MCP631/2/3/4/5/9 Data Sheet · 2014. 8. 7. · 2009-2014 Microchip Technology Inc. DS20002197C-page...

MCP631/2/3/4/5/924 MHz, 2.5 mA Rail-to-Rail Output (RRO) Op Amps

Features:• Gain-Bandwidth Product: 24 MHz• Slew Rate: 10 V/µs• Noise: 10 nV/Hz at 1 MHz)• Low Input Bias Current: 4 pA (typical)• Ease of Use:

- Unity-Gain Stable- Rail-to-Rail Output- Input Range including Negative Rail- No Phase Reversal

• Supply Voltage Range: +2.5V to +5.5V• High Output Current: ±70 mA• Supply Current: 2.5 mA/ch (typical)• Low-Power Mode: 1 µA/ch• Small Packages: SOT23-5, DFN• Extended Temperature Range: -40°C to +125°C

Typical Applications:• Fast Low-Side Current Sensing• Point-of-Load Control Loops• Power Amplifier Control Loops• Barcode Scanners• Optical Detector Amplifier• Multi-Pole Active Filter

Design Aids:• SPICE Macro Models• FilterLab® Software• Microchip Advanced Part Selector (MAPS)• Analog Demonstration and Evaluation Boards• Application Notes

Description:The Microchip Technology Inc. MCP631/2/3/4/5/9family of operational amplifiers features high gainbandwidth product (24 MHz, typical) and high outputshort-circuit current (70 mA, typical). Some alsoprovide a Chip Select (CS) pin that supports alow-power mode of operation. These amplifiers areoptimized for high speed, low noise and distortion,single-supply operation with rail-to-rail output and aninput that includes the negative rail.

This family is offered in single (MCP631), single withCS pin (MCP633), dual (MCP632), dual with two CSpins (MCP635), quad (MCP634) and quad with twoChip Select pins (MCP639). All devices are fullyspecified from -40°C to +125°C.

Typical Application Circuit

VOUT

0A – 20 AMCP63X

0.005

51.1

51.1 2.0 k

+5V

0V – 4V

+-

High Gain-Bandwidth Op Amp PortfolioModel Family Channels/Package Gain-Bandwidth VOS (max.) IQ/Ch (typ.)

MCP621/1S/2/3/4/5/9 1, 2, 4 20 MHz 0.2 mV 2.5 mAMCP631/2/3/4/5/9 1, 2, 4 24 MHz 8.0 mV 2.5 mAMCP651/1S/2/3/4/5/9 1, 2, 4 50 MHz 0.2 mV 6.0 mAMCP660/1/2/3/4/5/9 1, 2, 3, 4 60 MHz 8.0 mV 6.0 mA

2009-2014 Microchip Technology Inc. DS20002197C-page 1

http://www.microchip.com/wwwproducts/Devices.aspx?product=MCP621http://www.microchip.com/wwwproducts/Devices.aspx?dDocName=en544294http://www.microchip.com/wwwproducts/Devices.aspx?dDocName=en540381http://www.microchip.com/wwwproducts/Devices.aspx?product=MCP660

MCP631/2/3/4/5/9

Package Types

MCP631SOIC

MCP632SOIC

VIN+

VIN–

VSS

VDDVOUT

1

2

3

4

8

7

6

5 NC

NCNC

VINA+VINA–

VSS

1234

8765

VOUTA VDDVOUTBVINB-VINB+

MCP635MSOP

VINA+VINA–

VSS

1234

10987

VOUTA VDDVOUTBVINB-VINB+

CSA 5 6 CSB

MCP6323x3 DFN*

VINA+

VINA–

VSS

VOUTA VDDVOUTBVINB–

VINB+

* Includes Exposed Thermal Pad (EP); see Table 3-1.

1

2

3

4

8

7

6

5

MCP633SOIC

VIN+

VIN–

VSS

VDDVOUT

1

2

3

4

8

7

6

5 NC

CSNC

MCP634SOIC, TSSOP

VINA+VINA-

VDD

1234

14131211

VOUTA VOUTDVIND-

VIND+VSS

VINB+ 5 10 VINC+VINB- 6 9

VOUTB 7 8 VOUTC

VINC-

2VDD

VINB+

VINA- VIND+

VSS

VIN

B-

VINC+

VO

UTB

CS

BC

VO

UTC

VINC-V

OU

TA

CS

AD

VO

UTD

VIN

D-

VINA+ EP

161

15 14 13

3

4

12

1110

95 6 7 8

17

MCP6394x4 QFN*

EP9

MCP6312x3 TDFN*

VIN+

VIN–

VSS

VDDVOUT

1

2

34

8

7

65 NC

NCNC

EP9

VIN+

VOUT

VSS

VIN-

MCP631SOT-23-5

VDD1

2

3 4

5

CS

VIN+

VOUT

VSS

VIN-

MCP633SOT-23-6

VDD1

2

3 4

5

6

MCP6353x3 DFN*

VINA+VINA–

CSA

VOUTA VDDVOUTBVINB-

CSB

123

5

1098

6VSS VINB+4 7

EP11

DS20002197C-page 2 2009-2014 Microchip Technology Inc.

MCP631/2/3/4/5/9

1.0 ELECTRICAL CHARACTERISTICS

1.1 Absolute Maximum Ratings †VDD – VSS .......................................................................6.5VCurrent at Input Pins ....................................................±2 mAAnalog Inputs (VIN+ and VIN–) †† . VSS – 1.0V to VDD + 1.0VAll other Inputs and Outputs .......... VSS – 0.3V to VDD + 0.3VOutput Short-Circuit Current ................................ContinuousCurrent at Output and Supply Pins ..........................±150 mAStorage Temperature ...................................-65°C to +150°CMaximum Junction Temperature ................................+150°CESD protection on all pins (HBM, MM) 1 kV, 200V

† Notice: Stresses above those listed under “AbsoluteMaximum Ratings” may cause permanent damage to thedevice. This is a stress rating only and functional operation ofthe device at those or any other conditions above thoseindicated in the operational listings of this specification is notimplied. Exposure to maximum rating conditions for extendedperiods may affect device reliability.†† See Section 4.1.2 “Input Voltage and Current Limits”.

1.2 Specifications

DC ELECTRICAL SPECIFICATIONSElectrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/3,VOUT VDD/2, VL = VDD/2, RL = 2 k to VL and CS = VSS (refer to Figure 1-2).

Parameters Sym. Min. Typ. Max. Units ConditionsInput OffsetInput Offset Voltage VOS -8 ±1.8 +8 mVInput Offset Voltage Drift VOS/TA — ±2.0 — µV/°C TA = -40°C to +125°CPower Supply Rejection Ratio PSRR 61 76 — dBInput Current and ImpedanceInput Bias Current IB — 4 — pA

Across Temperature IB — 100 — pA TA = +85°CAcross Temperature IB — 1500 5000 pA TA = +125°C

Input Offset Current IOS — ±2 — pACommon-Mode Input Impedance ZCM — 1013||9 — ||pFDifferential Input Impedance ZDIFF — 1013||2 — ||pFCommon ModeCommon-Mode Input Voltage Range VCMR VSS 0.3 — VDD 1.3 V Note 1Common-Mode Rejection Ratio CMRR 63 78 — dB VDD = 2.5V, VCM = -0.3V to 1.2V

66 81 — dB VDD = 5.5V, VCM = -0.3V to 4.2VOpen-Loop GainDC Open-Loop Gain (large signal) AOL 88 115 — dB VDD = 2.5V, VOUT = 0.3V to 2.2V

94 124 — dB VDD = 5.5V, VOUT = 0.3V to 5.2VOutputMaximum Output Voltage Swing VOL, VOH VSS + 20 — VDD 20 mV VDD = 2.5V, G = +2,

0.5V Input OverdriveVSS + 40 — VDD 40 mV VDD = 5.5V, G = +2,

0.5V Input OverdriveOutput Short-Circuit Current ISC ±40 ±85 ±130 mA VDD = 2.5V (Note 2)

ISC ±35 ±70 ±110 mA VDD = 5.5V (Note 2)Power SupplySupply Voltage VDD 2.5 — 5.5 VQuiescent Current per Amplifier IQ 1.2 2.5 3.6 mA No Load CurrentNote 1: See Figure 2-5 for temperature effects.

2: The ISC specifications are for design guidance only; they are not tested.


