Measurement and Analysis facilities in Nanolab · – Light diffusion measurement: Candela CS10...

UNIVERSITEIT TWENTE.

Measurement and Analysis

facilities in Nanolab

“Inside and outside the cleanroom”

11/05/2015 Measurement & Analysis 1


Contents


Typical facilities

Available equipment by application

Resolution versus detection limit

Information depth, including depth profiles

Techniques used for analysis and characterization

Measurement and analysis techniques available in Nanolab

State of affairs for sample control

Visual inspection and optical microscopy

Thickness and optical properties

Roughness

Force Imaging

Homogenity

Electrical characterization

Wafer cleanliness

Scanning probe imaging

Contents mapping

Crystallinity

Thin layer contents

List of abbreviations

List of operators and supervisors

3

4

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6

7

10

11

14

15

18

19

20

21

22

23

28

29

31

35

36


Typical facilities

Inside the cleanroom a number of tools are present in order to inspect your

samples and decide whether your process was successful or not. Some of the

tools can also give an indication of the sample composition. The tools are used to

control dimensions of the samples produced .

• Length, width, depth/height, roughness, mass, homogeneity, hydrophobicity,

conductance and refractive index

In addition to the facilities in the cleanroom for inspection of your products we also

offer facilities for materials analysis and in particular surface analysis for members

of MESA+, other university members and people outside the university. We offer

equipment and expertise to prepare your samples for analysis. The equipment

can analyze bulk materials, but most techniques give information regarding to the

surface of materials, monolayers and thin films.

• Elemental content, crystal classes, crystal shape, directionality are a few of

the properties that can be measured. The sample dimensions can range from

a few nanometers to a few centimeters.



Available equipment in alphabetical order of application


Analysis of elemental contents

• Electron microscopes

• X-ray microscope

• X-ray diffractometers

Electrical Characterization

• 4 point probes

• EBIC

• Parameter Analyzer

Homogeneity

• Ellipsometers

• X-ray Photoelectron Spectrometer

Imaging

• Optical microscopes

• Electron microscopes

• Force microscope

Surface Energy Characterization

• Contact angle apparatus

Thickness

• Interferometer

• Ellipsometer

• Reflectometer

Topography

• Profilometer

• Force Microscope

Weight

• Balances


Analysis Resolution versus detection limit for several techniques



Surface analysis



Surface analysis techniques



Analysis Information depths given by the listed techniques, including

depth profiles



Techniques used for materials analysis and characterization.

AES EDS GDMS SIMS TXRF XRFICP OES IGA

LA ICP MS LEXES RBS Raman FTIR GC MS

TOF SIMS

XPS ESCA XRD FIB OM SEM

SPM AFM

STEM TEM Ellipsometry XRF

Adhesion and bonding

Cleanliness

Thin layer analysis - Composition

Surface Analysis - Composition

Bulk Analysis - Composition

Particles - Contamination

Residues - Contamination

Discolorations - Contamination

Haze - Contamination

Layer - Contamination

Bulk - Contamination

Corrosion

Diffusion

Implant Profiles - Dopants

ULE Profiles - Dopants

Layers - Dopants

Two-dimensional Profiles - Dopants

Failure Analysis

Imaging/Mapping

Morphology

Topography

Profiling

Surface Chemistry

Thin Film Analysis

Present in MESA+

Chemical bonding / molecular information

Elemental information

Image information

Thickness and density information

Acknowledgement: Evans Analytical Group


Topic of interestTechniques


Measurement and analysis techniques found in the Nanolab and the MESA+ institute


hν(IR)

hν(IR)

FTIR

1mm 10mm

0.0

1nm

5

00nm

hν(IR)

hν(x-ray)

hν(x-ray)

XRF

0.2μm 100mm

0.2

μm

1μ

m

CA

0.01°

0°

180°

Θ

droplet

hν(light)

hν(light)

