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Transcript of Legend and Folklore: A bestiary of electronics · · 2015-07-28Legend and Folklore: A bestiary of...
![Page 1: Legend and Folklore: A bestiary of electronics · · 2015-07-28Legend and Folklore: A bestiary of electronics Mark Rodwell, ... from 2w2I /wx U/H J /Hv ... n T c q T n S U!](https://reader031.fdocuments.us/reader031/viewer/2022021512/5ae27e9f7f8b9a7b218c050d/html5/thumbnails/1.jpg)
Legend and Folklore:
A bestiary of electronics
Mark Rodwell, University of California, Santa Barbara
Short course, Device Research Conference, June , 05:
"Device Fundamentals You Were Never Taught: Interpreting Your Device Data"
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"Must-Haves”
for a Useful Electron Device
Mark Rodwell, University of California, Santa Barbara
Short course, Device Research Conference, June , 05:
"Device Fundamentals You Were Never Taught: Interpreting Your Device Data"
Legend and Folklore:
A bestiary of electronics
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With apologies to my co-authors.
C.-Y. Huang, J. Rode, S. Lee, V. Chobpattanna, P. Choudhary, A.C. Gossard, S. Stemmer ECE and Materials Departments, University of California, Santa Barbara P. Long, E. Wilson, M. Povolotskyi, G. Klimeck Network for Computational Nanotechnology, Purdue University
M. Urteaga, J. Hacker, M. Seo*, Z. Griffith, M. Fields, B. Brar
Teledyne Scientific and Imaging *Now Sunkyunkwan University.
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Legend and Folklore: a bestiary of electronics
Let us now go hunting ...
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Terra incognita: beyond the transistor
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"Moore's law, transistor scaling, is over."
"We need new paradigms beyond charge as a state variable"
"We need more than Moore"
(Why do paradigms always shift?)
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Moore or Dennard ?
Moore: predicted doubling of performance every ~18 months
Dennard: Proposed FET scaling laws (these now broken)
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Robert and Gordon: What's your problem ?
FETs will stop working when we make them much smaller.
~ l/n
Oxide tunneling Source-drain tunneling
Lithography is getting hard. minimum focus spot size deep UV absorbtion
Power density is becoming excessive
CwireVDD2 interconnect energy
Static leakage > Ionexp(-qVDD /kT)
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How electronics works today (same as in 1912)
tubes bipolar transistors field-effect transistors electrostatic barrier
Switching using charge-control
Communicating using... ...wires.
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Time for new state variables ?
Gravitonics ?
Quarkonics ? gluonics?
Mechanics ? millions of heavy nuclei ...
Magnetics ? F ~ v1v2/c2→ weak!
Neutrinoonics ?
our tool-kit:
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Our forebears chose wisely
Charge-control devices (switches) seem best confine & release charge using electrostatic barrier. electrons are light electrostatic force is strong over moderate* range.
Communicating using wires seems best signal using E&M waves guide them using wires E&M waves are strong & long-range. wires can be very narrow
http://semimd.com/chipworks/2014/10/27/intels-14nm-parts-are-finally-here/ca
0given size, source~ range* 2
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Two older computing technologies
Nerve Cells
Cellular chemistry
Both are charge-control dense slow long development (~109 years) large installed base
cascaded, inter-regulating chemical reactions = computing machine
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"CwireV2 dissipation constrains VLSI;
optical interconnects will fix this."
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Optical interconnects are better ?
Aren't they both E&M waves ? So: what's the difference ? Both store energy eE2/2 +mH2/2 , a.k.a. CV2/2+LI2/2
Wires can be either capacitors or transmission-lines echoes or not T-lines: static dissipation Capacitors: CV2/2 dissipation per transition
0/ vZlCwire
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Optical interconnects are better ?
If you shine a laser at a mirror, ...does it stop
drawing current ?
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Optical interconnects have static dissipation
draws current when "1" transmitted
No static dissipation....
inC
cC
hvVC
hvVC
ddin
ddc
/ needed photons#
/ ed transmittphotons#
...looks tough.
DDVDDV
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Other issues
optical losses
rough edge
bend radius 20nm contact pitch ?
Where to use optics: longer interconnect buses where switching activity is high
optics benefit: lower loss in longer interconnects
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Can man live at such speeds ?
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"Can man live at such speeds ?"
"Stephenson's Rocket drawing". Licensed under Public Domain via Wikimedia Commons - https://commons.wikimedia.org/wiki/File:Stephenson%27s_Rocket_drawing.jpg#/media/File:Stephenson%27s_Rocket_drawing.jpg
Stephenson's Rocket, 1829
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"Circuit theory doesn’t work in the
sub-mm-wave THz IR etc."
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Circuit theory is just Maxwell's equations
Circuits: Maxwell's equations in 0-D limit T-lines: Maxwell's equations in 1-D limit, etc.
Example: short T-line approximating an inductor
Any system of PDEs→ mesh finely into ODEs→ equivalent circuit
http://www5.ocn.ne.jp/
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Circuit theory: alive & well at 1.0 THz
22
620 GHz, 20 dB gain HBT amplifier M Seo, Teledyne, IMS 2013
Not shown: 670 GHz HBT amplifier: J. Hacker, Teledyne: IMS 2013
Xiaobing Mei, et al, IEEE EDL, April 2015 doi: 10.1109/LED.2015.2407193
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
No question that 1 THz interconnects are challenging, but they work...
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"Charge control doesn’t work in the
sub-mm-wave THz IR etc."
...we must use quantum transitions"
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FET parameter change
gate length decrease 2:1
current density (mA/mm), gm (mS/mm) increase 2:1
transport effective mass constant
channel 2DEG electron density increase 2:1
gate-channel capacitance density increase 2:1
dielectric equivalent thickness decrease 2:1
channel thickness decrease 2:1
channel state density increase 2:1
contact resistivities decrease 4:1
To double transistor bandwidth...
