AN- ---- TI- Sur le nombre de solutions d'un probleme aux limites non lineaire. (On the number of solution of a nonlinear boundary value problem) AU- ADDOU IDRIS^AMMAR KHODJA FARID ^ A2- ADDOU IDRIS^AMMAR KHODJA FARID ^ CS- ^USTHB/INST MATHEMATIQUES, 16111 ALGER, ALGERIA^LAB CALCUL SCI, 25030 BESANCON, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ALGER AF- USTHB/ALGERIA;UNIV BESANCON/FRANCE JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1995 DT- Periodique LA- French AB- On etudie le nombre de solutions du probleme: -u'' = f (u) - 'Lambda' dans (0, 'Pi' ); u(0) = u('Pi' ) = 0 pour de grandes valeurs de 'Lambda' et suivant les parametres a = lim(s->-)'infini' f (s)/s et b = lim(s->+)'infini' f (s)/s. SC- 001A02E07 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Equation differentielle; Probleme valeur limite; Probleme non lineaire; Resolution equation PR- SCI-FONDA/MATHEMATIQUES; DB- SURBLEADDOU1995COMPTES

AN- ---- TI- A strongly nonlinear reaction diffusion model for a deterministic diffuusive epidemic AU- KIRANE M^KOUACHI S^ A2- KIRANE M^KOUACHI S^ CS- ^ECOLE NORMALE SUPERIEURE MECANIQUE, OUM EL-BOUAGHI, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- OUM-EL-BOUAGHI AF- ENS/ALGERIA JN- JAPAN JOURNAL OF INDUSTRIAL AND APPLIED MATHEMATICS PD- 1995 DT- Periodique LA- English AB- In the present paper the mathematical validity of a model on the spread of an infectious disease is proved. This model was proposed by Bailey in [2]. The mathematical validity is proved by means of a positivity, uniqueness and existence theorem. Moreover the large time behaviour of the global solutions is analyzed. In spite of the apparent simplicity of the problem, the solution requires a delicate set of techniques. It seems very difficult to extend these techniques to a model in more than one dimension without imposing conditions on the data. SC- 001A02I01J CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Equation derivee partielle; Equation reaction diffusion; Theoreme unicite; Theoreme existence; Epidemiologie; Modele mathematique; Modele non lineaire; Modele 1 dimension; Modele deterministe; Existence solution; Solution globale PR- SCI-FONDA/MATHEMATIQUES; DB- ADEMKIRANE1995JAPAN

AN- ---- TI- Perturbation in a free boundary problem AU- BOUCHERIF ABDELKADER^ BOUGUIMA MOHAMED^ A2- BOUCHERIF ABDELKADER^ BOUGUIMA MOHAMED^ CS- ^UNIV TLEMCEN, DEP MATHEMATIQUES, TLEMCEN 13000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- TLEMCEN AF- UNIV TLEMCEN/ALGERIA JN- JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS PD- 1994 DT- Periodique LA- English SC- 001A02E07; 001A02E08 CC- 001A02; 001A02 C1- MATHEMATIQUES; MATHEMATIQUES C2- MATHEMATIQUES; MATHEMATIQUES FD- Equation derivee partielle; Equation differentielle; Probleme frontiere libre; Perturbation PR- SCI-FONDA/MATHEMATIQUES;SCI-FONDA/MATHEMATIQUES; DB- PERTURBATIONBLEBOUCHERIF1994JOURNAL

AN- ---- TI- Une methode optimale de classe C(0) d'approximation du bilaplacien. (An optimal C(0) algorithm for the biharmonic problem) AU- AMARA MOHAMED^ A2- AMARA MOHAMED^ CS- ^USTHB, INST MATHEMATIQUES, 16111 BAB EZZOUAR, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1994 DT- Periodique LA- French AB- La decomposition 'Psi' - 'Omega' du probleme du bilaplacien et particulierement la methode d'elements finis mixte proposee par Ciarlet-Raviart induisent des estimations d'erreur a priori d'ordre O (h(k-1)), k;2. La methode decrite dans cet article converge pour k;1 sans aucune condition de regularite sur 'Omega' ou 'Psi' et donne une estimation en O (h(k)). De plus la technique de gradient conjugue propose par Glowinski-Pironneau s'adapte a cette nouvelle methode SC- 001A02I01D; 001A02I01L CC- 001A02; 001A02 C1- MATHEMATIQUES; MATHEMATIQUES C2- MATHEMATIQUES; MATHEMATIQUES FD- Approximation numerique; Methode element fini; Methode mixte; Estimation erreur; Estimation a priori; Methode gradient; Equation biharmonique PR- SCI-FONDA/MATHEMATIQUES;SCI-FONDA/MATHEMATIQUES; DB- UNEBLEAMARA1994COMPTES

AN- ---- TI- An improvement of Fraisse's sufficient condition for Hamiltonian graphs AU- AINOUCHE A^ A2- AINOUCHE A^ CS- ^USTHB, CENT CALCUL, 16111 ALGER, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- JOURNAL OF GRAPH THEORY PD- 1992 DT- Periodique LA- English AB- Let G be a k-connected graph of order n. For an independent set S 'inclus dans' V, let d(S) be the number of vertices adjacent to at least one vertex of S and (if |S|;2) let i(S) be the number of vertices adjacent to at least |S| - 1 vertices of S. We prove that if there exists some s, 1 3/4 s 3/4 k, such that 'Sigma' (xi ) 'appartient a' ( X) d(X{x(i)}) > s(n - 1) - k|s/2 - i(X)|(s - 1)/2| holds for every independent set X = {x(0),x(1),...x(s)} of s+1 vertices, then G is hamiltonian SC- 001A02B01C CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Graphe hamiltonien; Condition suffisante; Graphe Petersen; Condition Fraisse; Graphe k-connexe; Ensemble independant PR- SCI-FONDA/MATHEMATIQUES; DB- ANPHSAINOUCHE1992JOURNAL

AN- ---- TI- Proprietes algebriques de suites differentiellement finies. (Algebraic properties of differentially finite sequences) AU- BENZAGHOU BENALI^BEZIVIN J^ A2- BENZAGHOU BENALI^BEZIVIN J^ CS- ^UNIV H BOUMEDIENE, DEP MATHEMATIQUES, ALGER, ALGERIA^UNIV CAEN, DEP MATHEMATIQUE MECANIQUE, 14032 CAEN, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ALGER AF- USTHB/ALGERIA;UNIV CAEN/FRANCE JN- BULLETIN DE LA SOCIETE MATHEMATIQUE DE FRANCE PD- 1992 DT- Periodique LA- French SC- 001A02C03 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Fraction rationnelle; Equation differentielle; Equation lineaire; Equation polynomiale; Corps commutatif; Suite recurrente lineaire; Suite differentiellement finie; Algebre Hadamard PR- SCI-FONDA/MATHEMATIQUES; DB- PROPRIETESCESBENZAGHOU1992BULLETIN

AN- ---- TI- Probleme de Carleman et composition des fonctions indefiniment derivables. (The Carleman problem and composition of infinitely differentiable functions) AU- TADJOURI M^ A2- TADJOURI M^ CS- ^UNIV ORAN, INST MATHEMATIQUES, ORAN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- UNIV ORAN/ALGERIA JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1992 DT- Periodique LA- French AB- On donne des conditions necessaires et suffisantes sur la suite M=(Mn) pour que les classes de Roumieu soient fermees pour l'operation de composition SC- 001A02E01 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Composition; Condition necessaire suffisante; Suite numerique; Classe Carleman; Classe Roumieu; Formule Faa du Bruno; Fonction infiniment derivable PR- SCI-FONDA/MATHEMATIQUES; DB- PROBLEMEONSTADJOURI1992COMPTES

AN- ---- TI- A posteriori error estimation with finite element methods of lines for one- dimensional parabolic systems AU- ADJERID S^FLAHERTY J^WANG Y^ A2- ADJERID S^FLAHERTY J^WANG Y^ CS- ^UNIV SCI TECHNOLOGIE HAOURI BOUMEDIENE, INST MATHEMATIQUES, BAB EZZOUR ALGER, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- NUMERISCHE MATHEMATIK PD- 1993 DT- Periodique LA- English AB- Consider the solution of one-dimensional linear initial-boundary value problems by a finite element method of lines using a piecewise p(th)- degree polynomial basis. A posteriori estimates of the discretization error are obtained as the solutions of either local parabolic or local elliptic finite element problems using piecewise polynomial corrections of degree p + 1 that vanish at element ends. Error estimates computed in this manner are shown to converge in energy under mesh refinement to the exact finite element discretization error. Computational results indicate that the error estimates are robust over a wide range of mesh spacings and polynomial degrees and are, furthermore, applicable in situations that are not supported by the analysis SC- 001A02I01J CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Estimation erreur; Estimation a posteriori; Methode element fini; Methode lignes; Probleme valeur limite; Probleme valeur initiale; Equation parabolique; Equation elliptique PR- SCI-FONDA/MATHEMATIQUES; DB- ATEMADJERID1993NUMERISCHE

AN- ---- TI- Programmes scolaires et medias. (Teaching programs and media) AU- CHAOUCHE RAMDANE Z^ A2- CHAOUCHE RAMDANE Z^ CS- ^UNIV TLEMCEN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- TLEMCEN AF- UNIV TLEMCEN/ALGERIA JN- AL-MAGALLAT AL-TUNISIYYAT LI-'ULUM AL-ITTISAL PD- 1993 DT- Periodique LA- French AB- Phenomene nouveau dans les dix dernieres annees: la creation de milliers de programmes scolaires destines a familiariser les effets des communications de masse sur leur existence SC- 001A01A03; 205 CC- 001A01 C1- INGENERIE ET TECHNOLOGIE C2- SCIENCES DE L'INFORMATION. DOCUMENTATION FD- Afrique; Audiovisuel; Education; Programme enseignement; Algerie; Exemple PR- ING&TECHN/SCIENCES DE L'INFORMATION. DOCUMENTATION; DB- PROGRAMMESMEDCHAOUCHE1993AL-MAGALLAT

AN- ---- TI- On kernels in perfect graphs AU- BLIDIA M^DUCHET P^MAFFRAY F^ A2- BLIDIA M^DUCHET P^MAFFRAY F^ CS- ^UNIV BLIDA, ALGERIA^CNRS IMAG, LSD2, 38041 GRENOBLE, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- BLIDA AF- UNIV BLIDA/ALGERIA;CNRS/FRANCE JN- COMBINATORICA PD- 1993 DT- Periodique LA- English SC- 001A02B01C CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Graphe oriente; Contre exemple; Complement; Graphe resoluble; Graphe parfait; Noyau PR- SCI-FONDA/MATHEMATIQUES; DB- ONPHSBLIDIA1993COMBINATORICA

AN- ---- TI- Restriction d'un courant positif ferme a une hypersurface complexe. (Restriction of a closed positive current to a smooth hypersurface) AU- BADOUCHE N^ A2- BADOUCHE N^ CS- ^INST MATHEMATIQUES, USTHB, ALGER, ALGERIA^CNRS UNIV POITIERS, 86022 POITIERS, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ALGER AF- USTHB/ALGERIA;CNRS/FRANCE JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1993 DT- Periodique LA- French AB- Soient T un courant positif ferme dans un voisinage de 0 dans C(n) et g une fonction de classe C()'infini' sur R telle que: 03/4g3/41, g(x)=0 si |x|3/41 et g(x)=1 si |x|_2. On notion de restriction du courant T a l'hyperplan H={0}x C(n-1), cette restriction s'exprime comme limite des courants b ('Chi' ('Epsilon' ) (1/2 i'Pi' ) (dz(1)/z(1))'Lambda' T), quand 'Epsilon' tend vers 0 ou 'Chi' ('Epsilon' )(z)=g(|z(1)|/'Epsilon' ) pour z=(z(1),..., z(n)) dans C(n) SC- 001A02E05 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Hypersurface; Hyperplan; Fonction biholomorphe; Mesure positive; Courant positif ferme; Restriction PR- SCI-FONDA/MATHEMATIQUES; DB- RESTRICTIONACEBADOUCHE1993COMPTES