Microscopy

0.2μm

0.2

μm

1m

m

hν(light)

Ellipsometry

1mm

0.0

1nm

5

00nm

Δ Ψ

EDX SEM

10nm-10μm

1nm

500nm hν

(x-ray)

e-

XPS

9μm

0.1

nm

5nm hν

(x-ray)

e-

photoelectron

Θ

hν(x-ray)

hν(x-ray)

XRD

0.2μm 100mm

0.2

μm

1m

m

SEM, EBSD, EBIC

1nm

1nm

500nm e-e-e-

A

AFM

2nm

1nm

100μ

m

hν(laser)

hν(ir-uv)

RAMAN

0.2μm

0.2

μm

1μ

m

Materials analysis

Imaging

Structural analysis

Information depth / height resolution

Spatial resolution

Nanolab / MESA+

EDX TEM

0.1nm 10nm

1nm

150nm hν

(x-ray)

e-

MP

25nm

0.5

nm

600μ

m

g

0μ

g

31g

Scales

3μg

?

4 point

1 mΩ/sq

10nm

1m

m I

V

FIB

15nm

10nm

1

0μ

m

e-e-

I+ X+

TEM

0.1nm

1nm

150nm

e-

e-

e-

stimulus

response


State of affairs.

After each process step one could do an inspection of the products.

First controls should be the controls that do not change the state of the products.

Visual inspection, dust particles visible under light reflection

Optical microscopy inspection

– White light

– Yellow light

Layer thickness inspection, refractive index

– Non destructive

• Ellipsometer

• Reflectometer

• Interferometer

• Weighing scales

– Destructive

• Ball groover

Roughness measurement

– Mechanical profiling

– Scanning probe imaging

Homogenity

– Contact angle

– Ellipsometry for refractive index



Further inspection and analysis

Electrical properties

– Square resistance

– I-V curves Imaging

– EBIC in Electron microscopy

Wafer cleanliness

– Light diffusion measurement: Candela CS10

Small scale imaging

– Scanning probe microscopy

• AFM

– Electron microscopy

• FIB

• SEM

• TEM

Contents analysis and mapping

– EDX for thick layer > 50 nm

– EELS for thin layers

– FTIR spectroscopy: transmissive or reflective

– XPS for thin layers < 5 nm



Further inspection and analysis

Crystallography

– XRD for bigger sample > 5µm

– EBSD > 10 nm



First control: Visual inspection and optical microscopy inspection

Visual inspection with help of a halogen cold light source can be done

in the SEM room. The light is also used as an illumination source

for the optical microscope in that room. The light in the SEM room

can be switched off for better dust/particle recognition

White light Optical microscopes from Olympus, Nikon, Leitz are

mostly used for visual inspection of whole wafers or smaller

samples to gain an impression of the product after a process step.

It can give a lot of information about the uniformity, the presence

of particle and process induced errors. Most metallurgical

microscopes are equipped with a camera to make digital images

and with software to measure

dimensions. Stereomicroscopes are used for quick inspection with

low a magnification on large samples.

Yellow light Fluorescence microscope, Nikon is used if structures are

made with fresh positive resist, not negative. The light will expose

the positive resist.

In the preparation room of the analysis group outside the cleanroom

there are a few microscopes to control the shape and roughness

of freshly prepared samples after polishing and to check samples

before carrying out electron microscopy.


http://en.wikipedia.org/wiki/Microscope

http://en.wikipedia.org/wiki/Fluorescence_microscope


First control: Layer thickness inspection, refractive index

Non destructive

• Ellipsometers: A Woollam M-2000 spectroscopic ellipsometer

measures the change of polarization (in terms of Y and D)

upon reflection of incident light with the sample surface. The

films are measured over a wide wavelength range (245-1690 nm)

and at multiple incidence angles, allowing the accurate

determination of the film thickness and corresponding optical

constants (refractive index, extinction coefficient) for a wide range

of transparent and semi-transparent materials. The ellipsometer is

sensitive to less than a monolayer of material (sub-nm) on a

surface and is still able to determine film thicknesses up to tens of

micrometers. The llipsometer has a computer-controlled sample

stage for the determination of

variations in the layer thickness and optical constants

(refractive index, extinction coefficient) as a function of the

position on the sample.