GW widthgate
GL
HBT parameter change
emitter & collector junction widths decrease 4:1
current density (mA/mm2) increase 4:1
current density (mA/mm) constant
collector depletion thickness decrease 2:1
base thickness decrease 1.4:1
contact resistivities decrease 4:1
eW
ELlength emitter
24
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Electron device scaling & frequency limits
topR
bottomR
PIN diode
To double bandwidth: reduce thicknesses 2:1 Improve contacts 4:1 reduce width 4:1, keep constant length increase current density 4:1
vJx ee /// from 22
width
lengthlog
length
power
thicknessarea /
length
width
4area
area/
thickness/area
thickness
2
limit-charge-space max,
T
I
R
R
C
sheetcontactbottom
contacttop
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How fast might it be ? 5nm diameter Schottky
2mA/ 0.3 diameter, 5nm nm, 5.3 :Assume mdeplT
aF 43.0/ :eCapacitanc DAC e
cm/s105.3)2/( : velocityAverage 7 Fermivv
fs 5.7
k17/2/
:) transport1D e(degenerat ResistanceJunction
2
CR
qIkTqhR
j
j
as 65
148: contacts),( Resistance Series
CR
RN
S
S
fs 6.9)2//( :meTransit ti Fermidepltransit vT
20-30 THz diode cutoff frequencies ?
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How fast might it be ? 5nm diameter diode
Rob Maurer, Cheng-Ying Huang, Unpublished
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...plasma resonance sets an upper frequency limit "
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Plasma resonance ? No worries !
*2kinetic
1
nmqA
TL
T
AC
entdisplaceme
m
scatteringL
Rf
2
1
2
1
frequency scattering
kinetic
bulk
mnmqA
TR
*2bulk
1
e
2
1
2/1
frequency relaxation dielectric
bulkntdisplaceme
RC
fdielectric
ntdisplacemekinetic
2/1
frequencyplasma
CLf plasma
THz 800 THz 7 THz 74319 cm/105.3
InGaAs-
n
319 cm/107
InGaAs-
pTHz 80 THz 12 THz 13
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Plasma resonance ? No worries !
*2kinetic
1
nmqA
TL
T
AC
entdisplaceme
THz72
1 frequency scattering
kinetic
bulk L
Rfscattering
mnmqA
TR
*2bulk
1
Above 7 THz, kinetic inductance increases N+/P+ layer impedances. But: contact resistances >> (N+/P+) resistances. A non-dominant resistance is increasing with frequency.
Not a serious concern until ~30THz.
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...optics is fast, electronics is slow"
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Transistors today
NGST Xiaobing Mei et al, IEEE EDL, April 2015
InP HEMTs
Teledyne: M. Urteaga et al: 2011 DRC, June
InP HBTs
These made fast by scaling FET Bipolar
lithographic dimensions: 25nm 130nm
epitaxial dimensions ~7nm 20nm base, 100nm collector
contact resistivities ~2-4-mm2 (both)
current densities ~1mA/mm 100 mA/mm2
~2 mA/mm 20-30 mA/mm2
Feasible to make these transistors (somewhat) faster.
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Optics is fast ? Really ?
Optics has high *carrier* frequencies: 1.3 mm→ 230 THz
But, the per-channel *modulation* bandwidths are low.* 20~30 GHz modulation bandwidths for lasers 20~40 GHz for electro-absorbtion modulators a few ~100 GHz traveling-wave EO modulators; these are big
Terabit optical fiber systems aggregate many channels. WDM, polarization, etc Need lots of channels→ cost
Why are optical devices slow ?
*sure, a mode-locked-laser might have a 0.5fs pulse width, but how rapidly can you impose a signal (information) on this pulse?
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Optical devices are hard to scale
Optical mode size prevents scaling: minimum I-layer thickness minimum lateral junction width maximum (P-/N-) doping (free-carrier losses)
+V (DC)
N+
N-
I
P-
P+
metal
metal
opticalmode
-V (DC)
AC outputfield
high er
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But their carrier frequencies are high
Transistor R/C/ limits don't apply to laser (etc) carrier frequency carrier optical field guided by dielectric waveguide AC field kept away from resistive bulk and contact regions. AC signal not coupled through electrical contacts such dielectric mode confinement hard at low frequencies
+V (DC)
N+
N-
I
P-
P+
metal
metal
opticalmode
-V (DC)
AC outputfield
high er
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"Tubes are ancient history"
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Tubes are ancient ? They still beat transistors !
We developed a 180mW , 220 GHz HBT power amplifier...
... as part of a driver for a 20W, 220 GHz traveling-wave tube...
T Reed et al, CSICS 2014
We develop solid-state mm-wave sources, seeking to drive or replace existing high-power tubes.
... for DARPA's 220 GHz radar
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Myths about III-Vs
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Heard often at IEDM (even said by some III-V MOS folk)
(never at DRC) :
"III-V contacts much poorer than Si" "...can't be doped above 1018/cm3."
"...need to unpin the Fermi level under the contacts."
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FET parameter change
gate length decrease 2:1
current density (mA/mm), gm (mS/mm) increase 2:1
transport effective mass constant
channel 2DEG electron density increase 2:1
gate-channel capacitance density increase 2:1
dielectric equivalent thickness decrease 2:1
channel thickness decrease 2:1
channel state density increase 2:1
contact resistivities decrease 4:1
To double transistor bandwidth...
GW widthgate
GL
HBT parameter change
emitter & collector junction widths decrease 4:1
current density (mA/mm2) increase 4:1
current density (mA/mm) constant
collector depletion thickness decrease 2:1
base thickness decrease 1.4:1
contact resistivities decrease 4:1
eW
ELlength emitter
40
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III-V contacts much poorer than Si ???
For N-type, Si seems to be just a bit better Si at ~0.3 -mm2 , InAs at ~0.5 -mm2
For P-type, Si significantly better P-SiGe:~0.15 -mm2 (ZHANG et al, EDL, June 2013)
P-InGaAs at ~0.5 -mm2
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III-V's can't be N-doped above ~1018/cm3 ???
