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    Abstract--The designer of power converters must model the

    losses of converter switches to optimize the performance of

    system. In this paper, the losses of three-phase SPWM VSC are

    modeled using switching function concept. This model is

    simulated and its results are compared with accurate method,

    which is based on the semiconductor characteristics. It is shown

    that the suggested method includes simplicity, convergence, and

    short run-time of simulation.

    Index Terms--Three-Phase SPWM VSC, Switching Function,

    Conduction Losses, Switching Losses.

    I. INTRODUCTION

    N RECENT YEARS, voltage source converters (VSCs) are

    widely used as static power converter in AC drives, HVDC

    light transmission, FACTS devices, and etc.

    The basic elements used in VSC are IGBTs and diodes.

    Because of economical and technical importance of powerdissipation, the designers must consider and minimize the

    losses of these devices [1]-[5].

    The losses of a switching device can be classified in three

    groups: off-state, conduction, and switching losses. The

    leakage current during the off-state is negligibly small

    therefore the power losses during this state can be neglected.

    As a result, only conduction and switching losses must be

    exactly modeled [1]-[5].

    There are several methods to model these losses. In the case

    of modeling with PSPICE and SABER, the converter circuits

    can be schematically expressed by using actual power

    semiconductor device models and passive elements [6]-[9]. In

    the case of modeling with MATLAB, the proper stateequations should be obtained in order to describe the power

    converter circuit [6]-[9]. However, these models have shown a

    number of problems. These problems include complexity,

    slow execution times, large amount of generated data, andconvergence [6]-[9].

    To understand and to optimize the performance of power

    converters, it is shown that the switching function concept is a

    powerful tool which can overcome the mentioned problems

    [6].

    The authors are with the Department of Electrical Engineering, Amirkabir

    University of Technology (Tehran Polytechnic), No 424, Hafez Ave., 15914

    Tehran, Iran (e-mail: [email protected]; [email protected]).

    In this paper, for a three-phase SPWM VSC system the

    different modelling methods of conduction and switching

    losses based on switching function concept are presented and

    compared.

    II. SWITCHING FUNCTION THEORY

    According to the operation mode of the static power

    converters, they can be modeled as a block box with the DC

    and AC, input and output variables. The transfer function of

    this model should describe the performance of the converter

    [6]-[8].

    The transfer function can be used to compute, e.g., the

    output voltage of VSC (a dependent variable) in terms of the

    input voltage (which is an independent variable) [6]-[8].

    Fig. 1(a) and (b) show the detailed configuration and black

    box presentation of three-phase VSC, respectively. Based on

    the switching function theory input current (Iin) and output

    voltage (Vab, Vbc and Vca) are the dependent variables andinput voltage (Vd) and output current (Ia, Ib, and Ic) are the

    independent variables. The relationship between the input and

    output variables can be written as follows:

    [Vab, Vbc, Vca]=TF. Vd (1)

    Iin=TF. [Ia, Ib, Ic]T

    (2)

    where TFis the transfer function of three-phase VSC.

    Generally, the transfer function consists of the several

    switching function, e.g.:

    TF= [SF1, SF2, SF3 ]

    In order to define switching functions, a switching control

    strategy must be selected. In this paper, the sinusoidal PWM

    (SPWM) control strategy (Fig. 2(a)) result in the two

    switching functions (SF1, SF2), which are shown in Fig. 2(b)

    and (c).

    The switching function SF1 expresses the Vao, Vbo and Vco

    and it is used to calculate the converter line-to-line voltages

    (Vab, Vbc and Vca) and phase voltages (Van, Vbn and Vcn). The

    switching function, SF2 designates the voltage across the

    switch and the load current (Ia, Ib and Ic). SF1 and SF2 can be

    written as follows:

    =

    =1

    1 )sin(n

    n tnASF (4)

    =+= 1

    02 )sin(n

    n tnBBSF (5)

    Modeling of Switching and Conduction Losses

    in Three-Phase SPWM VSC Using Switching

    Function ConceptM. G. Hosseini Aghdam and G. B. Gharehpetian

    I

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    Fig. 1. (a) Detailed and (b) Black box presentation of three-phase VSC

    III. FUNCTIONAL MODEL

    Fig. 3 shows the functional model of three-phase SPWM

    VSC. This model consists of nine functional blocks based on

    the switching functions SF1 and SF2. The system losses of this

    model can be calculated.

