Materials For Future Memories - SRC · Materials For Future Memories Prof. Tseng, Tseung-Yuen...
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Materials For Future Memories
Prof. Tseng, Tseung-Yuen
2009/10/202009/10/20
Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University,
Prof. Tseng, Tseung-Yuen
Hsinchu 300, Taiwan
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Outline
Emerging memories introduction
Materials for Ferroelectric random access memory Materials for Ferroelectric random access memory
- Capacitor-type FRAM
- Ferroelectric gate FRAM
Materials for Resistive random access memory
Summary
Prof. Tseng, Tseung-Yuen
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IntroductionAn ideal nonvolatile memoryAn ideal nonvolatile memory
embedded memory
• An ideal nonvolatile memory– Low operation voltage, low power consumption, high endurance, long
retention time, nondestructive readout, simple structure, low cost, etcf• Possible candidates of next-generation nonvolatile memory
– Ferroelectric random access memory (FeRAM)– Magnetroresistive random access memory (MRAM)
Prof. Tseng, Tseung-YuenProf. Tseng, Tseung-Yuen
– Phase change random access memory (PCM)– Resistive random access memory (RRAM)
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Comparisons
2002 IEDM Zhuang et.al. Sharp
Prof. Tseng, Tseung-Yuen
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Typical or estimated parameter values for a variety of memory technology
Chapter 5, Handbook of Nanoceramics and Their Based Nanodevices, Vol.4,2009
Prof. Tseng, Tseung-Yuen
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Prof. Tseng, Tseung-Yuen
IEEE Spectrum, March 2003,pp.49-54
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Ferroelectric random (F RAM)access memory (FeRAM)
Prof. Tseng, Tseung-Yuen
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Materials for FRAM
FRAM
PbZrTiO3 SrBi Ta O3
(PZT)SrBi2 Ta2O3
(SBT)
Larger PrSmaller Prg r
Fatigue-freeWith oxideElectrodes
Low deposition temp
Fatigue-freeWith Pt
ElectrodesHigh deposition temp
Prof. Tseng, Tseung-Yuen
Low deposition temp g p p
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Crystal Structure SrBi2Ta2O9 or SrBi2Nb2O9
Pb(Zr1-xTix)O3(PZT)
: A
: B
: O
Perovskite structure
Prof. Tseng, Tseung-Yuen
Layered PerovskiteSmith, Ferroelectrics,2009
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Capacitor type ferroelectric random access memory(FeRAMs)
Prof. Tseng, Tseung-Yuen
Mikolajick et.al., Microelectronics Reliability,41(2007)947.
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32 Mb Samsung PZT FeRAM
J F Scott Science Vol 315 954 Feb 2007
Prof. Tseng, Tseung-Yuen
J.F. Scott, Science, Vol.315,954,Feb. 2007
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SEM image of embedded FRAM(64 Mb 1T/1C TI)FRAM(64 Mb 1T/1C, TI)
Cross-section schematic diagram(IEEE J. Solid St t Ci it A il 2004)State Circuits, April 2004)
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Prof. Tseng, Tseung-YuenIEEE J. Solid State Circuits, April 2004
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64 Mb, 1T1C FRAM, Samsung
Prof. Tseng, Tseung-Yuen
2006 IEDM Samsung
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EnduranceEndurance
R t tiRetention
Prof. Tseng, Tseung-Yuen
2006 IEDM Samsung
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Issues for materials development and IntegrationIssues for materials development and Integration
J.Electrochem.Soc.,151, 2004
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Forming gas annealing effect
Prof. Tseng, Tseung-Yuen
Han and Ma, Appl. Phys. Lett.,71(9),1267,1997
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Issue for FeRAMs
Limiting factor for scaling: minimum 2D capacitor area
Solutions3D ferroelectric capacitor structuresConformal coverge of 3-D electrode with ferroelectric has to be uniform in thickness but should also exhibit uniform properties
Ferroelectric materials with a higher Pr
Prof. Tseng, Tseung-Yuen
Ishiwara et.al., MRS Bull.,825,2004
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PZT with high PrPZT/SrRuO3/Ru/SiO2/Si
Prof. Tseng, Tseung-Yuen
Wang et.al. NCTU,Appl.Phys.Lett.,80(20),3790,2002
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Ferroelectric Gate Field-Effect Transistors(FETs)Ferroelectric is in direct contact with the drain-source channel of the transistorresistive storage readout device(non-destructive)
MFIS FETs MFMIS FETs
H I hi t l MRS B ll 823 2004
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H. Ishiwara et.al.,MRS Bull.,823,2004
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Operation principle of Ferroelectric Gate FET
Prof. Tseng, Tseung-Yuen
Lue & Tseng. NCTU
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Sh t hi bl t ti tiShort achieveable retention time
H. Ishiwara et.al.,MRS Bull.,823,2004
Prof. Tseng, Tseung-Yuen
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Issues for ferroelectric gate FETsFerroelectric Si interface reaction during fabrication leading to create defects at the interface.