Very strange, very persistent myth.
Easy fix: read any of 100's of papers in the literature N-type InGaAs to ~8*1019/cm3, InAs to 1020/cm3, P-type InGaAs to ~2*1020/cm3
Myth seems to arise from low conduction-band state density InGaAs effective state density Ns~4*1017/cm3, Surely it is not possible to dope higher than that ? ;-)
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Need to unpin the contact Fermi level ???
N-InGaAs seems to have a ~0.2 eV Schottky barrier ~0.6nm depletion depth ~one lattice constant
N-InAs, or course, has a *negative* ~0.2 eV Schottky barrier with no barrier, is contact resistivity zero ??? No→ Landauer !
tcoefficienon transmissi ion,concentratcarrier
1
||||
1
3
83/22
3/2
2
Tn
nTqc
Wavefunction reflects due to mass, energy change → |T|<1 (over)simplified theory, heavily-doped InAs : |T|2 ~0.3, Experimental: |T|2 ~0.1
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TLM Resistance, at zero spacing, is the contacts ?
That's how we all learned to characterize contacts.
Ti/Pd/Au
5 nm Intrinsic InGaAs (Capping layer)
60 nm N+ InGaAs
(regrown contact layer)
Gap
Channel
0 5 10 15 20 250
100
200
300
400
500
600
700
800
Re
sis
tan
ce
(O
hm
-mm
)
Gap (mm)
Y = 24 + 25*X
c = 5.3 -mm
2
RN+SD
= 85 -mm
widthTLM
knesslayer thic-epi
ion,concentratcarrier
11
3
83/2
3/2
2Landauer
W
H
n
nHWqR
But the zero-gap resistance also contains a Landauer term:
Correction can be significant Contacts are better than we think UCSB's published N-InAs contact data is pessimistic
Lee et al, 2015 VLSI symposium
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"III-V dielectrics are still very poor"
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Are III-V dielectrics still very poor ?
Maybe not perfect. But perhaps better than one might think. Here are Susanne Stemmer's dielectrics in our FETs.
-0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.710
-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
|Ga
te L
ea
ka
ge
| (A
/cm
2)
Cu
rre
nt
De
ns
ity
(m
A/m
m)
Gate Bias (V)
10-5
10-4
10-3
10-2
10-1
100
101
SSmin
~ 61 mV/dec.
(at VDS
= 0.1 V)
SSmin
~ 63 mV/dec.
(at VDS
= 0.5 V)
Dot : Reverse Sweep
Solid: Forward Sweep
Lg = 1 mm
61 mV/dec Subthreshold swing at VDS=0.1 V. Negligible hysteresis
Lee
et
al, 2
01
5 V
LSI s
ymp
osi
um
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BJT Myths
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"...bipolar transistors are current controlled, FETs are voltage-controlled"
Given some finite, nonzero input impedance, there's a 1-1 relationship between voltage & current...
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"InP is poor for power devices: vsat is only ~1.5*107 cm/s"
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Is the velocity low in InP ??
This is the bulk velocity-field curve http://www.ioffe.ru/SVA/NSM/Semicond/InP/Figs/837.gif
But, in InP collector, no G-L scattering until band energies allow it.
Typical velocities are ~3E7 cm/s.
"velocity overshoot"
Drops at higher voltages...
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Rbb is not "base spreading resistance"
It's mostly from the contacts
..and a bit from the gap
..and quite a lot from the metal !
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Are base-emitter heterojunctions important ?
InGaAs emitter & base no EB heterojunction large electron degeneracy don't need heterojunction !
History Woodall pointed it out. Ritter did the experiment. Verified !
Why do we keep the InP ? InP/InGaAs selective etch precision placement of base contact.
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Are DHBTs slow when saturated ?
DHBTs don't store holes in the subcollector: base-collector junction blocks hole injection into collector much less saturation charge.
Classic bipolar transistor saturation: moderate minority carrier storage in base large minority carrier storage in subcollector subcollector stored charge dominates
Circuit implications: base-collector diodes are Schottky like Daneshgar 2014: use in fast sample-hold gates CMOS-like saturating-HBT logic Taur et al 2015: proposed as CMOS logic replacement
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10-3
10-2
10-1
100
101
102
-0.3 -0.2 -0.1 0 0.1 0.2
J(m
A/m
m2)
Vbe
-
Fermi-Dirac
Highly degenerate
(Vbe
->>kT/q
Boltzmann
(-Vbe
)>>kT/q
HBTs have exponential I-V characteristics ????
Boltzmann
2
32
3
)(8
*
beV
mq
)/exp( kTqVbe
Fermi-Dirac
Highly Degenerate
130nm InP HBT
drops gm→ hurts bandwidth
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FET Myths
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"Long-channel FETs are limited by mobility...
...short-channel FETs are limited by saturation drift velocity".
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Mobility/saturation velocity model ???
ID
VDS
increasingVGS
gthgsgoxD LVVWcI 2/)(
current limitedmobility
2
,
mm
)(
current limitedvelocity
, thgssatgoxvD VVvWcI
1
Expression dGeneralize
,
2
,
mD
D
vD
D
I
I
I
I
Id
VgsVth
mobility-limited
velocity-limited
: voltageknee thenlarger tha voltagesdrainFor
!correct not is This
notes class ateundergraduMy
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Short-channel: Ballistic top-of-barrier model
Natori, Lundstrom, Antoniadis
If zero scattering between source and barrier: velocity set by mv2= Eelectron-Ec,barrier. current= #states above barrier times velocity of each scattering in drain region: reduces f , doesn’t reduce current
Scattering near source: drops Ef near barrier reduces current
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Are FET f's set by transit times ?
Everyone knows this.
But, the significance is not always noted.
End capacitances about 0.3 fF/mm total in HEMTs about 1.0 fF/mm total in CMOS VLSI.
