Hardware Documentation

Linear Hall-Effect Sensor IC HAL® 401

Edition Dec. 8, 2008DSH000018_002EN

Data Sheet

HAL401 DATA SHEET

2 Micronas

Copyright, Warranty, and Limitation of Liability

The information and data contained in this document arebelieved to be accurate and reliable. The software andproprietary information contained therein may be pro-tected by copyright, patent, trademark and/or other intel-lectual property rights of Micronas. All rights not ex-pressly granted remain reserved by Micronas.

Micronas assumes no liability for errors and gives nowarranty representation or guarantee regarding the suit-ability of its products for any particular purpose due tothese specifications.

By this publication, Micronas does not assume responsi-bility for patent infringements or other rights of third par-ties which may result from its use. Commercial condi-tions, product availability and delivery are exclusivelysubject to the respective order confirmation.

Any information and data which may be provided in thedocument can and do vary in different applications, andactual performance may vary over time.

All operating parameters must be validated for each cus-tomer application by customers technical experts. Anynew issue of this document invalidates previous issues.Micronas reserves the right to review this document andto make changes to the documents content at any timewithout obligation to notify any person or entity of suchrevision or changes. For further advice please contactus directly.

Do not use our products in life-supporting systems, avi-ation and aerospace applications! Unless explicitlyagreed to otherwise in writing between the parties, Mi-cronas products are not designed, intended or autho-rized for use as components in systems intended for sur-gical implants into the body, or other applicationsintended to support or sustain life, or for any other ap-plication in which the failure of the product could createa situation where personal injury or death could occur.

No part of this publication may be reproduced, photoco-pied, stored on a retrieval system or transmitted withoutthe express written consent of Micronas.

Micronas Trademarks

– HAL

Micronas Patents

Choppered Offset Compensation protected by Micronaspatents no. US5260614A, US5406202A, EP052523B1,and EP0548391B1.

Third-Party Trademarks

All other brand and product names or company namesmay be trademarks of their respective companies.

HAL401DATA SHEET

3Micronas

Contents

Page Section Title

4 1. Introduction4 1.1. Features4 1.2. Marking Code4 1.3. Operating Junction Temperature Range4 1.4. Hall Sensor Package Codes5 1.5. Solderability and Welding

6 2. Functional Description

7 3. Specifications7 3.1. Outline Dimensions8 3.2. Dimensions of Sensitive Area8 3.3. Positions of Sensitive Area8 3.4. Absolute Maximum Ratings8 3.4.1. Storage and Shelf Life9 3.5. Recommended Operating Conditions10 3.6. Characteristics

18 4. Application Notes18 4.1. Ambient Temperature18 4.2. EMC and ESD18 4.3. Application Circuit

20 5. Data Sheet History

HAL401 DATA SHEET

4 Micronas

Linear Hall Effect Sensor ICin CMOS technology

Release Notes: Revision bars indicate significantchanges to the previous edition.

1. Introduction

The HAL401 is a Linear Hall Effect Sensors produced inCMOS technology. The sensor includes a temperature-compensated Hall plate with choppered offset com-pensation, two linear output stages, and protection de-vices (see Fig. 2–1).

The output voltage is proportional to the magnetic fluxdensity through the hall plate. The choppered offsetcompensation leads to stable magnetic characteristicsover supply voltage and temperature.

The HAL401 can be used for magnetic field measure-ments, current measurements, and detection of any me-chanical movement. Very accurate angle measure-ments or distance measurements can also be done. Thesensor is very robust and can be used in electrical andmechanical hostile environments.

The sensor is designed for industrial and automotive ap-plications and operates in the ambient temperaturerange from –40 °C up to 150 °C and is available in theSMD-package SOT89B-1.

1.1. Features:

– switching offset compensation at 147 kHz

– low magnetic offset

– extremely sensitive

– operates from 4.8 to 12 V supply voltage

– wide temperature range TA = –40 °C to +150 °C

– overvoltage protection

– reverse voltage protection of VDD-pin

– differential output

– accurate absolute measurements of DC and low fre-quency magnetic fields

– on-chip temperature compensation

1.2. Marking Code

Type Temperature Range

A K

HAL401 401A 401K

1.3. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chiptemperature (junction temperature TJ).