MCP631/2/3/4/5/9

AC ELECTRICAL SPECIFICATIONSElectrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,VOUT VDD/2, VL = VDD/2, RL = 2 k to VL, CL = 50 pF and CS = VSS (refer to Figure 1-2).

Parameters Sym. Min. Typ. Max. Units ConditionsAC ResponseGain-Bandwidth Product GBWP — 24 — MHzPhase Margin PM — 65 — ° G = +1Open-Loop Output Impedance ROUT — 20 — AC DistortionTotal Harmonic Distortion plus Noise THD + N — 0.0015 — % G = +1, VOUT = 2VP-P, f = 1 kHz,

VDD = 5.5V, BW = 80 kHzStep ResponseRise Time, 10% to 90% tr — 20 — ns G = +1, VOUT = 100 mVP-PSlew Rate SR — 10 — V/µs G = +1NoiseInput Noise Voltage Eni — 16 — µVP-P f = 0.1 Hz to 10 HzInput Noise Voltage Density eni — 10 — nV/Hz f = 1 MHzInput Noise Current Density ini 4 — fA/Hz f = 1 kHz

DIGITAL ELECTRICAL SPECIFICATIONSElectrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,VOUT VDD/2, VL = VDD/2, RL = 2 k to VL, CL = 50 pF and CS = VSS (refer to Figures 1-1 and 1-2).

Parameters Sym. Min. Typ. Max. Units Conditions

CS Low Specifications

CS Logic Threshold, Low VIL VSS — 0.2VDD V

CS Input Current, Low ICSL — 0.1 — nA CS = 0V

CS High Specifications

CS Logic Threshold, High VIH 0.8VDD VDD V

CS Input Current, High ICSH — 0.7 — µA CS = VDDGND Current ISS -2 -1 — µA

CS Internal Pull-Down Resistor RPD — 5 — M

Amplifier Output Leakage IO(LEAK) — 50 — nA CS = VDD, TA = +125°C

CS Dynamic Specifications

CS Input Hysteresis VHYST — 0.25 — V

CS High to Amplifier Off Time(output goes High Z)

tOFF — 200 — ns G = +1 V/V, VL = VSS,CS = 0.8VDD to VOUT = 0.1(VDD/2)

CS Low to Amplifier On Time tON — 2 10 µs G = +1 V/V, VL = VSS,CS = 0.2VDD to VOUT = 0.9(VDD/2)


MCP631/2/3/4/5/9

1.3 Timing Diagram

FIGURE 1-1: Timing Diagram.

1.4 Test CircuitsThe circuit used for most DC and AC tests is shown inFigure 1-2. It independently sets VCM and VOUT; seeEquation 1-1. The circuit’s Common-Mode voltage is(VP + VM)/2, not VCM. VOST includes VOS plus theeffects of temperature, CMRR, PSRR and AOL.

EQUATION 1-1:

TEMPERATURE SPECIFICATIONSElectrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.5V to +5.5V, VSS = GND.

Parameters Sym. Min. Typ. Max. Units ConditionsTemperature RangesSpecified Temperature Range TA -40 — +125 °C

Operating Temperature Range TA -40 — +125 °C Note 1

Storage Temperature Range TA -65 — +150 °C

Thermal Package ResistancesThermal Resistance, 5L-SOT-23 θJA — 201.0 — °C/WThermal Resistance, 6L-SOT-23 θJA — 190.5 — °C/WThermal Resistance, 8L-2x3 TDFN θJA — 52.5 — °C/WThermal Resistance, 8L-3x3 DFN θJA — 56.7 — °C/W Note 2Thermal Resistance, 8L-SOIC θJA — 149.5 — °C/WThermal Resistance, 10L-3x3 DFN θJA — 54.0 — °C/W Note 2Thermal Resistance, 10L-MSOP θJA — 202 — °C/WThermal Resistance, 14L-SOIC θJA — 90.8 — °C/WThermal Resistance, 14L-TSSOP θJA — 100 — °C/WThermal Resistance, 16L-4x4-QFN θJA — 52.1 — °C/W Note 2Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (+150°C).

2: Measured on a standard JC51-7, four-layer printed circuit board with ground plane and vias.

VOUT

ISS

ICS

-1 µA

High Z

0.7 µA

On

-2.5 mA-1 µA

tON tOFF

High Z

0.1 nA 0.7 µA

CS VIL VIH

(typical) (typical) (typical)

(typical)(typical) (typical) Where:

GDM = Differential Mode Gain (V/V)GN = Noise Gain (V/V)

VCM = Op Amp’s Common-ModeInput Voltage

(V)

VOST = Op Amp’s Total Input OffsetVoltage

(mV)

GDMRFRG-------=

GN 1 GDM+=

VCM VP 11

GN-------–

VREF1

GN------- +=

VOST VIN- VIN+–=

VOUT VREF VP VM– GDM VOSTGN+ +=


MCP631/2/3/4/5/9

FIGURE 1-2: AC and DC Test Circuit for Most Specifications.

VDD

RG RFVOUTVM

CB2

CLRL

VL

CB1

10 k10 k

RG RFVREF = VDD/2

VP10 k10 k

50 pF2 k

2.2 µF100 nF

VIN-

VIN+

CF

CF6.8 pF

MCP63X

6.8 pF


MCP631/2/3/4/5/9

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,VL = VDD/2, RL = 2 kto VL, CL = 50 pF and CS = VSS.

2.1 DC Signal Inputs

FIGURE 2-1: Input Offset Voltage.

FIGURE 2-2: Input Offset Voltage Drift.

FIGURE 2-3: Input Offset Voltage vs. Power Supply Voltage with VCM = 0V.

FIGURE 2-4: Input Offset Voltage vs. Output Voltage.

FIGURE 2-5: Low-Input Common-Mode Voltage Headroom vs. Ambient Temperature.

FIGURE 2-6: High-Input Common-Mode Voltage Headroom vs. Ambient Temperature.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0%

2%

4%

6%

8%

10%

12%

14%

-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6Input Offset Voltage (mV)

Perc

enta

ge o

f Occ

urre

nces

396 SamplesTA = +25°CVDD = 2.5V and 5.5V

0%

2%4%

6%8%

10%12%14%

16%

-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8Input Offset Voltage Drift (µV/°C)

Perc

enta

ge o

f Occ

urre

nces

398 SamplesVDD = 2.5V and 5.5VTA = -40°C to +125°C

-4.0-3.8-3.6-3.4-3.2-3.0-2.8-2.6-2.4-2.2-2.0

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5Power Supply Voltage (V)

Inpu

t Offs

et V

olta

ge (m

V)

+125°C+85°C+25°C-40°C

Representative PartVCM = VSS

-3.0-2.8-2.6-2.4-2.2-2.0-1.8-1.6-1.4-1.2-1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5Output Voltage (V)

Inpu

t Offs

et V

olta

ge (m

V)

VDD = 2.5V

VDD = 5.5V

Representative Part

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

-50 -25 0 25 50 75 100 125Ambient Temperature (°C)

Low

Inpu

t Com

mon

Mod

e H

eadr

oom

(V)

1 LotLow (VCMR_L – VSS)

VDD = 2.5V and 5.5V

0.9

1.0

1.1

1.2

1.3


Hig

h In

put C

omm

onM

ode

Hea

droo

m (V

)

VDD = 2.5V

VDD = 5.5V

1 LotHigh (VDD – VCMR_H)


MCP631/2/3/4/5/9


FIGURE 2-7: Input Offset Voltage vs. Common-Mode Voltage with VDD = 2.5V.

FIGURE 2-8: Input Offset Voltage vs. Common-Mode Voltage with VDD = 5.5V.

FIGURE 2-9: CMRR and PSRR vs. Ambient Temperature.

FIGURE 2-10: DC Open-Loop Gain vs. Ambient Temperature.

FIGURE 2-11: DC Open-Loop Gain vs. Load Resistance.

FIGURE 2-12: Input Bias and Offset Currents vs. Ambient Temperature with VDD = 5.5V.

