July 10, 2011MtM WG - ITRS ERD - San Francisco1 “ More-than-Moore ” ERD M. Brillouët – U-In...
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Transcript of July 10, 2011MtM WG - ITRS ERD - San Francisco1 “ More-than-Moore ” ERD M. Brillouët – U-In...
July 10, 2011 MtM WG - ITRS ERD - San Francisco 1
“More-than-Moore” ERD
M. Brillouët – U-In Chung – S. Das – A. Ionescu+ H. Bennett – Y. Obeng
July 10, 2011 MtM WG - ITRS ERD - San Francisco 2
2011 “More-than-Moore” ERD & functions
LO
RF front-endIntermediate level
function
Lower level functions
NEMS nanoresonator
filter oscillator mixer
011001010…
control
rf wave
Higher level function
spin-torque oscillator
C-based electronics
antenna etc.
LNA
LO
ADC
PA DAC
switch
etc.
July 10, 2011 MtM WG - ITRS ERD - San Francisco 3
Discussion
• functions / devices addressed are frozen for 2011:– graphene rf transistors
– STO
– NEMS resonators
– rf mixers
• however:– the links between the different items and the functions
should be more explicit in the text
– the coherence between the sections could be improved
– the number of references is high (52 ref. in total)
– not every item fulfils the criteria of publication by ≥ 2 groupsor extensively by 1 group
• figure frozen: no future change• text could be improved (v2 around Aug. 15)• is there an ERD basecamp?
July 10, 2011 MtM WG - ITRS ERD - San Francisco 4
Graphene / C-based electronicsfor rf applications
U-In Chung – M. Brillouët
July 10, 2011 MtM WG - ITRS ERD - San Francisco 5
Graphene RF Transistors
Key figures of merit of Graphene RF Transistor
Possibility of THz cutoff frequency- Sub-100-nm transistors were fabricated using nanowire gate.- High Fermi velocity of carriers in graphene, resulting in high drift velocity (~ 4 x 107 cm/s) in channel, makes fT ~ 1THz for sub 70 nm channel length device
July 10, 2011 MtM WG - ITRS ERD - San Francisco 6
Highest cutoff frequency of Current Devices- GaAs mHEMT with a 20-nm gate: 660 GHz- Si MOSFET with a 29-nm gate: 485 GHz. - GaAs pHEMT with a 100-nm gate: 152 GHz.
Left: RF Transistors on 6 inch waferRight: Single RF Transistor
SAMSUNG [3]
F.Schwierz, “Graphene Transistors,” Nature Nanotechnology 5, 487 (2010)
UCLA [1]
IBM (Science)
Comparison to Current Devices
July 10, 2011 MtM WG - ITRS ERD - San Francisco 7
Needs and Destination of next generation mobile
Low Noise
Amplifier
Mixer
Potential applications
July 10, 2011 MtM WG - ITRS ERD - San Francisco 8
Spin-Torque nano-oscillators
U-In Chung – M. Brillouët
July 10, 2011 MtM WG - ITRS ERD - San Francisco 9
STOKey figures of merit of spin torque oscillator
1. frequency tunability ( 0.1 GHz ~ 40GHz or more) - frequency can be tuned by external magnetic field or spin torque current - frequency can also be tuned by magnetic materials and structures
2. compact size (nanometer-sized oscillator) - cost effective
Frequency tuning by different materials
Domain wall, Vortex <1GHz
GMR and MTJ Free & Pinned, <20GHz
AF exchange bias, SAF <40GHz
Additional H field >40 GHz
STO size : ~ 100 ⅹ 100 nm2
July 10, 2011 MtM WG - ITRS ERD - San Francisco 10
Crystal oscillator
VCO : L – high K
RF MEMS STO
Size < 1 cm3 < 1mm2 < 1mm2 < 1um2
Q 104 to 106 100 (enhanced inductor)
1000 >1000 (GMR)
Output Power 40mW1mW
(0 dBm)1mW
(0 dBm)<
1uW(currently)
Phase noise -170dBc -115 dBc -110 dBc N.A.