Interface traps can capture and or emit charge carriers and affect the operation of the device.
S l tiSolutionsInsulating buffer layers inserted between ferroelectric film and Si.
The insulating layer must fulfill the following requirements:
•Form a good interface with silicon•Form a good interface with silicon.
•Have a strong barrier property against interdiffusion.
•Have a high dielectric constant to realize low operating voltage and long retention time.
•Keep low leakage currents through the device•Keep low leakage currents through the device.
•Enhance the crystallization of the ferroelectric film.
•Remain smoothness during the fabrication process.
•Maintain stable at processing temperatureMaintain stable at processing temperature.
Materials used as the buffer layer
SiO2 Si3N4 SiON CeO2 ZrO2 MgO Al2O3 SrTiO3 Y2O3 PrOx LaAlO3
Prof. Tseng, Tseung-Yuen
La2O3 Ta2O5 HfO2 SrTa2O6 YMnO3 Bi2SiO5
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R i ti dResistive random access memory (RRAM)y ( )
Prof. Tseng, Tseung-Yuen
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Bipolar resistive switching
10-2
On-state currentIoff , Voff
4
10-3On processOff process
10-5
10-4
nt (A
)
10-6
10
Cur
re
Off-state current
Ion , Von
10-7
Off state current
Prof. Tseng, Tseung-Yuen
-1.5 -1.0 -0.5 0.0 0.5 1.010-8
Voltage (V)
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RRAM switching mechanismsRRAM switching mechanisms Filamentary Interface controlled
Solid-state electrolyte
M. Kawasaki et al., SSDM (2006)
Phase change Solid-state electrolyte
Prof. Tseng, Tseung-Yuen
S.Lai et al., IEDM (2001) M. Kund et al., IEDM (2005)
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Formation/Rupture of conduction pathEBIC
2001 JAP Rossel et al IBM
Prof. Tseng, Tseung-YuenProf. Tseng, Tseung-Yuen
2006 EDL Lin et al. NCTU2001 JAP Rossel et al. IBM
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One Diode and One Resistor (1D1R)Structure of RRAM
One Diode and One Resistor (1D1R)• Avoiding the misread problem• Minimum cell size of 4F2
f f f• Diode fabricated in the front-end, and the resistor fabricated in the back-end of CMOS process
2003 IEDM Sezi et al. Sharp
Prof. Tseng, Tseung-YuenProf. Tseng, Tseung-Yuen 2005 IEDM Baek et al. Samsung
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Structure of RRAM
• Minimum cell size of 6F2 (common source)
One transistor and one resistor (1T1R)
• Transistor fabricated in the front-end, and the resistor fabricated in the back-end of CMOS process
2004 IEDM Baek et al. Samsung 2007 VLSI-DT Ho et al. MXIC
Prof. Tseng, Tseung-Yuen29
g
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Materials for RRAM
Prof. Tseng, Tseung-Yuen
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Electrode Materials for RRAM
Zhang & Tseng, NCTUZhang & Tseng, NCTU
Prof. Tseng, Tseung-Yuen
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Factors that influence resistive thin film properties
Processing methods and parameters Film composition and dopant
Crystalline structure Crystalline structure
Microstructure
Surface morphology Surface morphology
Film thickness
Electrode materialsect ode ate a s
Embedded layer
Prof. Tseng, Tseung-Yuen
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Effect of ZrOEffect of ZrO22 processing temperaturesprocessing temperatures
DC sweepOn-state Off-state On/Off
FormingVoltage (V)
current at 0.3V
Current at 0.3V
Ratio Enduranceat 0.3V
number ofmA μA times number of testing cycle
25oC 2.5~4 1.21 33.3 22.8 2200
100oC 4~5 1.95 11.7 110 900
150oC 4~5.5 1.64 5.16 66 4000150 C 4 5.5 1.64 5.16 66 4000
200oC 4~5 1.04 4.53 114 10599
Prof. Tseng, Tseung-Yuen
250oC 4~6 1.55 14.3 96 6100
Tsai et.al., NCTU
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Ti/Z O (200 C)/Pt/Ti/SiO /Si
Amorphous phase
Ti/ZrO2(200oC)/Pt/Ti/SiO2/Si
Prof. Tseng, Tseung-Yuen
Tsai & Tseng, NCTU
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Compositional effect
Ti/Al2O3/PtTi/ZrO2/Pt
Prof. Tseng, Tseung-Yuen
Lin & Tseng, NCTU
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Effect of Crystallinity
Prof. Tseng, Tseung-YuenLiu & Tseng et.al.JPD, 39, 1156,2006
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Doping Effect
Ionic Radius
V5+(0.054 Å)
Zr4+(0.072 Å)
Sr2+(0.118 Å)
Device Structure
Prof. Tseng, Tseung-YuenTipical I-V Characteristics XRD patterns of 500oC deposited films
Lin & Tseng et.al. NCTU
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Forming voltage, turn-on voltage, and resistance ratio increase with increasing vanadium dopingvanadium doping concentration up to 0.2 mol%, but those of 0.2, 0.3 and 0.4 mol% V:SZO films are almost the same.