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

1.5

2.0

-0.5 0.0

0.5

1.0

1.5

2.0

2.5

3.0

Input Common Mode Voltage (V)

Inpu

t Offs

et V

olta

ge (m

V)

VDD = 2.5VRepresentative Part

+125°C+85°C+25°C-40°C

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

1.5

2.0

-0.5 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Input Common Mode Voltage (V)

Inpu

t Offs

et V

olta

ge (m

V)

VDD = 5.5VRepresentative Part

+125°C+85°C+25°C-40°C

6065707580859095

100105110


CM

RR

, PSR

R (d

B)

PSRR

CMRR, VDD = 2.5VCMRR, VDD = 5.5V

100

105

110

115

120

125

130


DC

Ope

n-Lo

op G

ain

(dB

)

VDD = 5.5V

VDD = 2.5V

95

100

105

110

115

120

125

130

1.E+02 1.E+03 1.E+04 1.E+05Load Resistance (Ω)

DC

Ope

n-Lo

op G

ain

(dB

) VDD = 5.5V

VDD = 2.5V

100 1k 10k 100k

1.E-12

1.E-11

1.E-10

1.E-09

1.E-08

25 45 65 85 105 125Ambient Temperature (°C)

Inpu

t Bia

s, O

ffset

Cur

rent

s(p

A)

VDD = 5.5VVCM = VCMR_H

| IOS |

IB

1p

10p

100p

1n

10n


MCP631/2/3/4/5/9


FIGURE 2-13: Input Bias Current vs. Input Voltage (below VSS).

FIGURE 2-14: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +85°C.

FIGURE 2-15: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +125°C.

1.E-121.E-111.E-101.E-091.E-081.E-071.E-061.E-051.E-041.E-03

-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0Input Voltage (V)

Inpu

t Cur

rent

Mag

nitu

de (A

)

+125°C+85°C+25°C-40°C

1m100µ

10µ1µ

100n10n

1n100p10p

1p

-200

-150

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

Common Mode Input Voltage (V)

Inpu

t Bia

s, O

ffset

Cur

rent

s(p

A)

IB

Representative PartTA = +85°CVDD = 5.5V

IOS

-1500

-1000

-500

0

500

1000

1500

2000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0


Inpu

t Bia

s, O

ffset

Cur

rent

s(p

A)

IB

Representative PartTA = +125°CVDD = 5.5V

IOS


MCP631/2/3/4/5/9


2.2 Other DC Voltages and Currents

FIGURE 2-16: Output Voltage Headroom vs. Output Current.

FIGURE 2-17: Output Voltage Headroom vs. Ambient Temperature.

FIGURE 2-18: Output Short-Circuit Current vs. Power Supply Voltage.

FIGURE 2-19: Supply Current vs. Power Supply Voltage.

FIGURE 2-20: Supply Current vs. Common-Mode Input Voltage.

1

10

100

1000

0.1 1 10 100Output Current Magnitude (mA)

Out

put V

olta

ge H

eadr

oom

(mV)

VDD = 2.5V

VDD = 5.5V

VDD – VOH

VOL – VSS

02468

101214161820


Out

put H

eadr

oom

(mV)

VDD = 5.5VVOL – VSS

VDD = 2.5V VDD – VOH

RL = 2 kΩ

-100-80-60-40-20

020406080

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Power Supply Voltage (V)

Out

put S

hort

Circ

uit C

urre

nt(m

A)

+125°C+85°C+25°C-40°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5


Supp

ly C

urre

nt(m

A/a

mpl

ifier

)

+125°C+85°C+25°C-40°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-0.5 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0


Supp

ly C

urre

nt(m

A/a

mpl

ifier

)

VDD = 2.5V

VDD = 5.5V


MCP631/2/3/4/5/9


2.3 Frequency Response

FIGURE 2-21: CMRR and PSRR vs. Frequency.

FIGURE 2-22: Open-Loop Gain vs. Frequency.

FIGURE 2-23: Gain-Bandwidth Product and Phase Margin vs. Ambient Temperature.

FIGURE 2-24: Gain-Bandwidth Product and Phase Margin vs. Common-Mode Input Voltage.

FIGURE 2-25: Gain-Bandwidth Product and Phase Margin vs. Output Voltage.

FIGURE 2-26: Closed-Loop Output Impedance vs. Frequency.

102030405060708090

100

1.E+2 1.E+3 1.E+4 1.E+5 1.E+6 1.E+7Frequency (Hz)

CM

RR

, PSR

R (d

B)

100 1M10k 10M100k1k

CMRRPSRR+PSRR-

-20

0

20

40

60

80

100

120

140

1.E+0 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 1.E+6 1.E+7 1.E+8Frequency (Hz)

Ope

n-Lo

op G

ain

(dB

)

-240

-210

-180

-150

-120

-90

-60

-30

0

Ope

n-Lo

op P

hase

(°)

| AOL |

AOL

100 10k 1M 100M1 1k 100k 10M10

20

22

24

26

28

30

32

34

36


Gai

n B

andw

idth

Pro

duct

(M

Hz)

40

45

50

55

60

65

70

75

80

Phas

e M

argi

n (°

)

PM

GBWP

VDD = 5.5VVDD = 2.5V

20

22

24

26

28

30

32

34

36

-0.5 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0


Gai

n B

andw

idth

Pro

duct

(MH

z)

40

45

50

55

60

65

70

75

80

Phas

e M

argi

n (°

)PM

GBWP


20

22

24

26

28

30

32

34

36

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5Output Voltage (V)

Gai

n B

andw

idth

Pro

duct

(MH

z)

40

45

50

55

60

65

70

75

80

Phas

e M

argi

n (°

)

PM

GBWP


0.1

1

10

100

1.0E+04 1.0E+05 1.0E+06 1.0E+07 1.0E+08Frequency (Hz)

10k 1M 10M 100MClo

sed-

Loop

Out

put I

mpe

danc

e (Ω

)

100k

G = 101 V/VG = 11 V/V

G = 1 V/V


MCP631/2/3/4/5/9


FIGURE 2-27: Gain Peaking vs. Normalized Capacitive Load.

FIGURE 2-28: Channel-to-Channel Separation vs. Frequency.

0123456789

10

1.0E-11 1.0E-10 1.0E-09Normalized Capacitive Load; CL/GN (F)

Gai

n Pe

akin

g (d

B)

10p 100p 1n

GN = 1 V/VGN = 2 V/VGN 4 V/V

5060708090

100110120130140150

1.E+03 1.E+04 1.E+05 1.E+06 1.E+07Frequency (Hz)

Cha

nnel

-to-C

hann

elSe

para

tion;

RTI

(dB

)

1k 10k 100k

VCM = VDD/2G = +1 V/V

RS = 10 kΩRS = 100 kΩ

1M 10M

RS = 0ΩRS = 100ΩRS = 1 kΩ


MCP631/2/3/4/5/9


2.4 Noise and Distortion

FIGURE 2-29: Input Noise Voltage Density vs. Frequency.

FIGURE 2-30: Input Noise Voltage Density vs. Input Common-Mode Voltage with f = 100 Hz.

FIGURE 2-31: Input Noise Voltage Density vs. Input Common-Mode Voltage with f = 1 MHz.

FIGURE 2-32: Input Noise vs. Time with 0.1 Hz Filter.

FIGURE 2-33: THD+N vs. Frequency.

1.E+0

1.E+1

1.E+2

1.E+3

1.E+4

1.E-1 1.E+0 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 1.E+6 1.E+7Frequency (Hz)

0.1 100 10k 1MInp

ut N

oise

Vol

tage

Den

sity

(V/

Hz)

1 1k 100k 10M101n

100n

1µ

10µ

10n

020406080

100120140160180200

-0.5 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0


VDD = 5.5V

VDD = 2.5V

Inpu

t Noi

se V

olta

ge D

ensi

ty(n

V/H

z)

f = 100 Hz

02468

101214161820

-0.5 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5


VDD = 5.5V

VDD = 2.5V

Inpu

t Noi

se V

olta

ge D

ensi

ty(n

V/H

z)

f = 1 MHz

-20

-15

-10

-5

0

5

10

15

20

0 5 10 15 20 25 30 35 40 45 50 55 60 65Time (min)

Inpu

t Noi

se; e

ni(t)

(µV)

Representative Part

Analog NPBW = 0.1 HzSample Rate = 2 SPSVOS = -3150 µV

0.0001

0.001

0.01

0.1

1

1.E+2 1.E+3 1.E+4 1.E+5Frequency (Hz)

THD

+ N

oise

(%)

VDD = 5.0VVOUT = 2 VP-P

100 1k 10k 100k

BW = 22 Hz to 80 kHz

BW = 22 Hz to > 500 kHz G = 1 V/VG = 11 V/V


MCP631/2/3/4/5/9


2.5 Time Response

FIGURE 2-34: Non-Inverting Small Signal Step Response.