AN- ---- TI- Sur un probleme a frontiere libre. (On a free boundary problem) AU- BOUGUIMA MOHAMED S^ A2- BOUGUIMA MOHAMED S^ CS- ^UNIV TLEMCEN, INST SCI EXACTES, DEP MATHEMATIQUES, TLEMCEN 13000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- TLEMCEN AF- UNIV TLEMCEN/ALGERIA JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1993 DT- Periodique LA- French AB- On considere un probleme elliptique semilineaire -'Delta' u=g(u) H (u- u) dans 'Omega' , u=h sur 'd rond''Omega' ou H est la fonction d'Heaviside, 'Mu' un parametre et 'Omega' est la boule unite de R(n) avec n_3. Sous des conditions convenables sur g, h et 'Mu' , nous montrons que le probleme admet deux solutions SC- 001A02E08 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Probleme frontiere libre; Equation semi lineaire; Equation elliptique; Espace n dimensions; Solution multiple; Fonction Heaviside; Boule unite PR- SCI-FONDA/MATHEMATIQUES; DB- SURBLEBOUGUIMA1993COMPTES

AN- ---- TI- La bibliometrie : histoire d'une discipline metrique. (Bibliometry: history of a metric discipline) AU- ABDELHAMID A^ A2- ABDELHAMID A^ CS- ^UNIV ALGER, INST BIBLIOTHECONOMIE, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- UNIV ALGER/ALGERIA JN- RIST PD- 1992 DT- Periodique LA- French AB- Le debut des etudes quantitatives de la communication ecrite ont ete publiees au debut du XXeme siecle. L'utilisation de differents concepts d'approche dans ces etudes illustre la genese d'une nouvelle discipline. En 1969, la bibliometrie fut consacree comme une discipline metrique, ayant pour objet l'application des methodes mathematiques dans le domaine de la communication ecrite SC- 001A01A02; 205 CC- 001A01 C1- INGENERIE ET TECHNOLOGIE C2- SCIENCES DE L'INFORMATION. DOCUMENTATION FD- Infometrie; Bibliometrie; Historique; Science information PR- ING&TECHN/SCIENCES DE L'INFORMATION. DOCUMENTATION; DB- LALINABDELHAMID1992RIST

AN- ---- TI- The impact of information technology on the library profession and education AU- BOUMARAF BEHDJA^ A2- BOUMARAF BEHDJA^ CS- ^UNIV CONSTANTINE, INST LIBRARY STUDIES, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA JN- RIST PD- 1991 DT- Periodique LA- English SC- 001A01A04; 205 CC- 001A01 C1- INGENERIE ET TECHNOLOGIE C2- SCIENCES DE L'INFORMATION. DOCUMENTATION FD- Profession; Formation professionnelle; Bibliothecaire; Etude impact; Technologie information; Evolution PR- ING&TECHN/SCIENCES DE L'INFORMATION. DOCUMENTATION; DB- THEIONBOUMARAF1991RIST

AN- ---- TI- L'etat du livre dans les pays du Tiers-Monde. (State of books in the third world) AU- ALLAHOU RABAH^ A2- ALLAHOU RABAH^ CS- ^INST BIBLIOTHECONOMIE, ALGER, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- UNIV ALGER/ALGERIA JN- RIST PD- 1992 DT- Periodique LA- French AB- Le livre devient un moyen d'information et de communication, notamment avec le developpement technologique des moyens de production. Neanmoins, la situation dramatique dans les pays du Tiers Monde revele l'importance des investissements a entreprendre dans le domaine de la production du livre pour acceder au progres socio-economique SC- 001A01G02A; 205 CC- 001A01 C1- INGENERIE ET TECHNOLOGIE C2- SCIENCES DE L'INFORMATION. DOCUMENTATION FD- Edition; Afrique; Livre; Communication ecrite; Progres technique; Tiers monde; Algerie PR- TECH-INFO/TELECOMMUNICATIONS; DB- L'ETATWORALLAHOU1992RIST

AN- ---- TI- Interval stability and interval covering property in finite posets AU- BOUCHEMAKH I^ A2- BOUCHEMAKH I^ CS- ^USTHB, DEP RECHERCHE OPERATIONNELLE, ALGER, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- ORDER PD- 1992 DT- Periodique LA- English SC- 001A02B02 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Ensemble partiellement ordonne; Stabilite; Intervalle; Recouvrement ensemble; Probleme NP complet; Propriete Sperner; Relation minimax; Chaine symetrique PR- SCI-FONDA/MATHEMATIQUES; DB- INTERVALETSBOUCHEMAKH1992ORDER

AN- ---- TI- Fonction hypergeometrique (2)F(1) sur une algebre de Jordan AU- HACEN D^ A2- HACEN D^ CS- ^INSTITUT DE MATHEMATIQUES TLEMCEN 1300, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- TLEMCEN AF- UNIV TLEMCEN/ALGERIA JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1992 DT- Periodique LA- French AB- On montre que les fonctions hypergeometrique (2)F(1) definie sur une algebre de Jordan est solution d'un systeme differentiel du second ordre analogue a l'equation classique dans le cas d'une variable SC- 001A02E07 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Fonction hypergeometrique; Equation differentielle; Equation ordre 2; Groupe automorphisme; Transformation Laplace; Fonction spherique; Produit scalaire; Algebre Jordan PR- SCI-FONDA/MATHEMATIQUES; DB- FONCTIONDANHACEN1992COMPTES

AN- ---- TI- Estimation du conditionnement spectral d'une matrice. (Estimation of the spectral condition number of a matrix) AU- SLIMANI O^VAILLANCOURT R^ A2- SLIMANI O^VAILLANCOURT R^ CS- ^USTHB, DEP MATHEMATIQUES, USTHB, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- ANNALES DES SCIENCES MATHEMATIQUES DU QUEBEC PD- 1991 DT- Periodique LA- French SC- 001A02I01E CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Estimation; Algorithme; Virgule flottante; Matrice reguliere; Matrice triangulaire; Conditionnement PR- SCI-FONDA/MATHEMATIQUES; DB- ESTIMATIONRIXSLIMANI1991ANNALES

AN- ---- TI- Algebraic treatment of the Morse potential AU- CHETOUANI L^GUECHI L^HAMMANN T^ A2- CHETOUANI L^GUECHI L^HAMMANN T^ CS- ^UNIV CONSTANTINE, INST PHYSIQUE, DEP PHYSIQUE THEORIQUE, CONSTANTINE, ALGERIA^UNIV HAUTE ALSACE, FAC SCI TECHNIQUES, LAB MATHEMATIQUES, PHYSIQUE MATHEMATIQUE INFORMATIQUE, 68093 MULHOUSE, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA;UNIV ALSACE/FRANCE JN- HELVETICA PHYSICA ACTA PD- 1992 DT- Periodique LA- English AB- Ever since the first notable success of the algebraic method in the calculation of wave functions and of hydrogen atom transition amplitudes [1], renewed interest for the algebraic approach has been emerging. Hence a certain number of potentials have been studied in the algebraic approach [2,3] and their Green's functions have been calculated. This algebraic method consists mainly in the transformation of the chr"dinger equation via a change of variables, in order to introduce generators satisfying a Lie algebra SC- 001A02J01 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Fonction Green; Modele Morse; Algebre Lie; Equation differentielle PR- SCI-FONDA/MATHEMATIQUES; DB- ALGEBRAICIALCHETOUANI1992HELVETICA

AN- ---- TI- A microcomputer-based data acquisition system for an NMR pulse spectrometer AU- PUVVADA R^MEKAOUI S^ A2- PUVVADA R^MEKAOUI S^ CS- ^ECOLE NATIONALE POLYTECH, DEP ELECTRONIQUE, ALGIERS, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- ENP/ALGERIA JN- JOURNAL OF PHYSICS PD- 1990 DT- Periodique LA- English SC- 001A03B CC- 001A03 C1- INGENERIE ET TECHNOLOGIE C2- 001A03 FD- Spectrometre RMN; Microordinateur PR- ING&TECHN/METROLOGIE ET APPAREILLAGE SPECIFIQUES; DB- ATERPUVVADA1990JOURNAL

AN- ---- TI- Four sufficient conditions for hamiltonian graphs AU- AINOUCHE A^ A2- AINOUCHE A^ CS- ^USTHB-INST MATHEMATIQUES, ALGER 16111, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- DISCRETE MATHEMATICS PD- 1991 DT- Periodique LA- English AB- We give four new sufficient conditions for the existence of hamiltonian circuits in graphs. We mention first ten known results. Each one can be derived from at least one of the new conditions. We consider only undirected graphs G=(V,E) without loops and we assume that G is k- connected SC- 001A02B01C CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Graphe non oriente; Circuit hamiltonien; Condition existence; Graphe k- connexe PR- SCI-FONDA/MATHEMATIQUES; DB- FOURPHSAINOUCHE1991DISCRETE

AN- ---- TI- The periodic-Dirichlet problem for some semilinear wave equations AU- BEN NAOUM K^MAWHIN J^ A2- BENNAOUM K^MAWHIN J^ CS- ^UNIV ORAN, DEP MATHEMATIQUE, ORAN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- UNIV ORAN/ALGERIA JN- JOURNAL OF DIFFERENTIAL EQUATIONS PD- 1992 DT- Periodique LA- English SC- 001A02E08 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Probleme Dirichlet; Equation onde; Equation semi lineaire; Theoreme existence; Unicite solution; Operateur autoadjoint; Perturbation; Espace Hilbert; Solution periodique PR- SCI-FONDA/MATHEMATIQUES; DB- THEONSBEN1992JOURNAL

AN- ---- TI- Strong consistency and other properties of the spectral variance estimator AU- HALIM DAMERDJ^ A2- HALIM DAMERDJ^ CS- ^ECOLE NATIONALE POLYTECH, DEP INDUSTRIAL ENG, EL HARRACH ALGIERS, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- ENP/ALGERIA JN- MANAGEMENT SCIENCE PD- 1991 DT- Periodique LA- English AB- Consistent estimation of the variance parameter of a stochastic process allows construction, under certain conditions, of a confidence interval for the mean of the process. If the variance estimator is strongly consistent, fixed-width confidence interval construction is valid for large samples. It has long been known that the spectral variance estimator of steady-state simulation output analysis is consistent in the mean-square sense. Here, we provide strong consistency of this estimator, thereby justifying fixed-width confidence interval construction for the spectral method SC- 001A02H02M CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Estimation parametre; Variance; Methode spectrale; Convergence forte; Processus stochastique; Simulation; Regime permanent; Intervalle confiance; Analyse sortie PR- SCI-FONDA/MATHEMATIQUES; DB- STRONGTORHALIM1991MANAGEMENT

AN- ---- TI- Selective solutions to transcendental equations AU- NASSER DOUA^HOWLAND J^VAILLANCOURT R^ A2- NASSER DOUA^HOWLAND J^VAILLANCOURT R^ CS- ^UNIV TIZI-OUZOU, DEP MATHEMATIQUES, 15501, ALGERIA^UNIV OTTAWA, DEP MATHEMATIQUES, OTTAWA ON K1N 6N5, CANADA^ CO- ALGERIA;CANADA RE- ALGERIA;AMERIQUE DU NORD VI- TIZI OUZOU AF- UNIV TIZI OUZOU/ALGERIA;UNIV CANNADA/CANADA JN- COMPUTERS & MATHEMATICS WITH APPLICATIONS PD- 1991 DT- Periodique LA- English SC- 001A02I01G CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Equation transcendante; Racine equation; Methode iterative; Methode locale; Methode Newton; Point fixe; Attracteur; Fonction trigonometrique PR- SCI-FONDA/MATHEMATIQUES; DB- SELECTIVEONSNASSER1991COMPUTERS

AN- ---- TI- Approximation de coefficients de singularites. (Approximation of coefficients of singularities) AU- AMAR MOHAMED^MOUSSAOUI MOHAND^ A2- AMAR MOHAMED^MOUSSAOUI MOHAND^ CS- ^INST MATHEMATIQUES, USTHB, 16111 ALGER, ALGERIA^ENS LYON, LAB MATHEMATIQUES, 69364 LYON, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ALGER AF- USTHB/ALGERIA;ENS LYON/FRANCE JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1991 DT- Periodique LA- French AB- Nous presentons une nouvelle technique de calcul de coefficients de singularites basee sur l'utilisation de fonctions singulieres duales et un espace d'elements finis d'ordre 1. Nous obtenons ainsi une estimation d'erreur optimale en O(h(2)) SC- 001A02I01L CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Methode element fini; Singularite; Coefficient; Approximation; Equation elliptique; Condition aux limites; Estimation erreur PR- SCI-FONDA/MATHEMATIQUES; DB- APPROXIMATIONTIEAMAR1991COMPTES

