Lec31-LogicGateCMOS

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    DIGITAL CIRCUITS AND

    Electronic & Communication Engineering

    Danang University of Technology

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    Logic value 1

    Undefined

    Voltage

    VDD

    V1,min

    - Positive/Negative logicsystem-V0,max: max. voltage level that

    a logic circuit recognizes as low- V1,min: min. voltage level that alogic circuit recognizes as high

    Voltage Levels

    Logic value 0

    V0,max

    VSS (Gnd)

    Logic values as voltage levels.

    - Exact V0,max ,V1,min valuesdepend on used technology,normally 40% VDD and 60% VDD

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    DrainSource

    x = "low" x = "high"

    (a) A simple switch controlled by the input x

    Gate

    - Most popular used transistoris MOSFET: NMOS & PMOS

    - 4 electrical terminals. In logiccircuits the substrateterminal isconnected to Gn for NMOS

    NMOS

    NMOS transistor as a switch.

    VDVS

    (b) NMOS transistor

    (c) Simplified symbol for an NMOS transistor

    VG

    Substrate (Body)

    - No physical differencebetween sourceand drainterminals

    - By convention, the sourceterminal is the node with lowervoltage for NMOS

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    - Silicon is an electrical semiconductor.- A transistor is fabricated by creating areas in the siliconsubstrate that have an excess of either positive or negative

    electrical charge.- The gate terminal is made of poly-silicon which ispreferable to metal as it can be fabricated with extremely

    Remarks

    .- The gate is electrically isolated from the rest of transistor bya layer of SiO2.- Transistors operation is governed by electrical fields caused

    by voltages applied to its terminal

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    SiO2

    VS

    0 V=

    V G 0 V=

    VD

    NMOS off

    NMOS transistor when turned off: back-to-back diodes representvery high resistance (1012 ohm) between drain & source

    ++++++ ++++ ++++++ +++ ++++++++++++ ++++++ ++++++

    +++++++++ +++++++++

    +++++++++++ +++++++++++

    Drain (type n)Source (type n)

    Substrate (type p)

    (a) WhenVGS

    = 0 V, the transistor is off

    ++++++

    ++++++++++++

    ++++++

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    SiO2

    VDD

    VD

    0 V=

    VG 5 V=

    VS

    0 V=

    NMOS on

    ++++++ ++++++

    +++++++++ +++++++++++++++++++++ +++++++++++++++++

    Channel (type n)

    (b) WhenVGS= 5 V, the transistor is on

    ++ +++++++

    NMOS transistor when turned on: If the gate-to-source

    voltage VGS is greater than a certain minimum positive voltage,called VT (typically 0,2 VDD), then the switch is closed.

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    -The positive voltage on the gate attracts free electronsexisting in the type-n source and drain terminals & otherareas of the transistor towards the gate. Because of SiO2

    layer, electrons gather in region of the substrate betweensource & drain terminals, which results into channelconnecting source & drain.

    Channel

    - The size of channel is determined by length L & width W

    +

    +

    (a) Small transistor

    L

    W1

    L

    W2

    (b) Larger transistor

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    Gate

    x = "high" x = "low"

    (a) A switch with the opposite behavior

    Drain Source

    - Most popular used transistoris MOSFET: NMOS & PMOS

    - 4 electrical terminals. In logiccircuits the substrateterminal isconnected to to VDDfor PMOS

    PMOS

    PMOS transistor as a switch.

    VG

    VDVS

    (b) PMOS transistor

    (c) Simplified symbol for a PMOS transistor

    Substrate (Body) - o p ys ca erencebetween sourceand drainterminals- By convention, the sourceterminal is the node with highervoltage for PMOS

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    (a) NMOS transistor

    VG

    VD

    VS= 0 V

    Closed switchwhenVG = VDD

    VD = 0 V

    Open switchwhenVG = 0 V

    VD

    - When the NMOS transistor isturned on, its drain is pulleddown to Gnd

    Operations

    NMOS and PMOS transistors in logic circuits.

