doc.: IEEE 802.15-11-0476-00 Project: IEEE ... · Broad Area Maritime Surveillance (BAMS)...

doc.: IEEE 802.15-11-0476-00

Submission

<July 2011>

Stephen Sarkozy,

Northrop Grumman Aerospace Systems

Slide 1

Project: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)

Submission Title: With InP HEMT, THz Dreams are Taking on a More Solid State

Date Submitted: 14 July, 2011

Source: Stephen Sarkozy Company Northrop Grumman Aerospace Systems (NGAS)

Address One Space Park, Redondo Beach, 90278, California, United States of America

Voice:310-812-1106, FAX: --, E-Mail: [email protected]

Re: [N/A]

Abstract: This document contains some of the work done by NGAS with regards to advanced high

frequency millimeter wave, sub-millimeter wave, and terahertz solid state technology.

Purpose: IEEE P802.15 may use this document to promote discussion at interest groups, including posting

the document publically. This document is not meant to be a transfer of copyright of the information from

NGAS to IEEE. Portions of this work were conducted under DARPA THz Electronics, DARPA HiFIVE,

NASA GRIP, and JIEDDO LORPI, and material has been appropriately cleared for public release.

Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for

discussion and is not binding on the contributing individual(s) or organization(s). The material in this

document is subject to change in form and content after further study. The contributor(s) reserve(s) the right

to add, amend or withdraw material contained herein.

Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE

and may be made publicly available by P802.15.

doc.: IEEE 802.15-11-0476-00

Submission Stephen Sarkozy,


Slide 2

With InP HEMT, THz Dreams are

Taking on a More Solid State

Stephen Sarkozy

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

IEEE Spectrum: Edholm's Law of BandwidthNeed for access to THz Spectrum

• Information driven society and consumers have shown an

insatiable need for greater data rates spanning decades

(Edholm’s Law), and are showing no signs of subsiding

• Spectral reuse and trying to cram more bits/Hz is offering

diminishing returns

• Need for access to a reservoir of untapped and reusable

spectrum to satisfy next generation of data transfers needs (3D

High Definition resolution, continual access to cloud computing,

real time 360 awareness and projection

• THz frequency (0.1 to 1 THz) solid state electronics is the only

solution which can meet the requirements of the consumer:

• Low Receiver Power consumption (battery life)

• Low cost (Batch Fabricated micro/nano electronics)

• High Reliability

• Selectable attenuation windows/bands to tailor point-to-point,

point-to-multipoint, and other signal sharing operation

concepts

• Evolutionary/Revolutionary Blend

• Evolution – Consumer understands microchips,

semiconductors - uses them in products today

• Revolution – Game-changing capabilities with regards

to integration, performance, and capabilities only

tomorrow’s generation can even imagine

Atmospheric Attenuation

Slide 3 Stephen Sarkozy,


<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Solid State Amplifiers for the THz Power Gap

Slide 4 Stephen Sarkozy,


Po

we

r (m

W)

NGAS THz Technology Amplifier Adapted from UCLA Annual Engineering Review, 2009

Pow

er (m

W)


Pow

er (m

W)


Solid State Amplification At Frequency is the Best Candidate Technology for Bringing THz Systems to Life

• Fundamentally Room Temperature

Operation

• Broadband operation

• Small form factor solution – often single

chip

• Potential for low-cost, high volume

production

• Low DC power consumption

• Amplifiers started operating in SMMW

regime ~ 5 years – significant improvement

to come.