    To generate the two switching function signals (SF1 and

    SF2) for each phase, in the SPWM block, the carrier signal

    (Vcarrier) is compared with three different reference signals

    (Vref_a, b, c

    ) and process in the switching function block.

    Using the switching function SF1, the Vao, Vbo and Vco can be

    obtained as follows:

    =

    ==1

    1)sin(.

    2.

    2 nn

    d

    a

    d

    aotnA

    VSF

    VV

    =

    ==1

    1)120(sin.

    2.

    2 nn

    d

    b

    d

    botnA

    VSF

    VV

    =

    +==1

    1)120(sin.

    2.

    2 nn

    d

    c

    d

    cotnA

    VSF

    VV (6)

    Then, the inverter line-to-line voltages (Vab Vbc and Vca) can be

    derived.

    =

    +==1

    )30(sin.2

    3

    n

    ndboaoabtnAVVVV

    =

    ==1

    )90(sin.2

    3

    n

    ndcobobctnAVVVV

    =

    +==1

    )150(sin.2

    3

    n

    ndaococatnAVVVV (7)

    Also, in order to calculate the inverter phase voltages (Van, Vbn

    and Vcn

    ), Vno

    must be calculated.

    )(3

    1coboaono

    VVVV ++= (8)

    Now the phase voltages, i.e. the output of the converter block

    in Fig. 3, (Van ,Vbn and Vcn), can be derived as follows:

    Van=Vao-Vno

    Vbn=Vbo-VnoVan=Vco-Vno (9)

    Assuming a balanced R-L load, the load currents (Ia, Ib and Ic)

    are obtained.

    LjR

    V

    Z

    VI an

    a

    an

    an+

    ==

    LjR

    V

    Z

    VI bn

    b

    bn

    bn+

    ==

    LjR

    V

    Z

    VI can

    c

    cn

    cn+

    == (10)

    Then, the switch currents (IS1, IS3and IS5) can be calculated.

    IS1=Ia. SF2-aIS3=Ib. SF2-bIS5=Ic. SF2-c (11)

    The switch current (IS1) can be determined as follows:

    IS1=IS1-S-IS1-D (12)

    where IS1-Sand IS1-Dare the pure switch current and the pure

    diode current the switch S1, respectively.

    Now, the converter input current (Iin) can be obtained by

    following equation.

    Iin=IS1+IS3 +IS5 (13)

    Fig. 2. SPWM control strategy and switching functions, (a) Carrier (Vcarrier)

    and reference (Vref_a) signals, switching functions (b) SF1 and (c) SF2

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    Fig. 3. The model of three-phase SPWM VSC.

    IV. SWITCHING AND CONDUCTION LOSSES

    As it can be seen in Fig. 3, two methods of (a) and (b)have been used to calculate the switching and conduction

    losses.

    In the method (a) the power dissipation during

    conduction is computed by multiplying the on-state

    saturation voltage (von) by the on-state current (ic).

    onc

    vip .= (14)

    The absolute value of the on-state current is used in the

    above equation, because this current is always positive,

    regardless of the direction of load current.

    The von voltage can be approximated by [1]-[3]:

    conoon

    iRVv .+= (15)

    Where Vo is the threshold voltage and Ron is the equivalentresistance of the resistive components presenting voltage

    drop across the power device.

    The average conduction losses of each device is:

    =

    dpPlossconductionavg

    .2

    1.

    (16)

    In the method (a), since the DC link voltage in VSC is

    constant, switching energy can be assumed to be a linear

    function of current [1]-[5]. Then, the average switching

    losses for diode and controllable switch can be written as

    follows:

    =

    dfiEPccreclossswitchingavgD...

    2

    1.

    (17)

    +=

    dfiEEPccoffonlossswitchingavgS..).(

    2

    1.

    (18)

    Where fc is switching frequency, Erec[J/A], Eon[J/A] and

    Eoff[J/A] are reverse-recovery energy coefficient, turn-on

    switching energy coefficient and turn-off switching energy

    coefficient, respectively. It must be noted that since diode

    turns on rapidly (compared to the controllable switch) the

    switching energy of diode at turn-on can be neglected.

    In the other method, i.e. method (b), the conduction

    losses are computed by multiplying the on-state voltage by

    the on-state current. The on-state voltage is a function of

    switch current, gate voltage of IGBT, and etc. Fig. 4(a)

    shows the collector current versuscollector-emitter voltage

    of IGBT (SKM 400 GB 124D [10]). Fig. 4 (b) shows the

    V-Icharacteristic of the diode. These curves can be

    approximated by the following equations.

