MEMS & NEMS activities at CEA Leti · Grenoble Day Nagoya March 11th 2010 2 © CEA 2009. All rights...

1Grenoble Day Nagoya March 11th 2010

© CEA 2009. All rights reservedAny reproduction in whole or in part on any medium or use of the information contained herein

is prohibited without the prior written consent of CEA

MEMS & NEMS activities

at CEA Leti

JeanJeanJeanJean----Philippe POLIZZIPhilippe POLIZZIPhilippe POLIZZIPhilippe POLIZZI

Microsystems Program ManagerMicrosystems Program ManagerMicrosystems Program ManagerMicrosystems Program Manager

[email protected]@[email protected]@cea.fr




What are MEMS and NEMS ?

•MEMS is the acronym ofM icro Electro-MechanicalSystems

•MEMS are mechanical systems with components in the micrometer scale

•MEMS are micron sized devices that perform mechanical, optical, chemical or fluidic functions . They are generally realized by the technology used to manufacture integrated circuits, that is thin film deposition, photo-lithography and etching.




What are they used for?

Source: iSuppli 2009




Fast growing MEMS markets

Consumer electronics

3D accceleromer

3D gyrometer

Magnetometer

Components

Automotive ESP

Roll-over

TPMS

GPS

Electric / Hybride

Components

Accéléromèters

Gyromèters

Pressure sensors

Current sensors

mobile phone

game

bio-chemical analysis

Bio diagnostics

Industrial process control

Environnemental control

Food control

Lab on chip

Chemical sensors

Components




25 years background at Leti

80 85 90 95 00 05

year

10

Key dates

silicon bulk technology

Surface micro-machining techn.

« Intra-CMOS »demonstration

Waferscalepackaging

Wireless sensor

Thin film packaging

Above IC MEMS demonstration

MEMS quartz development

Caltech Alliance

Industrial transfers

Automobile sensor

Quartz accelerometer

Weight sensor

Hygrometer

Bulk pressure sensor

Pacemaker accelerometer

Petroleum application Geophone

Automobile acceleroSurfa

ce m

icro

-mach

ining

tech

nology

silico

n bulk

tech

nology

Abov

e IC

MEMS

NEMS

tech

nology




MEMS Activity : organization

LCMS Lab.Microsystemcomponents (30 people)

TECHNOLOGICAL PLATFORM

• MEMS 8”(1000m²) and FE 8”(3000m²) Cleanrooms

– Specific MEMS equip. : DRIE, HF-Vapor, bonder, …

– IC equip. for MEMS : e-beam, DUV, CMP …

• 5 shifts working : ~7days/week – 24h/days

LCRF Lab.RF Microsystemcomponents (30 people)

LTPI Lab.MEMS packaging (30 people)

LCFM Lab.Characterization and reliability (20 people)

Overall the MEMS design/fabrication/characterization employs about 250 persons in Leti (not including activities in the electronic design department)




BAW Devices Piezoelectric (AlN) & Acoustic

Switch Devices

CRF Filter 2007BAW FilterAlN AVIZA Trimming EPION BTC

200 mm

LCRF: Main activitiesLCRF Lab.

RF Microsystem(30 people)

ElectrostaticActuation

PiezoelectricActuation

MagneticActuation

Thermal Actuation

200 mm




100Ω - 100Ω differential filter for WCDMA Rx

Resonator Quality factor

= 1800

200mm Si wafer

Bragg

Piezo stack

PackagingTrimming

Trimming process to adjust central frequencies of filters across the wafer

superposition of filter measurements on 36 different

cells covering 80% of wafer area

Before trimming After trimming

LCRF: SMR BAW filtersLCRF Lab.