• Mixers/multipliers operating ~ 3 decades,

performance likely saturated

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission Stephen Sarkozy,


Slide 5

Space Systems Division

Battle Management and Engagement Systems Division Advanced Programs and Technology

Division

EA-18G

EA-6B

Broad Area Maritime

Surveillance (BAMS)

Restricted

LEMV E-2

E-8C JSTARS

Maritime Laser

Demo

Restricted

Bat UAS

ABIRWide Band Relay

ORS

Strike and Surveillance Systems Division

AEHF

STSS / OMTS Restricted

Trinidad

JWST

DWSS

CMMSCMMS

Global Hawk

F-35

Fire Scout

MQ-8B

MP-RTIP

F/A-18

Missile

Systems

B-2 RestrictedGlobal Hawk

Fire Scout

MQ-8C

UCAS

Firebird

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Multi-use microelectronics foundry• Flight-qualified, commercial, and R&D run on common fabrication line

• 100mm and 3” front side labs totaling 25,000 sq. ft.

• Multidisciplinary THz MIC “TMIC” team lead by NGAS Technology Fellow

(Product, MBE, EBL, Process)

Dedicated high frequency design team• Subject Matter Experts in mmW, smmW, and THz design

• Design experience in low noise amplifiers, power amplifiers, and frequency

converting circuits

Dedicated THz Laboratory and state of art testing facilities• On-wafer vector analysis to >700 GHz

• Power and noise figure measurements through 700 GHz

• Non-linear testing to 700 GHz

• Trained technicians in high frequency assembly and test

• Equipment and knowledge to build custom test setups

• Internal and external precision machine shops for THz frequency packages

Extensive publication list, trade secrets, patents, and awards• >100 papers and proceedings on smmW and THz results

• Trades secrets, patents, and pending patents on THz processes and

technology

• Multiple records including Guinness World Record for Fastest Transistor

• DARPA MTO Coin #250

08-02666-024b_02

Complete clean room fabrication facilities with more than 40,000 ft2 of Class 10 clean room space

3 Leica EBL machines for sub 0.1-mm lithography 3 cannon I-line steppers 6 Ultratech g-line steppers Premier producer of advanced HBT and HEMT

integrated circuits for DoD and commercial use Production wafer bonding capabilities

Microelectronics Fabrication Facility

• NGST has complete fabrication facilities (Class 10) ISO 9001 certified

• GaAs production of 20,000 HBT and HEMT wafers per year

• InP production line for high-volume InP

• HBT technology 20,000 ft2

NGST’s Microelectronics Fabrication Facility

• Over 40,000 ft2 of Class 10 clean room space

• Two Leica EBL machines for sub-0.1- m lithography, 1000 wafer/year capacity

• Three cannon I-line steppers

• Six Ultratech g-line steppers

• Premier producer of advanced HBT and HEMT integrated circuits for DoD and commercial use

• Automated CD SEM

Figure A2-1. NGST’s Facilites and Design Capability Complement and Support the Efficient Development of GAN:STAR Technology

• Growth capabilities from 2 inches up to 100 mm

• High volume wafer capabilities• Multiple material suppliers• Material uniformity <2%• Run-to-run reproducibility <3%• Detailed wafer mapping capabilities

NGST’s Microelectronics Epitaxial Capability

• NGST has more than 35 years experience in mixed signal and RF component design

• Mentor Graphics and Cadence design tool for high speed digital design

• Agilent’s Advance Design system for RF MMIC design

• 2D Sonnet and 3D HFSS EM simulation tools for passive component design

NGST’s Component Design Capability

Growth capabilities from 2 inches up to 100 mm High volume wafer capabilities Multiple material suppliers Material uniformity <2% Run-to-run reproducibility <3% Detailed wafer mapping capabilities

Microelectronics Epitaxial Capability

Component Design Capability More than 40 years experience in RF component and mixed signal design

Agilent’s Advanced Design System for RF MMIC design

HFSS, Sonnet and Momentum electromagnetic design tools

Cadence layout tools and dedicated layout support team

ISO 9001 certified Proven III-V production line for 20,000 wafers per

year Trusted foundry Class H and K production

Stephen Sarkozy,


Slide 6

NGAS Terahertz Product Overview

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

NGAS High Frequency Amplifier Technology

0

0.2

0.4

0.6

0.8

1

1990 1995 2000 2005 2010 2015 2020

Op

era

tin

g F

req

ue

nc

y

[TH

z]

Year of Demonstration

• 1st 90 GHz MMIC

• 1st W-band chipset

• 1st 94 GHz PMMW

Camera

• ?

