Measurements of Photocathode Operational Lifetime at Beam Currents up to 10 mA
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Transcript of Measurements of Photocathode Operational Lifetime at Beam Currents up to 10 mA
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Measurements of Photocathode Operational Lifetimeat Beam Currents up to 10 mA
using an Improved DC High Voltage GaAs Photogun
J. Grames, M. Poelker, P. Adderley, J. Brittian, J. Clark,J. Hansknecht, M. Stutzman, K. Surles-Law
BNL C-A DepartmentFebruary 9, 2007
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Goal: Deliver high average current (> 1mA) and high polarization (> 80%) with long photocathode operational lifetime in support of new accelerator initiatives.
Enhance our understanding of photocathode decay mechanism. This will undoubtedly allow us to improve existing polarized guns operating at lower average current and unpolarized guns at milliAmp beam currents (e.g., Lightsources).
• Background• R&D Program • New DC HV Load Lock Gun• Low-P GaAs Studies• High-P GaAs Studies
Purpose & Overview
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• CEBAF’s first polarized e-beam experiment 1997
• Now polarized beam experiments comprise ~ 80% of our physics program, in fact, we only deliver polarized electrons
• All beam originates via photoemission from a Gallium Arsenside crystal inside a 100 kV photogun
• 35 weeks of beam delivery per year• 100 A at 85% polarization is fairly routine
• Three experimental areas may simultaneously receive:– high polarization (~85%) => large asymmetry/ figure of merit– continuous wave (499 MHz) => high statistics/ low couting rates– independent intensity (50 pA to 200 A) => target / acceptance– energy selection (multiples of linac energy) => flexibility
CEBAF Polarized e- Source
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Continuous Electron Beam Accelerator Facility
ABC
A B C
Pockels cell
100 keV DCElectron Gun
Two SRF 600 MeV linacs(1497 MHz)
67 MeV injector(1497 MHz)
RF deflectors
Double-sided septum
Wien filter
RF Lasers(499 MHz)
PSpin Precession
Degrees of Freedom
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Present JLab “Vent/Bake” Polarized Electron Gun
Cathode(GaAs)
NF3
Laser
CeramicInsulator
Cs
Non evaporable getter pumps (NEG)4,000 liter/s pump speed 5E-12 Torr
Anode
e-
NEG coatedbeampipe
-100 kV
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P ~ 35 - 40% P ~ 70 – 75 % P ~ 80 - 90 %
GaAs Photocathodes
Bulk GaAs
Strained GaAs
100
nm
100
nm
14 pairs
Bulk GaAs
GaAsP
Bulk GaAs
GaAsP
Unstrained GaAs Strained GaAs Superlattice GaAs
Degeneracy Broken degeneracy,but relaxation
No relaxation,quantum well structure
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Beam Polarization at CEBAF
P I 2
P I 2sup.
str.
= 1.38
Experiment Figure of
Merit
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Qweak to test standard model>200 A at 85% polarization
Proposed (>1 mA) facilitiesELIC, eRHIC
Future High Current/ High Polarization Projects
~20 C/day Ring <1 C/dayLinac >100 C/day
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Data compiled by M. Baylac
CEBAF Gun Charge Lifetime (2001-2004)
QE(q)=QE0∙e(-q/CL)
Charge Lifetime Steadily
Decreasing
NEG replacement Summer 2003
improves lifetime
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Photocathode “QE” Lifetime limited by ion back-bombardment.
One photocathode operates for year(s), and multiple activations, usually limited by field emission from the cesiated electrode.
CEBAF Polarized Source
Before heat/activation After heat/activation
laser beam
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Ion Back-Bombardment
residual gas
cathode
electron beam OUT
anode
Which ions more problematic?
laser light IN
QE trough toelectrostatic center
Ions accelerated & focused to electrostatic center
We don’t run beam from electrostatic center
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Cathode(-100 kV)
Anode(ground)
Strikes beampipe
Strikes gun chamber
Strikes Wien Faceplate(aperture)
• Limit photocathode active area• Eliminate stray light• Large diameter beampipes • NEG coated chambers to limit ESD• Proper electrode geometry• Proper lens configuration
e beam
Strikes anode
Experiment Requires Managing Electron Beam
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GaAs wafer…becomes a photocathode
Wafer from vendor
Stalk Mounted
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Paradigm Shift (Peggy Style => Load Lock Gun)
Wafer from vendor
Stalk Mounted Puck Mounted
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3 Chambers• Load/Hydrogen/Heat• Prepare NEA surface• High Voltage, Good Vacuum
Photocathode Lifetime Test Bed• Low-P bulk GaAs• High QE (15-20%) => mA’s • 200 C/day vs. 10 C/day
BTLLPEG Test Stand (2003-2006)
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Improvements limiting the active area
No more hydrogen cleaningStudy one sample without removal
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Ion Pump Locations
Improvements to monitor gun & beamline pressure
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Ion Pump Locations
Improvements to monitor gun & beamline pressure
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Photocathode Lifetime Studies & Operation (2003-2006)
We’ve learned about photocathode lifetime…• vs. gun & beamline pressure (leaks, pumping, gauging)• vs. laser (spot size, position, reflections, power levels)• vs. GaAs preparation (active area, cleaning)• vs. beam handling (optics, orbits, beam losses)We’ve learned about functionality of a Load Lock gun…• Round pucks + gravity = rolling• Manipulator alignment + bake-outs• Activation, heating, cooling• Sensitivity of manipulators to bake temperature• Multiple photocathodes > 1 photocathode
Work mainly presented at workshops & recorded in proceedings…
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NEW Load Lock PhotoGun for CEBAF