Electrostatic actuation (25V) Ohmic contact in Au (soon in

Ru) Silicon nitride fixed-fixed

membrane with patterned metallic contacts

Wafer level packaging Dimensions : 800x800µm² 11 mask levels + 5 mask levels

for packaging

Isolation > 20 dB up to 20 GHz Insertion loss < 0.6 dB up to 20

GHz Switching speed < 2 µs RF power : 2 W (cold switching)

Ohmic series switch Capacitive shunt switch Magnetic switch

Electrostatic actuation (35V) Capacitive contact in SiN or

SiO2 Aluminum bridge Wafer level packaging Dimensions : 800x800µm² 6 mask levels + 4 mask levels

for packaging

Isolation max > 20dB from20GHz to 32GHz

Insertion loss < 0.4dB up to 20GHz

Switching speed < 10 µs RF power : > 6 W (cold

switching)

Magnetic holding Reed relay : actuation has to be

integrated Ohmic contact in Ru Hermetic packaging

(pick&place) Dimensions : 1.6x1.6mm² 5 mask levels + 4 mask levels

for packaging

Not designed for RF Ron (initial) < 2 Ω Switching speed < 50 µs Reliability : 109 cycles

Industrial maturity

LCRF: Switches activityLCRF Lab.





LCMS Lab.Microsystem components (30 people)

105 / year

104 / year

106 / year

Accelerometers

ELA Medical (pacemaker)

Sercel (Geophone)

Freescale (automotive)

Gyrometer

Thales (avionic)

Force sensors

Bathroom scales sensor (consumer)

3D force sensors

LCMS: Main activities

106 / year




Pressure sensors

Presens (petroleum)

Sagem (automotive)

France Telecom (fingerprint sensor)

Absys (medical)

Thales (altitude sensor for avionic)

Schlumberger (hydrophone )

Thales/PSA/EADS (high temp. sensor)

103 / year

LCMS: Main activitiesLCMS Lab.

Microsystem components (30 people)




104 / year

LCMS: Main activities

•Capacitive Hygrometer (Coreci)

•Micro-bolometer (ESA)

•Acoustic sensor

•Adaptative optics

•Micro-scanner

LCMS Lab.Microsystem components (30 people)




Automotive accelerometer– Range : 2g

– Noise : 200 µg/√Hz

– Acc. output error : ±32mg

– Technology : SOI 25µm / 200mm (performances)

SiN pillars (techn. reproducibility)

– Thin film packaging (chip size optim. / plastic molding compatibility)

SOI fixed parts

SOI moving parts Si3N4 supporting pillars

Polysilicon thin film packaging

25µm

Polysilicon interconnection




MEMS Packaging

MECHANICAL PROTECTION

• particles

• humidity

• vibration

• mechanical shock

• thermal stress

• EM waves…

ELECTRICAL IN ELECTRICAL OUT

PHYSICAL / CHEMICAL IN (Sensor)

• light

• gas

• pressure

• acceleration

• electromagnetic field…

PHYSICAL OUT (Actuator)

VACUUM GAS FLUIDMOVING PARTS

Require specific & complex packages => Important overcos tObjective: To manage specificity at the wafer level (col lective process )




LowLow costcost WLPWLP

50 µm

Polymer solution for prototyping

and low cost applications

RF Switch

Wafer Level Packaging solutions at LetiLTPI Lab.

MEMS packaging (30 people)




TSV capTSV cap

An hermetic solution, compatible with highvacuum, and flip chip

Gyrometers

Accelerometers

Bolometers






Hermetic AuSn Sealing

Electrical lift: Via Last TSV

TSV Cap solution

MEMS Wafer

• Hermetic metallic sealing (AuSn Wafer to wafer bonding)• TSV (Through Silicon Vias) in the cap wafer• Direct available for flip-chip on heterogeneous RF module




ThinThin film capfilm cap

An ultracompact solution, compatible with IC fabs

MEMS intraCMOSRF switch Above IC 200 nm AlSilinewidth200 nm AlSilinewidth

NEMS






Thin film packaging solution

An ultra compact solution deeply linked to the device fabrication

Sacrificial layer + thin film cap

Holes sealing

MEMS device

BAW manufacturing

Application exemple

Cap manufacturing

& release Closing Bumping Overmolding




Active capActive cap

When cap becomes intelligent…

Energy

MEMS + IC

Optics functions






LCFM: Test and Reliability of MEMS components

Test

LCFM Lab.Characterization & Reliability

Reliability Test at wafer level with dedicated tool




LCFM: Test and Reliability activity

Vacuum packaging RGA test bench for getter efficiency evaluation

LCFM Lab.Characterization & Reliability

Mass spectrometer

First bench available at Leti(Resolution 10 -12 moles)New bench on going (target 10 -15 moles 10-3 mbar in a mems cavity)