AN- ---- TI- Vecteurs exponentiels et generateurs de fonction cosinus. (Exponential vectors and cosine functions generators) AU- TADJOURI M^ A2- TADJOURI M^ CS- ^UNIV ORAN ES-SENIA, INST MATHEMATIQUES, ORAN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- UNIV ORAN/ALGERIA JN- COMPTES RENDUS DE L'ACADEMIE DES SCIENCES PD- 1992 DT- Periodique LA- French AB- On montre que l'espace Exp(A) X des vecteurs exponentiels est dense dans l'espace de Banach X lorsque A engendre une fonction cosinus reguliere dans X SC- 001A02E16 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Espace Banach; Algebre operateur; Generateur fonction; Operateur non borne; Vecteur exponentiel; Fonction cosinus PR- SCI-FONDA/MATHEMATIQUES; DB- VECTEURSTORTADJOURI1992COMPTES

AN- ---- TI- Cohomology and elementary particle generations AU- DJEMAI A^TAHIRI M^ A2- DJEMAI A^TAHIRI M^ CS- ^UNIV ORAN ES-SENIA, DEP PHYSIQUE, LAB PHYSIQUE THEORIQUE, ORAN 31100, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- UNIV ORAN/ALGERIA JN- CLASSICAL AND QUANTUM GRAVITY PD- 1990 DT- Periodique LA- English AB- On relie le nombre des generations de particules elementaires, dans le contexte des theories grand unifiees, basees sur un groupe de jauge G, au nombre des fibres de fibres principaux representant des monopoles fondamentaux. Ils sont en 1:1-correspondance avec les sous -groupes invariants du groupe de cohomologie H(k+1)(B:A) de la base de B et avec les coefficients dans le premier groupe d'homotopie non trivial, M(k)(G)=A, du groupe structural possedant la meme algebre de Lie 'Xi' que le groupe de jauge G SC- 001A02F02 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Particule fondamentale; Creation particule; Groupe jauge; Theorie groupe; Cohomologie; Theorie grande unification PR- SCI-FONDA/MATHEMATIQUES; DB- COHOMOLOGYTIODJEMAI1990CLASSICAL

AN- ---- TI- Global bounds of solutions for a strongly coupled system of reaction- diffusion equations AU- KIRANE M^ A2- KIRANE M^ CS- ^UNIV ANNABA, DEP MATHEMATIQUES, ANNABA 23000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ANNABA AF- UNIV ANNABA/ALGERIA JN- APPLICABLE ANALYSIS PD- 1991 DT- Periodique LA- English SC- 001A02F03 CC- 001A02 C1- MATHEMATIQUES C2- MATHEMATIQUES FD- Equation reaction diffusion; Systeme equation; Couplage fort; Solution bornee; Diffusion multicomposante PR- SCI-FONDA/MATHEMATIQUES; DB- GLOBALONSKIRANE1991APPLICABLE

AN- ---- TI- A capillary suction probe for bubble size measurement AU- BARIGOU M^GREAVES M^ A2- BARIGOU M^GREAVES M^ CS- ^UNIV SCI TECHNOLOGIE ORAN, INST GENIE MECANIQUE, ORAN 31000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- USTO/ALGERIA JN- MEASUREMENT SCIENCE & TECHNOLOGY PD- 1991 DT- Periodique LA- English AB- This paper descrives a fully submersible capillary suction probe technique developed for bubble size measurement in large-scale stirred- vessel reactors. The method uses a vacuum to continuously withdraw a small stream of gas-liquid dispersion through a short capillary tube with a funnel-shaped inlet. The automated bubble size measurement technique achieved very good reproducibility of results and very high rates of sampling from bubble sizes down to 0.3 mm diameter. Typical results obtained in a 1.0 m diameter stirred vessel are presented SC- 001A03A02A CC- 001A03 C1- INGENERIE ET TECHNOLOGIE C2- 001A03 FD- Bulle; Dimension; Appareil mesure; Sonde; Succion capillaire PR- ING&TECHN/METROLOGIE ET APPAREILLAGE SPECIFIQUES; DB- AEMEBARIGOU1991MEASUREMENT

AN- ---- TI- Stability analysis of erbium-doped fibre laser dynamics with spontaneous emission AU- KELLOU A^LADJOUZE H^SANCHEZ F^STEPHAN G^ A2- KELLOU A^LADJOUZE H^SANCHEZ F^STEPHAN G^ CS- ^USTHB, INST PHYSIQUE, LAB PHYSIQUE LASERS, ALGIER, ALGERIA^CNRS ENSSAT, EP001 LAB OPTRONIQUE, 22305 LANNION, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ALGER AF- USTHB/ALGERIA;CNRS/FRANCE JN- OPTICAL AND QUANTUM ELECTRONICS PD- 1995 DT- Periodique LA- English AB- A linear stability analysis of erbium-doped fibre laser dynamics including spontaneous emission is presented. It is shown that spontaneous emission favours the CW solution near threshold and pushes the unstable steady states towards higher values of the ion pair concentration in the case of a bad cavity. SC- 001B40B55W CC- 001B40 C1- PHYSIQUE C2- DOMAINES CLASSIQUES DE LA PHYSIQUE (Y COMPRIS LES APPLICATIONS) FD- 4255W; Laser solide; Fibre optique; Addition erbium; Emission spontanee; Stabilite; Etude theorique PR- SCI-FONDA/PHYSIQUE; DB- STABILITYSSIKELLOU1995OPTICAL

AN- ---- TI- Antireflection coating of TiO(2) study and deposition by the screen printing method AU- BOUKENNOUS Y^BENYAHIA B^CHARIF M^CHIKOUCHE A^ A2- BOUKENNOUS Y^BENYAHIA B^CHARIF M^CHIKOUCHE A^ CS- ^UDTS, PHOTOVOLTAIC CELLS LAB, 1017 ALGER GAREN ALGIERS, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- UDTS/ALGERIA JN- JOURNAL DE PHYSIQUE PD- 1995 DT- Periodique LA- English AB- We are developing the Screen Printing technique for depositing a single layer quarter wavelength thick antireflection coating of titanium dioxide on silicon substrate. The ink is composed by the titanium ethoxide as the organometallic compound, terpineol as the solvent and the octyphenoxy polyethoxy as the vehicle. It has been applied to 4 inch polished silicon wafers, dried then fired and characterized. The objective of our work was to control the deposition parameters and the ink viscosity to determine their effects on the layer properties. The thicknesses of the TiO(2) films were measured by the stylus technique using a profilometer. AES, RBS and X-Ray diffraction are used to analyse the layer and to determine its structure and composition according to firing temperatures. The reflection coefficient is measured as a function of the wavelength. As a result, we obtain TiO(2) coating thicknesses between 600 and 800 A and a minimum reflection near 600nm. SC- 001B40B79B CC- 001B40 C1- PHYSIQUE C2- DOMAINES CLASSIQUES DE LA PHYSIQUE (Y COMPRIS LES APPLICATIONS) FD- Compose mineral; 4279B; Compose binaire; Titane oxyde; Revetement optique; Depot; Cellule solaire; TiO2; O Ti PR- SCI-FONDA/PHYSIQUE; DB- ANTIREFLECTIONHODBOUKENNOUS1995JOURNAL

AN- ---- TI- Calculs statiques et dynamiques des poutres a parois minces a section fermee, de forme carree ou rectangulaire par la methode de Vlasov. (Static and dynamic calulations of thin-wall closed area beams, square- or rectangular-shape by the Vlasov's method) AU- MEZIANI S^ A2- MEZIANI S^ CS- ^UNIV SCI TECHNOLOGIE ORAN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- USTO/ALGERIA JN- EUROPEAN JOURNAL OF MECHANICAL ENGINEERING PD- 1995 DT- Periodique LA- French AB- Le present article touche aux problemes des calculs statiques et dynamiques des constructions a parois minces, sur la base du modele des portiques coques de Vlasov. Dans ce modele, les fonctions de forme permettent l'approximation de la forme des deformations reelles sur un segment entre deux noeuds. Dans toutes les recherches faites jusqu'a present, seules les fonctions de formes lineaires ont ete utilisees. Ces fonctions conduisent a des resultats approximatifs et en particulier, ceux de l'analyse des contraintes tangentielles, ne sont pas satisfaisantes. Le but de ce travail est l'amelioration de l'exactitude du modele des portiques-coques de Vlasov par l'introduction de fonctions de forme non lineaires du type polynomes de Legendre de haut rang. SC- 001B40F30C; 001B40F30M CC- 001B40; 001B40 C1- PHYSIQUE; PHYSIQUE C2- DOMAINES CLASSIQUES DE LA PHYSIQUE (Y COMPRIS LES APPLICATIONS); DOMAINES CLASSIQUES DE LA PHYSIQUE (Y COMPRIS LES APPLICATIONS) FD- Resistance materiau; Poutre paroi mince; Section carree; Section rectangulaire; Statique; Deformation; Reponse dynamique; Modele simulation; 4630C; 4630M PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- CALCULSHODMEZIANI1995EUROPEAN

AN- ---- TI- Low frequency scattering of elastic waves by a cavity using a matched asymptotic expansion method AU- BENCHEIKH L^ A2- BENCHEIKH L^ CS- ^UNIV SETIF, INST CHIMIE INDUSTRIELLE, SETIF 19000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SETIF AF- UNIV SETIF/ALGERIA JN- JOURNAL OF THE AUSTRALIAN MATHEMATICAL SOCIETY SERIES PD- 1995 DT- Periodique LA- English SC- 001B40F30M CC- 001B40 C1- PHYSIQUE C2- DOMAINES CLASSIQUES DE LA PHYSIQUE (Y COMPRIS LES APPLICATIONS) FD- Diffusion onde; Onde elastique; Developpement asymptotique raccorde; Basse frequence; Cavite; Methode numerique PR- SCI-FONDA/PHYSIQUE; DB- LOWHODBENCHEIKH1995JOURNAL

AN- ---- TI- Study of phase transition line of PZT ceramics by X-ray diffraction AU- BOUTARFAIA A^BOUDAREN C^MOUSSER A^BOUAOUD S^ A2- BOUTARFAIA A^BOUDAREN C^MOUSSER A^BOUAOUD S^ CS- ^UNIV CONSTANTINE, INST CHIMIE, DEP CHIMIE INORGANIQUE, CONSTANTINE 25000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA JN- CERAMICS INTERNATIONAL PD- 1995 DT- Periodique LA- English AB- The transition line between tetragonal and rhombohedral phases in PZT ceramics has been studied on the basis of X-ray diffraction data, with a view to establishing the morphotropic phase boundary (MPB). In ceramic manufacturing technology, piezoelectric PZT ceramic compositions are most likely to be near the morphotropic phase boundary. This boundary can move when even small levels of dopants are present in the PZT ceramics. SC- 001B60A50K CC- 001B60 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Compose mineral; Etude experimentale; Ceramique oxyde; PZT; Compose quaternaire; Plomb titanate; Plomb zirconate; XRD; Transformation phase; Materiau ferroelectrique; Additif; Materiau dope; Composition chimique; Structure cristalline; Addition fer; Addition nickel; Addition antimoine; 6150K; Pb(Ti,Zr)O3:Fe Ni Sb; O Pb Ti Zr PR- SCI-FONDA/PHYSIQUE; DB- STUDYCTIBOUTARFAIA1995CERAMICS

AN- ---- TI- Prediction of high pressure phase transition in Al compounds by the ionicity character AU- ZAOUI A^BOUHAFS B^FERHAT M^AOURAG H^ A2- ZAOUI A^BOUHAFS B^FERHAT M^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, SIDI-BEL-ABBES 22000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- PHYSICA STATUS SOLIDI PD- 1995 DT- Periodique LA- English SC- 001B60A50L; 001B60D70 CC- 001B60; 001B60 C1- PHYSIQUE; PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES; ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Compose mineral; Etude theorique; Transformation phase; Ionicite; Aluminium arseniure; Aluminium phosphure; Aluminium antimoniure; Compose binaire; Densite charge; Al Sb; Al P; 6150L; 6470; AlAs; AlSb; AlP; Al As PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- PREDICTIONTERZAOUI1995PHYSICA

