Lecture 10: Circuit Families. CMOS VLSI DesignCMOS VLSI Design 4th Ed. 10: Circuit Families2 Outline...

Lecture 10:

Circuit Families

CMOS VLSI DesignCMOS VLSI Design 4th Ed.10: Circuit Families 2

Outline Pseudo-nMOS Logic (Ratioed Logic) Dynamic Logic Pass Transistor Logic


Introduction What makes a circuit fast?

– I = C dV/dt -> tpd (C/I) V

– low capacitance– high current– small swing

Logical effort is proportional to C/I pMOS are the enemy!

– High capacitance for a given current Can we take the pMOS capacitance off the input? Various circuit families try to do this…

B

A

11

4

4

Y

CMOS VLSI DesignCMOS VLSI Design 4th Ed.4

Ratioed Logic

VDD

VSS

PDNIn1In2In3

F

RLLoad

VDD

VSS

In1In2In3

F

VDD

VSS

PDNIn1In2In3

F

VSS

PDN

Resistive DepletionLoad

PMOSLoad

(a) resistive load (b) depletion load NMOS (c) pseudo-NMOS

VT < 0

Goal: to reduce the number of devices over complementary CMOS


Ratioed LogicVDD

VSS

PDN

In1

In2

In3

F

RLLoad

ResistiveN transistors + Load

• VOH = VDD

• VOL = RPN

RPN + RL

• Assymetrical response

• Static power consumption

•

• tpL= 0.69 RLCL


Active LoadsVDD

VSS

In1In2In3

F

VDD

VSS

PDN

In1In2In3

F

VSS

PDN

Depletion

LoadPMOSLoad

depletion load NMOS pseudo-NMOS

VT < 0


Pseudo-nMOS In the old days, nMOS processes had no pMOS

– Instead, use pull-up transistor that is always ON In CMOS, use a pMOS that is always ON

– Ratio issue– Make pMOS about ¼ effective strength of

pulldown network

Vout

Vin

16/2

P/2

Ids

load

0 0.3 0.6 0.9 1.2 1.5 1.8

0

0.3

0.6

0.9

1.2

1.5

1.8

P = 24

P = 4

P = 14

Vin

Vout

CMOS VLSI DesignCMOS VLSI Design 4th Ed.

Pseudo-nMOS

10: Circuit Families 8


Pseudo-NMOS VTC



Pseudo-nMOS Design

Size of PMOS VOLStatic Power Dissipation

tpLH

4 0.693 V 564 W 14 ps

2 0.273 V 298 W 56 ps

1 0.133 V 160 W 123 ps

0.5 0.064 V 80 W 268 ps

0.25 0.031 V 41 W 569 ps



Pseudo-nMOS Gates Design for unit current on output

to compare with unit inverter. pMOS fights nMOS Iout = 4I/3 – I/3

Inverter NAND2 NOR2

AY

B

AY

A B

gu =gd =gavg =pu =pd =pavg =

Y



finputs

Y


Pseudo-nMOS Gates Design for unit current on output

to compare with unit inverter. pMOS fights nMOS

Inverter NAND2 NOR2

4/3

2/3

AY

8/3

8/3

2/3

B

AY

A B 4/34/3

2/3

gu = 4/3gd = 4/9gavg = 8/9pu = 6/3pd = 6/9pavg = 12/9

Y



finputs

Y


Pseudo-nMOS Design Ex: Design a k-input AND gate using pseudo-nMOS.

Estimate the delay driving a fanout of H

G = 1 * 8/9 = 8/9 F = GBH = 8H/9 P = 1 + (4+8k)/9 = (8k+13)/9 N = 2 D = NF1/N + P =

In1

Ink

Y

Pseudo-nMOS1

1 H

4 2 8 13

3 9

H k


Pseudo-nMOS Power Pseudo-nMOS draws power whenever Y = 0

– Called static power P = IDDVDD

– A few mA / gate * 1M gates would be a problem– Explains why nMOS went extinct

Use pseudo-nMOS sparingly for wide NORs Turn off pMOS when not in use

A BY

C

en


Ratio Example The chip contains a 32 word x 48 bit ROM

– Uses pseudo-nMOS decoder and bitline pullups– On average, one wordline and 24 bitlines are high

Find static power drawn by the ROM

– Ion-p = 36 A, VDD = 1.0 V

Solution:pull-up pull-up

static pull-up

36 μW

(31 24) 1.98 mW

DDP V I

P P


Pseudo-NMOS Design Pseudo-nMOS gates will not operate correctly if

VOL>VIL of the driven gate.