•Insertion into

major telescope

arrays

• 1st Spaceflight

of InP

• ?

• 1st Commercial

Delivery SMMW

Amplifier

• 183 GHz Global

Hawk Radiometer

• ?

Technology

Revolution

?

Stephen Sarkozy,


Slide 7

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Sub-50nm InP HEMT Technology

Frontside

Via Gold

Molecular Beam Epitaxy• 3’’ wafers

• Indium Arsenide Composite Channel (IACC)

• µ > 14000 cm2/V∙s, ns = 3.5 x 1012 cm-2

• Composite cap for tunnel Ohmic Contacts

IACC HEMT IC Features

• Non-alloyed Ohmic Contact

• sub-50nm T-gate

• 600 pF/mm Metal-Insulator-Metal Capacitors

• 20 and 100 Ω/ Thin Film Resistors

• Two layer metal interconnect with air bridges

• PECVD SiN passivation

• Substrate thinning to 25 -75 µm (frequency dependent)

• Scaled transmission lines and passive/active layouts

Process Commonality• Same Fabrication Line for spaceflight, commercial, R&D

• Same MBE, EBL, and process for Low Noise Amplifiers,

Power Amplifiers, and Frequency Conversion circuits

• High Frequency ICs small – multiple designs/circuit on a

single wafer

• Macrocells and System-on-Chip Possibilities

Stephen Sarkozy,


Slide 8

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Terahertz Transistor Performance THz fMAX

Gain per stage

• High fMAX / fT enable revolutionary circuit performance

• Highest Gain/Stage circuits to 670 GHz

• Gain, Threshold, and Phase uniformity

• Power combining demonstrated up to 32 fingers in last stage

• 10 stage LNA biased of single Vd and Vg voltages

• High yield circuits and Macro-cells

• Single device profile for low noise amplification, high power

amplification, and frequency conversion

Uniformity

2132 2167 2221 2193 2223

2121 2165 2181 2184 2212 2226

2141 2138 2165 2169 2149 2226

2186 2186 1552 2216 2245 2251 2048

2216 2184 2235 2222 2290 2260 2258 2271

2210 2204 2278 2282 2019 2244 2221

2285 2270 2307 2301 2333 2327

2337 2318 2369 2319 2255 2355

Gm-peak wafer map

0

10

20

30

40

50

60

70

De

vic

e c

ou

nt

Gm (mS/mm)

Stdev (Gmp) <10%

(5 wafers shown)

87% 300 GHz Rf Yield

-30

-20

-10

0

10

20

30

220 240 260 280 300 320

Gai

n (d

B)

Ferquency (GHz)

LNA270 GAIN on THMT1 Wafers (on-wafer testing)

THMT1 Wafer -095

THMT1 Wafer -096

THMT1 Wafer -097

0

2

4

6

8

10

12

10 100 1000

Me

asu

red

LN

A G

ain

pe

r St

age

(d

B)

Center Frequency (GHz)

m38freq=devicemodeling_5_25_2011_THMT2_WR1p5_TL_model..MaxGain1=-0.053

1.400THz

1E

11

1E

12

1E

10

2E

12

5

10

15

20

0

25

Frequency [GHz]

Ma

xG

ain

[d

B]

Readout

m38

m38freq=devicemodeling_5_25_2011_THMT2_WR1p5_TL_model..MaxGain1=-0.053

1.400THz

1.4 THz

Stephen Sarkozy,


Slide 9

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

0

1000

2000

3000

4000

5000

6000

0 200 400 600 800 1000

No

ise

Te

mp

era

ture

(K

elv

in)

Frequency (GHz)

Noise Temperature at MMIC

Noise Temperature in Package

2007

11-0

0551_3-0

06

b_

15

4

Frequency [GHz]

Gain

[d

B],

No

ise F

igu

re [d

B]

