© 1997

DATA SHEET

MOS FIELD EFFECT TRANSISTORS

2SK2941SWITCHING

N-CHANNEL POWER MOS FETINDUSTRIAL USE

Document No. D11007EJ1V0DS00 (1st edition)Date Published May 1997 N

The information in this document is subject to change without notice.

DESCRIPTIONThis product is n-Chanel MOS Field Effect Transistor designed high

current switching application.

FEATURE• Low On-Resistance

RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A)

RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A)

• Low Ciss Ciss = 1250 pF Typ.

• Built-in G-S Protection Diode

ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C)Maximum Voltages and Currents

Drain to Source Voltage VDSS 30 V

Gate to Source Voltage VGSS ±20 V

Drain Current (DC) ID(DC) ±35 A

Drain Current (Pulse)* ID(Pulse) ±140 A

Maximum Power Dissipation

Total Power Dissipation (TA = 25 ˚C) PT 1.5 W

Total Power Dissipation (TC = 25 ˚C) PT 60 W

Maximum Temperature

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to + 125 ˚C

* PW ≤ 10 µs, Duty Cycle ≤ 1%

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device

acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to

this device.

1 2 34

10.6 MAX.

10.03.6±0.2

6.0

MA

X.

12.7

MIN

.

5.9

MIN

.

15.5

MA

X.

3.0±

0.3

1. Gate2. Drain3. Source4. Fin (Drain)JEDEC: TO-220AB

MP-25 (TO-220)

2.8±0.2

0.5±0.2

1.3±0.2

4.8 MAX.

1.3±0.2

0.75±0.1

2.542.54

Gate

Drain

DodyDiode

Source

Gate ProtectionDiode

PACKAGE DIMENSIONS

inmillimeters

2SK2941

2

ELECTRICAL CHARACTERISTICS (T A = 25 °C)

CHARACTERISTIC SYMBLO MIN. TYP. MAX. UNIT TEST CONDITION

Drain to Source On-State RDS(on)1 14 20 mΩ VGS = 10 V, ID = 18 A

Resistance RDS(on)2 22 33 mΩ VGS = 4 V, ID = 18 A

Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 2.0 V VDS = 10 V, ID = 1 mA

Forward Transfer Admittance I yfs I 8.0 25 S VDS = 10 V, ID = 18 A

Drain Leakage Current IDDS 10 µA VDS = 30 V, VGS = 0

Gate to Source Leakage Current IGSS ±10 µA VGS = ±20 V, VDS = 0

Input Capacitance Ciss 1250 pF VDS = 10 V, VGS = 0, f =1 MHz

Output Capacitance Coss 900 pF

Reverse Transfer Capacitance Crss 460 pF

Turn-on Delay Time td(on) 40 ns ID = 18 A, VGS(on) = 10 V

Rise Time tr 430 ns VDD = 15 V, RG = 10 Ω

Turn-off Delay Time td(off) 160 ns

Fall Time tr 220 ns

Total Gate Charge QG 50 nC ID = 35 A, VDD = 24 V,

Gate to Source Charge QGS 4.5 nC VGS = 10 V

Gate to Drain Charge QGD 21 nC

Body Diode Forward Voltage VF(S-D) 1.0 V IF = 35 A, VGS = 0

Reverse Recovery Time trr 65 ns IF = 35 A, VGS = 0,

Reverse Recovery Charge Qrr 90 nC di/dt = 100 A/µs

Test Circuit 1 Switching Time Test Circuit 2 Gate Charge

D.U.T.

RG = 10 ΩRG

VGSWave Form

t

t = 1 sDuty Cycle ≤ 1 %

0 IDWave Form

90 %10 %0

VGS

ID

010 % 10 %

90 % 90 %

ton toff

VGS(on)

RL

VDDPG

VGS

td(on) tr tftd(off)

ID

µ

D.U.T.

RL

VDDPG

50 Ω

IG = 2 mA

2SK2941

3

ELECTRICAL CHARACTERISTICS (T A = 25 °C)

100

80

60

40

20

0 20 40 60 80 100 120TC - Case Temperature - °C

PT -

Tot

al P

ower

Dis

sipa

tion

- W

TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

DRAIN CURRENT vs. DRAIN TOSOURCE VOLTAGE

VDS - Drain to Source Voltage - V

100

80

60

40

20

0 20 40 60 80 100 120TC - Case Temperature - °C

PT -

Per

cent

age

of R

ated

Pow

er -

%

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

140 160140 160

FORWARD BIAS SAFE OPERATING AREA

10

10.1 1 10

VDS - Drain to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

100

100

1000

ID(Pulse)

ID(DC)

PW = 1ms10 ms

100 msDC

200 ms

Tc = 25 °CSingle Pulse

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

rth(t

) - T

rans

ient

The

rmal

Res

ista

nce

- °C

/W

1 000

0.1

1

10

100

100m 1 10 100 1 000 10 0001m 10m

200

160

120

80

40

0 0.5 1.0 1.5

VGS = 10 V

VGS = 4 V

Pulsed

Rth(ch-a) = 83.3 (°C/W)