This is most likely in the SF corner. Conservative design requires extra weak pMOS. Another choice is to use replica biasing. Idea comes from analog design. Replica biasing allows 1/3 the current ratio rather

than the conservative ¼ ratio of earlier.



Replica Biasing



Ganged CMOS



Ganged CMOS

A B N1 P1 N2 P2 Y

0 0 OFF ON OFF ON 1

0 1 OFF ON ON OFF ~0

1 0 ON OFF OFF ON ~0

1 1 ON OFF ON OFF 0



Improved Loads

A B C D

F

CL

M1M2 M1 >> M2Enable

VDD

Adaptive Load


Improved Loads



Improved Loads (2)

Differential Cascode Voltage Switch Logic (DCVSL)


DCVSL Example

B

A A

B B B

Out

Out

XOR-NXOR gate


DCVSL Example


DCVSL Transient Response



Pass-Transistor LogicIn

puts

Switch

Network

OutOut

A

B

B

B

• N transistors

• No static consumption


Example: AND Gate



NMOS-Only Logic



NMOS-Only Switch


NMOS Only Logic: Level Restoring Transistor

• Advantage: Full Swing

• Restorer adds capacitance, takes away pull down current at X

• Ratio problem


Restorer Sizing



LEAP LEAn integration with Pass transistors Get rid of pMOS transistors

– Use weak pMOS feedback to pull fully high– Ratio constraint

B

S

S

AYL


Complementary Pass Transistor Logic

A

B

A

B

B B B B

A

B

A

B

F=AB

F=AB

F=A+B

F=A+B

B B

A

A

A

A

F=AÝ

F=AÝ

OR/NOR EXOR/NEXORAND/NAND

F

F

Pass-Transistor

Network

Pass-TransistorNetwork

AABB

AABB

Inverse

(a)

(b)


CPL Complementary Pass-transistor Logic

– Dual-rail form of pass transistor logic– Avoids need for ratioed feedback– Optional cross-coupling for rail-to-rail swing

B

S

S

S

S

A

B

AY

YL

L


Alternative CPL



Transmission Gate



Resistance of Transmission Gate

Vout

0 V

2.5 V

2.5 VRn

Rp

0.0 1.0 2.00

10

20

30

Vout, V

Res

ista

nce

, oh

ms

Rn

Rp

Rn || Rp


Pass Transistor Circuits

Use pass transistors like switches to do logic Inputs drive diffusion terminals as well as gates

CMOS + Transmission Gates:– 2-input multiplexer– Gates should be restoring

A

B

S

S

S

Y

A

B

S

S

S

Y


Pass-Transistor Based Multiplexer

AM2

M1

B

S

S

S F

VDD

GND

VDD

In1

In2

S S

S S


Transmission Gate XOR



Delay in Transmission Gate Networks



Delay Optimization


Transmission Gate Full Adder

A

B

P

Ci

VDDA

A A

VDD

Ci

A

P

AB

VDD

VDD

Ci

Ci

Co

S

Ci

P

P

P

P

P

Sum Generation

Carry Generation

Setup

Similar delays for sum and carry


Other Pass Transistor Families

DPTL (Differential Pass Transistor Logic) DPL (Double Pass Transistor Logic) EEPL (Energy Economized Pass Transistor Logic) PPL (Push-Pull Pass Transistor Logic) SRPL (Swing Restored Pass Transistor Logic) DCVSPG (Differential Cascode Voltage Switch with

Pass Gate Logic)


Pass Transistor Summary

Researchers investigated pass transistor logic for general purpose applications in the 1990’s– Benefits over static CMOS were small or negative– No longer generally used

However, pass transistors still have a niche in special circuits such as memories where they offer small size and the threshold drops can be managed


Single Clock 2-Phase System


T/2 T 3T/2


Shift Register


A

PHI

PHIBAR

PHIBAR

PHI

VDD VDD


Shift Register When = 1, data move through the first

transmission gate to the inverter.


€

τTG = RTGCL

CL = CTG + Cinv + Cline

When VA =1,

Vin t( ) = VDD 1 − e− t

τ TG ⎛ ⎝ ⎜

⎞ ⎠ ⎟

When VA = 0,

Vin t( ) = VDDe− t

τ TG


Charge Leakage


A

PHI

PHIBAR

CL


Charge Leakage


€

IL = ILn − ILp

CdVin

dt= −IL

dQstore

dt= ILp − ILn

Cstore =dQstore

dV


Charge Leakage Both Q and I are nonlinear Assume that I’s are constant.