A: TJ = –40 °C to +170 °C

K: TJ = –40 °C to +140 °C

Note: Due to power dissipation, there is a difference be-tween the ambient temperature (TA) and junctiontemperature. Please refer to section 4.1. on page18 for details.

1.4. Hall Sensor Package Codes

Type: 401

HALXXXPA-TTemperature Range: A or KPackage: SF for SOT89B-1

→ Type: 401→ Package: SOT89B-1→ Temperature Range: TJ = –40 °C to +140 °C

Example: HAL401SF-K

Hall sensors are available in a wide variety of packagingversions and quantities. For more detailed information,please refer to the brochure: “Hall Sensors: OrderingCodes, Packaging, Handling”.

HAL401DATA SHEET

5Micronas

1.5. Solderability and Welding

Soldering

During soldering reflow processing and manual rework-ing, a component body temperature of 260 °C should notbe exceeded.

Welding

Device terminals should be compatible with laser and re-sistance welding. Please note that the success of thewelding process is subject to different welding parame-ters which will vary according to the welding techniqueused. A very close control of the welding parameters isabsolutely necessary in order to reach satisfying results.Micronas, therefore, does not give any implied or ex-press warranty as to the ability to weld the component.

OUT1

GND

2

4

1 VDD

Fig. 1–1: Pin configuration

OUT23

HAL401 DATA SHEET

6 Micronas

2. Functional Description

Temp.DependentBias

OffsetCompensation;Hallplate

SwitchingMatrix

1

4

2 3

OUT1 OUT2

Fig. 2–1: Block diagram of the HAL401 (top view)

VDD

ProtectionDevice

ChopperOscillator

GND

The Linear Hall Sensor measures constant and low fre-quency magnetic flux densities accurately. The differen-tial output voltage VOUTDIF (difference of the voltages onpin 2 and pin 3) is proportional to the magnetic flux densi-ty passing vertically through the sensitive area of thechip. The common mode voltage VCM (average of thevoltages on pin 2 and pin 3) of the differential output am-plifier is a constant 2.2 V.

The differential output voltage consists of two compo-nents due to the switching offset compensation tech-nique. The average of the differential output voltage rep-resents the magnetic flux density. This component isoverlaid by a differential AC signal at a typical frequencyof 147 kHz. The AC signal represents the internal offsetvoltages of amplifiers and hall plates that are influencedby mechanical stress and temperature cycling.

External filtering or integrating measurement can bedone to eliminate the AC component of the signal. Re-sultingly, the influence of mechanical stress and temper-ature cycling is suppressed. No adjustment of magneticoffset is needed.

The sensitivity is stabilized over a wide range of temper-ature and supply voltage due to internal voltage regula-tion and circuits for temperature compensation.

Offset Compensation (see Fig. 2–2)

The Hall Offset Voltage is the residual voltage measuredin absence of a magnetic field (zero-field residual volt-age). This voltage is caused by mechanical stress andcan be modeled by a displacement of the connectionsfor voltage measurement and/or current supply.

Compensation of this kind of offset is done by cycliccommutating the connections for current flow and volt-age measurement.

– First cycle:The hall supply current flows between points 4 and 2.In the absence of a magnetic field, V13 is the Hall Off-set Voltage (+VOffs). In case of a magnetic field, V13 isthe sum of the Hall voltage (VH) and VOffs. V13 = VH + VOffs

– Second cycle:The hall supply current flows between points 1 and 3.In the absence of a magnetic field, V24 is the Hall Off-set Voltage with negative polarity (–VOffs). In case ofa magnetic field, V24 is the difference of the Hall volt-age (VH) and VOffs. V24 = VH – VOffs

In the first cycle, the output shows the sum of the Hallvoltage and the offset; in the second, the difference ofboth. The difference of the mean values of VOUT1 andVOUT2 (VOUTDIF) is equivalent to VHall.