Impact on f (assuming zero gate length): gm=2mS/mm, 0.3 fF/mm→f =1.1 THz (InP HEMT) gm=1mS/mm, 0.3 fF/mm→f =550 GHz (GaN HEMT) gm=2mS/mm, 1.0 fF/mm→f =320 GHz (CMOS) Yet, gm is also hard to increase (gate dielectric scaling)
Cend/gm time constant is major bandwidth limit.
...es)/capacitanc end(/2/1 mg gvLf
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But the roadmap says VLSI will give 1 THz f...
They have fixed it now, but...
...one recent RF ITRS roadmap predicted: f increases as 1/(technology note)
Physics-free prediction 1) gate length no longer proportional to technology node 2) 1/2f=Lg/v+Cends/gm+... ...some terms no longer scale.
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Embellishment, fantabulism,
and balderdash.
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Power Transistor Gamesmanship
Quote bandwidth at a low voltage, breakdown at a high one.
For InP HBTs, f drops with increased Vce: Movement of depletion edge decrease in distance before G-L scattering..
For HEMTs, f drops with increased Vce: Lateral movement of gate-drain depletion edge
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Gamesmanship with breakdown
Is this breakdown useful ?
How about this ?
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In designing PAs, such games would kill the IC.
This is how we specify our HBTs internally...
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VLSI specsmanship
It's nice to have high gm, low SS, but (Ion, Ioff, VDD) is better you can have low SS, but a bad leakage tail will increase Ioff.
-0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.510
-7
10-6
10-5
10-4
10-3
10-2
10-1
100
101
DIBL = 76 mV/V
VT = -85 mV at 1 mA/mm
SSmin
~ 72 mV/dec. (at VDS
= 0.1 V)
SSmin
~ 77 mV/dec. (at VDS
= 0.5 V)
Lg = 25 nm
VDS
= 0.1 to 0.7 V
0.2 V increment
Cu
rre
nt
De
ns
ity
(m
A/m
m)
Gate Bias (V)
leakage tail
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VLSI specmanship
A few recent papers have even done this...
stated off-current using extrapolation
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VLSI specmanship
Or quote SS, gm, DIBL etc on a long-channel device Nice to look at...but the VLSI IC will use short-channel FETs...
0.01 0.1 160
70
80
90
100
110
5.0 nm InAs
2.5 nm InAs
Open: VDS
= 0.1 V
Solid: VDS
= 0.5 V
Gate Length (mm)
SS
min (
mV
/de
c)
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Transistor benchmarks for circuits
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Gain
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How much gain can we get from a transistor ?
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How much gain can we get from a transistor ?
MSG: maximum obtainable gain, with no added feedback, If we add sufficient stabilizing resistance to ensure that no change in the generator or load can cause oscillation
0
5
10
15
20
25
30
10 100 1000
gain
s, dB
Frequency, GHz
Common base MAG/MSG
Common emitter MAG/MSG
Mason's unilateral gain
U: gain if we unilateralize (add lossless reciprocal feedback) and then match.
Note that the common-base MSG is larger than U !
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How much gain can we get from a transistor ?
The common-base MSG is larger than U. What does this tell us ? Adding feedback, and then re-stabilizing can increase gain. Even if we ensure unconditional stability.
Is there any upper bound to the gain so obtained ? No !
Mason showed that U is (1) an invariant (with respect to lossless reciprocal embedding) (2) the only invariant calculable from the network parameters.
→ The only limit to such design tricks is component tolerance.
Will such techniques be widely used ? Radios need LNAs and PAs These have quite different design constraints There are few applications for RF "A's" (i.e., not LNA, not PA)
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Common-base stages are less stable ????
MSG is the maximum obtainable gain If you don't add feedback and if you ensure that termination changes won't cause oscillation
...so, in what sense is the CB stage less stable ?
0
5
10
15
20
25
30
10 100 1000
gain
s, dB
Frequency, GHz
Common base MAG/MSG
Common emitter MAG/MSG
Mason's unilateral gain
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Noise
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We have a clean measure of noise performance
Vgen
Zs=Zo
noisematch
Zs
invariant.an such not is that Note
embedding. reciprocal losslessw.r.t invariant is that provesMason
1 as measure, noise the, Define
...111
cascade infinitean of figure noise theas Define
min
32
F
M
FMM
G
F
G
F
G
FFF
F
AAA
So, the best low-noise transistor is the one with the smallest M.
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Power
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Does fmax determine PA gain ? No !
Load is different for gain and for power MAG/MAG/U....obtained with load giving optimum gain load for maximum power is RLopt =(Vmax-Vmin)/Imax, plus parallel L
0
5
10
15
20
25
30
10 100 1000
gain
s, dB
Frequency, GHz
Common base MAG/MSG
Common emitter MAG/MSG
Mason's unilateral gain
Power gain with the optimum load match Can calculate this from transistor model (or Sij) and RL,opt. Load-pull measures this gain.
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Are super-high breakdown voltages useful ?
?PA 100GHz afor useful thisIs
V. 100 (2) mmA/ 1 (1)
r with transistohave weSuppose
max brVJ m
realized bet can' 100 :Note max RRL
001V 100 A,1
device hugemm1pick :BDesign
,max optLbr
g
RVI
W
matcht can'k1V 100 mA,100
:m100Pick :ADesign
,max
optLbr
g
RVI
W m
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Are super-high breakdown voltages useful ?
001V 100 A,1
device hugemm1pick :BDesign
,max optLbr
g
RVI
W
mm1 :cell FET Wide
spacing m10@ fingers 100 need
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Maximum useful breakdown voltage
cell FETPower
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Maximum power per cell
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A current-density-limit on mm-wave power
cell FETPower
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Must-Haves for Electronics
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RF/microwave/mmwave devices must have...
For general RF amplification, the answer's unclear Unilateral gain & fmax seem reasonable metrics. Fortunately, we always want PAs or LNAs
For low-noise RF transistors, the real metric is noise measure.
For high-power RF transistor, the metrics are maximum output power, and associated gain, into realizable load between ~10 and 100 . this involves both the discussed current & voltage metrics load-pull measures this.
