Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
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Transcript of Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)
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Lecture 6
OUTLINE• Semiconductor Fundamentals (cont’d)– Continuity equations– Minority carrier diffusion equations– Minority carrier diffusion length– Quasi-Fermi levels
Reading: Pierret 3.4-3.5; Hu 4.7
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Derivation of Continuity Equation• Consider carrier-flux into/out-of an infinitesimal volume:
Jn(x) Jn(x+dx)
dx
Area A, volume Adx
AdxnAdxxJAxJqt
nAdxn
nn
)()(1
EE130/230M Spring 2013 Lecture 6, Slide 2
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EE130/230M Spring 2013 Lecture 6, Slide 3
n
n nxxJ
qtn
)(1
Lp
p GpxxJ
qtp
)(1
ContinuityEquations:
dxxxJxJdxxJ n
nn
)()()(
Ln
n GnxxJ
qtn )(1
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Derivation of Minority Carrier Diffusion Equations• The minority carrier diffusion equations are derived from the
general continuity equations, and are applicable only for minority carriers.
• Simplifying assumptions:1. The electric field is small, such that
in p-type material
in n-type material
2. n0 and p0 are independent of x (i.e. uniform doping)
3. low-level injection conditions prevail
xnqD
xnqDnqJ nnnn
xpqD
xpqDpqJ pppp
EE130/230M Spring 2013 Lecture 6, Slide 4
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EE130/230M Spring 2013 Lecture 6, Slide 5
• Starting with the continuity equation for electrons:
L
nn Gn
xnnqD
xqtnn 1 00
Ln
n GnxnD
tn 2
2
Ln
n GnxxJ
qtn )(1
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Carrier Concentration Notation
EE130/230M Spring 2013 Lecture 6, Slide 6
• The subscript “n” or “p” is used to explicitly denote n-type or p-type material, e.g.pn is the hole (minority-carrier) concentration in n-type mat’l
np is the electron (minority-carrier) concentration in n-type mat’l
Lp
nnp
n
Ln
ppn
p
GpxpD
tp
Gn
xn
Dtn
2
2
2
2
• Thus the minority carrier diffusion equations are
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Simplifications (Special Cases)
• Steady state:
• No diffusion current:
• No R-G:
• No light:
0 0
tp
tn np
0 0 2
2
2
2
xpD
xn
D np
pn
0 0
p
n
n
p pn
0 LG
EE130/230M Spring 2013 Lecture 6, Slide 7
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Lp is the hole diffusion length: ppp DL
Example• Consider an n-type Si sample illuminated at one end:– constant minority-carrier injection at x = 0– steady state; no light absorption for x > 0
0)0( nn pp
EE130/230M Spring 2013 Lecture 6, Slide 8
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The general solution to the equation
is
where A, B are constants determined by boundary conditions:
Therefore, the solution is
2p
2
2
Lp
xp nn
pp LxLxn BeAexp //)(
0)( np
)0( 0nn pp
pLxnn epxp /
0)( EE130/230M Spring 2013 Lecture 6, Slide 9
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• Physically, Lp and Ln represent the average distance that minority carriers can diffuse into a sea of majority carriers before being annihilated.
• Example: ND = 1016 cm-3; p = 10-6 s
Minority Carrier Diffusion Length
EE130/230M Spring 2013 Lecture 6, Slide 10
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• Whenever n = p 0, np ni2. However, we would like to
preserve and use the relations:
• These equations imply np = ni2, however. The solution is to
introduce two quasi-Fermi levels FN and FP such that
Quasi-Fermi Levels
/)( kTEEi
iFenn /)( kTEEi
Fienp
/)( kTEFi
iNenn /)( kTFEi
Pienp
EE130/230M Spring 2013 Lecture 6, Slide 11
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Example: Quasi-Fermi LevelsConsider a Si sample with ND = 1017 cm-3 and n = p = 1014 cm-3.
What are p and n ?
What is the np product ?
EE130/230M Spring 2013 Lecture 6, Slide 12
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• Find FN and FP :
iiP n
pkTEF ln
iiN n
nkTEF ln
EE130/230M Spring 2013 Lecture 6, Slide 13
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Summary• The continuity equations are established based on
conservation of carriers, and therefore hold generally:
• The minority carrier diffusion equations are derived from the continuity equations, specifically for minority carriers under certain conditions (small E-field, low-level injection, uniform doping profile):
Lp
nL
n
n GpxxJ
qtpGn
xxJ
qtn )(1 )(1
Lp
nnP
nL
n
ppN
p GpxpD
tpG
nxn
Dtn
2
2
2
2
EE130/230M Spring 2013 Lecture 6, Slide 14