Miniaturization and future prospects of Si devices€¦ · Miniaturization and future prospects of...
Transcript of Miniaturization and future prospects of Si devices€¦ · Miniaturization and future prospects of...
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Miniaturization and future prospects of Si devices
October 4, 2011
Hiroshi Iwai, Tokyo Institute of Technology
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G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists
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First Computer Eniac: made of huge number of vacuum tubes 1946 Big size, huge power, short life time filament
Today's pocket PC made of semiconductor has much higher performance with extremely low power consumption
dreamed of replacing vacuum tube with solid-state device
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Source Channel Drain
0V
N+-Si P-Si
N-Si
0V
1V
Negative
Source Channel Drain N-Si 1V
N+-Si P-Si
Surface Potential (Negative direction)
Gate Oxd
Channel Source Drain
Gate electrode
S D
G
0 bias for gate Positive bias for gate
Surface
Electron flow
Mechanism of MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
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1960: First MOSFET by D. Kahng and M. Atalla
Top View
Al
SiO2
Si
Si/SiO2 Interface is exceptionally good
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1970,71: 1st generation of LSIs
1kbit DRAM Intel 1103 4bit MPU Intel 4004
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2011 Most recent SD Card
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Most Recent SD Card
128GB (Bite) = 128G X 8bit = 1024Gbit = 1.024T(Tera)bit
1T = 1012 = 1Trillion
Brain Cell:10~100 Billion World Population:6 Billion
Stars in Galaxy:100 Billion
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Most Recent SD Card
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2.4cm X 3.2cm X 0.21cm
Volume:1. 6cm³ Weight:2g
Voltage:2.7 - 3.6V
Old Vacuum Tube: 5cm X 5cm X 10cm, 100g,100W
1Tbit = 10k X10k X 10k bit
Volume = 0.5km X 0.5km X 1km = 0.25 km3 = 0.25X1012cm3
Weight = 0.1 kgX1012 = 0.1X109ton = 100 M ton
Power = 0.1kWX1012=50 TW
Supply Capability of Tokyo Electric Power Company: 55 BW
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So, progress of IC technology is most important for the power saving!
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1900 1950 1960 1970 2000
Vacuum Tube
Transistor IC LSI ULSI
10 cm cm mm 10 µm 100 nm
In 100 years, the size reduced by one million times. There have been many devices from stone age. We have never experienced such a tremendous reduction of devices in human history.
10-1m 10-2m 10-3m 10-5m 10-7m
Downsizing of the components has been the driving force for circuit evolution
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Downsizing 1. Reduce Capacitance Reduce switching time of MOSFETs Increase clock frequency Increase circuit operation speed 2. Increase number of Transistors Parallel processing Increase circuit operation speed
Thus, downsizing of Si devices is the most important and critical issue. 12
Downsizing contribute to the performance increase in double ways
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Late 1970’s 1µm: SCE Early 1980’s 0.5µm: S/D resistance Early 1980’s 0.25µm: Direct-tunneling of gate SiO2
Late 1980’s 0.1µm: ‘0.1µm brick wall’(various)
2000 50nm: ‘Red brick wall’ (various)
2000 10nm: Fundamental?
Period Expected Cause limit(size)
Many people wanted to say about the limit. Past predictions were not correct!!
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Qi Xinag, ECS 2004, AMD 14
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5 nm gate length CMOS
H. Wakabayashi et.al, NEC
IEDM, 2003
Length of 18 Si atoms
Is a Real Nano Device!!
5 nm
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Source Channel Drain
N+-Si P-Si
N-Si
0V
1V
Negative
Surface Potential (Negative direction)
Gate Oxd
Channel Source Drain
Gate electrode
0 bias for gate
Surface
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Tunneling
3nm
@Vg=0V, Transistor cannot be switched off
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Tunneling distance
3 nm Lg = Sub-3 nm?
Below this, no one knows future!
Prediction now!
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Limitation for MOSFET operation
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Tunneling distance
3 nm
Atom distance
0.3 nm
Lg = Sub-3 nm?
Below this, no one knows future!
Prediction now!
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Limitation for MOSFET operation
Ultimate limitation
No one can make a MOSET below this size!
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How far we can go with downscaling?
Question:
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How far can we go for production?
10µm 8µm 6µm 4µm 3µm 2µm 1.2µm 0.8µm 0.5µm
0.35µm 0.25µm 180nm 130nm 90nm 65nm 45nm 32nm
1970年
(28nm) 22nm 16nm 11.5 nm 8nm 5.5nm? 4nm? 2.9 nm?