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Logic : some desirables
not are OR and AND
NOR is as ,sufficient is alone NAND
functionsBoolean perform should Logic
analysis/power speed/sizein deviceson translatiinclude
"0" and "1" defining valuessame
variablephysical same theof form in theoutput andinput
Cascade should Gates
e.g. , problem if input is DC H-field and output is 50 GHz spin wave amplitude
e.g. , problem if input is DC current and output is DC B-field
tooneeded,probably isout -Fan
e.g. , problem if input is at 2 GHz, and output is at 25 GHz (parametric gain)
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Logic Elements Should Communicate
cts.interconne include explicitlymust analysesDelay Energy / Power /
wires.longmany have chips useful :rule sRent'
? big -how- ctsinterconnelonger drive toneeded devicesbigger
/area)complexity(Boolean small very be should gates
distances. longer the thegates, bigger the The
distances.t significan...over
ion / reagent concentration in solution (biology) wires gears (adding machines) optical waveguides
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Logic Should Be Robust
restored are levels :Digital
accumulate errors :Analog
t"don' ICs analog , scale ICs Digital" saysRabaey Jan
inVV 0outVV 1
1/ inout dVdV
ties.nonlineariimply toseems This
headache a isn propagatio reverseinput output
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Second Part
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Battling to make
good electron devices
Mark Rodwell, University of California, Santa Barbara
Short course, Device Research Conference, June 21, 2015:
"Device Fundamentals You Were Never Taught: Interpreting Your Device Data"
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With apologies to my co-authors.
C.-Y. Huang, J. Rode, S. Lee, V. Chobpattanna, P. Choudhary, A.C. Gossard, S. Stemmer ECE and Materials Departments, University of California, Santa Barbara P. Long, E. Wilson, M. Povolotskyi, G. Klimeck Network for Computational Nanotechnology, Purdue University
M. Urteaga, J. Hacker, M. Seo*, Z. Griffith, M. Fields, B. Brar
Teledyne Scientific and Imaging *Now Sunkyunkwan University.
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RF, Fast Digital Performance
Figures of Merit
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nm Transistors, Far-Infrared Integrated Circuits
IR today→ lasers & bolometers → generate & detect
It's all about the interfaces: contact and gate dielectrics...
Far-infrared ICs: classic device physics, classic circuit design
...wire resistance,...
...heat,...
...& charge density.
band structure and density of states !
92
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Transistor figures of Merit / Cutoff Frequencies
H21=short-circuit current gain
gai
ns,
dB
MAG = maximum available power gain: impedance-matched
U= unilateral power gain: feedback nulled, impedance-matched
fmax power-gain cutoff frequency
f current-gain cutoff frequency
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What Determines Gate Delay ?
cexLOGIC
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HBT Design For Digital & Mixed-Signal Performance
from charge-control analysis:
)./5.05.0(
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analog ICs have similar bandwidth constraints...
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Electron Device Design
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Transistor scaling laws: ( V,I,R,C,t ) vs. geometry
AR contact /
Bulk and Contact Resistances
Depletion Layers
T
AC e
v
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max)(4
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Thermal Resistance
Fringing Capacitances
e~/ LC finginge~/ LC finging
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Available quantum states to carry current
→ capacitance, transconductance contact resistance 97
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THz & nm Transistors: State Density Limits
2-D: FET 3-D: BJT
current
conductivity
capacitance
2/1
2/1
3
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# of available quantum states / energy determines FET channel capacitance FET and bipolar transistor current access resistance of Ohmic contact
98
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Refractory Contacts to In(Ga)As
Refractory: robust under high-current operation / Low penetration depth: ~ 1 nm / Performance sufficient for 32 nm /2.8 THz node.
10-10
10-9
10-8
10-7
10-6
10-5
1018
1019
1020
1021
N-InGaAs
B=0.6 eV
0.4 eV0.2 eV
0 eV
Electron Concentration, cm-3
Co
nta
ct
Re
sis
tivit
y,
cm
2
step-barrierLandauer
1018
1019
1020
1021
N-InAs
Electron Concentration, cm-3
0.2 eV
B=0.3 eV
step-barrier
B=0 eV
0.1 eV
Landauer
1018
1019
1020
1021
P-InGaAs
Hole Concentration, cm-3
B=0.8 eV
0.6 eV0.4 eV0.2 eV
step-barrierLandauer
requirements for 3 THz HBTs, 7nm III-V CMOS
Baraskar et al, Journal of Applied Physics, 2013
Why no ~2THz HBTs today ? Problem: reproducing these base contacts in full HBT process flow
99
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Refractory Contacts to In(Ga)As
10-10
10-9
10-8
10-7
10-6
10-5
1018
1019
1020
1021
N-InGaAs
B=0.6 eV
0.4 eV0.2 eV
0 eV
Electron Concentration, cm-3
Co
nta
ct
Re
sis
tivit
y,
cm
2
step-barrierLandauer
1018
1019
1020
1021
N-InAs
Electron Concentration, cm-3
0.2 eV
B=0.3 eV
step-barrier
B=0 eV
0.1 eV
Landauer
1018
1019
1020
1021
P-InGaAs
Hole Concentration, cm-3
B=0.8 eV
0.6 eV0.4 eV0.2 eV
step-barrierLandauer
Baraskar et al, Journal of Applied Physics, 2013
100
Schottky Barrier is about one lattice constant
what is setting contact resistivity ?
what resistivity should we expect ?