FIGURE 2-35: Non-Inverting Large Signal Step Response.

FIGURE 2-36: Inverting Small Signal Step Response.

FIGURE 2-37: Inverting Large Signal Step Response.

FIGURE 2-38: The MCP631/2/3/4/5/9 Family Shows No Input Phase Reversal With Overdrive.

FIGURE 2-39: Slew Rate vs. Ambient Temperature.

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8Time (µs)

Out

put V

olta

ge (1

0 m

V/di

v)

VDD = 5.5VG = 1

VIN VOUT

0.00.51.01.52.02.53.03.54.04.55.05.5

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0Time (µs)

Out

put V

olta

ge (V

)

VDD = 5.5VG = 1

VIN VOUT

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8Time (µs)

Out

put V

olta

ge (1

0 m

V/di

v)

VDD = 5.5VG = -1RF = 1 kΩ

VIN

VOUT

0.00.51.01.52.02.53.03.54.04.55.05.5

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0Time (µs)

Out

put V

olta

ge (V

)

VDD = 5.5VG = -1RF = 1 kΩ

VIN

VOUT

-1

0

1

2

3

4

5

6

7

0 1 2 3 4 5 6 7 8 9 10Time (ms)

Inpu

t, O

utpu

t Vol

tage

s (V

) VDD = 5.5VG = 2

VOUT

VIN

02468

1012141618202224


Slew

Rat

e (V

/µs)

Falling Edge

Rising Edge

VDD = 2.5V

VDD = 5.5V


MCP631/2/3/4/5/9


FIGURE 2-40: Maximum Output Voltage Swing vs. Frequency.

0.1

1

10

1.E+05 1.E+06 1.E+07 1.E+08Frequency (Hz)

Max

imum

Out

put V

olta

geSw

ing

(VP-

P)

VDD = 5.5V

VDD = 2.5V

100k 1M 10M 100M


MCP631/2/3/4/5/9


2.6 Chip Select Response

FIGURE 2-41: CS Current vs. Power Supply Voltage.

FIGURE 2-42: CS and Output Voltages vs. Time with VDD = 2.5V.

FIGURE 2-43: CS and Output Voltages vs. Time with VDD = 5.5V.

FIGURE 2-44: CS Hysteresis vs. Ambient Temperature.

FIGURE 2-45: CS Turn-On Time vs. Ambient Temperature.

FIGURE 2-46: CS Pull-Down Resistor (RPD) vs. Ambient Temperature.

0.00.10.20.30.40.50.60.70.80.91.01.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5Power Supply Voltage (V)

CS

Cur

rent

(µA

)

CS = VDD

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 2 4 6 8 10 12 14 16 18 20Time (µs)

CS,

VO

UT

(V)

VDD = 2.5VG = 1VL = 0V

On

CS

VOUT

OffOff

-1

0

1

2

3

4

5

6

0 2 4 6 8 10 12 14 16 18 20Time (µs)

CS,

VO

UT

(V)

VDD = 5.5VG = 1VL = 0V

On

CS

VOUT

OffOff

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40


CS

Hys

tere

sis

(V)

VDD = 2.5V

VDD = 5.5V

0

1

2

3

4

5


CS

Turn

On

Tim

e (µ

s)

VDD = 2.5V

VDD = 5.5V

0

1

2

3

4

5

6

7

8


CS

Pull-

dow

n R

esis

tor

(MΩ

)

Representative Part


MCP631/2/3/4/5/9


FIGURE 2-47: Quiescent Current in Shutdown vs. Power Supply Voltage.

FIGURE 2-48: Output Leakage Current vs. Output Voltage.

-2.2-2.0-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.20.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5


Neg

ativ

e Po

wer

Sup

ply

Cur

rent

; ISS

(µA

)

CS = VDD

-40°C+25°C+85°C

+125°C

1.E-11

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0Output Voltage (V)

Out

put L

eaka

ge C

urre

nt (A

)

+25°C

+125°C

+85°C

CS = VDD = 5.5V1µ

100n

10n

1n

100p

10p


MCP631/2/3/4/5/9

3.0 PIN DESCRIPTIONSDescriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLEM

CP6

31

MC

P632

MC

P633

MC

P634

MC

P635

MC

P639

Sym

bol

Description

SOIC SOT-232x3

TDFN SOIC3x3 DFN SOIC

SOT-23 SOIC TSSOP MSOP

3x3 DFN QFN

2 4 2 2 2 2 4 2 2 2 2 1 VIN-, VINA-

Inverting Input (op amp A)

3 3 3 3 3 3 3 3 3 3 3 2 VIN+, VINA+

Non-Inverting Input (op amp A)

7 5 7 8 8 7 6 4 4 10 10 3 VDD Positive Power Supply— — — 5 5 — — 5 5 7 7 4 VINB+ Non-Inverting Input (op

amp B)— — — 6 6 — — 6 6 8 8 5 VINB- Inverting Input (op amp B)— — — 7 7 — — 7 7 9 9 6 VOUTB Output (op amp B)— — — — — — — — — — — 7 CSBC Chip Select Digital Input

(op amp B and C)— — — — — — — 8 8 — — 8 VOUTC Output (op amp C)— — — — — — — 9 9 — — 9 VINC- Inverting Input (op amp C)— — — — — — — 10 10 — — 10 VINC+ Non-Inverting Input (op

amp C)4 2 4 4 4 4 2 11 11 4 4 11 VSS Negative Power Supply— — — — — — — 12 12 — — 12 VIND+ Non-Inverting Input (op

amp D)— — — — — — — 13 13 — — 13 VIND- Inverting Input (op amp D)— — — — — — — 14 14 — — 14 VOUTD Output (op amp D)— — — — — — — — — — — 15 CSAD Chip Select Digital Input

(op amp A and D)6 1 6 1 1 6 1 1 1 1 1 16 VOUT,

VOUTAOutput (op amp A)

— — 9 — 9 — — — — — 11 17 EP Exposed Thermal Pad (EP); must be connected to VSS

— — — — — 8 5 — — 5 5 — CS, CSA Chip Select Digital Input (op amp A)

— — — — — — — — — 6 6 — CSB Chip Select Digital Input (op amp B)

1,5,8

— 1, 5, 8

— — 1, 5 — — — — — — NC No Internal Connection


MCP631/2/3/4/5/9

3.1 Analog OutputsThe analog output pins (VOUT) are low-impedancevoltage sources.

3.2 Analog InputsThe non-inverting and inverting inputs (VIN+, VIN-, …)are high-impedance CMOS inputs with low biascurrents.

3.3 Power Supply PinsThe positive power supply (VDD) is 2.5V to 5.5V higherthan the negative power supply (VSS). For normaloperation, the other pins are between VSS and VDD.

Typically, these parts are used in a single (positive)supply configuration. In that case, VSS is connected toground and VDD is connected to the supply. VDD willneed bypass capacitors.

3.4 Chip Select Digital Input (CS)This input (CS) is a CMOS, Schmitt-triggered input thatplaces the part into a low-power mode of operation.

3.5 Exposed Thermal Pad (EP)There is an internal connection between the exposedthermal pad (EP) and the VSS pin; they must beconnected to the same potential on the printed circuitboard (PCB).This pad can be connected to a PCB ground plane toprovide a larger heat sink. This improves the packagethermal resistance (JA).


MCP631/2/3/4/5/9

DS

4.0 APPLICATIONSThe MCP631/2/3/4/5/9 family is manufactured usingthe Microchip state-of-the-art CMOS process. It isdesigned for low-cost, low-power and high-speedapplications. Its low supply voltage, low quiescentcurrent and wide bandwidth make theMCP631/2/3/4/5/9 ideal for battery-poweredapplications.

4.1 Input

4.1.1 PHASE REVERSALThe input devices are designed to exhibit no phaseinversion when the input pins exceed the supplyvoltages. Figure 2-38 shows an input voltageexceeding both supplies with no phase inversion.

4.1.2 INPUT VOLTAGE AND CURRENT LIMITS

The electrostatic discharge (ESD) protection on theinputs can be depicted as shown in Figure 4-1. Thisstructure was chosen to protect the input transistorsand to minimize input bias current (IB). The input ESDdiodes clamp the inputs when they try to go more thanone diode drop below VSS. They also clamp anyvoltages that go too far above VDD; their breakdownvoltage is high enough to allow normal operation andlow enough to bypass quick ESD events within thespecified limits.