Fig. 2–2: Hall Offset Compensation

Note: The numbers do notrepresent pin numbers.

IC 24

VOffs

1

3 V

IC

24

VOffs

1

3

V

V

t

VCM

for B�0 mTVOUT1

VOUT2

VOUTDIF

VOUTDIF/2

VOUTDIF/2

1/fCH = 6.7 μs

VOUTAC

a) Offset Voltage b) Switched Current Supply c) Output Voltage

HAL401DATA SHEET

7Micronas

3. Specifications

3.1. Outline Dimensions

Fig. 3–1: SOT89B-1: Plastic Small Outline Transistor package, 4 leadsWeight approximately 0.034 g

HAL401 DATA SHEET

8 Micronas

3.2. Dimensions of Sensitive Area

0.37 mm x 0.17 mm

3.3. Position of Sensitive Area

SOT89B-1

y 0.95 mm nominal

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thisis a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maxi-mum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electricfields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolutemaximum-rated voltages to this circuit.

All voltages listed are referenced to ground (GND).

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 –12 12 V

VO Output Voltage 2, 3 –0.3 12 V

IO Continuous Output Current 2, 3 –5 5 mA

TJ Junction Temperature Range –40 170 °C

TA Ambient Temperature at VDD = 5 Vat VDD = 12 V

––

150125

°C°C

3.4.1. Storage and Shelf Life

The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.

Solderability is guaranteed for one year from the date code on the package.

HAL401DATA SHEET

9Micronas

3.5. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi-cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground (GND).

Symbol Parameter Pin No. Min. Max. Unit Remarks

IO Continuous Output Current 2, 3 –2.25 2.25 mA TJ = 25 °C

IO Continuous Output Current 2, 3 –1 1 mA TJ = 170 °C

CL Load Capacitance 2, 3 – 1 nF

VDD Supply Voltage 1 4.8 12 V see Fig. 3–2

B Magnetic Field Range –50 50 mT

ÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈ

Fig. 3–2: Recommended Operating Supply Voltage

12 V

6.8 V

4.8 V

–40 °C 25 °C 150 °C125 °C

VDD

TA

power dissipation limit

min. VDD for specifiedsensitivity

4.5 V

8.0 V

11.5 V

HAL401 DATA SHEET

10 Micronas

3.6. Characteristics at TJ = –40 °C to +170 °C , VDD = 4.8 V to 12 V, GND = 0 Vat Recommended Operation Conditions (Fig. 3–2 for TA and VDD) as not otherwise specified in the column “Conditions”.Typical characteristics for TJ = 25 °C, VDD = 6.8 V and –50 mT < B < 50 mT

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

IDD Supply Current 1 11 14.5 17.1 mA TJ = 25 °C, IOUT1,2 = 0 mA

IDD Supply Current over Temperature Range

1 9 14.5 18.5 mA IOUT1,2 = 0 mA

VCM Common Mode Output VoltageVCM = (VOUT1 + VOUT2 ) / 2

2, 3 2.1 2.2 2.3 V IOUT1,2 = 0 mA,

CMRR Common Mode Rejection Ratio 2, 3 –2.5 0 2.5 mV/V IOUT1,2 = 0 mA,CMRR is limited by the influ-ence of power dissipation.

SB Differential Magnetic Sensitivity 2–3 42 48.5 55 mV/mT –50 mT < B < 50 mTTJ = 25 °C

SB Differential Magnetic Sensitivity over Temperature Range

2–3 37.5 46.5 55 mV/mT –50 mT < B < 50 mT

Boffset Magnetic Offset over Temperature

2–3 –1.5 –0.2 1.5 mT B = 0 mT, IOUT1,2 = 0 mA

ΔBOFFSET/ΔT

Magnetic Offset Change –25 0 25 μT/K B = 0 mT, IOUT1,2 = 0 mA

BW Bandwidth (–3 dB) 2–3 – 10 – kHz without external Filter1)