No

ise T

em

pera

ture

[K]

0

2

4

6

8

10

12

14

16

18

150 160 170 180 190300

400

500

600

700

800

900

1000

1100

1200

Gain [dB]

NF [dB]

NT [K]

Legacy MMIC Noise Figure and Gain

Gain (dB)

RF Frequency (GHz)

Noise Figure (dB)

20

192-200

5.5

Return Losses (dB) 10

GRIFFEN Goals

Legacy MMIC2008

2009

2009

2010

Low Noise Amplifier Performance

Stephen Sarkozy,


Slide 10

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

-5

0

5

10

15

20

25

30

10 100 1000

Ou

tpu

t P

ow

er (d

Bm

)

Frequency (GHz)

sub-50nm IACC MMICsub-50nm IACC Fixture150nm InP MMIC70nm InP MMIC 2007

2010

2011

2008

•Pout follows 1/f2 trend

• Single Chip Data – Power

Combining off chip?

• Early generation designs2011

Stephen Sarkozy,


Slide 11

Power Amplifier Performance<July 2011>

Frequency (GHz)

doc.: IEEE 802.15-11-0476-00

Submission

Enabling Circuit – 340 GHz LNA

Coplanar Waveguide (CPW)Coplanar Waveguide (CPW)

GNDSignal

InP

GND

-20

-15

-10

-5

0

220 260 300 340

Frequency [GHz]

Retu

rn L

oss [

dB

]

-8

-6

-4

-2

0

Insert

ion

Lo

ss [

dB

]

Sim.

Sim.

Meas.

Meas.

0

-2

-4

-8

-6

0

-5

-10

-20

-15

220 260 340300Frequency (GHz)

Ret

urn

Lo

ss (

dB

)

MeasuredModeled

MeasuredModeled

S21 (d

B)

Stephen Sarkozy,


Slide 12

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

4-1 “fan” Combiner:

• Built in transformer

absorbs matching

networks

•12.5-ohm input

impedance

• 50-ohm output

impedance

• Measured IL:

< 2 dB

Low Loss Dual Dipole:

• Power Combining Transition

to Waveguide

• Low Loss and excellent

phase matching

0

200

400

600

800

1000

1200

1400

0 1 2 3 4 5

Id (

mA

/mm

)

Vds (Volts)

THz Transistor:

• Bias for high power and RF swing

• Can optimize Epitaxy for power device

• >1mm total gate periphery

Stephen Sarkozy,


Slide 13

Enabling Circuit – 220 GHz PA

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

THz Measurement Capability

THz Metrology Infrastructure “Needs”

• Method for evaluating large sample of designs

• Should be relatively low-cost (not packaged chips)

NGAS THz Metrology Infrastructure Capabilities

• On-Wafer Measurements from 140-950 GHz

• Waveguide Measurements from 70-1000 GHz

• Power Sensors from 70-1000 GHz

• Sources from 180-670 GHz

• Receiver from 180-1000 GHz

THz Collaboration

• Frequency Extenders developed by Virginia Diodes, Inc

• Probes developed by University of Virginia

VNA

Port 1 Extender Port 2 Extender

WR1.5 Probe (UVA)

WR1.5 Probe Station

Probe Configuration

Images of WR-1.5 probe circuits and probe tip

Measurement of 1-mm line with on-wafer TRL Calibration

-180

-120

-60

0

60

120

180

-30

-25

-20

-15

-10

-5

0

500 550 600 650 700 750

Ph

ase [degrees]

S-Pa

ram

eter

s [d

B]

Frequency [GHz]

S21

S11

S21

Stephen Sarkozy,


Slide 14

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

SMMW Integration

Limitations

Micron-Scale Wavelengths Require Micron-Scale Interconnect Technologies

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

0 100 200 300 400 500 600 700

WR-3 WR-2.2 WR-1.5

Micro-Machined Waveguide

Microstrip

CPW

Sub-Millimeter (Terahertz)Millimeter

Microwave

Micro-Fabricated Routing Loss (Per )