• Reflectometer: The thin film thickness mapping system, Filmetrics

F50 reflectometer, is based on measuring the reflectance of light

on a sample as function of wavelength, used to measure

homogeneous, partially absorbing, films with a thickness of more

than 50 nm. It is used to measure (semi) transparent films.

hν(light)

Ellipsometry

1mm

0.0

1nm

5

00nm

Δ Ψ

http://en.wikipedia.org/wiki/Ellipsometry



• Non destructive

– The Bruker Contour GT-I Interferometer is a white light

interferometer, can be used to measure the topography

of a surface down to less than 1 nm. Lateral resolution is of

the order of 0.5 um.

– Weighing scales. The Sartorius ME36S OCE, is an analytical

micro balance.

It is an instrument to weigh small masses with very high

precision. The instrument is so precise that one has to

compensate for temperature, humidity and air buoyancy

changes to use it at its ultimate resolution and

reproducibility. The scales have a closed cabinet to control

the temperature and the air turbulence inside. It takes

some time for the balance to reach equilibrium in order to

make a good measurement. As an example; on a 4” silicon

wafer one can measure the increase of an oxide layer with 1

nm by measuring the weight gain of the wafer. This gain

would be around 11 μg for the change of 0.35 nm silicon in 1

nm silicon oxide.


http://en.wikipedia.org/wiki/Balance_(device_for_weighing)



• Destructive

– Ball groover: A technique for determining the junction

depth of a P/N junction. Using a fast spinning ball a pit is

grinded into the test substrate and after staining the

substrate, using a microscope, the ring sizes can be

measured and these can be translated into junction depths.



First control: Roughness measurement

Mechanical profilometers, scan a surface in a straight line with a small

needle. The needle follows the indentations and bumps of a

surface. The height differences can be made visible as a function

of distance. From this, the roughness is calculated. The needle of

the machine actually makes contact with the surface being

measured so it can damage the sample.

The Dektak 8 surface profiler is an advanced thin and thick step

height measurement tool capable of measuring steps down to 10

nm. Substrates up to five inches in dimension can be measured.

The Dektak 8 is especially setup up for doing fine measurements,

for this purpose it has a 2.5 μm stylus.

The Dektak 150 surface profiler is an advanced thin and thick step

height measurement tool capable of measuring steps down to 10

nm. Substrates up to five inches in dimension can be measured.

The Dektak 150 is especially setup up for doing stress

measurements, for this purpose it has a 12 μm stylus.


http://en.wikipedia.org/wiki/Profilometer


First control: Roughness measurement


Atomic Force Microscope, Bruker ICON AFM: with a small probe

(tip, needle, pin, magnet) a sample can be imaged in quasi

contact or real contact mode. A monitored force is used to allow

the scanning tip follow the indentations or bumps of a sample.

Topography, magnetism, friction and other types of forces are

monitored with a computer. An image of the sample made for the

specific force is presented on a computer screen. As with a

profilometer, surface roughness can be calculated from the

measurements. The AFM is a setup for measurements in the

Scan Assist mode. The maximum step height is limited to 4 μm.

The depth resolution can be as small as 0.5 nm. The tip radius is

4 nm which is the maximum lateral resolution and the measuring

area has a maximum of 80 X 80 µm. Substrates with a

(maximum) diameter of 150 mm can be

measured.