requirements for 3 THz HBTs, 7nm III-V CMOS
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Refractory Contacts to In(Ga)As
10-10
10-9
10-8
10-7
10-6
10-5
1018
1019
1020
1021
N-InGaAs
B=0.6 eV
0.4 eV0.2 eV
0 eV
Electron Concentration, cm-3
Co
nta
ct
Re
sis
tivit
y,
cm
2
step-barrierLandauer
1018
1019
1020
1021
N-InAs
Electron Concentration, cm-3
0.2 eV
B=0.3 eV
step-barrier
B=0 eV
0.1 eV
Landauer
1018
1019
1020
1021
P-InGaAs
Hole Concentration, cm-3
B=0.8 eV
0.6 eV0.4 eV0.2 eV
step-barrierLandauer
Baraskar et al, Journal of Applied Physics, 2013
101
limit)ty reflectivi-quantum
anddensity (state
:yresistivitcontact barrier -Zero
.cm/107 at m 1.0
tcoefficienon transmissi
ionconcentratcarrier
11
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2
n
T
n
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c
c
m
requirements for 3 THz HBTs, 7nm III-V CMOS
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Bipolar Transistors
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Bipolar Transistor Design eW
bcWcTbT
nbb DT 22
satcc vT 2
ELlength emitter
eex AR /contact
2
through-punchce,operatingce,max cesatc TVVAvI /)(,
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103
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Bipolar Transistor Design: Scaling eW
bcWcTbT
nbb DT 22
satcc vT 2
ELlength emitter cccb /TAC e
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104
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Scaling Laws, Scaling Roadmap
HBT parameter change
emitter & collector junction widths decrease 4:1
current density (mA/mm2) increase 4:1
current density (mA/mm) constant
collector depletion thickness decrease 2:1
base thickness decrease 1.4:1
emitter & base contact resistivities decrease 4:1
Narrow junctions.
Thin layers
High current density
Ultra low resistivity contacts 105
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Can we make a 2 THz SiGe Bipolar Transistor ?
InP SiGe
emitter 64 18 nm width
2 0.6 mm2 access
base 64 18 nm contact width,
2.5 0.7 mm2 contact
collector 53 15 nm thick
36 125 mA/mm2
2.75 1.3? V, breakdown
f 1000 1000 GHz
fmax 2000 2000 GHz
PAs 1000 1000 GHz
digital 480 480 GHz
(2:1 static divider metric)
Assumes collector junction 3:1 wider than emitter.
Assumes SiGe contacts no wider than junctions
Simple physics clearly drives scaling
transit times, Ccb/Ic
→ thinner layers, higher current density
high power density → narrow junctions
small junctions→ low resistance contacts
Key challenge: Breakdown
15 nm collector → very low breakdown
Also required:
low resistivity Ohmic contacts to Si
very high current densities: heat
106
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FET parameter change
gate length decrease 2:1
current density (mA/mm), gm (mS/mm) increase 2:1
channel 2DEG electron density increase 2:1
gate-channel capacitance density increase 2:1
dielectric equivalent thickness decrease 2:1
channel thickness decrease 2:1
channel density of states increase 2:1
source & drain contact resistivities decrease 4:1
To double transistor bandwidth...
GW widthgate
GL
HBT parameter change
emitter & collector junction widths decrease 4:1
current density (mA/mm2) increase 4:1
current density (mA/mm) constant
collector depletion thickness decrease 2:1
base thickness decrease 1.4:1
emitter & base contact resistivities decrease 4:1
eW
ELlength emitter
nearly constant junction temperature → linewidths vary as (1 / bandwidth)2
fringing capacitance does not scale → linewidths scale as (1 / bandwidth )
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Energy-limited vs. field-limited breakdown
band-band tunneling: base bandgap impact ionization: collector bandgap
108
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THz InP HBTs: Performance @ 130 nm Node
Teledyne: M. Urteaga et al: 2011 DRC
109
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Needed: Greatly Improved Ohmic Contacts Refractory Emitter Contacts
negligible penetration
110
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Base Ohmic Contact Penetration
~5 nm Pt contact penetration (into 25 nm base)
Base Ohmic Contact Penetration
111
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Blanket Base Metal Process
112
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Parasitics along length of HBT emitter
Base pad & feed increases Ccb
Emitter undercut actual junction shorter than drawn. → excess Ccb , excess base metal resistance
Base metal resistance adds to Rbb
all these factors decrease fmax
113
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Field-Effect Transistors
....for RF
114
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HEMTs: Key Device for Low Noise Figure
115
1
)(2
)(21
2
min
G
G
G
f
fRRRg
f
fRRRgF
igsm
igsm
Hand-derived modified Fukui Expression, fits CAD simulation extremely well.
0
2
4
6
8
10
1010
1011
1012
ft=300GHzft=600GHzft=1200GHzft=2400GHz
Nois
e f
igu
re,
dB
frequency, Hz
2:1 to 4:1 increase in f → greatly improved noise @ 200-670 GHz.
Better range in sub-mm-wave systems; or use smaller power amps.
Critical: Also enables THz systems beyond 820 GHz
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FET Design
g
DSWL
RRS/D
contact
gW width gate
gfgsgd WCC e ,
)/( gchgm LvCg
)/( evWLR ggDS
)density state /well(2// 2
wellwell qTT
WLC
oxox
gg
chg
ee
masstransport
1
capacitors threeabove the
between ratiodivision voltage2/1
v
116
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FET Design: Scaling
g
DSWL
RRS/D
contact
gW width gate
gfgsgd WCC e ,
)/( gchgm LvCg
)/( evWLR ggDS
)density state /well(2// 2
wellwell qTT
WLC
oxox
gg
chg
ee
masstransport
1
capacitors threeabove the
between ratiodivision voltage2/1
v
117
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FET Design: Scaling
g
DSWL
RRS/D
contact
gW width gate
gfgsgd WCC e ,
)/( gchgm LvCg
)/( evWLR ggDS
)density state /well(2// 2
wellwell qTT
WLC
oxox
gg
chg
ee
masstransport
1
capacitors threeabove the
between ratiodivision voltage2/1
v
118
2:1 2:1
constant 2:1 2:1
2:1 2:1
2:1 2:1 2:1
2:1
constant
constant
2:1 2:1
constant
2:1 2:1
4:1
constant
constant
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FET parameter change
gate length decrease 2:1
current density (mA/mm), gm (mS/mm) increase 2:1
transport effective mass constant
channel 2DEG electron density increase 2:1
gate-channel capacitance density increase 2:1
dielectric equivalent thickness decrease 2:1
channel thickness decrease 2:1
channel density of states increase 2:1
source & drain contact resistivities decrease 4:1
Field-Effect Transistor Scaling Laws
fringing capacitance does not scale → linewidths scale as (1 / bandwidth )
119
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FET parameter change
gate length decrease 2:1
current density (mA/mm), gm (mS/mm) increase 2:1
transport effective mass constant
channel 2DEG electron density increase 2:1
gate-channel capacitance density increase 2:1
dielectric equivalent thickness decrease 2:1
channel thickness decrease 2:1
channel density of states increase 2:1
source & drain contact resistivities decrease 4:1
Field-Effect Transistors No Longer Scale Properly
120
Gate dielectric can't be much further scaled. Not in CMOS VLSI, not in mm-wave HEMTs
gm/Wg (mS/mm) hard to increase→ Cfringe / gm prevents f scaling.