Past 0.7 times per 3 years Now In 40 years: 18 generations, Size 1/300, Area 1/100,000
Future
・At least 4,5 generations to 8nm
・Hopefully 8 generations to 3nm
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Vg
Id
Vth (Threshold Voltage)
Vg=0V
Subthreshould Leakage Current
Subtheshold leakage current of MOSFET
ON OFF
Ion
Ioff
Subthreshold region
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Vg (V)
10-7A
Vg = 0V
Vth = 300mV Vth = 100mV
Vth down-scaling
Subthreshold slope (SS) = (Ln10)(kT/q)(Cox+CD+Cit)/Cox > ~ 60 mV/decade at RT
SS value: Constant and does not become small with down-scaling
10-3A
10-4A
10-5A
Vdd=0.5V Vdd=1.5V
Ion
Ioff
Ioff
10-6A
10-8A
10-9A
10-10A Log
Id p
er u
nit g
ate
wid
th (=
1µm
)
Vdd down-scaling
Log scale Id plot
Ioff increases with 3.3 decades (300 – 100)mV/(60mv/dec) = 3.3 dec
Vth cannot be decreased anymore
Vth: 300mV 100mV
significant Ioff increase
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Vg
Id
Vth (Threshold Voltage)
Vg=0V
Subthreshould Leakage Current
Subtheshold leakage current of MOSFET
Subthreshold Current Is OK at Single Tr. level But not OK For Billions of Trs.
ON OFF
Ion
Ioff
Subthreshold region
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Subthreshold Leakage (A/µm)
Ope
ratio
n Fr
eque
ncy
(a.u
.)
e)
100
10
1
Source: 2007 ITRS Winter Public Conf.
The limit is deferent depending on application
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Scaling Method: by R. Dennard in 1974
1
1 Wdep
1 1
I
0 0 V 1
X , Y , Z : K, V : K, Na : 1/K
K
K
K Wdep
Wdep V /N a : K
K I
0 0 K V
I : K
K=0.7 for example
Wdep: Space Charge Region (or Depletion Region) Width
Wdep has to be suppressed Otherwise, large leakage between S and D
Leakage current
S D
By the scaling, Wdep is suppressed in proportion, and thus, leakage can be suppressed.
Good scaled I-V characteristics
Potential in space charge region is high, and thus, electrons in source are attracted to the space charge region.
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The down scaling of MOSFETs is still possible for another 10 years!
1. Thinning of high-k beyond 0.5 nm 2. Metal S/D
3. Wire channel
3 important technological items for DS.
Down scaling is the most effective way of Power saving.
New structures
New materials
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1. High-k beyond 0.5 nm
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By Robert Chau, IWGI 2003
0.8 nm Gate Oxide Thickness MOSFETs operates!!
0.8 nm: Distance of 3 Si atoms!!
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There is a solution! To use high-k dielectrics
Thin gate SiO2 Thick gate high-k dielectrics
Almost the same electric characteristics
However, very difficult and big challenge! Remember MOSFET had not been realized without Si/SiO2!
K: Dielectric Constant
Thick
Small leakage Current
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K=4 K=20
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R. Hauser, IEDM Short Course, 1999 Hubbard and Schlom, J Mater Res 11 2757 (1996)
Gas or liquid at 1000 K
H
Radio active He
Li Be B C N O F Ne ① Na Mg Al Si P S Cl Ar
② ① ① ① ① ① ① ① ① ① ① K Ca Sc Ti V Cr Mn Fc Co Ni Cu Zn Ga Ge As Se Br Kr ① ① ① ① ① ① ① ① ① ① Rh Sr Y Zr Nb Mo Tc Ru Rb Pd Ag Cd In Sn Sb Te I Xe ③ ① ① ① ① ① ① ① Cs Ba Hf Ta W Re Os Ir Pt Au Hg Tl Pb Bi Po At Rn Fr Ra Rf Ha Sg Ns Hs Mt
La Ce Pr Nd Pm Sm Eu Gd Tb Dy Ho Er Tm Y b Lu Ac Th Pa U Np Pu Am Cm Bk Cf Es Fm Md No Lr
Candidates
Na Al Si P S Cl Ar
② ① ① ① ① ① ① ① ① ① K Sc Ti V Cr Mn Fc Co Ni Cu Zn Ga Ge As Se Br Kr ① ① ① ① ① ① ①
Ac Th Pa U Np Pu Am Cm Bk Cf Es Fm Md No Lr
② ③
Unstable at Si interface Si + MO X M + SiO 2 ①
Si + MO X MSi X + SiO 2
Si + MO X M + MSi X O Y
Choice of High-k elements for oxide
HfO2 based dielectrics are selected as the first generation materials, because of their merit in 1) band-offset, 2) dielectric constant 3) thermal stability