AFM

2nm

1nm

100

μm

http://en.wikipedia.org/wiki/Atomic_force_microscopy


First control: Homogenity

Contact angle: The contact angle apparatus Dataphysics OCA 20

measures the hydrophobicity of a sample surface. The surface

tension of the fluid and/or the solid involved can be measured as

well as the surface homogeneity on a macroscopic scale. A tiny

drop

of a known fluid is put in contact with the sample surface under

controlled conditions like temperature and humidity. The angle

between the droplet and the surface is a measure for the surface

free energy.

Ellipsometry for refractive index homogenity: Woollam M-2000

mapping spectroscopic ellipsometer


http://en.wikipedia.org/wiki/Contact_angle

http://en.wikipedia.org/wiki/Ellipsometry


Further inspection and analysis: Electrical characterisation

• Square resistance:

– 4 point probe from Polytec. The four point probe is used

for automatic mapping of the sheet resistance of metals

and/or epitaxial layers and of doped silicon based

layers. A current is injected into a surface and extracted a

few millimeter further away. In between, the voltage over

a known distance is measured. From voltage and current,

the square resistance is calculated. Read out in Ω/sq. and

measuring range is from 1 mΩ/sq to 800 kΩ/sq. The

probe head is only suitable for metal layers up to 300 nm

and epitaxial layers

• I-V curves Imaging

– Parameter Analyser, HP

• EBIC in a scanning electron microscope, electron beam

induced current detector measures where the most electrons

are absorbed in a sample, i.e. where the conductivity is

highest


http://en.wikipedia.org/wiki/Contact_resistance

http://en.wikipedia.org/wiki/Network_analyzer_(electrical)


Further inspection and analysis: Wafer cleanliness

KLA Tencor Candela CS10r Optical beam surface analyser

– > 80 micron particles

– Nano crystal defects

– Nanometer size scratches



Further inspection: small scale imaging


Atomic Force Microscope, Bruker ICON AFM: with a small

probe (tip, needle, pin, magnet) a sample can be imaged in

quasi contact or real contact mode. A monitored force is used to

allow the scanning tip follow the indentations or bumps of a

sample. Topography, magnetism, friction and other types of

forces are monitored with a computer. An image of the sample

made for the specific force is presented on a computer screen.

As with a profilometer, surface roughness can be calculated from

the measurements. The AFM is a setup for measurements in the

Scan Assist mode. The maximum step height is limited to 4 μm.

The depth resolution can be as small as 0.5 nm. The tip radius is

4 nm which is the maximum lateral resolution and the measuring

area has a maximum of 80 X 80 µm. Substrates with a

(maximum) diameter of 150 mm can be

measured.


AFM

2nm

1nm

100μ

m

http://en.wikipedia.org/wiki/Atomic_force_microscopy


Further inspection: small scale imaging

Electron microscopy gives information on a much smaller scale than

the optical microscopes. There are 3 SEMs, 1 TEM and 1 FIB/SEM

directly accessible to customers of the Nanolab. There are a number

of groups that have their own electron microscopes.

Inside the cleanroom there are 2 SEMs available of which one can be

used for a first control of 4”wafers

JEOL JSM5610, with a tungsten tip source, for inspection of

large samples, up to 4” wafers. This is the first SEM one should

use. It is

easy to use and gives good results up to a magnification of

30000 x

FEI Sirion XL, a SEM, with a FEG (Field Emission Gun) source

and an in-lens detector, with higher resolution for inspection of

non-

magnetic small samples. It gives results up to a magnification of

150.000 x with a resolution of ~ 1.5 nm.

Because this SEM cannot hold 4”wafers, wafers have to be

parted to supply the smaller parts needed in this SEM.

These smaller samples can be brought closer to the SEM’s

objective lens and therefor be studied with lower energy

electrons. Charging can be less influential than in the JEOL SEM


http://en.wikipedia.org/wiki/Electron_microscope

http://en.wikipedia.org/wiki/Scanning_electron_microscope

http://en.wikipedia.org/wiki/Transmission_electron_microscope

http://en.wikipedia.org/wiki/Focused_ion_beam


Further inspection and analysis: Small scale imaging

• Outside the cleanroom there are a couple of microscopes for

imaging and analysis.