    >+

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    The most accurate method of switching losses

    calculation is the current and voltage waveforms

    determination during transitions. The point by point

    multiplication of these curves results in the accurate data

    [1]. The area under the power waveform is the switching

    energy at turn-on or turn-off transitions. Fig. 5 shows theswitching energy versus switch current for IGBT and diode

    (SKM 400 GB 124D [10]). These curves are approximate

    by:

    Erec-diode=0.0001I2

    D+0.073ID+0.2111 (21)

    Eon-switch=0.0002I2

    S+0.0497IS+6.4364 (22)

    Eoff-switch=0.1309I2

    S+3.8182 (23)

    (a)

    (b)

    Fig. 5. (a) IGBT turn-on/turn-off energy and (b) Diode turn-off energy.

    V. SIMULATION RESULTS

    The model, shown in Fig. 1 is simulated with the

    following parameters:

    DC-link input voltage: Vd=300V,

    Load: R=5 and L=20mH,Carrier and reference signals frequencies: 1 kHzand 50 Hz,

    Modulation index=0.8 and

    IGBT type: SKM 400 GB 124D [10].

    As shown in Figures 6 and 7, using functional model

    (Fig. 3) the switching functions SF1 and SF2 and then, the

    converter phase voltage (Van) and line-to-line voltage (Vab)

    can be successfully obtained.

    Figures 8-10 show the converter current waveforms. Fig.

    8 (a) shows the three balanced load currents (Ia, Ib and Ic)

    under the balanced load condition. According to equation

    (11), the switch S1 current can be calculated as shown in

    Fig. 8 (b). The pure switch current (IS1-S) and pure diode

    current (IS1-D) are shown in Fig. 9 (a) and (b). Fig. 10shows the converter input current.

    Figures 11 and 12 present the VSC losses which are

    calculated based on method (a). Fig. 11 (a) and (b) show

    the conduction losses and figures 12 (a), (b) and (c) show

    the switching losses in IGBT and diode, respectively.

    The results of the calculations based on method (b) are

    given in figures 13 and 14. Fig. 13 (a) and (b) show the

    conduction losses and figures 14 (a), (b) and (c) show the

    switching losses in IGBT and diode, respectively.

    As it can be seen from simulation results of the both

    methods, i.e. figures 11-14, the method (a) presents the

    same accuracy as the method (b) and also it is simple to

    model, has a fast execution time with MATLAB and has

    not any convergence problem.

    Fig. 6. Switching functions SF1 and SF2with the SPWM control.

    Fig. 7. Voltage waveforms of VSC with the SPWM control, (a) phase

    voltage (Van) and (b) Line-to-Line voltage (Vab).

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    Fig. 8. Current waveforms of VSC with the SPWM control, (a) load

    currents (Ia, Ib and Ic) and (b) switch current (Is).

    Fig. 9. Current waveforms of VSC with the SPWM control, (a) pure

    switch current (Is-S) and (b) pure diode current (Is-D).

    Fig. 10. Inverter input current (Iin)

    Fig. 11. Conduction losses of SPWM VSC; method (a), (a) switch (IGBT)

    conduction losses [mJ] and (b) diode conduction losses [mJ].

    Fig. 12. Switching losses of SPWM VSC; method (a), (a) switch (IGBT)

    turn-on switching losses [mJ], (b) switch (IGBT) turn-off switching losses

    [mJ] and (c) diode turn-off switching losses [mJ].

    Fig. 13. Conduction losses of SPWM VSC; method (b), (a) switch (IGBT)conduction losses [mJ] and (b) diode conduction losses [mJ].

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    Fig. 12. Switching losses of SPWM VSC; method (b), (a) switch (IGBT)

    turn-on switching losses [mJ], (b) switch (IGBT) turn-off switching losses

    [mJ] and (c) diode turn-off switching losses [mJ].

    VI. CONCLUSION

    Based on switching function concept, the losses of three-

    phase SPWM VSC has been modeled. The simulation

    results of this model are compared with the method which

    is based on IGBT and diode characteristics modeling. The

    simulation results verify the accuracy of the suggested

    method. It is shown that this method is simple to model and

    has a short run-time of simulation, too.