FIGURE 4-1: Simplified Analog Input ESD Structures.In order to prevent damage and/or improper operationof these amplifiers, the circuit must limit the currents(and voltages) at the input pins (see Section 1.1“Absolute Maximum Ratings †”). Figure 4-2 showsthe recommended approach to protecting these inputs.

The internal ESD diodes prevent the input pins (VIN+and VIN-) from going too far below ground, while theresistors R1 and R2 limit the possible current drawn outof the input pins. Diodes D1 and D2 prevent the inputpins (VIN+ and VIN-) from going too far above VDD anddump any currents onto VDD.

When implemented as shown, resistors R1 and R2 alsolimit the current through D1 and D2.

FIGURE 4-2: Protecting the Analog Inputs.It is also possible to connect the diodes to the left of theresistors R1 and R2. If so, the currents through thediodes D1 and D2 need to be limited by some othermechanism. The resistors then serve as in-rush currentlimiters; the DC current into the input pins (VIN+ andVIN-) should be very small.

A significant amount of current can flow out of theinputs (through the ESD diodes) when theCommon-Mode voltage (VCM) is below ground (VSS);see Figure 2-13. Applications that are high-impedancemay need to limit the usable voltage range.

4.1.3 NORMAL OPERATIONThe input stage of the MCP631/2/3/4/5/9 op amps usesa differential PMOS input stage. It operates at lowCommon-Mode input voltages (VCM), with VCMbetween VSS – 0.3V and VDD – 1.3V. To ensure properoperation, the input offset voltage (VOS) is measured atboth VCM = VSS – 0.3V and VCM = VDD – 1.3V. SeeFigures 2-5 and 2-6 for temperature effects.

When operating at very low non-inverting gains, theoutput voltage is limited at the top by the VCM range(< VDD – 1.3V); see Figure 4-3.

FIGURE 4-3: Unity-Gain Voltage Limitations for Linear Operation.

BondPad

BondPad

BondPad

VDD

VIN+

VSS

InputStage

BondPad

VIN-

V1R1

VDD

D1

VOUTV2R2

D2MCP63X

R1VSS minimum expected V1 –

2 mA------------------------------------------------------------------------

R2VSS minimum expected V2 –

2 mA------------------------------------------------------------------------

VIN

VDD

VOUT

MCP63X+

-

VSS VINVOUT VDD 1.3V–

20002197C-page 20 2009-2014 Microchip Technology Inc.

MCP631/2/3/4/5/9

4.2 Rail-to-Rail Output

4.2.1 MAXIMUM OUTPUT VOLTAGEThe maximum output voltage (see Figures 2-16and 2-17) describes the output range for a given load.For instance, the output voltage swings to within 50 mVof the negative rail with a 1 k load tied to VDD/2.

4.2.2 OUTPUT CURRENTFigure 4-4 shows the possible combinations of outputvoltage (VOUT) and output current (IOUT), whenVDD = 5.5V.

IOUT is positive when it flows out of the op amp into theexternal circuit.

FIGURE 4-4: Output Current.

4.2.3 POWER DISSIPATIONSince the output short-circuit current (ISC) is specifiedat ±70 mA (typical), these op amps are capable of bothdelivering and dissipating significant power.

FIGURE 4-5: Diagram for Power Calculations.

Figure 4-5 shows the power calculations used for asingle op amp:

• RSER is 0 in most applications and can be used to limit IOUT.

• VOUT is the op amp’s output voltage.• VL is the voltage at the load.• VLG is the load’s ground point.• VSS is usually ground (0V).

The input currents are assumed to be negligible. Thecurrents shown in Figure 4-5 can be approximatedusing Equation 4-1:

EQUATION 4-1:

The instantaneous op amp power (POA(t)), RSER power(PRSER(t)) and load power (PL(t)) are:

EQUATION 4-2:

The maximum op amp power, for resistive loads,occurs when VOUT is halfway between VDD and VLG orhalfway between VSS and VLG.

EQUATION 4-3:

The maximum ambient to junction temperature rise(TJA) and junction temperature (TJ) can be calculatedusing POAmax, the ambient temperature (TA), thepackage thermal resistance (JA, found in theTemperature Specifications table) and the number ofop amps in the package (assuming equal powerdissipations), as shown in Equation 4-4:

EQUATION 4-4:

-0.50.00.51.01.52.02.53.03.54.04.55.05.56.0

-120

-100 -8

0

-60

-40

-20 0 20 40 60 80 100

120

IOUT (mA)

V OU

T (V

)

RL = 10Ω

RL = 100ΩRL = 1 kΩ

VOH Limited

VOL Limited

-I SC L

imite

d

+ISC

Lim

ited

(VDD = 5.5V)

VDD

VL

RL

VLG

IDD

ISS

IL

IOUT RSER

VOUT

VSS

MCP63X

+

-

Where:

IQ = Quiescent supply current

IOUT ILVOUT VLG–RSER RL+

------------------------------= =

IDD IQ max 0, IOUT +

ISS I– Q min 0, IOUT +

POA(t) = IDD (VDD – VOUT) + ISS (VSS – VOUT)

PRSER(t) = IOUT2RSERPL(t) = IL2RL

POAmax max2 VDD VLG– VLG VSS–

4 RSER RL+ -------------------------------------------------------------------------

Where:

n = Number of op amps in the package (1, 2)

TJA POA t JA nPOAmaxJA=TJ TA TJA+=


MCP631/2/3/4/5/9

The power derating across temperature for an op ampin a particular package can be easily calculated(assuming equal power dissipations):

EQUATION 4-5:

Several techniques are available to reduce TJA for agiven POAmax:

• Lower JA- Use another package- PCB layout (ground plane, etc.)- Heat sinks and air flow

• Reduce POAmax- Increase RL- Limit IOUT (using RSER)- Decrease VDD

4.3 Improving Stability

4.3.1 CAPACITIVE LOADSDriving large capacitive loads can cause stabilityproblems for voltage feedback op amps. As the loadcapacitance increases, the phase margin (stability) ofthe feedback loop decreases and the closed-loopbandwidth is reduced. This produces gain peaking inthe frequency response, with overshoot and ringing inthe step response. A unity-gain buffer (G = +1) is themost sensitive to capacitive loads, though all gainsshow the same general behavior.

When driving large capacitive loads with these opamps (e.g., > 20 pF when G = +1), a small seriesresistor at the output (RISO in Figure 4-6) improves thephase margin of the feedback loop by making theoutput load resistive at higher frequencies. Thebandwidth will be generally lower than the bandwidthwith no capacitive load.

FIGURE 4-6: Output Resistor, RISO, Stabilizes Large Capacitive Loads.

Figure 4-7 gives recommended RISO values fordifferent capacitive loads and gains. The x-axis is thenormalized load capacitance (CL/GN), where GN is thecircuit’s noise gain. For non-inverting gains, GN and theSignal Gain are equal. For inverting gains, GN is1 + |Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).

FIGURE 4-7: Recommended RISO Values for Capacitive Loads.After selecting RISO, double-check the resultingfrequency response peaking and step responseovershoot. Modify the value of RISO until the responseis reasonable. Bench evaluation and simulations withthe MCP631/2/3/4/5/9 SPICE macro model are helpful.

4.3.2 GAIN PEAKINGFigure 4-8 shows an op amp circuit that representsnon-inverting amplifiers (VM is a DC voltage and VP isthe input) or inverting amplifiers (VP is a DC voltageand VM is the input). The capacitances CN and CGrepresent the total capacitance at the input pins; theyinclude the op amp’s Common-Mode input capacitance(CCM), board parasitic capacitance and any capacitorplaced in parallel.

FIGURE 4-8: Amplifier with Parasitic Capacitance.CG acts in parallel with RG (except for a gain of +1 V/V),which causes an increase in gain at high frequencies.CG also reduces the phase margin of the feedbackloop, which becomes less stable. This effect can bereduced by either reducing CG or RF.

CN and RN form a low-pass filter that affects the signalat VP. This filter has a single real pole at 1/(2RNCN).