• FEI NOVA600 Dual Beam combines Focused Ion Beam with

Scanning Electron Microscopy.

• The combination of these two techniques makes it ideal for

micromachining. Local etching with the ion-beam creates

structures suitable for cross-sectioning and TEM-sample

preparation in a predefined part of the substrate without

damaging other parts. Cross-sectioning reveals the

underlying structure imaged by SEM. TEM-sample

preparation thins the sample down to 100 nm with minimal

damage. A 16 bit pattern generator is available to create the

most amazing structures such as 3D Photonic Crystals.

Tungsten and platinum deposition is also available.

• For analysis there is the option of local etching of multi-

crystalline materials. It reveals not only the size of the

crystals but also differences in crystal orientation.


FIB

15nm

10nm

1

0μ

m

e-e-

I+ X+



– Zeiss Merlin SEM, with FEG tip and a number of different

detectors. This machine can reach an ultra high resolution

and is used for materials characterization and analysis. It is

operated by a dedicated operator who can obtain the best

results from your samples.

This High Resolution SEM is the workhorse in the analysis

laboratory. A microscope with a lateral resolution of approx. 1

nm. It can be used at both high and low electron

beam currents and high and low beam voltages which

allowsnon-conducting samples have to be investigated.

Next to the obligatory SEM images, detectors can yield

extra information about the sample. EDX will give the

elemental composition of the material down to a certain

depth. EBSD will give information about the crystal structure

and the crystal orientations on flat-polished samples. A STEM

detector produces TEM-like images in the SEM. The

resolution of this technique is of the order of 0.6 nm


SEM, EBSD, EBIC

1nm

1nm

500nm e-e-e-

A



– FEI (Philips) CM300ST-FEG TEM, with the highest

spatial resolution available at the university. Information

regarding size, elemental composition and crystal

structure of a sufficiently thin, prepared electronic

transparent specimen can be obtained. An expert

operator prepares the samples if necessary and operates

the microscope for best results.


TEM

0.1nm

1nm

150nm

e-

e-

e-


Further inspection and analysis: Contents mapping

Analysis tools are used to determine the chemistry of a sample. In the

nanolab, most of these tools are specialized in measuring the

composition of thin films and surfaces. Tools for measuring bulk

properties are essentially limited to optical instruments that

measure the optical properties of (semi) transparent materials.

– EDX for thick layer > 50 nm, detectors on SEM and TEM. The

lateral resolution is as good as the thickness of the X-ray

generation volume.

– EELS for thin layers, detector on TEM

– FTIR spectroscopy: transmissive or reflective optical respons

– XPS for thin layers < 5 nm but a very big lateral resolution >

10 µm



Further inspection and analysis: Crystalinity and Contents

– XRD, X-Ray Diffractometers, from Panalytical is used to find

the atomic contents and possible crystal classes of small

crystals in a surface or in a powder.

Bruker

Philips XRD model Expert system II wafer characterization,

crystal plane distance measurements

XRD is used for relatively bigger samples > 5µm

– EBSD from HKL systems as an extra detector on the Zeiss

Merlin HRSEM. For the technique of Electron BackScatter

Diffraction one uses a SEM as a source of incident electrons

that are subsequently backscattered and diffracted by the

crystal lattice of small crystals that make up the surface The

information comes from a thin layer ~5 nm thick and gives

information about the crystal lattice parameters. Together

with EDX it can resolve the materials at a surface EBSD is

used for relative small and thin samples < 10 nm in height


http://en.wikipedia.org/wiki/X-ray_Diffraction

http://en.wikipedia.org/wiki/Electron_backscatter_diffraction


Further inspection and analysis: Crystallography

Transmission Electron Microscope. FEI (Philips) CM300ST for the

investigation of the internal structure of a material down to sub

nanometer dimensions. A number of detectors are mounted onto the

microscope to facilitate chemical analysis techniques. Chemical

information using EDX, EELS and EFTEM imagingdown to approx.

the nanometer scale.