NLdif Non-Linearity of Differential Output

2–3 – 0.5 2 % –50 mT < B < 50 mT

NLsingle Non-Linearity of Single Ended Output

2, 3 – 2 – %

fCH Chopper Frequency over Temp. 2, 3 – 147 – kHz

VOUTACpp Peak-to-Peak AC Output Voltage

2, 3 – 0.6 1.3 V

nmeff Magnetic RMS DifferentialBroadband Noise

2–3 – 10 – μT BW = 10 Hz to 10 kHz

fCflicker Corner Frequencyof 1/f Noise

2–3 – 10 – Hz B = 0 mT

fCflicker Corner Frequency of 1/f Noise

2–3 – 100 – Hz B = 50 mT

ROUT Output Impedance 2, 3 – 30 50 Ω IOUT1,2 � 2.5 mA, TJ = 25 °C, VDD = 6.8 V

ROUT Output Impedance over Temperature

2, 3 – 30 150 Ω IOUT1,2 � 2.5 mA

RthJSB caseSOT89B-1

Thermal Resistance Junction toSubstrate Backside

– 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mmpad size (see Fig. 3–3)

1) with external 2 pole filter (f3db = 5 kHz), VOUTAC is reduced to less than 1 mV by limiting the bandwith

HAL401DATA SHEET

11Micronas

1.05

1.05

1.80

0.50

1.50

1.45

2.90

Fig. 3–3: Recommended footprint SOT89B,Dimensions in mm

Note: All dimensions are for reference only. The padsize may vary depending on the requirements ofthe soldering process.

HAL401 DATA SHEET

12 Micronas

0

1

2

3

4

5

–150 –100 –50 0 50 100 150 mT

V

B

VOUT1VOUT2

VOUT1 VOUT2

Fig. 3–4: Typical output voltages versus magnetic flux density

TA = 25 °CVDD = 6.8 V

–2

–1.5

–1.0

–0.5

0.0

0.5

1.0

1.5

2.0

2 4 6 8 10 12 14 V

mT

VDD

BOFFS

B = 0 mT

Fig. 3–5: Typical magnetic offset ofdifferential output versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

–0.05

–0.04

–0.03

–0.02

–0.01

0.00

0.01

0.02

0.03

0.04

0.05

2 4 6 8 10 12 14 V

V

VDD

VOFFS

B = 0 mT

Fig. 3–6: Typical differential output offsetvoltage versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

–2

–1.5

–1.0

–0.5

0.0

0.5

1.0

1.5

2.0

–50 –25 0 25 50 75 100 125 150 °C

mT

TA

BOFFS

B = 0 mT

Fig. 3–7: Typical magnetic offset of differentialoutput versus ambient temperature

VDD = 4.8 V

VDD = 6.0 V

VDD = 12 V

HAL401DATA SHEET

13Micronas

15

20

25

30

35

40

45

50

55

60

2 4 6 8 10 12 14 V

mV/mT

VDD

SB

B = ±50 mT

Fig. 3–8: Typical differential magneticsensitivity versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

–1.5

–1.0

–0.5

0.0

0.5

1.0

1.5

–80 –60 –40 –20 0 20 40 60 80 mT

%

B

NLdif

TA = 25 °C

Fig. 3–9: Typical non-linearity of differentialoutput versus magnetic flux density

VDD = 4.8 V

VDD = 6.0 V

VDD = 12 V

15

20

25

30

35

40

45

50

55

60

–50 –25 0 25 50 75 100 125 150 °C

mV/mT

TA

SB

B = ±50 mT

Fig. 3–10: Typical differential magnetic sensitivity versus ambient temperature

VDD = 4.8 V

VDD = 6.0 V

VDD = 12 V

–1.5

–1.0

–0.5

0.0

0.5

1.0

1.5

–80 –60 –40 –20 0 20 40 60 80 mT

%

B

NLdif

VDD = 6.8 V

Fig. 3–11: Typical non-linearity of differentialoutput versus magnetic flux density