Where:

TJmax = Absolute maximum junction temperature

POAmax TJmax TA–

nJA--------------------------

RISOVOUT

CL

RG RF

RN MCP63X

-

+

10

100

1,000

1.E-12 1.E-11 1.E-10 1.E-09 1.E-08Normalized Capacitance; CL/GN (F)

Rec

omm

ende

d R

ISO (Ω

)

GN = +1GN +2

10p 100p 1n 10n

VP

RF

VOUT

RNCN

VMRG CG

MCP63X+

-


MCP631/2/3/4/5/9

The largest value of RF that should be used dependson the noise gain (see GN in Section 4.3.1“Capacitive Loads”), CG and the open-loop gain’sphase shift. Figure 4-9 shows the maximumrecommended RF for several CG values. Someapplications may modify these values to reduce eitheroutput loading or gain peaking (step responseovershoot).

FIGURE 4-9: Maximum Recommended RF vs. Gain.Figures 2-34 and 2-35 show the small signal and largesignal step responses at G = +1 V/V. The unity-gainbuffer usually has RF = 0 and RG open.

Figures 2-36 and 2-37 show the small signal and largesignal step responses at G = -1 V/V. Since the noisegain is 2 V/V and CG 10 pF, the resistors werechosen to be RF = RG = 1 k and RN = 500.

It is also possible to add a capacitor (CF) in parallel withRF to compensate for the destabilizing effect of CG.This makes it possible to use larger values of RF. Theconditions for stability are summarized in Equation 4-6.

EQUATION 4-6:

4.4 MCP633, MCP635 and MCP639 Chip Select

The MCP633 is a single amplifier with Chip Select(CS). When CS is pulled high, the supply current dropsto 1 µA (typical) and flows through the CS pin to VSS.When this happens, the amplifier output is put into ahigh-impedance state. By pulling CS low, the amplifieris enabled. The CS pin has an internal 5 M (typical)pull-down resistor connected to VSS, so it will go low ifthe CS pin is left floating. Figures 1-1, 2-42 and 2-43show the output voltage and supply current response toa CS pulse.

The MCP635 is a dual amplifier with two CS pins; CSAcontrols op amp A and CSB controls op amp B. Theseop amps are controlled independently, with an enabledquiescent current (IQ) of 2.5 mA/amplifier (typical) anda disabled IQ of 1 µA/amplifier (typical). The IQ seen atthe supply pins is the sum of the two op amps’ IQ; thetypical value for the IQ of the MCP635 will be 2 µA,2.5 mA or 5 mA when there are 0, 1 or 2 amplifiersenabled, respectively.

The MCP639 is a quad amplifier with two CS pins; CSBcontrols op amp B and CSD controls op amp D.

4.5 Power SupplyWith this family of operational amplifiers, the PowerSupply pin (VDD for single supply) should have a localbypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mmfor good high-frequency performance. Surface mount,multilayer ceramic capacitors, or their equivalent,should be used.

These op amps require a bulk capacitor (i.e., 2.2 µF orlarger) within 50 mm to provide large, slow currents.Tantalum capacitors, or their equivalent, may be a goodchoice. This bulk capacitor can be shared with othernearby analog parts as long as crosstalk through thesupplies does not prove to be a problem.

1.E+02

1.E+03

1.E+04

1.E+05

1 10 100Noise Gain; GN (V/V)

Max

imum

Rec

omm

ende

d R

F(Ω

)

GN > +1 V/V100

10k

100k

1k

CG = 10 pFCG = 32 pF

CG = 100 pFCG = 320 pF

CG = 1 nF

We need:

Given:

GN1 1RFRG-------+=

GN2 1CGCF-------+=

fF1

2RFCF---------------------=

fZ fFGN1GN2---------- =

fF fGBWP2GN2---------------, GN1 GN2

fF fGBWP4GN1---------------, GN1 GN2


MCP631/2/3/4/5/9

4.6 High-Speed PCB LayoutThese op amps are fast enough that a little extra carein the printed circuit board (PCB) layout can make asignificant difference in performance. Good PCB layouttechniques will help achieve the performance shown inthe specifications and typical performance curves; itwill also help minimize electromagnetic compatibility(EMC) issues.

Use a solid ground plane. Connect the bypass localcapacitor(s) to this plane with minimal length traces.This cuts down inductive and capacitive crosstalk.

Separate digital from analog, low-speed fromhigh-speed, and low-power from high-power. This willreduce interference.

Keep sensitive traces short and straight. Separatethem from interfering components and traces. This isespecially important for high-frequency (low rise time)signals.

Sometimes, it helps to place guard traces next to victimtraces. They should be on both sides of the victim traceand as close as possible. Connect guard traces toground plane at both ends and in the middle for longtraces.

Use coax cables, or low-inductance wiring, to routesignal and power to and from the PCB. Mutual andself-inductance of power wires is often a cause ofcrosstalk and unusual behavior.

4.7 Typical Applications

4.7.1 POWER DRIVER WITH HIGH GAINFigure 4-10 shows a power driver with high gain(1 + R2/R1). The short-circuit current of theMCP631/2/3/4/5/9 op amps makes it possible to drivesignificant loads. The calibrated input offset voltagesupports accurate response at high gains. R3 shouldbe small and equal to R1||R2 in order to minimize thebias current induced offset.

FIGURE 4-10: Power Driver.

4.7.2 OPTICAL DETECTOR AMPLIFIERFigure 4-11 shows a transimpedance amplifier, usingthe MCP63X op amp, in a photo detector circuit. Thephoto detector is a capacitive current source. RFprovides enough gain to produce 10 mV at VOUT. CFstabilizes the gain and limits the transimpedancebandwidth to about 1.1 MHz. The parasitic capacitanceof RF (e.g., 0.2 pF for a 0805 SMD) acts in parallel withCF.

FIGURE 4-11: Transimpedance Amplifier for an Optical Detector.

4.7.3 H-BRIDGE DRIVERFigure 4-12 shows the MCP632 dual op amp used asa H-bridge driver. The load could be a speaker or a DCmotor.

FIGURE 4-12: H-Bridge Driver.This circuit automatically makes the noise gains (GN)equal when the gains are set properly, so that thefrequency responses match well (in magnitude and inphase). Equation 4-7 shows how to calculate RGT andRGB so that both op amps have the same DC gains;GDM needs to be selected first.

R1 R2

VIN

VDD/2 VOUT

R3 RLMCP63X

-

+

PhotoDetector

CD

CF

RF

VDD/2

30 pF

100 k

1.5 pF

ID100 nA

VOUT

MCP632

-

+

RFRF

VIN

VOT

RFRGBVOB

VDD/2

RGTRL

½ MCP633

½ MCP633

+

-

-

+


MCP631/2/3/4/5/9

EQUATION 4-7:

Equation 4-8 gives the resulting Common-Mode andDifferential mode output voltages.

EQUATION 4-8:

GDMVOT VOB–

VINVDD

2-----------–-------------------------- 1 V/V

RGTRF

GDM2------------ 1–

---------------------=

RGBRF

GDM2------------

------------=

VOT V+ OB2---------------------------

VDD2-----------=

VOT V– OB GDM VINVDD

2-----------– =


MCP631/2/3/4/5/9

5.0 DESIGN AIDSMicrochip provides the basic design aids needed forthe MCP631/2/3/4/5/9 family of op amps.

5.1 SPICE Macro ModelThe latest SPICE macro model for theMCP631/2/3/4/5/9 op amps is available on theMicrochip web site at www.microchip.com. This modelis intended to be an initial design tool that works well inthe linear region of operation over the temperaturerange of the op amp. See the model file for informationon its capabilities.

Bench testing is a very important part of any design andcannot be replaced with simulations. Also, simulationresults using this macro model need to be validated bycomparing them to the data sheet specifications andcharacteristic curves.

5.2 FilterLab® SoftwareMicrochip’s FilterLab® software is an innovativesoftware tool that simplifies analog active filter (usingop amps) design. Available at no cost from theMicrochip web site at www.microchip.com/filterlab, theFilterLab design tool provides full schematic diagramsof the filter circuit with component values. It alsooutputs the filter circuit in SPICE format, which can beused with the macro model to simulate actual filterperformance.

5.3 Microchip Advanced Part Selector (MAPS)

MAPS is a software tool that helps efficiently identifyMicrochip devices that fit a particular designrequirement. Available at no cost from the Microchipweb site at www.microchip.com/maps, the MAPS is anoverall selection tool for Microchip’s product portfoliothat includes Analog, Memory, MCUs and DSCs. Usingthis tool, a filter can be defined to sort features for aparametric search of devices and export side-by-sidetechnical comparison reports. Helpful links are alsoprovided for data sheets, purchase and sampling ofMicrochip parts.