AN- ---- TI- Synthesis and crystal structure of Cu(0.5)NbS(2) AU- KARS M^KHEIT M^REBBAH H^REBBAH A^ A2- KARS M^KHEIT M^REBBAH H^REBBAH A^ CS- ^UNIV SCI TECHNOLOGIE HOUARI BOUMEDIENE, INST CHIMIE, LAB CRISTALLOGRAPHIE CRISTALLOGENESE, DAR-EL-BEIDA ALGER, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- ANNALES DE CHIMIE PD- 1995 DT- Periodique LA- English SC- 001B60A66F1 CC- 001B60 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Metal transition Compose; Compose mineral; Cuivre Sulfure; Niobium Sulfure; Compose ternaire; 6166F; Cu0,5NbS2; Cu Nb S; Structure cristalline; XRD; Etude experimentale PR- SCI-FONDA/PHYSIQUE; DB- SYNTHESISNBSKARS1995ANNALES

AN- ---- TI- The surface properties of sputtered amorphous silicon thin films AU- AIDA M^BACHIRI R^ A2- AIDA M^BACHIRI R^ CS- ^UNIV CONSTANTINE, UNITE RECH PHYSIQUE MATERIAUX APPLICATIONS, 25000 CONSTANTINE, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA JN- JOURNAL OF NON-CRYSTALLINE SOLIDS PD- 1995 DT- Periodique LA- English AB- An investigation of the surface morphology and microstructure of sputtered amorphous silicon films deposited with different rf powers is reported. Both transmission and scanning electron microscopy observations indicate the presence of a polycrystalline layer at the free surface of films prepared at high rf power. The surface and bulk dark conductivities were determined using the three-contact method. The results confirm the presence of a polycrystalline layer at the free surface of the films. In order to understand the microstructure evolution from the film-substrate interface to the free surface, a growth model is suggested based on the substrate heating caused by the species from the plasma bombardment and the thermal conduction of the substrate. SC- 001B60H55G; 001B70C25 CC- 001B60; 001B70 C1- PHYSIQUE; PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES; ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Couche mince; Surface; Microstructure; SEM; TEM; Conductivite electrique; Preparation; Pulverisation cathodique; Mode operatoire; Surface libre; Etude experimentale; Etat amorphe; Addition hydrogene; Silicium; 6855G; 7325; a-Si:H PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- THEFILAIDA1995JOURNAL

AN- ---- TI- Thin SiO(2) growth by combined rapid thermal and plasma processing AU- BOUMAIZA N^ACHOUR S^TAYAR M^ A2- BOUMAIZA N^ACHOUR S^TAYAR M^ CS- ^UNIV CONSTANTINE, CERAMICS LAB, RES UNIT MATERIALS PHYSICS APPLICATIONS, CONSTANTINE 25000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA JN- THIN SOLID FILMS PD- 1995 DT- Periodique LA- English AB- Oxidation of silicon in a d.c. plasma combined with a lamp-heated process has been performed. The results show that for the same temperature this combination increases the film thickness with respect to the classical rapid thermal oxidation and furnace oxidation. A relatively short time and low-temperature processing lead to a low density of fixed charge. SC- 001B60H55G CC- 001B60 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Silicium oxyde; Couche mince; Oxydation; Depot plasma; Surface; Interface; Recuit rapide; Epaisseur; Taux croissance; Caracteristique capacite tension; Etude experimentale; Structure MOS; Fabrication microelectronique; 6855G PR- SCI-FONDA/PHYSIQUE; DB- THINSINBOUMAIZA1995THIN

AN- ---- TI- Electronic structure of the quaternary alloy Ga(x)In(1-x)As(y)P(1-y) AU- ABID H^BADI N^DRIZ M^BOUARISSA N^BENKABOU K^KHELIFA B^AOURAG H^ A2- ABID H^BADI N^DRIZ M^BOUARISSA N^BENKABOU K^KHELIFA B^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, SIDI-BEL-ABBES 22000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- MATERIALS SCIENCE & ENGINEERING PD- 1995 DT- Periodique LA- English AB- A method for calculating the electronic structure of the quaternary alloy Ga(x)In(1-x)AS(y)P(1-y) is presented. We have used the empirical pseudopotential method coupled with the virtual crystal approximation, which incorporates the compositional disorder as an effective potential. The electronic structure are studied for Ga(x)In(1- x)AS(y)P(1-x) (x = 0.5; y = 0.5) and Ga(x)In(1-x)AS(y)P(1- y) lattice matched to InP as well as GaAs. Good agreement with experiment is obtained for the calculated values of the direct energy gap and the bowing parameter at the 'Gamma' point of the InP -lattice-matched quaternary alloy. SC- 001B70A20F CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Structure electronique; Alliage quaternaire; Gallium phosphure; Gallium arseniure; Indium phosphure; Indium arseniure; Structure bande; Semiconducteur; Etat electronique; Methode pseudopotentiel; Bande interdite; Etude theorique; 7120F PR- SCI-FONDA/PHYSIQUE; DB- ELECTRONIC1-YABID1995MATERIALS

AN- ---- TI- Band structure calculation of GeSn and SiSn AU- AMRANE N^AIT ABDERRAHMANE S^AOURAG H^ A2- AMRANE N^AIT ABDERRAHMANE S^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, 22000 SIDI-BEL-ABBES, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- INFRARED PHYSICS & TECHNOLOGY PD- 1995 DT- Periodique LA- English AB- The band structure of GeSn and SiSn in zinc-blende structures is predicted using the empirical pseudopotential. Special emphasis is placed on the effects of inversions asymmetry such as ionicity. We found that GeSn exhibits a direct band gap whereas SiSn still remains indirect gap material. SC- 001B70A25P; 240 CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Etude theorique; Structure bande; Pseudopotentiel; Relation empirique; Densite charge; Germanium alliage; Etain alliage; Silicium alliage; Alliage binaire; 7125P; Alliage GeSn; Alliage SiSn; Ge Sn; Si Sn PR- SCI-FONDA/PHYSIQUE; DB- BANDSISAMRANE1995INFRARED

AN- ---- TI- Predicted modifications in the direct and indirect gaps of Si AU- BOUHAFS B^AOURAG H^ A2- BOUHAFS B^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, SIDI-BEL-ABBES 22000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- SOLID STATE COMMUNICATIONS PD- 1995 DT- Periodique LA- English AB- We have studied the effects of expansion of the lattice on fundamental band gaps in Si, with the use of an adjusted pseudopotential method. The results show that Si structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors and those of porous silicon. SC- 001B70A25R CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Silicium; Semiconducteur; Structure electronique; Structure bande; Pseudopotentiel; Bande interdite; Etat localise; Etude comparative; 7125R PR- SCI-FONDA/PHYSIQUE; DB- PREDICTEDGAPBOUHAFS1995SOLID

AN- ---- TI- Pressure dependence of electron and positron band structures in elemental semiconductors AU- ALKHAFAJI S^AMRANE N^BOUARISSA N^BADI N^SOUDINI B^SEHIL M^AOURAG H^ A2- ALKHAFAJI S^AMRANE N^BOUARISSA N^BADI N^SOUDINI B^SEHIL M^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, DEP PHYSICS, COMPUTATIONAL MATERIALS SCI LAB, SIDI-BEL-ABBES 22000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- PHYSICA STATUS SOLIDI PD- 1995 DT- Periodique LA- English AB- On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and 'Alpha' -Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure SC- 001B70A25R; 001B70A60 CC- 001B70; 001B70 C1- PHYSIQUE; PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES; ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Etude theorique; Effet pression; Structure bande; Materiau semiconducteur; Pseudopotentiel; Positon; Silicium; Germanium; Carbone; Etain; 7125R; 7160; Si; Ge; C; Sn PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- PRESSURECTOALKHAFAJI1995PHYSICA

AN- ---- TI- Conduction band edge charge densities in In(x)Ga(1-x)Sb AU- BOUARISSA N^AOURAG H^ A2- BOUARISSA N^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, DEP PHYSICS, COMPUTATIONAL MATERIALS SCI LAB, SIDIO-BEL-ABBES 22000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- PHYSICA STATUS SOLIDI PD- 1995 DT- Periodique LA- English AB- The empirical pseudopotential method coupled with the virtual crystal approximation which incorporates compositional disorder as an effective potential is used to compute the electronic conduction band edge charge densities at the 'Gamma' and X points for the ternary alloy In(x)Ga(1- x)Sb. It is found that these charge densities are strongly dependent upon the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors. SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Compose mineral; Structure bande; Bande conduction; Densite charge; Methode pseudopotentiel; Methode empirique; Potentiel effectif; Compose ternaire; Effet concentration; Etude theorique; Structure electronique; Indium antimoniure; Gallium antimoniure; 7125T; InxGa1 -xSb; Ga In Sb; Approximation cristal virtuel PR- SCI-FONDA/PHYSIQUE; DB- CONDUCTION1-XBOUARISSA1995PHYSICA

AN- ---- TI- Electronic and positronic structure of diamond under normal and high pressure AU- AOURAG H^AIT ABDERRAHMANE S^AMRANE N^AMRANE N^BOUARISSA N^ A2- AOURAG H^AIT ABDERRAHMANE S^AMRANE N^AMRANE N^BOUARISSA N^ CS- ^UNIV SIDI-ABEL-ABBES, COMPUTATIONAL MATERIALS SCI LAB, SIDI-ABEL- ABBES, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- PHYSICA STATUS SOLIDI PD- 1995 DT- Periodique LA- English AB- Empirical nonlocal pseudopotentials of diamond which can describe the electronic energy structure over a wide energy range of more than 20 eV from the bottom of the valence band are determined. The nonlocality of the potential is described by the Gaussian model. The optimized nonlocal pseudopotential reproduces the energy band structure within 5%. The valence electron and positron charge densities in diamond are obtained from wave functions derived from this model at normal and under hydrostatic pressure. It is found that the positron density is maximum in the open interstices and is excluded not only as usual, from the ion cores but also to a considerable degree from the valence bonds. SC- 001B70A25T; 001B70A60 CC- 001B70; 001B70 C1- PHYSIQUE; PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES; ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Structure electronique; Structure bande; Positon; Niveau energie; Positonium; Travail sortie; Etude theorique; Methode pseudopotentiel; Methode empirique; Theorie non locale; Effet pression; Pression hydrostatique; Haute pression; Diamant; 7125T; 7160; C PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- ELECTRONICSSUAOURAG1995PHYSICA

AN- ---- TI- Electronic structure of pseudobinary semiconductor alloys In(x)Ga(1- x)[In(x)Ga(1 -x)Sb] and InAs(x)Sb(1-x) AU- BOUARISSA N^AMRANE N^AOURAG H^ A2- BOUARISSA N^AMRANE N^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- INFRARED PHYSICS & TECHNOLOGY PD- 1995 DT- Periodique LA- English AB- A method calculating detailed electronic properties of the anionic and cationic pseudobinary In(x)Ga(1-x)Sb and InAs(x)Sb(1-x), semiconductor alloys is presented. The technique begins with realistic band structures obtained for the constituent compounds by fitting the band- gap symmetry-point energies to experimental data within the pseudopotential scheme. Then the virtual crystal approximation which incorporates compositional disordered as an effective potential is used to calculate the alloys band structures and charge densities. Detailed comparison between the theoretical predictions and experimental data demonstrate the quantitative nature of the method. Bowing parameters for the r, X, and L gaps are in good agreement with the experimental results. SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Compose mineral; 7125T; Etude theorique; Structure bande; Bande interdite; Pseudopotentiel; Densite charge; Indium antimoniure; Gallium antimoniure; Indium arseniure; Compose ternaire; Semiconducteur III-V; InxGa1-xSb; InAsxSb1-x; Ga In Sb; As In Sb PR- SCI-FONDA/PHYSIQUE; DB- ELECTRONIC1-XBOUARISSA1995INFRARED

AN- ---- TI- Positron energy levels in narrow gap semiconductors AU- BOUARISSA N^AOURAG H^ A2- BOUARISSA N^AOURAG H^ CS- ^UNIV SETIF, DEP PHYSICS, SETIF 19000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SETIF AF- UNIV SETIF/ALGERIA JN- MATERIALS SCIENCE & ENGINEERING PD- 1995 DT- Periodique LA- English AB- We have studied the behaviour of a positron in In(x)Ga(1-x)Sb and InAs(x)Sb(1-x) alloys by calculating their energy levels at different points of the reciprocal space at normal and under low pressure. The calculations are performed with the pseudopotential method and the virtual crystal approximation which incorporates the disorder effect as an effective potential coupled with the independent particle approximation. These energies determine quantities such as the positron and positronium work function and the deformation potentials which are important parameters in slow- positron beam experiments. SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Positon; Niveau energie; Semiconducteur; Structure bande; Diffusion; Indium antimoniure; Gallium antimoniure; Indium arseniure; Compose ternaire; Compose III-V; Reseau reciproque; Etude theorique; Surface; Interface; 7125T PR- SCI-FONDA/PHYSIQUE; DB- POSITRONCTOBOUARISSA1995MATERIALS