    VII. REFERENCES

    [1] T. J. Kim, D. W. Kong, Y. H. Lee, and D. S. Hyun, "The Analysis of

    Conduction and Switching Losses in Multilevel-Inverter System", Power

    Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual,

    Vol.3 pp. 1363-1368.

    [2] K. Berringer, J. Marvin, and P. Perruchoud, "Semiconductor Power

    Losses in AC Inverters", in Conf. Rec. IEEE-IAS Annu. Meeting, 1995, pp.

    882-888.

    [3] F. Casanellas, "Losses in PWM Inverters Using IGBTs", Proc. IEEE-

    Elect. Power Applications, Vol. 144, No. 5, Sept. 1994, pp. 235-239.

    [4] P. A. Dahono, Y. Sato, and, T. Kataoka, ''Analysis of Conduction

    Losses in Inverters", Proc. IEEE-Elect. Power Applications, Vol. 142, No.

    4, July 1995, pp. 225-232

    [5] H. van der Broeck, "Analysis of the Harmonic in Voltage-Fed Inverter

    Drive Caused by PWM Schemes with Discontinuous Switching

    Operation", EPE'91, Conf. Proceedings, Vol. 3, 1991, pp. 261-266.

    [6] B. K. Lee, and M. Ehsani, "A Simplified Functional Simulation Model

    for Three-Phase Voltage-Source Inverter Using Switching FunctionConcept", IEEE Trans. Industrial Electronics, Vol. 48, No. 2, April 2001,

    pp. 309-321.

    [7] P. D. Ziogas, E. P. Wiechmann, and V. R. Stefanovic, "A Computer-

    Aided Analysis and Design Approach for Static Voltage Source Inverter",

    IEEE Trans. Industry Applications, Vol. IA-21, Sept. /Oct. 1985, pp. 1234-

    1241.

    [8] E. P. Wiechmann, P. D. Ziogas, and V. R. Stefanovic, "Generalized

    Functional Model for Three-Phase PWM Inverter/Rectifier Converters", in

    Conf. Rec. IEEE-IAS Annu. Meeting, 1985, pp. 984-993 .

    [9] L. Salazar, and G. Joos, "PSPICE Simulation of Three-Phase Inverter

    by Means of Switching Functions", IEEE Trans. Power Electronics, Vol.

    9, Jan. 1994, pp. 35-42.

    [10] www.semicron.com/Products/IGBT/ SKM 400 GB 124D.

    VIII. BIOGRAPHIES

    M. Ghasem Hosseini Aghdam was born in

    Shabestar, Iran on September 21, 1978. He

    received the B.Sc. degree in electrical

    engineering from Tabriz University, Tabriz,

    Iran, in 2000, and received the M.Sc. degreein electrical engineering from Amirkabir

    University of Technology (Tehran

    Polytechnic), Tehran, Iran, in 2003. He is

    currently working toward the Ph.D. degree

    at Amirkabir University of Technology

    (Tehran Polytechnic), Tehran, focusing on

    control and modulation of multilevel converters.

    His research interests include modulation theory, multilevel

    converters, and fundamental principles for power electronic

    converters.Gevorg B. Gharehpetian was born in

    Tehran, in 1962. He received his B.Sc. and

    M.Sc. degrees in electrical engineering in

    1987 and 1989 from Tabriz University,

    Tabriz, Iran and Amirkabir University of

    Technology (AUT), Tehran, Iran,respectively, graduating with First Class

    Honors. In 1989 he joined the Electrical

    Engineering Department of AUT as a

    lecturer. He received the Ph.D. degree in

    electrical engineering from Tehran

    University, Tehran, Iran, in 1996. As a

    Ph.D. student he has received scholarship from DAAD (German Academic

    Exchange Service) from 1993 to 1996 and he was with High Voltage

    Institute of RWTH Aachen, Aachen, Germany. He held the position of

    Assistant Professor in AUT from 1997 to 2003, and has been Associate

    Professor since 2004.

    Dr. Gharehpetian is a Senior Member of Iranian Association of Electrical

    and Electronics Engineers (IAEEE), member of IEEE and member of

    central board of IAEEE. Since 2004 he is the Editor-in-Chief of the

    Journal of IAEEE.

    The power engineering group of AUT has been selected as a Center ofExcellence on Power Systems in Iran since 2001. He is a member of this

    center and since 2004 the Research Deputy of this center.

    He is the author of more than 120 journal and conference papers. His

    teaching and research interest include power system and transformers

    transients, FACTS devices and HVDC transmission.