Shorter gate lengths degrade electrostatics→ reduced gm /Gds
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Scaling roadmap for InP HEMTs
121
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Field-Effect Transistors ....for logic
122
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What goals for logic FETs ?
Low off-state current (nA to pA/mm) for low static dissipation → minimum subthreshold slope→ minimum Lg / Tox low gate tunneling, low band-band tunneling
Low delay CFET V/Id in gates where transistor capacitances dominate.
Parasitic capacitances are 0.5-1.0 fF/mm → low C , high Id
Low delay Cwire V/Id in gates where wiring capacitances dominate.
→ need high Id / Wg
and small !
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FET parameter change
gate length decrease 2:1
current density (mA/mm) increase 2:1
transport mass constant
2DEG electron density increase 2:1
gate-channel capacitance density increase 2:1
dielectric equivalent thickness decrease 2:1
channel thickness decrease 2:1
channel state density increase 2:1
contact resistivities decrease 4:1
nm/VLSI MOSFET Scaling: Ideal and Feasible
GW widthgate
GL
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FET parameter change
gate length decrease 2:1
current density (mA/mm) increase 2:1
transport mass constant
2DEG electron density increase 2:1
gate-channel capacitance density increase 2:1
dielectric equivalent thickness decrease 2:1
channel thickness decrease 2:1
channel state density increase 2:1
contact resistivities decrease 4:1
nm/VLSI MOSFET Scaling: Ideal and Feasible
GW widthgate
GL
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FET parameter
gate length 8 nm
current density (mA/mm) 1 mA/mm @0.5V
transport mass
2DEG electron density 3*1012/cm2
gate-channel capacitance density
dielectric equivalent thickness 0.4 nm (0.8 nm fin)
channel thickness 2 nm (4 nm fin)
channel state density
contact resistivities 0.3 -mm2
nm/VLSI MOSFET Scaling: Goals
GW widthgate
GL
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Minimum Dielectric Thickness & Gate Leakage
)2exp(
ion)approximat (WKBy Probabiliton Transmissi
*2
:tcoefficienn Attenuatio
barrier
barrier
TP
Em
-6
-5.5
-5
-4.5
-4
-3.5
-3
-2.5
-2
eV
fro
m v
acu
um
le
vel
Si
InGaAs HfO2
TiO2
Ec
Ev
er ~20 e
r ~40
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Aspect ratio and subthreshold swing
grchd WC 0~ ee
/~ DACgs e
gsgrgrgs
gs
chDchsgs
gs
g CWWC
C
CCC
C
V /21
1
2
00 eeee
)/21)(/(
expexp 0
gsgr
gate
DCWqkT
V
kT
qI
ee
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Contact Resistance Scaling
With the above #s, contacts degrade on-current by ~15% A 2.4 mm2 contact would reduce the current 2:1
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Mobility in Thin Channels: Surface Roughness Scattering
0 1 2 3 4 5 6 70
200
400
600
800
1000
1200
x 1012
me
ff (
cm
2/s
-V)
Carrier Density (/cm2)
2.5 nm InAs
5.0 nm InAs
0.01 0.1 10.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8InAs channel thickness
2.5 nm
5.0 nm
VDS
= 0.5 V
Gate Length (mm)
Pe
ak
gm (
mS
/mm
)mobility in FET channels
Sakaki 2
62
Mobility well
wellq
T
Tm
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Mobility is high if surfaces are smooth
Quantum well: smooth surfaces
FET: rough surfaces
2
62
Mobility well
wellq
T
Tm
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Terms in gate-channel capacitance
inversiondepth /Tc e
oxc
)( thgs VV
2*2 2/ gmqcdos
)2/()()(charge channel 2* gmEEqVVcqn wellfwellfdoss
motion) onalunidirecti(
scale. both alsomust states ofdensity & thicknessInversion
qEE wellf /)(
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Calculating Current in Ballistic Limit
fvv )3/4( velocity electron mean
2/3
2/3
,
2/1
V 1)/*()/(1
)/*(
m
mA 84
thgs
ooxodos
oVV
mmgcc
mmgJ
m
minima band of # theis where, )/*(2/* ,
22 gmmgcgmqc oodosdos
thgs
dosequiv
equivdos
cfdos VVcc
ccVVc
s :charge Channel
2/* through velocity Fermidetermines
toapplied voltage voltage FermiChannel
2
ffff
dos
vmqVEv
c
Natori
2010 DRC Rodwell,
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InGaAs MOSFETs: superior Id to Si at large EOT. InGaAs MOSFETs: inferior Id to Si at small EOT.
2/3*
,
2/1*
1
2/3
1
)/()/(1 where,
V 1m
mA84
oequivodos
othgs
mmgcc
mmgK
VVKJ
m
Drive current versus mass, # valleys, and EOT
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.01 0.1 1
no
rma
lized
drive
cu
rre
nt
K1
m*/mo
g=2
EET=1.0 nm
0.6 nm
0.4 nm
g=1
InGaAs <--> InP Si
0.3 nm
EET=Equivalent Electrostatic Thickness
=Tox
eSiO2
/eox
+Tinversion
eSiO2
/esemiconductor
/EOTε
)/c/c(c oxequiv
2SiO
1
depth
11
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Why III-V MOS ?