AN- ---- TI- Predicted modifications in the direct and indirect gaps of GaP AU- BOUHAFS B^FERHAT M^AMRANE N^KHELIFA B^AOURAG H^ A2- BOUHAFS B^FERHAT M^AMRANE N^KHELIFA B^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- INFRARED PHYSICS & TECHNOLOGY PD- 1995 DT- Periodique LA- English AB- We have studied the effects of expansion of the lattice on fundamental band gaps in GaP, with the use of an adjusted pseudopotential method. The results show that GaP structure becomes a direct band gap. A correlation is given with the properties of tetrahedrally filled semiconductors. SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Compose mineral; 7125T; Etude theorique; Structure bande; Bande interdite; Pseudopotentiel; Parametre cristallin; Densite charge; Gallium phosphure; Semiconducteur III-V; GaP; Ga P PR- SCI-FONDA/PHYSIQUE; DB- PREDICTEDGAPBOUHAFS1995INFRARED

AN- ---- TI- Theoretical investigation of the pressure dependences of energy gaps in InAs and InSb AU- BOUARISSA N^AOURAG H^ A2- BOUARISSA N^AOURAG H^ CS- ^UNIV SETIF, DEP PHYSICS, 19000 SETIF, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SETIF AF- UNIV SETIF/ALGERIA JN- MATERIALS SCIENCE & ENGINEERING PD- 1995 DT- Periodique LA- English AB- The observed dependences on pressure of the energy gaps in InAs and InSb at symmetry points in the Brillouin zone are successfully calculated using an empirical method based on the pseudopotential method. The negative pressure derivatives of the gaps at the X points of the conduction band relative to the valence band maxima are due to the d states. SC- 001B70A55E CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Effet pression; Bande interdite; Indium arseniure; Indium antimoniure; Semiconducteur; Etat electronique; Transition phase; Compose III-V; Zone Brillouin; Methode pseudopotentiel; Densite etat; Etude theorique; 7155E PR- SCI-FONDA/PHYSIQUE; DB- THEORETICALINSBOUARISSA1995MATERIALS

AN- ---- TI- Conductivity of boron-implanted polycrystalline thin silicon films AU- MANSOUR F^BOUCHEMAT M^BOUKEZZATA M^TOUIDJEN N^BIELLE DASPET D^ MIROUH K^ A2- MANSOUR F^BOUCHEMAT M^BOUKEZZATA M^TOUIDJEN N^BIELLEDASPET D^ MIROUH K^ CS- ^UNIV CONSTANTINE, INST ELECTRONIQUE, 25000 CONSTANTINE, ALGERIA^CNRS, LAAS, 31077 TOULOUSE, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA;CNRS/FRANCE JN- THIN SOLID FILMS PD- 1995 DT- Periodique LA- English AB- Sub-micron thin films of polycrystalline silicon obtained by low- pressure chemical vapor deposition, boron-implanted (amount varying from 10(12) to 10(16) cm(-2)), and annealed at 760 C for 26 h under an oxygen ambient (dry O(2)) have been characterized in terms of structural and electrical properties. The results obtained are correlated first with the Hall-effect measurements, which gives the resistivity p, the concentration of the free carriers p and the mobility 'Mu' , and in the second part with the observations of transmission electron microscopy (TEM), which gives the size of grains. The variations of p, p and 'Mu' have been studied as a function of the dopant concentration. A low rate of activation has been measured (40%) and a very low value of the mobility 'Mu' has been noted (3 cm(2) V(-1) s(-1)) as well as small grain size. These results have been discussed both qualitatively and quantitatively, based on the existence of phenomena of carrier trapping and dopant segregation at the grain boundaries. SC- 001B70C61C CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Conductivite electrique; Bore; Propriete electrique; Mesure electrique; Effet Hall; Segregation; Couche mince; Polycristal; Silicium; Dopage; Recuit; Mobilite porteur charge; Concentration porteur charge; TEM; Etude experimentale; Addition bore; Traitement thermique; Si:B; 7361C PR- SCI-FONDA/PHYSIQUE; DB- CONDUCTIVITYFILMANSOUR1995THIN

AN- ---- TI- Correlation between the gap states density and the modes of hydrogen incorporation in a-Si:H as a function of deposition conditions and thermal annealing AU- CHAHED L^ZELLAMA K^SLADEK P^THEYE M^ROCA I CABARROCAS P^MANSOURI I^BOUHDADA A^ A2- CHAHED L^ZELLAMA K^SLADEK P^THEYE M^ROCA I CABARROCAS P^MANSOURI I^BOUHDADA A^ CS- ^INST PHYSIQUE ORAN ES-SENIA, LAB OBTIQUE COUCHES MINCES, UNITE RECH PHYSIQUE, ORAN, ALGERIA^FAC SCI AMIENS, LAB PHYSIQUE COUCHES MINCES, 80039 AMIENS, FRANCE^CNRS UNIV PARIS VII, URA 17 GROUPE PHYSIQUE SOLIDES, 75251 PARIS, FRANCE^CNRS UNIV P ET M CURIE, URA 781 LAB OPTIQUES SOLIDES, 75252 PARIS, FRANCE^CNRS ECOLE POLYTECH, LAB PHYSIQUE INTERFACES COUCHES MINCES, 91128 PALAISEAU, FRANCE^FAC SCI AIN CHOCK, CASABLANCA, MOROCCO^ CO- ALGERIA;FRANCE;FRANCE;FRANCE;FRANCE;MOROCCO RE- ALGERIA;FRANCE;FRANCE;FRANCE;FRANCE;PAYS DU MAGHREB VI- ORAN AF- UNIV ORAN/ALGERIA;UNIV AMIENS/FRANCE;CNRS/FRANCE;CNRS/FRANCE;CNRS/FRANCE;UNIV CASABLANCA/MOROCCO JN- ANNALES DE CHIMIE PD- 1994 DT- Periodique LA- English SC- 001B70C61J; 001B60A72C CC- 001B70; 001B60 C1- PHYSIQUE; PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES; ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Compose mineral; Etude experimentale; Couche mince; Silicium; Structure electronique; Densite electron; Densite etat; Recuit thermique; 7361J; 6172C PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- CORRELATIONINGCHAHED1994ANNALES

AN- ---- TI- Magnetic structure of (001), (110) and (111) surfaces of FeV AU- BOUZAR H^BENAKKI M^MOKRANI A^DEMANGEAT C^DREYSSE H^WANDELT K^ A2- BOUZAR H^BENAKKI M^MOKRANI A^DEMANGEAT C^DREYSSE H^WANDELT K^ CS- ^UNIV TIZI-OUZOU, DEP PHYSIQUE, 15000 TIZI-OUZOU, ALGERIA^LPME EA1153 DS 4, 44072 NANTES, FRANCE^IPCMS-GEMME, 67037 STRASBOURG, FRANCE^RHEINISCHE FRIEDRICH-WILHELMS UNIV, INST PHYSIKALISCHE THEORETISCHE CHEMIE, 53115 BONN, GERMANY^ CO- ALGERIA;FRANCE;FRANCE;GERMANY RE- ALGERIA;FRANCE;FRANCE;EUROPE VI- TIZI OUZOU AF- UNIV TIZI OUZOU/ALGERIA;CNRS/FRANCE;IPCMS GEMME/FRANCE;RHEINISCHE FRIEDRICH WILHELMS UNIV/GERMANY JN- SURFACE SCIENCE PD- 1995 DT- Periodique LA- English AB- We have investigated the magnetic properties of semi-infinite systems of the ordered FeV in the CsCl structure. We use a self- consistent real-space tight-binding method in the unrestricted Hartree-Fock approximation to the Hubbard Hamiltonian. The magnetic moment at low- index surfaces (001) and (111) of perfectly ordered Fe(0.5)V(0.5) depends dramatically on the chemical component present at the surface. When Fe is at the surface, magnetic moments of 1.5 'Mu' (B) are obtained. The (110) structure contains both Fe and V and its magnetization is smaller. SC- 001B70E30P; 240 CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Metal transition alliage; Etude theorique; Structure magnetique; Moment magnetique; Propriete surface; Approximation liaison forte; Fer alliage; Vanadium alliage; Alliage binaire; 7530P; Alliage FeV; Fe V PR- SCI-FONDA/PHYSIQUE; DB- MAGNETICFEVBOUZAR1995SURFACE

AN- ---- TI- Pressure dependence of positron annihilation in germanium AU- BOUARISSA N^KOBAYASI T^NARA H^AOURAG H^ A2- BOUARISSA N^KOBAYASI T^NARA H^AOURAG H^ CS- ^UNIV SETIF, DEP PHYSICS, 19000 SETIF, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SETIF AF- UNIV SETIF/ALGERIA JN- SOLID STATE COMMUNICATIONS PD- 1995 DT- Periodique LA- English AB- Electron-positron momentum densities are calculated for the (001- 110) plane in Ge at normal and increased pressure. The calculations are based on the independent particule approximation coupled with the pseudopotential method. The shapes of the profiles indicate that the angular correlation of positron annihilation radiation (ACPAR) along different crystallographic directions in Ge are highly sensitive to pressure. SC- 001B70H70B CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Effet pression; Annihilation positon; Germanium; Semiconducteur; Etat electronique; Correlation angulaire; Haute pression; Etude theorique; 7870B PR- SCI-FONDA/PHYSIQUE; DB- PRESSUREIUMBOUARISSA1995SOLID

AN- ---- TI- Structure and morphology of M(6)C carbides formed by solidification in some nickel-based alloys AU- LEBAILLI S^HAMAR R^HAMAR THIBAULT S^MANSOURI I^BOUHDADA A^ A2- LEBAILLI S^HAMAR R^HAMAR THIBAULT S^MANSOURI I^BOUHDADA A^ CS- ^USTHB, INST GENIE MECANIQUE, DEP METALLURGIE, ALGER, ALGERIA^IUT 1 CHIMIE, GRECA, 38000 GRENOBLE, FRANCE^INP GRENOBLE, LTPCM, 38402 SAINT MARTIN D'HERES, FRANCE^FAC SCI AIN CHOCK, CASABLANCA, MOROCCO^ CO- ALGERIA;FRANCE;FRANCE;MOROCCO RE- ALGERIA;FRANCE;FRANCE;PAYS DU MAGHREB VI- ALGER AF- USTHB/ALGERIA;UNIV GRENOBLE/FRANCE;INPG/FRANCE;UNIV CASABLANCA/MOROCCO JN- ANNALES DE CHIMIE PD- 1994 DT- Periodique LA- English SC- 001B80A30F; 001B60D80G CC- 001B80; 001B60 C1- PHYSIQUE; PHYSIQUE C2- DOMAINES INTERDISCIPLINAIRES: SCIENCE DES MATERIAUX; RHEOLOGIE; ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Compose mineral; Etude experimentale; Alliage base nickel; Carbure; Solidification; Microstructure; 8130F; 6480G PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- STRUCTUREOYSLEBAILLI1994ANNALES

AN- ---- TI- Calorimetric study of pre-precipitation and precipitation in Al-Mg alloy AU- NEBTI S^HAMANA D^CIZERON G^ A2- NEBTI S^HAMANA D^CIZERON G^ CS- ^UNIV CONSTANTINE, RES UNIT MATERIALS PHYSICS APPLICATIONS, ALGERIA^UNIV PARIS-SUD, STRUCTURE METALLIC MATERIALS LAB, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA;UNIV PARIS/FRANCE JN- ACTA METALLURGICA ET MATERIALIA PD- 1995 DT- Periodique LA- English AB- Precipitation sequence and changes in microhardness measurements of Al- 8wt%Mg and Al-12wt%Mg alloys have been investigated by differential scanning calorimetry (DSC). It has been confirmed that the most important hardening is caused by the formation of the intermediate particles '(Al(3)Mg(2)) which precipitate at temperatures above the reversion temperature of the GP zones. The ' particles nucleation occurs certainly on structural heterogeneities introduced by quenching (dislocations formed by the collapse and shear of discs of vacancies). When the amount of the heterogeneities facilitating the nucleation of ' (the intermediate phase) decreases a direct formation of (the equilibrium phase) is observed. SC- 001B80A40C; 240 CC- 001B80 C1- PHYSIQUE C2- DOMAINES INTERDISCIPLINAIRES: SCIENCE DES MATERIAUX; RHEOLOGIE FD- Transformation phase; Precipitation; Microdurete; Vieillissement; Zone Guinier Preston; Durcissement; DSC; Etude experimentale; Alliage base aluminium; Magnesium alliage; Alliage binaire; Alliage Al92Mg8; Alliage Al88Mg12; Al Mg; 8140c PR- SCI-FONDA/PHYSIQUE; DB- CALORIMETRICALLNEBTI1995ACTA