La2O3 based dielectrics are thought to be the next generation materials, which may not need a thicker interfacial layer
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0 10 20 30 40 50Dielectric Constant
4
2
0
-2
-4
-6
SiO2
Ban
d D
isco
ntin
uity
[eV]
Si
XPS measurement by Prof. T. Hattori, INFOS 2003
Conduction band offset vs. Dielectric Constant
Band offset
Oxide
Leakage Current by Tunneling
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PMOS
High-k gate insulator MOSFETs for Intel: EOT=1nm
HfO2 based high-k
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33 Year
Pow
er p
er M
OSF
ET (P
)
EOT Limit 0.7~0.8 nm
EOT=0.5nm
Today EOT=1.0nm
Now
45nm node
One order of Magnitude
Si
HfO2
Metal
SiO2/SiON
Si
High-k
Metal
Direct Contact Of high-k and Si
Si
Metal SiO2/SiON
0.5~0.7nm
Introduction of High-k Still SiO2 or SiON Is used at Si interface
For the past 45 years SiO2 and SiON
For gate insulator
EOT can be reduced further beyond 0.5 nm by using direct contact to Si By choosing appropriate materials and processes.
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Preparation Room
E-Beam Evaporation 8 different target
Flash Lamp Anneal Micro to mille-seconds
Sputter for metal 5 different target
Robot room
Cluster tool for high-k thin film deposition
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1837184018431846Binding energy (eV)
Inte
nsity
(a.u
)
Si sub.
Hf SilicateSiO2
500 oC
1837184018431846Binding energy (eV)
Inte
nsity
(a.u
)
Si sub.
Hf SilicateSiO2
500 oC
SiOx-IL
HfO2
W
1 nm
k=4
k=16
SiOx-IL growth at HfO2/Si Interface
HfO2 + Si + O2 → HfO2 + Si + 2O*→HfO2+SiO2
Phase separator
SiOx-IL is formed after annealing Oxygen control is required for optimizing the reaction
Oxygen supplied from W gate electrode
XPS Si1s spectrum
D.J.Lichtenwalner, Tans. ECS 11, 319
TEM image 500 oC 30min
H. Shimizu, JJAP, 44, pp. 6131
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La-Silicate Reaction at La2O3/Si
La2O3
La-silicate
W
500 oC, 30 min
1 nm
k=8~14
k=23
1837184018431846Binding energy (eV)
Inte
nsity
(a.u
)
as depo.
300 oC
La-silicate
Si sub.
500 oC
1837184018431846Binding energy (eV)
Inte
nsity
(a.u
)
as depo.
300 oC
La-silicate
Si sub.
500 oC
La2O3 + Si + nO2 → La2SiO5, La2Si2O7, La9.33Si6O26, La10(SiO4)6O3, etc.
La2O3 can achieve direct contact of high-k/Si
XPS Si1s spectra TEM image
Direct contact high-k/Si is possible
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1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0 0.5 1 1.5 2 2.5 3
EOT ( nm )
Cur
rent
den
sity
( A
/cm
2 )
Al2O3HfAlO(N)HfO2HfSiO(N)HfTaOLa2O3Nd2O3Pr2O3PrSiOPrTiOSiON/SiNSm2O3SrTiO3Ta2O5TiO2ZrO2(N)ZrSiOZrAlO(N)
Gate Leakage vs EOT, (Vg=|1|V)
La2O3
HfO2
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0.0E+00
5.0E-04
1.0E-03
1.5E-03
2.0E-03
2.5E-03
3.0E-03
3.5E-03
0 0.2 0.4 0.6 0.8 1
Vg=0VVg=0.2VVg=0.4VVg=0.6VVg=0.8VVg=1.0VVg=1.2V
0 0.2 0.4 0.6 0.8 1
Vg=0VVg=0.2VVg=0.4VVg=0.6VVg=0.8VVg=1.0VVg=1.2V
0 0.2 0.4 0.6 0.8 1
Vg=0VVg=0.2VVg=0.4VVg=0.6VVg=0.8VVg=1.0VVg=1.2VI d
(V)
W/L = 50µm /2.5µm
Vd (V) Vd (V) Vd (V)
EOT=0.37nm
Vth=-0.04V Vth=-0.05V Vth=-0.06V
EOT=0.37nm EOT=0.40nm EOT=0.48nm W/L = 50µm /2.5µm W/L = 50µm /2.5µm
0.48 0.37nm Increase of Id at 30%
La2O3 at 300oC process make sub-0.4 nm EOT MOSFET
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FGA500oC 30min FGA700oC 30min FGA800oC 30min
A fairly nice La-silicate/Si interface can be obtained with high temperature annealing. (800oC)
However, high-temperature anneal is necessary for the good interfacial property
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EOT~1.3nm
Pulse input
Dit = 2 x 1012 [cm-2/eV]
Dit = 5 x 1011 [cm-2/eV]
Dit = 1.6 x 1011 [cm-2/eV]
500oC
700oC
800oC
A small Dit of 1.6x1011 cm-2/eV, results in better electron mobility.