What’s next (really, now!)…
• Improve gun vacuum, photocathode lifetime
• Load multiple photocathodes with the “suitcase”
• Evolve the technology, i.e., design-out “features”
• Transfer the technology to the CEBAF program
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Top View
High VoltageChamber
Suitcase & Load Chamber• Mount wafer on puck in lab• Holds 4 pucks (e.g., bulk, SL, SSL)• Load Lock: 8 hour bake @ 250 C• No H-Cleaning
Beam
Activation Chamber• Manipulators 150 C bake• New & Used puck storage
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Docking Chamber & “Suitcase”
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High Voltage Chamber • “Side ceramic” design• load chamber at ground potential• No moving parts at HV
Side View
Activation Chamber • Mini-stalk heater• Mask selects active area• UHV IP supplies gauge activation• Keyed & eared pucks
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High Voltage Chamber • “Side ceramic” design• load chamber at ground potential• No moving parts at HV
Side View
Activation Chamber • Mini-stalk heater• Mask selects active area• UHV IP supplies gauge activation• Keyed & eared pucks
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Outgassing Rates vs. Bakes
0 E+00
1 E-12
2 E-12
3 E-12
4 E-12
5 E-12
6 E-12
0 2 4 6 8 10 12 14
Bake number
Ou
tgas
sin
g R
ate
304SS without (blue) and with (red) electroplishing and vacuum firing
NEG coating(Ti/Zr/V)100 hrs @ 70 C200 L/sec
Improvements to the High Voltage Chamber
304 SS: Electropolished & Vacuum Fired(AVS: 3 hrs @ 900 C @ 3x10-6 T)
• Careful electrode alignment• Lipped to flatten field profile• Bias anode or support• Rear windows view “tee”
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New Load Lock Gun Assembled & Running Spring ‘06
Suitcase
Small bake Load region
NEG-coated HV chamber
Heat/activation chamber
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(Best Solution – Improve Vacuum, but this is not easy)
Benchmarking Photogun with Operational Lifetime
Bigger laser spot, same # electrons, same # ions
electron beam OUT
residual gas
cathodeIonized residual gas strikes photocathode
anode
laser light IN
Ion damage distributedover larger area
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Load lock port(GaAs on puck)
NEG pipe
Laser(1 W @ 532 nm)
& attenuators
Faraday Cup(450 C bake)
High Voltage(-100 kV)
Activation(Cs/NF3,
Mask=5 mm)
Experimental Setup
350 m 1500 m
Spot SizeAdjustment
7 PrecisionIon PumpSupplies
SolenoidCentering
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• Run laser power (<1 Watt) PID to fix beam current• Record ion pump current at 7 beam line locations• Record laser power/setpoint via “pickoff” detector
Example Run (5 mA)
1/e Charge Lifetime = Charge Extractedln (QE /QE )i f
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Measurements Limited by HV Power Supply
13 mA!
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OLD
NEW
NEW vs. OLD Load Lock Design (small laser spot)
Damage ~ (a∙I + b∙I2)
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Gun Ion Production ~ Beam Intensity x Gun Pressure ~ (a∙I + b∙I2)
HV Chamber Pressure vs. Beam Intensity
Leakage Current
Pgun = P0 + 4 pA/mA
Sept
July
New UHV
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SMALL vs. LARGE Laser Spot (BP vs. LL)
Tough to measure >1000 C lifetimes with 100-200 C runs!
5
15
1500350
2≈ 18
Expectation:
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Side-by-Side Comparison of Original/Improved Guns
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We have no operational experience operating with superlattice at > 100 A. Surface charge limit. QE droops at higher laser power. Old wafers get tired,
must be replaced.
0
0.5
1
1.5
2
2.5
3
Sample
[laser/spot]
25 75 125 175 225
Charge Lifetime [C]
2nd Activation
3rd Activation
4th Activation
Superlattice Charge LifetimePhotocathode Aging
The “100 A” 85% Photocathode
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High Surface Charge Density Superlattice Photocathodes
(M. Yamamoto, Nagoya University)
Superlattice photocathode:
•Surface <100 nm is GaAs
•Similar doping, e.g., Zinc
•Concern: heat => diffuses dopant
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Superlattice Test June ‘05: 1 mA @ 532
Lifetime ~200 C at 1 mA (532 nm)
Brief opportunity to test superlattice photocathode with 532 nm DC laser in the original load lock gun
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Ingredients: Good gun, good photocathode, powerful laser
100
nm
Superlattice GaAs: Layers of GaAs on
GaAsP
No strain relaxationQE ~ 0.6%Pol ~ 85%@ 780 nm
chekc14 pairs
Fiber-based LaserNEW Load Lock Gun
Now: High Current & High Polarization
(Was: Ti:Sap)
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Superlattice in LL Gun
QE ~ 0.6% @ 780 nm (high-P) QE ~ 10% @ 532 nm (low-P)
Successful activation
We have, so far, only measured poor photocathode lifetime (10’s of C) at low average
current (100 A).
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We have just begun…
…to measure how our experience with bulk translates to superlattice:
Bulk (robust)
Band-deep light (532 nm)
DC (peak=ave, no SC)
Superlattice (fragile)
Band-gap light (780 nm)
RF (ps & MHz)
?
Cause & effect is not always obvious, so we will replace the sample, repeat the measurement,
verify the baseline and ... enhance our understanding of photocathode decay
mechanisms.
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=> NEW gun charge lifetime 2-3x better; likely vacuum, electrode improvements.
=> Larger laser spot improves charge lifetime, but not simple model prediction.
=> Exceptionally good Charge Lifetime >1000 C at high currents >1mA; in fact, difficult to measure when using large laser spot.
=> Photocathode lifetime measurements at higher (>1 mA) currents using GaAs/GaAsP superlattice, but so far poor lifetime.
=> Install load lock in tunnel in July 2007.
Conclusions