Electrostatic actuator reliability Dielectric charging studies

0

100

200

300

400

500

0 500 000 1 000 000 1 500 000Number of cycles

Ron

[Ohm

]

Physics of contact




Future trends

•NEMS for physical sensing

•NEMS for chemical sensing




How do resonant NEMS work ?

NEMS resonator for ultra sensitive detection Frequency shift of the NEMS due added mass….

Massloading




Why using resonant NEMS ?

40

2−∝=−=ℜ l

M

f

m

f

effδδ

32010 lQ

Mm

DReff ∝=

−δ

Mass detection below ato gram (10-18 g) in ambient air

Detection of few molecules aggregates

~ a few zg (10-21g) to yg (10-24 g)

Sensitivity Resolution

δm




Technological platform

Development of generic and mastered process lines – 200 mm CMOS compatible / Microelectronic tools

DUV DESIGNS (248 /193 nm)Feature size bigger than 200 nm

EBEAM DESIGNSFeature size between 50 and 100 nm

Process line with metalDUV & EBEAM designs

1 or 2 critical lithography level

Full Si process lineonly EBEAM design

1 critical lithography level

200 mm wafer of NEMS VLSI

More than 3,5 million NEMS

SOI wafer – 160 nm Si top

400 nm BOX




Ultrahigh sensitivity of NEMS detectors

• Frequency shift response to CWA simulant DIMP is linear from ppm -> low ppb levels• Sub-ppb sensitivity is comparable to state-of-the-art commercial techs

RMS noise ~ 300 zeptogram DIMP sensitivity (1 zg = 10-21 g) 200 part-per-trillion concentration sensitivity

Caltech – 2007)




Single NEMS detection

0 2 4 6 8 10 12 14 16 18

−80

−60

−40

−20

0

3.0 ppm

7.5 ppm

15 ppm

30 ppm

75 ppm

150 ppm

1.5 ppm

750 ppb

300 ppb

150 ppb

Fre

quen

cy s

hift

(ppm

)

Time (s)

1 µm

τ = 100 ms

LOD = 150 ppb




Detection with a NEMS array

1 µm

Integration density ~ 60 000 NEMS/mm²Frequency spread < 1% in the array

2,800 NEMS/ array

Array size < 0.05 mm²

Using an array of NEMS allows to:•Reduce the detection time to 1 ms (100x faster)•Increase the detection level to 5 ppb (30x better): SNR ~√N




Analytical module

Detection Data treatment

Everything integrated in a single module, using micro & nano technologies

PC ( x 1000) with Si and CNTs

µGC (for increasing separation power)

NEMS arrays and integrated electronics (ASIC)

Software

On a chip

MGA ArchitecturePre-analytical module

SamplingConcentration

Filtering

µGC

- Selectivity- Sensitivity- Quantitative measurments

Separation




Conclusion

LETI has a strong position in the field of MEMS Experience

Workforce

Number of developments and technology bricks available Number of industrial transfers

New concepts and technologies are being developed to address future needs NEMS for physical sensing (P, acceleration, magnetometer)

NEMS for chemical sensing

NEMS present important potential in terms of

Applications Possibility to combine multiple sensors on a single chip

Level of detection




Thank you for your attention




Innovation

for industry

MEMS & NEMS activities at CEA Leti · Grenoble Day Nagoya March 11th 2010 2 © CEA 2009. All rights...

Documents

Transcript of MEMS & NEMS activities at CEA Leti · Grenoble Day Nagoya March 11th 2010 2 © CEA 2009. All rights...