Prof. Tseng, Tseung-Yuen Lin & Tseng et.al. NCTU
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HRS currents: Carrier conduction in films dominated by F-P emission
))/(
exp(~ , qEqEJ ieffB
Temperature dependence of HRS currents
)exp(kT
EJ
Prof. Tseng, Tseung-Yuen
Lin & Tseng et.al. NCTU
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Carrier transport of LRS followed by Ohmic conduction
LRS currents increased with increasing measured temperature(hopping conduction)
Prof. Tseng, Tseung-Yuen
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Plots of F-P emissions fitting of Barrier height of F-P defectsgHRS currents. By extrapolation of above measurement data to zero electric field, barrier height of F-P defects obtained
Barrier height of F-P defects
Prof. Tseng, Tseung-Yuen
Lin & Tseng et.al. NCTU
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What is F-P defects?
Oxygen vacancies or electronic defects
It is important to identify the effect of vanadium doping on oxygen vacancies occurred in order to obtain better understanding of the effect of vanadium gdoping on the resistive switching characteristics of the devices
Zr site in the lattice substituted by high valence cation(V5+) can be expressed as the followings:g
As shown in above Figure, vanadium doped into SZO-based thin films can modulate barrier height of charge carriers which conduction electrons overcome from trapping level(i.e., oxygen vacancies) to conduction band, thereby further affecting resistive switching
Prof. Tseng, Tseung-Yuen
oxygen vacancies) to conduction band, thereby further affecting resistive switching characteristics of the devices.
Lin & Tseng et.al. NCTU
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(a) Below turn-on voltage,it is field-enhanced thermal excitation of t d l t i t th d ti b d i di ti thtrapped electrons into the conduction band, indicating the conduction electrons hopping through the small amount of deep oxygen vacancies in SZO-based thin films.
(b) Above turn-on voltage, the charge carriers(i.e., oxygen vacancies) are ( ) g , g ( , yg )aligned to form conducting filaments connecting TE and BE with the barrier height in the range of 0.10~0.13 eV, leading to the transition from F-P emission to Ohmic conduction, which is so called thermally excited and electron hopping in the SZO based films
Prof. Tseng, Tseung-Yuen
excited and electron hopping in the SZO-based films.
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Top electrode effectResistive Switching of ZrO2Resistive Switching of ZrO2
Work function of Pt, Ni, Ag, Cu, Al, and Ti: 5.65, 5.15, 4.73, 4.7, 4.3, and 4.3 eV, respectively
N l t bi l i ti it hi Non-polar to bipolar resistive switchingWork function effect neglected Oxygen gettering ability dominant
Ti/ZrO /PtTi/ZrO2/Pt
Prof. Tseng, Tseung-YuenLin & Tseng et.al NCTU 2007
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Top-electrode TiBinary metal oxides-ZrO2Binary metal oxides-ZrO2
Uniformity
Less distortion
2007 EDL Li &T t l NCTU
Prof. Tseng, Tseung-YuenProf. Tseng, Tseung-Yuen
2007 EDL Lin&Tseng et al. NCTU
Pulses more than 10000
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Top-electrode TiBinary metal oxides ZrOBinary metal oxides-ZrO2
Interface layer comprises of TiOx and ZrOy characterized by SIMS and TEM,respectively.
