Journal of Crystal Growth 312 (2010) 258–262
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Transcript of Journal of Crystal Growth 312 (2010) 258–262
Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate
Seong-Muk Jeong , SuthanKissinger , Dong-WookKim , SeungJaeLee , Jin-SooKim , Haeng-Keun Ahn , Cheul-RoLee
Journal of Crystal Growth 312 (2010) 258–262
D.J. Sun
Outline• Introduction
• Experiment
• Results and discussion
• Conclusion
• References
Introduction
• In this study, we describe the fabrication, optical and electrical properties of InGaN/GaN LEDs on lens-shaped patterened sapphire substrate (PSS) .
• GaN-based LEDs prepared on PSS have increased light extraction efficiency by scattering and also reduce the threading dislocation(TD) density .
Experiment
Experiment
Hight : 1.5µmDiameter : 5.8µmDistance : 3.7µm
Results and discussion
Fig. 4. SEM micrographs of the GaN surface grown on the lens-shaped PSS for the growth time of (a) 10 min, (b) 20 min, (c) 30 min, (d) 40 min, (e) 60 min , and (f) 80 min.
Results and discussion