MJ11030
3
Prelim. 2/96 LAB SEME NPN MJ11028 MJ11030 MJ11032 PNP MJ11029 MJ11031 MJ11033 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk V CEO Collector – Emitter Voltage V CBO Collector – Base Voltage V EBO Emitter – Base Voltage I C Continuous Collector Current I CM Peak Collector Current I B Base Current P tot Total Dissipation at T case = 25°C Derate above 25°C T STG , T J Operating and Storage Junction Temperature Range 60V 60V 90V 90V 120V 120V MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 5V 50A 100A 2A 300W 1.71W/°C –55 to +175°C MECHANICAL DATA Dimensions in mm (inches) 1 2 30.15 (1.187) 16.89 (0.665) 10.92 (0.430) 25.4 (1.0) 4.0 ± 0.1 (0.157 ± 0.004) 1.57 (0.062) 11.65 ± 0.35 (0.459 ± 0.014) +0.016 –0 (0.161 ) 4.1 +0.4 –0 9.0 (0.354) 0.127 (0.005) unless otherwise stated Tolerance ± COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES • HIGH DC CURRENT GAIN H FE = 1000 Min @ I C = 25A H FE = 400 Min 0@ I C = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED I C • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C Pin 1 – Base TO–3 Pin 2 – Emitter Case – Collector ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated) APPLICATIONS For use as output devices in complementary general purpose amplifier applications.
Transcript of MJ11030
Prelim. 2/96
LABSEME
NPN
MJ11028MJ11030MJ11032
PNP
MJ11029MJ11031MJ11033
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: [email protected] Website: http://www.semelab.co.uk
VCEO Collector – Emitter Voltage
VCBO Collector – Base Voltage
VEBO Emitter – Base Voltage
IC Continuous Collector Current
ICM Peak Collector Current
IB Base Current
Ptot Total Dissipation at Tcase = 25°C
Derate above 25°C
TSTG , TJ Operating and Storage Junction Temperature Range
60V
60V
90V
90V
120V
120V
MJ11028MJ11029
MJ11030MJ11031
MJ11032MJ11033
5V
50A
100A
2A
300W
1.71W/°C
–55 to +175°C
MECHANICAL DATADimensions in mm (inches)
1 230.1
5(1
.187
)
16.8
9(0
.665
)
10.92(0.430)
25.4(1.0)
4.0 ± 0.1(0.157 ± 0.004)
1.57(0.062)
11.65 ± 0.35(0.459 ± 0.014)
+0.016–0 (0.161 )
4.1 +0.4–0
9.0(0.354)
0.127 (0.005) unless otherwise statedTolerance ±
COMPLEMENTARYDARLINGTON
POWER TRANSISTOR
FEATURES• HIGH DC CURRENT GAIN
HFE = 1000 Min @ IC = 25AHFE = 400 Min 0@ IC = 50A
• CURVES TO 100A (Pulsed)
• DIODE PROTECTION TO RATED IC• MONOLITHIC CONSTRUCTION WITH
BUILT-IN BASE – EMITTER SHUNT RESISTOR
• JUNCTION TEMPERATURE TO +200°C
Pin 1 – Base
TO–3Pin 2 – Emitter Case – Collector
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
APPLICATIONSFor use as output devices in complementary
general purpose amplifier applications.
Prelim. 2/96
LABSEME
NPN
MJ11028MJ11030MJ11032
PNP
MJ11029MJ11031MJ11033
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: [email protected] Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
IC = 100mA
IB = 0
VCE = 60V
RBE = 1kW TC = 150°C
VCE = 90V
RBE = 1kW TC = 150°C
VCE = 120V
RBE = 1kW TC = 150°C
VBE = 5V IC = 0
VCE = 50V
IB = 0
VCE = 5V IC = 25A
VCE = 5V IC = 50A
IC = 25A IB = 250mA
IC = 50A IB = 500mA
IC = 25A IB = 200mA
IC = 50A IB = 300mA
60
90
120
2
10
2
10
2
10
5
2
1000 18000
400
2.5
3.5
3.0
4.5
MJ11028 , MJ11029
MJ11030 , MJ11031
MJ11032 , MJ11033
MJ11028 , MJ11029
MJ11030 , MJ11031
MJ11032 , MJ11033
Collector – Emitter
Breakdown Voltage
Collector – Emitter
Leakage Current
Emitter Cut–Off Current
Collector – Emitter
Leakage Current
DC Current Gain
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
V(BR)CEO*
ICER
IEBO
ICEO
hFE*
VCE(sat)*
VBE(sat)*
V
mA
mA
mA
—
V
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
* Pulse Test: tp £ 300µs, d £ 2%.Figure 1 – DC Safe Operating Area
Figure 2 – DC Current Gain Figure 3 – “ON” Voltage
This datasheet has been download from:
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Datasheets for electronics components.
