Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC )

Overview on New Technologies in Silicon Detectors20th International Workshop on Vertex DetectorsJune 20th Rust, Austria

Iván Vila Álvarez

Instituto de Física de Cantabria (CSIC-UC)

Scope and Caveat— Focus on technologies proposed for the new generation

of HEP pixel/tracker systems.— Too broad topic for a comprehensive & detailed report.— Even current hot topics, like SiPM, outside the talk’s

scope.— Detailed reports on dedicated talks (see agenda):

sensors material and technologies, FEE-sensor interconnection, low mass supports, cooling, monitoring, local triggering, fast r/o links, industrialization, etc.

— Thank you to the too long list of people from which I grab all the nice pictures and plots.

2I.Vila, [email protected] - VERTEX2011, RUST

June 20th

Outline— R&D Targets and trends.— New (evolved) sensor concepts: monolithic, semi-

monolithic , hybrid and approaches.— New hybridization: SoI & 3D-IC— Module and detector system engineering.

_ Power distribution systems._ Ultra light mechanics_ Structual & environmental monitoring.

— Summary

I.Vila, [email protected] - VERTEX2011, RUST June 20th 3

The colliding Future ?— Bunch of projected EPP experiments driven the

mainstream R&D lines.


June 20th

HL-LHC

— Low mass, high precision vs. Rad. Resistance High granularity…. not quite app. beyond TRK/VTX.

STAR

R&D Trends

Sensor Technologies

Radiation

Resistance

Vertical

Electrode

s (3D)

N-in-p

New materials: MCz, Diamond, GaAs

.

High Resolutio

n/ low mass

DEPFET

CMOS

Smalll

pitch,

thinned

Hybrids

FPCCD,

CID

Sensor/ROC

integration

Hybrid

Single

stack

(flip-chip)

SOI

Multiple stacks

(3D-IC

interconnections)

Monolithic

CMOS

Module Engineering

ULTRALIGHT

MECHANICS

Self-supportin

g sensors

(DEPFET)

New materials (PLUME, SiC)

COOLING

CO2

AIR BLOWING

POWERING

SERIAL

DC-DC EMI

MONITORING

FOS- SENSORS

DATA LINK

TRANSCIVER

TRANSMISION LINE


June 20th

Back to the future: Evolved hybrids— During LHC’s LS1 shutdown a forth

extra layer to be installed (IBL) (R ~ 33mm)

— Ionizing dose > 250 MRads— NIEL dose: 5x1015 neqv cm-2

— Two (Three) competing hybrid technologies


June 20th

CiS CNMFBK

3D IBL Qualification Devices (FE-I4)

• Sensor produced at CNM• UBM and flip-chip at IZM

(Germany)• Mounted in Bonn and Genova


June 20th

5 x 1015 nequiv cm-2

20 V 120 V

3D IBL Qualification Devices (FE-I4)— Good threshold and noise uniformity and CCE— Irradiated 3D-FE-I4 devices currently at SPS

test beam.


June 20th

9I.Vila, [email protected] - VERTEX2011, RUST June 20th

3D sensors for LHCb’s VELO upgrade

— Other advantages: faster, reduced charge sharing to neighboring pixels, slim active edges.

— Drawbacks: inefficient volume due to column electrodes, much complex processing.

— 3D bump bonded to Medipix2 and TimePix ROC.

Single pixel efficiency120 GeV pions normal incidence 2011 JINST 6 P05002

3D sensors vs. Planar

Single pixel scan with microfocus (~5um) monocromatic X ray source.


June 20th

ratio of multiple hits/ single hit distribution in the single pixel area.

3D

PLANAR

Semi-monolithic sensors: DEPFET— Implanted transistor on a fully depleted bulk.— Integration of the first amplification stage.— Selected solution for Belle II vertex & proposal for

ILD vertex.


