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Document Number: 81810 For technical questions, contact: [email protected] www.vishay.comRev. 1.2, 25-Jun-09 1
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
TSHG5210Vishay Semiconductors
DESCRIPTIONTSHG5210 is an infrared, 850 nm emitting diode in GaAlAsdouble hetero (DH) technology with high radiant power andhigh speed, molded in a clear, untinted plastic package.
FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS Infrared radiation source for operation with CMOS
cameras
High speed IR data transmission Smoke-automatic fire detectors
NoteTest conditions see table Basic Characteristics
NoteMOQ: minimum order quantity
NoteTamb = 25 C, unless otherwise specified
94 8390
PRODUCT SUMMARYCOMPONENT Ie (mW/sr) (deg) p (nm) tr (ns)TSHG5210 230 10 850 20
ORDERING INFORMATIONORDERING CODE PACKAGING REMARKS PACKAGE FORMTSHG5210 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGSPARAMETER TEST CONDITION SYMBOL VALUE UNITReverse voltage VR 5 VForward current IF 100 mAPeak forward current tp/T = 0.5, tp = 100 s IFM 200 mASurge forward current tp = 100 s IFSM 1 APower dissipation PV 180 mWJunction temperature Tj 100 COperating temperature range Tamb - 40 to + 85 CStorage temperature range Tstg - 40 to + 100 CSoldering temperature t 5 s, 2 mm from case Tsd 260 CThermal resistance junction/ambient J-STD-051, leads 7 mm,
soldered on PCB RthJA 230 K/W
-
www.vishay.com For technical questions, contact: [email protected] Document Number: 818102 Rev. 1.2, 25-Jun-09
TSHG5210Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
NoteTamb = 25 C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
200
0 10 20 30 40 50 60 70 80 90 100
21142 Tamb - Ambient Temperature (C)
P V - Po
we
r D
issi
patio
n (m
W)
RthJA
= 230 K/W
0
20
40
60
80
100
120
0 10 20 30 40 50 60 70 80 90 100Tamb - Ambient Temperature (C)21143
I F - Fo
rwa
rd C
urr
en
t (mA)
RthJA
= 230 K/W
BASIC CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltageIF = 100 mA, tp = 20 ms VF 1.5 1.8 V
IF = 1 A, tp = 100 s VF 2.3 VTemperature coefficient of VF IF = 1 mA TKVF - 1.8 mV/KReverse current VR = 5 V IR 10 AJunction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 125 pF
Radiant intensityIF = 100 mA, tp = 20 ms Ie 140 230 420 mW/sr
IF = 1 A, tp = 100 s Ie 2300 mW/srRadiant power IF = 100 mA, tp = 20 ms e 55 mWTemperature coefficient of e IF = 100 mA TKe - 0.35 %/KAngle of half intensity 10 degPeak wavelength IF = 100 mA p 820 850 880 nmSpectral bandwidth IF = 100 mA 40 nmTemperature coefficient of p IF = 100 mA TKp 0.25 nm/KRise time IF = 100 mA tr 20 nsFall time IF = 100 mA tf 13 nsCut-off frequency IDC = 70 mA, IAC = 30 mA pp fc 18 MHzVirtual source diameter d 3.7 mm
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Document Number: 81810 For technical questions, contact: [email protected] www.vishay.comRev. 1.2, 25-Jun-09 3
TSHG5210High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double HeteroVishay Semiconductors
BASIC CHARACTERISTICSTamb = 25 C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
tP - Pulse Duration (ms)16031
tP/T = 0.01
0.05
0.2
0.5
0.1
0.02
Tamb < 50 C
I F - Fo
rwa
rd C
urr
en
t (mA)
18873
I F - Fo
rward
Curr
ent (m
A)
1000
100
10
1
VF - Forward Voltage (V)0 2 4
tP = 100 stP/T = 0.001
1 3
1
10
100
1000
10 000
1 10 100 100021307 IF - Forward Current (mA)
I e - R
adia
nt In
tens
ity (m
W/s
r)
tP = 0.1 mstP/T = 0.001
0.1
1
10
100
1000
1 1 0 100 1000 16971 I F - Forward Current (mA)
- R
adia
nt P
owe
r (m
W)
e
800 850- Wavelength (nm)
90016972
0
0.25
0.5
0.75
1.0
1.25
e, re
l - R
elat
ive
Rad
iant
Pow
er
21111 0.6 00.20.4
0.9
0.8
030
10 20
40
50
60
7080
0.7
1.0
I e re
l - R
elat
ive
Rad
iant
Inte
nsity
- An
gula
r Dis
plac
emen
t
-
www.vishay.com For technical questions, contact: [email protected] Document Number: 818104 Rev. 1.2, 25-Jun-09
TSHG5210Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
(4.7)
12.5
0
.3
A C
35.5
0
.55
< 0
.7
1.1 0.25
0.5 + 0.15- 0.05
5 0.15
2.54 nom.
0.5 + 0.15- 0.05
5
.8
0.1
5
8.7
0.
3
7.7
0.
15
1 m
in.
Area not plane
technical drawingsaccording to DINspecifications
R 2.49 (sphere)
6.544-5258.02-4Issue: 6; 19.05.0995 10916
-
Document Number: 91000 www.vishay.comRevision: 18-Jul-08 1
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