M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder
description
Transcript of M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder
![Page 1: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/1.jpg)
PAUL SCHERRER INSTITUT
M. FurlanI. JerjenE. Kirk
Ph. LerchA. Zehnder
Cryogenic Detectors Development at PSI
![Page 2: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/2.jpg)
PAUL SCHERRER INSTITUT
PSI Cryo-detector Work
•SIS STJ
• Ta-STJ, Single pixel and strips
• Mn- X-Ray, Optical
•Caloriemeter
• MoAu TES, Mn-X-ray
•SIN STJ
![Page 3: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/3.jpg)
PAUL SCHERRER INSTITUT
SiSi-nitride
Mo/Au
PAUL SCHERRER INSTITUT
Mo/Au Microcalorimeter• Mo/Au-TES• Au Absorber• Si-nitride membrane, “bad” thermal link• Thesis J. Olsen.
![Page 4: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/4.jpg)
PAUL SCHERRER INSTITUT
Ta-Al/AlOx/Al-Ta-Nb produced by E. Kirk
Basic tunneling junction
![Page 5: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/5.jpg)
PAUL SCHERRER INSTITUT
STJ Detector fabrication in cross section
Photoresist etch mask, dry and wet etching to pattern strips …
… and detectors Lift-off mask for SiO2 … … and wiring
![Page 6: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/6.jpg)
PAUL SCHERRER INSTITUT
I-V characteristics
![Page 7: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/7.jpg)
PAUL SCHERRER INSTITUT
Response to red LED
![Page 8: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/8.jpg)
PAUL SCHERRER INSTITUT
![Page 9: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/9.jpg)
PAUL SCHERRER INSTITUT
VUV spectrometer 10 - 30 eV
Ta-STJ
20’000 e/eV@ 300 mK
IR rejection !
![Page 10: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/10.jpg)
PAUL SCHERRER INSTITUT
imaging with diffusion
![Page 11: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/11.jpg)
PAUL SCHERRER INSTITUT
energ
ypositio
n
5.9 keV
6.4 keV
Substrate Phonons
![Page 12: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/12.jpg)
PAUL SCHERRER INSTITUT
1.0
0.8
0.6
0.4
0.2
0.0
Norm
aliz
ed c
ounts
7.06.56.05.55.0
Energy (keV)
Silicon detector, 300K, commercial tunnel junction, 550 mK, PSI calorimeter, 100 mK, PSI
STJ, 500 mK
calorimeter, 100 mK
Si, 300 K
Summary Mn-X-ray results at PSI
![Page 13: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/13.jpg)
PAUL SCHERRER INSTITUT
Kurakados 40series x 20paralle STJ’s, each 50m Diameter
![Page 14: M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder](https://reader036.fdocuments.us/reader036/viewer/2022062519/56814fe1550346895dbda978/html5/thumbnails/14.jpg)
PAUL SCHERRER INSTITUT
Future plans at PSI
• Close SIS-STJ work in 2005
• Thesis I. Jerjen: Sensitivity of Ta-STJ to optical light
• Measure 10-50eV photons
• Collaboration with Kurakado on series-STJ fabrication and testing
• SIN Junction studies
• + S being Absorber, small gap
• + N being Si (degenerated doped).
• ++ Profit from Si technology
• + No magnetic fields
• - no backtunneling
• - low temperature (<100mK)