1134 · 1134 ןיבל לארשי תנידמ תלשממ ןיב םכסה ןיס לש תיממעה הקילבופרה תלשממ תעינמו לפכ יסמ תעינמ רבדב
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Transcript of metal - snvhome.netsnvhome.net/ee-braude/malam/lectures/Lecture_10_spring_2014.pdf · after...
-
1
-
MOS metal oxide semiconductor. MOS (MOS (MOS Cap
(MOSFET). , .
MOS
Courtesy to http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf
2
"
nMOSFET
"
MOSFET MOS +2 pn
http://www.clker.com/clipart-13197.htmlhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf
-
: MOS "
, . .MOS
MOSFET . MOS Cap
1 - 2
10 20 ( , .(
3
nMOSFET
"
,70 - - gate " Al. 70 - , (polysilicone (poly-Si
- .
" MOS .2 () 2008 .
.2 gate -
-
4
MOS
equipotential AC - DC.
0 , () .
" (uniformly doped) () - interface
.2 -
, " - bulk , ,)
.( punch-through . MOS 1) - D) ,- x
.
-
MOS
5
. 1
.
)
skin) (
layer) 1 - ( .(
(10223 -)
.
t
Gate
()
x
x
()
x
()
-
MOS
6
. 1
t
Gate
()
x
x
()
x
()
'1
0
QxEair
'
''
0 C
Qt
QV
air
g
:
o 2
o ( - gate(
o = 1
o 0 = 8.85 1014
o
tC air 0'
) ) :
, 2
:
-
MOS
7
MOS . 2 "
1016) 10173).
, -
skin layer , MOS ."
- -
200 300 . " .
"
,
Gate
()
x
x
()
x
()
"
-
MOS
8
MOS . 2
'1
0
QxEOX
'
''
0 C
Qt
QV OX
OX
g
:
o 2
o ( - gate(
o = 3.9
o 0 = 8.85 1014
o ( (
OX
OX
tC 0'
) ) :
, MOS 2
:
Gate
()
x
x
()
x
()
"
-
9
MOS
, = 0 .
. -
-
.(work function , ) ,Mg : 3.66 )
4.1 Al, 5.15 Ni .(
. 1
0
0 )vacuum level( .
.
-
10
MOS
. .
:
2 = 8 . .
. 2
2 - electron affinity of 2
. vacuum level( 0( 2 - = 1 .
0 2
2
-
11
MOS
:
= 1.1 .
. p " . 3
electron affinity of = 0
)vacuum level( "0
4 :" ( . " ). GaAs Si, 4.07 Ge, 4.03
" . "
0
" = 0 = + . . -
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12
( - ") Schottky
MS) 0) "
"
- "
"-
0
"
0 :
.
-
13
( - ") Schottky
.' " " :
"
SMMS
" , ,0 .
.( ) "
2 , , ) " < ) "
.
-
14
MOS
after http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf
) " Schottky) 3 ." , , :
(zero bias) .pn Schottky ,
zero bias - MOS
+
"
http://www.clker.com/clipart-13197.htmlhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf
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15
MOS
Flat band - . "- Flat band ,
:
Flat band voltage ( )
+
"
qqV MSSMFB
o " o
:
eVSiM 05.4
V
q
EEV FCMMFB 7.0
after http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf
http://www.clker.com/clipart-13197.htmlhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf
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16
MOS
afte
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nm
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-Hu
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df
gate -
.gate -
)
pn .(
+
Accumulation < ()
+
"
o - gate
o
2 - . 2 .
o 2 - bulk.
http://www.clker.com/clipart-13197.htmlhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdfhttp://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch5.pdf
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17
MOS
2 , ,
.
Accumulation < ()
+
"
- ~100 200
2 ,
.(bulk -)
:( ) bulk -
kT
q
Asurface
surface
eNp
o 2 - bulk.
afte
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MOS
:
Accumulation < ()
o o 3.9~ "( (
o
2
OXsurfaceFBg VVV
.
FBgOX VVV
, Gauss :
o
o
2 (
)
OX
OXOX
OX
accOXOXOX
OX
accOX
tC
C
QtEV
QE 0
0
''
''
+
"
+
"
afte
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MOS Depletion > > ()
) gate - ( -
-
gate.