III-V vs. Si: Low m*→ higher velocity. Fewer states→ less scattering → higher current. Can then trade for lower voltage or smaller FETs.
Problems: Low m*→ less charge. Low m* → more S/D tunneling. Narrow bandgap→ more band-band tunneling, impact ionization.
135
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InGaAs/InAs FETs are leaky!
136
-0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.510
-7
10-6
10-5
10-4
10-3
10-2
10-1
100
101
gm (
mS
/mm
)
Cu
rre
nt
De
ns
ity
(m
A/m
m)
Gate Bias (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0L
g = 25 nm
SS~ 72 mV/dec.
SS~ 77 mV/dec.
Ion= 500 mA/mm at Ioff
=100 nA/mm
and VD=0.5V
10 100
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
S. Lee, VLSI 2014
J. Lin, IEDM 2013
T. Kim, IEDM 2013
Intel, IEDM 2009
J. Gu, IEDM 2012
D. Kim, IEDM 2012
I on (
mA
/mm
)
Gate Length (nm)
VDS
= 0.5 V
Ioff
=100 nA/mm
HP = High Performance: Ioff =100 nA/mm
GP = General Purpose: Ioff =1 nA/mm
LP = Low Power: Ioff =30 pA/mm
ULP = Ultra Low Power: Ioff =10 pA/mm
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III-V MOSFET
*Heavy elements look brighter Courtesy of S. Kraemer (UCSB) Lee et al., 2014 VSLI Symposium
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III-V MOSFET
Courtesy of S. Kraemer (UCSB)
Huang et al., 2015 DRC
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Reducing leakage: Ultra-thin channel
139
10 100
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
S. Lee, VLSI 2014
J. Lin, IEDM 2013
T. Kim, IEDM 2013
Intel, IEDM 2009
J. Gu, IEDM 2012
D. Kim, IEDM 2012
I on (
mA
/mm
)
Gate Length (nm)
VDS
= 0.5 V
Ioff
=100 nA/mm
S. Lee et al., VLSI 2014
-0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.510
-7
10-6
10-5
10-4
10-3
10-2
10-1
100
101
DIBL = 76 mV/V
VT = -85 mV at 1 mA/mm
SSmin
~ 72 mV/dec. (at VDS
= 0.1 V)
SSmin
~ 77 mV/dec. (at VDS
= 0.5 V)
Lg = 25 nm
VDS
= 0.1 to 0.7 V
0.2 V increment
Cu
rre
nt
De
ns
ity
(m
A/m
m)
Gate Bias (V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.70.0
0.2
0.4
0.6
0.8
1.0
1.2
Cu
rre
nt
De
ns
ity
(m
A/m
m)
Drain Bias (V)
Ron
= 303 Ohm-mm
at VGS
= 0.7 V
VGS
= -0.4 V to 0.7 V
0.1 V increment
0.01 0.1 160
70
80
90
100
110
120 [2]
[4]
[3]
[7]
[1]
[6]
[5]
Solid: VDS
= 0.5 V
Open: VDS
= 0.1 V
Gate Length (mm)
SS
min (
mV
/de
c.)
This work
[1] Lin IEDM 2013,[2] T.-W. Kim IEDM 2013,[3] Chang IEDM 2013,[4] Kim IEDM 2013 [5] Lee APL 2013 (UCSB), [6] D. H. Kim IEDM 2012,[7] Gu IEDM 2012,[8] Radosavljevic IEDM 2009
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On-state comparison: 2.5 nm vs. 5.0 nm-thick InAs channel
0.01 0.1 10.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8InAs channel thickness
2.5 nm
5.0 nm
VDS
= 0.5 V
Gate Length (mm)
Pe
ak
gm (
mS
/mm
)
0 1 2 3 4 5 6 70
200
400
600
800
1000
1200
x 1012
me
ff (
cm
2/s
-V)
Carrier Density (/cm2)
2.5 nm InAs
5.0 nm InAs
-0.2 0.0 0.2 0.4 0.60.0
0.5
1.0
1.5
2.0
2.5
Cox
= 4.2 mF/cm2
EOT= 0.8 nm
W/L= 25mm/21 mm
Freq: 200kHz
2.5 nm InAs
5.0 nm InAs
Ga
te C
ap
ac
ita
nc
e (
mF
/cm
2)
Gate Bias (V)
0
1
2
3
4
5
6
7
x 1
01
2
Ca
rrie
r D
en
sit
y (
/cm
2)
0.4
0.2
-0.2
0.0
-0.4
-0.6
0.6
0.8
EF
E1En
erg
y (
eV
)
Position (nm)10 20 30
EF
E1
Position (nm)10 20 30
~1.25 nm ~2.5 nm
2.5 nm thick 5 nm thick
1D-Possion Schrodinger solver (coded by W. Frensley, UT Dallas)
140
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Wrap-Up
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What are the challenges
Small dimensions Thin semiconductor layers (2-3nm) Extremely low resistance contacts High current densities Very thin dielectrics Available semiconductor states (III-Vs) Resistances in interconnects and electrodes
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Where lies the future of electronics ?
"End of the scaling roadmap" "More than Moore"
tubes bipolar transistors field-effect transistors electrostatic barrier
Time for a new approach ?
Gravitonics ?
Quarkonics ?
Mechanics ? 1000's of heavy Nuclei ...
Magnetics ? F ~ v1v2/c
2→ weak!
Charge-control: fundamentally best electrons are light electrostatic force: strong & long-range
The future of electronics: classic charge-control devices few-nm dimensions, 1012-scale integration multi-THz bandwidths
electromagnetic waves: strong, long-range → electromagnetic interconnects (wires !) are best: efficient, dense Neutrinonics ?
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(backup slides follow)