AN- ---- TI- Prevision de comportement en recristallisation secondaire des grains d'orientation {110} dans Fe3%Si a partir de la fonction texture du materiau. Microstructures et recristallisation. (Constitutive prediction in secondary recristallization of {110} orientation grains in Fe3%Si from texture) AU- ROUAG N^PENELLE R^ A2- ROUAG N^PENELLE R^ CS- ^UNIV CONSTANTINE, INST PHYSIQUE, DEP PHYSIQUE SOLIDE, CONSTANTINE, ALGERIA^CNRS UNIV PARIS-SUD, URA1107 LAB METALLURGIE STRUCTURALE, 91405 ORSAY, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA;CNRS/FRANCE JN- JOURNAL DE PHYSIQUE PD- 1995 DT- Periodique LA- French AB- La croissance anormale des grains de GOSS semble liee a l'existence d'un voisinage cristallographique favorable. L'aptitude d'un grain a croitre de facon anormale peut etre reliee a la texture cristallographique du materiau et a la nature des joints. Le probleme revient a determiner une distribution moyenne de desorientations C.S.L., autour de l'orientation consideree. Le principe de calcul est fonde sur deux facteurs, l'un cristallographique, l'autre ponderal. Dans un premier temps, nous definissons dans l'espace d'Euler les regions formant des desorientations de type C.S.L. avec {110} ; cette etape consiste a etablir des cartes de desorientations potentielles, qui definissent les domaines favorables a la croissance de cette composante, dans l'espace des orientations. Dans la deuxieme etape, la fonction texture du materiau permet d'introduire une probabilite dans cette aptitude a la croissance. Une analyse parallele des cartes de desorientations et de la texture du materiau permet de faire des Previsions de comportement des grains {110} en croissance anormale. SC- 001B80A40E CC- 001B80 C1- PHYSIQUE C2- DOMAINES INTERDISCIPLINAIRES: SCIENCE DES MATERIAUX; RHEOLOGIE FD- Metal transition alliage; Recristallisation secondaire; Croissance grain; Anomalie; Desorientation joint grain; Reseau site coincidence; Etude theorique; Texture; Texture Goss; Tole; Alliage binaire; Alliage base fer; Silicium alliage; 8140E; Alliage Fe97Si3; Fe Si PR- SCI-FONDA/PHYSIQUE; DB- PREVISIONTURROUAG1995JOURNAL

AN- ---- TI- Etude numerique et experimentale des transferts de matiere et de quantite de mouvement dans un ecoulement annulaire laminaire non etabli. (Numerical and experimental study of mass and momentum transfer in developing laminar flow in annulus) AU- OULD ROUIS M^SALEM A^LEGRAND J^NOUAR C^ A2- OULD ROUIS M^SALEM A^LEGRAND J^NOUAR C^ CS- ^USTHB, INST PHYSIQUE, LAB MECANIQUE FLUIDES, ALGER, ALGERIA^IUT SAINT-NAZAIRE, LAB GENIE PROCEDES, 44606 SAINT-NAZAIRE, FRANCE^CNRS, URA NO 875 LEMTA, 54504 VANDOEUVRE, FRANCE^ CO- ALGERIA;FRANCE;FRANCE RE- ALGERIA;FRANCE;FRANCE VI- ALGER AF- USTHB/ALGERIA;UNIV ST NAZAIRE/FRANCE;CNRS/FRANCE JN- INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER PD- 1995 DT- Periodique LA- French AB- Les caracteristiques hydrodynamiques et du transfert de matiere ont ete determinees dans la region d'entree d'un espace annulaire cylindrique dans le cas d'un developpement simultane des champs de vitesse et de concentration. La resolution numerique du probleme a ete faite par la methode des differences finies en utilisant les hypotheses de la couche limite. Deux types de conditions aux limites ont ete consideres a l'entree de l'espace annulaire: vitesse axiale uniforme et vitesse axiale correspondant a celle en sortie d'un milieu poreux, de maniere a obeir aux conditions experimentales. Les profils de vitesse ont ete determines par velocimetrie laser a differentes distances de l'entree et pour differentes valeurs du nombre de Reynolds. Les gradients parietaux de vitesse et les coefficients locaux de transfert de matiere ont ete obtenus sur des microelectrodes en mettant en oeuvre une methode polarographique. SC- 001B40G60; 001B40G15C CC- 001B40; 001B40 C1- PHYSIQUE; PHYSIQUE C2- DOMAINES CLASSIQUES DE LA PHYSIQUE (Y COMPRIS LES APPLICATIONS); DOMAINES CLASSIQUES DE LA PHYSIQUE (Y COMPRIS LES APPLICATIONS) FD- Ecoulement laminaire; Conduite annulaire; Couche limite; Transfert chaleur; Transfert quantite mouvement; Methode electrochimique; Etude experimentale; Simulation numerique; Distribution vitesse; Echangeur chaleur; Reacteur chimique; 4760; 4715C PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- ETUDEULUOULD1995INTERNATIONAL

AN- ---- TI- Evolution structurale et nature des liaisons de quelques composes polyanioniques des systemes IIB-V-VII. (Structural evolution and bonds nature of some IIB-V-VII polyanionic compounds) AU- REBBAH H^REBBAH A^ A2- REBBAH H^REBBAH A^ CS- ^UNIV SCI TECHNOLOGIE HOUARI BOUMEDIENE, INST CHIMIE, LAB CRISTALLOGRAPHIE CRISTALLOGENESE, DAR-EL-BEIDA, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- JOURNAL OF SOLID STATE CHEMISTRY PD- 1994 DT- Periodique LA- French SC- 001B60A66F2; 001B60A66F3 CC- 001B60; 001B60 C1- PHYSIQUE; PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES; ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Metal transition compose; Compose mineral; Mercure compose; Cadmium compose; Halogenure; Article synthese; Compose ternaire; Structure cristalline; Mode liaison; Phosphure; Arseniure; Antimoniure; Materiau semiconducteur; Polyanion; Non stoechiometrie; Coordinence; 6166F PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- EVOLUTIONNDSREBBAH1994JOURNAL

AN- ---- TI- Synthese et etude structurale de Cd(4)P(2)Br(3). (Synthesis and crystal structure of Cd(4)P(2)Br(3)) AU- KASSAMA I^KHEIT M^REBBAH A^ A2- KASSAMA I^KHEIT M^REBBAH A^ CS- ^UNIV SCI TECHNOLOGIE HOUARI BOUMEDIENE, INST CHIMIE, LAB CRISTALLOGRAPHIE CRISTALLOGENESE, DAR-EL-BEIDA, ALGER, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- JOURNAL OF SOLID STATE CHEMISTRY PD- 1994 DT- Periodique LA- French SC- 001B60A66F2 CC- 001B60 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Compose mineral; Metal transition compose; Etude experimentale; XRD; Structure cristalline; Compose ternaire; Cadmium bromure; Cadmium phosphure; Bromophosphure; 6166F; Cd4P2Br3; Br Cd P PR- SCI-FONDA/PHYSIQUE; DB- SYNTHESEUREKASSAMA1994JOURNAL

AN- ---- TI- The InSb(100) surface change during the argon ion bombardment and the electron stimulated oxidation AU- BOUSLAMA M^JARDIN C^GHAMNIA M^ A2- BOUSLAMA M^JARDIN C^GHAMNIA M^ CS- ^ENSET ORAN, DEP PHYSIQUE, ORAN EL-MNAOUAR, ALGERIA^UNIV CLAUDE BERNARD, LAB MINERALOGIE-CRISTALLOGRAPHIE, 69622 VILLEURBANNE, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ORAN AF- ENSET/ALGERIA;UNIV LYON/FRANCE JN- VACUUM PD- 1995 DT- Periodique LA- English SC- 001B60A80F; 001B80A60C CC- 001B60; 001B80 C1- PHYSIQUE; PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES; DOMAINES INTERDISCIPLINAIRES: SCIENCE DES MATERIAUX; RHEOLOGIE FD- Compose mineral; Etude experimentale; Materiau semiconducteur; Compose binaire; Indium antimoniure; Spectrometrie Auger; Spectrometrie perte energie electron; Nettoyage surface; Gravure faisceau ionique; Argon ion; Oxydation; Faisceau electronique; Structure ilot; Traitement surface; 6180F; 8160C; InSb; In Sb PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- THEIONBOUSLAMA1995VACUUM

AN- ---- TI- Thickness variation effects on X-ray scattering of multilayers AU- BOUFELFEL AHMED^FALCO C^ A2- BOUFELFEL AHMED^FALCO C^ CS- ^CENT UNIV GUELMA, GUELMA 24000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- GUELMA AF- UNIV GUELMA/ALGERIA JN- THIN SOLID FILMS PD- 1995 DT- Periodique LA- English AB- A cosine-squared flux distribution from a disk-shaped source was used to calculate the spatial deposition profiles for films sputtered onto rotating substrates. Depositions were made by a stable and reproducible d.c. sputtering machine and thicknesses measured by Rutherford backscattering spectroscopy to compare with this calculation. The measured and calculated profiles were compared at a fixed value of target-substrate distance. We showed for the first time that the thickness variation is largely responsible for the broadening of the X- ray Bragg peaks at low angles of Fe/Pd multilayers. These results have important implications for the classical interpretation of X-ray scattering from multilayered structures SC- 001B60H55J CC- 001B60 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Couche mince; Epaisseur; Couche multimoleculaire; Diffusion RX; Depot physique phase vapeur; Pulverisation irradiation; Retrodiffusion Rutherford; Diffraction Bragg; Etude comparative; 6855J PR- SCI-FONDA/PHYSIQUE; DB- THICKNESSAYEBOUFELFEL1995THIN

AN- ---- TI- WSe(2) thin-film realization by synthesis and by tarnishing AU- KHELIL A^ESSAIDI H^BERNEDE J^BOUACHAERIA A^POUZET J^ A2- KHELIL A^ESSAIDI H^BERNEDE J^BOUACHAERIA A^POUZET J^ CS- ^UNIV ORAN ES SENIA, LAB PHYSIQUE MATERIAUX COMPOSANTS ELECTRONIQUE, ORAN, ALGERIA^UNIV NANTES, LAB PHYSIQUE MATERIAUX ELECTRONIQUE, 44072 NANTES, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ORAN AF- UNIV ORAN/ALGERIA;UNIV NANTES/FRANCE JN- JOURNAL OF PHYSICS CONDENSED MATTER PD- 1994 DT- Periodique LA- English AB- Thin W films were deposited by RF sputtering onto a glass substrate and then covered with an Se layer. The WSe(2) layers were obtained either by annealing the W layers in a vacuum sealed Pyrex tube or by the tarnishing reaction of Se vapour on W films. The properties of the thin WSe(2) films made by synthesis and by tamishing are described. The layers were examined by x-ray diffraction, x-ray photoelectron spectroscopy, scanning and transmission electron microscopy, electron microprobe analysis, optical transmission and resistivity measurements. The films crystallize in the hexagonal structure. It has been found that stoichiometric layers are obtained after synthesis while layers obtained by tamishing are partly oxidized SC- 001B60H55J CC- 001B60 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE, PROPRIETES MECANIQUES ET THERMIQUES FD- Metal transition; Metal transition compose; Etude experimentale; Couche mince; Croissance cristalline; Pulverisation cathodique; Tungstene; Compose mineral; Compose binaire; Tungstene seleniure; Ternissement; Reaction chimique; Pulverisation haute frequence; Recuit; Caracterisation; XRD; Spectrometrie photoelectron; Rayon X; SEM; TEM; 6855J; WSe2; Se W PR- SCI-FONDA/PHYSIQUE; DB- WSEHINKHELIL1994JOURNAL