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① silicate-reaction-formed fresh interface
metal
Si sub.
metal
Si sub.
La2O3 La-silicateSi Si
Fresh interface with silicate reaction
J. S. Jur, et al., Appl. Phys. Lett., Vol. 87, No. 10, (2007) p. 102908
② stress relaxation at interface by glass type structure of La silicate.
La atomLa-O-Si bonding
Si sub.
SiO4tetrahedron network
FGA800oC is necessary to reduce the interfacial stress
S. D. Kosowsky, et al., Appl. Phys. Lett., Vol. 70, No. 23, (1997) pp. 3119
Physical mechanisms for small Dit
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Si sub.
La-silicateW
Si sub.
La-silicateW
TiN
Si sub.
La-silicateW
TiN
Si
EOT=1.02nm
EOT=1.63nm
EOT=0.71nm
Increasing EOT caused by high temperature annealing can be dramatically suppressed by Silicon masked stacks
EOT growth suppression by Si coverage
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No interfacial layer can be confirmed with Si/TiN/W
MIPSW TiN/W
Kav ~ 8 Kav ~ 12 Kav ~ 16
Si 2nm2nm2nm
HK
MG
La2O3 Si/TiN/W
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EOT=0.62nm EOT=0.62nm
No frequency dispersion
EOT of 0.62nm and 155 cm2/Vsec at 1MV/cm can be achieved
nMOSFET with EOT of 0.62nm
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ITRS requirements
MIPS Stacks
This work (MIPS Stacks)
Open : Hf-based oxides
T. Ando et al., IEDM2009
Gate leakage is two orders of magnitude lower than that of ITRS
Electron mobility is comparable to record mobility with Hf-based oxides
Benchmark of La-silicate dielectrics
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Metal (Silicide) S/D
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Extreme scaling in MOSFET
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Surface or interface control Diffusion species: metal atom (Ni, Co) Rough interface at silicide/Si - Excess silicide formation - Different φBn presented at interface - Process temperature dependent composition
Diffusion species: Si atom (Ti) Surface roughness increases - Line dependent resistivity change