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

HAL401 DATA SHEET

14 Micronas

–3

–2

–1

0

1

2

3

–80 –60 –40 –20 0 20 40 60 80

VDD = 12 V

mT

%

B

NLsingle

TA = 25 °C

Fig. 3–12: Typical single-ended non-linearityversus magnetic flux density

VDD = 4.8 V

0

20

40

60

80

100

120

140

160

180

200

2 4 6 8 10 12 14 V

kHz

VDD

fCH

Fig. 3–13: Typical chopper frequency versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

–3

–2

–1

0

1

2

3

–80 –60 –40 –20 0 20 40 60 80 mT

%

B

NLsingle

VDD = 6.0 V

Fig. 3–14: Typical non-linearity of single-ended output versus magnetic flux density

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

0

20

40

60

80

100

120

140

160

180

200

–50 –25 0 25 50 75 100 125 150 °C

kHz

TA

fCH

Fig. 3–15: Typical chopper frequency versus ambient temperature

VDD = 4.8 V

VDD = 6.0 V

VDD = 12 V

HAL401DATA SHEET

15Micronas

1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2 4 6 8 10 12 14 V

V

VDD

VCM

Fig. 3–16: Typical common mode output voltage versus supply voltage

TA = 150 °C

TA = –40 °C

TA = 25 °C

0

200

400

600

800

1000

2 4 6 8 10 12 14 V

mV

VDD

TA = 25 °C

VOUT1pp,VOUT2pp

Fig. 3–17: Typical output AC voltage versus supply voltage

2.15

2.16

2.17

2.18

2.19

2.20

2.21

2.22

2.23

2.24

2.25

–50 –25 0 25 50 75 100 125 150 °C

V

TA

VCM

VDD = 12 V

VDD = 4.8 V

Fig. 3–18: Typical common mode output voltage versus ambient temperature

0

200

400

600

800

1000

–50 –25 0 25 50 75 100 125 150 °C

mV

TA

VOUT1pp,VOUT2pp

Fig. 3–19: Typical output AC voltage versus ambient temperature

VDD = 4.8 V

VDD = 6.0 V

VDD = 12 V

HAL401 DATA SHEET

16 Micronas

–25

–20

–15

–10

–5

0

5

10

15

20

25

–15 –10 –5 0 5 10 15 V

mA

VDD

IDD

IOUT1,2 = 0 mA

Fig. 3–20: Typical supply current versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

0

5

10

15

20

–50 –25 0 25 50 75 100 125 150 °C

mA

TA

IDD

B = 0 mT

Fig. 3–21: Typical supply current versus temperature

VDD = 4.8 V

VDD = 6.0 V

VDD = 12 V

0

5

10

15

20

2 3 4 5 6 7 8 V

mA

VDD

IDD

IOUT1,2 = 0 mA

Fig. 3–22: Typical supply current versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 125 °C

TA = 150 °C

0

5

10

15

20

25

–6 –4 –2 0 2 4 6 mA

mA

IOUT1,2

IDD

B = 0 mT

Fig. 3–23: Typical supply current versus output current

VDD = 12 V

VDD = 4.8 V

HAL401DATA SHEET

17Micronas

0

20

40

60

80

100

120

140

160

180

200

–50 –25 0 25 50 75 100 125 150 °C

Ω

TA

ROUT

B = 0 mT

Fig. 3–24: Typical dynamic differential output resistance versus temperature

VDD = 4.8 V

VDD = 6.0 V

VDD = 12 V

–40

–30

–20

–10

0

10

20

10 100 1000 10000 100000

dB

fB

sB

TA = 25 °C0 dB = 42.5 mV/mT

10 100 1 k 10 k 100 k

Fig. 3–25: Typical magnetic frequency response

–150

–140

–130

–120

–110

–100

0.1 1.0 10.0 100.01000.010000.0100000.01000000.0

f

nmeff

TA = 25 °C

0.1 1 10 100 1k 10k 100k 1M Hz

Fig. 3–26: Typical magnetic noise spectrum

dBTrms

Hz�

B = 0 mT

B = 65 mT

83 nTHz�

HAL401 DATA SHEET

18 Micronas

4. Application Notes

Mechanical stress on the device surface (caused by thepackage of the sensor module or overmolding) can influ-ence the sensor performance.