Point resolution = 0.2 nm@300 kV, Line resolution = 0.14 nm

@300 kV.

Single atoms can not be observed with a TEM. But crystal planes and

distances between them can be resolved thereby giving

crystallographic information on a very small scale sample


http://en.wikipedia.org/wiki/Transmission_electron_microscopy


Further inspection and analysis: Homogenity and thin layer contents

• Scanning X-ray Photoelectron Spectrometer PHI Quantera XPS.

• Homogenity. In this machine we can map the photoelectron

electron escape probability from the surface of the sample.

The scanning x-ray electron images can show areas with less

or more brightness. The brightness is an indication of the

escape probability. Metallic samples show higher probabilities

and non conducting parts lower probabilities. Bright or dark

spots on homogenous wafers reveal inhomogeneities.

• Contents. XPS is also a technique to measure the contents of

very thin layers of materials. The lateral resolution of the

instrument is about 10 μm for structures with high contrast. It

is not comparable to SEM techniques. The strength of the

instrument is the energy resolution and sensitivity to very thin

layers. Monolayers can be readily detected. The detection of

sub monolayer coverage of elements is possible. High energy

resolution spectra can reveal chemical shifts in the binding

energies of electrons and can therefore give an indication of

the electronic state of the element measured. An argon

sputter gun can remove material from the surface thereby

facilitating the measurement of depth concentration profiles.


XPS

9μm

0.1

nm

5nm hν

(x-ray)

e-

photoelectron

http://en.wikipedia.org/wiki/X-ray_photoelectron_spectroscopy

http://en.wikipedia.org/wiki/X-ray_photoelectron_spectroscopy


Analysis facilities

Raman spectroscopy for the analysis of surface materials.

A Raman microscope setup consists of a standard

microscope, extended with an excitation laser, a

monochromator, and a sensitive detector (such as a charge-

coupled device (CCD), or photo-multiplier tube (PMT)). FT-

Raman has also been used with microscopes. Ultraviolet

microscopes and UV enhanced optics must be used when a

UV laser source is used for Raman micro spectroscopy.


hν(laser)

hν(ir-uv)

RAMAN

0.2μm

0.2

μm

1μ

m

http://en.wikipedia.org/wiki/Raman_microscope


Analysis: FIB and FTIR

• Focused Ion Beam. FEI’s Dual Beam System NOVA 600,

combines FIB with SEM. The combination of these two

techniques makes it ideal for micromachining. Local etching with

the ion-beam creates structures suitable for cross-sectioning

and TEM-sample preparation in a predefined part of the

substrate without damaging other parts. Cross-sectioning reveals

the underlying structure imaged by SEM. TEM-sample

preparation thins the sample down to 100 nm with minimal

damage. A 16 bit pattern generator is available to create the most

amazing structures such as 3D Photonic Crystals. Tungsten and

platinum deposition is also available.

• In an FTIR, fourier transformed infrared spectrometer , light is

reflected by or transmitted through a sample. The light interacts

with the atoms of the sample and shows shifts in the spectrum.

The shifts are characteristic for the molecules present in the

sample.


hν(IR)

hν(IR)

FTIR

1mm 10mm

0.0

1nm

5

00nm

hν(IR)

FIB

15nm

10nm

1

0μ

m

e-e-

I+ X+

http://en.wikipedia.org/wiki/Focused_ion_beam

http://en.wikipedia.org/wiki/FTIR


Analysis: SEM detectors: EBIC, EBSD, ESB, STEM, EDX.

TEM detector: EDX.