    VS= VDD

    VD

    VG

    Open switch

    whenVG = VDD

    VD

    VDD

    Closed switch

    whenVG = 0 V

    VD = VDD

    VDD

    (b) PMOS transistor

    - When the PMOS transistor isturned on, its drain is pulled up

    to to VDD

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    Vx

    Vf

    R

    +

    -

    5 V

    Vx

    Vf

    VDD

    R

    - VX=0V, tr is turned off -->Vf=5V

    - When VX=5V, tr is turnedon, its drain is pulled downto Gnd --> V =0V

    NMOS NOT

    A NOT gate built using NMOStechnology.

    x f

    (c) Graphical symbols

    x f

    (a) Circuit diagram (b) Simplified circuit diagram

    - Exact Vf depends on R &tr., typically is 0.2V

    - R is used to limit thecurrent during turning on oftr. (problem?)

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    Vf

    VDD

    0

    0

    1

    1

    0

    1

    0

    1

    1

    1

    1

    0

    x1

    x2

    f

    Vx2

    Vx1

    - Series connection of NMOS tocreate the logic AND function- V

    X1= V

    X2=5V, tr is turned off --

    > Vf=5V- When VX=5V, trs are turnedon their drains are ulled down

    NMOS NAND

    NMOS realization of a NANDgate.

    (a) Circuit

    (c) Graphical symbols

    (b) Truth table

    f f

    x1

    x2

    x1

    x2

    to Gnd --> Vf will be closed to0V

    - If only one of trs is turned off,then Vf will be pulled up to 5V- R is used to limit the currentduring turning on of tr.

    (problem?)

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    Vx1Vx2

    Vf

    VDD

    0

    0

    1

    1

    0

    1

    0

    1

    1

    0

    0

    0

    x1

    x2 f

    - Parallel connection ofNMOS to create the logic

    NOR function- Either VX1= 5V or VX2=5V,Vf will be closed to 0V

    NMOS NOR

    NMOS realization of a NORgate.

    (a) Circuit

    (c) Graphical symbols

    (b) Truth table

    f f

    x1

    x2

    x1

    x2

    - -- f be pulled up to 5V

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    0 0 0

    x1 x2 f

    Vf

    VDD

    AVx1

    V

    VDD

    - AND realization by following aNAND gate with an Inverter

    NMOS AND

    NMOS realization of an AND gate.

    (a) Circuit

    (c) Graphical symbols

    (b) Truth table

    f f

    0

    11

    1

    01

    0

    01

    x1

    x2

    x1

    x2

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    0

    0

    1

    1

    0

    1

    0

    1

    0

    1

    1

    1

    x1

    x2 f

    Vf

    VDD

    Vx2Vx1

    VDD

    - OR realization byfollowing a NOR gate withan Inverter

    NMOS OR

    NMOS realization of an OR gate.

    (a) Circuit

    (c) Graphical symbols

    (b) Truth table

    f fx

    1

    x2

    x1

    x2

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    Vf

    VDD

    - All mentioned structures can be

    characterized by a block diagramwith PDN (pull-down network)

    PDN Structure

    Structure of an NMOS circuit.

    Pull-down networkVx1

    Vxn

    (PDN)

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    VDD

    T1

    Vx

    Vf

    VDD

    R- When Vx= 0V, T1 is ON &T2 is OFF, Vf= 5V. Since T2

    is OFF, no current flowsthrough trs.- When Vx= 5V, T2 is ON &

    CMOS NOT

    CMOS realization of a NOT gate.

    (b) Truth table and transistor states

    on

    off

    off

    on

    1

    0

    0

    1

    fx T1 T2

    (a) Circuit

    VfVx

    T2

    NMOS realization of NOT gate

    ,f= .

    is OFF, no current flowsthrough trs.- KEY: no current flows in

    CMOS Inverter

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    VDD

    T1

    T2

    2121 xxxxf +==Logic expression of NAND gate:Look at Truth Table, f=1 when eitherx1 orx2= 0, thus PUN must

    be active in this case (pull up Vf to 1), and two PMOS transistors

    must be connected in parallel.

    The PDN must implement the complement off:

    Since !f=1 when both x1 and x2 = 1, PDN must

    have two NMOS trs. connected in series.