The parameter VOUTACpp (see Fig. 2–2) increases withexternal mechanical stress. This can cause linearity er-rors at the limits of the recommended operation condi-tions.

4.1. Ambient Temperature

Due to internal power dissipation, the temperature onthe silicon chip (junction temperature TJ) is higher thanthe temperature outside the package (ambient tempera-ture TA).

TJ = TA + ΔT

At static conditions and continuous operation, the follow-ing equation applies:

ΔT = IDD * VDD * RthJSB

For all sensors, the junction temperature range TJ isspecified. The maximum ambient temperature TAmaxcan be calculated as:

TAmax = TJmax – ΔT

For typical values, use the typical parameters. For worstcase calculation, use the max. parameters for IDD andRth, and the max. value for VDD from the application.

4.2. EMC and ESD

Please contact Micronas for detailed information onEMC and ESD results.

4.3. Application Circuit

The normal integrating characteristics of a voltmeter issufficient for signal filtering.

Do not connect OUT1 or OUT2 to Ground.

VDD

OUT1

OUT2

GND

HAL401Oscillo-scope

Ch1

Ch2

Fig. 4–1: Filtering of output signals

VDD

1

2

3

4

330 p

330 p

4.7n 47 n

47 n

1 k

1 k

3.3 k

3.3 k6.8 n

Display the difference between channel 1 and channel2 to show the Hall voltage. Capacitors 4.7 nF and 330 pFfor electromagnetic immunity are recommended.

Do not connect OUT1 or OUT2 to Ground.

VDD

OUT1

OUT2

GND

HAL401

High

Low

Fig. 4–2: Flux density measurement with voltmeter

VDD

1

2

3

4

VoltageMeter

HAL401DATA SHEET

19Micronas

Do not connect OUT1 or OUT2 to Ground.

VDD

OUT1

OUT2

GND

HAL401

Fig. 4–3: Differential HAL401 output to single-ended outputR = 10 kΩ, C = 7.5 nF, ΔR for offset adjustment, BW–3dB = 1.3 kHz

VDD

1

2

3

4

330 p

330 p

4.7n

ADC

VCC

R

1.5 R

R–ΔR

R+ΔR

1.33 C

0.75 R

CMOSOPV

0.22 R

4.4 C

3 C

+

–

Do not connect OUT1 or OUT2 to Ground.

VDD

OUT1

OUT2

GND

HAL401

Fig. 4–4: Differential HAL401 output to single-ended output (referenced to ground), filter – BW–3dB = 14.7 kHz

VDD

1

2

3

4

330 p

330 p

4.7 n

4.7 k

4.7 k

4.7 k

CMOSOPV+

–

4.7 n

4.7 k

8.2 n

CMOSOPV+

–

2.2 n

4.7 k

4.7 k

3.0 k

1 n

VCC�6 V

VEE��6 V

OUT

HAL401 DATA SHEET

20 Micronas

5. Data Sheet History

1. Final Data Sheet: “HAL401 Linear Hall Effect Sen-sor IC”, June 26, 2002, 6251-470-1DS. First release of the final data sheet.

2. Final Data Sheet: “HAL401 Linear Hall Effect Sen-sor IC”, Sept. 14, 2004, 6251-470-2DS. Second release of the final data sheet. Major changes:

– new package diagram for SOT89-1

3. Final Data Sheet: “HAL401 Linear Hall Effect Sen-sor IC”, Dec. 8, 2008, DSH000018_002EN Third release of the final data sheet. Major changes:

– Section 1.5. “Solderability and Welding” updated

– package diagrams updated

– Fig. 3–3: “Recommended footprint SOT89B” added

Micronas GmbHHans-Bunte-Strasse 19 · D-79108 Freiburg · P.O. Box 840 · D-79008 Freiburg, Germany

Tel. +49-761-517-0 · Fax +49-761-517-2174 · E-mail: docservice@micronas.com · Internet: www.micronas.com