Insert

ion

Lo

ss [

dB

/]

Frequency [GHz]

1

2

3 4 5

12

3

1 2 3

• Physically scaling interconnect dimensions with wavelength virtually eliminates frequency dependence of the interconnect

• At SMMW (THz) frequencies, scaled interconnects requires micron-scale geometries

MicrostripCPW

Micro-fabricated

Rectangular

Waveguide

Machined Interconnects

Screws

>>

Stephen Sarkozy,


Slide 15

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

WR1.5 Fixture Evolution

• Ripples in transmission measurement, due to

low via density per wavelength, and orthogonal

waveguide modes excited in wide chip fixture

520 540 560 580 600 620 640 660 680500 700

-25

-20

-15

-10

-5

-30

0

Frequency [GHz]

Insert

ion L

oss [

dB

]

WR1.5 Dipole Transition v1

Sim. S21

Meas. S21

375

µm

CPW thru chip in fixture

Chip width

set by circuit

size

Outcome: Need for more densely

spaced vias and reduced chip width

WR2.2 Dipole Transition

475 500 525450 550

-15

-10

-5

-20

0

Frequency [GHz]

Inse

rtio

n L

oss [d

B]

320

µm


• Successful fabrication of 500 GHz

transition on 1-mil InP

Outcome: Demonstration of 1

mil InP chip

Sim. S21 Meas. S21

Test set glitch

-20

-15

-10

-5

0

500 525 550 575 600 625 650 675 700 725 750

Inse

rtio

n Lo

ss [d

B]

Frequency [GHz]

Scaled chip width WR1.5

Transition

270

µm


Outcome: Demonstration of dense

vias, shows need for scaled chip

width, but need more space for

circuit

Sim. S21

Meas. S21

Test set glitch

Stephen Sarkozy,


Slide 16

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

WR1.5 Fixture Evolution

• Ripples in transmission measurement, due to

low via density per wavelength, and orthogonal

waveguide modes excited in wide chip fixture

520 540 560 580 600 620 640 660 680500 700

-25

-20

-15

-10

-5

-30

0

Frequency [GHz]

Insert

ion L

oss [

dB

]

WR1.5 Dipole Transition v1

Sim. S21

Meas. S21

375

µm


Chip width

set by circuit

size

Outcome: Need for more densely

spaced vias and reduced chip width

WR2.2 Dipole Transition

475 500 525450 550

-15

-10

-5

-20

0

Frequency [GHz]

Inse

rtio

n L

oss [d

B]

320

µm


• Successful fabrication of 500 GHz

transition on 1-mil InP

Outcome: Demonstration of 1

mil InP chip

Sim. S21 Meas. S21

Test set glitch

-20

-15

-10

-5

0

500 525 550 575 600 625 650 675 700 725 750

Inse

rtio

n Lo

ss [d

B]

Frequency [GHz]

Scaled chip width WR1.5

Transition

270

µm


Outcome: Demonstration of dense

vias, shows need for scaled chip

width, but need more space for

circuit

Sim. S21

Meas. S21

Test set glitch

525 550 575 600 625 650 675500 700

-4

-3

-2

-1

-5

0

Frequency [GHz]

Inse

rtio

n L

oss [dB

]

7 mm WR1.5, gold

plated

Loss mechanisms Loss @ 670 GHz

Comments

Transition ~1.7 dB Agrees with simulation, verify CPW loss

515 μm CPW ~2.25 dB Based on W-band data (measure at 670 to verify)

7 mm WG ~0.75 dB Based measuredconductivity at 670 GHz

Total TMIC external loss (WGx2+DPx2)

~4.9 dB Two transitions with waveguide loss

515 μm

Transition

525 550 575 600 625 650 675 700500 725

-35

-30

-25

-20

-15

-10

-5

-40

0

-25

-20

-15

-10

-5

0

5

-30

10

Frequency [GHz]