Ti TiO TiO TiTi
ZrO2
Ti
ZrO2
TiOx
ZrOyForming
TiOxZrOyTiTiOx and ZrOyR-constantZrO2 R-var
R-con
R-var
Prof. Tseng, Tseung-YuenProf. Tseng, Tseung-Yuen 2007 JAP Lin&Tseng et al. NCTU
PtPt Ptg
process Pt
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Top electrode thickness Nonpolar resistive switchingpEndurance test in 5T devices(inset)
Prof. Tseng, Tseung-Yuen
Wang & Tseng,NCTU,APL,2009
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ZrO thicknessZrO2 thickness
Prof. Tseng, Tseung-YuenWang & Tseng et.al NCTU 2009
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Bipolar RS behaviors of 40T devices Fluctuant ON process
Prof. Tseng, Tseung-YuenWang & Tseng et.al APL 2009
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Conducting filament formation and rupture
Off state Fluctuant on process On state
Prof. Tseng, Tseung-Yuen
Wang & Tseng, NCTU, APL 2009
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P f f f th t t d Z O2 b d d i
Device structure * RON ROFF |VON| |VOFF| RS |PulseON| |PulseOFF Device Reference
Performance of of the current reported ZrO2-based memory devices
Device structure RON ROFF |VON| |VOFF| RS cycles
|PulseON| |PulseOFF|
Device yield
Reference
Ti/ZrO2/Pt 150~2kΩ
10k~100kΩ
~0.9V ~1.4V 10000 6V/50ns 3V/50ns ~100% This work
Pt/ZrOX/p+-Si ~3kΩ 43kΩ ~1.6V ~1.1V 80 6V/100ns 2V/100ns 43% [11-12]
TiN/ZrO2/Pt 300~800Ω
4k~80kΩ 0.7~1.1V
0.5~0.8V
480 1.5V/1μs 2V/1μs N.A. [13]
Au/nc-Au ZrO2/n+-Si ** 5k~166kΩ
9M~83MΩ
2.6~3.5V
1~3V 100 N.A. N.A. 73% [14]
Cr/Au-implanted ZrO2/n+-Si
70~30kΩ
2M~300MΩ
~8V ~2.2V 200 12V/50ns 6V/100ns ~100% [15]
Cu/Cu-doped ZrO2/Pt 100Ω 100MΩ 2.1~3.6V
0.8~1.5V
N.A. N.A. N.A. Higher than that
undoped
[16]
undoped
Cr/Zr+-implanted ZrO2/n+-Si
~4kΩ ~200MΩ ~3.2V ~3.1V N.A. N.A. N.A. Higher than that
unimplanted
[17]
Prof. Tseng, Tseung-YuenTsai & Tseng, NCTU 2009
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Nanocrystals-embedded RRAM
2007 APL W.Guan & S.Longg
• Due to the higher electric field induced around the embedded nanocrystals within ZrO2, it expected that the localized conducting filaments would pass through the nanocrystals by external electric field driving. The modified
Prof. Tseng, Tseung-Yuen
intentional defects are believed to be easily altered and created while applying voltage bias on the memory device.
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Embedded metal
2009 APL Ch t l NTHU
• Enhancement in electric field is in the thickness direction normal to Pt particle.
2009 APL Chnag et.al. NTHU
providing easy path to form a fixed conducting filament in thin films. Therefore, fluctuationof switching parameters could be stabilized by the embedded particles
Prof. Tseng, Tseung-Yuen
stabilized by the embedded particles.
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Embedded Cr layer
Prof. Tseng, Tseung-Yuen2008 EDL Tseng et.al.,NCTU
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SSummary Ferroelectric materials in the gate and complex metal oxides materials are among the new materials being studied for future nonvolatile memory applications.
The high-k materials with high crystallization temperature and low leakage current are a good candidate of buffer insulating layer in MFIS FETs, which foreshadow further retention time improvements of MFIS FETs.
3D ferroelectric capacitor structures, ferroelectric materials with a higher Pr, lowering crystallization temperature of ferroelectric films for avoiding the degradation of underlying transistor during annealing, and forming very thin ferroelectric films for realizing low voltage operation are being studied for fabricating high density ferroelectric memory.
Effects of composition,nonstoichiometry,dopants,crystallization,and thickness p , y, p , y ,of resistive switching films; electrode materials; and embedded nanocrystal and metal on the switching characteristics of RRAMs and their conduction mechanisms are being studied for enhancing their performance and reliability.
Prof. Tseng, Tseung-Yuen
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Thank you for your attention
謝謝您謝謝您
Prof. Tseng, Tseung-Yuen