Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single...

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A. V. Gorbunov and V. B. Timofeev Linear polarization of the luminescence of dipolar exciton Bose condensate Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia IV th International Conference on Spontaneous Coherence in Excitonic Systems 8-12 September 2008, Cambridge, United Kingdom E E

Transcript of Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single...

Page 1: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

A. V. Gorbunov and V. B. Timofeev

Linear polarization of the luminescence of dipolar exciton Bose condensate

Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432, Russia

IVth International Conference on Spontaneous Coherence in Excitonic Systems

8-12 September 2008, Cambridge, United Kingdom

E E

Page 2: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

Solov’ev, Kukushkin et al (2006)Gorbunov, Timofeev (2006)

Wide Single Quantum Well

SQW GaAs/AlGaAs 250Å: no thin interwell barrier layer

→ structural perfection is much higher→ the charge of the system under study can be controlled and the condition of

neutrality can be fulfilled

ID

e - h cloud

F

Double Quantum Well

Spatial separation of electrons and holes → spatially indirect dipolar excitons with large dipole

momentum in the ground state → dipole-dipole repulsion

→ no multiexciton complexes.Reduced electron-hole overlap

→ increased radiative decay time → good opportunity to accumulate such excitons and

cool them.

Lozovik and Yudson (1976), Shevchenko (1976)Fukuzawa et al. (1990), Kash et al. (1992)Butov et al. (1994-2008),Snoke et al. (2002-2008))Rapaport et al. (2003-2008)

But! BEC of 2D excitons can occur under spatial restriction

only → a lateral potential trap is

needed.

d ≥ 102aB

Page 3: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

_ Au/Cr

+

Undoped GaAs substrate

Doped GaAs/AlGaAs SQW (300Å)

GaAs/AlGaAs SQW (250Å)

Photoexcitation

< d ex > = 115 A (F=20 kV/cm)

-20

-10

0

-4 -2 0 2 4

-8

-6

-4

-2

0

r|| (m)

5 mUdc (meV) Fd (kV/cm)

5

x

Ene

rgy

Ring-shaped lateral trap for indirect excitons(along the perimeter of a window in top Schottky gate)

The potential profile of the trap can be described near bottom as:

V(r) = rll2 ,

with force constant ≈ 2.2 meV/m2. Barrier height V ≈ 5 meV>>kT.

Page 4: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

K-space (far field)

Real space

Luminescence spectrum measured with spatial resolution(single quantum well GaAs/AlGaAs 250Å, ø5m window in top Schottky gate)

Spectral slit

Window image

1,514 1,516 1,518 1,52 Energy (eV)

Direct excitonIndirect exciton

-303

x (

m)

Page 5: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

Linear polarization of luminescence at the Bose condensation of dipolar excitons: spatial distribution

<110>

<110

>E

<110>

<110

>

E

EII<110>

E

EII<110>

E

Page 6: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

011

110

Analyzer angleo

Inte

nsity

, (a.

u.)

2500

9000

5750

Linear polarization of luminescence at the Bose condensation of dipolar excitons: angular dependence

Page 7: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

0,5

1,0

0

30

6090

120

150

180

210

240270

300

330

0,5

1,0

Inte

nsity

(nor

m.)

Linear polarization of luminescence at the Bose condensation of dipolar excitons: angular diagrams

Here the estimated polarization degree does not exceed 15-20%. However, the BEC luminescence “sits” on unpolarized background. How to take it into account

correctly? → Spectral measurements

Page 8: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

1,514 1,515 1,516 1,517 1,520 1,521

0 20 40 60 800,2

0,4

0,6

0,8

30W

5W3W

10W

80W

(II)

Inte

nsity

Energy (eV)

(

1.5W

PHe-Ne

T = 1.7 KPTiSp=70W

Power (W)

Linear polarization of luminescence at the Bose condensation of dipolar excitons: spectral measurements

(II)

()_<110>

<110

>

Polarization degree is maximal (~70%) at the condensation threshold. It diminishes gradually with stronger pumping due to the heating-induced

condensate depletion.

Strongly polarized narrow line of indirect exciton(EFWHM ≈ 300 eV) appears with pumping at the blue edge of weakly polarized background.

Indirect exciton

Direct exciton

Direct exciton line remains unpolarized.

