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22MOS-AK, San Francisco, Dec. 13, 2008
Comparison with 1/f-Noise in Bulk MOSFETs
1/f-Noise in the SOI-MOSFET is substantially increased!
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23MOS-AK, San Francisco, Dec. 13, 2008
Modeling of the Floating-Body Effect
The floating-body effect is modeled on the basis of excess hole charge due to impact ionization.
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24MOS-AK, San Francisco, Dec. 13, 2008
Modeling of the Dynamic-Depletion Effect
The dynamic-depletion effect is accurately captured due to the consistently potential-based model concept.
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25MOS-AK, San Francisco, Dec. 13, 2008
Outline of Presentation
1. Introduction2.Modeling Based on a Consistent Potential Dist
ribution3.Bulk MOSFET Model HiSIM24.Silicon-On-Insulator (SOI) MOSFET5.Double-Gate MOSFET6.MOS Varactor7.High-Voltage Devices
High-Voltage MOSFET Insulated Gate Bipolar Transistor (IGBT)
8.Thin-Film Transistor (TFT)9.Conclusion
![Page 26: MOS-AK, San Francisco, Dec. 13, 2008 1 The HiSIM Family of Compact-Models for Integrated Devices H. J. Mattausch, N. Sadachika, M. Miyake, H. Kikuchihara,](https://reader035.fdocuments.us/reader035/viewer/2022062421/56649dd95503460f94acf542/html5/thumbnails/26.jpg)
26MOS-AK, San Francisco, Dec. 13, 2008
Tsi=40nm
Tsi=20nm
Tsi=10nm
Tsi
The floating body potential makes modeling difficult.
gat
e
gat
e
Vgs=1VVds=0V
gat
e
gat
e
gat
e
gat
e
Body potential is floating.
Tsicarrier concentration
Specific Features of the Double-Gate (DG) MOSFET
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27MOS-AK, San Francisco, Dec. 13, 2008
HiSIM-DG Accuracy for the Center Surface Potential
The potentials at center and surface are determined with HiSIM-DG as accurately as in 2D-device simulation.
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28MOS-AK, San Francisco, Dec. 13, 2008
Short-Channel Effect in DG MOSFETs
The drastic reduction of the short-channel effect is a big advantage of the double-gate MOSFET.
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29MOS-AK, San Francisco, Dec. 13, 2008
NsubTSi
s0 (V
)
s0 (V
)
Potential Dependence: Silicon Thickness and Nsub
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30MOS-AK, San Francisco, Dec. 13, 2008
Ids-Vgs Characteristics Reproduction
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31MOS-AK, San Francisco, Dec. 13, 2008
Reduction of Tsi has only a small influence on the capacitance.
C-V Characteristics Reproduction
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32MOS-AK, San Francisco, Dec. 13, 2008
Influence of Qb cannot be ignored.
TSI=10nm, Tox=1nm, Lg=1um, Vds=50mV
Impurity-Concentration Dependence of Vth
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33MOS-AK, San Francisco, Dec. 13, 2008
Outline of Presentation
1. Introduction2.Modeling Based on a Consistent Potential Dist
ribution3.Bulk MOSFET Model HiSIM24.Silicon-On-Insulator (SOI) MOSFET5.Double-Gate MOSFET6.MOS Varactor7.High-Voltage Devices
High-Voltage MOSFET Insulated Gate Bipolar Transistor (IGBT)
8.Thin-Film Transistor (TFT)9.Conclusion
![Page 34: MOS-AK, San Francisco, Dec. 13, 2008 1 The HiSIM Family of Compact-Models for Integrated Devices H. J. Mattausch, N. Sadachika, M. Miyake, H. Kikuchihara,](https://reader035.fdocuments.us/reader035/viewer/2022062421/56649dd95503460f94acf542/html5/thumbnails/34.jpg)
34MOS-AK, San Francisco, Dec. 13, 2008
Structure of the Accumulation-Mode MOS-Varactor
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35MOS-AK, San Francisco, Dec. 13, 2008
is inverse proportionalto the electric field.
Carrier-Movement Delay in Accumulation Mode
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36MOS-AK, San Francisco, Dec. 13, 2008
Frequency Dependence of MOS-Varactor Capacity
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37MOS-AK, San Francisco, Dec. 13, 2008
Outline of Presentation
1. Introduction2.Modeling Based on a Consistent Potential Dist
ribution3.Bulk MOSFET Model HiSIM24.Silicon-On-Insulator (SOI) MOSFET5.Double-Gate MOSFET6.MOS Varactor7.High-Voltage Devices
High-Voltage MOSFET Insulated Gate Bipolar Transistor (IGBT)
8.Thin-Film Transistor (TFT)9.Conclusion
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38MOS-AK, San Francisco, Dec. 13, 2008
High-Voltage MOSFET Structures
(Asymmetric) (Symmetric)
Public/Release Activities for HiSIM_HV Model
2006 Oct. candidate for CMC standardization2007 Dec. selected for CMC standardization2008 June HiSIM_HV1.0.2 release (evaluated as first standard version)
2008 Dec. HiSIM_HV1.0.2 named CMC standard model
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39MOS-AK, San Francisco, Dec. 13, 2008
Channel-Length ModulationOverlap Capacitance
Beyond Gradual-Channel Approximation
HiSIM for Bulk-MOSFET
Complete Surface-Potential-Based Model
S0 : at source edge
SL : at the end of the gradual-channel approx.
S(L) : at drain edge (calculated from SL)
HiSIM2 Properties Facilitating Extension to HV-MOS
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40MOS-AK, San Francisco, Dec. 13, 2008
Ldrift
Ndrift
Potential drop in the drift region
All important potential values are known.No sub-circuit for the potential drop is necessary.