Power consumptio
0.4mA @ 0.82V
35mA @ 3.3V
1~5mA @ 1V
Tunable range
0% 10% 1% 10~100%
Agility microseconds nanoseconds
Comparison to existing oscillator technologies
July 10, 2011 MtM WG - ITRS ERD - San Francisco 11
R&D trends
eliminate the need of external H perpendicular polarizer + in-plane free layer
magnetic vortex
wavy spin torque
increase output power phase-locked synchronized STO array
lower phase noise / reduce linewidth
July 10, 2011 MtM WG - ITRS ERD - San Francisco 12
Discussion
• “spin transfer torque” or “spin torque transfer”?Both can be used. Use preferably STO= “spin transfer oscillators” or “spin torque oscillators” [NIST]
• need to reduce the number of references? (16 ref.)
July 10, 2011 MtM WG - ITRS ERD - San Francisco 13
NEMS resonators
A. Ionescu – M. Brillouët
July 10, 2011 MtM WG - ITRS ERD - San Francisco 14
NEM resonator
• integrate off-chip RF oscillator with the same quality as a quartz oscillator:– Q > 104 – 105 (Q of LC tank <<103)– T stability < 1 ppm/°C
• capacitively transduced resonator– figure of merit f x Q– scaling-up f by:
• dimension• stiffness• mass
– Q scaled down with dimensions due to dissipation mechanisms(gas friction, the clamping and surface losses)
– non-linearities and noise increase with dimension downscaling– impedance matching
July 10, 2011 MtM WG - ITRS ERD - San Francisco 15
NEM resonator
Parameter Scaling rule
mass k 3
stiffness k
resonant frequency k-1
mass responsivity k -4
energy consumption ≈ k 3
Scaling rules for MEMS
+ stiffer materials
K. L. Ekinci et al., Rev. Scient. Inst. 76, 061101(2005)
• Si NW• not-Si NW (III-V…)• CNT• graphene
July 10, 2011 MtM WG - ITRS ERD - San Francisco 16
NEMS resonators
• resonant gate
• resonant bodyC. Durand et al. IEEE EDL 29 494 (2008)
D. Grogg et al. IEDM 2008 663 D. Grogg et al. FREQ 2009 520
July 10, 2011 MtM WG - ITRS ERD - San Francisco 17
Discussion
• need to reduce the number of references? (21 ref.)• set a better boundary between “classical” MEMS
resonators and emerging mechanical devices• need to add state-of-the-art and projected values of FoM
for “classical” MEMS resonators
July 10, 2011 MtM WG - ITRS ERD - San Francisco 18
NDR for mixers
S. Das – M. Brillouët
July 10, 2011 MtM WG - ITRS ERD - San Francisco 19
RTD & SET for mixer
Benefits• high speed / frequency (sub-ps switching time)• wide operating temperature• reduced noise figure due to RTD shot noise suppression
Issues• use of III-V (InGaAs) [issue from the past?] variability
RTD
SET
[same comments]
July 10, 2011 MtM WG - ITRS ERD - San Francisco 20
Graphene for rf mixer
full-wave rectifier → frequency doubling
T. Palacios et al. IEEE Comm. Mag. 48 122 (2010)
if...
→ no odd-order inter-modulation
frequency mixer
July 10, 2011 MtM WG - ITRS ERD - San Francisco 21
Discussion
• “all-in-one nano-radio” mentioned in the text, but further inclusion should be addressed in 2012
July 10, 2011 MtM WG - ITRS ERD - San Francisco 22
not included in 2011 ITRS
M. Brillouët
July 10, 2011 MtM WG - ITRS ERD - San Francisco 23
Graphene for rf switch
rf switch
high current capability(>7 kA/cm²)
high Rc
K.M. Milaninia et al. APL 95 183105 (2009)
July 10, 2011 MtM WG - ITRS ERD - San Francisco 24
Discussion
• for 2012:– include “Technology fusion” in the introduction?
i.e., describe the broader scope of the MtM ERD– include ERD MEMS / NEMS linked to the MEMS TWG