€

Qstore = CstoreV

Cstore

dV

dt= ILp − ILn

V t( ) =ILp − ILn

Cstore

t +V 0( )

tmax =CstoreΔV

IL

fmin ≈1

2tmax

=IL

2CstoreΔV


Charge Sharing


PHI

PHIBAR

C2C1


Charge Sharing We can write

The more general case:


€

At t = 0, V1 = VDD ,V2 = 0, QT = C1VDD

At t = t f , QT = C1 + C2( )V f

V f =C1

C1 + C2

VDD

€

QT = CiVi 0( )i=1

N

∑ , QT = Cii=1

N

∑ ⎛

⎝ ⎜

⎞

⎠ ⎟V f

V f =

CiVi 0( )i=1

N

∑

Cii=1

N

∑


Dynamic CMOS In static circuits at every point in time (except

when switching) the output is connected to either GND or VDD via a low resistance path.– fan-in of n requires 2n (n N-type + n P-type)

devices

Dynamic circuits rely on the temporary storage of signal values on the capacitance of high impedance nodes.– requires on n + 2 (n+1 N-type + 1 P-type)

transistors


Dynamic Gate

In1

In2 PDN

In3

Me

Mp

Clk

Clk

Out

CL

Out

Clk

Clk

A

BC

Mp

Me

Two phase operation Precharge (Clk = 0) Evaluate (Clk = 1)

on

off

1

off

on

((AB)+C)


Conditions on Output Once the output of a dynamic gate is

discharged, it cannot be charged again until the next precharge operation.

Inputs to the gate can make at most one transition during evaluation.

Output can be in the high impedance state during and after evaluation (PDN off), state is stored on CL


Properties of Dynamic Gates

Logic function is implemented by the PDN only– number of transistors is N + 2 (versus 2N for static complementary

CMOS)

Full swing outputs (VOL = GND and VOH = VDD)

Non-ratioed - sizing of the devices does not affect the logic levels

Faster switching speeds– reduced load capacitance due to lower input capacitance (Cin)

– reduced load capacitance due to smaller output loading (Cout)

– no Isc, so all the current provided by PDN goes into discharging CL


Properties of Dynamic Gates

Overall power dissipation usually higher than static CMOS– no static current path ever exists between VDD and

GND (including Psc)– no glitching– higher transition probabilities– extra load on Clk

PDN starts to work as soon as the input signals exceed VTn, so VM, VIH and VIL equal to VTn

– low noise margin (NML)

Needs a precharge/evaluate clock


Dynamic Logic Dynamic gates uses a clocked pMOS pullup Two modes: precharge and evaluate

1

2A Y

4/3

2/3

AY

1

1

AY

Static Pseudo-nMOS Dynamic

Precharge Evaluate

Y

Precharge


The Foot What if pulldown network is ON during precharge? Use series evaluation transistor to prevent fight.

AY

foot

precharge transistor

Y

inputs

Y

inputs

footed unfooted

f f


Logical Effort

Inverter NAND2 NOR2

1

1

AY

2

2

1

B

AY

A B 11

1

gd = 1/3pd = 2/3

gd = 2/3pd = 3/3

gd = 1/3pd = 3/3

Y

2

1

AY

3

3

1

B

AY

A B 22

1

gd = 2/3pd = 3/3

gd = 3/3pd = 4/3

gd = 2/3pd = 5/3

Y

footed

unfooted

32 2


Issues in Dynamic Design 1: Charge Leakage

CL

Clk

Clk

Out

A

Mp

Me

Leakage sources

CLK

VOut

Precharge

Evaluate

Dominant component is subthreshold current


Solution to Charge Leakage

CL

Clk

Clk

Me

Mp

A

B

Out

Mkp

Same approach as level restorer for pass-transistor logic

Keeper


Issues in Dynamic Design 2: Charge Sharing

CL

Clk

Clk

CA

CB

B=0

A

OutMp

Me

Charge stored originally on CL is redistributed (shared) over CL and CA leading to reduced robustness