    21xxf =

    CMOS realization of a NAND gate.(a) Circuit

    Vf

    (b) Truth table and transistor states

    on

    on

    on

    off

    0

    1

    0

    0

    1

    1

    0

    1

    off

    off

    on

    off

    off

    on

    f

    off

    on

    1

    1

    1

    0

    off

    off

    on

    on

    Vx1

    Vx2

    T 3

    T 4

    x1 x2 T 1 T 2 T 3 T 4

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    VDD

    Vx1

    Vx2

    T1

    T 2

    2121 xxxxf =+=

    CMOS NOR

    (a) Circuit

    Vf

    (b) Truth table and transistor states

    on

    on

    on

    off

    0

    1

    0

    0

    1

    1

    0

    1

    off

    off

    on

    off

    off

    on

    f

    off

    on

    1

    0

    0

    0

    off

    off

    on

    on

    T 3 T 4

    x1 x2 T 1 T 2 T 3 T 4

    CMOS realization of a NOR gate.

    21! xxf +=

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    Vf

    VDDVDD

    CMOS AND

    CMOS realization of an AND gate:connecting a NAND gate to an Inverter

    Vx1

    Vx2

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    Consider the following function:

    Since all variables appear in theircomplemented form, we can directly

    derive the PUN: 1 PMOS tr. controlled by Vf

    VDD

    321 xxxf +=

    Example 3.1

    x1

    n para e w a ser es com na on o

    2 PMOS trs. controlled byx2 &x3

    For PDN, take complemented form offwhich leads to result as shown in Fig.

    Vx1

    Vx2

    Vx3

    ( )321321 xxxxxxf +=+=

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    Consider the following function :

    Build a circuit using CMOS to implement this functionality( 4321 xxxxf ++=

    Example 3.2

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    Consider the following function :

    Step 1: Build PUNVf

    VDD

    ( 4321 xxxxf ++=

    Example 3.2

    Step 2: Build PDN

    Vx1

    Vx2

    Vx3

    Vx4

    ( ) 4321 xxxxf ++=

    ( )4321! xxxxf +=

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    V

    VDD

    V V V

    Voltage Levels

    Voltage levels in the NAND gate

    (a) Circuit (b) Voltage levels

    L

    H

    L

    L

    H

    H

    L

    H

    H

    H

    H

    L

    Vx1

    Vx2

    x1 x2

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    Positive logic system: higher voltages represent logic

    (a) Positive logic truth table and symbol of NAND gate

    f00

    1

    1

    01

    0

    1

    11

    1

    0

    x1 x2 f

    x1

    x2

    Voltage Levels

    Negative logic systems: the association betweenvoltages and logic values is reversed

    (b) Negative logic truth table and symbol of NAND gate

    1

    1

    0

    0

    1

    0

    1

    0

    0

    0

    0

    1

    x1 x2 f

    fx1

    x2

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    Large variety of chips that implement various functions that are

    useful in the design of digital hardware

    The chips range from very simple ones with low functionality to

    extremely complex chips Eg. A digital hardware product may require a P to perform

    some arithmetic operations, memory chips to provide storage

    Integrated Circuit Chips

    capability, and interface chips that allow easy connection to inputand output devices

    Three main types of chips:

    Standard chips

    Programmable logic devices

    Custom chips

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    Circuit ComplexityGives measure of number of transistors or

    gatesWithin single package

    Four general categories

    Characterizing Standard Chips: Digital ICs

    characterized several ways as follows:

    - ma ca e< 12 gates or soMSI - Medium Scale IC

    < 100 gates or so

    LSI - Large Scale IC< 1000 gates or so

    VLSI Very Large Scale IC

    > 1000 gates or so

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    Circuit Topology

    Describes the input and output structure of the deviceThree general categoriesTTL - Transistor Transistor Logic

    Bipolar transistors on input and output

    Output section looks like described circuitReferred to as totem pole output

    ECL - Emitter Coupled LogicBipolarLogic done in emitter circuitry rather than

    collectorHigh speed

    MOS - Metal Oxide Semiconductors

    MOS transistors on input and output

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    a Dual-inline acka e

    Standard Chip Examples- 74LS00 is built by TTL tech.

    - 74HC00 is fabricated by CMOStechnology- Most popular chips used today

    are the CMOS variants

    A 7400-series chip.