• EBIC, Zeiss Merlin detector. The electron beam induced current maps the

conductivity of a sample. It can be used to identify buried

junctions and defects in semiconductor devices

• EBSD, HKL systems on the Zeiss Merlin. Electron Backscatter

Diffraction as with EDX one can use a SEM as a source of

incident electrons that are subsequently backscattered and diffracted by the

crystal lattice of small crystals that make up the surface The information

comes from a thin layer ~5 nm thick and gives information about the crystal

lattice parameters. Together with EDX it can resolve the materials at a surface


SEM, EBSD, EBIC

1nm

1nm

500nm e-e-e-

A

http://en.wikipedia.org/wiki/Electron_beam-induced_current

http://en.wikipedia.org/wiki/Electron_backscatter_diffraction


List of abbreviations

AFM-SPM atomic force microscopy – scanning probe microscopy

CA contact angle measurement

EDX/EDS energy dispersive X-ray spectroscopy

EBIC electron beam induced current

EBSD electron backscatter diffraction

EELS electron energy loss spectroscoy

EFTEM energy filtered TEM, a derivative technique of EELS.

ESCA electron spectroscopy for chemical analysis

FIB focused ion beam

FTIR Fourier transformed infrared spectrometry

GCMS gas chromatography mass spectrometry

GDMS glow discharge mass spectroscopy

HIM helium ion microscopy

ICP-OES inductive coupled plasma optical emission spectrometer

ICP-MS inductive coupled plasma ion mass spectroscopy

LEXES low energy x-ray emission spectroscopy

MP mechanical profilometry

OM optical microscopy

OP optical profilometry

RBS Rutherford back scattering

SEM scanning electron microscopy

SIMS secondary ion mass spectroscopy

(S)TEM (scanning) transmission electron microscopy

TXRF total reflections x-ray fluorescence

TOF-SIMS time of flight secondary ion mass spectroscopy

XPS x-ray photoelectron spectroscopy

XRD x-ray diffraction

XRF x-ray fluorescence



List of operators and supervisors in cleanroom and nanolab

4 point measurement Cleanroom Eddy Ruiter 6765

4 point probe Cleanroom Robert Wijn 6770

AFM-SPM Cleanroom Robert Wijn 6770

Balance Cleanroom Eddy Ruiter 6765

Contact angle measurement Cleanroom Huib van Vossen 6769

EDX/EDS NL1.044 Mark Smithers 5922

NL1.048 Rico Keim 5915

EBIC NL1.044 Mark Smithers 5922

EBSD NL1.044 Mark Smithers 5922

EELS NL1.048 Rico Keim 5915

EFTEM NL1.048 Rico Keim 5915

Ellipsometer Cleanroom Eddy Ruiter 6765

Cleanroom Christiaan Bruinink 6399

FIB NL1.050 Henk van Wolferen 5994

HIM NL1.046 -------------------------- -------

Interferometry Cleanroom Huib van Vossen 6769

Mechanical profilometer Cleanroom Robert Wijn 6770

Optical microscopes Cleanroom Huib van Vossen 6769

NL1.027 Rico Keim 5915

Parameter analyzer Cleanroom Eddy Ruiter 6765

Reflectometer Cleanroom Huib van Vossen 6769

SEM NL1.044 Mark Smithers 5922

Cleanroom Gerard Kip 5977

TEM NL1.048 Rico Keim 5915

NL1.048 Mark Smithers 5922

XPS NL1.029 Gerard Kip 5977

XRD NL1.021 Eddy Ruiter 6765



To do list

• Vibrating Sample Magnetometer Thijs Bolhuis

• UV Raman spectroscopy (in bio department?

• AFM types available (Martin Siekman)

• Meetmethodieken BioNanoLab (Henk)


HIM

0.2nm

0.1

nm

1nm e-He+

Measurement and Analysis facilities in Nanolab · – Light diffusion measurement: Candela CS10...

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Transcript of Measurement and Analysis facilities in Nanolab · – Light diffusion measurement: Candela CS10...