Line width of 0.1 µm
H. Iwai et al., Microelectron. Eng., 60, 157 (2002).
Top view
Epitaxial NiSi2
O. Nakatsuka et al., Microelectron. Eng., 83, 2272 (2006).
Si(001) sub. Annealing: 650 oC
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Unwanted leakage current
- Atomically flat interface with smooth surface - Suppressed leakage current - Stability of silicide phase and interface in a wide process temperature
Specification for metal silicide S/D
- Edge leakage current at periphery - Generation current due to
defects in substrate
Length of a contact side (µm)
Cur
rent
den
sity
(A/c
m2 )
10-3
10-2
10 102
Vapp = -0.2V φBn = ~0.57 eV
Variable leakage current in smaller contact
Ni silicide/Si diodes
Annealing: 500 oC
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Si substrate
Ni-silicide
Si substrate
Si substrate
Ni-silicide
Si substrate
Deposition of Ni film
Deposition from NiSi2 source Annealing Flat interface
Rough interface
No Si substrate consumption
Annealing
Deposition of Ni-Si mixed films from NiSi2 source
- No consumption of Si atoms from substrate
- No structural size effect in silicidation process - Stable in a wide process temperature range
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- n-type Si substrate, Si(100) with 400 nm SiO2 isolation Doping concentration : 3x1015 cm-3
Al contact
Schottky diode structures
Ni source
Si substrate
Al contact
NiSi2 source
Si substrate
SiO2
SPM and HF cleaning Diode patterning by photolithography and BHF etching of SiO2 Deposition of 10-nm-thick NiSi2 and Ni sources by RF sputtering in Ar atmosphere Ni silicidation by Rapid Thermal Annealing (RTA) in N2 atmosphere Al contact deposition on substrate backside by thermal evaporation
- Measurement of electrical characteristics - SEM and TEM observation - XRD and XPS analysis
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SEM views of silicide/Si interfaces
NiSi2 source
Ni source (50nm)
rough
rough
rough flat
flat
flat
STI 500nm
NiSi2 source (50nm)
500nm
500nm
STI
500nmSTI STI
500nmSTI500nmSTI600oC , 1min
700oC , 1min
800oC , 1min
- Rough interfaces - Consumed Si substrate - Thickness increase ~100 nm
Ni source
- Atomically flat interfaces - No Si consumption - Temperature-independent
Si substrate
Ni-silicide
Ni source
Ni-silicide
Si substrate
NiSi2 source
STI
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Ideal characteristics (n = 1.00, suppressed leakage current)
Suppressed reverse leakage current - Flat interface and No Si substrate consumption - No defects in Si substrate
Ni
NiSi2
-0.8 -0.6 0.0 0.2Diode voltage (V)
-0.4 -0.210-5
10-4
10-3
10-2
Dio
de c
urre
nt (A
/cm
2 )
1.001.08
n
0.659NiSi2
0.676NiφBn (eV)Source
1.001.08
n
0.659NiSi2
0.676NiφBn (eV)Source
Generation current
RTA:500oC, 1min
Schottky diode structures
Leakage current Al contact
Ni source
Al contact
NiSi2 source
Si substrate
Si substrate
NiSi2 source Applied Voltage (V)
Cur
rent
den
sity
(A/c
m2 )
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amorphous
Si substrate
Si substrate
Ni-silicide
Si substrate
Ni-rich
Si substrate
NiSi
Si substrate
Ni NiSi
Ni-rich+a-NiSi2
Si substrate Si substrate Si substrate
300oC 550oC
NiSi2
Si substrate
800oC
Si substrate
NiSi2
as-deposited Ni source
NiSi2 source
- No distinct structure change at the interface → Stable φBn and n-factor → No structural effect for silicidation
Ni-rich+a-NiSi2 Ni-rich+a-NiSi2
NiSi2 NiSi2 NiSi2
Agglomeration
- Ni-rich phases in the silicide layer are maintained with NiSi2 source
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Wire channel
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1V 0V
0V
S
0V
0V <V<1V
1V 0V
0V
0V
0V S D
G
G
G
Suppression of subthreshold leakage by surrounding gate structure
Planar Surrounding gate
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Planar Fin Nanowire
Source Drain Gate
Wdep
1
Leakage current
S D
Planar FET Fin FET Nanowire FET
Because of off-leakage control, 1V
0V
0V0V
0VS
D
GG
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Fin Tri-gate Ω-gate Nanowire
G G G
G G
Nanowire structures in a wide meaning
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Nanowire FET
Nanowire FET
ITRS 2009
Multiple Gate (Fin) FET
Bulk → Fin → Nanowire
Siナノワイヤ
FinBulk or SOI
Si Nanowire
2015 2020 22 or 16nm node 11 or 8nm node
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Si nanowire FET as a strong candidate
1. Compatibility with current CMOS process
2. Good controllability of IOFF
3. High drive current
1D ballistic conduction
Multi quantum Channel High integration
of wires
k
E
量子チャネル
量子チャネル量子チャネル量子チャネル
バンド図
Quantum channelQuantum channel
Quantum channelQuantum channel
k
E
量子チャネル
量子チャネル量子チャネル量子チャネル
バンド図
Quantum channelQuantum channel
Quantum channelQuantum channel
Off電流の
カットオフ
Gate:OFFDrain Source
cut-off
Gate: OFFdrainsource
Off電流の
カットオフ
Gate:OFFDrain Source
cut-off
Gate: OFFdrainsource
Wdep
1
Leakage current
S D
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Increase the Number of quantum channels
Energy band of Bulk Si
Eg
By Prof. Shiraishi of Tsukuba univ.
