Form #: CSI-D-686 Document 007

Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com

November 16, 2015 • Revision 2.1

MYX4DDR364M16JT

Features• Tin-lead ball metallurgy

• VDD = VDDQ = 1.35V (1.283-1.45V)

• Backward-compatible to VCC = VCCQ = 1.5V ±0.075V

• 1.35V center-terminated push/pull I/O

• Differential bidirectional data strobe

• 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#)

• 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

• Programmable CAS READ latency (CL)

• Programmable CAS ADDITIVE latency (AL)

• Programmable CAS WRITE latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of -40°C to 105°C

� 64ms, 8192 cycle refresh at -40°C to 85°C

� 32ms, 8192 cycle refresh at 85°C to 105°C

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Options Code

• Configuration

� 64M x 16 64M16

• Package: FBGA (Sn63 Pb37 solder) BG

� Footprint: 96-ball (8mm x 14mm) TW

• Timing - cycle time

� 1.5ns @ CL = 13 (DDR3-1866) -107

• Operating temperature

� Industrial (-40°C ≤ TC ≤ +95°C) IT

� Enhanced (-40°C ≤ TC ≤ +105°C) ET

• Part Marking: Label (L), Dot (D)

1Gb - 64M x 16 DDR3 SDRAMAdvanced information. Subject to change without notice.

Table 1: Key Timing Parameters

Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL tRCD (ns) tRP (ns) CL (ns)

-107 1866 13-13-13 13.91

Micron Part. No. MT41K64M16TW-107AIT:J for the IT temp version

Micron Part No. MT41K64M16TW-107AAT:J for the ET temp versionFebruary 26, 2016 • Rev is ion 2.2

Form #: CSI-D-686 Document 007

Micross US (Americas) • 407.298.7100Micross UK (EMEA & ROW) • +44 (0) 1603 788967

sales@micross.comwww.micross.com

November 16, 2015 • Revision 2.1

MYX4DDR364M16JT • 1Gb - 64M x 16 DDR3 SDRAMAdvanced information. Subject to change without notice.

Figure 1: 96-Ball FBGA (Top View), TW

Figure 2: Package Dimensions 96-Ball FBGA Package - x16 (TW)

Notes: 1. All dimensions are in millimeters. 2. Solder ball material: Sn63/Pb37 3. Micron – MT41J64M16

Figure 8: 96-Ball FBGA – x16 (Top View)

1 2 3 4 6 7 8 95

A

B

C

D

E

F

G

H

J

K

L

M

N

P

R

TV SS

V DD

V SS

V SS

NC CS#

BA0

A3

A5

A7

RESET#

NC V SS

V REFDQ V DDQ DQ4

RAS#

CAS#

WE#

BA2

A0

A2

A9

NC

V SSQ

V SSQ

V SSQ V DD V SS

V DDQ DQ2 LDQS

DQ6 LDQS#

V DDQ

V DDQ DQ13 DQ15

DQ11 DQ9

V DDQ UDM

V SS V SSQ DQ0

ODT V DD

V DD

NC

A11

A1

NC

A10/AP ZQ

V REFCA

BA1

A4

A6

A8

CK V SS

DQ7 DQ5 V DDQ

NC

CKE

NC

V SS

V DD

V SS

V DD

V SS

V DD

DQ8

UDQS# DQ14 V SSQ

DQ1 DQ3 V SSQ

V SS V SSQ

UDQS

DQ12 V DDQ V SS

DQ10 V DDQ

V SSQ V DD

LDM V SSQ V DDQ

CK# V DD

A12/BC#

Notes: 1. Ball descriptions listed in Table 5 (page 23) are listed as “x4, x8” if unique; otherwise,x4 and x8 are the same.

2. A comma separates the con�guration; a slash de�nes a selectable function.Example D7 = NF, NF/TDQS#. NF applies to the x4 con�guration only. NF/TDQS# appliesto the x8 con�guration only—selectable between NF or TDQS# via MRS (symbols are de-�ned in Table 5).

1Gb: x4, x8, x16 DDR3 SDRAMBall Assignments and Descriptions

PDF: 09005aef826aa9061Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN 18 Micron Technology, Inc. reserves the right to change products or speci�cations without notice.

2006 Micron Technology, Inc. All rights reserved.

Figure 13: 96-Ball FBGA – x16 (JT)

123789

A

B

C

D

E

F

G

H

J

K

L

M

N

Ball A1 ID

Ball A1 ID

0.25 MIN

1.1 ±0.1

0.8 TYP

6.4 CTR

8 ±0.1

0.8 TYP

12 CTR

14 ±0.1

96X Ø0.45Dimensions applyto solder balls post-re�ow on Ø0.35SMD ball pads.

0.155

P

R

T

1.8 CTRNonconductive

overmold

1Gb: x4, x8, x16 DDR3 SDRAMPackage Dimensions

PDF: 09005aef826aa9061Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN 29 Micron Technology, Inc. reserves the right to change products or speci�cations without notice.

2006 Micron Technology, Inc. All rights reserved.

Figure 13: 96-Ball FBGA – x16 (JT)

123789

A

B

C

D

E

F

G

H

J

K

L

M

N

Ball A1 ID

Ball A1 ID

0.25 MIN

1.1 ±0.1

0.8 TYP

6.4 CTR

8 ±0.1

0.8 TYP

12 CTR

14 ±0.1

96X Ø0.45Dimensions applyto solder balls post-re�ow on Ø0.35SMD ball pads.

0.155

P

R

T

1.8 CTRNonconductive

overmold

1Gb: x4, x8, x16 DDR3 SDRAMPackage Dimensions

PDF: 09005aef826aa9061Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN 29 Micron Technology, Inc. reserves the right to change products or speci�cations without notice.

2006 Micron Technology, Inc. All rights reserved.

February 26, 2016 • Rev is ion 2.2

0.47

0.29

0.42