Charge Sharing Example

CL=50fF

Clk

Clk

A A

B B B !B

CC

Out

Ca=15fF

Cc=15fF

Cb=15fF

Cd=10fF


Charge Sharing

Mp

Me

VDD

Out

A

B = 0

CL

Ca

Cb

Ma

Mb

X

CLVDD CLVout t Ca VDD VTn VX – +=

or

Vout Vout t VDD–CaCL-------- VDD VTn VX

– –= =

Vout VDD

CaCa CL+----------------------

–=

case 1) if Vout < VTn

case 2) if Vout > VTnB 0

Clk

X

CL

Ca

Cb

A

Out

Mp

Ma

VDD

Mb

Clk Me


Solution to Charge Redistribution

Clk

Clk

Me

Mp

A

B

OutMkp

Clk

Precharge internal nodes using a clock-driven transistor (at the cost of increased area and power)


Issues in Dynamic Design 3: Backgate Coupling

CL1

Clk

Clk

B=0

A=0

Out1Mp

Me

Out2

CL2

In

Dynamic NAND Static NAND

=1=0

CMOS VLSI DesignCMOS VLSI Design 4th Ed. 70

Backgate Coupling Effect

-1

0

1

2

3

0 2 4 6

Vol

tage

Time, ns

Clk

In

Out1

Out2


Issues in Dynamic Design 4: Clock Feedthrough

CL

Clk

Clk

B

A

OutMp

Me

Coupling between Out and Clk input of the precharge device due to the gate to drain capacitance. So voltage of Out can rise above VDD. The fast rising (and falling edges) of the clock couple to Out.


Clock Feedthrough

-0.5

0.5

1.5

2.5

0 0.5 1

Clk

Clk

In1

In2

In3

In4

Out

In &Clk

Out

Time, ns

Vol

tage

Clock feedthrough

Clock feedthrough


Other Effects Capacitive coupling Substrate coupling Minority charge injection Supply noise (ground bounce)


Cascading Dynamic Gates

Clk

Clk

Out1

In

Mp

Me

Mp

Me

Clk

Clk

Out2

V

t

Clk

In

Out1

Out2V

VTn

Only 0 1 transitions allowed at inputs!


Monotonicity Dynamic gates require monotonically rising inputs

during evaluation– 0 -> 0– 0 -> 1– 1 -> 1– But not 1 -> 0

Precharge Evaluate

Y

Precharge

A

Output should rise but does not

violates monotonicity during evaluation

A


Monotonicity Woes But dynamic gates produce

monotonically falling outputs during evaluation

Illegal for one dynamic gate to drive another!

AX

Y

Precharge Evaluate

X

Precharge

A = 1

Y should rise but cannot

Y

X monotonically falls during evaluation

AX

Y

Precharge Evaluate

X

Precharge

A = 1

Y


Domino Logic

In1

In2 PDN

In3

Me

Mp

Clk

ClkOut1

In4 PDN

In5

Me

Mp

Clk

ClkOut2

Mkp

1 11 0

0 00 1


Domino Gates Follow dynamic stage with inverting static gate

– Dynamic / static pair is called domino gate– Produces monotonic outputs

Precharge Evaluate

W

Precharge

X

Y

Z

A

BC

C

AB

W XY Z =

XZH H

A

W

B C

X Y Z

domino AND

dynamicNAND

staticinverter


Domino Optimizations Each domino gate triggers next one, like a string of

dominos toppling over Gates evaluate sequentially but precharge in parallel Thus evaluation is more critical than precharge HI-skewed static stages can perform logic

S0

D0

S1

D1

S2

D2

S3

D3

S4

D4

S5

D5

S6

D6

S7

D7

YH


Dual-Rail Domino Domino only performs noninverting functions:

– AND, OR but not NAND, NOR, or XOR Dual-rail domino solves this problem

– Takes true and complementary inputs – Produces true and complementary outputs

sig_h sig_l Meaning

0 0 Precharged

0 1 ‘0’

1 0 ‘1’

1 1 invalid

Y_h

f

inputs

Y_l

f


Example: AND/NAND Given A_h, A_l, B_h, B_l Compute Y_h = AB, Y_l = AB Pulldown networks are conduction complements

Y_h

Y_l

A_h

B_hB_lA_l

= A*B= A*B


Example: XOR/XNOR Sometimes possible to share transistors

Y_h

Y_l

A_l

B_h

= A xor B

B_l

A_hA_lA_h= A xnor B


np-CMOS



NORA Logic



NP Domino



Zipper CMOS The NP-Domino or NORA logic is very susceptible to

noise and leakage. Zipper Domino has the same structure, but the

precharge transistors are left slightly ON during evaluation.