Insert

ion L

oss [

dB

] Retu

rn L

oss [d

B]

Single Dipole Insertion Loss

De embededmeasurement

Simulation

s11

s22

Sim. Return loss

Sim. Insertion loss

S21

7 mm WR1.5, gold

plated

WR1.5 Integrated dipole probe with thru line

Stephen Sarkozy,


Slide 17

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Future THz Integration

Low-Loss Batch Fabricated Integration and Waveguides

Direct integration of

components with micromachinedfilters and

waveguide will enable improved

performance

191 µm

381 µm

Filter Schematic

525 550 575 600 625 650 675500 700

-25

-20

-15

-10

-5

-30

0

Frequency [GHz]

Insert

ion L

oss [dB

]

sim

meas

Filter Response

Batch-Fabricated Waveguide Waveguide End-View

Dime

Waveguide

Waveguide Corner

Stephen Sarkozy,


Slide 18

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

The Solid State Terahertz Solution

Understanding

Terahertz

Integration

Fundamental

Nanotech

Components

Electromagnetic

Transition to Engineered

Waveguide

Connectivity

Dual-Develop

Technology100nm

30nm

Electron Beam Lithography

•Dime

•Waveguide

Micromachined

Waveguide

Packaging

Suppress

Substrate

Modes

Custom Shape

Metrology

THz Components.

THz Probes.

THz Stations.

Leading

THz Circuit

Expertise

THz Modeling THz Design Techniques

Gate Bypass

Gate Bypass

Source

Drain

Gate

DrainSource

Source

75

um

25

um

Scaled Material.

Scaled Wafers.

Scaled Layout.

Advanced Layout and

Processing

~100um

10um

Stephen Sarkozy,


Slide 19

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Terahertz Transceiver

LO Amp

LO

IF Amp

•RF

LO Amp

RF out

THz Receiver

LNA

PA

SH Mixer RF in

SH Mixer

THz Transmitter

IF

IF

LNA

PA

670 GHz

LNA TMIC

PA TMIC

LO Amp

IF Amp

SH Mixer

LO Multiplier

LO multiplier

LO multiplier

670 GHz

THz Transceivers are possible with THz amplifiers

•300 GHz LO Port, WR3•670 GHz RF

Input Port, WR1.5

•70 GHz IF Output Port,

WR12

•DC Bias

Stephen Sarkozy,


Slide 20

Architecture of DARPA THz Electronics Program

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

0

5

10

15

20

25

0

10

20

30

40

50

60

-15 -10 -5 0 5 10 15

Pou

t (dB

m) / G

ain (d

B)

Pou

t (m

W)

Pin (dBm)

BPA3_DP, WR4-e with 5 ohm resistors, fc=217.5 GHz

Pout (mW) Pout (dBm) Gain (dB)

4

5

6

7

8

0

10

20

30

40

50

60

216 217 218 219 220 221 222 223

Ga

in (d

B)

Po

ut,

Pin

(m

W)

Frequency (GHz)

Measured Pout at 217.5 GHz Measured Pout vs. Frequency

Pout (mW)

Gain (dB)

Pin (mW)

Gain (dB)

Pout (mW)

Pout (dBm)

220 GHz PA

• Program Goal - microfabricate vacuum tube

delivering ~5W output power centered at 220 GHz

• 50mW output power at waveguide flange

• Preliminary Life Test - no degradation with > 1

month continual operation at 20mW

0 5 10 15 20 25

0

10

20

30

40

50

60

0 100 200 300 400 500 600 700

50 mW Life-Test Time (Hours)

Po

we

r Ou

t (m

W)

20 mW Life-Test Time (Hours)

Preliminary Life Test

Stephen Sarkozy,


Slide 21

Results from DARPA HiFIVE program

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

0

5

10

15

20

25

650 655 660 665 670 675 680

Recie

ver

No

ise F

igu

re [

dB

]

Frequency [GHz]