AN- ---- TI- Pressure dependence of the electronic structure in germanium AU- BOUARISSA N^TANTO A^AOURAG H^BENT MEZIANE T^ A2- BOUARISSA N^TANTO A^AOURAG H^BENT MEZIANE T^ CS- ^UNIV SETIF, PHYSICS DEP, SETIF 19000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SETIF AF- UNIV SETIF/ALGERIA JN- COMPUTATIONAL MATERIALS SCIENCE PD- 1995 DT- Periodique LA- English AB- Based on the pseudopotential formalism of Ge, which can describe the electronic energy structure over a wide energy range of more than 20 eV from the bottom of the valence band, calculations of the pressure dependence of the energy gaps and charge densities have been performed. The predictions for the pressure coefficient are consistent with the experiment. The valence charge densities of Ge under high pressure are studied. The forbidden X-ray structure factor F(222) is stable under pressure and varies less than 3% under volume changes as big as 5% SC- 001B70A25R CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Etude theorique; Structure bande; Bande interdite; Effet pression; Densite charge; Pseudopotentiel; Methode moindre carre; Germanium; 7125R; Ge PR- SCI-FONDA/PHYSIQUE; DB- PRESSUREIUMBOUARISSA1995COMPUTATIONAL

AN- ---- TI- Band structure calculations of Ga(1-x)Al(x)As, GaAs(1-x)P(x) and AlAs under pressure AU- AOURAG H^FERHAT M^BOUHAFS B^BOUARISSA N^ZAOUI A^AMRANE N^KHELIFA B^ A2- AOURAG H^FERHAT M^BOUHAFS B^BOUARISSA N^ZAOUI A^AMRANE N^KHELIFA B^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, SIDI-BEL-ABBES 22000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- COMPUTATIONAL MATERIALS SCIENCE PD- 1995 DT- Periodique LA- English AB- The band structure of Ga(1-x)Al(x)As and GaAs(1-x)P(x) cation and anion alloys respectively are calculated within the virtual crystal approximation using an adjusted empirical pseudopotential scheme, which incorporates compositional disorder as an effective potential. It is shown that the present theory, which is free from any additional parameter, satisfactorily produces the band-gap bowings. The effect of alloying was correlated to the effect of positive and negative pressure in AlAs. We have also calculated the variation of the ionicity of these alloys under pressure, the results are linked to the high pressure phase transitions SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Compose mineral; Etude theorique; Structure bande; Effet pression; Pseudopotentiel; Bande interdite; Ionicite; Effet concentration; Courbure bande; Semiconducteur III-V; Gallium arseniure; Aluminium arseniure; Gap; Compose ternaire; Compose binaire; As Ga P; Al As; 7125T; Ga1-xAlxAs; GaAs1-xPx; AlAs; Al As Ga PR- SCI-FONDA/PHYSIQUE; DB- BANDSSUAOURAG1995COMPUTATIONAL

AN- ---- TI- Band structure of Ga(1-x)Al(x)P under a unixial stress AU- BADI N^SOUDINI A^AMRANE N^HAMMADI M^DRIZ M^KHELIFA B^AOURAG H^ A2- BADI N^SOUDINI A^AMRANE N^HAMMADI M^DRIZ M^KHELIFA B^AOURAG H^ CS- ^UNIV SIDI-BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, SIDI-BEL-ABBES 22000, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- COMPUTATIONAL MATERIALS SCIENCE PD- 1994 DT- Periodique LA- English AB- The band structure of Ga(1-x)Al(x)P under a uniaxial stress is calculated in the virtual crystal approximation (VCA) using the empirical pseudopotential method (EPM). We discuss the optical transitions in this system under a static uniaxial compression and a tension along a cubic direction [100], on the light of the change in energy caused by these stresses for states of high symmetry near the top of the valence band and the bottom of the conduction band SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Compose mineral; Etude theorique; Structure bande; Contrainte uniaxiale; Pseudopotentiel; Transition niveau energie; Gallium phosphure; Aluminium phosphure; Compose ternaire; Semiconducteur III -V; 7125T; Ga1-xAlxP; Al Ga P PR- SCI-FONDA/PHYSIQUE; DB- BANDESSBADI1994COMPUTATIONAL

AN- ---- TI- Correlation between high-pressure effects and alloying in GaP and AlP AU- KALAI H^KHELIFA B^BADI N^ABID H^AMRANE N^SOUDINI B^AOURAG H^ A2- KALAI H^KHELIFA B^BADI N^ABID H^AMRANE N^SOUDINI B^AOURAG H^ CS- ^UNIV ORAN, INST PHYSIQUE, LAB OPTIQUE, 31100 ORAN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- UNIV ORAN/ALGERIA JN- MATERIALS CHEMISTRY AND PHYSICS PD- 1995 DT- Periodique LA- English AB- The variation of the direct and indirect band gap of GaP and AJP has been calculated using the adjusted empirical pseudopotential method. The gap varies sublinearly with pressure but linearly with lattice constant. These results are discussed in the light of experimental results. The direct band gap increases with increasing pressure, whereas the indirect gap decreases. The effect of high pressure is correlated with the effect of alloying in Ga(x)Al(1-x)P SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Correlation; Pseudopotentiel; Haute pression; Effet pression; Alliage(action); Effet alliage; Gallium phosphure; Aluminium phosphure; Compose binaire; Bande interdite; Compose ternaire; Etude theorique; Parametre cristallin; GaP; AlP; Al P; Ga P; 7125T PR- SCI-FONDA/PHYSIQUE; DB- CORRELATIONALPKALAI1995MATERIALS

AN- ---- TI- Pressure dependent properties of boron phosphide AU- BADI N^AMRANE N^ABID H^DRIZ M^SOUDINI B^KHELIFA B^AOURAG H^ A2- BADI N^AMRANE N^ABID H^DRIZ M^SOUDINI B^KHELIFA B^AOURAG H^ CS- ^UNIV SIDI BEL-ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, 22000 SIDI BEL-ABBES, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- PHYSICA STATUS SOLIDI PD- 1994 DT- Periodique LA- English AB- An adjusted local pseudopotential method is used to obtain the electronic band structure of boron phosphide under pressure. The electronic charge density distributions are computed at several points of the valence and conduction band edges. These charge densities are used to study the modification of the bonding and electronic properties of the compound with respect to different volumes ranging from 0.75 V(0) to V(0) SC- 001B70A25T CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Compose mineral; Etude theorique; Structure bande; Pseudopotentiel; Effet pression; Densite charge; Bande interdite; Module compression; Transition niveau energie; Bore phosphure; 7125T; BP; B P PR- SCI-FONDA/PHYSIQUE; DB- PRESSUREIDEBADI1994PHYSICA

AN- ---- TI- Investigation of the hole resonant energies in GaAs-AlGaAs double- barrier AU- SEKKAL N^ZITOUNI K^KADRI A^ A2- SEKKAL N^ZITOUNI K^KADRI A^ CS- ^UNIV SIDI BEL ABBES, PHYSICS DEP, COMPUTATIONAL MATERIALS SCI LAB, 22000 SIDI BEL ABBES, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- SBA AF- UNIV SBA/ALGERIA JN- SUPERLATTICES AND MICROSTRUCTURES PD- 1994 DT- Periodique LA- English AB- A rigorous calculation of the resonant energies corresponding to valence sub-band hole transmission maxima is presented for GaAs/AlGaAs double-barrier heterostructures, employing the k.p method, the envelope-function approximation, and transfer matrix techniques. Incident waves associated with both the two light-hole and two heavy- hole bands are treated explicitly SC- 001B70C40G CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Compose mineral; Effet tunnel; Sous bande; Bande valence; Structure 2 barrieres; Heterostructure; Fonction enveloppe; Matrice transfert; Etude theorique; Resonance; Niveau energie; Materiau semiconducteur; Compose binaire; Compose ternaire; Gallium arseniure; Aluminium arseniure; 7340G; GaAs; As Ga; Al0,3Ga0,7As; Al As Ga PR- SCI-FONDA/PHYSIQUE; DB- INVESTIGATIONRIESEKKAL1994SUPERLATTICES

AN- ---- TI- AC magnetic susceptibility and microwave absorption study of GdBa(2- x)La(x)Cu(3)O(7) high temperature superconductors AU- ZANOUN Y^NICOLAS M^BURGER J^RABII M^ALQUIE G^ A2- ZANOUN Y^NICOLAS M^BURGER J^RABII M^ALQUIE G^ CS- ^UNIV ORAN, INST PHYSIQUE, LEMIA, 31100 ES-SENIA ORAN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- UNIV ORAN/ALGERIA JN- SOLID STATE COMMUNICATIONS PD- 1995 DT- Periodique LA- English AB- The GdBa(2-x)La(x)Cu(3)O(7) series has been prepared and studied by XRD, magnetic a.c. susceptibility and microwave absorption. The transition temperature T(c), as a function of the doping level, shows a nonlinear variation in two steps indicating a hole filling phenomenon joined to an oxygen reorganization between a and b axis. Microwave absorption study confirms the decrease of the dephasing field H(d) of the Josephson junctions as increasing the La ratios. The irreversible domain studied by a.c. susceptibility is reduced and the Ba substitution by La does not constitute a defect for pinning the vortices into the structure SC- 001B70D72J CC- 001B70 C1- PHYSIQUE C2- ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- Supraconducteur; XRD; Temperature transition; Jonction Josephson; Susceptibilite magnetique; Defaut; Baryum oxyde; Lanthane oxyde; Cuivre oxyde; Compose n elements; GdBa2-xLaxCu3O7; Ba Cu Gd La O; 7472J PR- SCI-FONDA/PHYSIQUE; DB- ACORSZANOUN1995SOLID

AN- ---- TI- R.f. plasma deposition from hexamethyldisiloxane-oxygen mixtures AU- SAHLI S^SEGUI Y^RAMDANI S^TAKKOUK Z^ A2- SAHLI S^SEGUI Y^RAMDANI S^TAKKOUK Z^ CS- ^UNIV CONSTANTINE, INST ELECTRONIQUE, UNITE RECH PHYSIQUE MATERIAUX APPLICATIONS, CONSTANTINE, ALGERIA^UNIV PAUL SABATIER, LAB GENIE ELECTRIQUE, 31062 TOULOUSE, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA;UNIV MONTPELLIER/FRANCE JN- THIN SOLID FILMS PD- 1994 DT- Periodique LA- English AB- Hexamethyldisiloxane (HMDSO) has been used as a precursor for the deposition of silicon dioxide films at low substrate temperature (25 - 400(o)C) by plasma enhanced chemical vapour deposition processing. Effects of the partial pressure of oxygen in the discharge on the deposition rate and the composition of the films are investigated. The deposition rate is found to decrease with increasing oxygen concentration in the HMDSO/O(2)mixture. The chemical composition of the formed films was characterized by X-ray photoelectron spectroscopy and infrared spectroscopy. Over 40% of the oxygen in the gas phase the carbon content of films deposited from HMDSO/O(2) mixtures is less than 5% SC- 001B80A15L CC- 001B80 C1- PHYSIQUE C2- DOMAINES INTERDISCIPLINAIRES: SCIENCE DES MATERIAUX; RHEOLOGIE FD- Depot plasma; Siloxane; Siloxane polymere; Procede depot; Methode en solution; Couche mince; Silicium oxyde; Vitesse depot; Effet pression; Composition chimique; Pression partielle; Oxygene; Etude experimentale; Spectrometrie photoelectron; Spectrometrie IR; 8115L PR- SCI-FONDA/PHYSIQUE; DB- RTURSAHLI1994THIN

AN- ---- TI- Different types of discontinuous precipitation in Cu - 15 Wt% in alloy AU- SAHEB N^BOUMERZOUG Z^HAMANA D^LAOUI T^VAN DER BIEST O^ A2- SAHEB N^BOUMERZOUG Z^HAMANA D^LAOUI T^VAN DER BIEST O^ CS- ^UNIV CONSTANTINE, RES UNIT MATERIALS PHYSIC APPLICATIONS, ALGERIA^ CATHOLIC UNIV LEUVEN, METALLURGICAL MATERIALS ENG DEP, BELGIUM^ CO- ALGERIA;BELGIUM RE- ALGERIA;EUROPE VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA;UNIV CATH LEUVEN/BELGIUM JN- SCRIPTA METALLURGICA ET MATERIALIA PD- 1995 DT- Periodique LA- English SC- 001B80A30M; 240 CC- 001B80 C1- PHYSIQUE C2- DOMAINES INTERDISCIPLINAIRES: SCIENCE DES MATERIAUX; RHEOLOGIE FD- Metal transition alliage; Precipitation; Transformation phase; Precipitation discontinue; Mecanisme reaction; Morphologie; Microstructure; Vieillissement; Solution solide; Etude experimentale; XRD; Alliage base cuivre; Indium alliage; Alliage binaire; Microscopie optique; TEM; Alliage Cu85In15; Cu In; 8130m PR- SCI-FONDA/PHYSIQUE; DB- DIFFERENTALLSAHEB1995SCRIPTA