Leakage Dynamic node floats high during evaluation

– Transistors are leaky (IOFF 0)

– Dynamic value will leak away over time– Formerly miliseconds, now nanoseconds

Use keeper to hold dynamic node– Must be weak enough not to fight evaluation

A

H

2

2

1 kX

Y

weak keeper


Charge Sharing Dynamic gates suffer from charge sharing

B = 0

AY

x

Cx

CY

A

x

Y

Charge sharing noise

Yx Y DD

x Y

CV V V

C C

A

x

Y


Secondary Precharge Solution: add secondary precharge transistors

– Typically need to precharge every other node Big load capacitance CY helps as well

B

AY

x

secondaryprechargetransistor


Noise Sensitivity Dynamic gates are very sensitive to noise

– Inputs: VIH Vtn

– Outputs: floating output susceptible noise Noise sources

– Capacitive crosstalk– Charge sharing– Power supply noise– Feedthrough noise– And more!


Power

Domino gates have high activity factors– Output evaluates and precharges

• If output probability = 0.5, = 0.5– Output rises and falls on half the cycles

– Clocked transistors have = 1

– For a 4 input NAND, CMOS = 3/16, Dynamic = 1/4

Leads to very high power consumption However, glitching does not occur in dynamic logic. The load capacitances are lower.


Completion Detection



Keepers Keeper design is not trivial. Many alternatives have been suggested.



Conventional Keeper



Weak Keepers



Differential Keeper



Burn-in Conditional Keeper



Adaptive Keeper



Leakage Current Replica Keeper



Footed and Footless Domino



8-input Domino AND



MODL It is often necessary to compute multiple functions

where one is a subfunction of the other or shares a subfunction.

One very typical example is the carry in addition:

10: Circuit Families 103€

c1 = g1 + p1c0

c2 = g2 + p2 g1 + p1c0( )

c3 = g3 + p3 g2 + p2 g1 + p1c0( )( )

c4 = g4 + p4 g3 + p3 g2 + p2 g1 + p1c0( )( )( )


MODL Carry Chains



MODL Beware of sneak paths. Certain inputs must be mutually exclusive.



Domino Summary Domino logic is attractive for high-speed circuits

– 1.3 – 2x faster than static CMOS– But many challenges:

• Monotonicity, leakage, charge sharing, noise Widely used in high-performance microprocessors in

1990s when speed was king Largely displaced by static CMOS now that power is

the limiter Still used in memories for area efficiency


2-input MUX



Which Logic Style? Ease of design Robustness Area Speed Power



Which Logic Style?

Ease of Design

Robust-ness

Area Speed Power

Static Very good Very good Bad Bad Good

Pseudo-nMOS

Average Average Good Good Very bad

Pass transistor

Difficult Average Good (for specific circuits)

Good (for specific circuits)

average

Dynamic logic

Very difficult

Very bad Good Good average



Circuit Pitfalls Threshold drops Ratio failures Charge sharing Power supply noise Coupling Minority carrier injection Back-gate coupling Diffusion input noise sensitivity Race conditions Delay matching



Circuit Pitfalls Metastability Hot spots Soft errors Process sensitivity



Threshold Drops



Ratio Failures



Power Supply Noise



Hot Spots Caused by nonuniform power dissipation even when

the overall power consumption is within budget. Causes variation in delay between gates. Full-chip temperature simulation is required.



Minority Carrier Injection



Minority Carrier Injection

Sometimes, a node voltage can momentarily exceed power supply voltages.

Then, the drain-body junction becomes forward biased.

Noise tools can identify potential problems.



Diffusion Input Noise Sensitivity



Diffusion Input Noise Sensitivity

Exposed diffusion inputs are particularly sensitive to noise.

Standard cell latches should be built with buffered inputs.

In data paths, one can still utilize exposed diffusion inputs since one knows the structure.



Domino Noise Budgets Charge leakage Charge sharing Capacitive coupling Back-gate coupling Minority carrier injection Power supply noise Soft errors Noise feedthrough Process corner effects



Domino Noise Budgets

Source Dynamic Output Dynamic Input

Charge Sharing 10 n/a

Coupling 17 7

Supply Noise 5 5

Feedthrough Noise 5 7

Total 37% 19%



Silicon-on-Insulator Circuit Design

SOI technology has been around for decades as research.