) pn .(
2 - . 2 .
.W
+
"
o - ) (
afte
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MOS Depletion > > ()
2 , ,
.
+
"
.
.
afte
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MOS Depletion > > ()
+
"
:
0
2
2
Si
Asurface
WqN
o
2
o
2
o
OX
surfaceASi
OX
A
OX
dep
OX
C
qN
C
WqN
C
QV
'
2
''
'
0
,pn ,
A
surfaceSi
qNW
02
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22
MOS Depletion > > ()
+
"
o
2
o o
OX
SiO
OXt
C02'
, - .
:
OX
A
Si
AFB
OXsurfaceFBg
C
WqNWqNV
VVV
'2 0
2
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MOS Depletion > > ()
+
"
" ) . MOS 2 ,
, = () )
: bulksurface
o ) ( - bulk
, - bulk -
i
AFbulkSiibulk
n
NkTEEq ln
afte
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MOS Threshold of inversion = ( )
+
"
."
2 - , - bulk Si . , , " (n - p - )
afte
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MOS Threshold of inversion = ( )
+
"
o - "
-
.
FbulkSiiSiOSisurfaceiF EEEE 2
Asurface Nn
afte
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26
MOS Threshold of inversion = ( )
+
"
, " 2:
i
Abulksurface
n
N
q
kTln22
:
OX
bulkASi
bulkFB
OXsurfaceFBT
C
qNV
VVV
'
222 0
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27
MOS Threshold of inversion = ( )
+
"
, :
A
bulkSi
qNW
22 0max
afte
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28
MOS Strong inversion < ( )
, 2 :gate -
+
"
< , "
2 inversion) layer), "
n ) (
)
2)
)
2 )
afte
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29
MOS Strong inversion < ( )
+
"
o
2
o
2
o
2
:
OX
invdep
bulkFB
OXsurfaceFBg
C
QQV
VVV
'
''2
OX
invT
OX
inv
OX
bulkASi
bulkFBC
QV
C
Q
C
qNV
'
'
'
'
'
222 0
TgOXinv VVCQ ''
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-
30
MOS
. : ) ,
. .(
+
"
:
2 )
,
,( .
MOS
.( )
afte
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Strong inversion < ( )
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31
MOS
" :
WOXt
AAD qNNNnpqx Wx 0
Poisson:
00
Si
A
Si
qNx
x
xE
Wx 0
Poisson:
xWqN
xESi
A
0
Wx 0
. 1 "
-
32
MOS
() :
WOXt
0x 0 xtOX
Poisson:
constxE
x
x
xE
Si
00
. 2
0 xtOX
-
33
MOS
WOXt
-dielectric displacement
2:
OX
A
xOX
Si
xtSi
A
x
WqNxExEW
qNxE
OX
00000
. 2
0
00
0
x
Six
OX xExE
" - = 0
00
xx
xDxD
-
34
MOS
WOXt
)
(1 -
. 3
0 OXtx
xE
-
35
MOS -1' MOS = 0.1
( = 10153) ( = 300).
Si = , 11.8 = 1.5 10
103.
:
=
2 ( = (0 =
:
Vn
N
q
kT
i
Abulk 298.0
105.1
10ln026.0ln
10
15
-
36
MOS -1'
=
2 ( = (0 =
()
mcmC
VcmF
qNW
bulksurfaceA
surfaceSi
624.010106.1
298.01085.88.112
2
31519
14
0
cm
V
cmF
cmcmC
WqN
xESi
A
x
3
14
531519
00
1056.91085.88.11
1024.610106.1
-
37
MOS -2'
:
MOS ,p = 10
163 . Si = , 11.8 = 1.5 10
103.