Consistent Potential Drop Modeling in Drift Region
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41MOS-AK, San Francisco, Dec. 13, 2008
HiSIM reproduces S(L) calculated by 2D-device simulator.
: potential determining LDMOS characteristics
S(L)
S(
L) [
V]
S(L)
S(
L) [
V]
S(
L) [
V]
S(
L) [
V]
Vgs [V] Vds [V]
Consistency Evaluation of Key Potential Values
HV HV
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42MOS-AK, San Francisco, Dec. 13, 2008
Good agreement between HiSIM-HV results and 2D-device simulation results is achieved.
: 2D-Device Simulation Results: HiSIM-HV Results
I d [
A]
Vds=20V
Vds=10V
Vds=5V
Vds=0.1Vg
m [
S]
Accuracy Comparison of Id-Vgs
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Quasi-saturation behavior of LDMOS is reproduced.
: 2D-Device Simulation Results: HiSIM-HV Results
I d [
A]
Vgs=2.5V
Vgs=5V
Vgs=7.5V
Vgs=10V
gd [
S]
Accuracy Comparison of Id-Vds
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Ldrift = 1.5m Vds = 10V
inv
gs
QV
driftC
invdrift
gs
QC
V
Charge in the drift region is modeled explicitly.
Vgs [V] Vgs [V]
Reproduction of Key Capacitance Features
HV
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Cap
acit
ance
[fF
]Vgs [V]
Reproduction of Intrinsic Capacitances
-4 -2 0 2 4
2.0
1.8
1.2
0.8
0.4
Vgs [V]
Cap
acit
ance
[fF
]
Cgb
Cgg
Cgd
CgsVds=0V
AsymmetricalLDMOS
SymmetricalHVMOS
HiSIM-HV is capable to reproduce all intrinsic capacitances with good accuracy.
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n- (base)
Schematic structure of a modern trench-IGBT
Simplified circuit diagram of the HiSIM-IGBT model
Consistent potential extension in HiSIM-IGBT is achieved by calculation based on Kirchhoff’s laws.
Concept of the HiSIM-IGBT Compact Model
Jn
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Fitting Results for the I-V Characteristics of the IGBT
HiSIM-IGBT achieves accurate reproduction of the IGBT’s I-V characteristic and also scales with the base
doping.M. Miyake et al., “A Consistently Potential Distribution Oriented Compact IGBT Model”,
IEEE PESC, pp. 998-1003, June 2008
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Outline of Presentation
1. Introduction2.Modeling Based on a Consistent Potential Dist
ribution3.Bulk MOSFET Model HiSIM24.Silicon-On-Insulator (SOI) MOSFET5.Double-Gate MOSFET6.MOS Varactor7.High-Voltage Devices
High-Voltage MOSFET Insulated Gate Bipolar Transistor (IGBT)
8.Thin-Film Transistor (TFT)9.Conclusion
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Typical structure of the poly-Si TFT
Channel
Insulating Substrate
poli-Si layer
Gate Insulator
Gate Electorode
Source Drain
Back side potentialis floating.
Traps deteriorateI-V characteristics.
Channel
Insulating Substrate
poli-Si layer
Gate Insulator
Gate Electorode
Source Drain
Back side potentialis floating.
Traps deteriorateI-V characteristics.
1.E-13
1.E-11
1.E-09
1.E-07
1.E-05
-2 -1 0 1 2 3 4Vg(V)
Id(A) large
trap density
1.E-13
1.E-11
1.E-09
1.E-07
1.E-05
-2 -1 0 1 2 3 4Vg(V)
Id(A) large
trap density
Concept of the Thin-Film-Transistor (TFT) Model
Effect of Traps on the I-V characteristic
(6) 1
exp1
exp0
E
ECE
E
ECENNNN fnfntKTATDt
(5) tan 0_
01 EfnEfnEfn
ETOX
VVECE MINMAX
Ks
SFBgsfn
(1) 2 TATDADSi
NNNNnpq
TFT modeling is
based on including the trap charge in the
Poisson equation. S. Miyano et al., “A surface potential based Poly-TFT model for circuit simulation”, IEEE SISPAD, Sept. 2008
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Accurate reproduction of I-V characteristic and scaling with gate length is achieved.
1.E-10
1.E-08
1.E-06
1.E-04
1.E-02
1.E+00
-5 -3 -1 1 3 5Vgs(V)
Ids(
a.u.
)
measurements simulations
L=2μ m
0.0
2.0
4.0
6.0
0 1 2 3Vds(V)
Ids(a.u.)
measurements simulations
L=2μ m
1.E-10
1.E-08
1.E-06
1.E-04
1.E-02
1.E+00
-5 -3 -1 1 3 5Vgs(V)
Ids(
a.u.
)
measurements simulations
L=0.5μ m
0.0
1.0
2.0
3.0
4.0
5.0
0 1 2 3Vds(V)
Ids(
a.u.
)
measurements simulations
L=0.5μ m
Reproduction of Fabricated TFT-Device Data
S. Miyano et al., “A surface potential based Poly-TFT model for circuit simulation”, IEEE SISPAD, Sept. 2008
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Conclusion
● HiSIM2 is a compact surface-potential-based MOSFET model with a minimum number of approximations, due to its iterative surface-potential determination.
● HiSIM2 allows to preserve a consistent potential-based modeling in its extension toother integrated-device structures containing aMOSFET core.
A compact-model family covering all integrated devices containing a MOSFET core and sharing the
same modeling concepts could be developed.