It was adopted by IBM for PowerPC in 1998. Potential for higher performance and lower power

consumption. Higher manufacturing cost and more complicated

circuit design due to unusual transistor behavior. There is no bulk, but insulator. Body is floating, thus changes in Vt.



SOI Inverter Cross Section



SOI Process Electron Micrograph



SOI Circuit Design SOI devices are characterized as

– Partially Depleted (PD)– Fully Depleted (FD)

In FD SOI, the body is thinner than the channel depletion width, so the body charge is fixed. Thus, the body voltage does not change.

In PD SOI, the body is thicker and its voltage can vary depending on how much charge is present. This varying body voltage changes Vt.

FD SOI is difficult to manufacture.



Charge Paths in SOI Body



Charge Paths There are two paths through which charge can build up in the

body:

– Reverse biased drain-to-body (Ddb) and possibly source-to-body (Dsb) junctions.

– High-energy carriers causing impact ionization, creating electron-hole pairs. Some electrons are injected into the gate or gate oxide, leaving holes behind.

The charge can exit the body through two paths:

– As body voltage increases, Dsb becomes slightly forward biased. Eventually, this cancels the first mechanism above.

– A rising gate or drain voltage capacitively couples the body voltage upward, too. This strongly forward biases Dsb junction and charge spills out.



SOI Advantages Lower diffusion capacitance.

– Smaller parasitic delay and lower power consumption.

Potential for lower threshold voltages.

– Vt is dependent on channel length for bulk CMOS. Thus, worst case conditions are selected in determining Vt. In SOI, variations are smaller, thus smaller Vt can be chosen.

Lower n, hence better subthreshold slope.– n decreases from 1.5 to about 1.2.

SOI is immune to latchup.10: Circuit Families 128


SOI Disadvantages PD SOI suffers from history effect.

– 8% variation in gate delay.– Can be a problem for sensitive analog circuits.

Presence of a parasitic bipolar transistor.– If the source and drain are held high for an

extended period of time while the gate is low, the base will float high due to leakage.

– If the source is pulled low, the npn turns ON, creating a pulse of current.

– This is sometimes called pass-gate leakage. Self-heating => oxide is an insulator for heat as well.10: Circuit Families 129


Parasitic BJT in SOI



Implications for Circuit Styles

SOI is attractive for fast CMOS logic.– Lower delay, lower power consumption.

Standard CMOS design suffers slightly from history effect.

Dynamic circuits suffer from pass-gate leakage. Many precautions must be taken.

Analog circuits suffer from threshold mismatches.



Subthreshold Circuit Design

As discussed earlier, the minimum energy point is at a region where VDD < Vt.

Typically, around 300 mV. Frequency is in the high kHz or low MHz region. Vt variations are very important, use large transistors

where possible. Use standard CMOS, but avoid complex gates. Not

more complex than NAND3. Due to variations, ON current in one branch may be smaller than OFF current in the series stack.



Pitfalls and Fallacies Failing to plan for advances in technology Comparing a well-tuned new circuit to a poor

example of engineering practice Ignoring driver resistance when characterizing pass-

transistor circuits. Reporting only part of the delay of a circuit Making outrageous claims about performance Building circuits without adequate verification tools. Sizing subthreshold circuits for speed



Historical Perspective Ratioed and dynamic circuits are actually earlier

than CMOS. In an NMOS process, PMOS transistors were not

available. Dynamic gates were proposed in early 1970’s. Even with CMOS, domino gates were still used for

area and power advantages, for example in BELLMAC-32A from Bell Labs.– The world’s first 32-bit microprocessor



Historical Perspective By the time of Alpha 21264, leakage had become so

important that keepers had to be used. – 1996, superscalar, out-of-order execution

180 nm Pentium 4 used self-resetting domino. 90 nm Pentium 4 used extraordinarily complex LVS

logic. Custom design of 6.8M transistors. Japanese engineers favored pass transistor logic all

through 1990’s. IBM has always relied on static CMOS. Hundreds of logic families in academic literature, but

very few have found application in industry.


Lecture 10: Circuit Families. CMOS VLSI DesignCMOS VLSI Design 4th Ed. 10: Circuit Families2 Outline...

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Transcript of Lecture 10: Circuit Families. CMOS VLSI DesignCMOS VLSI Design 4th Ed. 10: Circuit Families2 Outline...