5.4 Analog Demonstration and Evaluation Boards

Microchip offers a broad spectrum of analogdemonstration and evaluation boards that aredesigned to help customers achieve faster time tomarket. For a complete listing of these boards and theircorresponding user’s guides and technical information,visit the Microchip web site atwww.microchip.com/analog tools.

Some boards that are especially useful are:

• MCP6XXX Amplifier Evaluation Board 1,part number: MCP6XXXEV-AMP1




• Active Filter Demo Board Kit,part number: MCP6XXXDM-FLTR

• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, part number: SOIC8EV

5.5 Application NotesThe following Microchip Analog Design Note andApplication Notes are available on the Microchip website at www.microchip.com/appnotes and arerecommended as supplemental reference resources.

• ADN003: “Select the Right Operational Amplifier for your Filtering Circuits”, DS21821

• AN722: “Operational Amplifier Topologies and DC Specifications”, DS00722

• AN723: “Operational Amplifier AC Specifications and Applications”, DS00723

• AN884: “Driving Capacitive Loads With Op Amps”, DS00884

• AN990: “Analog Sensor Conditioning Circuits – An Overview”, DS00990

• AN1228: “Op Amp Precision Design: Random Noise”, DS01228

Some of these application notes, and others, are listedin the “Signal Chain Design Guide”, DS21825.


www.microchip.comwww.microchip.comwww.microchip.com/filterlabwww.microchip.com/filterlabwww.microchip.com/filterlabwww.micro chip.com/analog toolswww.micro chip.com/analog toolswww.microchip.com/mapswww.microchip.com/mapswww.microchip. com/appnoteswww.microchip. com/appnotes

MCP631/2/3/4/5/9

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

XXNN

XXNN

Legend: XX...X Customer-specific informationY Year code (last digit of calendar year)YY Year code (last 2 digits of calendar year)WW Week code (week of January 1 is week ‘01’)NNN Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn)* This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line, thus limiting the number of availablecharacters for customer-specific information.

3e

3e

5-Lead SOT-23 (MCP631) Example

YV25

6-Lead SOT-23 (MCP633) Example

JC25

8-Lead TDFN (2x3x0.75 mm) (MCP631) Example

ABK42525

8-Lead DFN (3x3x0.9 mm) (MCP632) Example

DABM1425256

Device Code

MCP632T-E/MF DABMNote 1: Applies to 8-lead 3x3 DFN


MCP631/2/3/4/5/9

NNN

8-Lead SOIC (3.90 mm) (MCP631, MCP632) Example

MCP631ESN^^1425

2563e

10-Lead DFN (3x3x0.9 mm) (MCP635) Example

Device Code

MCP635T-E/MF BAFBNote 1: Applies to 10-lead 3x3 DFN

BAFB1425256

10-Lead MSOP (3x3 mm) (MCP635) Example

665EUN425256




3e

3e


MCP631/2/3/4/5/9

14-Lead SOIC (3.90 mm) (MCP634) Example

MCP634E/SL^^

14252563e

14-Lead TSSOP (4.4 mm) (MCP634) Example

YYWWNNN

XXXXXXXX 634E/ST1425256

16-Lead QFN (4x4x0.9 mm) (MCP639) Example

PIN 1 PIN 1 639E/ML^^

14252563e




3e

3e


MCP631/2/3/4/5/9

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MCP631/2/3/4/5/9

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging


MCP631/2/3/4/5/9

6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]

Notes:1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.2. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.


Units MILLIMETERSDimension Limits MIN NOM MAX

Number of Pins N 6Pitch e 0.95 BSCOutside Lead Pitch e1 1.90 BSCOverall Height A 0.90 – 1.45Molded Package Thickness A2 0.89 – 1.30Standoff A1 0.00 – 0.15Overall Width E 2.20 – 3.20Molded Package Width E1 1.30 – 1.80Overall Length D 2.70 – 3.10Foot Length L 0.10 – 0.60Footprint L1 0.35 – 0.80Foot Angle 0° – 30°Lead Thickness c 0.08 – 0.26Lead Width b 0.20 – 0.51

b

E

4N

E1

PIN 1 ID BYLASER MARK

D

1 2 3

e

e1

A

A1

A2 c

LL1

φ

Microchip Technology Drawing C04-028B


MCP631/2/3/4/5/9

6-Lead Plastic Small Outline Transistor (CHY) [SOT-23]



MCP631/2/3/4/5/9



MCP631/2/3/4/5/9

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UN


MCP631/2/3/4/5/9

10-Lead Plastic Micro Small Outline Package (UN) [MSOP]



MCP631/2/3/4/5/9



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MCP631/2/3/4/5/9

APPENDIX A: REVISION HISTORY

Revision C (July 2014)The following is the list of modifications:

1. Updated the Features: list.2. Added the High Gain-Bandwidth Op Amp

Portfolio table in the Features: section.3. Updated Figures 4-6 and 4-11.4. Updated Section 6.0 “Packaging

Information” and Section 6.1 “PackageMarking Information”.

5. Minor typographical changes.

Revision B (November 2011)The following is the list of modifications:

1. Added the MCP634 and MCP639 amplifiers tothe product family and the related informationthroughout the document.

2. Added the 2x3 TDFN (8L), SOT23 (5L) packageoption for MCP631, SOT23 (6L) package optionfor MCP633, 4x4 QFN (16L) package option forMCP639, SOIC and TSSOP (14L) packageoptions for MCP634 and the related informationthroughout the document. Updated packagetypes drawing with pin designation for each newpackage.

3. Updated the Temperature Specifications table toshow the temperature specifications for newpackages.

4. Updated Table 3-1 to show all the pin functions.5. Updated Section 6.0 “Packaging Informa-

tion” with markings for the new additions.Added the corresponding SOT23 (5L), SOT23(6L), TDFN (8L), SOIC, TSSOP (14L), and 4x4QFN (16L) package options and related infor-mation.

6. Updated table description and examples in theProduct Identification System section.

Revision A (August 2009)• Original Release of this Document.

MCP631/2/3/4/5/9


PRODUCT IDENTIFICATION SYSTEMTo order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. -X /XX

PackageTemperatureRange

Device

Device: MCP631 Single Op Amp

MCP631T Single Op Amp (Tape and Reel)(SOIC, SOT-23, TDFN)

MCP632 Dual Op AmpMCP632T Dual Op Amp (Tape and Reel)

(DFN and SOIC)MCP633 Single Op Amp with CSMCP633T Single Op Amp with CS (Tape and Reel)

(SOIC, SOT-23)MCP634 Quad Op AmpMCP634T Quad Op Amp (Tape and Reel)

(TSSOP and SOIC)MCP635 Dual Op Amp with CSMCP635T Dual Op Amp with CS (Tape and Reel)

(DFN and MSOP)MCP639 Quad Op AmpMCP639T Quad Op Amp (Tape and Reel)

(QFN)

Temperature Range:

E = -40°C to +125°C

Package: OT = Plastic Small Outline (SOT-23), 5-leadCHY = Plastic Small Outline (SOT-23), 6-leadMNY= Plastic Dual Flat, No Lead (2x3 TDFN), 8-leadMF = Plastic Dual Flat, No Lead (3×3 DFN),

8-lead, 10-leadSN = Plastic Small Outline (3.90 mm), 8-leadUN = Plastic Micro Small Outline (MSOP), 10-leadSL = Plastic Small Outline, Narrow, (3.90 mm SOIC),

14-leadST = Plastic Thin Shrink Small Outline, (4.4 mm TSSOP),

14-leadML = Plastic Quad Flat, No Lead Package (4x4 QFN),

(4x4x0.9 mm), 16-lead

Examples:a) MCP631T-E/OT: Tape and Reel

Extended temperature, 5LD SOT-23 package

b) MCP631T-E/MNY:Tape and ReelExtended temperature,8LD TDFN package

c) MCP631T-E/SN: Tape and ReelExtended temperature,8LD SOIC package

d) MCP632T-E/MF: Tape and ReelExtended temperature,8LD DFN package

e) MCP632T-E/SN: Tape and ReelExtended temperature,8LD SOIC package

f) MCP633T-E/SN: Tape and ReelExtended temperature, 8LD SOIC package

g) MCP633T-E/CHY: Tape and ReelExtended temperature,6LD SOT package

h) MCP634T-E/SL: Tape and ReelExtended temperature,14LD SOIC package

i) MCP634T-E/ST: Tape and ReelExtended temperature,14LD TSSOP package

j) MCP635T-E/MF: Tape and ReelExtended temperature,10LD DFN package

k) MCP635T-E/UN: Tape and ReelExtended temperature,10LD MSOP package

l) MCP639T-E/ML: Tape and ReelExtended temperature, 16LD QFN package.