June 20th

Semi-monolithic sensors: DEPFET— Fully depleted sensitive volume (large signals)

_ r/o cap. independent of sensor thickness (reduce noise)— Internal amplification

_ charge-to-current conversion_ Large signal, even for thin devices._ Further signal amp. and processing outside the active

area (no need for bump bonded atop electronics).— Charge collection in "off" state.

_ r/o on demand (potentially low power device)_ only few rows active low power consumption_ Frame based pixel matrix R/O, rolling shutter mode


June 20th

ILC DEPFET prototype


June 20th

2010 SPS Test beam results


June 20th

Monolithic pixels: MAPS for STAR— Fully based on industrial CMOS technology— On each pixel a CMOS low noise amplifier.— n-well/p-epi diode incomplete depletion— Charge collection by diffusion (small signal)— Thinning (50um) standard procedure.


June 20th

MAPS: Tackling two main limitations

— CMOS industry provides a highly resistive epitaxial layer Increase depletion deep better SNR and radiation resistivity.

— MIMOSA 26 (EUDET’s telescope)


June 20th

MAPS future trends.

— MAPS pixels in Standard CMOS HV technology


June 20th

Monolithic “hybrid” sensors: SOI

— Full CMOS circuitry connected to a highly resistive and fully depleted substrate through silicon vias.

— CMOS device layer and high resistive substrate isolated by a buried oxide layer (BOX)


June 20th

MONOLITHIC HYBRID DEVICES: 3D-IC— Ingredients: Thin dyes (TIERS) + high density

interconnects + vias.


June 20th

Ziptronix

Typically 2 mm – 30 mm pitch0.5 mm potential

height

diameter

Height/diameter ~ 10:1

No pixelated 2D sensors: microstrips with resistive electrodes

— Charge division used in wire chambers to determine the coordinate along the sensing wire.

— Same concept with conventional microstrips with slightly resistive electrodes

— Better than 30um in long. coocrdinate

tt

t1t2

V

Particle

P4

S1

S2

Ampl1 Ampl2

20

2D strip sensors: radiactive source & 120 SPS Test beam.

21

WRAPPING UP— More optimized (thinned, low mass reduced power

consumption) hybrid pixel still rule the hadronic realm.

— New generation of precision experiments will use the next sensor technologies: CMOS; DEPFET

— In medium/ large time scale, SOI and ·3D-IC may become a mainstream industry technology (impact on HEP?)

— Apologies, many technologies –in some cases perfectly suited for dedicate experiment- left aside: Diamond, FPCCD, CiD, …


June 20th

SYSTEM-WISE R&D:POWERING

— Motivations: _ LHC detectors upgrade: more granularity more power

BUT same cables for power distribution and space constrains.

_ e+e- experiments (ILC, SKEK): ultralight vtx/trackers can not afford bulky cooling systems pulsed powering

_ Two strategies: serial powering vs. local DC-DC converters.

_ many issues to be addressed


June 20th

LOW MASS MECHANICS: self-supporting sensors


June 20th

Mechanics: new materials— PLUME Collaboration: SiC Foam


June 20th

Fiber Optical Sensors for Structural &Environmental Monitoring


June 20th

Fiber Optical Sensors for Structural &Environmental Monitoring


June 20th

— Application case: relative position monitoring of PXD and SVD Belle-II pixel sub-systems.

— Extremely radiation rad technologyFluence 3x1015 pcm-2

Ion. dose 15 MGy !! zero degradation

Irradiation

SUMMARY and…

— Semiconductor based detectors are becoming more and more ubiquitous approaching the all-silicon detector concept.

— Some of the here presented battle fronts aim to still extend their reach further.

— The high precision and radiation resistance frontiers are approaching each other. Do hybrid and monolithic sensors converge on SOI or 3D-IC devices ?


June 20th

… a final remark


June 20th

1. I. Thou shalt minimize the cost2. II. Thou shalt stick to the budget limits.

3.THANK YOU !

Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC )

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