MonolithIC 3D Inc., Patents Pending MonolithIC 3D ICs October 2012 1 MonolithIC 3D Inc., Patents...

MonolithIC 3D Inc. , Patents Pending

MonolithIC 3D ICs

October 2012

1MonolithIC 3D Inc. , Patents Pending

MonolithIC 3D Inc. Patents Pending 2

Chapter 1Monolithic 3D

3D ICs at a glance

A 3D Integrated Circuit is a chip that has active electronic components stacked on one or more layers that are integrated both vertically and horizontally forming a single circuit.

Manufacturing technologies:-Monolithic-TSV based stacking-Chip Stacking w/wire bonding

MonolithIC 3D Inc, Patents Pending 3

MonolithIC 3D

A technology breakthrough allows the fabrication of semiconductor devices with multiple thin tiers (<1um) of copper connected active devices utilizing conventional fab equipment. MonolithIC 3D Inc. offers solutions for logic, memory and electro-optic technologies, with significant benefits for cost, power and operating speed.

MonolithIC 3D Inc. , Patents Pending 4

Comparison of Through-Silicon Via (TSV) 3D Technology and Monolithic 3D Technology

The semiconductor industry is actively pursuing 3D Integrated Circuits (3D-ICs) with Through-Silicon Via (TSV) technology (Figure 1). This can also be called a parallel 3D process.

As shown in Figure 2, the International Technology Roadmap for Semiconductors (ITRS) projects TSV pitch remaining in the range of several microns, while on-chip interconnect pitch is in the range of 100nm.

The TSV pitch will not reduce appreciably in the future due to bonder alignment limitations (0.5-1um) and stacked silicon layer thickness (6-10um).

While the micron-ranged TSV pitches may provide enough vertical connections for stacking memory atop processors and memory-on-memory stacking, they may not be enough to significantly mitigate the well-known on-chip interconnect problems.

Monolithic 3D-ICs offer through-silicon connections with <50nm diameter and therefore provide 10,000 times the areal density of TSV technology.



Typical TSV process

TSV diameter typically ~5um Limited by alignment accuracy and silicon thickness

Processed Top Wafer

Processed Bottom Wafer

Align and bond

TSVTSV

Figure 1

Two Types of 3D Technology

7

3D-TSVTransistors made on separate wafers @ high temp., then thin + align + bond

TSV pitch > 1um*

Monolithic 3DTransistors made monolithically atop

wiring (@ sub-400oC for logic)

TSV pitch ~ 50-100nm

10um-50um 100

nm

* [Reference: P. Franzon: Tutorial at IEEE 3D-IC Conference 2011]

Figure 2ITRS Roadmap compared to monolithic 3D


TSV (parallel) vs. Monolithic (sequential)


Source: CEA Leti Semicon West 2012 presentation

The Monolithic 3D Challenge

Once copper or aluminum is added on for bottom layer interconnect, the process temperatures need to be limited to less than 400ºC !!! Forming single crystal silicon requires ~1,200ºC Forming transistors in single crystal silicon requires ~800ºC

The TSV solution overcame the temperature challenge by forming the second tier transistors on an independent wafer, then thinning and bonding it over the bottom wafer (‘parallel’)

The limitations: Wafer to wafer misalignment ~ 1µ Overlaying wafer could not be thinned to less than 50µ

The Monolithic 3D Innovation

Utilize Ion-Cut (‘Smart-Cut’) to transfer a thin (<100nm) single crystal layer on top of the bottom (base) wafer Form the cut at less than 400ºC *

Use co-implant Use mechanically assisted cleaving

Form the bonding at less than 400ºC ** See details at: Low Temperature Cleaving, Low Temperature Wafer

Direct Bonding

Split the transistor processing to two portions High temperature process portion (ion implant and activation) to be

done before the Ion-Cut Low temperature (<400°C) process portion (etch and deposition) to be

done after layer transferSee details in the following slides:

Monolithic 3D ICs

Using SmartCut technology - the ion cutting process that Soitec uses to make SOI wafers for AMD and IBM (millions of wafers had utilized the process over the last 20 years) - to stack up consecutive layers of active silicon (bond first and then cut). Soitec’s Smart Cut Patented* Flow (follow this link for video).


*Soitec’s fundamental patent US 5,374,564 expired Sep. 15, 2012

Monolithic 3D ICs

Ion cutting: the key idea is that if you implant a thin layer of H+ ions into a single crystal of silicon, the ions will weaken the bonds between the neighboring silicon atoms, creating a fracture plane (Figure 3). Judicious force will then precisely break the wafer at the plane of the H+ implant, allowing you to in-effect peel off very thin layer. This technique is currently being used to produce the most advanced transistors (Fully Depleted SOI, UTBB transistors – Ultra Thin Body and BOX), forming monocrystalline silicon layers that are less than 10nm thick.


Figure 3Using ion-cutting to place a thin layer of monocrystalline silicon

above a processed (transistors and metallization) base wafer


p- Si

Oxide

p- Si

OxideH

Top layer

Bottom layer

Oxide

Hydrogen implant

of top layerFlip top layer and

bond to bottom layer

Oxide

p- Si

Oxide

H

Cleave using <400oC

anneal or sideways

mechanical force.

CMP.