Note the following details of the code protection feature on Microchip devices:• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of ourproducts. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such actsallow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding deviceapplications and the like is provided only for your convenienceand may be superseded by updates. It is your responsibility toensure that your application meets with your specifications.MICROCHIP MAKES NO REPRESENTATIONS ORWARRANTIES OF ANY KIND WHETHER EXPRESS ORIMPLIED, WRITTEN OR ORAL, STATUTORY OROTHERWISE, RELATED TO THE INFORMATION,INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY, PERFORMANCE, MERCHANTABILITY ORFITNESS FOR PURPOSE. Microchip disclaims all liabilityarising from this information and its use. Use of Microchipdevices in life support and/or safety applications is entirely atthe buyer’s risk, and the buyer agrees to defend, indemnify andhold harmless Microchip from any and all damages, claims,suits, or expenses resulting from such use. No licenses areconveyed, implicitly or otherwise, under any Microchipintellectual property rights.

2009-2014 Microchip Technology Inc.

QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV

== ISO/TS 16949 ==

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

The Embedded Control Solutions Company and mTouch are registered trademarks of Microchip Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet, KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.

Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries.

GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their respective companies.

© 2009-2014, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.

ISBN: 978-1-63276-382-2

Microchip received ISO/TS-16949:2009 certification for its worldwide

DS20002197C-page 59

headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.


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24 MHz, 2.5 mA Rail-to-Rail Output (RRO) Op AmpsFeatures:Typical Applications:Design Aids:Description:Typical Application CircuitHigh Gain-Bandwidth Op Amp PortfolioPackage Types1.0 Electrical Characteristics1.1 Absolute Maximum Ratings †1.2 SpecificationsDC Electrial SpecificationsAC Electrical SpecificationsDigital Electrical SpecificationsTemperature Specifications

1.3 Timing DiagramFIGURE 1-1: Timing Diagram.

1.4 Test CircuitsFIGURE 1-2: AC and DC Test Circuit for Most Specifications.

2.0 Typical Performance Curves2.1 DC Signal InputsFIGURE 2-1: Input Offset Voltage.FIGURE 2-2: Input Offset Voltage Drift.FIGURE 2-3: Input Offset Voltage vs. Power Supply Voltage with VCM = 0V.FIGURE 2-4: Input Offset Voltage vs. Output Voltage.FIGURE 2-5: Low-Input Common-Mode Voltage Headroom vs. Ambient Temperature.FIGURE 2-6: High-Input Common-Mode Voltage Headroom vs. Ambient Temperature.FIGURE 2-7: Input Offset Voltage vs. Common-Mode Voltage with VDD = 2.5V.FIGURE 2-8: Input Offset Voltage vs. Common-Mode Voltage with VDD = 5.5V.FIGURE 2-9: CMRR and PSRR vs. Ambient Temperature.FIGURE 2-10: DC Open-Loop Gain vs. Ambient Temperature.FIGURE 2-11: DC Open-Loop Gain vs. Load Resistance.FIGURE 2-12: Input Bias and Offset Currents vs. Ambient Temperature with VDD = 5.5V.FIGURE 2-13: Input Bias Current vs. Input Voltage (below VSS).FIGURE 2-14: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +85°C.FIGURE 2-15: Input Bias and Offset Currents vs. Common-Mode Input Voltage with TA = +125°C.

2.2 Other DC Voltages and CurrentsFIGURE 2-16: Output Voltage Headroom vs. Output Current.FIGURE 2-17: Output Voltage Headroom vs. Ambient Temperature.FIGURE 2-18: Output Short-Circuit Current vs. Power Supply Voltage.FIGURE 2-19: Supply Current vs. Power Supply Voltage.FIGURE 2-20: Supply Current vs. Common-Mode Input Voltage.

2.3 Frequency ResponseFIGURE 2-21: CMRR and PSRR vs. Frequency.FIGURE 2-22: Open-Loop Gain vs. Frequency.FIGURE 2-23: Gain-Bandwidth Product and Phase Margin vs. Ambient Temperature.FIGURE 2-24: Gain-Bandwidth Product and Phase Margin vs. Common-Mode Input Voltage.FIGURE 2-25: Gain-Bandwidth Product and Phase Margin vs. Output Voltage.FIGURE 2-26: Closed-Loop Output Impedance vs. Frequency.FIGURE 2-27: Gain Peaking vs. Normalized Capacitive Load.FIGURE 2-28: Channel-to-Channel Separation vs. Frequency.

2.4 Noise and DistortionFIGURE 2-29: Input Noise Voltage Density vs. Frequency.FIGURE 2-30: Input Noise Voltage Density vs. Input Common-Mode Voltage with f = 100 Hz.FIGURE 2-31: Input Noise Voltage Density vs. Input Common-Mode Voltage with f = 1 MHz.FIGURE 2-32: Input Noise vs. Time with 0.1 Hz Filter.FIGURE 2-33: THD+N vs. Frequency.

2.5 Time ResponseFIGURE 2-34: Non-Inverting Small Signal Step Response.FIGURE 2-35: Non-Inverting Large Signal Step Response.FIGURE 2-36: Inverting Small Signal Step Response.FIGURE 2-37: Inverting Large Signal Step Response.FIGURE 2-38: The MCP631/2/3/4/5/9 Family Shows No Input Phase Reversal With Overdrive.FIGURE 2-39: Slew Rate vs. Ambient Temperature.FIGURE 2-40: Maximum Output Voltage Swing vs. Frequency.

2.6 Chip Select ResponseFIGURE 2-41: CS Current vs. Power Supply Voltage.FIGURE 2-42: CS and Output Voltages vs. Time with VDD = 2.5V.FIGURE 2-43: CS and Output Voltages vs. Time with VDD = 5.5V.FIGURE 2-44: CS Hysteresis vs. Ambient Temperature.FIGURE 2-45: CS Turn-On Time vs. Ambient Temperature.FIGURE 2-46: CS Pull-Down Resistor (RPD) vs. Ambient Temperature.FIGURE 2-47: Quiescent Current in Shutdown vs. Power Supply Voltage.FIGURE 2-48: Output Leakage Current vs. Output Voltage.

3.0 Pin DescriptionsTABLE 3-1: Pin Function Table3.1 Analog Outputs3.2 Analog Inputs3.3 Power Supply Pins3.4 Chip Select Digital Input (CS)3.5 Exposed Thermal Pad (EP)

4.0 Applications4.1 InputFIGURE 4-1: Simplified Analog Input ESD Structures.FIGURE 4-2: Protecting the Analog Inputs.FIGURE 4-3: Unity-Gain Voltage Limitations for Linear Operation.

4.2 Rail-to-Rail OutputFIGURE 4-4: Output Current.FIGURE 4-5: Diagram for Power Calculations.

4.3 Improving StabilityFIGURE 4-6: Output Resistor, RISO, Stabilizes Large Capacitive Loads.FIGURE 4-7: Recommended RISO Values for Capacitive Loads.FIGURE 4-8: Amplifier with Parasitic Capacitance.FIGURE 4-9: Maximum Recommended RF vs. Gain.

4.4 MCP633, MCP635 and MCP639 Chip Select4.5 Power Supply4.6 High-Speed PCB Layout4.7 Typical ApplicationsFIGURE 4-10: Power Driver.FIGURE 4-11: Transimpedance Amplifier for an Optical Detector.FIGURE 4-12: H-Bridge Driver.

5.0 Design Aids5.1 SPICE Macro Model5.2 FilterLab® Software5.3 Microchip Advanced Part Selector (MAPS)5.4 Analog Demonstration and Evaluation Boards5.5 Application Notes

6.0 Packaging Information6.1 Package Marking Information

Appendix A: Revision HistoryProduct Identification SystemTrademarksWorldwide Sales and Service

MCP631/2/3/4/5/9 Data Sheet · 2014. 8. 7. · 2009-2014 Microchip Technology Inc. DS20002197C-page...

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Transcript of MCP631/2/3/4/5/9 Data Sheet · 2014. 8. 7. · 2009-2014 Microchip Technology Inc. DS20002197C-page...