Memristor -The fourth fundumental circuit element
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Transcript of Memristor -The fourth fundumental circuit element
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Seminar Presentation on MEMRISTOR
“The Fourth Basic Circuit Element”
By-Helal Uddin MullahMtech 2nd SemesterMTV/EC13/[email protected]
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Contents
What is Memristor?
History
Theory
Construction & Working
An analogy
Properties
Applications
Advantages
Conclusion
References
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WHAT IS MEMRISTOR?
• A memristor is a semiconductor whose resistance varies as a function of flux and
current. This allows it to “remember” what has passed through the circuit.
• It is the fourth fundamental circuit element.
• Two terminal device.
• Its resistance depends on the amount of
charge passed through it.
• That’s why it is called “memristor”(memory resistor).
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Memristor
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Memristance• Memristance is simply charge-dependent resistance.
• Unit - ohm (Ω)
• Symbol
V(t) = M(q(t))*I(t)
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Emergence Of Memristic Theory
• Theory was developed in 1971 by Professor Leon Chua at University of California, Berkeley.
• Found while exploring symmetry between the three fundamental passive linear circuit elements.
• In 2006, R.Stanley Williams developed practical model.
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Three Fundamental Circuit Elements
Resistor
v R i
Capacitor
q C v
Inductor
L i
ResistorGeorg Ohm 1827
Capacitorvon Kleist 1745
InductorMichael Faraday 1831
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Symmetry Of Relationships
Memristors
Φ=Mq
Voltage (V)
Current(i)
Charge (q) Flux (Φ)
Φ = Li Inductors
v=dΦ/dt i=dq/dt
Resistors
v=Ri
q=CvCapacitors
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Theory
Or
Or
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Working of TiO2 Based Memristor
Pt TiTiOv(2-x)
TiO2
3 nm
2 nm
dopeddepleted
(-)ve (+)ve
The HP device is composed of a thin (50 nm) titanium dioxide film between two
5 nm thick electrodes, one Ti, the other Pt. Initially, there are two layers to the
titanium dioxide film, one of which has a slight doped of oxygen atoms.
The oxygen vacancies act as charge carriers, meaning that the doped layer has a
much lower resistance than the non- depleted layer.
When an electric field is applied, the oxygen vacancies drift ,changing the boundary
between the high-resistance and low-resistance layers.
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Thus the resistance of the film as a whole is dependent on how much charge has
been passed through it in a particular direction, which is reversible by changing the
direction of current.
Memristance is displayed only when both the
doped and depleted layers contribute to resistance.
At a point of time, when enough charge will flow
in the film, no ion will be moving then the device enters
in to saturation and gives a constant value of M(q)
and remains fixed until we reverse the direction of
current flow.
In this TiO2 Memristor model, for RON<<ROFF
The memristance is
Where
μv = mobility of dopantD= thickness of the film.
Equivalent Circuit.
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• Retain its resistance level even after power had
been shut down.
• Remember (or recall) the last resistance it had,
before being shut off.
• By changing the speed and strength of the
current, it is possible to change the behavior of
the device.
• A fast and hard current causes it to act as a
digital device.
• A soft and slow current causes it to act as an
analog device.
Property Of Memristor
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Applications
As a switch
As a non volatile memory
Can perform logic operations
In artificial neural networks
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1 cm3 of memristor = 1 terabit
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Benefits Of Memristor Technology
• Would allow for a quicker boot up since information is not lost when the device is
turned off.
• Uses less power and produces less heat.
• Eliminates the need to write computer programs that replicate small parts of the
brain.
• Density allows for more information to be stored.
• Provides greater resiliency and reliability when power is interrupted in data centers.
• Creating a Analog Computer that works much faster than Digital ones.
• Conventional devices use only 0 and 1; Memristor can use anything between 0 and
1.
• Faster than Flash memory.
Allow digital cameras to take pictures with no delay in between.
• Compatible with current CMOS interfaces.
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Not Perfect Yet !• Though hundreds of thousands of memristor
semiconductors have already been built, there is still
much more to be perfected.
• Needs more defect engineering.
• No design standards (rules).
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Conclusion
In April 2010, HP labs announced that they had practical memristors working at
1 ns (~1 GHz) switching times and 3 nm by 3 nm sizes, which bodes well for
the future of the technology.At these densities it could easily rival the current
sub-25 nm flash memory technology.
So,it is sure that Memristor will change circuit design in the 21st century as radically
as the transistor changed it in the 20th.
As scientist are saying that Moore’s law is going to be saturated by 2022, we will now
have memristors as alternative to transistors.
Finally as Leon O Chua mentioned “It’s time to rewrite all the EE textbooks”
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References
• L. O. Chua, “Memristor-the missing circuit element,” IEEE Trans. Circuit Theory,
vol. 18,pp. 507 -519, Sep. 1971.
• D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing
memristor found.," Nature, vol. 453, no. 7191, pp. 80 -83, 2008.
• M. Di Ventra, Yu. V. Pershin, L. O. Chua, “Circuit elements with memory:
memristors, memcapacitors and meminductors”. 2009. arXiv:0901.3682.
• L. O. Chua, “Resistance switching memories are memristors," Appl. Phys. A, vol.
102,pp. 765-783, 2011.
• http://en.wikipedia.org/wiki/Memristor
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