• First Demonstration of a THz Receiver,

~15dB Noise Figure from 660-680 GHz

• Room temperature performance roughly

comparable to single-sideband Schottky

mixers, cooling will increase performance

significantly

• DC power consumption ~50x reduced in

comparison to mixer/multiplier technology

• Realized completely in InP HEMT technology

– IACC Molecular Beam Epitaxial Profile

– Sub-50nm Gates

• Single technology allows for multiple

functions integrated on a single chip to

reduced losses and improve performance

Complete Terahertz Receiver

Horn

{LNAsMixer

LO

AmpMultiplier

IF Amp

Stephen Sarkozy,


Slide 22

To be published in IEEE Terahertz Transactions, Inaugural Issue

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

FeedLNA

~ IF

Π~DRO

Field Tested THz Systems

Stephen Sarkozy,


Slide 23

Images courtesy of NASA/JPL under GRIP

(P Kangaslahti)

UAV-HAMSR 183 GHz

Radiometer

IF

Filterbank

Feed

LNA

DRO

Mixer

Upper

Sideband

Reject

Filter

Global Hawk Radiometer

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission


Global Hawk Radiometer

Stephen Sarkozy,


Slide 24

• 10x improvement in NEΔT

• >150 hours of flight time in

open air housing

• Successful radiometry over

multiple storms including

Hurricane Earl

Images courtesy of NASA/JPL under GRIP

UAV-HAMSR 183 GHz

Radiometer

IF

Filterbank

Feed

LNA

DRO

Mixer

Upper

Sideband

Reject

Filter

<July 2011>

http://microwavescience.jpl.nasa.gov/images/instrument-ci.png

doc.: IEEE 802.15-11-0476-00

Submission

0

4

8

12

16

20

0

10

20

30

40

50

280 300 320 340 360

No

ise Figu

re (d

B)

Gai

n (

dB

)

Frequency (GHz)

Gain

NF

Part # MPD02915

Bias Supply (V) 2.0

Bias Current (mA) 50-60

3dB – Bandwidth (GHz) 300-340

Gain (dB) > 40

Noise Figure (dB) < 8

RF Input / Output WR3

Gain Blocks 2 or 3

Size (in) (l x w x h) 3x1x1¼

LNA LNADetectorHorn


Sub-millimeter Wave Imaging Pixel

Stephen Sarkozy,


Slide 25

<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Trimmed histogram

Stephen Sarkozy,


Slide 26

Images courtesy of Brijot Imaging Inc.



<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Trimmed histogram

Stephen Sarkozy,


Slide 27

Images courtesy of Brijot Imaging Inc.



<July 2011>

doc.: IEEE 802.15-11-0476-00

Submission

Dreams to Solid State RealityMicrointegration and Wafer Level Package for Array Scalability

Aperture Materials Evaluation and Enhancements

-0.35

-0.3

-0.25

-0.2

-0.15

-0.1

-0.05

0

0.05

15 16 17 18 19 20 21 22 23 24 25

Am

plit

ude

[mV

]

Time [nsec]

1.4 nsec

X6 PA X3

Pulsed sourceHorn Antenna

17 GHz 102 GHz 306 GHz

d LO

LNA LNA

X6

10 GHz

24.7 GHz

SHM

IFDetector

Focal Lens

• Quartz

• Kapton

• Mylar

• Metamaterials

• POC Solid State THz Hardware is

performing in the field today, and

demonstrating system value

• Drivers for advancing technology for

immediate future seem to continue to be

military and scientific missions

• Transition to commercial world will

require a paradigm shift

• Compaction

• Cost/Ease of Use

• Propagation Understanding

THz technology pieces exist, is there a player willing to put them together?

Stephen Sarkozy,


Slide 28

<July 2011>

doc.: IEEE 802.15-11-0476-00 Project: IEEE ... · Broad Area Maritime Surveillance (BAMS)...

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Transcript of doc.: IEEE 802.15-11-0476-00 Project: IEEE ... · Broad Area Maritime Surveillance (BAMS)...