mcmC
VcmF
qNW
A
bulkSi
3.010106.1
347.01085.88.112
22
31619
14
0max
Vn
N
q
kT
i
Abulk 347.0
105.1
10ln026.0ln
10
16
= 2
-
38
MOS Accumulation < ()
p-type Si
OXt
OXC'
-
39
MOS Accumulation < ()
p-type Si
:
2
0''cm
F
tCC
OX
OXOXtot
o MOS
2
o
2
o = 3.9
o 0 = 8.85 1014
o ( (
OXC '
-
40
MOS Depletion > > ()
p-type Si
WOXt
OXC' WC '
-
200
111
'
1
'
1
'
1
cmF
Wt
CCC Si
OX
OXWOXtot
41
MOS Depletion > > ()
p-type Si
:"
o MOS
2
o
2
o
2
OXC' WC '
o o o = 3.9o = 11.8
o 0 = 8.85 1014
-
42
MOS Strong inversion < ( )
p-type Si
maxW
maxWOXt
OXC' max'WC
-
43
MOS Strong inversion < ( )
:" ()
2
max
00
111
'
1
'
1
'
1
max cmF
Wt
CCCSi
OX
OXWOXtot
o MOS
2
o
2
o
2
OXC ' max'WC
o o o = 3.9o = 11.8
o 0 = 8.85 1014
, ( )
p-type Si
maxW
-
35
45
55
65
75
-4 -2 0 2 4
f = 1MHz
f = 150 Hz
44
MOS C
apaci
tan
ce [
pF
]
nMOS ) .( -
Gate voltage (DC) Vg [V]
Capacitance of nMOS vs applied gate voltage Vg at the
low (f = 150 Hz) and high (f =1MHz) frequencies
high frequency
low frequency
-
45
MOS ?
MOS " " DC - gate , AC ) AC .
300 400 Hz) 1~) MHz).
, . 2 - , gate. MOS
:
2
0max ''
cm
F
tCC
OX
OXOX
nMOS
after R. Pierret. Semiconductor device fundamentals
high frequency
low frequency
Vg [V]
-
46
MOS ?
,
, 2.
:
2
max
00
max
00
min
max
max
''
'''
cm
F
Wt
Wt
CC
CCC
Si
OX
OX
Si
OX
OX
WOX
WOX
nMOS
after R. Pierret. Semiconductor device fundamentals
high frequency
low frequency
Vg [V]
-
47
MOS R
elati
ve c
ap
aci
tan
ce
[dim
ensi
on
less
]
depletion
accumulation inversion
OXtot CC '' OXtot CC ''
max
max
''
'''
WOX
WOX
totCC
CCC
high frequency
low frequency
Capacitance of nMOS vs applied gate voltage Vg at the
low (f = 150 Hz) and high (f =1MHz) frequencies
afte
r R
. Pie
rret
. Sem
icon
duc
tor
dev
ice
fun
dam
enta
ls
Voltage Vg [V]
-
48
MOS R
elati
ve c
ap
aci
tan
ce
[dim
ensi
on
less
]
Capacitance of nMOS vs applied gate voltage Vg at the
low (f = 150 Hz) and high (f =1MHz) frequencies
afte
r R
. Pie
rret
. Sem
icon
duc
tor
dev
ice
fun
dam
enta
ls
high frequency
low frequency
Gate voltage (DC) Vg [V]
-
49
MOS R
elati
ve c
ap
aci
tan
ce
[dim
ensi
on
less
]
Capacitance of nMOS vs applied gate voltage Vg at the
low (f = 150 Hz) and high (f =1MHz) frequencies
depletion
strong accu-
mulation
strong
inversion
Voltage Vg [V]
wea
k a
ccu
mu
lati
on
wea
k i
nve
rsio
n
afte
r R
. Pie
rret
. Sem
icon
duc
tor
dev
ice
fun
dam
enta
ls
-
50
MOS
) - nMOS )
.
.
2
max
00
max
00
min
max
max
''
'''
cm
F
Wt
Wt
CC
CCC
Si
OX
OX
Si
OX
OX
WOX
WOX
nMOS
Gate voltage (DC) Vg [V]
after R. Pierret. Semiconductor device fundamentals
-
51
MOS
.
2
max
00
max
00
min
max
max
''
'''
cm
F
Wt
Wt
CC
CCC
Si
OX
OX
Si
OX
OX
WOX
WOX
nMOS
after R. Pierret. Semiconductor device fundamentals
Gate voltage (DC) Vg [V]