    (b) Structure of 7404 chip

    VDD

    Gnd

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    VDD

    7404

    An implementation of

    x1

    x2

    x3

    f

    7408 7432

    3221 xxxxf +=

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    Pin

    12

    Pin

    14

    Pin

    16

    Pin

    18

    Pin

    11

    Pin

    13

    Pin

    15

    Pin

    17

    Pin

    19

    - Because of their low logic capacity, the standard

    chips are seldom used in practice.- One exception: many modern products includestandard chips containing buffers (logic gates thatare usually used to improve the circuit speed)

    The 74244 buffer chip comprises 8 tri-state

    buffers

    Pin

    2

    Pin

    4

    Pin

    6

    Pin

    8

    Pin

    1

    Pin

    3

    Pin

    5

    Pin

    7

    Pin

    9

    Buffer

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    Vf

    VDD

    Vx

    - When a logic gate has to drive a largecapacitive load, buffers are often usedto improve performance: f = x

    - Buffers can be created with differentamounts of drive capability, dependingon the sizes of the transistors (will be

    Buffer

    A non-inverting buffer

    (a) Implementation of a buffer

    x f

    (b) Graphical symbol

    scusse ater - As used for driving higher-than-normal capacitive loads, buffers havetrs. that are larger than normal

    - Not only for high speed performance,buffers are also used when highcurrent flow is needed to drive externaldevices (e.g. use buffer to control LED)

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    -Inverting buffer produces the same output as an inverter butis built with relatively large transistors- As shown in figure, for large values of n an inverting buffer

    could be used for the inverter labeled as N1

    Inverting Buffer

    Inverter that drives n other inverters

    xf

    n

    To inputs of

    n other inverters

    N1

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    Tri-state buffer hasadditional controlinput, called enable e

    x f

    e

    a A tri-state buffer b E uivalent circuit

    x f

    e = 0

    e = 1

    x f

    (c) Truth table

    0

    0

    1

    1

    0

    1

    0

    1

    Z

    Z

    0

    1

    fe x

    Four types of tri-state buffers.

    x f

    e

    (b)

    x f

    e

    (a)

    x f

    e

    (c)

    x f

    e

    (d)

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    ( ) ( ) 212112212121212121 ),,(

    sxxsxxxsxxxs

    xsxxxsxxsxxsxxsf

    +=+++=

    +++=

    From Truth Table, derive canonical SOP form

    Multiplexer

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    An application of tri-state buffers: Multiplexer

    fx1

    x2

    s

    Multiplexer based on Logic gates

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    Z

    x

    0

    1

    fs

    fx

    s

    s

    - A transmission gate: switch that connects xto f

    - A switch is turned on by setting VS = 5V & V!S = 0V.+ Vx= 0V: NMOS isturned on, Vf = 0 (drain is

    pulled down to Gnd source)+ Vx= 5V: PMOS is

    (b) Truth table

    s 0=

    s 1=

    x

    x

    f = Z

    f = x

    (c) Equivalent circuit

    (a) Circuit

    (d) Graphical symbol

    fx

    s

    s

    , f =

    is pulled up to VDDsource)

    fx

    e

    (e) Implementation

    f fe x

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    x1 fx1

    Truth table: Transmission gate

    Zx01

    fs

    Truth table: Tri-state buffer

    0

    01

    1

    0

    10

    1

    Z

    Z0

    1

    fe x

    A 2-to-1 multiplexer builtusing transmission gates.

    x2

    f

    s

    x2

    s

    A 2-to-1 multiplexer builtusing tri-state buffers.

    XOR G

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    x1

    x2

    f x x=

    0

    0

    11

    0

    1

    01

    0

    1

    10

    x1 x2 f x1 x2=

    XOR Gate

    CMOS implementation

    CMOS Exclusive-OR (XOR) gate.

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    (a) Truth table

    00

    1

    1

    01

    0

    1

    01

    1

    0

    x1 x2 f x1 x2=

    (b) Graphical symbol

    x1

    x2f x1 x2=

    Logic gate based Exclusive-OR (XOR) gate.

    (c) Sum-of-products implementation

    f x1 x2=

    x1x2

    PLD

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    VDD

    VDD VDD VDD

    S1

    NOR plane

    x1 x2 x3

    PLD

    An example of a NOR-NOR PLA.