Page 9: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

The heavy hole dipolar exciton is fourfold degenerate:

m = Se,Z +Jh,Z = ±1, ±2

H = aZJh,Z x Se,Z + Σ biJ 3h,i x Se,i

The states with m = ±1 and m = ±2 are split by :

Eex = 1.5 aZ + 3.375 bZ

An asymmetry of the confinement potential leads to the anisotropic e-h exchange (bx≠by). The spin states are linear

combinations of the m = ± 1 excitons:

|L1/2> = 1/√2 (α|+1> ± β|-1>), α/β ≈ 1

The mixing results finally in a linear polarization of dipolar exciton emission.

We suppose that the observed phenomenon is an additional evidence of Bose-Einstein condensation of dipolar excitons.

The energy splitting between two orthogonally polarized components is extremely small: Δexc ≤ 50μeV << kBT → polarization should not be observed in normal situation. However, at Bose condensation the lowest split state is preferentially occupied → Linear polarization appears.

Anisotropic e-h exchange as a reason of linear polarization

_<110>

<110>

()

(II)

The directions of split components are related to the random potential fluctuations, i.e. to crystallography.

Page 10: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

50W10W5W 250W0.5W

Power dependence

PHe-Ne

Patterning of dipolar exciton luminescence both in real and k-space:optical Fourier-transform

0-15 15φ, degree

k, 104 cm-10 1 2-1-2

5 m

Indirectexciton

DirectExciton

Real space k-space

J.Keeling, L.S.Levitov, P.B.LittlewoodPhys.Rev.Lett. 92, 176402 (2004)

This collective state of dipolar excitons is spatially

coherent.

The luminescent ring pattern with equidistant

bright spots is described by a common wave function.

BEC emission concentrates close to the normal within

angular cone: Δφ ≈ λ/D ≈ 0.16 ≈ 9o.

Page 11: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

“Two-spot” interference: overcoming edge diffraction In

tens

ity

Distance

Inte

nsity

Distance

Inte

nsity

Distance

Inte

nsity

Distance

+ =

_

0,00 0,05 0,10 0,15 0,20 0,25 0,30

Spatial frequency

Ampl

itude Fourier-transform

Left spot only Right spot only Total diffraction effect

0

Inte

nsity

Distance

Resultant interference signal

Page 12: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

0 1 2 3 4Time, ns

laser

Time-resolved interference(combined excitation: pulsed above-barrier (100ps/10MHz) + CW in-barrier)

Hole ø5 m Interferencepattern

Streak camera frame

Page 13: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

r

4.25 ns

3.87 ns

3.48 ns3.09 ns

2.71 ns

2.32 ns

1.93 ns1.55 ns

1.16 ns0.77 ns

0.39 ns

0

-0.39 ns

Time delay

t

Time-resolved interference (2)

Page 14: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

0 1 2 3 4 5

Inte

nsity

, a.u

.

Time, ns

Time-resolved interference (3):Fourier-spectra

Laser

Dipolarexciton

luminescence Spatial frequency

The interference appears with some delay and disappears before luminescence totally

vanishes → coherence does not live

permanently – it exists only when a critical density is

exceeded.

Page 15: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

• The photoluminescence of dipolar exciton Bose condensate formed by spatially

indirect excitons in GaAs/AlGaAs single quantum well at the accumulation in a ring-

shaped lateral potential trap is linearly polarized along the direction <110> in

quantum well plane {001}.

• The luminescence is unpolarized below condensation threshold on pumping. The

polarization degree is maximal at the threshold (~70%). decreases gradually with

photoexcitation intensity due to the heating-induced condensate depletion.

• Linear polarization of exciton condensate may result from anisotropic electron-hole

exchange interaction connected with in-plane anisotropy of holding potential.

• The phenomenon is an additional evidence of the Bose-Einstein condensation of

dipolar excitons in a ring-shaped lateral trap.•

Summary

Page 16: Linear polarization of the luminescence of dipolar ... · Gorbunov, Timofeev(2006) Wide Single Quantum Well SQWGaAs/AlGaAs250Å: no thin interwellbarrier layer →structural perfectionis

We are deeply grateful to S. V. Iordanskii, I. V. Kukushkin, V. D. Kulakovskii,

and G. M. Eliashbergfor valuable and stimulating discussions,

and to S. V. Dubonos

for e-beam lithography of structures.

Acknowledgements