Rth(ch-c) = 2.08 (°C/W)

Single PulseTc = 25 °C

ID -

Dra

in C

urre

nt -

A

2SK2941

4

GATE TO SOURCE CUTOFF VOLTAGE vs.CHANNEL TEMPERATURE

2.0

1.5

1.0

0.5

0

Tch - Channel Temperature - °C

VG

S(o

ff) -

Gat

e to

Sou

rce

Cut

off V

olta

ge -

V

10

1 10

|yfs| -

For

war

d T

rans

fer

Adm

ittan

ce -

S

FORWARD TRANSFER ADMITTANCEvs. DRAIN CURRENT

ID - Drain Current - A

VGS = 0f =1 MHz

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

1000

100

0.1 1 10VDS - Drain to Source Voltage - V

Crss

Ciss

Cis

s, C

oss,

Crs

s -

Cap

acita

nce

- pF

FORWARD TRANSFER CHARACTERISTICS

100

10

0 5 10VGS - Gate to Source Voltage - V

ID -

Dra

in C

urre

nt -

A

1000

–50 0 50 100 150

VDS = 10 VID = 1 mA

100 1000

100

50

0 5 10VGS - Gate to Source Voltage - V

RD

S(o

n) -

Dra

in to

Sou

rce

On

- S

tate

Res

ista

nce

- m

Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

ID = 7 A18 A35 A

Pulsed

RD

S(o

n) -

Dra

in to

Sou

rce

On

- S

tate

res

ista

nce

- m

Ω DRAIN TO SOURCE ON - STATE RESISTANCE vs. DRAIN CURRENT

ID - Drain Current - A1 10 1000

10

20

30

VGS = 4 V

VGS = 10 V

10 000

Coss

100V DS= 10 V

PulsedTA = –25 °C25 °C75 °C

125 °C

TA = –25 °C25 °C75 °C

125 °C

10

VDS = 10 VPulsed

2SK2941

5

DRAIN TO SOURCE ON-RESISTANCE vs.CHANNEL TEMPERATURE

100

80

60

40

20

0

Tch - Channel Temperature - °CRD

S(o

n) -

Dra

in to

Sou

rce

On

- S

tate

Res

ista

nce

- m

Ω

–50 0 50 100 150

ID = 18 A

VGS = 4 V

VGS = 10 V

SWITCHING CHARACTERISTICS

100

10

0.1 1 10ID - Drain Current - A

td(o

n), t

r, td

(off), t

f - S

witc

hing

Tim

e -

ns1000

VDD = 15 VVGS =10 VRin =10 Ω

t r

t f

t d(off)

td(on)

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

40

30

20

10

0Qg - Gate Charge - nC

VD

S -

Dra

in to

Sou

rce

Vol

tage

- V

20 40 60 80

ID = 35 A

VGS

VDS

VDD = 24 V15 V 6 V

ISD -

Dio

de D

orw

ard

Cur

rent

- A

SOURCE TO DRAIN DIODEFORWARD VOLTAGE

VSD - Source to Drain Voltage - V0.40

1.0

10

100

0.10.8 1.2 1.6 2.0 2.4

REVERSE RECOVERY TIME vs.DRAIN CURRENT

100

10

0.1 1 10

I D - Drain Current - A

trr -

Rev

erse

Rec

over

y D

iode

- n

s

1000 di/dt = 100 A/ sVGS = 0

µ

100

1

1000

100

VGS = 4V VGS = 0V

Pulsed

Pulsed

1

16

14

12

10

8

6

4

2

0

VG

S -

Gat

e to

Sou

rce

Vol

tage

- V

2SK2941

6

ELECTRICAL REFERENCE (T A = 25 °C)

Ducument Name Ducument No.

NEC semiconductor device reliability/quality control system C11745E

Quality grade on NEC semiconductor devices C11531E

Semiconductor device mounting technology manual C10535E

Semiconductor device package manual C10943X

Guide to quality assurance for semiconductor devices MEI-1202

Application circuits using Power MOS FET TEA-1035

Safe operating area of Power MOS FET TEA-1037

2SK2941

7

[MEMO]

2SK2941

2

No part of this document may be copied or reproduced in any form or by any means without the prior writtenconsent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear inthis document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual propertyrights of third parties by or arising from use of a device described herein or any other liability arising from useof such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or otherintellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons orproperty arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safetymeasures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on acustomer designated "quality assurance program" for a specific application. The recommended applications ofa device depend on its quality grade, as indicated below. Customers must check the quality grade of each devicebefore using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade,they should contact an NEC sales representative in advance.Anti-radioactive design is not implemented in this product.

M4 96.5