Modeling of SiGe material for ultra-scaled CMOS 2 device … · 2008. 12. 4. · Ge fraction Alloy...
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www.c2s2.org 2010 MSD Annual Review Modeling of SiGe material for ultra-scaled CMOS device applications A. Paul, S. R. Mehrotra, Z. Jiang, M. Luisier and G. Klimeck Purdue University and NCN 4 2 3 1 5 6 9 8 7 10 11 12 Why SiGe material ? Electronic Structure : VCA method Transport in Core/Shell SiGe/Si – TB VCA Random Alloy Treatment (RAT) SiGe bond length benchmarking Bulk SiGe bandedges using supercell Alloy Scattering Alloy Scattering Potentials from RAT Transport in Alloy: Green’s Function Comparison of Transmission Transmission to terminal characteristics Conclusion and Future Work
Transcript of Modeling of SiGe material for ultra-scaled CMOS 2 device … · 2008. 12. 4. · Ge fraction Alloy...
www.c2s2.org
2010 MSD Annual Review
Modeling of SiGe material for ultra-scaled CMOS device applications
A. Paul, S. R. Mehrotra, Z. Jiang, M. Luisier and G. Klimeck Purdue University and NCN
4
2 3 1
5 6
9 8 7
10 11 12
Why SiGe material ? Electronic Structure : VCA method Transport in Core/Shell SiGe/Si – TB VCA
Random Alloy Treatment (RAT) SiGe bond length benchmarking Bulk SiGe bandedges using supercell
Alloy Scattering Alloy Scattering Potentials from RAT Transport in Alloy: Green’s Function
Comparison of Transmission Transmission to terminal characteristics Conclusion and Future Work