Energy band of 3 x 3 Si wire
4 channels can be used
Eg
61
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Device fabrication
Si/Si0.8Ge0.2 superlattice epitaxy on SOI
Anisotropic etching of these layers
Isotropic etching of SiGe
Gate depositions S/D implantation Spacer formation Activation anneal Salicidation
BOXSi
SiGeSi
SiGeSi
SiGeSiN
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Cross-section
50nm
SiN HM
Wire direction : <110> 50 NWs in parallel 3 levels vertically-stacked Total array of 150 wires EOT ~2.6 nm
NWs
8
3D-stacked Si NWs with Hi-k/MG
BOX
500 nm
Sour
ce
Dra
in
Gate
Top view
<110>
C. Dupre et al., IEDM Tech. Dig., p.749, 2008
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SiNW FET Fabrication
Sacrificial Oxidation
SiN sidewall support formation
Ni SALISIDE Process (Ni 9nm / TiN 10nm)
S/D & Fin Patterning
Gate Oxidation & Poly-Si Deposition Gate Lithography & RIE Etching Gate Sidewall Formation
30nm
30nm
30nm
Oixde etch back
Standard recipe for gate stack formation Backend
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(a) SEM image of Si NW FET (Lg = 200nm) (b) high magnification observation of gate and its sidewall.
65
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Lg=65nm, Tox=3nm
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
-1.5 -1.0 -0.5 0.0 0.5 1.0
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
6.E-05
7.E-05
-1.0 -0.5 0.0 0.5 1.00
10 20 30 40 50 60 70
Dra
in C
urre
nt (µ
A)
Drain Voltage (V)
Vg-Vth=1.0 V
Vg-Vth= -1.0 V
0.8 V
0.6 V
0.4 V
0.2 V
(a)
10-12
Gate Voltage (V)
pFET nFET
(b)
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
Dra
in C
urre
nt (A
)
Vd=-50mV
Vd=-1V
Vd=50mV
Vd=1V
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
-1.5 -1.0 -0.5 0.0 0.5 1.0
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
6.E-05
7.E-05
-1.0 -0.5 0.0 0.5 1.00
10 20 30 40 50 60 70
Dra
in C
urre
nt (µ
A)
Drain Voltage (V)
Vg-Vth=1.0 V
Vg-Vth= -1.0 V
0.8 V
0.6 V
0.4 V
0.2 V
(a)
10-12
Gate Voltage (V)
pFET nFET
(b)
10-11
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
Dra
in C
urre
nt (A
)
Vd=-50mV
Vd=-1V
Vd=50mV
Vd=1V
On/Off>106、60uA/wire
Recent results to be presented by ESSDERC 2010 next week in Sevile
Wire cross-section: 20 nm X 10 nm
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(12)(12)
本研究で得られたオン電流
(10x20)102µA
Our Work
Bench Mark
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Y. Jiang, VLSI 2008, p.34 H.-S. Wong, VLSI 2009, p.92 S. Bangsaruntip, IEDM 2009, p.297 C. Dupre, IEDM 2008, p. 749 S.D.Suk, IEDM 2005, p.735 G.Bidel, VLSI 2009, p.240
SiナノワイヤFET
Planer FET S. Kamiyama, IEDM 2009, p. 431 P. Packan, IEDM 2009, p.659
1.2~1.3V
1.0~1.1V
Lg=500~65nm
ION/IOFF Bench mark
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Distance from SiNW Surface (nm)
6543210
角の部分
平らな部分
電子濃度(x1019cm-3)Electron Density
Edge portion
Flat portion
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0
2000
4000
6000
8000
10000
12000
2008 2010 2012 2014 2016 2018 2020 2022 2024 2026
Year
I ON
(µA/µm
)
SiNW (12nm×19nm)
MGFDbulk
ION∝Lg-0.5×Tox
-1(20)
(11)
(33)
(15)
(26)
今回用いたIONの仮定
1µm当たりの本数
コンパクトモデルの完成
S/D寄生抵抗低減技術
pMOSの高性能化
低EOT実現技術
Compact model
Small EOT for high-k
P-MOS improvement
Low S/D resistance
# of wires /1µm
Assumption
ITRS
Primitive estimation !
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Our roadmap for R &D Source: H. Iwai, IWJT 2008
Current Issues
III-V & Ge Nanowire High-k gate insulator Wire formation technique
CNT:
Width and Chirality control Growth and integration of CNT
Graphene: Graphene formation technique Suppression of off-current
Very small bandgap or no bandgap (semi-metal)
Control of ribbon edge structure which affects bandgap
Chirality determines conduction types: metal or semiconductor
72
Si Nanowire Control of wire surface property
Compact I-V model
Source Drain contact Optimization of wire diameter
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Thank you for your attention!
73