Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

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Lecture 6 OUTLINE • Semiconductor Fundamentals (cont’d) – Continuity equations – Minority carrier diffusion equations – Minority carrier diffusion length – Quasi-Fermi levels Reading : Pierret 3.4-3.5; Hu 4.7

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Derivation of Continuity Equation Consider carrier-flux into/out-of an infinitesimal volume: Area A, volume Adx Jn(x) Jn(x+dx) dx EE130/230M Spring 2013 Lecture 6, Slide 2

Transcript of Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Page 1: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Lecture 6

OUTLINE• Semiconductor Fundamentals (cont’d)– Continuity equations– Minority carrier diffusion equations– Minority carrier diffusion length– Quasi-Fermi levels

Reading: Pierret 3.4-3.5; Hu 4.7

Page 2: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Derivation of Continuity Equation• Consider carrier-flux into/out-of an infinitesimal volume:

Jn(x) Jn(x+dx)

dx

Area A, volume Adx

AdxnAdxxJAxJqt

nAdxn

nn

)()(1

EE130/230M Spring 2013 Lecture 6, Slide 2

Page 3: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

EE130/230M Spring 2013 Lecture 6, Slide 3

n

n nxxJ

qtn

)(1

Lp

p GpxxJ

qtp

)(1

ContinuityEquations:

dxxxJxJdxxJ n

nn

)()()(

Ln

n GnxxJ

qtn )(1

Page 4: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Derivation of Minority Carrier Diffusion Equations• The minority carrier diffusion equations are derived from the

general continuity equations, and are applicable only for minority carriers.

• Simplifying assumptions:1. The electric field is small, such that

in p-type material

in n-type material

2. n0 and p0 are independent of x (i.e. uniform doping)

3. low-level injection conditions prevail

xnqD

xnqDnqJ nnnn

xpqD

xpqDpqJ pppp

EE130/230M Spring 2013 Lecture 6, Slide 4

Page 5: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

EE130/230M Spring 2013 Lecture 6, Slide 5

• Starting with the continuity equation for electrons:

L

nn Gn

xnnqD

xqtnn 1 00

Ln

n GnxnD

tn 2

2

Ln

n GnxxJ

qtn )(1

Page 6: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Carrier Concentration Notation

EE130/230M Spring 2013 Lecture 6, Slide 6

• The subscript “n” or “p” is used to explicitly denote n-type or p-type material, e.g.pn is the hole (minority-carrier) concentration in n-type mat’l

np is the electron (minority-carrier) concentration in n-type mat’l

Lp

nnp

n

Ln

ppn

p

GpxpD

tp

Gn

xn

Dtn

2

2

2

2

• Thus the minority carrier diffusion equations are

Page 7: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Simplifications (Special Cases)

• Steady state:

• No diffusion current:

• No R-G:

• No light:

0 0

tp

tn np

0 0 2

2

2

2

xpD

xn

D np

pn

0 0

p

n

n

p pn

0 LG

EE130/230M Spring 2013 Lecture 6, Slide 7

Page 8: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Lp is the hole diffusion length: ppp DL

Example• Consider an n-type Si sample illuminated at one end:– constant minority-carrier injection at x = 0– steady state; no light absorption for x > 0

0)0( nn pp

EE130/230M Spring 2013 Lecture 6, Slide 8

Page 9: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

The general solution to the equation

is

where A, B are constants determined by boundary conditions:

Therefore, the solution is

2p

2

2

Lp

xp nn

pp LxLxn BeAexp //)(

0)( np

)0( 0nn pp

pLxnn epxp /

0)( EE130/230M Spring 2013 Lecture 6, Slide 9

Page 10: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

• Physically, Lp and Ln represent the average distance that minority carriers can diffuse into a sea of majority carriers before being annihilated.

• Example: ND = 1016 cm-3; p = 10-6 s

Minority Carrier Diffusion Length

EE130/230M Spring 2013 Lecture 6, Slide 10

Page 11: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

• Whenever n = p 0, np ni2. However, we would like to

preserve and use the relations:

• These equations imply np = ni2, however. The solution is to

introduce two quasi-Fermi levels FN and FP such that

Quasi-Fermi Levels

/)( kTEEi

iFenn /)( kTEEi

Fienp

/)( kTEFi

iNenn /)( kTFEi

Pienp

EE130/230M Spring 2013 Lecture 6, Slide 11

Page 12: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Example: Quasi-Fermi LevelsConsider a Si sample with ND = 1017 cm-3 and n = p = 1014 cm-3.

What are p and n ?

What is the np product ?

EE130/230M Spring 2013 Lecture 6, Slide 12

Page 13: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

• Find FN and FP :

iiP n

pkTEF ln

iiN n

nkTEF ln

EE130/230M Spring 2013 Lecture 6, Slide 13

Page 14: Lecture 6 OUTLINE Semiconductor Fundamentals (cont’d)

Summary• The continuity equations are established based on

conservation of carriers, and therefore hold generally:

• The minority carrier diffusion equations are derived from the continuity equations, specifically for minority carriers under certain conditions (small E-field, low-level injection, uniform doping profile):

Lp

nL

n

n GpxxJ

qtpGn

xxJ

qtn )(1 )(1

Lp

nnP

nL

n

ppN

p GpxpD

tpG

nxn

Dtn

2

2

2

2

EE130/230M Spring 2013 Lecture 6, Slide 14