AN- ---- TI- Algebraic treatment of a general noncentral potential AU- CHETOUANI L^GUECHI L^HAMMANN T^ A2- CHETOUANI L^GUECHI L^HAMMANN T^ CS- ^UNIV CONSTANTINE, INST PHYSIQUE, CONSTANTINE, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- CONSTANTINE AF- UNIV CONSTANTINE/ALGERIA JN- JOURNAL OF MATHEMATICAL PHYSICS PD- 1992 DT- Periodique LA- English AB- It is shown that the problem of a particle moving in a noncentral potential generalizing the Coulomb potential and the Hartmann ring- shaped potential accepts SO(2,1) x SO(2,1) as a dynamical group, within the framework of the Kustaanheimo-Stiefel transformation. The Green's function relative to this compound potential is calculated through the algebraic approach so (2,1) and with the help of the Baker-Campbell- Hausdorff formulas. The energy spectrum and the normalized wave functions of the bound states can then be deduced SC- 001B00C65B; 001B00C65D CC- 001B00; 001B00 C1- PHYSIQUE; PHYSIQUE C2- PHYSIQUE GENERALITES; PHYSIQUE GENERALITES FD- Mecanique quantique; Groupe dynamique; Potentiel Coulomb; Potentiel interaction; Methode algebrique; Groupe SO(2,1); Effet Aharonov Bohm; Etat lie; Spectre energie; Fonction Green; Fonction onde; 0365B; 0365D; Transformation Kustaanheimo Stiefel PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- ALGEBRAICIALCHETOUANI1992JOURNAL

AN- ---- TI- Path-integral solutions for a class of 2D systems with local degeneracies AU- BENTAIBA M^BENKADDOUR M^CHETOUANI L^HAMMANN T^ A2- BENTAIBA M^BENKADDOUR M^CHETOUANI L^HAMMANN T^ CS- ^UNIV BLIDA, LAB PHYSIQUE THEORIQUE, BLIDA, ALGERIA^UNIV HAUTE ALSACE, FAC SCI TECH, LAB MATHEMATIQUES PHYSIQUE MATHEMATIQUE INFORMATIQUE, 68093 MULHOUSE, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- BLIDA AF- UNIV BLIDA/ALGERIA;UNIV ALSACE/FRANCE JN- JOURNAL DE PHYSIQUE PD- 1994 DT- Periodique LA- English AB- The potential V(r)='Alpha' r(2d-2)- r(d-2) is studied via the path integral approach. The Green function is calculated for E=0 and for any value of d in polar coordinates as well as in coordinates generalizing the Levi-Civita transformation. It is shown that this Green function is the sum of a discrete but finite part and of a continuous part. Limiting cases will be investigated SC- 001B00C65B; 001B00C65D; 001B00C65G CC- 001B00; 001B00; 001B00 C1- PHYSIQUE; PHYSIQUE; PHYSIQUE C2- PHYSIQUE GENERALITES; PHYSIQUE GENERALITES; PHYSIQUE GENERALITES FD- Integrale parcours; Systeme 2 dimensions; Potentiel interaction; Fonction Green; Transformation mathematique; Fonction Bessel; Systeme quantique; 0365B; 0365D; 0365G; Solution equation PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- PATH-INTEGRALIESBENTAIBA1994JOURNAL

AN- ---- TI- Geometry and off-shell nilpotency for four-dimensional BF theories AU- TAHIRI M^ A2- TAHIRI M^ CS- ^UNIV ORAN ES-SENIA, LAB PHYSIQUE THEORIQUE, 31100 ORAN, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ORAN AF- UNIV ORAN/ALGERIA JN- PHYSICS LETTERS PD- 1994 DT- Periodique LA- English AB- We construct the off-shell nilpotent and metric independent BRST and anti-BRST operators for four-dimensional BF theories in terms of a superconnection formalism. The method is based on the natural introduction of auxiliary fields via a generalized supercurvature. We also discuss how to find the BRST and anti-BRST invariant gauge- fixed quantum action SC- 001B10A25H; 001B00D62; 001B10A15T CC- 001B10; 001B00; 001B10 C1- PHYSIQUE; PHYSIQUE; PHYSIQUE C2- PHYSIQUE DES PARTICULES ELEMENTAIRES ET CHAMPS; PHYSIQUE GENERALITES; PHYSIQUE DES PARTICULES ELEMENTAIRES ET CHAMPS FD- Geometrie; Algebre operateur; Invariance jauge; Theorie quantique champ; 1125H; 0462; 1115T; Operateur BRST; Action quantique PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- GEOMETRYORITAHIRI1994PHYSICS

AN- ---- TI- Positron annihilation lifetime (PAL) estimation of backscatter coefficients : ingredients for data correction AU- SAOUCHA A^BILLARD I^ A2- SAOUCHA A^BILLARD I^ CS- ^CENT DEVELOPPEMENT TECH NUCLEAIRES, ALGER-GARE, ALGERIA^CENT RECH NUCLEAIRES, LAB CHIMIE NUCLEAIRE, 67037 STRASBOURG, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ALGER AF- CDTN/ALGERIA;UNIV STRASBOURG/FRANCE JN- JOURNAL DE PHYSIQUE PD- 1993 DT- Periodique LA- English AB- Backscatter coefficients for a small variety of metals have been measured by PAL technique. "Source-surface" percentage contributions are presented for various specimens SC- 001B20I25B; 001B20I25N; 001B70H90 CC- 001B20; 001B20; 001B70 C1- PHYSIQUE; PHYSIQUE; PHYSIQUE C2- PHYSIQUE NUCLEAIRE; PHYSIQUE NUCLEAIRE; ETAT CONDENSE: STRUCTURE ELECTRONIQUE, PROPRIETES ELECTRIQUES, MAGNETIQUES ET OPTIQUES FD- 2925B; 2925N; 7890; Etude theorique; Retrodiffusion; Metal; Positon; Annihilation; Duree vie moyenne; Source positon; Desintegration beta plus PR- NUCLEAIRE/PHYSIQUE NUCLEAIRE;NUCLEAIRE/PHYSIQUE NUCLEAIRE;SCI-FONDA/PHYSIQUE; DB- POSITRONTIOSAOUCHA1993JOURNAL

AN- ---- TI- The semiempirical challenge for the calculation of molecular hyperpolarizabilities AU- HAMMOUTENE D^BOUCEKKINE G^BOUCEKKINE A^BERTHIER G^SMEYERS Y^LUDENA E^ORVILLE THOMAS W^ A2- HAMMOUTENE D^BOUCEKKINE G^BOUCEKKINE A^BERTHIER G^SMEYERS Y^LUDENA E^ORVILLE THOMAS W^ CS- ^USTHB, LAB CHIMIE THEORIQUE, 16111 BABEZZOUAR, ALGERIA^CSIC, INST ESTRUCTURA MATERIA, UNIDAD ESTRUCTURAL QUIMICA TEORICA, 28006 MADRID, SPAIN^ CO- ALGERIA;SPAIN RE- ALGERIA;EUROPE VI- ALGER AF- USTHB/ALGERIA;CSIC/SPAIN JN- JOURNAL OF MOLECULAR STRUCTURE THEOCHEM PD- 1993 DT- Periodique LA- English AB- The electric properties and more particularly the hyperpolarizabilities of several series of molecules, including benzene and pyridine derivatives and polymers, have been investigated. It was found that the values calculated at the MNDO level vary in a way parallel to the SCF ab initio results and are close to the latter when extended basis sets including diffuse orbitals are used. This semiempirical technique seems to constitute a useful and inexpensive tool for estimating the hyperpolarizabilities of large molecules SC- 001B30A20N CC- 001B30 C1- PHYSIQUE C2- PHYSIQUE ATOMIQUE ET MOLECULAIRE FD- 3120N; Etude theorique; Calcul MNDO; Calcul SCF; Fonction diffuse; Polarisabilite electrique; Hyperpolarisabilite electrique; Compose organique; Pyridine; Benzene; Nitrone; Oligomere; Aniline(nitro); Pyridine-1-oxyde(nitro) PR- SCI-FONDA/PHYSIQUE; DB- THEIESHAMMOUTENE1993JOURNAL

AN- ---- TI- Correlation entre vibrations symetriques et asymetriques du groupe SO(2). (Correlation between symmetric and asymmetric vibrations of - SO(2) group) AU- RAHAL S^HACHAICHI SADOUK Z^ A2- RAHAL S^HACHAICHI SADOUK Z^ CS- ^INST CHIMIE, LAB SYNTHESE ORGANIQUE, BAB-EZZOUAR, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- JOURNAL DE LA SOCIETE ALGERIENNE DE CHIMIE PD- 1993 DT- Periodique LA- French SC- 001B30C10G CC- 001B30 C1- PHYSIQUE C2- PHYSIQUE ATOMIQUE ET MOLECULAIRE FD- Alcanesulfonique acide chlorure; Benzenesulfonique acide chlorure; 3310G; Etude theorique; Spectrometrie IR; Mode oscillation; Symetrie; Traitement donnee; Methode moindre carre; Fonction correlation; Compose organique; Sulfone; Chlorure acyle PR- SCI-FONDA/PHYSIQUE; DB- CORRELATIONGRORAHAL1993JOURNAL

AN- ---- TI- Choix des bases d'orbitales atomiques pour le calcul quantique ab initio des deplacements chimiques de RMN AU- NAIT ACHOUR M^BOUCEKKINE A^ A2- NAIT ACHOUR M^BOUCEKKINE A^ CS- ^USTHB, INST CHIMIE, LAB CHIMIE THEORIQUE, 16110 BAB-EZZOUAR ALGER, ALGERIA^ CO- ALGERIA RE- ALGERIA VI- ALGER AF- USTHB/ALGERIA JN- JOURNAL DE LA SOCIETE ALGERIENNE DE CHIMIE PD- 1993 DT- Periodique LA- French SC- 001B30C25D; 001B30A70D CC- 001B30; 001B30 C1- PHYSIQUE; PHYSIQUE C2- PHYSIQUE ATOMIQUE ET MOLECULAIRE; PHYSIQUE ATOMIQUE ET MOLECULAIRE FD- 3325D; 3170D; Etude theorique; Calcul ab initio; Dimension base; Orbitale; Deplacement chimique; Resonance magnetique nucleaire; Constante ecran magnetique; Energie; Force intermoleculaire; Liaison hydrogene; Compose mineral; Dimere; Fluorhydrique acide PR- SCI-FONDA/PHYSIQUE;SCI-FONDA/PHYSIQUE; DB- CHOIXRMNNAIT1993JOURNAL

AN- ---- TI- Electron capture study of Ar(7+) + He(H(2)) by U.V. spectroscopy AU- BOUCHAMA T^EL MOTASSADEQ A^SALMOUN A^DRUETTA M^CHURCH D^ A2- BOUCHAMA T^EL MOTASSADEQ A^SALMOUN A^DRUETTA M^CHURCH D^ CS- ^UNIV SCI TECHNOLOGIE, INST PHYSIQUE, ALGER, ALGERIA^CNRS UNIV JEAN MONNET, LAB TRAITEMENT SIGNAL INSTRUMENTATION, 42023 SAINT-ETIENNE, FRANCE^ CO- ALGERIA;FRANCE RE- ALGERIA;FRANCE VI- ALGER AF- USTHB/ALGERIA;CNRS/FRANCE JN- PHYSICA SCRIPTA PD- 1993 DT- Periodique LA- English AB- Partial nl and total cross-sections for the low energy collisions Ar(7+) +He(H(2)) at 35-70 keV have been measured by photon spectroscopy. In addition to single electron capture, one electron capture with excitation of a core electron has been observed and measured. Comparisons with calculations based on the Extended Classical Over-Barrier (ECB) model and the assumption of conservation of angular momentum show good agreement between the experimental and predicted l- distributions SC- 001B30D70 CC- 001B30 C1- PHYSIQUE C2- PHYSIQUE ATOMIQUE ET MOLECULAIRE FD- 3470; Etude experimentale; Capture electron; Collision ion ato