    VDD

    S2

    S3

    NOR plane f1 f2

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    x1 x2 xn PLA

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    Input buffers

    invertersand

    1 2 n

    x1 x1 xn xn

    -Be realized in Sum-Of-Products form- Each Pk is configured to implement

    any AND function of xi- Each fm is configured to implementan OR function of P

    PLA

    General structure of a PLA (Programmable Logic Array).

    f1

    AND plane OR plane

    P1

    Pk

    fm

    x1 x2 x3xxxxxxxf ++=

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    P1

    P2

    OR plane

    Programmableconnections

    32131211 xxxxxxxf ++=

    Gate-level diagram of a PLAHow to implement ?

    f1 f2

    AND plane

    P3

    P4

    x1 x2 x3

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    P1

    P2

    1 2 3

    OR plane

    - Customary schematic for the PLA in previous Figure- Constraint: size of AND plane (only 4 product terms)

    f1 f2

    AND plane

    P3

    P4

    x1 x2 x3PAL

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    f1

    P1

    P2

    PAL

    - Programmable switches present 2 difficulties in manufacturing

    - PAL (Programmable Array Logic): programmable AND plane,fixed OR plane -> less flexibility than PLA

    f2

    AND plane

    P3

    P4

    SelectEnable

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    f1

    D Q

    Clock

    Enable

    Flip-flop

    Extra circuitry added to OR-gate to provide additional functionality

    To AND plane

    FF represent a memory element, depend on signal clockthat the OR gate output will be hold at certain time point

    Multiplexer selects output either from OR gate or from Qoutput of the D-FF.

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    A SPLD programming unit (courtesy of Data IO Corp).

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    CPLD Section

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    PAL-like block (details not shown)

    PAL-like block- A CPLD consists ofmany PAL-like blocks

    CPLD Section

    A section of the CPLD

    D Q

    D Q

    D Q

    nterconnecte v a

    switches-A commercial CPLD has2-100 PAL-like blocks

    - Each PAL-l.b. has 3macrocells.- Each macrocell someOR gates .

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    (a) CPLD in a Quad Flat Pack (QFP) package

    To computer

    CPLD packaging and programming.

    Printed

    circuit board

    (b) JTAG programming

    FPGA

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    -FPGA differ from CPLD (noAND OR gates)

    - Use logic blocks toimplement required functions- 3 main resources: lo ic

    FPGA

    A field-programmable gate array (FPGA).

    blocks, I/O blocks,interconnect. wires &switches- LB: 2-d array

    - Interconnection: h. & v.routing channels

    LUT (Look-Up Table)

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    A two-input lookup table (LUT)

    LUT (Look Up Table)

    - Each L.B. typically has a small number of inputs & outputs.

    - The most commonly used L.B. is LUT (lookup table) whichcontains storage cells. The stored values (0/1) is produced asthe output of the storage cell.- LUTs have various sizes which are defined by number ofinputs

    Gate Multiplexer

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    ( ) ( ) 212112212121212121 ),,(

    sxxsxxxsxxxs

    xsxxxsxxsxxsxxsf

    +=+++=

    +++=

    From Truth Table, derive canonical SOP form

    p

    x1 LUT Multiplexer

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    (a) Circuit for a two-input LUT

    x2

    f

    0/1

    0/1

    0/1

    0/1

    0

    0

    1

    1

    0

    1

    0

    1

    1

    0

    0

    1

    x1

    x2

    (b) f 1 x1x2 x1x2+=

    f 1

    p

    A two-input lookup table (LUT).(c) Storage cell contents in the LUT

    x1

    x2

    1

    0

    0

    1

    f 1

    - A two-variable TT has 4 rows

    needs 4 cells.

    - Three multiplexers controlled by

    x1 & x2

    - Explain principle ?

    Example

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    0/1

    0/1

    0/1

    0/1

    x2

    x1

    Try to check its function by

    using Truth Table

    p

    A three-input LUT.

    0/10/1

    0/1

    0/1

    x3

    LUT Extra Circuit

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    Out

    Select

    Flip-flopIn1

    Inclusion of a flip-flop in an FPGA logic block.

    D Q

    Clock

    In2

    In3LUT

    - The FF is used to store the value of its D input under control of

    its clock input.

    x3 f

    LUT in FPGA

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    01

    0

    0

    00

    0

    1

    x1

    x2

    x2

    x3

    f 1 f 2

    x1

    x2

    - Two-input LUTs

    - Four wires in each

    routing channel- Fig. shows

    programmed states of

    the L.Bs. & switches

    Section of a programmed FPGA.

    0

    1

    1

    1

    f1

    f 2

    f

    + Blue switches: ON

    + Black switches: OFF

    21

    322

    211

    fff

    xxf

    xxf

    +=

    =

    =

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    A sea-of-gates gate array

    f 1

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    x1

    x2

    The logic function f1 = x2x3+x1x3 in the gate array

    x3