OxideOxide

Similar process (bulk-to-bulk) used for manufacturing all SOI wafers today

p- Si


Chapter 2Monolithic 3D RCAT

MonolithIC 3D – The RCAT path

The Recessed Channel Array Transistor (RCAT) fits very nicely into the hot-cold process flow partitionRCAT is the transistor used in commercial DRAM as its 3D channel overcomes the short channel effect

Used in DRAM production @ 90nm, 60nm, 50nm nodesHigher capacitance, but less leakage, same drive current

The following slides present the flow to process an RCAT without exceeding the 400ºC temperature limit


RCAT – a monolithic process flow


Wafer, ~700µm

~100nm

P-

N+P-

Using a new wafer, construct dopant regions in top ~100nm and activate at ~1000º C

Oxide


~100nm

P-

N+P-

Oxide

Implant Hydrogen for Ion-Cut

H+

Wafer, ~700µm


~100nm

P-

N+P-

~10nm H+

Oxide

Hydrogen cleave plane for Ion-Cut formed in donor wafer

Wafer, ~700µm


~100nm N+P-

Oxide

1µ Top Portion ofBase Wafer

H+

Flip over and bond the donor wafer to the base (acceptor) wafer

Base Wafer, ~700µm

Donor Wafer, ~700µm

MonolithIC 3D Inc. Patents Pending

21

~100nm N+P-

Oxide


Perform Ion-Cut Cleave

Base Wafer ~700µm

22

~100nm N+P-

Oxide



Complete Ion-Cut

Base Wafer ~700µm

23

~100nm N+P-

Oxide



Etch Isolation regions as the first step to define RCAT transistors

Base Wafer ~700µm

24

~100nm N+P-

Oxide



Fill isolation regions (STI-Shallow Trench Isolation) with Oxide, and CMP

Base Wafer ~700µm

25

~100nm N+P-

Oxide



Etch RCAT Gate Regions

Base Wafer ~700µm

Gate region

26

~100nm N+P-

Oxide



Form Gate Oxide

Base Wafer ~700µm

27

~100nm N+P-

Oxide



Form Gate Electrode

Base Wafer ~700µm

28

~100nm N+P-

Oxide



Add Dielectric and CMP

Base Wafer ~700µm

29

~100nm N+P-

Oxide



Etch Thru-Layer-Via and RCAT Transistor Contacts

Base Wafer ~700µm

30

~100nm N+P-

Oxide



Fill in Copper

Base Wafer ~700µm

31

~100nm N+P-

Oxide1µ Top Portion of

Base (acceptor) Wafer


Add more layers monolithically

Base Wafer ~700µm

Oxide

~100nm N+P-


Chapter 3Monolithic 3D HKMG


The monolithic 3D IC technology is applied to produce monolithically stacked high performance High-k Metal Gate (HKMG) devices, the world’s most advanced production transistors.

3D Monolithic State-of-the-Art transistors are formed with ion-cut applied to a gate-last process, combined with a low temperature face-up layer transfer, repeating layouts, and an innovative inter-layer via (ILV) alignment scheme.

Monolithic 3D IC provides a path to reduce logic, SOC, and memory costs without investing in expensive scaling down.

Technology


~700µm Donor Wafer

On the donor wafer, fabricate standard dummy gates with oxide and poly-Si; >900ºC OK

PMOSNMOS

Silicon

PolyOxide


~700µm Donor Wafer

Form transistor source/drain

PMOSNMOS

Silicon

PolyOxide


~700µm Donor Wafer

PMOSNMOS

Silicon

Form inter layer dielectric (ILD), S/D implants and high temp anneals, CMP to transistor tops

CMP to top of dummy gatesILDS/D Implant


~700µm Donor Wafer

PMOSNMOS

Silicon

Implant hydrogen to generate cleave plane


~700µm Donor Wafer

PMOSNMOS

Silicon



~700µm Donor Wafer

PMOSNMOS

Silicon


H+


~700µm Donor Wafer

Silicon

Bond donor wafer to carrier wafer

H+

~700µm Carrier Wafer


~700µm Donor Wafer

Cleave to remove bulk of donor wafer

H+


Transferred Donor Layer

Silicon

Silicon


CMP to STI


STITransferred

Donor Layer


Deposit oxide, ox-ox bond carrier structure to base wafer that has transistors & circuits


STI

Oxide-oxide bond

PMOSNMOS


Base Wafer

44

Remove carrier wafer

Oxide-oxide bond




PMOSNMOSBase Wafer

45

Carrier wafer had been removed

Oxide-oxide bond



PMOSNMOSBase Wafer

46

Replace dummy gate stacks with Hafnium Oxide & metal at low temp

Oxide-oxide bond



PMOSNMOSBase Wafer

Note: Replacing oxide and gate result in oxide and gate that were not damaged by the H+ implant

47

Form inter layer via through oxide only (similar to standard via)

Oxide-oxide bond



PMOSNMOSBase Wafer

Note: The second mono-crystal layer is very thin (<100nm) and via through it, is similar to other vias in the metal stack


Form top layer interconnect and connect layers with inter layer via

Oxide-oxide bond



PMOSNMOSBase Wafer

ILV


• Maximum State-of-the-Art transistor performance on multi-strata

• 2x lower power• 2x smaller silicon area• 4x smaller footprint• Performance of single crystal silicon transistors on all

layers in the 3DIC• Scalable: scales normally with equipment capability• Forestalls next gen litho-tool risk• High density of vertical interconnects enable innovative

architectures, repair, and redundancy

Benefits for RCAT and HKMG

MonolithIC 3D Inc., Patents Pending MonolithIC 3D ICs October 2012 1 MonolithIC 3D Inc., Patents...

Documents

Transcript of MonolithIC 3D Inc., Patents Pending MonolithIC 3D ICs October 2012 1 MonolithIC 3D Inc., Patents...